CN105897199A - Design method for multi-band-pass power amplifier - Google Patents

Design method for multi-band-pass power amplifier Download PDF

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Publication number
CN105897199A
CN105897199A CN201610201061.3A CN201610201061A CN105897199A CN 105897199 A CN105897199 A CN 105897199A CN 201610201061 A CN201610201061 A CN 201610201061A CN 105897199 A CN105897199 A CN 105897199A
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harmonic
amplifier
efficiency
power amplifier
phase place
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CN105897199B (en
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杨飞
于洪喜
殷康
赵恒飞
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Xian Institute of Space Radio Technology
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/42—Modifications of amplifiers to extend the bandwidth
    • H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
    • H03F1/486—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers with IC amplifier blocks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)

Abstract

The invention discloses a design method for a multi-band-pass power amplifier. The method specifically comprises the following steps of obtaining matching relations between the amplification efficiency of the amplifier and the first harmonic, the second harmonic and the third harmonic; obtaining phase change relations of the amplifier efficiency along with the second harmonic phase and the third harmonic phase under a low-pass matching network condition; obtaining a high-efficiency design space of the amplifier; adjusting an output matching circuit under the low-pass matching network condition to make the second harmonic phase and the third harmonic phase be in the high-efficiency design space of the amplifier when outputs of N working bands are matched and make the second harmonic phase and the third harmonic phase be outside the high-efficiency design space of the amplifier when outputs of middle frequency bands of two adjacent working bands are matched. According to the method in the invention, the difficulty in matching the outputs of the power amplifier is greatly simplified, the method has great engineering realization, the matching of numerous branches is not needed, the parasitic effect is reduced, the design network is simplified, the excellent performance is realized and the conventional complicated design method for the multi-band-pass power amplifier can be replaced.

Description

Many passbands Designing power amplifier method
Technical field
The invention belongs to microwave components design field, be specifically related to a kind of many passbands Designing power amplifier method, Particularly one utilizes low pass matching network to carry out many passbands Designing power amplifier method.
Background technology
The power consumption of modern wireless communication systems depends primarily on the efficiency of power-amplifier stage.Traditional height Power amplifier mode in 70% efficiency depends primarily on outfan higher hamonic wave reflexless terminal accurately.? In narrowband systems, F power-like amplifier is great representational one.
Even to this day, Modern wireless communication terminal need to apply a single hardware to cover multiple frequency range, It is the most urgent that the demand of broadband receiver and many passbands transmitter becomes.As above joint is described, double frequency-band or many The high efficiency amplifier circuit of frequency band often means that bigger challenge.Because necessary not only at each frequency band Upper realization suitable first-harmonic load transfer, it is also desirable to suitably high-order harmonic wave impedance termination.This often leads to Join extremely complex, cannot realize the most at all.
As a example by three frequency bands efficient F power-like amplifier, traditional method for designing needs to realize 9 frequencies Accurate match, if consider amplitude and phase place simultaneously, then needs the variable up to 18 considered.So multiple Miscellaneous output matching is the most uncontrollable in Realism Design.This is not only since it is desired that the frequency of coupling is many, Also because the coupling of each frequency influences each other, cause final result the most unsatisfactory.
Summary of the invention
The technology of the present invention solves problem: overcome the deficiencies in the prior art, it is provided that a kind of many passbands power Amplifier design philosophy, first obtains amplifier amplification efficiency and mates with first-harmonic, second harmonic and triple-frequency harmonics Between relation, and by the low-pass network the most easily realized in engineering, amplifier is mated, by impact effect The factor of rate is reduced to phase place and the phase place of triple-frequency harmonics reflection coefficient of second harmonic reflection coefficient.Thus can So that simple low-pass network should be used, the relevant parameter of the working band of amplifier is fallen empty in high efficiency Between, and the frequency band between operated adjacent frequency band is in inefficient space.Many passbands power amplification in the present invention Device method for designing enormously simplify the difficulty of output matching of power amplifier, has great Project Realization, Need not realize by extremely many minor matters couplings, decrease ghost effect, simplify planned network, can realize Excellent performance, the complicated multiband power amplifier method for designing of alternative tradition.
The technical solution of the present invention is: many passbands Designing power amplifier method, and described amplifier includes N bar working band, including:
Power amplifier is emulated, obtains amplifier amplification efficiency humorous with first-harmonic, second harmonic and three times The step of the relation between ripple coupling；
Under the conditions of low pass matching network, obtain efficiency of amplitude and become with second harmonic phase place and triple-frequency harmonics phase place The step of change relation；
Obtaining the step of amplifier high efficiency design space, described high efficiency design space is that efficiency of amplitude is big Second harmonic phase place and triple-frequency harmonics phase place span when predetermined threshold value；
Under the conditions of low pass matching network, adjust output matching circuit so that during N bar working band output matching Second harmonic phase place and triple-frequency harmonics phase place in working band are in amplifier high efficiency design space, and During the intermediate frequency band output matching of adjacent two working bands, second harmonic phase place and triple-frequency harmonics phase place are in and put Step outside big device high efficiency design space.
Described power amplifier is pattern based on F power-like amplifier pattern.
Described efficiency predetermined threshold value according to selected transistor, working frequency range different set, span is: 30%-80%.
The intermediate frequency band of described adjacent two working bands is particularly as follows: adjacent two working band respective frequencies Intermediate value.
The present invention compared with prior art provides the benefit that:
Method in the present invention utilizes simple low pass matching network to replace the conventional coupling by frequency band, is greatly simplified The difficulty of output matching of power amplifier, has a great Project Realization, it is not necessary to by extremely many minor matters Coupling realizes, and decreases ghost effect, simplifies planned network, can realize excellent performance, alternative The complicated multiband power amplifier method for designing of tradition.
Accompanying drawing explanation
Fig. 1 is impedance of fundamental frequency design space of the present invention；
Fig. 2 is second harmonic impedance design space of the present invention；
Fig. 3 is triple-frequency harmonics impedance termination design space of the present invention；
Fig. 4 is the inventive method flow chart；
Fig. 5 secondary of the present invention and triple-frequency harmonics impedance design space (based on low pass coupling topology)；
Fig. 6 is the load matching network structure of mentality of designing of the present invention in specific embodiment；
Fig. 7 is the Smith circle of the three frequency bands interior coupling impedance operator of mentality of designing of the present invention in specific embodiment Figure schematic diagram；
Fig. 8 is the amplification efficiency of the three frequency bands interior coupling impedance operator of mentality of designing of the present invention in specific embodiment Schematic diagram；
Fig. 9 is the Region Matching impedance operator between three frequency bands of mentality of designing of the present invention in specific embodiment Smith circle diagram schematic diagram；
Figure 10 is the Region Matching impedance operator between three frequency bands of mentality of designing of the present invention in specific embodiment Efficiency schematic diagram.
Detailed description of the invention
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearer, with Lower combination drawings and Examples, are further elaborated to the present invention, it will be appreciated that described herein Specific embodiment only in order to explain the present invention, be not intended to limit the present invention.
As a example by three frequency band F power-like amplifiers, output matching is illustrated:
Preferably F quasi-mode, first-harmonic most preferably mates impedance and is chosen as Ropt, by RoptAs impedance of fundamental frequency Real part, secondary and triple-frequency harmonics impedance termination are respectively short circuit and open circuit.Below to its first-harmonic, second harmonic It is analyzed respectively with triple-frequency harmonics.
First, impedance of fundamental frequency considers that it has a reactive element, as shown in formula (1):
Zf0=Ropt-Xf0 (1)
Wherein :-45Ohm < Xf0<45Ohm.Wherein, Zf0For impedance of fundamental frequency, Xf0Void for impedance of fundamental frequency Portion.
Now, second harmonic terminal remains short circuit, and triple-frequency harmonics terminal remains open circuit.Fig. 1 gives The characteristic that efficiency of amplitude changes with reactive component.As shown in Figure 1, as-30Ohm < Xf0< during 30Ohm, Efficiency can be maintained at more than 70%, this in the frequency range of the present embodiment be considered as minimum can accept imitative True efficiency.
Should be in the same way, it is possible to obtain the high efficiency design space of second harmonic impedance.To second harmonic Impedance, not only analyze its along Smith circle diagram edge variation, from being shorted to open circuit, then return from another side Situation to short circuit, it is also considered that Secondary Match impedance, in the characteristic within Smith circle diagram, i.e. comprises The situation of resistive compositions.Second harmonic impedance change on Smith circle diagram can be represented by formula (2):
S11(2f0)=δ2f0·(cosθ2f0+jsinθ2f0) (2)
Wherein S11(2f0)For the reflection coefficient of second harmonic impedance, δ2f0For second harmonic impedance matching reflection coefficient Amplitude, θ2f0For the phase place of second harmonic reflection coefficient, wherein 0.5 < δ2f0<1.Formula (2) means two Subharmonic terminal impedance Z2f0For:
Z 2 f 0 = 50 &times; 1 + S 11 ( 2 f 0 ) 1 - S 11 ( 2 f 0 ) - - - ( 3 )
At-180 ° < θ < 180 ° and 0.5 < δ2f0< analyze the efficiency characteristic of power amplifier in the range of 1, such as Fig. 2 Shown in.Work as δ2f0When=1, if second harmonic impedance can be maintained at 100 ° < θ < 260 ° degree in the range of, its Efficiency is higher than 70%.But, when in view of resistive compositions in second harmonic impedance, this scope meeting Become is fairly small, such as, work as δ2f0When=0.5, maximal efficiency only has 71.8%, and the efficiency higher than 70% Interval by δ2f0< θ < 260 ° is reduced to 130 ° < θ < 210 ° to when=1 100 °.So amplifying for three band power For device (or multiband power amplifier), the resistive compositions in second harmonic should be avoided as far as possible, So that it is guaranteed that be obtained in that more design space on Smith circle diagram.
Analyzing identical with second harmonic impedance termination, the impact of efficiency also can be extracted by triple-frequency harmonics impedance termination Out, result is as shown in Figure 3.Triple-frequency harmonics impedance variation is defined as:
S11(3f0)=δ3f0·(cosθ3f0+jsinθ3f0) (4)
Wherein S11(3f0)For triple-frequency harmonics impedance reflection coefficient, δ3f0For triple-frequency harmonics impedance matching reflection coefficient Amplitude, θ3f0For the phase place of triple-frequency harmonics reflection coefficient ,-180 ° < θ < 180 °, 0.5 < δ3f0<1。
Triple-frequency harmonics high efficiency design space shown in Fig. 3 is more than the scope of second harmonic terminal, the biggest Most scopes, its simulation efficiency can be kept above 70%.This means for multiband based on F class Power amplifier mates, and second harmonic impedance termination should be restricted to the region close to short circuit as far as possible, and three times humorous The scope of natural impedance terminal the most in contrast can be the most flexible.
Analyzing based on above, the present invention proposes a kind of many passbands Designing power amplifier method, described amplification Device includes N bar working band, and flow chart as shown in Figure 4, specifically includes:
Power amplifier is emulated, obtains amplifier amplification efficiency humorous with first-harmonic, second harmonic and three times The step 101 of the relation between ripple coupling, described relation is concrete as shown in FIG. 1 to 3；
Under the conditions of low pass matching network, obtain efficiency of amplitude and become with second harmonic phase place and triple-frequency harmonics phase place The step 102 of change relation；
From the point of view of we self matched design experience, low pass matching network is relatively easy to realize.It is to say, Secondary and triple-frequency harmonics impedance termination are easily achieved at the edge of Smith circle diagram, but are difficult to navigate to On specific matching point.This means δ2f0＞ 0.9 and δ3f0＞ 0.9 is not to be extremely difficult to (why more than 0.9 Rather than allow for matching network equal to 1 and need to cover multiple frequency range, and general coupling microstrip line Q-value is also Will not be the highest, thus a certain amount of reactive element is inevitable in secondary and triple-frequency harmonics impedance matching ).Based on this it is assumed that the phase place of secondary and triple-frequency harmonics impedance is the brightest for the meaning of actual design Aobvious.
This variation relation as it is shown in figure 5, Fig. 5 summarizes the impact for efficiency of secondary and triple-frequency harmonics phase place, I.e. based on low pass matching network, when secondary and triple-frequency harmonics phase matched change, the change of efficiency of amplitude Situation.Wherein, abscissa 0～360 degree of reflection coefficient phases being changed to second harmonic coupling change, horizontal seat Mark-180～180 degree of reflection coefficient phase changes being changed to triple-frequency harmonics coupling.As can be seen from Figure 5, secondary is worked as When being changed in span with triple-frequency harmonics phase place, efficiency of amplitude occurs in that significantly layering, table Understand that to there is this between secondary and triple-frequency harmonics impedance matching reflection coefficient phase and efficiency of amplitude available Relation.
Obtaining the step of amplifier high efficiency design space, described high efficiency design space is that efficiency of amplitude is big Second harmonic phase place and triple-frequency harmonics phase place span 103 when predetermined threshold value；
As shown in Figure 5, carry out in span when secondary and triple-frequency harmonics impedance matching reflection coefficient phase During change, efficiency of amplitude occurs in that obvious hierarchy, hierarchy top represent the amplification of amplifier Efficiency is the highest, the most gradually successively decreases, and therefore, we choose the second harmonic that efficiency of amplitude top is corresponding Phase place and triple-frequency harmonics phase place span are amplifier high efficiency design space, i.e. when second harmonic impedance Join reflection coefficient phase and triple-frequency harmonics impedance matching reflection coefficient phase falls in this design space (i.e. value Scope) time, efficiency of amplitude meets threshold requirement set in advance.
The above threshold value value in the present embodiment is 70%, certainly, in actual application, according to The difference of specific requirement, selects different transistors and the working frequency range, threshold value span to be: 30%-80%.
Under the conditions of low pass matching network, adjust output matching circuit so that during N bar working band output matching Second harmonic impedance matching reflection coefficient phase and triple-frequency harmonics impedance matching reflection coefficient phase are in amplifier In high efficiency design space, and second harmonic impedance during the intermediate frequency band output matching of adjacent two working bands Coupling reflection coefficient phase and triple-frequency harmonics impedance matching reflection coefficient phase are in amplifier high efficiency design sky Step 104 outside between.
The intermediate frequency band of the most adjacent two working bands is generally in adjacent two working band respective frequencies Between be worth, but in practical engineering application, can near intermediate value value.
The power amplifier that so our design obtains can be maintained at more efficient in these three frequency bands preset Rate.And in the region between these three frequency band, efficiency and output can decrease, thus shape Become three more significantly working bands.
Apply above-described method for designing, it would be desirable to the coupling carried out, be the most no longer 9 minor matters, and It it is a low-pass network.For the angle of microwave matching, just it is very easy to realize.Have only to concern The coupling of frequency carries out a certain degree of adjustment and then may be used.
Specific embodiment
Based on above-mentioned method for designing, the present embodiment devises three band power amplifier.This three frequency bands merit Three frequencies that work alone of rate amplifier are respectively as follows: f1=1.5GHz, f2=2.1GHz and f3=2.5GHz, Output is 10W, and 10W GaN HEMT (CGH40010F) of Cree company selected by transistor. According to the method described above, the starting point of design is F quasi-mode, by the simplest coupling, i.e. and low pass coupling Network method realizes the coupling of the first-harmonic in three frequency bands, secondary and triple-frequency harmonics so that amplifier is at this Greater efficiency can be maintained in three frequency bands.And in the region between these three frequency band, efficiency and defeated Go out power can decrease, thus form three more significantly working bands.
The output matching structure of three band power amplifier as shown in Figure 6, including stub matching network, and is examined Consider the impact of transistor parasitic parameter.Substrate is RT 5880, and thickness is 0.254mm, and substrate dielectric is normal Number is 2.2.Final matching results is as shown in Figure 7 and Figure 8.Design of Simulation is humorous to amplifier first-harmonic, secondary Ripple and triple-frequency harmonics impedance are all considered.Fig. 8 gives three operating frequency matching results at height simultaneously The position of efficiency matching area.As it is shown in fig. 7, impedance of fundamental frequency mates is predominantly located at 40Ohm region, two Secondary and triple-frequency harmonics impedance is positioned at the edge of Smith circle diagram.Three frequencies are respectively positioned on the efficiency area more than 70% Territory, thus guarantee power amplifier efficiency operation in three frequency bands from design.
In order to realize three band operation, the frequency band between three working bands is also required to account for, really Protecting at these frequency domains, its matching result is not at high efficiency and big output region.Fig. 9 and Figure 10 The Smith circle diagram and the amplification efficiency that give the matching properties in the region between three working bands are illustrated Figure.For f4=1.7GHz and f5=2.35GHz, its matching result is in the edge of 60% efficiency.This Meaning on the two frequency, efficiency will be lower than the three of amplifier operation frequency bands (more than 70%) Many, thus form three obvious efficient operation frequency bands, it is achieved the work of three band amplifiers.
Three band power amplifier simulation results collect in Table 1: at 1.5GHz, and gain is 12.2dB, Drain efficiency is 75.1%, and output is 41.2dBm；At 2.1GHz, gain is 12.6dB, drain electrode Efficiency is 74.4%, and output is 41.6dBm；At 2.5GHz, gain is 11.4dB, drain efficiency Being 74%, output is 40.1dBm.Analysis simulation result draws, amplifier is equal table on three frequencies Reveal the load line behavior of similar F class A amplifier A pattern.The load line of 2.1GHz shows the base of maximum Natural impedance, its output is also corresponding maximum.The load line of 2.5GHz shows higher impedance of fundamental frequency, This also corresponds in Fig. 7 the impedance of fundamental frequency of 2.5GHz position on Smith circle diagram compared to 1.5GHz Bigger with 2.1GHz, and it is minimum at the output of 2.5GHz to result in amplifier.
Table 1
Three band power amplifier test results collect in table 2: as shown in Table 2: in 1.5GHz, test The output obtained is more than 40dBm, and drain efficiency is 63%, and gain is 11.7dB；At 2.1GHz, The output that test obtains is more than 70% more than 41dBm, drain efficiency, and gain is 12dB；? 2.5GHz, the output that test obtains is 39.8dBm, and drain efficiency is 55%, and gain is 10.4dB.
Table 2
Frequency Gain Drain efficiency Output
1.5GHz 11.7dB 63% 40dBm
2.1GHz 12dB 70% 41dBm
2.5GHz 10.4dB 55% 39.8dBm
Emulation and test result contrast from Tables 1 and 2 are it will be seen that three band power of design are amplified Device defines three more significantly high efficiency and high-gain bands on three working bands really.This demonstrate that Reasonability in design.The simplest matching way of the design application one, successfully achieves Three band power amplifier that work on 1.5GHz, 2.1GHz and 2.5GHz, it was demonstrated that mentality of designing Reasonability.
The content not being described in detail in description of the invention belongs to the known skill of professional and technical personnel in the field Art.
The present invention is described in detail above by concrete and preferred embodiment, but those skilled in the art Should be understood that and the invention is not limited in embodiment described above, all within the spirit and principles in the present invention, Any amendment of being made, equivalent etc., should be included within the scope of the present invention.

Claims (4)

1. more than passband Designing power amplifier method, described amplifier includes N bar working band, its feature It is to include:
Power amplifier is emulated, obtains amplifier amplification efficiency humorous with first-harmonic, second harmonic and three times The step of the relation between ripple coupling；
Under the conditions of low pass matching network, obtain efficiency of amplitude and become with second harmonic phase place and triple-frequency harmonics phase place The step of change relation；
Obtaining the step of amplifier high efficiency design space, described high efficiency design space is that efficiency of amplitude is big Second harmonic phase place and triple-frequency harmonics phase place span when predetermined threshold value；
Under the conditions of low pass matching network, adjust output matching circuit so that during N bar working band output matching Second harmonic phase place and triple-frequency harmonics phase place in working band are in amplifier high efficiency design space, and During the intermediate frequency band output matching of adjacent two working bands, second harmonic phase place and triple-frequency harmonics phase place are in and put Step outside big device high efficiency design space.
Many passbands Designing power amplifier method the most according to claim 1, it is characterised in that: described Power amplifier is pattern based on F power-like amplifier pattern.
Many passbands Designing power amplifier method the most according to claim 1, it is characterised in that: described Efficiency predetermined threshold value according to selected transistor, working frequency range different set, span is: 30%-80%.
Many passbands Designing power amplifier method the most according to claim 1, it is characterised in that: described The intermediate frequency band of adjacent two working bands is particularly as follows: the intermediate value of adjacent two working band respective frequencies.
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CN102570991A (en) * 2012-02-22 2012-07-11 刘轶 Output matching circuit of radio frequency (RF) power amplifier
CN103457551A (en) * 2013-09-12 2013-12-18 电子科技大学 Design method for radio frequency power amplifier broadband matching circuit and smith chart used by design method
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