CN105932974A - Programmable amplifier circuit having pseudo resistor failure detection function - Google Patents

Programmable amplifier circuit having pseudo resistor failure detection function Download PDF

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Publication number
CN105932974A
CN105932974A CN201610259160.7A CN201610259160A CN105932974A CN 105932974 A CN105932974 A CN 105932974A CN 201610259160 A CN201610259160 A CN 201610259160A CN 105932974 A CN105932974 A CN 105932974A
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CN
China
Prior art keywords
pseudo
resistance
programmable amplifier
circuit
voltage
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Pending
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CN201610259160.7A
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Chinese (zh)
Inventor
秦亚杰
董晨洁
张煜彬
汪源源
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Fudan University
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Fudan University
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Priority to CN201610259160.7A priority Critical patent/CN105932974A/en
Publication of CN105932974A publication Critical patent/CN105932974A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G3/00Gain control in amplifiers or frequency changers
    • H03G3/20Automatic control
    • H03G3/30Automatic control in amplifiers having semiconductor devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3211Modifications of amplifiers to reduce non-linear distortion in differential amplifiers

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

The invention belongs to the technical field of integrated circuits, and particularly provides a programmable amplifier circuit having a pseudo resistor failure detection function. The programmable amplifier circuit comprises a programmable amplifier and a pseudo resistor failure detection circuit. Voltage of the two ends of a pseudo resistor is monitored through the pseudo resistor failure detection circuit so as to prevent voltage of the two ends of the pseudo resistor from exceeding the preset voltage threshold range and then avoid pseudo resistor failure. The adopted pseudo resistor structure and a pseudo resistor bias circuit are suitable for the N-well technology and can reduce the influence of the technology and temperature change on the resistance value of the pseudo resistor. With application of the method, nonlinear distortion and cut-off frequency drift of the programmable amplifier circuit can be effectively reduced; besides, the pseudo resistor bias circuit can adjust the resistance value of the pseudo resistor so as to adjust bandwidth of the programmable amplifier circuit.

Description

Programmable amplifier circuit with pseudo-resistance failure detection function
Technical field
The invention belongs to technical field of integrated circuits, be specifically related to the amplification able to programme with pseudo-resistance failure detection function Device circuit.
Background technology
In recent years, integrated circuit technique gets more and more in the application of biomedical engineering field, cures in particular for biology Learn the detection of signal.During biomedical signals measuring, owing to electricity physiological signal has the cut-off frequency of as little as mHz, In view of constraintss such as areas, feedback capacity can not be excessive, thus feedback resistance resistance must reach, generally use Pseudo-resistance realizes big resistance.But, the factor such as pseudo-resistance and flow-route and temperature is relevant.Except by factors such as flow-route and temperatures Impact, it is often more important that, pseudo-resistance is also affected by its both end voltage, when pseudo-resistance both end voltage is beyond certain threshold During value, now the resistance of pseudo-resistance will occur large change so that losing efficacy.This not only can make the cut-off frequency of amplifying circuit occur Bigger drift, also can introduce bigger non-linear distortion, makes amplifying circuit cannot meet system application requirement.It has been reported that In ISSCCC 2016 meeting paper, pseudo-resistance and biasing circuit thereof that V. Viswam et al. is used can be effectively reduced technique Fluctuation and the impact of temperature variation factors, its mode is applicable to twin well process, but is not particularly suited for N-well process.
Summary of the invention
It is desirable to provide a kind of programmable amplifier circuit with pseudo-resistance failure detection function, and it is automatically adjusted Circuit parameter forms closed loop control, effectively prevents pseudo-resistance failure, to reduce non-linear distortion and the cutoff frequency of amplifier circuit Rate is drifted about, and meets the needs of the actual application of system.
The programmable amplifier circuit with pseudo-resistance failure detection function that the present invention provides, including: amplification able to programme Device, pseudo-resistance failure testing circuit.Wherein, the outfan of programmable amplifier connects with the input of pseudo-resistance failure testing circuit Connect;The pseudo-outfan of resistance failure testing circuit is connected with the gain control end of programmable amplifier.
In the present invention, described pseudo-resistance failure testing circuit is made up of two comparators and a Logic control module, Its input signal is the output signal of programmable amplifier, i.e. pseudo-resistance both end voltage;Once input signal exceeds any one The voltage threshold that comparator is preset, Logic control module will send the corresponding gain control signal gain control to programmable amplifier End processed, regulates programmable amplifier gain, until output voltage meets the voltage threshold requirement that pseudo-resistance is preset;Described pseudo-electricity Resistance failure detection circuit only need to individually detect an outfan of programmable amplifier, is applicable not only to full-differential circuits, it is possible to Extend and be applied to Single-end output circuit.
In the present invention, described programmable amplifier includes operational amplifier, two pseudo-resistance, two feedback capacities and two Individual input capacitance is to form full-differential circuits, and wherein, pseudo-resistance realizes direct current biasing and bandwidth is adjustable, feedback capacity and input electricity Hold the gain determining programmable amplifier, change input capacitance adjustable gain.
In the present invention, described pseudo-resistance uses the mode that lining-leakage connects, shown in Figure 2.Its source-drain current is with drain electrode The change of voltage and change;Use two PMOS series systems, it is adaptable to N-well process and its both end voltage are in quiescent point Neighbouring by Symmetrical change, symmetry is also changed, thus reduces non-linear distortion by pseudo-resistance;PMOS uses thick grid Pipe, reduces the impact of leakage current;Pseudo-resistance uses single biasing circuit.
In the present invention, described pseudo-resistance biasing circuit is made up of, equally three PMOS and two programmable current sources It is applicable to N-well process;Shown in Figure 3.Two outfans of biasing circuit are connected respectively to grid and the source electrode of pseudo-resistance, its Difference in voltage is using the gate source voltage as pseudo-two PMOS of resistance;In this biasing circuit, mutual of two of which PMOS Joining, the 3rd PMOS then two PMOS with pseudo-resistance are mated;Programmable current source can be used for changing pseudo-resistance, And then regulation programmable amplifier circuit bandwidth.
The present invention is had the beneficial effect that
1, used pseudo-resistance failure testing circuit can carry out detection to pseudo-resistance both end voltage and forms closed loop control, used Pseudo-electric resistance structure and pseudo-resistance biasing circuit be applicable to N-well process and technique and the temperature shadow to pseudo-resistance can be reduced Ring, take above-mentioned measure, pseudo-resistance failure can be prevented, it is achieved less non-linear distortion and cut-off frequency drift;
2, the programmable current source in pseudo-resistance biasing circuit can be used for changing pseudo-resistance, it is achieved programmable amplifier circuit BREATHABLE BANDWIDTH.
Accompanying drawing explanation
Fig. 1 is the theory diagram of the present invention.
Fig. 2 is the implementation of the pseudo-resistance of the present invention.
Fig. 3 is the implementation of the pseudo-resistance biasing circuit of the present invention.
Detailed description of the invention
Below in conjunction with accompanying drawing, the enforcement of the present invention is made as detailed below:
In FIG, the programmable amplifier circuit with pseudo-resistance failure detection function includes: programmable amplifier 1, pseudo-resistance Failure detection circuit 2.Wherein, the outfan of programmable amplifier 1 is connected with the input of pseudo-resistance failure testing circuit 2;Pseudo- The outfan of resistance failure testing circuit 2 is connected with the gain control end of programmable amplifier 1.
In FIG, described pseudo-resistance failure testing circuit is by two comparator C1、C2With a Logic control module 3 groups Become;Its input signal is output signal V of programmable amplifierop(the symmetry in view of differential configuration, it is possible to detection Von), I.e. pseudo-resistance RfBoth end voltage;The output voltage V of programmable amplifieropWith VonAbout its output common mode voltage VcmSymmetry, thus Predetermined voltage threshold V of comparatorHAnd VLIt is respectively Vcm+VTAnd Vcm-VT;Work as Vop>Vcm+VT, comparator C1Output control signal is given Logic control module 3, works as Vop<Vcm-VTTime, comparator C2Output control signal is to Logic control module 3, Logic control module 3 The corresponding gain control signal gain control end to programmable amplifier will be sent, by regulating the input of programmable amplifier Electric capacity changes the gain of programmable amplifier, until output voltage meets the threshold voltage requirements of pseudo-resistance;Described pseudo-resistance 2 need of failure detection circuit individually detect an outfan of programmable amplifier, are applicable not only to full-differential circuits, it is possible to prolong Stretch and be applied to Single-end output circuit.
In FIG, described programmable amplifier includes operational amplifier A, two pseudo-resistance Rf, two feedback capacities Cfb With two input capacitances Cin, wherein, pseudo-resistance RfRealize direct current biasing and bandwidth is adjustable, feedback capacity CfbWith input capacitance Cin Determine the gain of programmable amplifier, change input capacitance CinAdjustable gain.
In fig. 2, described pseudo-resistance uses the mode that lining-leakage connects, and its source-drain current is by the change with drain voltage And change, thus realize big resistance;Use two PMOS Mp1、Mp2Series system, Mp1Source electrode and Mp2Source electrode connect, Mp1 Grid and Mp2Grid connect, it is adaptable to N-well process and its both end voltage near quiescent point by Symmetrical change, Symmetry is also changed by pseudo-resistance, thus reduces non-linear distortion;PMOS Mp1、Mp2Use thick bank tube, reduce leakage current Impact;Pseudo-resistance uses single biasing circuit.
In figure 3, described pseudo-resistance biasing circuit is by three PMOS M1、M2、M3With two programmable current sources Ibias、IadjComposition, is equally applicable to N-well process;Wherein M1Grounded drain, M1Source electrode and M2Source electrode connect and with can compile Journey current source IbiasIt is connected, M2Drain electrode and M3Source electrode connect, M3Drain electrode and programmable current source IadjConnect, electricity able to programme Stream source IadjGround connection, M2、M3Drain electrode be all connected with its grid, M1、M2、M3Source-leakage is all used to connect mode;The two of biasing circuit Individual outfan M3Drain voltage VgAnd M1Drain voltage VsThe grid and the source electrode that are respectively pseudo-resistance provide bias voltage, its Difference in voltage is using the gate source voltage as pseudo-two PMOS of resistance;In this biasing circuit, PMOS M1And M2Coupling, PMOS Pipe M3With pseudo-resistance PMOS Mp1And Mp2Coupling, thus reduce the change with flow-route and temperature of the pseudo-resistance;Programmable current Source IbiasAnd IadjFor changing pseudo-resistance, it is achieved programmable amplifier circuit BREATHABLE BANDWIDTH.

Claims (5)

1. the programmable amplifier circuit with pseudo-resistance failure detection, it is characterised in that: include programmable amplifier, puppet Resistance failure testing circuit;Wherein, the outfan of programmable amplifier is connected with the input of pseudo-resistance failure testing circuit;Pseudo- The outfan of resistance failure testing circuit is connected with the gain control end of programmable amplifier.
Programmable amplifier circuit with pseudo-resistance failure detection the most according to claim 1, it is characterised in that: described Pseudo-resistance failure testing circuit be made up of two comparators and a Logic control module, its input signal is amplification able to programme The output signal of device, i.e. pseudo-resistance both end voltage;The voltage threshold that once input signal is preset beyond any one comparator, patrols Volume control module sends corresponding gain control signal to the gain control end of programmable amplifier, and regulation programmable amplifier increases Benefit, until output voltage meets the voltage threshold requirement that pseudo-resistance is preset;Described pseudo-resistance failure testing circuit only needs individually One outfan of detection programmable amplifier.
Programmable amplifier circuit with pseudo-resistance failure detection the most according to claim 1, it is characterised in that: described Programmable amplifier include that operational amplifier, two pseudo-resistance, two feedback capacities and two input capacitances are the poorest with composition Parallel circuit, wherein, pseudo-resistance realizes direct current biasing and bandwidth is adjustable, and feedback capacity and input capacitance determine programmable amplifier Gain, changes input capacitance adjustable gain.
Programmable amplifier circuit with pseudo-resistance failure detection the most according to claim 3, it is characterised in that: described Pseudo-resistance use lining-mode of connecting of leakage, its source-drain current changes with the change of drain voltage;Use two PMOS strings Connection mode, it is adaptable to Symmetrical is changed near quiescent point by N-well process and its both end voltage, pseudo-resistance also will Symmetrical change, thus reduce non-linear distortion;PMOS uses thick bank tube, to reduce the impact of leakage current;Pseudo-resistance uses single Only biasing circuit.
Programmable amplifier circuit with pseudo-resistance failure detection the most according to claim 4, it is characterised in that: described Pseudo-resistance biasing circuit be made up of three PMOS and two programmable current sources, be equally applicable to N-well process;Biasing circuit Two outfans be connected respectively to grid and the source electrode of pseudo-resistance, its difference in voltage is as the grid source of pseudo-two PMOS of resistance Voltage;In this biasing circuit, two PMOS are mutually matched, the 3rd PMOS then with two PMOS of pseudo-resistance Join;Programmable current source is used for changing pseudo-resistance, and then regulation programmable amplifier circuit bandwidth.
CN201610259160.7A 2016-04-25 2016-04-25 Programmable amplifier circuit having pseudo resistor failure detection function Pending CN105932974A (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107066009A (en) * 2017-05-27 2017-08-18 西安启达电子科技有限公司 A kind of low noise bandgap references source and the method for reduction band gap reference output noise
CN108088589A (en) * 2016-11-23 2018-05-29 大陆汽车电子(长春)有限公司 For detecting the device and method of the validity of thermistor
CN111342818A (en) * 2018-12-19 2020-06-26 力智电子股份有限公司 Filter and operation method thereof
CN112803895A (en) * 2020-12-31 2021-05-14 上海交通大学 Pseudo resistance correction circuit based on switched capacitor
WO2021120918A1 (en) * 2019-12-20 2021-06-24 邓晨曦 Analog front-end circuit for bioelectric sensor
CN117017308A (en) * 2023-10-09 2023-11-10 之江实验室 Slow wave neural signal amplifying circuit
WO2024008200A1 (en) * 2022-12-29 2024-01-11 杭州万高科技股份有限公司 Control circuit for fully-differential capacitive feedback amplifier, and control method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4797633A (en) * 1987-03-20 1989-01-10 Video Sound, Inc. Audio amplifier
CN101295965A (en) * 2007-04-27 2008-10-29 北京朗波芯微技术有限公司 Digital automatic gain control circuit apparatus
CN101557205A (en) * 2009-05-26 2009-10-14 中国科学院微电子研究所 Mixed mode AGC loop
CN101919693A (en) * 2010-09-13 2010-12-22 复旦大学 Monolithic integrated electrocardiosignal reading circuit
CN102355220A (en) * 2011-06-07 2012-02-15 中国科学院深圳先进技术研究院 Trap filter and low pass filter
CN104617889A (en) * 2015-02-09 2015-05-13 西安电子科技大学 Low-power-consumption and low-noise CMOS amplifier for ExG signal collecting system

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4797633A (en) * 1987-03-20 1989-01-10 Video Sound, Inc. Audio amplifier
CN101295965A (en) * 2007-04-27 2008-10-29 北京朗波芯微技术有限公司 Digital automatic gain control circuit apparatus
CN101557205A (en) * 2009-05-26 2009-10-14 中国科学院微电子研究所 Mixed mode AGC loop
CN101919693A (en) * 2010-09-13 2010-12-22 复旦大学 Monolithic integrated electrocardiosignal reading circuit
CN102355220A (en) * 2011-06-07 2012-02-15 中国科学院深圳先进技术研究院 Trap filter and low pass filter
CN104617889A (en) * 2015-02-09 2015-05-13 西安电子科技大学 Low-power-consumption and low-noise CMOS amplifier for ExG signal collecting system

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
肖功利 等: "一种基于T型伪电阻的可调超低高通角VGA", 《微电子学》 *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108088589A (en) * 2016-11-23 2018-05-29 大陆汽车电子(长春)有限公司 For detecting the device and method of the validity of thermistor
CN107066009A (en) * 2017-05-27 2017-08-18 西安启达电子科技有限公司 A kind of low noise bandgap references source and the method for reduction band gap reference output noise
CN111342818A (en) * 2018-12-19 2020-06-26 力智电子股份有限公司 Filter and operation method thereof
CN111342818B (en) * 2018-12-19 2024-04-30 力智电子股份有限公司 Filter and method of operation thereof
WO2021120918A1 (en) * 2019-12-20 2021-06-24 邓晨曦 Analog front-end circuit for bioelectric sensor
CN112803895A (en) * 2020-12-31 2021-05-14 上海交通大学 Pseudo resistance correction circuit based on switched capacitor
WO2024008200A1 (en) * 2022-12-29 2024-01-11 杭州万高科技股份有限公司 Control circuit for fully-differential capacitive feedback amplifier, and control method
CN117017308A (en) * 2023-10-09 2023-11-10 之江实验室 Slow wave neural signal amplifying circuit
CN117017308B (en) * 2023-10-09 2024-01-23 之江实验室 Slow wave neural signal amplifying circuit

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