CN105936748A - Modified silica gel thermal conductive optically-focusing membrane for encapsulating chips of LED plant growth lamps - Google Patents
Modified silica gel thermal conductive optically-focusing membrane for encapsulating chips of LED plant growth lamps Download PDFInfo
- Publication number
- CN105936748A CN105936748A CN201610452093.0A CN201610452093A CN105936748A CN 105936748 A CN105936748 A CN 105936748A CN 201610452093 A CN201610452093 A CN 201610452093A CN 105936748 A CN105936748 A CN 105936748A
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- Prior art keywords
- modified silica
- membrane
- silica gel
- thermal conductive
- plant growth
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2383/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
- C08J2383/04—Polysiloxanes
- C08J2383/07—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2483/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
- C08J2483/04—Polysiloxanes
- C08J2483/05—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/011—Nanostructured additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/16—Applications used for films
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
- C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
Abstract
The invention discloses a modified silica gel thermal conductive optically-focusing membrane for encapsulating chips of LED plant growth lamps. The silica gel is modified by nano zinc sulfide and aluminum isopropoxide, wherein nano zinc sulfide should be processed by a silane coupling agent at first to improve the dispersibility of nano zinc sulfide in silica gel. Aluminum isopropoxide sol is used to replace conventional inorganic filling materials, the dispersing and combining performance is better, the thermal conductive performance of the membrane is effectively improved, the composite encapsulation membrane can be cured at a room temperature, has a good thermal conductive performance and an excellent light-transmitting and light-focusing optical performance, the luminous efficiency and effective radiation rate of LED lamps are greatly improved, the chip or a fluorescence powder layer can be directly covered by the membrane, and the membrane can cure at a room temperature.
Description
Technical field
The present invention relates to LED packaging plastic technical field, particularly relate to a kind of modified silica-gel heat conduction condensing film being applied to LED plant growth lamp chip package.
Background technology
In growing process, illumination is a vital factor, and in planting process, because the change of natural conditions, especially in late fall and winter, the optical illumination of plant is inadequate, and now indoor additional illumination is just particularly important.LED light source is the artificial light source ideal at agriculture field emerged in recent years, and than conventional light source, LED light source energy-conserving and environment-protective, spectrum is pure, the wave-length coverage of laminating plant growing, has huge market demand.
Mostly LED plant growth lamp is to be combined by some equally distributed single lamps, wherein single lamp is to be formed by the encapsulation of several luminescence chips, production process is generally die bond, bonding wire, embedding, cuts, tests, packs these flow processs, wherein the performance of casting glue will directly influence light extraction efficiency and the service life of chip, at present to be mainly luminous efficiency low for LED plant lamp problem present in the application process, light dispersion is high, and powerful chip package exists the problems such as poor radiation, service life is short.
Summary of the invention
The object of the invention is contemplated to make up the defect of prior art, it is provided that a kind of modified silica-gel heat conduction condensing film being applied to LED plant growth lamp chip package.
The present invention is achieved by the following technical solutions:
A kind of modified silica-gel heat conduction condensing film being applied to LED plant growth lamp chip package, described modified silica-gel heat conduction condensing film is prepared by the raw material of following weight portion: Vinyl MQ silicon resin 30-40, vinyl silicone oil 20-40, containing hydrogen silicone oil 3-5, silane coupler 0.4-0.5, nano-zinc sulfide 1-2, Karst platinum catalyst 0.1, aluminum isopropylate. 0.4-0.5, butyl glycidyl ether 5-10.
Described modified silica-gel heat conduction condensing film is prepared by following steps:
(1) by standby with silane coupler mixed grinding dispersion 20-30min for nano-zinc sulfide；
(2) aluminum isopropylate. is put in butyl glycidyl ether, closed ultrasonic stirring mixing 3-5h, to make vitreosol, put into material prepared by step (1) subsequently, continue ultrasonic disperse 2-3h, gained material is standby；
(3) will drip material prepared by step (2) after other leftover materials mix and blend mix homogeneously, dropping limit, limit is stirred, and after dropping, mixed material is coated on chip or fluorescence coating after filtration, vacuum defoamation, i.e. completes encapsulation after it is completely dried.
Silica gel packaging film prepared by the present invention utilizes nano-zinc sulfide, silica gel is modified processing by aluminum isopropylate., wherein nano-zinc sulfide first passes through silane coupler process, improve its dispersibility in silica gel, traditional heat conduction inorganic filler is replaced with aluminum isopropylate. colloidal sol, dispersion associativity is more preferably, effectively raise the heat conductivility of material, finally prepare the composite package film that room temperature is the most curable, it has thermal conductive resin and the optical property of printing opacity optically focused, drastically increase the light extraction efficiency of LED and effective exposure rate, directly it is coated onto during use solidifying on chip or phosphor powder layer.
Detailed description of the invention
The modified silica-gel heat conduction condensing film of the present embodiment is prepared by the raw material of following weight portion: Vinyl MQ silicon resin 30, vinyl silicone oil 20, containing hydrogen silicone oil 3, silane coupler 0.4, nano-zinc sulfide 1, Karst platinum catalyst 0.1, aluminum isopropylate. 0.4, butyl glycidyl ether 5.
This modified silica-gel heat conduction condensing film is prepared by following steps:
(1) by standby with silane coupler mixed grinding dispersion 20min for nano-zinc sulfide；
(2) aluminum isopropylate. is put in butyl glycidyl ether, closed ultrasonic stirring mixing 3h, to make vitreosol, put into material prepared by step (1) subsequently, continue ultrasonic disperse 2h, gained material is standby；
(3) will drip material prepared by step (2) after other leftover materials mix and blend mix homogeneously, dropping limit, limit is stirred, and after dropping, mixed material is coated on chip or fluorescence coating after filtration, vacuum defoamation, i.e. completes encapsulation after it is completely dried.
Properties of product test result is as follows:
Hot strength: 52.4MPa；Water absorption rate %(25 DEG C): 0.45；Refractive index: 1.572；Light transmittance: 90.2%；Thermal conductivity: 0.95W/ (m.k).
Claims (2)
1. the modified silica-gel heat conduction condensing film being applied to LED plant growth lamp chip package, it is characterized in that, described modified silica-gel heat conduction condensing film is prepared by the raw material of following weight portion: Vinyl MQ silicon resin 30-40, vinyl silicone oil 20-40, containing hydrogen silicone oil 3-5, silane coupler 0.4-0.5, nano-zinc sulfide 1-2, Karst platinum catalyst 0.1, aluminum isopropylate. 0.4-0.5, butyl glycidyl ether 5-10.
A kind of modified silica-gel heat conduction condensing film being applied to LED plant growth lamp chip package, it is characterised in that described modified silica-gel heat conduction condensing film is prepared by following steps:
(1) by standby with silane coupler mixed grinding dispersion 20-30min for nano-zinc sulfide；
(2) aluminum isopropylate. is put in butyl glycidyl ether, closed ultrasonic stirring mixing 3-5h, to make vitreosol, put into material prepared by step (1) subsequently, continue ultrasonic disperse 2-3h, gained material is standby；
(3) will drip material prepared by step (2) after other leftover materials mix and blend mix homogeneously, dropping limit, limit is stirred, and after dropping, mixed material is coated on chip or fluorescence coating after filtration, vacuum defoamation, i.e. completes encapsulation after it is completely dried.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610452093.0A CN105936748A (en) | 2016-06-21 | 2016-06-21 | Modified silica gel thermal conductive optically-focusing membrane for encapsulating chips of LED plant growth lamps |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610452093.0A CN105936748A (en) | 2016-06-21 | 2016-06-21 | Modified silica gel thermal conductive optically-focusing membrane for encapsulating chips of LED plant growth lamps |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105936748A true CN105936748A (en) | 2016-09-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610452093.0A Withdrawn CN105936748A (en) | 2016-06-21 | 2016-06-21 | Modified silica gel thermal conductive optically-focusing membrane for encapsulating chips of LED plant growth lamps |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104130742A (en) * | 2014-06-29 | 2014-11-05 | 惠州市永卓科技有限公司 | COB (chip on board)-LED (light-emitting diode) organosilicone encapsulation glue and preparation method thereof |
| CN104130741A (en) * | 2014-06-29 | 2014-11-05 | 惠州市永卓科技有限公司 | Transparent organosilicone glue for COB (chip on board)-LED (light-emitting diode) encapsulation and preparation method thereof |
| CN105086468A (en) * | 2015-08-16 | 2015-11-25 | 江龙 | Nanometer-sized zinc sulfide mixed high-performance organic silicon resin-polymethyl methacrylate composite for LED packaging and preparation method thereof |
-
2016
- 2016-06-21 CN CN201610452093.0A patent/CN105936748A/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104130742A (en) * | 2014-06-29 | 2014-11-05 | 惠州市永卓科技有限公司 | COB (chip on board)-LED (light-emitting diode) organosilicone encapsulation glue and preparation method thereof |
| CN104130741A (en) * | 2014-06-29 | 2014-11-05 | 惠州市永卓科技有限公司 | Transparent organosilicone glue for COB (chip on board)-LED (light-emitting diode) encapsulation and preparation method thereof |
| CN105086468A (en) * | 2015-08-16 | 2015-11-25 | 江龙 | Nanometer-sized zinc sulfide mixed high-performance organic silicon resin-polymethyl methacrylate composite for LED packaging and preparation method thereof |
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Application publication date: 20160914 |
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