CN105895729A - Graphene photoelectric detector - Google Patents
Graphene photoelectric detector Download PDFInfo
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- CN105895729A CN105895729A CN201610392574.7A CN201610392574A CN105895729A CN 105895729 A CN105895729 A CN 105895729A CN 201610392574 A CN201610392574 A CN 201610392574A CN 105895729 A CN105895729 A CN 105895729A
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- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 51
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000010931 gold Substances 0.000 claims abstract description 7
- 229910052737 gold Inorganic materials 0.000 claims abstract description 7
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 7
- 238000009413 insulation Methods 0.000 claims abstract 2
- 239000010410 layer Substances 0.000 claims description 67
- 239000002356 single layer Substances 0.000 claims description 7
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 6
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 2
- 230000004044 response Effects 0.000 abstract description 14
- 239000010703 silicon Substances 0.000 abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 6
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 230000031700 light absorption Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 6
- 230000004043 responsiveness Effects 0.000 description 5
- 239000002131 composite material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- LUTSRLYCMSCGCS-BWOMAWGNSA-N [(3s,8r,9s,10r,13s)-10,13-dimethyl-17-oxo-1,2,3,4,7,8,9,11,12,16-decahydrocyclopenta[a]phenanthren-3-yl] acetate Chemical compound C([C@@H]12)C[C@]3(C)C(=O)CC=C3[C@@H]1CC=C1[C@]2(C)CC[C@H](OC(=O)C)C1 LUTSRLYCMSCGCS-BWOMAWGNSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- 230000005669 field effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
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- 238000004377 microelectronic Methods 0.000 description 1
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- 239000002073 nanorod Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
Abstract
The invention discloses a graphene photoelectric detector. The structure of the detector sequentially comprises a gold/nickel layer, graphene, silicon dioxide, a semiconductor nanometer structure and a silicon substrate, wherein the gold/nickel layer is taken as a source and a drain which are connected with an external circuit, the graphene is taken as an electron transmission layer, the silicon dioxide is taken as an insulation dielectric layer, the semiconductor nanometer structure is taken a light absorption carrier, and the silicon substrate is taken as a grid electrode. The working wave band of the detector can be effectively controlled according to the types, the sizes and the like of the semiconductor nanometer structures, the detector simultaneously has excellent luminous sensitivity and fast response time, and the bottleneck of the graphene photoelectric detector in performance of ultra-high speed, super-sensitivity response and different demand response wave band ranges is successfully broken through. Further, the fabrication process of the detector is simple and is completely compatible with an existing silicon technology and a fabrication technology of the semiconductor nanometer structure.
Description
Technical field
The present invention relates to technical field of photoelectric detection, in particular to a kind of based on graphene film
Photodetector.
Background technology
2004, the research group that Graphene is led by University of Manchester Andre professor Geim was at first
Find.It is to be currently known the thinnest a kind of material (the most single carbon atom thickness), and possesses high
Carrier mobility (intrinsic mobility～200,000cm2v-1s-1), extraordinary low-dimensional stability,
The spectral absorption scope of ultra-wide and the electric field-tunable of electron concentration are it is considered to be great potential
Electronics/photoelectron material, thus have in multiple fields and be extremely widely applied, as can be used for preparing high property
The microelectronic components such as energy field-effect transistor, (especially infrared light is visited for solaode, photodetector
Survey) etc. photoelectric device etc..But, zero band-gap energy band structure of Graphene result in its relatively low optics and inhales
Receive (～2.3%) and electron hole pair separation efficiency, and then limit its photodetection performance (intrinsic
The responsiveness of Graphene only has～6mA W-1)。
Nanometer semiconductor structure (such as quantum dot, nanotube, nano wire/rod etc.) has with size adjustable
Optical characteristics, high optical absorption and fluorescent emission quantum efficiency, and optical stability reliably,
May be used for preparing high-performance optical electrical part.But, nanometer semiconductor structure particularly quantum dot generally has
There is relatively low electron mobility (1 × 10-3to 10cm2v-1s-1), which also limits its photoelectric properties enters one
Step improves.Graphene has the electric property of the biggest specific surface area and excellence, by itself and quasiconductor
The compound electric property that can make full use of Graphene excellence of nano material and semiconductor nano material highlight
Optical characteristics, is expected to promote photoelectric properties greatly.
Up to the present, based on Graphene and the photogenic voltage of nanometer semiconductor structure, optical detection and send out
Optical device is in the news the most in succession, and points out that the introducing of composite construction can effectively promote the performance of photoelectric device.
In this composite construction system, use photo-gating mechanism so that the Graphene photoconduction of the type is visited
Survey device (semiconductor-quantum-point-graphene composite structure) and there is the gain of light (10 of superelevation8), thus at light
Detectivity aspect occupies quite prominent advantage.But, this mechanism also exists great limitation,
I.e. electric charge transfer and/or charge-trapping process present in opto-electronic conversion, cause the speed of response extremely low, at milli
Second, even more than the second.And the application of many, as optical alignment, remote sensing, biomedical imaging,
All need badly realize under the service band of different demands quickly, photodetection performance that high sensitivity has concurrently.
Therefore, by avoiding light absorbing material directly to contact with Graphene, introduce electric charge transfer or charge-trapping mistake
Journey, develops and has quickly response and highly sensitive graphene photodetector under different operating wave band concurrently,
The application demand simultaneously meeting every field becomes highly desired, also will have huge commercial promise.
Summary of the invention
For problem above, the present invention provides a kind of graphene photodetector, utilizes semiconductor nano to tie
The interfacial effect of structure layer-silicon, effectively modulates the carrier concentration of Graphene, greatly promotes Graphene device
The photoelectric respone of part.
A kind of graphene photodetector, wherein source electrode and drain electrode connect external power source, 1 layer or 1 layer with
On Graphene electron transfer layer be arranged on insulating medium layer；Half it is sequentially provided with below insulating medium layer
Conductor nanostructured layers and gate electrode layer；Described nanometer semiconductor structure layer is 1 layer or more than 1 layer；Institute
State drain electrode and gate electrode layer is connected by grid power supply.
Preferably, source electrode and drain electrode use the compound electric being made up of the nickel dam that layer gold thick for 50nm is thick with 5nm
Pole.
Preferably, insulating medium layer selects the SiO of 50-200nm2, Al2O3Or HfO2。
Preferably, Graphene electron transfer layer is 1-10 layer.
Preferably, nanometer semiconductor structure layer uses CdSe, CdS or PbS semi-conducting material, single monolayer thick
Degree is 3-8nm.
Preferably, nanometer semiconductor structure layer is more than two-layer.
Preferably, gate electrode layer uses Si, Ge or HgCdTe.
The graphene photodetector that the present invention provides, by using specific structure to arrange so that it is have
Extremely excellent luminous sensitivity, response time is fast, and on the premise of ensureing that both photoelectric properties is stable,
According to using quantum dot classification, the difference of size, service band may select.This detector pulls through
Graphene photoelectric device is in ultrahigh speed, and ultra-sensitivity responds, and service band flexible selectivity, and three
Bottleneck between person's photoelectricity important performance.Additionally, current device architecture is not required to the preparation technology of complexity,
And it is completely compatible with the technology of preparing of silicon technology ripe now and nanometer semiconductor structure.
Accompanying drawing explanation
Fig. 1 is the graphene photodetector structural representation of the present invention；
Wherein, 1-drains, and 2-Graphene electron transfer layer, 3-source electrode, 4-insulating medium layer, 5-partly leads
Body nanostructured layers, 6-gate electrode layer, 7-grid power supply, 8-external power source, 9-ammeter.
Detailed description of the invention
As it is shown in figure 1, a kind of graphene photodetector, wherein source electrode and drain electrode connection external power source, 1
Layer or the Graphene electron transfer layer of more than 1 layer are arranged on insulating medium layer；Below insulating medium layer
It is sequentially provided with nanometer semiconductor structure layer and gate electrode layer；Described nanometer semiconductor structure layer is 1 layer or 1
More than Ceng；Described drain electrode and gate electrode layer are connected by grid power supply.
Its working mechanism is to lose based on work function between nanometer semiconductor structure layer-gate electrode layer bi-material
, thus a built in field is formed in this interface；The wherein preferred silicon of gate electrode layer.With silicon gate electrode
As a example by Ceng, when light is incident on this detector, nanometer semiconductor structure layer absorbs photon, produces photoproduction
Electronics and hole.Photoproduction electricity under the driving of this interface built in field, in nanometer semiconductor structure layer
Son (or hole) injects in the silicon of bottom, meanwhile, and contrary another kind of photohole (or electronics),
Still remaining in nanometer semiconductor structure, these electric charges also act as one extra positive (or negative)
Gate voltage, lifting (or the reduce) Fermi surface of Graphene, modulate the carrier in Graphene passage
Concentration, thus produce high photogenerated current.
By the interfacial effect of semiconductor-quantum-point Yu silicon, compensate for the Graphene light electrical resistivity survey of intrinsic-OR hydridization
Surveying device responsiveness low, response time is long, or the deficiency that response wave band is narrow, has widened Graphene photoelectric device
Application prospect in fields such as optoelectronics.
The thickness of Graphene can be monolayer, bilayer to minority layer (within 10 layers)；Prepare Graphene
Method can be different, such as mechanical stripping method, chemical vapour deposition technique, graft process etc..
The thickness in monolayer of nanometer semiconductor structure layer is defined as the thickness of a lateral size of dots, this layer whole
The body number of plies can be with monolayer, bilayer or multilamellar etc.；The kind of its semiconductor-quantum-point utilized can be different,
Such as CdSe, CdS, PbS etc..The diameter dimension of semiconductor-quantum-point can be different, such as 3nm, 5nm,
8nm etc..
For ease of to the purpose of the present invention, shape, constructing apparatus feature and effect thereof, doing further
Understanding and understanding, hereby give an actual example cooperation accompanying drawing, describes the structure of the embodiment of the present invention in detail.
Embodiment 1
A kind of graphene photodetector, this detector primary structure includes single-layer graphene (tear tape method
Preparation)；90nm silicon dioxide is as insulating medium layer, by hot vapor deposition；Silicon, as gate electrode；
One layer of CdSe semiconductor-quantum-point, absorbs carrier as light, is deposited on silicon face by spin-coating method；Gold/
Nickel, as source electrode and drain electrode, connects external circuit, and thickness is 50nm/5nm, by beamwriter lithography and heat
Vapor deposition.This photodetector reaches nanosecond at the response time of near infrared band, and responsiveness reaches 1.1
×108A/W, the scope of response wave length is from visible ray near infrared band.
Embodiment 2
A kind of graphene photodetector, this detector primary structure includes single-layer graphene (chemical gaseous phase
Prepared by sedimentation)；120nm Al2O3As insulating medium layer, by hot vapor deposition；Ge is as grid electricity
Pole；Two-layer PbS semiconductor-quantum-point, absorbs carrier as light, is deposited on Ge surface by spin-coating method；
Gold/nickel, as source electrode and drain electrode, connects external circuit, and thickness is 50nm/5nm, passes through beamwriter lithography
With hot vapor deposition.This photodetector reaches nanosecond, responsiveness at the response time of near infrared band
Reach 1.2 × 108A/W, the scope of response wave length is from visible ray near infrared band.
Embodiment 3
A kind of graphene photodetector, this detector primary structure includes two layer graphene (chemical gaseous phase
Prepared by sedimentation)；100nm silicon dioxide is as insulating medium layer, by hot vapor deposition；Si conduct
Gate electrode；Four layers of CdS semiconductor-quantum-point, absorb carrier as light, are deposited on Si by spin-coating method
Surface；Gold/nickel, as source electrode and drain electrode, connects external circuit, and thickness is 50nm/5nm, passes through electronics
Bundle photoetching and hot vapor deposition.This photodetector reaches nanosecond at the response time of near infrared band,
Responsiveness reaches 1.35 × 108A/W, the scope of response wave length is from visible ray near infrared band.
Above a kind of graphene photodetector provided by the present invention is described in detail.Herein
Apply specific case principle and the embodiment of the present invention are set forth, the explanation of above example
It is only intended to help to understand the core concept of the present invention.It should be pointed out that, the common skill for the art
For art personnel, under the premise without departing from the principles of the invention, it is also possible to the present invention is carried out some improvement
And modification, these improve and modify in the protection domain also falling into the claims in the present invention.
Claims (7)
1. a graphene photodetector, it is characterised in that source electrode and drain electrode connection external power source, 1
Layer or the Graphene electron transfer layer of more than 1 layer are arranged on insulating medium layer；Depend on below insulating medium layer
Secondary it is provided with nanometer semiconductor structure layer and gate electrode layer；Described nanometer semiconductor structure layer be 1 layer or 1 layer with
On；Described drain electrode and gate electrode layer are connected by grid power supply.
A kind of graphene photodetector the most according to claim 1, it is characterised in that source electrode and
Drain electrode uses the combination electrode being made up of the nickel dam that layer gold thick for 50nm is thick with 5nm.
A kind of graphene photodetector the most according to claim 1, it is characterised in that insulation is situated between
Matter layer selects the SiO of 50-200nm2, Al2O3Or HfO2。
A kind of graphene photodetector the most according to claim 1, it is characterised in that Graphene
Electron transfer layer is 1-10 layer.
A kind of graphene photodetector the most according to claim 1, it is characterised in that quasiconductor
Nanostructured layers uses CdSe, CdS or PbS semi-conducting material, and thickness in monolayer is 3-8nm.
6. according to a kind of graphene photodetector described in claim 1-5, it is characterised in that partly lead
Body nanostructured layers is more than two-layer.
7. according to a kind of graphene photodetector described in claim 1-5, it is characterised in that grid electricity
Pole layer uses Si, Ge or HgCdTe.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106409964A (en) * | 2016-11-21 | 2017-02-15 | 中国电子科技集团公司第十研究所 | Grapheme-based HgCdTe material and preparation method thereof |
| CN106803528A (en) * | 2016-12-28 | 2017-06-06 | 泰州巨纳新能源有限公司 | Position sensitive photo-detector based on Graphene |
| CN107490730A (en) * | 2017-07-21 | 2017-12-19 | 泰州巨纳新能源有限公司 | Application based on the detector of graphene as Non-contact electrostatic detection device |
| CN108899378A (en) * | 2018-06-19 | 2018-11-27 | 复旦大学 | A kind of grid-control is graphene-based ultraviolet to near-infrared InGaAs detector chip |
| CN113471327A (en) * | 2021-06-22 | 2021-10-01 | 中国科学院重庆绿色智能技术研究院 | High-gain graphene photoelectric detector based on double-gate voltage regulation and control and preparation method thereof |
| WO2022151862A1 (en) * | 2021-01-18 | 2022-07-21 | 华中科技大学 | Dielectric layer response-based field effect transistor photodetector |
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