CN105897199B - Multi-pass band Designing power amplifier method - Google Patents
Multi-pass band Designing power amplifier method Download PDFInfo
- Publication number
- CN105897199B CN105897199B CN201610201061.3A CN201610201061A CN105897199B CN 105897199 B CN105897199 B CN 105897199B CN 201610201061 A CN201610201061 A CN 201610201061A CN 105897199 B CN105897199 B CN 105897199B
- Authority
- CN
- China
- Prior art keywords
- amplifier
- triple
- band
- frequency
- phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
- H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
- H03F1/486—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers with IC amplifier blocks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Abstract
Multi-pass band Designing power amplifier method, specifically: obtain amplifier amplification efficiency matched with fundamental wave, second harmonic and triple-frequency harmonics between relationship；Under the conditions of low pass matching network, efficiency of amplitude is obtained with second harmonic phase and triple-frequency harmonics phase change relationship；Obtain amplifier high efficient design space；Under the conditions of low pass matching network, adjust output matching circuit, so that second harmonic phase and triple-frequency harmonics phase are in amplifier high efficient design space when N number of working band output matching, and the intermediate frequency band of adjacent two working bands exports second harmonic phase and triple-frequency harmonics phase when matching and is in outside amplifier high efficient design space.Method in the present invention enormously simplifies the difficulty of output matching of power amplifier, with great Project Realization, it does not need to be realized with extremely more minor matters matchings, reduce ghost effect, simplify planned network, it is able to achieve excellent performance, the alternative complicated multiband power amplifier design method of tradition.
Description
Technical field
The invention belongs to microwave components design fields, and in particular to a kind of multi-pass band Designing power amplifier method, especially
Be it is a kind of utilize low pass matching network carry out multi-pass band Designing power amplifier method.
Background technique
The power consumption of modern wireless communication systems depends primarily on the efficiency of power-amplifier stage.Traditional is higher than 70%
The power amplifier mode of efficiency depends primarily on output end accurately higher hamonic wave reflexless terminal.In narrowband systems, F class function
Rate amplifier is great representative one kind.
Even to this day, Modern wireless communication terminal needs to cover multiple frequency ranges using a single hardware, and broadband connects
What the demand of receipts machine and multi-pass with transmitter became is increasingly urgent to.As above described in section, the high efficiency amplifier of double frequency-band or multiband
Circuit often means that bigger challenge.Because necessary not only for suitable fundamental wave load transfer is realized on each frequency band,
It is also required to suitable high-order harmonic wave impedance termination.This often leads to match extremely complex, even cannot achieve at all.
By taking the efficient F power-like amplifier of three frequency bands as an example, traditional design method needs to realize accurate of 9 frequency points
Match, if considering amplitude and phase simultaneously, variable in need of consideration up to 18.Output matching complicated in this way is set in reality
It is almost uncontrollable in meter.This is not only since it is desired that matched frequency point is more, also because the matching of each frequency point influences each other,
Cause final result always unsatisfactory.
Summary of the invention
Technology of the invention solves the problems, such as: having overcome the deficiencies of the prior art and provide a kind of multi-pass band power amplifier
Design method, first acquisition amplifier amplification efficiency matched with fundamental wave, second harmonic and triple-frequency harmonics between relationship, and pass through
The low-pass network most easily realized in engineering matches amplifier, and the factor that will affect efficiency is reduced to second harmonic reflection system
The phase of several phase and triple-frequency harmonics reflection coefficient.So as to simple low-pass network should be used, come so that amplifier
The relevant parameter of working band falls in high efficiency space, and the frequency band between operated adjacent frequency band is in inefficient space.This hair
Multi-pass in bright enormously simplifies the difficulty of output matching of power amplifier with Designing power amplifier method, has great work
Journey is realisation, does not need to be realized with extremely more minor matters matchings, reduces ghost effect, simplify planned network, be able to achieve excellent
Good performance, the alternative complicated multiband power amplifier design method of tradition.
The technical solution of the invention is as follows: multi-pass band Designing power amplifier method, and the amplifier includes the work of N item
Frequency band, comprising:
Power amplifier is emulated, amplifier amplification efficiency is obtained and is matched with fundamental wave, second harmonic and triple-frequency harmonics
Between relationship the step of；
Under the conditions of low pass matching network, efficiency of amplitude is obtained with second harmonic phase and triple-frequency harmonics phase change relationship
The step of；
The step of obtaining amplifier high efficient design space, the high efficient design space are efficiency of amplitude greater than default
Second harmonic phase and triple-frequency harmonics phase value range when threshold value；
Under the conditions of low pass matching network, output matching circuit is adjusted, so that working band when N working band output matching
Interior second harmonic phase and triple-frequency harmonics phase is in amplifier high efficient design space, and two neighboring working band
Second harmonic phase and triple-frequency harmonics phase are in the step outside amplifier high efficient design space when intermediate frequency band output matching.
The power amplifier is basic mode with F power-like amplifier mode.
The efficiency preset threshold is according to selected transistor, working frequency range different set, value range are as follows: 30%-
80%.
The intermediate frequency band of adjacent two working bands specifically: the centre of adjacent two working band respective frequencies
Value.
Compared with the prior art, the invention has the advantages that:
Method in the present invention replaces enormously simplifying function in the past by the matching of frequency band using simple low pass matching network
Rate amplifier exports matched difficulty, has great Project Realization, does not need to be realized with extremely more minor matters matchings, reduce
Ghost effect, simplifies planned network, is able to achieve excellent performance, the alternative complicated multiband power amplifier design of tradition
Method.
Detailed description of the invention
Fig. 1 is impedance of fundamental frequency design space of the present invention；
Fig. 2 is second harmonic impedance design of the present invention space；
Fig. 3 is triple-frequency harmonics impedance termination of the present invention design space；
Fig. 4 is the method for the present invention flow chart；
The secondary and triple-frequency harmonics impedance design space of the present invention Fig. 5 (based on low pass matching topology)；
Fig. 6 is the load matching network structure of mentality of designing of the present invention in specific embodiment；
Fig. 7 is the Smith circle diagram signal of matching impedance characteristic in three frequency bands of mentality of designing of the present invention in specific embodiment
Figure；
Fig. 8 is the amplification efficiency signal of matching impedance characteristic in three frequency bands of mentality of designing of the present invention in specific embodiment
Figure；
Fig. 9 is the Smith of the Region Matching impedance operator in specific embodiment between three frequency bands of mentality of designing of the present invention
Circle diagram schematic diagram；
Figure 10 is the efficiency of the Region Matching impedance operator in specific embodiment between three frequency bands of mentality of designing of the present invention
Schematic diagram.
Specific embodiment
In order to which the technical problems, technical solutions and beneficial effects solved by the present invention is more clearly understood, below in conjunction with
Accompanying drawings and embodiments, the present invention will be described in further detail, it should be understood that specific embodiment described herein is only used
To explain the present invention, it is not intended to limit the present invention.
Output matching is illustrated by taking three frequency band F power-like amplifiers as an example:
Ideal F quasi-mode, fundamental wave best match impedance are selected as Ropt, by RoptIt is secondary as the real part of impedance of fundamental frequency
It is respectively short circuit and open circuit with triple-frequency harmonics impedance termination.Its fundamental wave, second harmonic and triple-frequency harmonics are divided respectively below
Analysis.
Firstly, impedance of fundamental frequency considers that it has a reactive element, as shown in formula (1):
Zf0=Ropt-Xf0 (1)
Wherein: -45Ohm < Xf0<45Ohm.Wherein, Zf0For impedance of fundamental frequency, Xf0For the imaginary part of impedance of fundamental frequency.
At this point, second harmonic terminal remains short circuit, triple-frequency harmonics terminal remains open circuit.Fig. 1 gives amplifier effect
The characteristic that rate changes with reactive component.As shown in Figure 1, as -30Ohm < Xf0When < 30Ohm, efficiency is able to maintain 70% or more,
This is considered as minimum acceptable simulation efficiency in the frequency range of the present embodiment.
The high efficient design space of second harmonic impedance also should can be obtained in the same way.To second harmonic impedance, no
It only analyzes it to open a way along Smith circle diagram edge variation from being shorted to, then returns to the situation of short circuit from another side, it is also considered that
The case where characteristic of the Secondary Match impedance inside Smith circle diagram includes some resistive compositions.Second harmonic impedance exists
Variation on Smith circle diagram can be indicated by formula (2):
S11(2f0)=δ2f0·(cosθ2f0+jsinθ2f0) (2)
Wherein S11(2f0)For the reflection coefficient of second harmonic impedance, δ2f0For the width of second harmonic impedance matching reflection coefficient
Value, θ2f0For the phase of second harmonic reflection coefficient, wherein 0.5 < δ2f0<1.Formula (2) means second harmonic terminal impedance Z2f0
Are as follows:
In -180 ° < θ < 180 ° and 0.5 < δ2f0The efficiency characteristic of power amplifier is analyzed in the range of < 1, as shown in Figure 2.
Work as δ2f0When=1, if second harmonic impedance is able to maintain in the range of 100 ° < θ < 260 ° are spent, efficiency is higher than 70%.But
It is that, when considering the resistive compositions in second harmonic impedance, this range can become fairly small, such as work as δ2f0=0.5
When, maximal efficiency only has 71.8%, and the efficiency section higher than 70% is by δ2f0100 ° < θ < 260 ° when=1 are reduced to 130 °
<θ<210°.So the resistive for three band power amplifiers (or multiband power amplifier), in second harmonic
Ingredient should avoid as far as possible, so that it is guaranteed that can obtain more design spaces on Smith circle diagram.
Identical with the analysis of second harmonic impedance termination, influence of the triple-frequency harmonics impedance termination to efficiency can also extract,
As a result as shown in Figure 3.Triple-frequency harmonics impedance variations is defined as:
S11(3f0)=δ3f0·(cosθ3f0+jsinθ3f0) (4)
Wherein S11(3f0)For triple-frequency harmonics impedance reflection coefficient, δ3f0For the amplitude of triple-frequency harmonics impedance matching reflection coefficient,
θ3f0For the phase of triple-frequency harmonics reflection coefficient, -180 ° < θ < 180 °, 0.5 < δ3f0<1。
Triple-frequency harmonics high efficient design space shown in Fig. 3 is greater than the range of second harmonic terminal, most of
Range, simulation efficiency are able to maintain higher than 70%.This means that being matched for the multiband power amplifier based on F class, two
Subharmonic impedance termination should be restricted to approach the region of short circuit as far as possible, and in contrast the range of triple-frequency harmonics impedance termination then may be used
With more flexible.
Based on the above analysis, the invention proposes a kind of multi-pass band Designing power amplifier methods, and the amplifier includes N
Working band, flow chart is as shown in figure 4, specifically include:
Power amplifier is emulated, amplifier amplification efficiency is obtained and is matched with fundamental wave, second harmonic and triple-frequency harmonics
Between relationship step 101, the relationship is specifically as shown in FIG. 1 to 3；
Under the conditions of low pass matching network, efficiency of amplitude is obtained with second harmonic phase and triple-frequency harmonics phase change relationship
Step 102；
From the point of view of we itself matched design experience, low pass matching network is relatively easy to realize.That is, it is secondary and
Triple-frequency harmonics impedance termination is easily achieved the edge for falling in Smith circle diagram, but is difficult to navigate on specific matching point.This meaning
Taste δ2f0> 0.9 and δ3f0> 0.9 is not to be extremely difficult to (why be greater than 0.9 rather than be equal to 1 and allow for matching network needs
Cover multiple frequency ranges, and general matching microstrip line Q value can't be too high, thus a certain amount of reactive element is secondary and three
It is inevitable in subharmonic impedance matching).Based on this it is assumed that secondary and triple-frequency harmonics impedance phase is for actually setting
The meaning of meter then becomes apparent.
The variation relation is based on as shown in figure 5, Fig. 5 summarizes secondary and influence of the triple-frequency harmonics phase for efficiency
Low pass matching network, when the variation of secondary and triple-frequency harmonics phase matched, the situation of change of efficiency of amplitude.Wherein, abscissa 0
~360 degree of variations are the matched reflection coefficient phase variation of second harmonic, and abscissa -180~180 degree variation is triple-frequency harmonics
The reflection coefficient phase variation matched.As can be seen from Figure 5, it when secondary and triple-frequency harmonics phase is changed in value range, puts
There is apparent layering in big device efficiency, shows secondary and triple-frequency harmonics impedance matching reflection coefficient phase and efficiency of amplitude
Between there is available relationships.
The step of obtaining amplifier high efficient design space, the high efficient design space are efficiency of amplitude greater than default
Second harmonic phase and triple-frequency harmonics phase value range 103 when threshold value；
As shown in Figure 5, when secondary and triple-frequency harmonics impedance matching reflection coefficient phase is changed in value range,
There is apparent layered structure in efficiency of amplitude, the amplification efficiency highest of amplifier is represented at the top of layered structure, then gradually
Successively decrease, therefore, we choose the corresponding second harmonic phase of efficiency of amplitude top and triple-frequency harmonics phase value range is
Amplifier high efficient design space, i.e., when second harmonic impedance matching reflection coefficient phase and triple-frequency harmonics impedance matching reflection system
When number phase falls in this design space (i.e. value range), efficiency of amplitude meets preset threshold requirement.
Value is 70% to threshold value described above in the present embodiment, certainly, in actual application, according to specific requirement
Difference, select different transistor and working frequency range, threshold value value range are as follows: 30%-80%.
Under the conditions of low pass matching network, output matching circuit is adjusted, so that second harmonic when N working band output matching
Impedance matching reflection coefficient phase and triple-frequency harmonics impedance matching reflection coefficient phase are in amplifier high efficient design space,
And the intermediate frequency band of adjacent two working bands exports second harmonic impedance matching reflection coefficient phase and triple-frequency harmonics when matching
Impedance matching reflection coefficient phase is in the step 104 outside amplifier high efficient design space.
The intermediate frequency band of above adjacent two working bands is generally the median of adjacent two working band respective frequencies,
But in practical engineering application, can near median value.
We design obtained power amplifier and are able to maintain in this preset three frequency band in greater efficiency in this way.And
In the region between these three frequency bands, efficiency and output power can decrease, to form three more significantly
Working band.
Using above-described design method, it would be desirable to which the matching of progress is no longer just 9 minor matters, but one low
Open network.For the angle of microwave matching, just it is very easy to realize.The matching to the frequency point of concern is only needed to carry out certain journey
The adjustment of degree then may be used.
Specific embodiment
Based on above-mentioned design method, the present embodiment devises three band power amplifiers.Three band power amplification
Three autonomous working frequencies of device are respectively as follows: f1=1.5GHz, f2=2.1GHz and f3=2.5GHz, output power 10W, it is brilliant
The 10W GaN HEMT (CGH40010F) of body pipe selection Cree company.According to the method described above, the starting point of design is F quasi-mode,
By matching simple as far as possible, i.e. low pass matching network method realizes the fundamental wave in three frequency bands, secondary and triple-frequency harmonics
Matching, so that amplifier is able to maintain in these three frequency bands in greater efficiency.And in the region between these three frequency bands,
Efficiency and output power can decrease, to form three more apparent working bands.
The output mating structure of three band power amplifiers is as shown in fig. 6, include stub matching network, and consider crystal
The influence of pipe parasitic parameter.Substrate is RT 5880, with a thickness of 0.254mm, substrate dielectric constant 2.2.Final matching results are such as
Shown in Fig. 7 and Fig. 8.Design of Simulation considers amplifier fundamental wave, second harmonic and triple-frequency harmonics impedance.Fig. 8 is simultaneously
Three working frequency matching results are given in the position of high efficiency matching area.As shown in fig. 7, impedance of fundamental frequency matches main position
In the region 40Ohm, secondary and triple-frequency harmonics impedance is located at the edge of Smith circle diagram.Three frequency points are respectively positioned on the effect greater than 70%
Rate region, to ensure efficiency operation of the power amplifier in three frequency bands from design.
In order to realize three band operations, the frequency band between three working bands is also required to account for, it is ensured that at this
A little frequency domains, matching result are not at high efficiency and big output power region.Fig. 9 and Figure 10 gives in three working bands
Between region matching properties Smith circle diagram and amplification efficiency schematic diagram.For f4=1.7GHz and f5=2.35GHz,
Matching result is in the edge of 60% efficiency.This means that efficiency will be than the three of amplifier operation on the two frequency points
A frequency band (70% or more) is much lower, to form three apparent efficient operation frequency bands, realizes the work of three band amplifiers.
Three band power amplifier simulation results are summarised in table 1: in 1.5GHz, gain 12.2dB, drain efficiency is
75.1%, output power 41.2dBm；In 2.1GHz, gain 12.6dB, drain efficiency 74.4%, output power is
41.6dBm；In 2.5GHz, gain 11.4dB, drain efficiency 74%, output power 40.1dBm.Analysis simulation result obtains
Out, amplifier shows the load line behavior of similar F class A amplifier A mode on three frequency points.The load line of 2.1GHz shows
Maximum impedance of fundamental frequency is gone out, output power is also corresponding maximum.The load line of 2.5GHz shows higher impedance of fundamental frequency,
It is bigger compared to 1.5GHz and 2.1GHz that this also corresponds to position of the impedance of fundamental frequency of 2.5GHz in Fig. 7 on Smith circle diagram, and
The output power that amplifier is resulted in 2.5GHz is minimum.
Table 1
Three band power amplifier test results are summarised in table 2: as shown in Table 2: in 1.5GHz, the output tested
Power is greater than 40dBm, drain efficiency 63%, gain 11.7dB；In 2.1GHz, the output power tested is greater than
41dBm, drain efficiency are greater than 70%, gain 12dB；In 2.5GHz, the output power tested is 39.8dBm, drain electrode effect
Rate is 55%, gain 10.4dB.
Table 2
| Frequency | Gain | Drain efficiency | Output power |
| 1.5GHz | 11.7dB | 63% | >40dBm |
| 2.1GHz | 12dB | 70% | >41dBm |
| 2.5GHz | 10.4dB | 55% | 39.8dBm |
From the emulation and test result comparison in Tables 1 and 2, it can be seen that, three band power amplifiers of design are at three
Really three more apparent high efficiency and high-gain band are formd on working band.This demonstrate that the reasonability in design.This
A kind of in contrast very simple matching way of design application, successfully realizes the work on 1.5GHz, 2.1GHz and 2.5GHz
Three band power amplifiers made, it was demonstrated that the reasonability of mentality of designing.
The content that description in the present invention is not described in detail belongs to the well-known technique of professional and technical personnel in the field.
The present invention is described in detail above by specific and preferred embodiment, but those skilled in the art should be bright
White, the present invention is not limit to that embodiments describe above, all within the spirits and principles of the present invention, made any modification,
Equivalent replacement etc., should all be included in the protection scope of the present invention.
Claims (4)
1. multi-pass band Designing power amplifier method, the amplifier includes N working band, characterized by comprising:
Power amplifier is emulated, between amplifier amplification efficiency and fundamental wave, second harmonic and triple-frequency harmonics is obtained
The step of with relationship；
Under the conditions of low pass matching network, efficiency of amplitude is obtained with the step of second harmonic phase and triple-frequency harmonics phase change relationship
Suddenly；
The step of obtaining amplifier high efficient design space, the high efficient design space are that efficiency of amplitude is greater than preset threshold
When second harmonic phase and triple-frequency harmonics phase value range；
Under the conditions of low pass matching network, output matching circuit is adjusted, so that when N working band output matching in working band
Second harmonic phase and triple-frequency harmonics phase are in amplifier high efficient design space, and the centre of two neighboring working band
Second harmonic phase and triple-frequency harmonics phase are in the step outside amplifier high efficient design space when frequency band output matching.
2. multi-pass according to claim 1 band Designing power amplifier method, it is characterised in that: the power amplifier with
F power-like amplifier mode is basic mode.
3. multi-pass band Designing power amplifier method according to claim 1, it is characterised in that: the efficiency preset threshold
According to selected transistor, working frequency range different set, value range are as follows: 30%-80%.
4. multi-pass band Designing power amplifier method according to claim 1, it is characterised in that: adjacent two work
The intermediate frequency band of frequency band specifically: the median of adjacent two working band respective frequencies.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610201061.3A CN105897199B (en) | 2016-03-31 | 2016-03-31 | Multi-pass band Designing power amplifier method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610201061.3A CN105897199B (en) | 2016-03-31 | 2016-03-31 | Multi-pass band Designing power amplifier method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105897199A CN105897199A (en) | 2016-08-24 |
| CN105897199B true CN105897199B (en) | 2018-12-21 |
Family
ID=57012231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610201061.3A Active CN105897199B (en) | 2016-03-31 | 2016-03-31 | Multi-pass band Designing power amplifier method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105897199B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7248109B2 (en) * | 2004-07-08 | 2007-07-24 | Pelikan Technologies, Inc. | Method and apparatus for an improved power amplifier |
| CN102570991A (en) * | 2012-02-22 | 2012-07-11 | 刘轶 | Output matching circuit of radio frequency (RF) power amplifier |
| CN103457551A (en) * | 2013-09-12 | 2013-12-18 | 电子科技大学 | Design method for radio frequency power amplifier broadband matching circuit and smith chart used by design method |
| CN103988424A (en) * | 2011-11-11 | 2014-08-13 | 天工方案公司 | Flip-chip linear power amplifier with high power added efficiency |
| CN104158503A (en) * | 2014-08-20 | 2014-11-19 | 无锡研奥电子科技有限公司 | X-waveband power amplifier based on GaN |
| CN104378085A (en) * | 2014-11-27 | 2015-02-25 | 重庆蓝岸通讯技术有限公司 | RF impedance matching debugging method |
-
2016
- 2016-03-31 CN CN201610201061.3A patent/CN105897199B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7248109B2 (en) * | 2004-07-08 | 2007-07-24 | Pelikan Technologies, Inc. | Method and apparatus for an improved power amplifier |
| CN103988424A (en) * | 2011-11-11 | 2014-08-13 | 天工方案公司 | Flip-chip linear power amplifier with high power added efficiency |
| CN102570991A (en) * | 2012-02-22 | 2012-07-11 | 刘轶 | Output matching circuit of radio frequency (RF) power amplifier |
| CN103457551A (en) * | 2013-09-12 | 2013-12-18 | 电子科技大学 | Design method for radio frequency power amplifier broadband matching circuit and smith chart used by design method |
| CN104158503A (en) * | 2014-08-20 | 2014-11-19 | 无锡研奥电子科技有限公司 | X-waveband power amplifier based on GaN |
| CN104378085A (en) * | 2014-11-27 | 2015-02-25 | 重庆蓝岸通讯技术有限公司 | RF impedance matching debugging method |
Non-Patent Citations (2)
| Title |
|---|
| 射频功率放大器中效率提升技术的研究;雷奇;《中国优秀硕士学位论文全文数据库信息科技辑》;20130731;全文 * |
| 预失真Doherty功率放大器的设计;吴飞明;《中国优秀硕士学位论文全文数据库信息科技辑》;20130331;全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105897199A (en) | 2016-08-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Shi et al. | Broadband continuous-mode Doherty power amplifiers with noninfinity peaking impedance | |
| CN107332527B (en) | Implementation method of broadband efficient J-class power amplifier based on compact output matching network | |
| CN107210710B (en) | Three-way sequential power amplifier | |
| Lu et al. | Resistive second-harmonic impedance continuous class-F power amplifier with over one octave bandwidth for cognitive radios | |
| CN110365301A (en) | A kind of inverse E class radio-frequency power amplifier suitable for 5G | |
| CN104617896A (en) | Broadband highly efficient continuous inverse class-F power amplifier and design method thereof | |
| CN110708029B (en) | Dual-band different-direction power amplifier based on unequal-length transmission line and design method thereof | |
| CN109525208A (en) | A kind of novel double-frequency band high efficiency power amplifier based on harmonic controling | |
| CN113162554A (en) | Harmonic control-based hybrid high-efficiency power amplifier and design method thereof | |
| CN110011623A (en) | A kind of incorgruous power amplifier of dual band radio frequency | |
| Akbarpour et al. | Analytical design methodology for generic Doherty amplifier architectures using three-port input/output networks | |
| Piazzon et al. | A method for designing broadband Doherty power amplifiers | |
| Tan et al. | Design of a high power, wideband power amplifier using AlGaN/GaN HEMT | |
| CN105897199B (en) | Multi-pass band Designing power amplifier method | |
| CN101364659B (en) | Method for reducing active Balun phase unbalance degree of wideband CS/CG | |
| CN203800892U (en) | High-linearity power amplifier | |
| Zarghami et al. | A novel design methodology for extended continuous class-F power amplifiers in wireless applications | |
| CN114978045A (en) | Dual-frequency Doherty power amplifier and radio frequency discrete device | |
| Meng et al. | A postmatching concurrent dual‐band Doherty power amplifier with enhanced bandwidth | |
| Zheng et al. | Design of a dual-band Doherty power amplifier utilizing simplified phase offset-lines | |
| CN106982036A (en) | A kind of broadband harmonic containing resistive wave filter suppresses power amplifier | |
| Kumaran et al. | A 26GHz balun-first three-way Doherty PA in 40nm CMOS with 20.7 dBm Psat and 20dB power gain | |
| CN110971194B (en) | High-efficiency dual-band power amplifier based on harmonic control | |
| Shao et al. | Dual-band microwave power amplifier design using GaN transistors | |
| Zhao et al. | Design of wideband high‐efficiency power amplifier based on continuous inverse modes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |