CN105881190A - Control method for computer hard disk substrate roughness - Google Patents
Control method for computer hard disk substrate roughness Download PDFInfo
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- CN105881190A CN105881190A CN201410597515.4A CN201410597515A CN105881190A CN 105881190 A CN105881190 A CN 105881190A CN 201410597515 A CN201410597515 A CN 201410597515A CN 105881190 A CN105881190 A CN 105881190A
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- control method
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- roughness
- disk substrate
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
The invention discloses a control method for computer hard disk substrate roughness. The control method comprises the following steps that raw materials are expressed by weight percentage, SiO2 with the particle diameter being 15-40 nm is diluted with deionized water, and the content of the deionized water is 5%-50%; 1%-10% of alcohol ether type surfactants and 1%-10% of FA/O chelating agents are added while stirring is conducted; the pH value is made to be 9.5-10.5 with pH conditioning agents; 5-15 ml of oxidizing agents are added; and under the polishing process conditions that the temperature is 30-40 DEG C, the rotating speed is 30-80 rpm and the flow rate is 0-0.05 MPa and 1 L/min-5 L/min, a substrate is polished on a polishing machine with the polishing liquid for 8-10 min. According to the control method for computer hard disk substrate roughness, cleaning is easy, low pollution is achieved, and the surface roughness of the magnetic disk substrate of a storage hard disk is reduced.
Description
Technical field
The present invention relates to computer storage hard disk manufacturing technology field, more specifically, relate to a kind of for
The method reducing hard disc of computer NiP substrate chemical mechanical polishing roughness.
Background technology
The dish substrate that one flat smooth does not has any surface defect is the basis that magnetosphere stores data, raising dish base
Sheet surface smoothness the most just improves memory density.Chemically mechanical polishing
(ChemicalMechanical Polishing is called for short CMP) technology can be simultaneously full from processing characteristics and speed
The processing request of pedal disk substrate, and on lapped face, form bright and clean flat surfaces, it is to be capable of at present
The best approach of leveling.
In order to reduce the smallest record area of hard disk drive, improve hard-disk capacity, it is desirable to magnetic head is situated between with disk magnetic
Distance between matter reduces further, so the requirement to magnetic disk surface quality is more and more higher.Work as magnetic disk substrate
When surface roughness, percent ripple are relatively big or there are other surface defects, usually cause magnetic head, the damage of disk shows
As, thus cause hard disk cannot normally work or read and write the loss of data.So, complete manufacture hand disk wafer
, hand disk wafer need to be chemically-mechanicapolish polished before, make substrate surface roughness reach minimum, the most also must
The surface defect such as cut, turned-down edge must be removed.
At present, most hard disks uses the aluminium alloy substrate of plating NiP to manufacture hand disk wafer, is thrown by chemical machinery
After light, the surface roughness obtained is at 0.20 ran.Along with the hard disk manufacturing business base to memory, hard disk
The raising of sheet suface processing quality, the existing chemically mechanical polishing getable final surface roughness of polishing fluid
And the control of surface defect, it is impossible to meet the needs of memory, hard disk.Therefore, deposit along with hard-disk capacity and disk
The raising of storage density requirements, improves hand disk wafer chemical-mechanical polishing mathing reason, solves substrate surface roughness, will
Become problem demanding prompt solution in a very long time from now on.
Summary of the invention
The technical problem to be solved is, overcomes the deficiencies in the prior art, it is provided that the while of a kind of
The method meeting the magnetic disk substrate surface roughness reducing memory, hard disk of easy cleaning, low stain requirement.
The control method of roughness of computer hard disk substrate of the present invention, comprises the following steps, and wherein raw material is weight
%:
(1) by the SiO of particle diameter 15～40nm2Dilute with deionized water, deionized water content 5～50%；
(2) 1～the alcohol ether surfactants of 10% is added while stirring；
(3) 1～the FA/O chelating agen of 10% is added while stirring；
(4) adjusting above-mentioned solution by pH adjusting agent makes pH value in the range of 9.5～10.5；
(5) after having adjusted pH, the oxidant of 5～15ml is added；
(6) use above-mentioned polishing fluid 30～40 DEG C of temperature, 30～80rpm rotating speed, 0～0.05MPa,
Under 1L/min-5L/min flow ground polishing technological conditions, buffing machine is polished to substrate 8～10min.
PH value regulator of the present invention and chelating agen are hydroxyl many amines organic base, such as ethylenediaminetetraacetic acid four
(tetrahydroxyethyl-ethylene diamine).
Alcohol ether surfactants of the present invention be FA/O surfactant,
OII-7((C10H21-C6H4-O-CH2CH2O)7-H)、OII-10((C10H21-C6H4-O-CH2CH2O)10-H)、
O-20(C12-18H25-37-C6H4-O-CH2CH2O)70-H), one or more compound uses of JFC.
Oxidant of the present invention is peroxide solvable under alkaline medium, for hydrogen peroxide or peroxide Jiao's phosphorus
Acid sodium or carbamide peroxide.
Beneficial effect of the present invention and advantage:
1, in the present invention, FA/O activating agent adds high low selection ratio, greatly reduces surface tension, reduces
Damage layer, improve the homogeneity of substrate surface, concave-convex surface difference is substantially reduced, effectively raise friendship
Throw-over rate, enhances transport process, reaches high smooth high smooth finish surface, reduces the coarse of substrate surface simultaneously
Degree.
2, in polishing process, in the present invention, the addition of FA/O chelating agen makes Ni easily generate macromole product
Thing and be dissolved in water, makes product can depart from finished surface, complexation and chelation under little mechanism,
Phosphorus generates phosphate soluble in water under the effect of alkali simultaneously.And two kinds of formations are stable, it is easy to clean；
The effect of polishing fluid pH adjusting agent and buffer agent can also be played simultaneously, so can improve the removal rate of polishing,
Surface roughness can be reduced in finite time making substrate surface.
3, SiO in the present invention2Its particle diameter of abrasive material little (15～40nm), concentration high (40～50%), hardness little 6～
7 (little to substrate damage degree), good dispersion degree, it is possible to reach two-forty high smooth low roughness polishing, effectively
Solving aluminium sesquioxide is the scuffing caused during abrasive material and the rear problem cleaning difficulty.
4, the selection of the process conditions that low pressure (upper dish deadweight, 0～0.05MPa) polishes, effectively avoid by
In the surface damage that pressure is brought, thus reduce surface roughness.
5, the selection of flow big 1L/min-5L/min process conditions, effectively provides polish abrasive, and
Quickly take away product, provide guarantee for improving polishing effect and reduction roughness.
The major function of glossing of the present invention is as follows:
30～40 DEG C can be improved chemical action, it is achieved high chemical reaction rate, again can under low mechanism,
Realize being rapidly separated of product, accelerate the process of quality transmission, improve the homogeneity of substrate surface, make
Obtain concave-convex surface difference to be substantially reduced, thus realize the reduction of roughness.
30～80rpm rotating speeds ensure that the timely removal of product, and the timely of new liquid supplements, and can protect
The concordance of card polishing.
0～0.05MPa scope advantageously reduces the mechanism scuffing to surface, by additional or only from
The applying of heavy sensation of the body amount, on the basis of reaching certain removal amount, reaches the perfectionization of surface roughness.
1L/min-5L/min flow is capable of disengaging and the supply of new liquid of product.
Current international level is: surface roughness is more than 0.2nm；The inventive method surface roughness can
Reach 0.1nm.
Detailed description of the invention
Below in conjunction with embodiment, the present invention is described further.
Embodiment 1:
(1) by the SiO of particle diameter 15～20nm21000g deionized water 50g dilutes；
(2) the FA/O surfactant of 4g is added while stirring；
(3) the FA/O chelating agen of 5g is added while stirring；
(4) adjusting above-mentioned solution with ethylenediaminetetraacetic acid four (tetrahydroxyethyl-ethylene diamine) makes pH value 9.5～10.5
In the range of；
(5) after having adjusted pH, the hydrogen peroxide oxidant of 10ml is added；
(6) use above-mentioned polishing fluid at 30～40 DEG C of temperature, 30～40rpm rotating speed, 1L/min-2L/min stream
Under the polishing technological conditions of amount, substrate being polished on buffing machine 8～10min, the roughness reached is
0.15nm。
Embodiment 2:
(1) by the SiO of particle diameter 30～40nm2500g deionized water 500g dilutes；
(2) the FA/O surfactant of 10g is added while stirring；
(3) the FA/O chelating agen of 10g is added while stirring；
(4) adjusting above-mentioned solution with ethylenediaminetetraacetic acid four (tetrahydroxyethyl-ethylene diamine) makes pH value 9.5～10.5
In the range of；
(5) after having adjusted pH, the sodium peroxypyrophosphate solution oxide agent of 5ml is added；
(6) use above-mentioned polishing fluid 40～50 DEG C of temperature, 50～60rpm rotating speed, 0.05MPa,
Under the polishing technological conditions of 3L/min-4L/min flow, buffing machine is polished to substrate 8～10min,
The roughness reached is 0.12nm.
Embodiment 3:
(1) by the SiO of particle diameter 20～30nm22000g deionized water 1000g dilutes；
(2) the JFC surfactant of 30g is added while stirring；
(3) the FA/O chelating agen of 30g is added while stirring；
(4) adjusting above-mentioned solution with ethylenediaminetetraacetic acid four (tetrahydroxyethyl-ethylene diamine) makes pH value 9.5～10.5
In the range of；
(5) after having adjusted pH, the hydrogen peroxide oxidant of 15ml is added；
(6) use above-mentioned polishing fluid 40～50 DEG C of temperature, 70～80rpm rotating speed, 0.02MPa,
Under the polishing technological conditions of 4L/min-5L/min flow, buffing machine is polished to substrate 8～10min,
The roughness reached is 0.1nm.
Claims (4)
1. a control method for roughness of computer hard disk substrate, is characterized in that, comprises the following steps, wherein
Raw material is weight %:
(1) by the SiO of particle diameter 15～40nm2Dilute with deionized water, deionized water content 5～50%；
(2) 1～the alcohol ether surfactants of 10% is added while stirring；
(3) 1～the FA/O chelating agen of 10% is added while stirring；
(4) adjusting above-mentioned solution by pH adjusting agent makes pH value in the range of 9.5～10.5；
(5) after having adjusted pH, the oxidant of 5～15ml is added；
(6) use above-mentioned polishing fluid 30～40 DEG C of temperature, 30～80rpm rotating speed, 0～0.05MPa,
Under the polishing technological conditions of 1L/min-5L/min flow, buffing machine is polished to substrate 8～10min.
Control method the most according to claim 1, is characterized in that, described pH value regulator is that hydroxyl is many
Amine organic base, for ethylenediaminetetraacetic acid four (tetrahydroxyethyl-ethylene diamine).
Control method the most according to claim 1, is characterized in that, described alcohol ether surfactants is
FA/O surfactant, OII-7((C10H21-C6H4-O-CH2CH2O)7-H)、
OII-10((C10H21-C6H4-O-CH2CH2O)10-H)、O-20(C12-18H25-37-C6H4-O-CH2CH2O) 70-H), JFC
One or more.
Control method the most according to claim 1, is characterized in that, described oxidant is under alkaline medium
Solvable peroxide, for hydrogen peroxide or sodium peroxypyrophosphate or carbamide peroxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410597515.4A CN105881190A (en) | 2014-10-22 | 2014-10-22 | Control method for computer hard disk substrate roughness |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410597515.4A CN105881190A (en) | 2014-10-22 | 2014-10-22 | Control method for computer hard disk substrate roughness |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105881190A true CN105881190A (en) | 2016-08-24 |
Family
ID=56697629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410597515.4A Pending CN105881190A (en) | 2014-10-22 | 2014-10-22 | Control method for computer hard disk substrate roughness |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105881190A (en) |
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2014
- 2014-10-22 CN CN201410597515.4A patent/CN105881190A/en active Pending
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Application publication date: 20160824 |