CN103633183A - Graphene medium-far infrared detector and preparing method thereof - Google Patents
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 83
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 title abstract description 5
- 239000002096 quantum dot Substances 0.000 claims abstract description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 10
- 238000002360 preparation method Methods 0.000 claims abstract description 10
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 6
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 21
- 229910002804 graphite Inorganic materials 0.000 claims description 14
- 239000010439 graphite Substances 0.000 claims description 14
- 238000001816 cooling Methods 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 9
- -1 graphite alkene Chemical class 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- 238000005259 measurement Methods 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000001069 Raman spectroscopy Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000000609 electron-beam lithography Methods 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 4
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 238000003723 Smelting Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 239000002105 nanoparticle Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000006911 nucleation Effects 0.000 claims description 3
- 238000010899 nucleation Methods 0.000 claims description 3
- 238000006116 polymerization reaction Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 4
- 238000011160 research Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000000084 colloidal system Substances 0.000 abstract 2
- 230000000295 complement effect Effects 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- 239000000523 sample Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 18
- 150000001875 compounds Chemical class 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005616 pyroelectricity Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
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Abstract
The invention discloses a graphene medium-far infrared detector and a preparing method thereof. The infrared detector comprises a layer of graphene film of which the basic unit is a graphene infrared photoelectric transistor using a colloid quantum dot layer as an optical control top gate. The graphene medium-far infrared probe overcomes the problems of lower absorption rate of graphene to light, and the electricity adjustability of graphene channels is kept, so the graphene medium-far infrared detector can be both optically and electrically bias-controlled. The transistor has ultrahigh infrared absorption rate, inner quantum efficiency, gain and very low noise level and different colloid quantum dot layer materials can be selected according to the difference of detected infrared wavelength ranges. The graphene medium-far infrared detector is easily compatible with the existing silica-based CMOS (complementary metal-oxide-semiconductor transistor) integrated circuit technology, and can realize the large-scale sensor array production with low cost. The successful preparation of the graphene medium-far infrared detector lays a basis for the research on high-performance graphene-based infrared focal plane array sensors.
Description
Technical field:
The present invention relates to a kind of structural design and preparation technology of Infrared Detectors, particularly a kind of structural design and preparation technology of Graphene mid and far infrared detector.
Background technology:
Infrared radiation comprises abundant objective information, and its detection receives much attention.Through the development of 70 years, Infrared Detectors covered shortwave, medium wave and long wave limit, in military and civilian field, was widely applied.At present, the key technology of the high-performance infrared focal plane array transducer based on pyroelectricity, semiconductor quantum well and quantum dot is mainly grasped by the country such as American-European-Japanese, forces domestic research institution to be tackled key problems, and catches up with and even surmounts prior art.
Graphene is the two dimensional crystal of monolayer carbon atomic building, has excellent mechanics, calorifics, electrical and optical properties, at electronic device and field of photoelectric devices, has huge applications potentiality.Existing graphene-based photoelectric sensor not only has advantages of detecting light spectrum wide ranges, responsiveness is high, speed is fast and noise is low, and easily compatible mutually with existing silicon base CMOS integrated circuit technology, realizes production extensive, low-cost sensor array.Up to the present, the research of graphene-based photodetector mainly concentrates on the absorptivity that how to improve Graphene.For example, utilize thermoelectric effect, metal exciton structure, Graphene exciton or for micro-cavity structure etc.Yet the key issue of making the graphene-based photo-detector of hypersensitization is how to realize photoconductive gain, an incident photon can produce a plurality of charge carriers.Yet up to the present, in all Graphene photo-detectors, all do not observe photoconductive gain.And the gain-type photo-detector with ultra high sensitivity only utilizes in avalanche photodide and light multiplier and realized, but these devices are all builds, can not be compatible mutually with existing integrated circuit preparation technology, when application, need to apply very high voltage simultaneously.It is reported, the optotransistor that comprises transistor channel and photocontrol grid has the susceptibility of superelevation in visible wavelength or short-wave infrared (SWIR) scope, and wherein quantum dot is used epitaxially grown III-V compound semiconductor to make.Yet this type of detector need to be operated at ultralow 4K temperature.Meanwhile, the heterojunction phototransistors based on III-V compound semiconductor and the gain of optical field effect transistor are 100 to 1000, and gain band width product is 1 * 10
8hz.These devices rely on epitaxially grown III-V compound semiconductor, thereby it is integrated to have limited the monolithic of itself and existing CMOS integrated circuit, has hindered it for high sensitive detection and imaging system.The photoconductive gain of the Colloidal Quantum Dots photo-detector of report is 100 to 1000 recently, and its gain is mainly subject to the restriction of the low carrier mobility in Colloidal Quantum Dots, and wherein carrier mobility is 1 * 10
-3～1cm
2/ Vs.
Carrier mobility in Graphene FET has surpassed 104cm2/Vs, than high 1 to 2 order of magnitude of the carrier mobility of normal temperature lower mono-crystalline silicon.The conductivity of Graphene raceway groove can also be controlled fast by grid voltage, and successfully for radio-frequency devices.Yet Graphene only can absorb approximately 2.3% incident light, although concerning one way material, be very high absorptivity, be for actual optical detection, the absorptivity of level is nowhere near like this.Certainly, if multi-layer graphene is stacked, can effectively improve absorptivity, but this will inevitably affect transport property and the grid electric field tunable characteristic of Graphene.This just need to improve by other method the absorptivity of Graphene, and light is absorbed by a medium, and photo-generated carrier is transferred in Graphene and transports.
Summary of the invention:
The present invention proposes a kind of novel Graphene mid and far infrared detector device, and introduced its preparation technology.
This device on graphene film layer deposit quantum-dot structure.When in having, infrared or far red light irradiates device, in quantum dot, produce photo-generated carrier, the photo-generated carrier life-span in quantum dot is much larger than the picosecond life-span of photo-generated carrier in Graphene, so the photo-generated carrier in quantum dot has enough time vertically to enter Graphene raceway groove.Photohole injects Graphene, and light induced electron is stayed in quantum dot film.Hole density in raceway groove has increased, so drain-source resistance has reduced.When photohole leaves Graphene raceway groove from drain electrode, another photohole can enter raceway groove from source electrode, to replace original hole.This circulation is continued until when photohole in quantum dot and light induced electron disappear completely by composite action.Because the light induced electron in quantum dot has the very long life-span, Graphene has very high carrier mobility, so this photo-detector has very high gain, and each photon can produce 10
8individual electronics, much larger than before the graphene-based photo-detector that proposes be less than 1 efficiency.
Mid and far infrared detector device of the present invention comprises one deck graphene film, and this film has carried out sensitization processing with Colloidal Quantum Dots.Graphene is carrier transport raceway groove, and quantum dot is photonic absorption material.The raceway groove of phototransistor comprises individual layer or the bilateral graphene film of being modified by quantum dot, and raceway groove is placed on SiO
2on/Si wafer, as shown in Figure 1.In device, Graphene used obtains by standard mechanical stripping technology, and the object of peeling off is highly oriented pyrolytic graphite, and the Graphene of peeling off is transferred on the SiO2/Si substrate with 285nm.By light microscope, find individual layer and double-layer graphite alkene, and carry out the measurement of Raman scattering spectra by RenishawInviaRaman microscope, determine its actual layer number of selected graphene film.With PMMA, as photoresist, make leakage, the source electrode of device by electron beam lithography, drain-source electrode metal is 5nmTi/100nmAu.The Colloidal Quantum Dots of selecting absorbing wavelength infrared or far red light in being, carries out after electrical measurement device, and the mode in channel surface by from level to level deposits quantum dot, thereby has made Graphene mid and far infrared detector.
Infrared Detectors elementary cell of the present invention is one and usings the Graphene infrared electro transistor of Colloidal Quantum Dots layer as light-operated top grid.
The transistorized raceway groove of described Graphene infrared electro comprises individual layer or the double-layer graphite alkene film of being modified by quantum dot.
Described raceway groove is placed on SiO
2on/Si wafer.
Described individual layer or double-layer graphite alkene film obtain by highly oriented pyrolytic graphite is carried out to standard mechanical stripping technology.
The preparation method of described Graphene mid and far infrared detector, in accordance with the following steps:
(1) prepare graphene film: by standard mechanical stripping technology, obtain graphene film, the object of peeling off is highly oriented pyrolytic graphite;
(2) shift graphene film: the Graphene of peeling off is transferred to the SiO with 285nm
2on/Si substrate; By light microscope, find individual layer and double-layer graphite alkene, and carry out Raman scattering spectrometry by microscope, determine the actual layer number of selected graphene film;
(3) making source, drain electrode: with PMMA, as photoresist, make leakage, the source electrode of device by electron beam lithography, leakage, source electrode metal are 5nmTi/100nmAu;
(4) deposit InSb quantum dot: adopt evaporation in inert gas to prepare InSb quantum dot;
(5) select the Colloidal Quantum Dots of absorbing wavelength infrared or far red light in being, device is carried out after electrical measurement, the mode in channel surface by from level to level deposits quantum dot, thereby has made Graphene mid and far infrared detector.
The equipment that described step (4) adopts is low energy Cluster Beam Deposition equipment, after the device of gained in step (3) being placed in the crucible of heating chamber, the InSb polycrystal powder that is 99.999% by purity is placed in silica crucible, opens molecule turbine pump and makes vacuum degree in deposit cavity reach 1.5 * 10
-4pa, heats crucible by non-resistance heater, and because the fusing point of InSb is about 530 ℃, when temperature is elevated to 700 ℃ of left and right, InSb powder smelting becomes the vapour pressure that reaches capacity in material vapour chamber, a large amount of source; Temperature is controlled to 700 ℃, being filled with pressure is the inert gas that 650Pa is pure, and in cooling stick, be filled with liquid nitrogen, rotating cooling stick makes device aim at nozzle, material atom in evaporation cavity is by the cooling nucleation of the collision with Inert gas molecule, nano particle is grown up in polymerization, from aperture ejection, is deposited on device surface; After depositing 3 minutes, remove nozzle; Stop heating, open vacuum valve, room temperature to be evaporated drops to room temperature and settling chamber's pressure returns to after atmospheric pressure, and device for opening takes out InSb quantum dot.
This detector has infrared Absorption rate, internal quantum efficiency, gain and the very low noise level of superelevation, and can select different Colloidal Quantum Dots layer materials according to the difference of surveyed infrared wavelength range.This device is easily compatible mutually with existing silicon base CMOS integrated circuit technology, therefore can realize production extensive, low-cost sensor array.The successful preparation of this Sensitive Apparatus, will lay the foundation for the research of the graphene-based infrared focal plane array transducer of high-performance.
Accompanying drawing explanation:
Fig. 1 is the device architecture figure of Graphene mid and far infrared detector.
Fig. 2 is low energy Cluster Beam Deposition equipment schematic diagram.
Fig. 3 is the absorption spectra property figure of device.
Embodiment:
Below in conjunction with specific embodiment, the invention will be further described, but the present invention is not limited to following examples.
Embodiment: make Infrared Detectors in InSb quantum dot Graphene
In making InSb quantum dot Graphene, during Infrared Detectors, the present invention takes following technical scheme:
1, prepare graphene film: by standard mechanical stripping technology, obtain graphene film, the object of peeling off is highly oriented pyrolytic graphite.
2, shift graphene film: the Graphene of peeling off is transferred on the SiO2/Si substrate with 285nm.By light microscope, find individual layer and double-layer graphite alkene, and carry out the measurement of Raman scattering spectra by RenishawInviaRaman microscope, determine its actual layer number of selected graphene film.
3, making source, drain electrode: with PMMA, as photoresist, make leakage, the source electrode of device by electron beam lithography, leakage, source electrode metal are 5nmTi/100nmAu.
4, deposit InSb quantum dot: adopt evaporation in inert gas to prepare InSb quantum dot, the equipment adopting is low energy Cluster Beam Deposition equipment, as shown in Figure 2.After the device of gained in previous step being placed in the crucible of heating chamber, the InSb polycrystal powder that is 99.999% by purity is placed in silica crucible, opens molecule turbine pump and makes vacuum degree in deposit cavity reach 1.5 * 10
-4pa, heats crucible by non-resistance heater, and because the fusing point of InSb is about 530 ℃, when temperature is elevated to 700 ℃ of left and right, InSb powder smelting becomes the vapour pressure that reaches capacity in material vapour chamber, a large amount of source.Temperature is controlled to 700 ℃, to be filled with pressure be the inert gas that 650Pa is pure (Ar gas) and in cooling stick, be filled with liquid nitrogen, rotating cooling stick makes device aim at nozzle, material atom in evaporation cavity is by the cooling nucleation of the collision with Inert gas molecule, nano particle is grown up in polymerization, from aperture ejection, be deposited on device surface.After depositing 3 minutes, remove nozzle.Stop heating, open vacuum valve, room temperature to be evaporated drops to room temperature and settling chamber's pressure returns to after atmospheric pressure, and device for opening takes out sample.
5, in the InSb quantum dot Graphene completing, the schematic diagram of Infrared Detectors as shown in Figure 1.The absorption spectra property of device as shown in Figure 3, illustrates that this detector can survey middle infrared wavelength.Can find out, by the method for the present embodiment, prepare Infrared Detectors in InSb quantum dot Graphene.
The above, it is only preferred embodiment of the present invention, not the present invention is done to any pro forma restriction, although the present invention discloses as above with preferred embodiment, yet not in order to limit the present invention, any those skilled in the art, do not departing within the scope of technical solution of the present invention, when can utilizing the method for above-mentioned announcement and technology contents to make a little change or being modified to the equivalent embodiment of equivalent variations, in every case be the content that does not depart from technical solution of the present invention, any simple modification of above embodiment being done according to technical spirit of the present invention, equivalent variations and modification, still belong in the scope of technical solution of the present invention.
Claims (6)
1. a Graphene mid and far infrared detector, is characterized in that: this Infrared Detectors comprises one deck graphene film, and its elementary cell is one and usings the Graphene infrared electro transistor of Colloidal Quantum Dots layer as light-operated top grid.
2. Graphene mid and far infrared detector as claimed in claim 1, is characterized in that: the transistorized raceway groove of described Graphene infrared electro comprises individual layer or the double-layer graphite alkene film of being modified by quantum dot.
3. Graphene mid and far infrared detector as claimed in claim 2, is characterized in that: described raceway groove is placed on SiO
2on/Si wafer.
4. Graphene mid and far infrared detector as claimed in claim 2, is characterized in that: described individual layer or double-layer graphite alkene film obtain by highly oriented pyrolytic graphite is carried out to standard mechanical stripping technology.
5. the preparation method of Graphene mid and far infrared detector as claimed in claim 1, is characterized in that, in accordance with the following steps:
(1) prepare graphene film: by standard mechanical stripping technology, obtain graphene film, the object of peeling off is highly oriented pyrolytic graphite;
(2) shift graphene film: the Graphene of peeling off is transferred to the SiO with 285nm
2on/Si substrate; By light microscope, find individual layer and double-layer graphite alkene, and carry out Raman scattering spectrometry by microscope, determine the actual layer number of selected graphene film;
(3) making source, drain electrode: with PMMA, as photoresist, make leakage, the source electrode of device by electron beam lithography, leakage, source electrode metal are 5nmTi/100nmAu;
(4) deposit InSb quantum dot: adopt evaporation in inert gas to prepare InSb quantum dot;
The Colloidal Quantum Dots of selecting absorbing wavelength infrared or far red light in being, carries out after electrical measurement device, and the mode in channel surface by from level to level deposits quantum dot, thereby has made Graphene mid and far infrared detector.
6. preparation method as claimed in claim 5, it is characterized in that: the equipment that described step (4) adopts is low energy Cluster Beam Deposition equipment, after the device of gained in step (3) being placed in the crucible of heating chamber, the InSb polycrystal powder that is 99.999% by purity is placed in silica crucible, opens molecule turbine pump and makes vacuum degree in deposit cavity reach 1.5 * 10
-4pa, heats crucible by non-resistance heater, and because the fusing point of InSb is about 530 ℃, when temperature is elevated to 700 ℃ of left and right, InSb powder smelting becomes the vapour pressure that reaches capacity in material vapour chamber, a large amount of source; Temperature is controlled to 700 ℃, being filled with pressure is the inert gas that 650Pa is pure, and in cooling stick, be filled with liquid nitrogen, rotating cooling stick makes device aim at nozzle, material atom in evaporation cavity is by the cooling nucleation of the collision with Inert gas molecule, nano particle is grown up in polymerization, from aperture ejection, is deposited on device surface; After depositing 3 minutes, remove nozzle; Stop heating, open vacuum valve, room temperature to be evaporated drops to room temperature and settling chamber's pressure returns to after atmospheric pressure, and device for opening takes out InSb quantum dot.
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Cited By (41)
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| CN103911152A (en) * | 2014-03-28 | 2014-07-09 | 中国科学院上海技术物理研究所 | Method for preparing InAs0.2Sb0.8 quantum dot |
| CN103972330A (en) * | 2014-05-23 | 2014-08-06 | 浙江理工大学 | Manufacturing method of CdS quantum dot photoelectric detection unit |
| CN104157720A (en) * | 2014-08-08 | 2014-11-19 | 浙江大学 | Graphene silicon-based avalanche photodetector with mixed structure and manufacturing method |
| CN104167451A (en) * | 2014-07-07 | 2014-11-26 | 北京大学 | Infrared imaging detector carbon nanotube based on quantum dots and preparation method for the same |
| CN104568809A (en) * | 2015-02-02 | 2015-04-29 | 云南大学 | Intermediate infrared molecular vibration spectrum sensing method based on graphene array structure |
| CN104600131A (en) * | 2015-01-16 | 2015-05-06 | 浙江大学 | Graphene/silicon photodetector with passivated interface and preparation method thereof |
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