CN105935842B - 器件芯片的制造方法 - Google Patents

器件芯片的制造方法 Download PDF

Info

Publication number: CN105935842B
Authority: CN; China
Prior art keywords: modification layer; chip; device wafer; modification; wafer
Prior art date: 2015-03-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

CN201610110135.2A

Other languages

English (en)

Chinese (zh)

Other versions

CN105935842A (zh

Inventor

田中圭

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Disco Corp

Original Assignee

Disco Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2015-03-05

Filing date

2016-02-29

Publication date

2019-08-16

2016-02-29 Application filed by Disco Corp filed Critical Disco Corp

2016-09-14 Publication of CN105935842A publication Critical patent/CN105935842A/zh

2019-08-16 Application granted granted Critical

2019-08-16 Publication of CN105935842B publication Critical patent/CN105935842B/zh

Status Active legal-status Critical Current

2036-02-29 Anticipated expiration legal-status Critical

Links

238000004519 manufacturing process Methods 0.000 title claims abstract description 17
230000004048 modification Effects 0.000 claims abstract description 66
238000012986 modification Methods 0.000 claims abstract description 66
230000011218 segmentation Effects 0.000 claims abstract description 41
230000035699 permeability Effects 0.000 claims abstract description 4
238000005286 illumination Methods 0.000 claims abstract description 3
230000015572 biosynthetic process Effects 0.000 claims description 3
235000012431 wafers Nutrition 0.000 description 38
125000004122 cyclic group Chemical group 0.000 description 10
239000004065 semiconductor Substances 0.000 description 10
238000000034 method Methods 0.000 description 6
238000005520 cutting process Methods 0.000 description 4
230000003287 optical effect Effects 0.000 description 3
239000000853 adhesive Substances 0.000 description 2
230000001070 adhesive effect Effects 0.000 description 2
230000002093 peripheral effect Effects 0.000 description 2
229910002601 GaN Inorganic materials 0.000 description 1
JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
229910017502 Nd:YVO4 Inorganic materials 0.000 description 1
208000037656 Respiratory Sounds Diseases 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
230000007547 defect Effects 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000009434 installation Methods 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
238000003672 processing method Methods 0.000 description 1
230000000644 propagated effect Effects 0.000 description 1
230000009467 reduction Effects 0.000 description 1
229910052594 sapphire Inorganic materials 0.000 description 1
239000010980 sapphire Substances 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
239000007787 solid Substances 0.000 description 1
239000000758 substrate Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Dicing (AREA)
High Energy & Nuclear Physics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Health & Medical Sciences (AREA)
Toxicology (AREA)
Laser Beam Processing (AREA)

CN201610110135.2A 2015-03-05 2016-02-29 器件芯片的制造方法 Active CN105935842B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2015-043601		2015-03-05
JP2015043601A JP6494334B2 (ja)	2015-03-05	2015-03-05	デバイスチップの製造方法

Publications (2)

Publication Number	Publication Date
CN105935842A CN105935842A (zh)	2016-09-14
CN105935842B true CN105935842B (zh)	2019-08-16

Family

ID=56847355

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CN201610110135.2A Active CN105935842B (zh)	2015-03-05	2016-02-29	器件芯片的制造方法

Country Status (4)

Country	Link
JP (1)	JP6494334B2 (ja)
KR (1)	KR102379114B1 (ja)
CN (1)	CN105935842B (ja)
TW (1)	TWI700735B (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP6745165B2 (ja) *	2016-08-09	2020-08-26	株式会社ディスコ	ウェーハの加工方法
CN106328778B (zh) *	2016-09-14	2019-03-08	中国科学院半导体研究所	隐形切割制备正、倒和倒梯形台状衬底的led芯片的方法
DE102016224978B4 (de) *	2016-12-14	2022-12-29	Disco Corporation	Substratbearbeitungsverfahren
DE102017200631B4 (de) *	2017-01-17	2022-12-29	Disco Corporation	Verfahren zum Bearbeiten eines Substrats
JP6821261B2 (ja) *	2017-04-21	2021-01-27	株式会社ディスコ	被加工物の加工方法
JP7007052B2 (ja) *	2017-09-19	2022-01-24	株式会社ディスコ	ウェーハの加工方法
JP7148816B2 (ja) *	2019-09-30	2022-10-06	日亜化学工業株式会社	発光素子の製造方法

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JP2006245043A (ja) *	2005-02-28	2006-09-14	Toyoda Gosei Co Ltd	Ｉｉｉ族窒化物系化合物半導体素子の製造方法及び発光素子
CN101807647A (zh) *	2010-03-19	2010-08-18	厦门市三安光电科技有限公司	具有倾斜侧面的铝镓铟磷系发光二极管的制作工艺
JP2013089714A (ja) *	2011-10-17	2013-05-13	Disco Abrasive Syst Ltd	チップ形成方法
CN103545409A (zh) *	2012-07-11	2014-01-29	株式会社迪思科	光器件以及光器件的加工方法

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JP4408361B2 (ja) *	2003-09-26	2010-02-03	株式会社ディスコ	ウエーハの分割方法
JP4385746B2 (ja)	2003-11-28	2009-12-16	三菱化学株式会社	窒化物系半導体素子の製造方法
JP2007273743A (ja)	2006-03-31	2007-10-18	Kyocera Corp	半導体基板のダイシング方法及び半導体基板
JP2009124077A (ja) *	2007-11-19	2009-06-04	Denso Corp	半導体チップ及びその製造方法
JP2010073821A (ja)	2008-09-17	2010-04-02	Disco Abrasive Syst Ltd	ウェーハ分割方法
EP2402984B1 (en) *	2009-02-25	2018-01-10	Nichia Corporation	Method of manufacturing a semiconductor element, and corresponding semicondutor element
JP5446325B2 (ja) *	2009-03-03	2014-03-19	豊田合成株式会社	レーザ加工方法および化合物半導体発光素子の製造方法
JP5361916B2 (ja)	2011-02-04	2013-12-04	三星ダイヤモンド工業株式会社	レーザスクライブ方法
TW201301557A (zh) *	2011-06-17	2013-01-01	Univ Nat Cheng Kung	發光元件結構及其製造方法

2015
- 2015-03-05 JP JP2015043601A patent/JP6494334B2/ja active Active
2016
- 2016-02-02 TW TW105103299A patent/TWI700735B/zh active
- 2016-02-29 CN CN201610110135.2A patent/CN105935842B/zh active Active
- 2016-03-02 KR KR1020160025128A patent/KR102379114B1/ko active IP Right Grant

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2006245043A (ja) *	2005-02-28	2006-09-14	Toyoda Gosei Co Ltd	Ｉｉｉ族窒化物系化合物半導体素子の製造方法及び発光素子
CN101807647A (zh) *	2010-03-19	2010-08-18	厦门市三安光电科技有限公司	具有倾斜侧面的铝镓铟磷系发光二极管的制作工艺
JP2013089714A (ja) *	2011-10-17	2013-05-13	Disco Abrasive Syst Ltd	チップ形成方法
CN103545409A (zh) *	2012-07-11	2014-01-29	株式会社迪思科	光器件以及光器件的加工方法

Also Published As

Publication number	Publication date
TW201709290A (zh)	2017-03-01
JP2016163016A (ja)	2016-09-05
KR102379114B1 (ko)	2022-03-25
TWI700735B (zh)	2020-08-01
KR20160108183A (ko)	2016-09-19
JP6494334B2 (ja)	2019-04-03
CN105935842A (zh)	2016-09-14

Legal Events

Date	Code	Title
2016-09-14	C06	Publication
2016-09-14	PB01	Publication
2018-03-06	SE01	Entry into force of request for substantive examination
2018-03-06	SE01	Entry into force of request for substantive examination
2019-08-16	GR01	Patent grant
2019-08-16	GR01	Patent grant

Publication	Publication Date	Title
CN105935842B (zh)	2019-08-16	器件芯片的制造方法
CN103545238B (zh)	2017-08-11	带扩张装置
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CN105665946B (zh)	2019-08-16	晶片的生成方法
CN102891231B (zh)	2017-05-17	发光元件的制造方法
US7759223B2 (en)	2010-07-20	Semiconductor wafer and manufacturing process for semiconductor device
US9018080B2 (en)	2015-04-28	Wafer processing method
CN107464762A (zh)	2017-12-12	被加工物的检查方法、检查装置、激光加工装置、扩展装置
US20190273009A1 (en)	2019-09-05	Device transferring method
CN102388436A (zh)	2012-03-21	发光二极管的制造设备与方法
JP2011166002A (ja)	2011-08-25	ウエーハの加工方法
CN107591361A (zh)	2018-01-16	半导体器件芯片的制造方法
TWI701730B (zh)	2020-08-11	晶圓之加工方法
CN108630601A (zh)	2018-10-09	半导体装置的制造方法
TW201320203A (zh)	2013-05-16	藉使用開槽基板以達成之低彎曲晶圓接合
US20060073676A1 (en)	2006-04-06	Pre-process before cutting a wafer and method of cutting a wafer
JP2010098116A (ja)	2010-04-30	分割方法
JP7082502B2 (ja)	2022-06-08	ウェーハの加工方法
KR20200010042A (ko)	2020-01-30	Led 웨이퍼의 가공 방법
JP2015103674A (ja)	2015-06-04	Ｉｉｉ族窒化物半導体発光素子の製造方法
CN108735593A (zh)	2018-11-02	晶片的加工方法
JP6301658B2 (ja)	2018-03-28	ウェーハの加工方法
JP2015207724A (ja)	2015-11-19	ウェーハの加工方法
US9391233B2 (en)	2016-07-12	Method for manufacturing light emitting device package
JP2014082317A (ja)	2014-05-08	ウエーハの加工方法