CN105914268A - LED upside-down mounting process and LED upside-down mounting structure - Google Patents
LED upside-down mounting process and LED upside-down mounting structure Download PDFInfo
- Publication number
- CN105914268A CN105914268A CN201610367595.3A CN201610367595A CN105914268A CN 105914268 A CN105914268 A CN 105914268A CN 201610367595 A CN201610367595 A CN 201610367595A CN 105914268 A CN105914268 A CN 105914268A
- Authority
- CN
- China
- Prior art keywords
- led
- pad
- conductive adhesive
- anisotropic conductive
- baseplate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000000853 adhesive Substances 0.000 claims abstract description 32
- 230000001070 adhesive effect Effects 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000005476 soldering Methods 0.000 claims abstract description 5
- 238000011900 installation process Methods 0.000 claims description 19
- 239000003292 glue Substances 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 235000003392 Curcuma domestica Nutrition 0.000 claims description 3
- 244000008991 Curcuma longa Species 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 235000003373 curcuma longa Nutrition 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- 235000013976 turmeric Nutrition 0.000 claims description 3
- 238000000605 extraction Methods 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 5
- 230000005611 electricity Effects 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 2
- 206010010356 Congenital anomaly Diseases 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses an LED upside-down mounting process and an LED upside-down mounting structure. The LED upside-down mounting process comprises the steps of applying anisotropic conductive adhesive evenly to a pad of an LED substrate, placing an LED chip on the pad evenly coated with anisotropic conductive adhesive, and reflow-soldering the LED substrate to cure the anisotropic conductive adhesive. The anisotropic conductive adhesive is used as a die bonding material, which improves the light extraction efficiency of LEDs and prevents LEDs from being short-circuited and leaking electricity.
Description
Technical field
The present invention relates to LED encapsulation field, particularly relate to a kind of LED reverse installation process and inverted structure.
Background technology
LED illumination technology, through the development of decades, has been widely used, but LED
The bottleneck of heat dispersion always puzzlement LED development, particularly table on high-power LED product
Existing is especially apparent.And study and show, the most critical factor affecting LED heat dispersion is leading of LED
Heat.In order to solve LED Heat Conduction Problems, LED wafer technique is slowly tied by formal dress structural transition to upside-down mounting
Structure.And the die bond material of reverse installation process mainly has two kinds at present: tin cream and gold tin solder.
At present mainly to use tin cream to be encapsulated as main for reverse installation process, its composition based on SAC, heat conduction
Coefficient is about 50W/M K, although its low cost, but LED light extraction efficiency is the lowest, and has residue
With the congenital shortcoming in cavity, product is caused bigger potential safety hazard.Reverse installation process also has part to use
Gold-tin alloy encapsulates, and its advantage is that heatproof may be up to more than 280 degree so that LED can be with secondary back.
But gold tin-welding process cost is high, and LED light extraction efficiency is the most on the low side.Above two kinds of techniques, deposit the most simultaneously
A problem: product yield is on the low side and electrical leakage problems.
Summary of the invention
It is an object of the invention to provide a kind of LED reverse installation process and inverted structure, present invention seek to address that
LED light extraction efficiency is low and electrical leakage problems.
For reaching this purpose, the present invention by the following technical solutions:
A kind of LED reverse installation process, comprises the following steps:
Anisotropic conductive adhesive is spread evenly across on the pad of LED-baseplate；
LED wafer is placed in even spread have on the pad of anisotropic conductive adhesive；
Described LED-baseplate is crossed Reflow Soldering, so that described Anisotropically conductive adhesive curing.
Wherein, described anisotropic conductive adhesive is anisotropy conductiving glue.
Wherein, described LED-baseplate arranges independent circuits.
Wherein, described LED wafer is InGaN ternary flip chip.
Wherein, the P pole pad of described LED wafer is corresponding with the P pole pad of described substrate, described LED
The N pole pad of wafer is corresponding with the N pole pad of described substrate.
Wherein, described LED-baseplate includes: aluminium base, copper base and ceramic substrate.
Wherein, the technique of described pad includes electroplating technology, turmeric technique and tin spray process.
A kind of LED inverted structure, including:
LED-baseplate, described LED-baseplate is provided with pad；
Anisotropic conductive adhesive, is spread evenly across on the pad of described LED-baseplate；
LED wafer, being arranged at even spread has on the pad of anisotropic conductive adhesive.
Wherein, described anisotropic conductive adhesive is anisotropy conductiving glue.
Wherein, described LED wafer is InGaN ternary flip chip.
The invention have the benefit that and the invention provides a kind of LED reverse installation process and inverted structure.
This LED reverse installation process includes being spread evenly across on the pad of LED-baseplate anisotropic conductive adhesive；By LED
Wafer is placed in even spread to be had on the pad of anisotropic conductive adhesive；Described LED-baseplate is crossed Reflow Soldering,
So that described Anisotropically conductive adhesive curing.In the present invention, die bond material uses anisotropic conductive adhesive, improves LED
Light extraction efficiency, can prevent LED wafer short circuit from leaking electricity.
Accompanying drawing explanation
Fig. 1 is the process chart of a kind of LED reverse installation process that the specific embodiment of the invention provides.
Detailed description of the invention
Further illustrate technical scheme below in conjunction with the accompanying drawings and by detailed description of the invention.
As it is shown in figure 1, the present embodiment provides a kind of LED reverse installation process, comprise the following steps:
Step S101, is spread evenly across anisotropic conductive adhesive on the pad of LED-baseplate.
In the present embodiment, described anisotropic conductive adhesive is anisotropy conductiving glue.Use anisotropic conductive adhesive as
Die bond material, can promote the light extraction efficiency of 5-10%, and can stop residue and cavity problem.
And can effectively prevent LED wafer short circuit electrical leakage problems, great improving product yield.
Step S102, LED wafer is placed in even spread to be had on the pad of anisotropic conductive adhesive.
In the present embodiment, described LED wafer is InGaN ternary flip chip.The P of described LED wafer
Pole pad is corresponding with the P pole pad of described substrate, the N pole pad of described LED wafer and described substrate
N pole pad is corresponding.
Step S103, crosses Reflow Soldering by described LED-baseplate, so that described Anisotropically conductive adhesive curing.
In the present embodiment, described LED-baseplate arranges independent circuits, to improve the reliability of product.Described
LED-baseplate includes: aluminium base, copper base and ceramic substrate.
In the present embodiment, the technique of described pad includes electroplating technology, turmeric technique and tin spray process.
The present embodiment provides a kind of LED reverse installation process, and in the process, die bond material uses Anisotropically conductive
Glue so that the light extraction efficiency of LED improves 5-10%, noresidue, will not secondary pollution, stop
Cavity problem, heat conduction is more efficient, can prevent the problem that LED wafer short circuit is leaked electricity.
Following example provide a kind of LED inverted structure, including:
LED-baseplate, described LED-baseplate is provided with pad；
Anisotropic conductive adhesive, is spread evenly across on the pad of described LED-baseplate；
LED wafer, being arranged at even spread has on the pad of anisotropic conductive adhesive.
In the present embodiment, described anisotropic conductive adhesive is anisotropy conductiving glue.Described LED wafer is InGaN
Ternary flip chip.
The present embodiment provides a kind of LED inverted structure, and this structure includes LED-baseplate, anisotropic conductive adhesive,
LED wafer, wherein, anisotropic conductive adhesive uses anisotropy elargol so that the light extraction efficiency of LED improves,
Can prevent LED wafer short circuit from leaking electricity.
The know-why of the present invention is described above in association with specific embodiment.These describe and are intended merely to explain
The principle of the present invention, and limiting the scope of the invention can not be construed to by any way.Based on this
The explanation at place, those skilled in the art need not pay performing creative labour can associate the present invention's
Other detailed description of the invention, within these modes fall within protection scope of the present invention.
Claims (10)
1. a LED reverse installation process, it is characterised in that comprise the following steps:
Anisotropic conductive adhesive is spread evenly across on the pad of LED-baseplate；
LED wafer is placed in even spread have on the pad of anisotropic conductive adhesive；
Described LED-baseplate is crossed Reflow Soldering, so that described Anisotropically conductive adhesive curing.
LED reverse installation process the most according to claim 1, it is characterised in that described anisotropic conductive adhesive
For anisotropy conductiving glue.
LED reverse installation process the most according to claim 1, it is characterised in that described LED-baseplate sets
Put independent circuits.
LED reverse installation process the most according to claim 1, it is characterised in that described LED wafer is
InGaN ternary flip chip.
LED reverse installation process the most according to claim 1, it is characterised in that described LED wafer
P pole pad is corresponding with the P pole pad of described substrate, the N pole pad of described LED wafer and described substrate
N pole pad corresponding.
LED reverse installation process the most according to claim 1, it is characterised in that described LED-baseplate bag
Include: aluminium base, copper base and ceramic substrate.
LED reverse installation process the most according to claim 1, it is characterised in that the technique of described pad
Including electroplating technology, turmeric technique and tin spray process.
8. a LED inverted structure, it is characterised in that including:
LED-baseplate, described LED-baseplate is provided with pad；
Anisotropic conductive adhesive, is spread evenly across on the pad of described LED-baseplate；
LED wafer, being arranged at even spread has on the pad of anisotropic conductive adhesive.
LED inverted structure the most according to claim 8, it is characterised in that described anisotropic conductive adhesive
For anisotropy conductiving glue.
LED inverted structure the most according to claim 8, it is characterised in that described LED wafer
For InGaN ternary flip chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610367595.3A CN105914268A (en) | 2016-05-30 | 2016-05-30 | LED upside-down mounting process and LED upside-down mounting structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610367595.3A CN105914268A (en) | 2016-05-30 | 2016-05-30 | LED upside-down mounting process and LED upside-down mounting structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105914268A true CN105914268A (en) | 2016-08-31 |
Family
ID=56741619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610367595.3A Pending CN105914268A (en) | 2016-05-30 | 2016-05-30 | LED upside-down mounting process and LED upside-down mounting structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105914268A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107248539A (en) * | 2017-04-28 | 2017-10-13 | 厦门市三安光电科技有限公司 | A kind of LED packaging technologies |
| CN110880544A (en) * | 2018-09-06 | 2020-03-13 | 深圳市斯迈得半导体有限公司 | Chip for glass substrate and manufacturing method thereof |
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|---|---|---|---|---|
| CN1599084A (en) * | 2003-09-15 | 2005-03-23 | 光宝科技股份有限公司 | Crystal solidifying method of light-emitting diode |
| CN101295754A (en) * | 2007-04-26 | 2008-10-29 | 亿光电子工业股份有限公司 | Flip-chip soldering encapsulation structure and method for light emitting diode |
| KR20100038937A (en) * | 2008-10-07 | 2010-04-15 | 삼성엘이디 주식회사 | Light emitting deving package |
| CN102709438A (en) * | 2012-03-22 | 2012-10-03 | 浙江英特来光电科技有限公司 | Wireless packaging structure of high-power ceramic LED (Light-emitting Diode) |
| CN204675827U (en) * | 2015-05-25 | 2015-09-30 | 歌尔声学股份有限公司 | A kind of encapsulating structure of chip |
-
2016
- 2016-05-30 CN CN201610367595.3A patent/CN105914268A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1599084A (en) * | 2003-09-15 | 2005-03-23 | 光宝科技股份有限公司 | Crystal solidifying method of light-emitting diode |
| CN101295754A (en) * | 2007-04-26 | 2008-10-29 | 亿光电子工业股份有限公司 | Flip-chip soldering encapsulation structure and method for light emitting diode |
| KR20100038937A (en) * | 2008-10-07 | 2010-04-15 | 삼성엘이디 주식회사 | Light emitting deving package |
| CN102709438A (en) * | 2012-03-22 | 2012-10-03 | 浙江英特来光电科技有限公司 | Wireless packaging structure of high-power ceramic LED (Light-emitting Diode) |
| CN204675827U (en) * | 2015-05-25 | 2015-09-30 | 歌尔声学股份有限公司 | A kind of encapsulating structure of chip |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107248539A (en) * | 2017-04-28 | 2017-10-13 | 厦门市三安光电科技有限公司 | A kind of LED packaging technologies |
| CN107248539B (en) * | 2017-04-28 | 2020-02-07 | 厦门市三安光电科技有限公司 | LED packaging process |
| CN110880544A (en) * | 2018-09-06 | 2020-03-13 | 深圳市斯迈得半导体有限公司 | Chip for glass substrate and manufacturing method thereof |
| CN110880544B (en) * | 2018-09-06 | 2021-09-03 | 深圳市斯迈得半导体有限公司 | Chip for glass substrate and manufacturing method thereof |
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| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160831 |