CN105922675A - Aluminum-based diamond insulated gate bipolar transistor (IGBT) heat-radiating substrate material and preparation method thereof - Google Patents
Aluminum-based diamond insulated gate bipolar transistor (IGBT) heat-radiating substrate material and preparation method thereof Download PDFInfo
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Abstract
The invention discloses an aluminum-based diamond insulated gate bipolar transistor (IGBT) heat-radiating substrate material and a preparation method thereof. The heat-radiating substrate comprises three layers which are respectively a fine-particle diamond/aluminum composite layer, a coarse-particle diamond/aluminum composite layer and a fine-particle diamond/aluminum composite layer, wherein the fine-particle diamond/aluminum composite layer and the coarse-particle diamond/aluminum composite layer respectively comprise two layers; the contents of the diamond particles in each layer are different; the particle size of the fine-particle diamond is 2 to 5 [mu]m; and the particle size of the coarse-particle diamond is 20 to 30 [mu]m. The invention also discloses the preparation method for the heat-radiating substrate material. The aluminum-based diamond insulated gate bipolar transistor (IGBT) heat-radiating substrate material has the advantages of good heat-radiating properties, low surface roughness and good welding properties.
Description
Technical field:
The present invention relates to technical field of composite materials, be specifically related to a kind of aluminum base diamond IGBT heat-radiating substrate material.
Background technology:
Along with power and the integrated level of integrated circuit improve, the caloric value of chip unit are is also constantly increasing.Simultaneously
Along with developing of high power module, heat dissipation problem is one of lethal factor affecting its function life-span, therefore solves
One of important means of integrated circuit (IC) system heat dissipation problem is by rational Electronic Packaging and thermal design, as used heat radiation
Device or liquid-cooling system；But, these methods can not solve root problem, and the most therefore component costs increases.?
The method effectively solving heat dissipation problem is to use low thermal coefficient of expansion, high thermal conductivity coefficient, the Electronic Packaging of new generation of light weight
Material, because this can fundamentally solve the cooling system problem rationalized.
New Materials for Electric Packing is mainly bag of greatest concern in composite class, the most such as metal-base composites
Include carborundum/aluminum, diamond/aluminum, diamond/copper etc..And carbonization sial although to have low cost, following process simple
Etc. feature, but considering with regard to radiating efficiency, thermal coefficient of expansion and density, and diamond/aluminum composite is all the time
Efficiently, energy-conservation, stable first-selection.
IGBT (insulated gate bipolar transistor), is made up of double pole triode and insulating gate type field effect tube, is one
Kind of compound full-control type voltage driven type power semiconductor, although it has more advantage than the product of same type, but with
Its unit are caloric value to increase, relative electronic components is difficult to solve because of the problem of the too high inefficacy of temperature all the time,
And its welding performance is bad, layer easily comes off.
Summary of the invention:
It is an object of the invention to provide a kind of aluminum base diamond IGBT heat-radiating substrate material, this substrate thermal diffusivity is good, surface
Roughness is low, and its good welding performance.
It is a further object to provide the preparation method of this aluminum base diamond IGBT heat-radiating substrate material.
For achieving the above object, the present invention is by the following technical solutions:
A kind of aluminum base diamond IGBT heat-radiating substrate material, this heat-radiating substrate includes three layers, is respectively as follows: fine grained Buddha's warrior attendant
Stone/aluminum composite bed-coarse diamond/aluminum composite bed-fine grained diamond/aluminum composite bed, described fine grained diamond/
Aluminum composite bed and coarse diamond/aluminum composite bed include two-layer respectively, and the diamond particle content of two-layer is different, described
The size of fine grained diamond is 2-5 μm, and the size of coarse diamond is 20-30 μm.
Preferred as technique scheme, the thickness of described fine grained diamond/aluminum composite bed is 0.5-1mm, thick
The thickness shell of particle diamond/aluminum composite bed adjusts according to goods desired thickness.
Preferred as technique scheme, described fine grained diamond/aluminum composite bed and coarse diamond/aluminum are combined
Layer includes that two-layer, the mass fraction of upper strata diamond are 60-70% respectively, and the content of lower floor's diamond is the half on upper strata.
The preparation method of a kind of aluminum base diamond IGBT heat-radiating substrate material, comprises the following steps:
(1) the fine grained diamond of different quality ratio, coarse diamond are joined batch mixing with aluminum substrate powder respectively
In machine, add steel ball and carry out mix homogeneously, make the mixed-powder that diamond content is different；
(2) by mixed-powders different to mixed-powders different for fine grained diamond content, coarse diamond content,
The mixed-powder that fine grained diamond content is different is packaged in mould successively, carries out cold moudling, obtains billet；
(3) by the billet that is packaged in mould under inert gas atmosphere, carry out hot-forming, by hot-forming
Billet be encapsulated in metal capsule, carry out high-temperature vacuum degassing processing；
(4) billet through high-temperature vacuum degassing processing being carried out high temperature insostatic pressing (HIP) densification, being shaped to consistency is 100%
Composite billet, finally machining remove the metal capsule outside high temperature insostatic pressing (HIP) billet, obtain aluminum base diamond IGBT
Heat-radiating substrate material.
Preferred as technique scheme, in step (2), the pressure of cold moudling is 50-60MPa, densification of colding pressing
Degree is 70-90%.
Preferred as technique scheme, in step (3), hot-forming hot pressing temperature is 400-500 DEG C, pressure
For 45-70MPa, hot pressing consistency is 70%-90%.
Preferred as technique scheme, in step (3), the outgassing temperature of high-temperature vacuum degassing processing is
540-620 DEG C, programming rate is 20-50 DEG C/h.Vacuum is below 0.45Pa, and the degasification time is less than 28h.
Preferred as technique scheme, in step (4), hip temperature and high-temperature vacuum degassing processing temperature
Keeping consistent, for 540-620 DEG C, pressure is 100-130MPa, heat-insulation pressure keeping 6h.
Preferred as technique scheme, in step (4), obtained aluminum base diamond IGBT heat-radiating substrate material
Material includes that fine grained diamond/Al composite bed that fine grained diamond content is 60-70%, fine grained diamond contain successively
Amount is the coarse diamond of 60-70% for the fine grained diamond/Al composite bed of 30-35%, coarse diamond content
/ Al composite bed, coarse diamond content are that the coarse diamond/Al composite bed of 30-35%, fine grained diamond contain
The fine grained diamond that amount is the fine grained diamond/Al composite bed of 60-70%, fine grained diamond content is 30-35%
/ Al composite bed.
The method have the advantages that
(1) present invention uses powder metallurgical technique, and the content of diamond particles can be controlled；
(2) present invention uses hot-pressing technique to make billet hot pressing consistency be 70-90%, uses inert gas warranty powder
Will not be oxidized, it is pressed at a suitable temperature, the residual stress of every layer can be allowed all to be released, no
There will be Interlaminar Crack；
(3) the aluminum base diamond IGBT heat-radiating substrate material heat dispersion that the present invention prepares is excellent, wear-resisting, corrosion-resistant
Performance is good, and its surface roughness is low, substantially reduces it and contacts heat that is too high due to surface roughness and that cause with chip
Resistance.
Detailed description of the invention:
In order to be better understood from the present invention, below by embodiment, the present invention is further described, and embodiment is served only for solving
Release the present invention, the present invention will not be constituted any restriction.
Embodiment 1
A kind of aluminum base diamond IGBT heat-radiating substrate material, this heat-radiating substrate include successively diamond content be 60% thin
Particles diamonds/aluminum composite bed, diamond content be 30% fine grained diamond/Al composite bed, diamond content be
The coarse diamond of 60%/aluminum composite bed, diamond content are coarse diamond/Al composite bed, the diamond of 30%
Fine grained diamond/Al composite bed that fine grained diamond/aluminum composite bed that content is 60%, diamond content are 30%,
The size of described fine grained diamond is 2 μm, and the size of coarse diamond is 20 μm, fine grained Buddha's warrior attendant
The thickness of stone/Al composite bed is 0.5mm；
Its preparation method comprises the following steps:
(1) the fine grained diamond of different quality ratio, coarse diamond are joined batch mixing with aluminum substrate powder respectively
In machine, add steel ball and carry out mix homogeneously, make the mixed-powder that diamond content is different；
(2) by mixed-powders different to mixed-powders different for fine grained diamond content, coarse diamond content,
The mixed-powder that fine grained diamond content is different is packaged in mould successively, under the pressure that pressure is 50MPa
Carrying out cold moudling, consistency of colding pressing is 70%, obtains billet；
(3) by the billet that is packaged in mould under inert gas atmosphere, it is 400 DEG C in hot pressing temperature, pressure
Hot-forming for carrying out under conditions of 45MPa, hot pressing consistency is 70%, and hot-forming billet is encapsulated into metal bag
In set, carrying out high-temperature vacuum degassing processing, the outgassing temperature of high-temperature vacuum degassing processing is 540 DEG C, and programming rate is
20℃/h.Vacuum is below 0.45Pa, and the degasification time is less than 28h；
(4) by the billet through high-temperature vacuum degassing processing at 540 DEG C, pressure is that to carry out heat etc. under conditions of 100MPa quiet
Pressure densification, heat-insulation pressure keeping 6h, it is shaped to the composite billet that consistency is 100%, heat etc. is removed in finally machining
Metal capsule outside static pressure billet, obtains aluminum base diamond IGBT heat-radiating substrate material.
Embodiment 2
A kind of aluminum base diamond IGBT heat-radiating substrate material, this heat-radiating substrate include successively diamond content be 70% thin
Particles diamonds/aluminum composite bed, diamond content be 35% fine grained diamond/Al composite bed, diamond content be
The coarse diamond of 70%/aluminum composite bed, diamond content are coarse diamond/Al composite bed, the diamond of 35%
Fine grained diamond/Al composite bed that fine grained diamond/aluminum composite bed that content is 70%, diamond content are 35%,
The size of described fine grained diamond is 5 μm, and the size of coarse diamond is 30 μm, fine grained Buddha's warrior attendant
The thickness of stone/Al composite bed is 1mm；
Its preparation method comprises the following steps:
(1) the fine grained diamond of different quality ratio, coarse diamond are joined batch mixing with aluminum substrate powder respectively
In machine, add steel ball and carry out mix homogeneously, make the mixed-powder that diamond content is different；
(2) by mixed-powders different to mixed-powders different for fine grained diamond content, coarse diamond content,
The mixed-powder that fine grained diamond content is different is packaged in mould successively, under the pressure that pressure is 60MPa
Carrying out cold moudling, consistency of colding pressing is 90%, obtains billet；
(3) by the billet that is packaged in mould under inert gas atmosphere, it is 500 DEG C in hot pressing temperature, pressure
Hot-forming for carrying out under conditions of 70MPa, hot pressing consistency is 90%, and hot-forming billet is encapsulated into metal bag
In set, carrying out high-temperature vacuum degassing processing, the outgassing temperature of high-temperature vacuum degassing processing is 620 DEG C, and programming rate is
50℃/h.Vacuum is below 0.45Pa, and the degasification time is less than 28h；
(4) by the billet through high-temperature vacuum degassing processing at 620 DEG C, pressure is that to carry out heat etc. under conditions of 130MPa quiet
Pressure densification, heat-insulation pressure keeping 6h, it is shaped to the composite billet that consistency is 100%, heat etc. is removed in finally machining
Metal capsule outside static pressure billet, obtains aluminum base diamond IGBT heat-radiating substrate material.
Embodiment 3
A kind of aluminum base diamond IGBT heat-radiating substrate material, this heat-radiating substrate include successively diamond content be 62% thin
Particles diamonds/aluminum composite bed, diamond content be 31% fine grained diamond/Al composite bed, diamond content be
The coarse diamond of 62%/aluminum composite bed, diamond content are coarse diamond/Al composite bed, the diamond of 31%
Fine grained diamond/Al composite bed that fine grained diamond/aluminum composite bed that content is 62%, diamond content are 31%,
The size of described fine grained diamond is 3 μm, and the size of coarse diamond is 25 μm, fine grained Buddha's warrior attendant
The thickness of stone/Al composite bed is 0.6mm；
Its preparation method comprises the following steps:
(1) the fine grained diamond of different quality ratio, coarse diamond are joined batch mixing with aluminum substrate powder respectively
In machine, add steel ball and carry out mix homogeneously, make the mixed-powder that diamond content is different；
(2) by mixed-powders different to mixed-powders different for fine grained diamond content, coarse diamond content,
The mixed-powder that fine grained diamond content is different is packaged in mould successively, under the pressure that pressure is 55MPa
Carrying out cold moudling, consistency of colding pressing is 75%, obtains billet；
(3) by the billet that is packaged in mould under inert gas atmosphere, it is 420 DEG C in hot pressing temperature, pressure
Hot-forming for carrying out under conditions of 50MPa, hot pressing consistency is 80%, and hot-forming billet is encapsulated into metal bag
In set, carrying out high-temperature vacuum degassing processing, the outgassing temperature of high-temperature vacuum degassing processing is 560 DEG C, and programming rate is
30℃/h.Vacuum is below 0.45Pa, and the degasification time is less than 28h；
(4) by the billet through high-temperature vacuum degassing processing at 560 DEG C, pressure is that to carry out heat etc. under conditions of 110MPa quiet
Pressure densification, heat-insulation pressure keeping 6h, it is shaped to the composite billet that consistency is 100%, heat etc. is removed in finally machining
Metal capsule outside static pressure billet, obtains aluminum base diamond IGBT heat-radiating substrate material.
Embodiment 4
A kind of aluminum base diamond IGBT heat-radiating substrate material, this heat-radiating substrate include successively diamond content be 64% thin
Particles diamonds/aluminum composite bed, diamond content be 32% fine grained diamond/Al composite bed, diamond content be
The coarse diamond of 64%/aluminum composite bed, diamond content are coarse diamond/Al composite bed, the diamond of 32%
Fine grained diamond/Al composite bed that fine grained diamond/aluminum composite bed that content is 64%, diamond content are 32%,
The size of described fine grained diamond is 4 μm, and the size of coarse diamond is 20 μm, fine grained Buddha's warrior attendant
The thickness of stone/Al composite bed is 0.7mm；
Its preparation method comprises the following steps:
(1) the fine grained diamond of different quality ratio, coarse diamond are joined batch mixing with aluminum substrate powder respectively
In machine, add steel ball and carry out mix homogeneously, make the mixed-powder that diamond content is different；
(2) by mixed-powders different to mixed-powders different for fine grained diamond content, coarse diamond content,
The mixed-powder that fine grained diamond content is different is packaged in mould successively, under the pressure that pressure is 60MPa
Carrying out cold moudling, consistency of colding pressing is 80%, obtains billet；
(3) by the billet that is packaged in mould under inert gas atmosphere, it is 440 DEG C in hot pressing temperature, pressure
Hot-forming for carrying out under conditions of 55MPa, hot pressing consistency is 75%, and hot-forming billet is encapsulated into metal bag
In set, carrying out high-temperature vacuum degassing processing, the outgassing temperature of high-temperature vacuum degassing processing is 580 DEG C, and programming rate is
35℃/h.Vacuum is below 0.45Pa, and the degasification time is less than 28h；
(4) by the billet through high-temperature vacuum degassing processing at 580 DEG C, pressure is that to carry out heat etc. under conditions of 120MPa quiet
Pressure densification, heat-insulation pressure keeping 6h, it is shaped to the composite billet that consistency is 100%, heat etc. is removed in finally machining
Metal capsule outside static pressure billet, obtains aluminum base diamond IGBT heat-radiating substrate material.
Embodiment 5
A kind of aluminum base diamond IGBT heat-radiating substrate material, this heat-radiating substrate include successively diamond content be 66% thin
Particles diamonds/aluminum composite bed, diamond content be 33% fine grained diamond/Al composite bed, diamond content be
The coarse diamond of 66%/aluminum composite bed, diamond content are coarse diamond/Al composite bed, the diamond of 33%
Fine grained diamond/Al composite bed that fine grained diamond/aluminum composite bed that content is 66%, diamond content are 33%,
The size of described fine grained diamond is 3 μm, and the size of coarse diamond is 25 μm, fine grained Buddha's warrior attendant
The thickness of stone/Al composite bed is 0.8mm；
Its preparation method comprises the following steps:
(1) the fine grained diamond of different quality ratio, coarse diamond are joined batch mixing with aluminum substrate powder respectively
In machine, add steel ball and carry out mix homogeneously, make the mixed-powder that diamond content is different；
(2) by mixed-powders different to mixed-powders different for fine grained diamond content, coarse diamond content,
The mixed-powder that fine grained diamond content is different is packaged in mould successively, under the pressure that pressure is 55MPa
Carrying out cold moudling, consistency of colding pressing is 85%, obtains billet；
(3) by the billet that is packaged in mould under inert gas atmosphere, it is 460 DEG C in hot pressing temperature, pressure
Hot-forming for carrying out under conditions of 60MPa, hot pressing consistency is 85%, and hot-forming billet is encapsulated into metal bag
In set, carrying out high-temperature vacuum degassing processing, the outgassing temperature of high-temperature vacuum degassing processing is 600 DEG C, and programming rate is
40℃/h.Vacuum is below 0.45Pa, and the degasification time is less than 28h；
(4) by the billet through high-temperature vacuum degassing processing at 600 DEG C, pressure is that to carry out heat etc. under conditions of 120MPa quiet
Pressure densification, heat-insulation pressure keeping 6h, it is shaped to the composite billet that consistency is 100%, heat etc. is removed in finally machining
Metal capsule outside static pressure billet, obtains aluminum base diamond IGBT heat-radiating substrate material.
Embodiment 6
A kind of aluminum base diamond IGBT heat-radiating substrate material, this heat-radiating substrate include successively diamond content be 68% thin
Particles diamonds/aluminum composite bed, diamond content be 34% fine grained diamond/Al composite bed, diamond content be
The coarse diamond of 68%/aluminum composite bed, diamond content are coarse diamond/Al composite bed, the diamond of 34%
Fine grained diamond/Al composite bed that fine grained diamond/aluminum composite bed that content is 68%, diamond content are 34%,
The size of described fine grained diamond is 5 μm, and the size of coarse diamond is 25 μm, fine grained Buddha's warrior attendant
The thickness of stone/Al composite bed is 0.9mm；
Its preparation method comprises the following steps:
(1) the fine grained diamond of different quality ratio, coarse diamond are joined batch mixing with aluminum substrate powder respectively
In machine, add steel ball and carry out mix homogeneously, make the mixed-powder that diamond content is different；
(2) by mixed-powders different to mixed-powders different for fine grained diamond content, coarse diamond content,
The mixed-powder that fine grained diamond content is different is packaged in mould successively, under the pressure that pressure is 60MPa
Carrying out cold moudling, consistency of colding pressing is 85%, obtains billet；
(3) by the billet that is packaged in mould under inert gas atmosphere, it is 480 DEG C in hot pressing temperature, pressure
Hot-forming for carrying out under conditions of 65MPa, hot pressing consistency is 90%, and hot-forming billet is encapsulated into metal bag
In set, carrying out high-temperature vacuum degassing processing, the outgassing temperature of high-temperature vacuum degassing processing is 610 DEG C, and programming rate is
45℃/h.Vacuum is below 0.45Pa, and the degasification time is less than 28h；
(4) by the billet through high-temperature vacuum degassing processing at 610 DEG C, pressure is that to carry out heat etc. under conditions of 125MPa quiet
Pressure densification, heat-insulation pressure keeping 6h, it is shaped to the composite billet that consistency is 100%, heat etc. is removed in finally machining
Metal capsule outside static pressure billet, obtains aluminum base diamond IGBT heat-radiating substrate material.
Claims (9)
1. an aluminum base diamond IGBT heat-radiating substrate material, it is characterised in that this heat-radiating substrate bag
Include three layers, be respectively as follows: fine grained diamond/aluminum composite bed-coarse diamond/aluminum composite bed-thin
Particle diamond/aluminum composite bed, described fine grained diamond/aluminum composite bed and coarse diamond/aluminum are compound
Layer includes two-layer respectively, and the diamond particle content of two-layer is different, the particle diameter of described fine grained diamond
Size is 2-5 μm, and the size of coarse diamond is 20-30 μm.
2. a kind of aluminum base diamond IGBT heat-radiating substrate material as claimed in claim 1, its feature
Being, the thickness of described fine grained diamond/aluminum composite bed is 0.5-1mm, and coarse diamond/aluminum is multiple
The thickness closing layer can adjust according to goods desired thickness.
3. a kind of aluminum base diamond IGBT heat-radiating substrate material as claimed in claim 1, its feature
Being, described fine grained diamond/aluminum composite bed and coarse diamond/aluminum composite bed include two respectively
Layer, the mass fraction of upper strata diamond is 60-70%, and the content of lower floor's diamond is the half on upper strata.
4. a kind of aluminum base diamond IGBT heat-radiating substrate material as described in claims 1 to 3 is arbitrary
Preparation method, it is characterised in that comprise the following steps:
(1) by the fine grained diamond of different quality ratio, coarse diamond respectively with aluminum substrate powder
Join in batch mixer, add steel ball and carry out mix homogeneously, make the mixed powder that diamond content is different
End；
(2) by different to mixed-powders different for fine grained diamond content, coarse diamond content
The mixed-powder that mixed-powder, fine grained diamond content are different is packaged in mould successively, enters
Row cold moudling, obtains billet；
(3) by the billet that is packaged in mould under inert gas atmosphere, carry out hot-forming,
Hot-forming billet is encapsulated in metal capsule, carries out high-temperature vacuum degassing processing；
(4) billet through high-temperature vacuum degassing processing is carried out high temperature insostatic pressing (HIP) densification, be shaped to densification
Degree is the composite billet of 100%, and the metal capsule outside high temperature insostatic pressing (HIP) billet is removed in finally machining,
Obtain aluminum base diamond IGBT heat-radiating substrate material.
The preparation side of a kind of aluminum base diamond IGBT heat-radiating substrate material the most as claimed in claim 4
Method, it is characterised in that in step (2), the pressure of cold moudling is 50-60MPa, consistency of colding pressing
For 70-90%.
The preparation side of a kind of aluminum base diamond IGBT heat-radiating substrate material the most as claimed in claim 4
Method, it is characterised in that in step (3), hot-forming hot pressing temperature is 400-500 DEG C, pressure is
45-70MPa, hot pressing consistency is 70%-90%.
The preparation side of a kind of aluminum base diamond IGBT heat-radiating substrate material the most as claimed in claim 4
Method, it is characterised in that in step (3), the outgassing temperature of high-temperature vacuum degassing processing is 540-620 DEG C,
Programming rate is 20-50 DEG C/h.Vacuum is below 0.45Pa, and the degasification time is less than 28h.
The preparation side of a kind of aluminum base diamond IGBT heat-radiating substrate material the most as claimed in claim 4
Method, it is characterised in that in step (4), hip temperature is protected with high-temperature vacuum degassing processing temperature
Holding consistent, for 540-620 DEG C, pressure is 100-130MPa, heat-insulation pressure keeping 6h.
The preparation side of a kind of aluminum base diamond IGBT heat-radiating substrate material the most as claimed in claim 4
Method, it is characterised in that in step (4), obtained aluminum base diamond IGBT heat-radiating substrate material
Include fine grained diamond/Al composite bed, fine grained that fine grained diamond content is 60-70% successively
Diamond content is that the fine grained diamond/Al composite bed of 30-35%, coarse diamond content are
The coarse diamond of 60-70%/Al composite bed, coarse diamond content are the coarse granule of 30-35%
Diamond/Al composite bed, fine grained diamond content be 60-70% fine grained diamond/Al composite bed,
Fine grained diamond content is the fine grained diamond/Al composite bed of 30-35%.
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| US20110316038A1 (en) * | 2009-02-12 | 2011-12-29 | Denki Kagaku Kogyo Kabushiki Kaisha | Substrate comprising aluminum/graphite composite, heat dissipation part comprising same, and led luminescent member |
| CN101723678A (en) * | 2009-12-14 | 2010-06-09 | 哈尔滨工业大学 | Method for preparing novel conductive ceramic evaporation boat by combustion synthesis |
| CN105483454A (en) * | 2015-12-28 | 2016-04-13 | 北京有色金属研究总院 | Manufacturing method of laminated aluminum matrix composite for electronic packaging |
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