CN105931997A - 暂时性复合式载板 - Google Patents

暂时性复合式载板 Download PDF

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CN105931997A
CN105931997A CN201510991506.8A CN201510991506A CN105931997A CN 105931997 A CN105931997 A CN 105931997A CN 201510991506 A CN201510991506 A CN 201510991506A CN 105931997 A CN105931997 A CN 105931997A
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胡迪群
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Abstract

本发明公开了一种暂时性复合式载板，包含上层基板、下层基板和黏着层，上层基板不具有电路，其材料选自因瓦合金、硅、合金42、氮化铝、烧结碳化物、铝、氧化铝、钛、二氧化锆、玻璃、铜箔基板以及不锈钢；下层基板不具有电路，其材料选自因瓦合金、硅、合金42、氮化铝、烧结碳化物、铝、氧化铝、钛、二氧化锆、玻璃、铜箔基板以及不锈钢；黏着层设置于上层基板与下层基板的中间，使上层基板与下层基板互相黏合。本发明利用下层基板的热膨胀系数(CTE)接近或是等于载板上方制品的热膨胀系数(CTE)，用来抵抗上方制品的板翘现象，使其减少或是免除「板翘」(warpage)。

Description

暂时性复合式载板
技术领域
本发明涉及半导体制程所使用的暂时性载板(temporary carrier)。
背景技术
图1A显示传统载板1为单层材料所制成，载板1的上方提供半导体制程处理区域，图中显示一系列的增层(build-up layer)10制作于载板1的上表面。图1A的范例显示增层10包含电路15与介电材料16。其他不同产品，例如多芯片封装的处理(图中未表示)也可以放置在载板1上面，进行加工处理。在后续的程序中，成品或是半成品，会自载板1上方剥离，进行其他的处理程序，然后，载板1可以回收，再重新利用。
图1B显示更多增层10被制作了，形成增层105。载板1以及上面的增层105，在半导体制程中都必须经过多次加热以及冷却的过程；由于不同材料之间的热膨胀系数(Coefficient of Thermal Expansion,CTE)不匹配的原因，于是，板翘(warpage)现象便会发生。如图中所示，载板1以及上面的增层105呈现向上弧形弯曲的状态。
图1C显示上面的增层105，在剥离载板1之后，仍然呈现向上弧形弯曲的状态。这种弯曲的状态，导致于后续制程在对位(registration)上的困难度大增，尤其是在半导体的愈来愈精细的制程中，例如纳米(nano meter,nm)制程中，影响很大。
另外，传统载板破裂时，大量碎片会对制程腔室(chamber)造成重大污染，一个更安全、无污染或是极少污染的更好载板，一直是半导体研发工程师所关注并且企求寻找、改善的事情。
图2显示美国专利US8,893,378揭露的解决板翘的一个先前技艺，包含载板1以及真空吸附***；真空吸附***上方提供载板1放置用，真空吸附***将载板1吸附使得载板1在后续制程中，经过多次加热与冷却，也可以保持平整，不会上下弯曲。利用载板本身的平整强度，克服或是减少上方产品在制程中产生板翘可能性。
载板1上方提供半导体制程使用，例如半导体增层(build-up)制程，可以在载板1上方制作。图中真空吸附***具有板架3于上方，抗热密封材料11安置于板架3上方，载板1放置在抗热密封材料11的上方；板架3具有通孔5。真空吸附***具有气体通道7，抽气帮浦9抽气时，气体A经由通孔5、通道7流出去，而将载板1吸附着保持平整。此一先前技艺的缺点是设备复杂、体积大且昂贵，它至少包含了板架3与抽气帮浦9；一个更简单易行的方法被期待开发了。
发明内容
针对现有技术的上述不足，根据本发明的实施例，希望提供一种在半导体制程中，用来抵抗上方制品的板翘现象，使其减少或是免除「板翘」(warpage)的暂时性复合式载板。
根据实施例，本发明提供的一种暂时性复合式载板，包含上层基板、下层基板和黏着层，其中：
上层基板不具有电路，其材料选自因瓦合金、硅、合金42、氮化铝、烧结碳化物、铝、氧化铝、钛、二氧化锆、玻璃、铜箔基板以及不锈钢；
下层基板不具有电路，其材料选自因瓦合金、硅、合金42、氮化铝、烧结碳化物、铝、氧化铝、钛、二氧化锆、玻璃、铜箔基板以及不锈钢；
黏着层设置于上层基板与下层基板的中间，使上层基板与下层基板互相黏合。
根据一个实施例，本发明前述暂时性复合式载板中，上层基板的厚度与下层基板的厚度相同。
根据一个实施例，本发明前述暂时性复合式载板中，上层基板的厚度比下层基板的厚度薄。
根据一个实施例，本发明前述暂时性复合式载板中，上层基板的厚度比下层基板的厚度厚。
根据一个实施例，本发明前述暂时性复合式载板中，上层基板的热膨胀系数为1-4ppm，下层基板的热膨胀系数为4.5-18ppm；或者下层基板的热膨胀系数为1-4ppm，上层基板的热膨胀系数为4.5-18ppm。
根据一个实施例，本发明前述暂时性复合式载板中，上层基板的材料选自因瓦合金、硅、玻璃和铜箔基板，下层基板的材料选自合金42、氮化铝、烧结碳化物、铝、氧化铝、钛、二氧化锆、玻璃、铜箔基板以及不锈钢；或者下层基板的材料选自因瓦合金、硅、玻璃和铜箔基板，上层基板的材料选自合金42、氮化铝、烧结碳化物、铝、氧化铝、钛、二氧化锆、玻璃、铜箔基板以及不锈钢。
根据一个实施例，本发明前述暂时性复合式载板中，进一步包含高分子聚合物，高分子聚合物包覆复合式载板周边，自载板周边向外圆滑凸出。
根据一个实施例，本发明前述暂时性复合式载板中，高分子聚合物具有一个高度与载板厚度切齐。
根据一个实施例，本发明前述暂时性复合式载板中，载板周边板材转角做倒角处理。
根据一个实施例，本发明前述暂时性复合式载板中，倒角呈斜面倒角或是弧面倒角。
相对于现有技术，本发明利用下层基板的热膨胀系数(CTE)接近或是等于载板上方制品的热膨胀系数(CTE)，用来抵抗上方制品的板翘现象，使其减少或是免除「板翘」(warpage)。依据本发明，提供一个半导体制程的加工区域，使得一个成品、半成品、或是半导体增层的板翘问题可以被克服。本发明暂时性复合式载板包含至少两片基材黏合在一起，这两片基材具有的CTE不同。例如：上层基板具有相对较低的CTE、而下层基板具有相对较高的CTE。这样的组合，下层基板的膨胀收缩可以接近上方制程的物品的膨胀收缩，而使得板翘程度可以减少或是免除。
本发明优点之一是安全，本发明暂时性复合式载板受撞击以后，碎裂材料仍然会被中间黏合材料黏合在一起，不会污染制程小室(chamber)空间。
本发明优点之二是可以克服上方制品的板翘问题，本发明暂时性复合式载板的组合，例如：上层基板具有相对较低的CTE、而下层基板具有相对较高的CTE。这样的组合，下层基板的膨胀收缩可以接近上方制程的物品的膨胀收缩，而使得板翘程度可以减少或是免除。
本发明优点之三是不同组合的选择性，可以克服上方不同制品的板翘问题，本发明暂时性复合式载板的组合，可以选择具有不同CTE的材料制成，用以匹配不同制程产品的CTE需求，而可以得到良好的克服板翘的效果。
附图说明
图1A-1C为传统载板的结构示意图。
图2为解决板翘的一个先前技艺的示意图。
图3A-3C为增层制程在本发明的复合式载板上制作的状态示意图。
图4A为本发明暂时性复合式载板第一实施例的结构示意图。
图4B为本发明暂时性复合式载板第二实施例的结构示意图。
图4C为本发明暂时性复合式载板第三实施例的结构示意图。
图5为本发明暂时性复合式载板第四实施例的结构示意图。
图6为本发明暂时性复合式载板第五实施例的结构示意图。
图7为本发明暂时性复合式载板第六实施例的结构示意图。
图8A-8C为本发明暂时性复合式载板的修饰版实施例的结构示意图。
具体实施方式
下面结合附图和具体实施例，进一步阐述本发明。这些实施例应理解为仅用于说明本发明而不用于限制本发明的保护范围。在阅读了本发明记载的内容之后，本领域技术人员可以对本发明作各种改动或修改，这些等效变化和修改同样落入本发明权利要求所限定的范围。
图3A-3C显示增层制程在本发明的复合式载板上制作的状态。
图3A显示增层20制作于本发明的复合式载板200上，增层20包含有电路15与介电材料16，这通常是制作电路的起始步骤。
图3B显示更多增层(build-up layer)制作于本发明的暂时性复合式载板200上，形成增层205于复合式载板200上方，其中，增层205包含有电路15与介电材料16。复合式载板200的上层基板21T与下层基板21B选用不同材料，例如：上层基板21T选用材料的CTE小于下层基板21B选用材料的CTE，且下层基板21B的CTE约略近似于上方增层205制品的整体CTE，则板翘便可以被克服至最小，或是完全无板翘发生。
增层205制程只是一个范例说明而已，其中的金属导线15的CTE约等于17ppm,介电层16例如使用聚苯恶唑(Polybenzoxazole；PBO)、聚酰亚胺(Polyimide,PI)、或是苯环丁烯(benzocyclobutene,BCB),则它们的CTE约等于30ppm.整个增层205的CTE约等于20ppm。
本发明便是选择适当的基板材料，使得下层基板21B的CTE接近上方增层205的整体CTE；并选用CTE比下层基板21B小的基板材料作为上层基板21T，使得下层基板21B与上方增层205的膨胀收缩至少有部分可以互相抵销，使得制品205剥离复合式载板200之前，能够减少或是免除「板翘」或是电路扭曲现象。
可以作为本发明基板的材料具有CTE在1-18ppm者，至少包含下述各种材料：因瓦合金(Invar,1ppm)、硅(Si,3ppm)、合金42(Alloy 42,4.8ppm)、氮化铝(AlN,5ppm)、烧结碳化物(Cemented Carbide,5.5ppm)、铝(Alumina,7.2ppm)、氧化铝(Al2O3,7ppm)、钛(Ti,8.6ppm)、二氧化锆(Zirconia,10.5ppm)、玻璃(Glass,0-10ppm)、铜箔基板(CCL,1-17ppm)、以及不锈钢(stainless steel,10-18ppm)。
玻璃(Glass,0-10ppm)、铜箔基板(CCL,1-17ppm)、以及不锈钢(stainless steel,10-18ppm)等具有一个CTE范围区间者，乃系其个别可以依据不同的配方制成的产品，可以有不同的CTE范围，使用者可以选择使用，例如选择CTE为7-8ppm的产品使用。
图3C显示增层205自载板200玻璃以后的状态，比对于右边的图1C，图3C产品减少了板翘如高度24所示，其中图1C是在习知技艺的载板1上制作的增层105。
图4A显示本发明复合式载板的第一实施例。
图4显示复合式载板200包含有上层基板21T、黏着层22、与下层基板21B；其中，上层基板21T借着黏着层22与下层基板21B黏合再一起，构成本发明的复合式载板。本发明的上层基板21T不具有电路。
本发明的下层基板21B，亦不具有电路。材料可以与上层基板21T相同或是不同。
本发明的复合式载板若是受到撞击、不慎破裂时，由于中央黏着层22的黏着特性，没有碎片会脱落或是只有极少碎片会脱落，不会对制程腔室(chamber)造成重大污染。
图4B显示本发明复合式载板的第二实施例。
图4B显示复合式载板201，具有上层基板21T、下层基板31B、以及黏着层22；其中，黏着层22位于中间，将上层基板21T与下层基板31B黏合再一起，形成一片安全基板。下层基板31B的厚度大于上层基板21T的厚度。较厚的下层基板31B，提供较强的抵抗力，用以克服上层基板21T上方区域23制程前后的物品所产生的板翘或是电路变形。
图4C显示本发明复合式载板的第三实施例。
图4C显示复合式载板202，具有上层基板31T、下层基板21B、以及黏着层22；其中，黏着层22位于中间，将上层基板31T与下层基板21B黏合再一起，形成一片安全基板。下层基板21B的厚度小于上层基板31T的厚度。较厚的上层基板31T，提供较强的抵抗力，用以克服上层基板31T上方区域23制程前后的物品所产生的板翘或是变形。
图5显示本发明复合式载板的第四实施例。
图5显示复合式载板的上层基板35T或是下层基板35B，可以选择的基材包含一种具有CTE在1-18ppm者；上层基板35T以及下层基板35B可以是相同的材料或是不同的材料。
图6显示本发明复合式载板的第五实施例。
图6显示复合式载板的上层基板35T与下层基板35B，使用不同CTE的材料，图中显示上层基板35T选择CTE在1-4ppm的材料、下层基板35B选择CTE在4.5-18ppm的材料。
CTE在1-4ppm的材料，包含：因瓦合金(Invar,1ppm)、硅(Si,3ppm)、玻璃(Glass,0-10ppm)、以及铜箔基板(CCL,1-17ppm)；其中，玻璃(Glass,0-10ppm)系选择其中的1-4ppm的玻璃，铜箔基板(CCL,1-17ppm)系选择其中的1-4ppm的材料。
CTE在4.5-18ppm的材料，包含：合金42(Alloy 42,4.8ppm)、氮化铝(AlN,5ppm)、烧结碳化物(Cemented Carbide,5.5ppm)、铝(Alumina,7.2ppm)、氧化铝(Al2O3,7ppm)、钛(Ti,8.6ppm)、二氧化锆(Zirconia,10.5ppm)、玻璃(Glass,0-10ppm)、铜箔基板(CCL,1-17ppm)、以及不锈钢(stainless steel,10-18ppm)。其中，玻璃(Glass,0-10ppm)系选择其中的4.8-10ppm的玻璃，铜箔基板(CCL,1-17ppm)系选择其中的4.8-17ppm的材料。
图7显示本发明复合式载板的第六实施例。
图7显示复合式载板的上层基板35T与下层基板35B，使用不同CTE的材料，图中显示上层基板35T选择CTE在4.5-18ppm的材料、下层基板35B选择CTE在1-4ppm的材料。
图8A-8C显示本发明复合式载板的修饰版实施例。
图8A显示复合式载板的上层基板35T与下层基板35B的周边截面，使用高分子聚合物38包覆着提高整体坚固特性。高分子聚合物38自载板周边向外圆滑凸出，具有一个高度h与载板厚度t切齐。
图8B显示复合式载板的上层基板35T与下层基板35B的周边截面转角，做倒角(chamfer)处理。图中显示倒角为斜面。
图8C显示复合式载板的上层基板35T与下层基板35B的周边截面转角，做倒角(chamfer)处理。图中显示倒角为弧面。

Claims (17)

1.一种暂时性复合式载板，其特征是，包含上层基板、下层基板和黏着层，其中：
上层基板不具有电路，其材料选自因瓦合金、硅、合金42、氮化铝、烧结碳化物、铝、氧化铝、钛、二氧化锆、玻璃、铜箔基板以及不锈钢；
下层基板不具有电路，其材料选自因瓦合金、硅、合金42、氮化铝、烧结碳化物、铝、氧化铝、钛、二氧化锆、玻璃、铜箔基板以及不锈钢；
黏着层设置于上层基板与下层基板的中间，使上层基板与下层基板互相黏合。
2.如权利要求1所述的暂时性复合式载板，其特征是，上层基板的厚度与下层基板的厚度相同。
3.如权利要求1所述的暂时性复合式载板，其特征是，上层基板的厚度比下层基板的厚度薄。
4.如权利要求1所述的暂时性复合式载板，其特征是，上层基板的厚度比下层基板的厚度厚。
5.如权利要求1所述的暂时性复合式载板，其特征是，上层基板的热膨胀系数为1-4ppm，下层基板的热膨胀系数为4.5-18ppm；或者下层基板的热膨胀系数为1-4ppm，上层基板的热膨胀系数为4.5-18ppm。
6.如权利要求5所述的暂时性复合式载板，其特征是，上层基板的材料选自因瓦合金、硅、玻璃和铜箔基板，下层基板的材料选自合金42、氮化铝、烧结碳化物、铝、氧化铝、钛、二氧化锆、玻璃、铜箔基板以及不锈钢；或者下层基板的材料选自因瓦合金、硅、玻璃和铜箔基板，上层基板的材料选自合金42、氮化铝、烧结碳化物、铝、氧化铝、钛、二氧化锆、玻璃、铜箔基板以及不锈钢。
7.如权利要求6所述的暂时性复合式载板，其特征是，上层基板的厚度与下层基板的厚度相同。
8.如权利要求6所述的暂时性复合式载板，其特征是，上层基板的厚度比下层基板的厚度薄。
9.如权利要求6所述的暂时性复合式载板，其特征是，上层基板的厚度比下层基板的厚度厚。
10.如权利要求1所述的暂时性复合式载板，其特征是，进一步包含高分子聚合物，高分子聚合物包覆复合式载板周边，自载板周边向外圆滑凸出。
11.如权利要求10所述的暂时性复合式载板，其特征是，高分子聚合物具有一个高度与载板厚度切齐。
12.如权利要求10所述的暂时性复合式载板，其特征是，载板周边板材转角做倒角处理。
13.如权利要求12所述的暂时性复合式载板，其特征是，倒角呈斜面倒角或是弧面倒角。
14.如权利要求6所述的暂时性复合式载板，其特征是，进一步包含高分子聚合物，高分子聚合物包覆载板周边垂直截面处，自载板周边向外圆滑凸出。
15.如权利要求14所述的暂时性复合式载板，其特征是，高分子聚合物具有一个高度与载板厚度切齐。
16.如权利要求14所述的暂时性复合式载板，其特征是，载板周边板材转角做倒角处理。
17.如权利要求16所述的暂时性复合式载板，其特征是，倒角呈斜面倒角或是弧面倒角。
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