CN105957910A - Carbon silicon heterojunction solar cell and preparation method thereof - Google Patents
Carbon silicon heterojunction solar cell and preparation method thereof Download PDFInfo
- Publication number
- CN105957910A CN105957910A CN201610286852.0A CN201610286852A CN105957910A CN 105957910 A CN105957910 A CN 105957910A CN 201610286852 A CN201610286852 A CN 201610286852A CN 105957910 A CN105957910 A CN 105957910A
- Authority
- CN
- China
- Prior art keywords
- amorphous carbon
- silicon substrate
- film layer
- carbon film
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 title abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 73
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 73
- 239000010703 silicon Substances 0.000 claims abstract description 73
- 229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 238000002161 passivation Methods 0.000 claims abstract description 34
- 230000000737 periodic effect Effects 0.000 claims abstract description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 22
- 239000000126 substance Substances 0.000 claims description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 11
- 238000004528 spin coating Methods 0.000 claims description 11
- 238000005507 spraying Methods 0.000 claims description 10
- 239000007792 gaseous phase Substances 0.000 claims description 7
- 238000007747 plating Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 238000004549 pulsed laser deposition Methods 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- 239000002210 silicon-based material Substances 0.000 claims description 4
- 238000002207 thermal evaporation Methods 0.000 claims description 4
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 2
- 238000001228 spectrum Methods 0.000 abstract description 3
- 229910002026 crystalline silica Inorganic materials 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 239000010408 film Substances 0.000 description 28
- 239000013078 crystal Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 150000001721 carbon Chemical class 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 210000001367 artery Anatomy 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a carbon silicon heterojunction solar cell and a preparation method thereof. The cell comprises a silicon substrate; a passivation layer prepared on the lower surface of the silicon substrate, covering the silicon substrate, and being a periodic opening structure; a first electrode prepared on the lower surface of the passivation layer, covering the passivation layer, and forming periodic contact with the silicon substrate through periodic opening of the passivation layer; a first amorphous carbon thin layer prepared on the upper surface of the silicon substrate, and covering the silicon substrate; a second amorphous carbon thin layer prepared on the upper surface of the first amorphous carbon thin layer and covering the first amorphous carbon thin layer; and a second electrode prepared on the upper surface of the second amorphous carbon thin layer and having the width less than the second amorphous carbon thin layer. Compared with a traditional crystalline silica cell, the cell can more effectively utilize solar spectrum, be used independently, and also form a mechanical laminated structure with a present crystalline silica cell, thereby improving crystalline silica cell efficiency, and reducing costs.
Description
Technical field
This patent relates to energy technology field, particularly relates to a kind of silicon heterogenous solaode of carbon and preparation thereof
Method
Background technology
The problems such as whole world environmental pollution in recent years, greenhouse effect are on the rise, and traditional energy reserves more come
The fewest, price is more and more higher, so the mankind are increasing to the demand of clean energy resource, and solar energy power generating
Increasingly it is subject to people's attention as a kind of clean energy resource.At present, solar photovoltaic market sold
Pond major part is monocrystal silicon and polysilicon solar cell, and the bandwidth of crystalline silicon material is 1.12eV, cuts
Only wavelength is 1107nm, therefore can not effectively utilize the infrared of solar spectral and ultraviolet band.
Summary of the invention
It is an object of the invention to provide a kind of silicon heterogenous solaode of carbon and preparation method thereof, this battery
Based on the most ripe crystal silicon cell manufacturing technology, crystalline silicon substrate is prepared the band gap that two-layer is cheap
Adjustable amorphous carbon film, constitutes PIN structural solaode, and the band gap of amorphous carbon film can be 0.2
Being modulated between 3eV, therefore compared with conventional crystal silion cell, the silicon heterogenous battery of this carbon can be more
Add and effectively utilize solar spectrum.
The technical solution used in the present invention is:
A kind of silicon heterogenous solaode of carbon, including:
Silicon substrate；
Passivation layer, it is produced on silicon substrate lower surface, covers silicon substrate, for periodicity open-celled structure；
First electrode, it is produced on passivation layer lower surface, covers passivation layer, opened by the periodicity of passivation layer
Hole forms periodic contact with silicon substrate；
First amorphous carbon film layer, it is produced on silicon substrate upper surface, covers silicon substrate；
Second amorphous carbon film layer, it is produced on the first amorphous carbon film layer upper surface, covers the first amorphous carbon
Thin layer；
Second electrode, it is produced on the second amorphous carbon film layer upper surface, and width is less than the second amorphous carbon film
Layer.
Further, wherein said silicon substrate is monocrystal silicon or polycrystalline silicon material, for p-type or n-type doping.
Further, wherein said passivation layer is Al2O3、SiO2, SiNx and Ca2O3In one or more
Combination, its thickness be less than 1000 nanometers.
Further, wherein said first amorphous carbon film layer is intrinsic doping；Described second amorphous carbon film
The doping type of layer is contrary with silicon substrate, and the bandwidth of the second amorphous carbon film layer is thin more than the first amorphous carbon
Film layer.
A kind of preparation method of the silicon heterogenous solaode of carbon, including:
Step 1: micro-nano light trapping structure is prepared on surface on a silicon substrate；
Step 2: the first amorphous carbon film layer is prepared on surface on a silicon substrate；
Step 3: prepare the second amorphous carbon film layer at the first amorphous carbon film layer upper surface；
Step 4: prepare passivation layer at silicon substrate lower surface；
Step 5: prepare the second electrode at the second amorphous carbon film layer upper surface；
Step 6: prepare the first electrode at passivation layer lower surface；
Step 7: make passivation layer make the first electrode by perforate and silicon substrate while forming periodicity open-celled structure
Form periodic contact.
Further, wherein the preparation of the micro-nano light trapping structure of step 1 use chemical solution corrosion or etc.
The method of plasma etching.
Further, wherein the first amorphous carbon film layer of step 2 and the second amorphous carbon film of step 3
The preparation of layer uses ald, chemical gaseous phase deposition, pulsed laser deposition, magnetron sputtering, spray
It is coated with or the method for spin coating, after prepared by this first, second amorphous carbon film layer, uses chemical solution to it
Carry out chemical treatment.
Further, wherein the preparation of the passivation layer of step 4 uses ald, chemical gaseous phase is sunk
Long-pending, pulsed laser deposition, magnetron sputtering, spraying or the method for spin coating.
Further, wherein the preparation of the first electrode of the preparation of the second electrode of step 5 and step 6 uses
Be electron beam evaporation, thermal evaporation, magnetron sputtering, plating, chemical plating, silk screen printing, spraying or spin coating
Method.
Further, wherein step 7 make passivation layer formed periodically open-celled structure use with pulse or
The method that continuous laser carries out cycle selectivity irradiation to the first electrode, makes the first electrode by laser irradiated portion
Then melt burn-out passivation layer cools down, so that the first electrode forms periodic contact by perforate with silicon substrate.
The invention has the beneficial effects as follows: compared with conventional crystal silion cell, this battery can significantly more efficient utilize
Solar spectrum, this battery both can be independently operated, can also be mechanical laminated with current crystal silicon cell composition
Structure, thus improve the efficiency of crystal silicon cell, reduce cost.
Accompanying drawing explanation
The structural representation of the silicon heterogenous solaode of a kind of carbon that Fig. 1 is to provide
Fig. 2 is the preparation method flow chart of the silicon heterogenous solaode of a kind of carbon provided in the embodiment of the present invention
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment,
And referring to the drawings, the present invention is described in further detail.
Fig. 1 shows the structural representation of the silicon heterogenous solaode of a kind of carbon provided in the embodiment of the present invention
Figure.As it is shown in figure 1, the silicon heterogenous solaode of this carbon includes:
One silicon substrate 1, silicon substrate is monocrystal silicon or polycrystalline silicon material, for p-type or n-type doping；
One passivation layer 2, it is produced on silicon substrate 1 lower surface, covers silicon substrate 1, for periodicity open-celled structure,
The material of this passivation layer is Al2O3、SiO2, SiNx and Ca2O3In the combination of one or more, its thickness
Less than 1000 nanometers；
One first electrode 3, it is produced on passivation layer 2 lower surface, covers passivation layer 2, by passivation layer 2
Periodically perforate and silicon substrate 1 forms periodic contact；
One first amorphous carbon film layer 4, it is produced on silicon substrate 1 upper surface, covers silicon substrate 1, mix for intrinsic
Miscellaneous；
One second amorphous carbon film layer 5, it is produced on the first amorphous carbon film layer 4 upper surface, covers first non-
Brilliant carbon thin film layer 4, doping type is contrary with silicon substrate 1, and the bandwidth of the second amorphous carbon film layer 5 is more than
First amorphous carbon film layer 4；
One second electrode 6, it is produced on the second amorphous carbon film layer 5 upper surface, and width is less than the second amorphous carbon
Thin layer 5.
Fig. 2 shows the preparation method of the silicon heterogenous solaode of a kind of carbon provided in the embodiment of the present invention,
The method includes the steps of:
Step 1: use the alkaline chemical solution corrosion such as acidity or sodium hydroxide such as nitric acid at silicon substrate 1 upper surface
Or method for etching plasma prepares micro-nano light trapping structure, the upper surface of silicon substrate 1 is made to form micron or nanometer
Random or the regular small pyramid structure of magnitude or hard wimble structure or club shaped structure or pore structure, thus subtract
Few carbon silicon heterogenous solaode upper surface reflection to incident illumination；
Step 2: silicon substrate 1 upper surface use ald, chemical gaseous phase deposition, pulsed laser deposition,
The method of magnetron sputtering, spraying or spin coating prepares the first amorphous carbon film layer 4, after prepared by this thin layer,
Use the chemical solution such as nitric acid, hydrochloric acid that it is carried out chemical treatment；
Step 3: use ald, chemical gaseous phase deposition, arteries and veins at the first amorphous carbon film layer 4 upper surface
The method of impulse light deposition, magnetron sputtering, spraying or spin coating prepares the second amorphous carbon film layer 5, this thin layer
After having prepared, use the chemical solution such as nitric acid, hydrochloric acid that it is carried out chemical treatment；
Step 4: silicon substrate 1 lower surface use ald, chemical gaseous phase deposition, pulsed laser deposition,
The method of magnetron sputtering, spraying or spin coating prepares passivation layer 2；
Step 5: second amorphous carbon film layer 5 upper surface use electron beam evaporation, thermal evaporation, magnetron sputtering,
The method of plating, chemical plating, silk screen printing, spraying or spin coating prepares the second electrode 6；
Step 6: use electron beam evaporation, thermal evaporation, magnetron sputtering at passivation layer 2 lower surface, electroplate, change
The method learning plating, silk screen printing, spraying or spin coating prepares the first electrode 3；
Step 7: with pulse or continuous laser, the first electrode is carried out cycle selectivity irradiation, make the first electrode quilt
Then laser irradiated portion melt burn-out passivation layer 2 cools down, so that passivation layer 2 forms periodically perforate knot
Structure, makes the first electrode form periodic contact by perforate and silicon substrate 1 simultaneously.
Claims (10)
1. the silicon heterogenous solaode of carbon, is characterized in that, including:
Silicon substrate；
Passivation layer, it is produced on silicon substrate lower surface, covers silicon substrate, for periodicity open-celled structure；
First electrode, it is produced on passivation layer lower surface, covers passivation layer, opened by the periodicity of passivation layer
Hole forms periodic contact with silicon substrate；
First amorphous carbon film layer, it is produced on silicon substrate upper surface, covers silicon substrate；
Second amorphous carbon film layer, it is produced on the first amorphous carbon film layer upper surface, covers the first amorphous carbon
Thin layer；
Second electrode, it is produced on the second amorphous carbon film layer upper surface, and width is less than the second amorphous carbon film
Layer.
The silicon heterogenous solaode of carbon the most according to claim 1, is characterized in that: wherein said silicon
Substrate is monocrystal silicon or polycrystalline silicon material, for p-type or n-type doping.
The silicon heterogenous solaode of carbon the most according to claim 1, is characterized in that: wherein said blunt
Change layer is Al2O3、SiO2, SiNx and Ca2O3In the combination of one or more, its thickness be less than 1000
Nanometer.
The silicon heterogenous solaode of carbon the most according to claim 1, is characterized in that: wherein said
One amorphous carbon film layer is intrinsic doping；The doping type of described second amorphous carbon film layer is contrary with silicon substrate,
The bandwidth of the second amorphous carbon film layer is more than the first amorphous carbon film layer.
5. a preparation method for the silicon heterogenous solaode of carbon, is characterized in that, including:
Step 1: micro-nano light trapping structure is prepared on surface on a silicon substrate；
Step 2: the first amorphous carbon film layer is prepared on surface on a silicon substrate；
Step 3: prepare the second amorphous carbon film layer at the first amorphous carbon film layer upper surface；
Step 4: prepare passivation layer at silicon substrate lower surface；
Step 5: prepare the second electrode at the second amorphous carbon film layer upper surface；
Step 6: prepare the first electrode at passivation layer lower surface；
Step 7: make passivation layer make the first electrode by perforate and silicon substrate while forming periodicity open-celled structure
Form periodic contact.
The preparation method of the silicon heterogenous solaode of carbon the most according to claim 5, is characterized in that:
Wherein the preparation of the micro-nano light trapping structure of step 1 uses chemical solution corrosion or the side of plasma etching
Method.
The preparation method of the silicon heterogenous solaode of carbon the most according to claim 5, is characterized in that:
Wherein the preparation of the second amorphous carbon film layer of the first amorphous carbon film layer of step 2 and step 3 uses
It is ald, chemical gaseous phase deposition, pulsed laser deposition, magnetron sputtering, spraying or the method for spin coating,
After prepared by this first, second amorphous carbon film layer, use chemical solution that it is carried out chemical treatment.
The preparation method of the silicon heterogenous solaode of carbon the most according to claim 5, is characterized in that:
Wherein the preparation of the passivation layer of step 4 uses ald, chemical gaseous phase deposits, pulse laser sinks
Long-pending, magnetron sputtering, spraying or the method for spin coating.
The preparation method of the silicon heterogenous solaode of carbon the most according to claim 5, is characterized in that:
Wherein the preparation of the first electrode of the preparation of the second electrode of step 5 and step 6 use electron beam evaporation,
The method of thermal evaporation, magnetron sputtering, plating, chemical plating, silk screen printing, spraying or spin coating.
The preparation method of the silicon heterogenous solaode of carbon the most according to claim 5, is characterized in that:
Wherein step 7 make passivation layer form periodically open-celled structure to use with pulse or continuous laser first
Electrode carries out the method for cycle selectivity irradiation, makes the first electrode by laser irradiated portion melt burn-out passivation layer
Then cool down, so that the first electrode forms periodic contact by perforate with silicon substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610286852.0A CN105957910A (en) | 2016-05-03 | 2016-05-03 | Carbon silicon heterojunction solar cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610286852.0A CN105957910A (en) | 2016-05-03 | 2016-05-03 | Carbon silicon heterojunction solar cell and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105957910A true CN105957910A (en) | 2016-09-21 |
Family
ID=56913668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610286852.0A Pending CN105957910A (en) | 2016-05-03 | 2016-05-03 | Carbon silicon heterojunction solar cell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105957910A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107516691A (en) * | 2017-07-12 | 2017-12-26 | 三峡大学 | A kind of amorphous carbon film/monocrystalline silicon heterojunction solar cell and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0234975A (en) * | 1988-07-25 | 1990-02-05 | Shimadzu Corp | Photovoltaic element |
| JPH09148594A (en) * | 1995-11-27 | 1997-06-06 | Sanyo Electric Co Ltd | Photovoltaic element and its manufacture |
| US20080245415A1 (en) * | 2007-04-09 | 2008-10-09 | Hwa Nyeon Kim | Photoelectric conversion device and fabrication method thereof |
| US20090050202A1 (en) * | 2007-08-24 | 2009-02-26 | Industrial Technology Research Institute | Solar cell and method for forming the same |
| CN101447528A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Method for preparing antapex contact crystalline silicon solar cell by utilizing passivation on double surfaces and laser dotting |
-
2016
- 2016-05-03 CN CN201610286852.0A patent/CN105957910A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0234975A (en) * | 1988-07-25 | 1990-02-05 | Shimadzu Corp | Photovoltaic element |
| JPH09148594A (en) * | 1995-11-27 | 1997-06-06 | Sanyo Electric Co Ltd | Photovoltaic element and its manufacture |
| US20080245415A1 (en) * | 2007-04-09 | 2008-10-09 | Hwa Nyeon Kim | Photoelectric conversion device and fabrication method thereof |
| US20090050202A1 (en) * | 2007-08-24 | 2009-02-26 | Industrial Technology Research Institute | Solar cell and method for forming the same |
| CN101447528A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Method for preparing antapex contact crystalline silicon solar cell by utilizing passivation on double surfaces and laser dotting |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107516691A (en) * | 2017-07-12 | 2017-12-26 | 三峡大学 | A kind of amorphous carbon film/monocrystalline silicon heterojunction solar cell and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9202954B2 (en) | Nanostructure and photovoltaic cell implementing same | |
| KR101948206B1 (en) | thin film type solar cell and the fabrication method thereof | |
| CN102709402B (en) | Thin film solar cell of graphic based metal substrate and preparation method thereof | |
| CN102623517B (en) | Back contact type crystalline silicon solar cell and production method thereof | |
| CN102738304B (en) | Method for manufacturing back electrode of crystalline silicon solar cell by using local aluminum back surface field structure | |
| TW201017911A (en) | Method of manufacturing back electrode of silicon bulk solar cell | |
| KR20160090287A (en) | Nanostructured silicon based solar cells and methods to produce nanostructured silicon based solar cells | |
| CN102403369A (en) | Passivation dielectric film for solar cell | |
| CN102254963A (en) | Graphene/silicon pillar array Schottky junction photovoltaic cell and manufacturing method thereof | |
| KR20100131203A (en) | Method of preparing electrode of solar cell and solar cell using the said method | |
| US20180122963A1 (en) | Method of patterning an amorphous semiconductor layer | |
| CN101533875A (en) | Preparation method of back-contact electrode structure of crystal silicon solar cell | |
| US20130037099A1 (en) | Device for generating solar power and method for manufacturing same | |
| CN109585600A (en) | A kind of production method of the efficient crystal silicon solar batteries of two-sided PERC | |
| CN102364691A (en) | Crystalline silicon solar battery with upper/lower conversion luminescent structure and manufacturing method for crystalline silicon solar battery | |
| WO2015122096A1 (en) | Photoelectric conversion apparatus | |
| CN103258909A (en) | Method of manufacturing thin film cell and thin film cell | |
| CN206040656U (en) | A micron composite construction solar battery is received to monocrystalline silicon | |
| CN107342331B (en) | A kind of production technology of T-type top electrode back reflection thin film solar cell | |
| CN105957910A (en) | Carbon silicon heterojunction solar cell and preparation method thereof | |
| KR20100115193A (en) | Method of fabricating the same | |
| CN103924306B (en) | A kind of etching method of silicon heterojunction solar battery | |
| CN110021681A (en) | The chemical polishing of solar cell surface and resulting structure | |
| CN104485367A (en) | Micro-nano structure capable of improving properties of HIT solar cells and preparation method of micro-nano structure | |
| TWI435462B (en) | Manufacturing method for multi-color crayoned solar cells |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160921 |