CN105870315A - Polarization-sensitive efficient superconducting nanowire single photon detector and design method therefor - Google Patents
Polarization-sensitive efficient superconducting nanowire single photon detector and design method therefor Download PDFInfo
- Publication number
- CN105870315A CN105870315A CN201610208024.5A CN201610208024A CN105870315A CN 105870315 A CN105870315 A CN 105870315A CN 201610208024 A CN201610208024 A CN 201610208024A CN 105870315 A CN105870315 A CN 105870315A
- Authority
- CN
- China
- Prior art keywords
- nbn
- ring resonator
- antisymmetry
- nano wire
- split
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002070 nanowire Substances 0.000 title claims abstract description 78
- 230000010287 polarization Effects 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000013461 design Methods 0.000 title claims abstract description 10
- 238000010168 coupling process Methods 0.000 claims abstract description 41
- 238000005859 coupling reaction Methods 0.000 claims abstract description 41
- 230000008878 coupling Effects 0.000 claims abstract description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000010931 gold Substances 0.000 claims abstract description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052737 gold Inorganic materials 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract 3
- 238000002835 absorbance Methods 0.000 claims description 26
- 230000005684 electric field Effects 0.000 claims description 26
- 238000010276 construction Methods 0.000 claims description 14
- 230000001413 cellular effect Effects 0.000 claims description 9
- 238000005286 illumination Methods 0.000 claims description 8
- 230000008033 biological extinction Effects 0.000 claims description 7
- 230000000737 periodic effect Effects 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 241000208340 Araliaceae Species 0.000 claims 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 claims 1
- 235000003140 Panax quinquefolius Nutrition 0.000 claims 1
- 235000008434 ginseng Nutrition 0.000 claims 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 238000000711 polarimetry Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/20—Permanent superconducting devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/20—Design optimisation, verification or simulation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4413—Type
- G01J2001/442—Single-photon detection or photon counting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Theoretical Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Geometry (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Evolutionary Computation (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention discloses a polarization-sensitive efficient superconducting nanowire single photon detector and a design method therefor. The detector comprises a silicon substrate, a gold film reflective layer, a silicon dioxide medium cavity, an NbN nanowire and a coupling anti-symmetric split ring resonator, wherein the silicon substrate, the gold film reflective layer, the silicon dioxide medium cavity and the coupling anti-symmetric split ring resonator are arranged from the bottom up in sequence; the NbN nanowire is positioned in the interior of the silicon dioxide medium cavity; the NbN nanowire comprises multiple periodically-arranged unit structures; and the coupling anti-symmetric split ring resonator is periodically arranged. The invention also discloses a design method for the detector. The detector provided by the invention has a simple and creative structure, high width of the adopted superconducting material NbN nanowire, high duty ratio, high detection efficiency on near infrared wave single photons, and high counting speed.
Description
Technical field
The invention belongs to the fields such as quantum communications, remote sensing and bio-imaging, efficiently surpassing particularly to a kind of polarization sensitive
Lead nanowire single photon detector and method for designing thereof.
Background technology
Compared to semiconductor detector, work in the superconducting nano-wire single-photon detector of near infrared band
(Superconducting Nanowire Single Photon Detector is called for short SNSPD) has efficient, quick, low
The advantage such as dark counting and low jitter.This detector, due to the structure of its meander line, presents the polarization selectivity of intrinsic.When
When we need the strength investigation carrying out light, we to reduce this polarization selectivity as far as possible.But when we utilize light
The encryption of polarization characteristic such as quantum key, or measure the polarization characteristic of light, such as polarimetry and the scattering medium of remotely sensed image
In polarization imaging, we need again the detector of a high polarization sensitive.
Generally with SNSPD, to TE ripple (direction of an electric field is parallel to nano wire) and TM ripple, (direction of an electric field is perpendicular to nanometer for we
Line) the ratio of absorbance represent its polarization sensitive, i.e. polarization extinction (Polarization Extinction
Ratio, is called for short PER).PER value this device of the highest explanation has higher polarization selectivity.At present, Shanghai micro-system outstanding
Vertical magnitude people studies SNSPDs, the back surface incident Si-λ/4SiO2-NbN chamber of high PER, by reducing NbN nanowire width and subtracting
It is the highest by 22 that little dutycycle improves PER(), but cause TE absorbance too low (12%).For keeping high PER to improve TE ripple simultaneously
Absorbing, M á ria Csete et al. increases nano-cavity optical grating construction on NbN nano wire wide for 100nm, and during dutycycle 0.13, TE inhales
It is received in less than 45%, but the technology difficulty of this structure is big, as a consequence it is hardly possible to realize, be highly detrimental to the application of device.
Summary of the invention
Goal of the invention: the problem and shortage existed for above-mentioned prior art, it is an object of the invention to provide a kind of polarization
Sensitive high-efficiency superconducting nanowire single photon detector and method for designing, by utilizing metamaterial structure coupling antisymmetry to divide
Slotted ring resonator (Coupling Anti-symmetric Split Ring Resonator, be also called for short CASRR), to TE ripple and
TM wave polarization sensitivity improves the polarization characteristic of NbN meander line itself, is incorporated into the height with cavity resonator structure simultaneously
In effect SNSPD, while obtaining high polarization sensitive characteristic, obtain high absorbance.Present configuration is simple, novel, uses
Superconductor NbN nanowire width big, dutycycle is high, and high to the single photon detection efficiency of near-infrared ripple, counting rate is fast.
Technical scheme:
For achieving the above object, the high-efficiency superconducting nanometer that the first technical scheme is a kind of polarization sensitive that the present invention provides
Line single-photon detector, including silicon base, gold film reflecting layer, silica dioxide medium chamber, NbN nano wire and coupling antisymmetry division
Ring resonator, is followed successively by described silicon base, gold film reflecting layer, silica dioxide medium chamber and coupling antisymmetry the most from the bottom to top
Split-ring resonator, described NbN nano wire is positioned at silica dioxide medium intracavity portion, and described NbN nano wire includes that multiple cycle arranges
The cellular construction of row, described coupling antisymmetry Split-ring resonator is periodic arrangement.
Setting of the high-efficiency superconducting nanowire single photon detector that the second technical scheme is polarization sensitive that the present invention provides
Meter method, uses FDTD solutions simulation software, and method for designing comprises the steps: that (1) designs a coupling antisymmetry
Split-ring resonator, resonant frequency is near 1550nm;(2) described coupling antisymmetry Split-ring resonator is placed in 1/2nd
On the silica dioxide medium chamber of wavelength, the bottom in silica dioxide medium chamber is the golden film reflecting layer that 100nm is thick, gold film reflecting layer
It is positioned on the thick silicon base of 1mm;When incident illumination direction of an electric field is parallel to the axis of symmetry coupling antisymmetry Split-ring resonator,
Finding silica dioxide medium intracavity electric field is the position of zero;(3) it is at zero, to insert a NbN nano wire at electric field, described NbN nanometer
Line includes the cellular construction of multiple periodic arrangement, and is perpendicular to couple the axis of symmetry of antisymmetry Split-ring resonator;(4) mobile
The coupling antisymmetry Split-ring resonator on upper strata, the distance between fine setting coupling antisymmetry Split-ring resonator and NbN nano wire
d;(5) change the two i.e. L of brachium sum L(of coupling antisymmetry Split-ring resonator simultaneously1+L2), it is ensured that symmetry is constant, i.e. L1/
L=0.58, absorption when the incident optical electric field of record is oriented parallel to NbN nano wire incidence and when being perpendicular to NbN nano wire incidence
Rate;(6) repeat step (4) and (5), obtain the detector absorbance to the incident illumination of two kinds of polarised directions about coupling antisymmetry
Split-ring resonator and the distance of NbN nano wire, the two-dimentional equal pitch contour of the two brachium sums coupling antisymmetry Split-ring resonator
Figure;(7) image that comparison step (6) obtains, finds absorbance and the optimal parameter of polarization extinction;(8) last in level side
To the position of mobile NbN nano wire, optimum structural parameter.The concrete grammar of optimum structural parameter is, optimal at NbN nano wire
Measure Electric Field Distribution in the x-y plane of z coordinate value place, NbN nano wire be placed on the position that x-y plane internal electric field is the strongest,
Increase the polarization extinction that absorbance keeps bigger simultaneously.
Beneficial effect: the most than ever, simple in construction is novel for the detector of the polarization sensitive of this structure, is improving the same of PER
Time maintain high absorbance, nano wire has the advantage that width value is big and dutycycle is high so that this detector has preparation
Simply, the advantage that detection efficient is high and response speed is fast.
Accompanying drawing explanation
Fig. 1 is the structural representation of the high-efficiency superconducting nanowire single photon detector of polarization sensitive;
Fig. 2 is the structural representation of coupling antisymmetry Split-ring resonator;
Fig. 3 is that cellular construction by silica dioxide medium intracavity Electric Field Distribution when TM ripple or TE ripple incidence and regulates showing of parameter
It is intended to;
Fig. 4 is coupling antisymmetry Split-ring resonator transmission spectral line under two kinds of polarized light incidence;
Fig. 5 is the TE absorbance distance about d(metamaterial structure Yu nano wire of detector), two brachiums of L(Meta Materials it
With) contour map;
Fig. 6 is the PER distance about d(metamaterial structure Yu nano wire of detector), two brachium sums of L(Meta Materials) etc.
High line chart;
The image that Fig. 7 is the TE absorbance of detector and PER changes with the change of nano wire x coordinate value;
Fig. 8 is detector absorption line under two kinds of polarized light incidence.
Detailed description of the invention
Below in conjunction with the accompanying drawings and specific embodiment, it is further elucidated with the present invention, it should be understood that these embodiments are merely to illustrate
The present invention rather than the range of the restriction present invention, after having read the present invention, those skilled in the art are to the present invention
The amendment of the various equivalent form of values all fall within the application claims limited range.
One, the high-detectivity detector of novel polarization sensitive is designed
For designing the structure of the high-detectivity detector of novel polarization sensitive, have studied the detector of a lot of polarization sensitive.But before
Structure otherwise simple in construction but absorbance is too low, PER is the highest, otherwise absorbance and PER the most highly desirable, but structure is multiple
Miscellaneous, it is difficult to preparation.It is known that the absorbance of NbN nano wire is determined by its internal electric field size, then by the definition of PER
(SNSPD ratio to the absorbance of TE ripple and TM ripple), it can be seen that reduce the absorption to TM ripple of the NbN Nano-structure, i.e. weakens TM
NbN nano wire internal electric intensity during ripple incidence, is the key improving PER, and for this, we devise a kind of coupling antisymmetry and divide
Slotted ring resonator structure, this structure has different transmission characteristics to TE ripple and TM ripple, weakens the nano wire absorption to TM ripple, increases
Its absorption to TE ripple strong, thus obtain the highest PER.Accordingly, we devise what a kind of simple metamaterial structure loaded
Metal-dielectric-metal cavity resonator structure, schematic diagram is as it is shown in figure 1, the overall structure of this detector is Si-Au-SiO2-NbN-
CASRR, wherein NbN nano wire is embedded in SiO2In medium, being period profile in x-axis, the cycle is that the dotted line frame in 600nm(Fig. 1 is
It is a cycle), the dutycycle ratio of x direction cycle (nanowire width with) is 0.2.Metamaterial structure CASRR thereon is in x-axis
With y-axis direction all in period profile, the cycle is, as in figure 2 it is shown, b=335nm, L1=145nm, L2=
105nm, s=80nm, w=50nm.This detector is up to 85.5%, to 1550nm to the TE absorbing incident light rate of 1550nm wavelength
The TM absorbing incident light rate of wavelength is almost nil, and PER is 585.This NbN structure is by the rivulose Nano-structure of periodic arrangement
Composition, selects this structure to main reason is that the area that can increase search coverage, it is achieved single-mode fiber and search coverage
Direct-coupling, is greatly improved the detection efficient of period.Additionally, this structure directly can be write by the electron beam of rectangular patterns
Enter, it is simple to experiment.The metamaterial structure of the superiors uses and couples antisymmetric Split-ring resonator structure, and this structure exists
Resonance near 1550nm wavelength, converges energy, can regulate surrounding electric field distribution, TE ripple and TM ripple be had natural passing through simultaneously
Selectivity, and structure easily makes.
For determining the most optimized parameter of this structure, first enter with FDTD solutions software based on finite time-domain calculus of finite differences
The a large amount of analog simulations of row, z direction is set to PML border, x Yu y direction is disposed as cycle boundary, electromagnetic field transmit direction along
Z direction.Thickness d=the 1mm of silicon base in Fig. 1, the thickness in gold film reflecting layer is 100nm, gold film reflecting layer and NbN nano wire it
Between the thickness that silicon dioxide thickness is 510nm, NbN nano wire be 6nm, width 120nm, each cellular construction interval 480nm,
The thickness of metamaterial structure (i.e. coupling antisymmetry Split-ring resonator) is between 100nm, NbN nano wire and metamaterial structure
Silicon dioxide thickness is to be in the cycle of 45nm, NbN nano wire and metamaterial structure。
Two, the method for designing of the high-detectivity detector of polarization sensitive
The method that design this new detector is described below:
(1) design polarization selectivity structure Coupling antisymmetry Split-ring resonator, its resonance wavelength is at 1550nm.Such as Fig. 3
Shown in, for TE ripple, its transmitted spectrum has resonance peak at 1550nm, and for TM ripple, transmission coefficient is at us
1 it is almost in frequency range interested;
(2) dielectric thickness presetting the silica dioxide medium chamber that metamaterial structure loads is 555nm, and look for
The electric field null of the TM ripple in medium, i.e. the coordinate position in z direction, as shown in Figure 4, during TM ripple incidence, electric field is the z seat of zero
It is designated as 510nm, and now TE ripple electric field at z=510nm being not zero, it is ensured that certain TE absorbance and higher
PER;
(3) according to the parameter in the structure of Fig. 1 and step (1) and (2), detector cells structural model, wherein 120nm width are built
The NbN nano wire of 600nm length is placed in the electric field null in (2), and the boundary condition in x direction and y direction is disposed as periodic condition;
(3) the coupling antisymmetry Split-ring resonator of the superiors, fine setting coupling antisymmetry Split-ring resonator and NbN nanometer are moved
Shown in distance d(between line cellular construction as lowermost in Fig. 4 parameter);
(4) change two brachium sums L(such as Fig. 4 lowermost cellular construction parameter of coupling antisymmetry Split-ring resonator simultaneously
Shown in), absorbance when the incident optical electric field of record is oriented parallel to nano wire incidence and when being perpendicular to nano wire incidence;
(5) repeat step (3) and (4), obtain detector and the absorbance of the incident illumination of two kinds of polarised directions is opposed about coupling
Claim distance d of Split-ring resonator and NbN nano wire, couple the two dimension etc. of two brachium sums L of antisymmetry Split-ring resonator
High line chart, as it is shown in figure 5, calculate the PER X-Y scheme about d and L, as shown in Figure 6 simultaneously;
(6) image that comparison step (5) obtains, finds absorbance and optimal parameter .d=45nm of PER, and during L=305nm, TE inhales
Yield is 84.3%, and PER is up to 522;
(7) finally moving in the horizontal direction the position of NbN nano wire, optimize structure. the method for optimum structural parameter is, at NbN
Measure Electric Field Distribution in the optimal z coordinate value place x-y plane of nano wire, NbN nano wire is placed on x-y plane internal electric field the strongest
Position, the polarization extinction that the absorbance to TE ripple keeps bigger simultaneously can be increased.As it is shown in fig. 7, nano wire x-axis coordinate
When value is for 20nm, i.e., during NbN nano wire deviation metamaterial structure space center 20nm, absorbance is 85.5% to the maximum, and PER is permissible
Bring up to 585, as shown in Figure 8.
Three, the tolerance analysis of the high-detectivity detector of polarization sensitive
Considering from technological angle, we have also carried out the analysis of tolerance. and simulation result shows, the z coordinate deviation of NbN nano wire
On absorbance impact less than 4.3% within optimum 10nm, and bigger on PER impact.For ensureing that the PER, NbN of more than 400 receive
The z coordinate off-target point of rice noodle should control within 5nm;And as can be seen from Figure 7 NbN x coordinate value deviation 20nm with
In, the error of absorbance is less than 4%, and PER is more than 500.
Four, the high-detectivity detector experimental result of polarization sensitive and discussion
The topmost application aspect of efficient single-photon detector of the polarization sensitive of present invention design is quantum communications, remote sensing and life
The fields such as thing imaging, they require that this detector possesses the highest polarization extinction and preferable absorptivity.As it can be observed in the picture that
The detector of our design of Simulation is up to 85.5% to the absorbance of the incident illumination that 1550nm direction of an electric field is parallel to nano wire, right
1550nm direction of an electric field is perpendicular to the incident illumination of nano wire and hardly picks up, and PER is up to 585, fully meets the needs of application.
It addition, the high-detectivity detector of the polarization sensitive of the present invention, the polarization sensitive of the optical grating construction of relative document report is visited
Survey device, simple in construction, reduce technology difficulty, and front incidence can improve the coupling efficiency of incident illumination.
In a word, we utilize the polarization sensitive high-detectivity detector that metamaterial structure designs, and are mainly reflected in novel structure, former
Reason uniqueness, the advantages such as the selection of material is superior, and preparation method is convenient, and absorbance is high, PER is big.In being actually needed, according to this patent
In method for designing, change structure parameter, the detector of other resonant frequencies can be obtained.Therefore, will in superconduction and
Other type single-photon detector is used widely.
Claims (10)
1. the high-efficiency superconducting nanowire single photon detector of a polarization sensitive, it is characterised in that include silicon base, gold film reflection
Layer, silica dioxide medium chamber, NbN nano wire and coupling antisymmetry Split-ring resonator, be followed successively by described silicon the most from the bottom to top
Substrate, gold film reflecting layer, silica dioxide medium chamber and coupling antisymmetry Split-ring resonator, described NbN nano wire is positioned at two
Silica medium intracavity portion, described NbN nano wire includes the cellular construction of multiple periodic arrangement, described coupling antisymmetry splitting ring
Resonator is periodic arrangement.
The high-efficiency superconducting nanowire single photon detector of polarization sensitive the most according to claim 1, it is characterised in that described coupling
The thickness closing antisymmetry Split-ring resonator is 100nm.
The high-efficiency superconducting nanowire single photon detector of polarization sensitive the most according to claim 1, it is characterised in that described
NbN is superconduction NbN, and the thickness of described NbN nano wire is 6nm, and width is 120nm, each described cellular construction interval 480nm.
The high-efficiency superconducting nanowire single photon detector of polarization sensitive the most according to claim 1, it is characterised in that described gold
The thickness in silica dioxide medium chamber filled between film reflecting layer and NbN nano wire is 510nm, NbN nano wire and couple opposition
The thickness in the silica dioxide medium chamber filled between Split-ring resonator is called 45nm.
The high-efficiency superconducting nanowire single photon detector of polarization sensitive the most according to claim 1, it is characterised in that described gold
The thickness in film reflecting layer is 100nm.
The high-efficiency superconducting nanowire single photon detector of polarization sensitive the most according to claim 1, it is characterised in that described coupling
Closing antisymmetry Split-ring resonator distribution period both horizontally and vertically is, described NbN nanometer
Line distribution period in the horizontal direction is 600nm.
7. the method for designing of the high-efficiency superconducting nanowire single photon detector of a polarization sensitive, it is characterised in that use FDTD
Solutions simulation software, method for designing comprises the steps: that (1) designs a coupling antisymmetry Split-ring resonator, resonance
Frequency is near 1550nm;(2) silicon dioxide that described coupling antisymmetry Split-ring resonator is placed in 1/2nd wavelength is situated between
On matter chamber, the bottom in silica dioxide medium chamber is the golden film reflecting layer that 100nm is thick, and described gold film reflecting layer is positioned at 1mm thickness
On silicon base;When incident illumination direction of an electric field is parallel to the axis of symmetry coupling antisymmetry Split-ring resonator, find titanium dioxide
Silicon dielectric cavity internal electric field is the position of zero;(3) being to insert a NbN nano wire at zero at electric field, described NbN nano wire includes multiple
The cellular construction of periodic arrangement, and it is perpendicular to couple the axis of symmetry of antisymmetry Split-ring resonator;(4) coupling of the superiors is moved
Antisymmetry Split-ring resonator, distance d between fine setting coupling antisymmetry Split-ring resonator and NbN nano wire;(5) change simultaneously
Becoming two brachium sums L of coupling antisymmetry Split-ring resonator, it is ensured that symmetry is constant, the incident optical electric field of record is oriented parallel to
Absorbance during NbN nano wire incidence and when being perpendicular to NbN nano wire incidence;(6) repeat step (4) and (5), obtain detector
To the absorbance of the incident illumination of two kinds of polarised directions about coupling antisymmetry Split-ring resonator and the distance of NbN nano wire, coupling
Close the two-dimentional contour map of two brachium sums of antisymmetry Split-ring resonator;(7) image that comparison step (6) obtains, finds
Absorbance and the optimal parameter of polarization extinction;(8) finally move in the horizontal direction the position of NbN nano wire, optimize structure ginseng
Number.
The method for designing of the high-efficiency superconducting nanowire single photon detector of polarization sensitive, its feature the most according to claim 7
Being, in described step (8), the method for optimum structural parameter is, in the optimal z coordinate value place x-y plane of NbN nano wire
Measure Electric Field Distribution, NbN nano wire is placed on the position that x-y plane internal electric field is the strongest.
The method for designing of the high-efficiency superconducting nanowire single photon detector of polarization sensitive, its feature the most according to claim 7
Being, in described step (1), the thickness of coupling antisymmetry Split-ring resonator is 100nm.
The method for designing of the high-efficiency superconducting nanowire single photon detector of polarization sensitive, its feature the most according to claim 7
It is, in described step (2) and step (3), at 1550nm wavelength, Si, SiO2, the refractive index of Au, NbN is respectively 3.628,
1.444,0.559+9.81i and 5.23+5.82i;Au and NbN refractive index at other frequencies uses Lorenz-Drude mould
Type matching.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610208024.5A CN105870315A (en) | 2016-04-05 | 2016-04-05 | Polarization-sensitive efficient superconducting nanowire single photon detector and design method therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610208024.5A CN105870315A (en) | 2016-04-05 | 2016-04-05 | Polarization-sensitive efficient superconducting nanowire single photon detector and design method therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
CN105870315A true CN105870315A (en) | 2016-08-17 |
Family
ID=56628228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610208024.5A Pending CN105870315A (en) | 2016-04-05 | 2016-04-05 | Polarization-sensitive efficient superconducting nanowire single photon detector and design method therefor |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105870315A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107589091A (en) * | 2017-08-17 | 2018-01-16 | 南京理工大学 | A kind of near infrared band Meta Materials index sensor |
CN108872151A (en) * | 2017-09-29 | 2018-11-23 | 郑州大学 | It is a kind of based on T shape to and nano wire pair optical sensor |
CN110702220A (en) * | 2019-09-19 | 2020-01-17 | 天津大学 | Superconducting nanowire single photon detection system in mid-infrared band |
CN110967843A (en) * | 2019-12-13 | 2020-04-07 | 武汉大学 | Method for multiplexing anti-counterfeiting shading pattern and space-frequency multiplexing super-surface image |
US11441954B2 (en) | 2019-01-30 | 2022-09-13 | King Fahd University Of Petroleum And Minerals | Method, system and apparatus for measuring rest time of superconducting nanowire |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102829884A (en) * | 2012-09-10 | 2012-12-19 | 清华大学 | High-speed superconducting nanowire single-photon detector (SNSPD) with strong absorption structure and preparation method of high-speed SNSPD |
CN103579405A (en) * | 2012-09-10 | 2014-02-12 | 清华大学 | High-speed SNSPD with high-absorption structure and preparation method of high-speed SNSPD |
CN104183692A (en) * | 2014-08-15 | 2014-12-03 | 中国科学院上海技术物理研究所 | Superconductive nanowire single photon detector with responsivity enhanced based on metamaterials |
CN104752534A (en) * | 2015-04-27 | 2015-07-01 | 南京大学 | Superconductive nanowire single-photon detector and manufacturing method thereof |
-
2016
- 2016-04-05 CN CN201610208024.5A patent/CN105870315A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102829884A (en) * | 2012-09-10 | 2012-12-19 | 清华大学 | High-speed superconducting nanowire single-photon detector (SNSPD) with strong absorption structure and preparation method of high-speed SNSPD |
CN103579405A (en) * | 2012-09-10 | 2014-02-12 | 清华大学 | High-speed SNSPD with high-absorption structure and preparation method of high-speed SNSPD |
CN104183692A (en) * | 2014-08-15 | 2014-12-03 | 中国科学院上海技术物理研究所 | Superconductive nanowire single photon detector with responsivity enhanced based on metamaterials |
CN104752534A (en) * | 2015-04-27 | 2015-07-01 | 南京大学 | Superconductive nanowire single-photon detector and manufacturing method thereof |
Non-Patent Citations (2)
Title |
---|
LI GUANHAI,ET AL: "High efficiency and rapid response superconducting NbN nanowire single photon detector based on asymmetric split ring metamaterial", 《APPLIED PHYSICS LETTERS》 * |
YANG M., ET AL: "An Efficient and Polarization Sensitive SNSPD with Coupled Asymmetric SRR-Loaded Cavity", 《2015 IEEE INTERNATIONAL CONFERENCE ON APPLIED SUPERCONDUCTIVITY AND ELECTROMAGNETIC DEVICES》 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107589091A (en) * | 2017-08-17 | 2018-01-16 | 南京理工大学 | A kind of near infrared band Meta Materials index sensor |
CN108872151A (en) * | 2017-09-29 | 2018-11-23 | 郑州大学 | It is a kind of based on T shape to and nano wire pair optical sensor |
US11441954B2 (en) | 2019-01-30 | 2022-09-13 | King Fahd University Of Petroleum And Minerals | Method, system and apparatus for measuring rest time of superconducting nanowire |
CN110702220A (en) * | 2019-09-19 | 2020-01-17 | 天津大学 | Superconducting nanowire single photon detection system in mid-infrared band |
CN110702220B (en) * | 2019-09-19 | 2021-11-02 | 天津大学 | Superconducting nanowire single photon detection system in mid-infrared band |
CN110967843A (en) * | 2019-12-13 | 2020-04-07 | 武汉大学 | Method for multiplexing anti-counterfeiting shading pattern and space-frequency multiplexing super-surface image |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105870315A (en) | Polarization-sensitive efficient superconducting nanowire single photon detector and design method therefor | |
Liu et al. | Ultra-broadband perfect solar absorber by an ultra-thin refractory titanium nitride meta-surface | |
Yi et al. | Broadband polarization-insensitive and wide-angle solar energy absorber based on tungsten ring-disc array | |
Zhang et al. | Quad-band plasmonic perfect absorber using all-metal nanostructure metasurface for refractive index sensing | |
Xiong et al. | Silver nanowires for photonics applications | |
Barreda et al. | Applications of hybrid metal‐dielectric nanostructures: state of the art | |
Yu et al. | Transmissive/reflective structural color filters: theory and applications | |
CN103808691A (en) | Asymmetric Au particle array and FPcavity coupled refractive index sensor | |
CN104656170A (en) | Apparatus for fully absorbing wide waveband light and preparation method for apparatus | |
Jing et al. | Hybrid organic-inorganic perovskite metamaterial for light trapping and photon-to-electron conversion | |
US20150364898A1 (en) | Laser with sub-wavelength hole array in metal film | |
Chou Chao et al. | Enhancing plasmonic effect in periodic nanometal square prisms with fences and cavities for refractive index and temperature sensing applications | |
CN107507883B (en) | Whisker single-photon detectors | |
CN104167452A (en) | Superconducting single-photon detector with phase grating and manufacturing method for superconducting single-photon detector with phase grating | |
Wang et al. | Plasmonic hot-electron photodetection with quasi-bound states in the continuum and guided resonances | |
CN103389537A (en) | Wideband reflective type sub-wavelength rectangular ring array quarter wave plate and manufacturing method thereof | |
Majety et al. | Triangular quantum photonic devices with integrated detectors in silicon carbide | |
Chen et al. | Semiconductor nanowire array for transparent photovoltaic applications | |
CN112050935B (en) | Superconducting nanowire single photon detector and preparation method thereof | |
CN107390305A (en) | The full light absorber structure of double frequency-band | |
Wang et al. | Plasmonic light trapping in an ultrathin photovoltaic layer with film-coupled metamaterial structures | |
CN108375812B (en) | Three-frequency absorber based on optical Tamm state | |
Zhao et al. | Design of a quantum-spin sensor with sub-micron resolution and enhanced optical read-out ability by the nitrogen-vacancy centers in diamond | |
CN113484943B (en) | Full-medium super-surface sensor for exciting ring dipole Fano resonance | |
CN213069242U (en) | Light absorber |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160817 |
|
WD01 | Invention patent application deemed withdrawn after publication |