CN105908222A - Preparation method of precise chip metal mold with low cost and high utilization rate - Google Patents
Preparation method of precise chip metal mold with low cost and high utilization rate Download PDFInfo
- Publication number
- CN105908222A CN105908222A CN201610283113.6A CN201610283113A CN105908222A CN 105908222 A CN105908222 A CN 105908222A CN 201610283113 A CN201610283113 A CN 201610283113A CN 105908222 A CN105908222 A CN 105908222A
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- Prior art keywords
- photoresist
- preparation
- substrate
- plating
- low cost
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Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
- C25D5/52—After-treatment of electroplated surfaces by brightening or burnishing
Abstract
The invention relates to a preparation method of a precise chip metal mold with low cost and high utilization rate. The preparation method comprises the following steps: (S1) a layer of photoresist is coated on a substrate, and is exposed and developed; (S2) the pre-plating, electroplating and after-plating treatment is performed for the substrate in the step (S1); and (S3) the photoresist on the substrate in the step (S2) is removed. The method, provided by the invention, is simple and feasible in manufacturing process and short in machining period; the prepared precise chip metal mold is long in service life; and in particular, the method is suitable for the requirements of such precise chip batch production processes as hot pressing and injection molding on precise molds.
Description
Technical field
The present invention relates to the manufacture technology field of accurate chip metal mould, be specifically related to a kind of low cost, the preparation method of high usage precision chip metal mould.
Background technology
Accurate chip be prepared by involved sample in the field such as chemical or biological, react, separate, check, the basic operation unit such as cell is cultivated, sort, cracking is integrated on one piece of chip the least, utilize microchannel network that the fluid of whole system is controlled, thus realize the various functions of conventional chemical or biology laboratory.
The processing method of current polymer precision chip, is broadly divided into direct processing method (not using mould) and indirect processing method (use mould).Directly processing method, such as: use lucite as the material of accurate chip, use laser instrument direct processing precise chip on lucite；But the method is only applicable to the production of prototype hardware, because laser can destroy the shape of microchannel surface, precision is the highest, and the production cycle is long, is not suitable for producing in enormous quantities.Processing method indirectly, as: indirect preparation method based on mould duplication is the processing method of present topmost organic high molecular polymer chip, this method is particularly suitable for the batch of polymer precision chip and prepares, and therefore indirect processing method based on mould has important position in the industrialization of accurate chip.
Silicon, glass, photoresist etc. are mainly included for preparing the mold materials of accurate chip.Wherein, using semiconductor silicon as the mold materials of accurate chip, this process route is essentially identical with the microfabrication of more ripe quasiconductor and IC chip, but its processing cost is higher, and silicon materials are more crisp so that the more difficult popularization and application of silicon mould.Use glass as mold materials, although cost is relatively low, but glass is difficult to be adapted to the requirement of the high-volume chip production process such as injection mo(u)lding, hot compression molding as fragile material.Use cast shaping process based on SU-8 type photoresist mould, the accurate chip of the elastic polymer materials such as PDMS can be prepared, but the method is only adapted to test scientific research, it is impossible to be used for producing in enormous quantities.
For above-mentioned accurate chip production process technical barrier, still need to study a kind of low cost, the preparation method of high usage precision chip metal mould.
Summary of the invention
It is an object of the invention to overcome the deficiencies in the prior art, a kind of low cost, the preparation method of high usage precision chip metal mould are provided, the method processing technology that the present invention provides is simple, the process-cycle is short, the accurate chip metal mold use life-span prepared is long, is particularly suitable for the accurate chip batch production technology requirement to precision die such as hot pressing, injection.
Another object of the present invention is to low cost, the high usage precision chip metal mould providing said method to prepare.
For achieving the above object, the present invention adopts the following technical scheme that
A kind of low cost, the preparation method of high usage precision chip metal mould, described preparation method comprises the steps:
S1: coat a layer photoetching glue on substrate, then photoresist is exposed, develops；
S2: before the substrate in step S1 is plated, plating, plating posttreatment；
S3: the photoresist on substrate described in removal step S2.
In the present invention, described photoresist can be positive photoresist or negative photoresist；Preferably, described photoresist is positive photoresist.It is further preferable that described photoresist is commercially available PR-2000SA series of positive photoresist.
Preferably, described exposed and developed include: photoresist is carried out front baking process；Photoresist after processing front baking by mask plate is exposed；Photoresist after exposure is developed；Photoresist after development is carried out after bake process.
Preferably, described front baking processes and includes: the substrate of coating photoresist is placed on soft baking 10～15min in the horizontal hot plate of 70～80 DEG C；Then natural coagulation more than 10 hours under room temperature.
Preferably, described exposure includes: after being close on a photoresist by the mask plate with microchannel pattern, expose under ultraviolet light；Described development includes: is put in sodium carbonate liquor by the substrate being coated with photoresist after exposure and develops.
Preferably, described after bake processes and includes: the substrate after development toasts under the conditions of 65 DEG C 10min, then toasts 10min at 130 DEG C.
Preferably, described treatment before plating is chemical attack process or physical etch process；It is that hydrochloric acid or ferric chloride etc. carry out chemical etching technology that described chemical attack is processed as using mass concentration；Described physical etch is processed as using the physical etch techniques such as plasma sputtering.
Preferably, described electroplating processes includes: use the electroplating technologies such as nickel plating, copper facing, chromium plating；The technique of described nickel plating is: use the electrolyte solution L of nickel sulfamic acid 400g/L, Nickel dichloride. 15g/L, boric acid 35g/L, dodecyl sodium sulfate 0.09g/, at temperature 48 DEG C, pH value 4 ± 0.2 times, uses electric current density 1 to 3A/dm2Electroplating operations.
Preferably, described plating posttreatment technique can use mechanical polishing planarization to process.In the present invention, described plating posttreatment includes: first polishes 5 minutes with 1200 mesh waterproof abrasive papers, then polishes 10 minutes with 2000 mesh waterproof abrasive papers, uses 3000 mesh waterproof abrasive papers instead and polishes 15 minutes, finally polishes 20 minutes with 5000 mesh waterproof abrasive papers.
Preferably, remove photoresist described in step S3 to include: the accurate chip metal mould after polishing is put into ultrasonic cleaning more than 10 minutes in sodium hydroxide solution；Preferably, the mass concentration of described sodium hydroxide solution is 5%.
In the present invention, described substrate can be the metal material of the polishings such as latten(-tin), copper sheet, stainless steel substrates, nickel sheet.Preferably, described baseplate material is the latten(-tin) of polishing.
Preferably, the thickness of described substrate is 3～5mm.
Low cost that above-mentioned preparation method prepares, high usage precision chip metal mould.
Compared with prior art, there is advantages that
The present invention provides based on photoetching, electroplate, the preparation method of the accurate chip metal mould of the technology such as mechanical polishing can prepare low cost within a short period of time, high-quality, the metal die of high usage (the repeated multiple times injection for chip or mold produce), solves the problems such as existing accurate chip metal mould preparation cost is high, die life is short.The method that the present invention provides has that low processing cost, process-cycle be short, the advantage of die life length, and processing technology is simple, mold material is hard, it is particularly suitable for the accurate chip batch production technology requirement to precision die such as hot pressing, injection, high-volume low cost can be realized and prepare the accurate chip of thermoplastic, be adapted to the production of different chip material such as PMMA, PC, PET, POM etc..
Accompanying drawing explanation
Fig. 1 is the process chart of the accurate chip metal mould preparation method that embodiment 1 provides；
Fig. 2 A to Fig. 2 G is the operating process schematic diagram of accurate chip metal mould preparation method in embodiment 1；
Fig. 3 is the schematic diagram of a kind of accurate chip metal mould that embodiment 1 prepares.
Detailed description of the invention
It is further elaborated on the present invention below in conjunction with Figure of description and specific embodiment.Following example of the present invention are the present invention preferably embodiment; the present invention mainly illustrates described bacterial strain and application thought based on described bacterial strain; in embodiment, the replacement of simple parameter can not repeat the most in an embodiment; but the most therefore limit the scope of the invention; the change made under other any spirit without departing from the present invention and principle, modify, substitute, combine, simplify; the substitute mode of equivalence should be considered, within being included in protection scope of the present invention.
Embodiment
1
Present embodiments provide the preparation method of the accurate chip metal mould of a kind of low cost, high usage.
As it is shown in figure 1, the method includes that steps S102 is to step S112:
Step S102, covers photoresist on substrate.
Step S104, is exposed photoresist and develops；Photoresist is exposed and develops by the mask plate that can utilize predetermined pattern.
Step S106, exposed and developed after, substrate is carried out treatment before plating；Treatment before plating can use the method for chemially etching such as hydrochloric acid, ferric chloride.
Step S108, after treatment before plating, carries out electroplating processes to substrate；Plated metal can be nickel, copper, chromium etc..
Step S110, after electroplating processes, carries out plating posttreatment；Plating posttreatment uses mechanical polishing to process.
Step S112, removes photoresist, directly obtains metal die.
In the present invention, by coating photoresist on substrate, and after exposure and development, substrate is carried out electroplating processes, after through a series of plating posttreatment techniques, it is possible to obtain the accurate chip metal mould of high usage.
Fig. 2 A to Fig. 2 G is the schematic flow sheet of the preparation method of the accurate chip metal mould according to the present embodiment offer.Comprise the following steps:
As shown in Figure 2 A, photoresist 12 is coated on the substrate 10.In the present embodiment, the thickness of described substrate is 3～5mm, and described photoresist is commercially available PR-2000SA photoresist, and the coating thickness of described photoresist is 100 microns.
As shown in Figure 2 B, photoresist 12 covers mask plate 14, then photoresist 12 is carried out ultraviolet 16 exposure-processed.
As shown in Figure 2 C, developing the photoresist 18 after exposure, thus removed by the photoresist 18 after exposure, obtain the photoresist 20 of residual, the photoresist 20 of residual constitutes predetermined pattern, thus obtains structure as that shown in fig. 2 c.Photoresist is exposed and development includes: photoresist is carried out front baking process；Photoresist after processing front baking is exposed；Photoresist after exposure is carried out after bake process；Photoresist after processing after bake develops.
Above-mentioned front baking processes and may include that the substrate being coated with photoresist is placed in the hot plate being in 70 DEG C heating 10min；The substrate being coated with photoresist is placed in dry room temperature environment until photoresist complete stability.
Above-mentioned after bake processes the substrate after may include that development and toasts 10min under the conditions of 65 DEG C, then toasts 10min at 130 DEG C..
As shown in Figure 2 D, the structure obtaining Fig. 2 C carries out treatment before plating, and treatment before plating can use the FeCl of 5%3Solution etches 2 minutes under temperature 45 C, is not photo-etched the substrate 10 that glue 20 covered and is etched and obtains substrate 22.
As shown in Figure 2 E, the structure obtained Fig. 2 D carries out electroplating processes, it can be seen that substrate 22 the most covered by photoresist metal during plating is grown into, thus forms pattern in the side of substrate 22, and is plane at the opposite side of substrate 22.
As shown in Figure 2 F, after electroplating processes, coated metal 24 is carried out mechanical polishing process, obtain smooth metal level 26, thus obtain the metal die surface of flat-satin.
As shown in Figure 2 G, after mechanical polishing processes, remove the photoresist 20 of residual on substrate 22, thus obtain metal die.
In the present embodiment, before substrate covers photoresist, substrate is carried out, first rinses with commercial detergent, then with acetone ultrasonic middle cleaning 2 minutes, finally use deionized water rinsing.
For example, it is possible to software design precision chip design mask plates such as Coreldraw.In experiment, the latten(-tin) of 3 millimeters thick is spun on 100 microns of thick PR-2000SA positive photoresists, during front baking, the latten(-tin) being coated with photoresist is firstly placed at 20min in the hot plate that temperature is 70 DEG C of a level, is then placed in dry room temperature environment more than 10 hours.After front baking terminates, after being close on a photoresist by the mask plate with microchannel pattern, being exposed, exposure power is 810mJ/cm2.Time of exposure is at 120s～160s.Then with the sodium carbonate liquor of 1%, the photoresist after exposure is developed.Then carry out after bake, in 65 DEG C, first toast 10min, at 130 DEG C, then toast 10min.
Front baking puts mask exposure development after bake
Then the substrate after development is done treatment before plating, it is preferable that putting into etch 3 to 5 minutes in the hydrochloric acid solution of 5%, taking-up deionized water cleans.
Then substrate is put in sulfamate nickel electrolytic liquid and electroplate, preferably, use nickel sulfamic acid 400g/L, Nickel dichloride. 15g/L, boric acid 35g/L, the electrolyte solution of dodecyl sodium sulfate 0.09g/L, its mesoboric acid plays pH value cushioning effect, the pH value preventing interface raises suddenly, can prevent be partially formed oxide or hydroxide, especially in micropore cavity configuration, dodecyl sodium sulfate can improve the surface tension condition in micropore chamber, making coating evenly, Nickel dichloride. can improve the rate of dissolution of anode nickel plates.Plating is at 48 DEG C, and pH value is 4 ± 0.2, and electric current density is 1～3A/dm2Under conditions of carry out, less to obtain internal stress, thickness of coating metal die evenly.
Plating posttreatment: metal die after plating is carried out mechanically polishing planarization and processes, obtain the die surface of smooth planar.Specifically, above-mentioned mechanical polishing process, first polish 5 minutes with 1200 mesh waterproof abrasive papers, then polish 10 minutes with 2000 mesh waterproof abrasive papers, use 3000 mesh waterproof abrasive papers instead and polish 15 minutes, finally polish 20 minutes with 5000 mesh waterproof abrasive papers.
Finally the metal die mechanically polished is put into ultrasonic cleaning more than 5 minutes in the sodium hydroxide solution of 5%, removes photoresist, it is thus achieved that accurate chip metal mould.
Fig. 3 is the schematic diagram of a kind of accurate chip metal mould that the preparation method provided according to the present embodiment prepares.
As it is shown on figure 3, have the pattern model of four accurate chips on this precision chip metal mould, thus, when this mould is carried out hot moulding or injection mo(u)lding, can once obtain four accurate chips.Wherein it is possible to according to the size of required accurate chip, a chip metal mould arranges the pattern model of the accurate chip of different number.
Above-mentioned based on photoetching, electroplate, the manufacturing process that mechanically polishes is when manufacturing the accurate chip metal mould of high usage: (1) chip microchannel degree of depth can be between 60～150 microns, width can be between 20 to 300 microns, passage pulls out film angle and is less than 3 degree, and passage flatness is less than ± 6 microns.(2) time processing at least four precision chip can be realized.
It can be seen from the above description that the present invention can utilize simply, the technique of low cost prepares the accurate chip metal mould of high usage, well solve a process technology difficult problem for accurate chip, have important scientific research and application value.
Claims (10)
1. a low cost, the preparation method of high usage precision chip metal mould, it is characterised in that described preparation method comprises the steps:
S1: coat a layer photoetching glue on substrate, then photoresist is exposed, develops；
S2: before the substrate in step S1 is plated, plating, plating posttreatment；
S3: the photoresist on substrate described in removal step S2.
Preparation method the most according to claim 1, it is characterised in that described photoresist is positive photoresist.
Preparation method the most according to claim 2, it is characterised in that described photoresist is commercially available PR-2000SA series of positive photoresist.
Preparation method the most according to claim 1, it is characterised in that described exposed and developed include: photoresist is carried out front baking process；Photoresist after processing front baking by mask plate is exposed；Photoresist after exposure is developed；Photoresist after development is carried out after bake process.
Preparation method the most according to claim 4, it is characterised in that described front baking processes and includes: the substrate of coating photoresist is placed on soft baking 10～15min in the horizontal hot plate of 70～80 DEG C；Then natural coagulation more than 10 hours under room temperature.
Preparation method the most according to claim 1, it is characterised in that described exposure includes: after the mask plate with microchannel pattern is close on a photoresist, expose under ultraviolet light；Described development includes: is put in alkaline solution by the substrate being coated with photoresist after exposure and develops.
Preparation method the most according to claim 1, it is characterised in that described after bake processes and includes: the substrate after development is toasted under the conditions of 65 DEG C 10min, then toasts 10min at 130 DEG C.
Preparation method the most according to claim 1, it is characterised in that described treatment before plating is chemical attack process or physical etch process.
Preparation method the most according to claim 1, it is characterised in that described plating posttreatment processes for mechanical polishing planarization.
10. preparation method described in claim 1～9 prepares low cost, high usage precision chip metal mould.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610283113.6A CN105908222A (en) | 2016-05-03 | 2016-05-03 | Preparation method of precise chip metal mold with low cost and high utilization rate |
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| CN201610283113.6A CN105908222A (en) | 2016-05-03 | 2016-05-03 | Preparation method of precise chip metal mold with low cost and high utilization rate |
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| CN201610283113.6A Pending CN105908222A (en) | 2016-05-03 | 2016-05-03 | Preparation method of precise chip metal mold with low cost and high utilization rate |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107177867A (en) * | 2017-05-08 | 2017-09-19 | 南京航空航天大学 | Crack the layering electrocasting method of rectangular waveguide |
| CN110923714A (en) * | 2019-09-26 | 2020-03-27 | 宁波福至新材料有限公司 | Etching solution and etching method for titanium foil micropore pattern |
| CN110962258A (en) * | 2019-12-10 | 2020-04-07 | 维沃移动通信有限公司 | Manufacturing method of injection mold, processing equipment of shell and shell of electronic equipment |
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2016
- 2016-05-03 CN CN201610283113.6A patent/CN105908222A/en active Pending
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107177867A (en) * | 2017-05-08 | 2017-09-19 | 南京航空航天大学 | Crack the layering electrocasting method of rectangular waveguide |
| CN107177867B (en) * | 2017-05-08 | 2019-01-11 | 南京航空航天大学 | Crack the layering electrocasting method of rectangular waveguide |
| CN110923714A (en) * | 2019-09-26 | 2020-03-27 | 宁波福至新材料有限公司 | Etching solution and etching method for titanium foil micropore pattern |
| CN110962258A (en) * | 2019-12-10 | 2020-04-07 | 维沃移动通信有限公司 | Manufacturing method of injection mold, processing equipment of shell and shell of electronic equipment |
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