CN103389537A - Wideband reflective type sub-wavelength rectangular ring array quarter wave plate and manufacturing method thereof - Google Patents
Wideband reflective type sub-wavelength rectangular ring array quarter wave plate and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses a wideband reflective type sub-wavelength rectangular ring array quarter wave plate and a manufacturing method thereof. The wave plate comprises a glass substrate, a first metal layer, a glass layer and a second metal layer which are sequentially arranged from bottom up, wherein the second metal layer comprises a plurality of periodical two-dimensional annular aperture arrays; the length L1 and the length L2 of every two adjacent apertures in the two-dimensional annular apertures are equal, and the width W1 and the width W2 of very two adjacent apertures in the two-dimensional annular apertures are unequal; when incident linearly polarized light incomes from the upper part of the second metal layer in a polarized azimuth angle theta, the phase difference of a phase phi x and a phase phi y of a reflectance field on the second metal layer in two orthogonal direction components is II/2, II or 3II/2; and when theta is equal to 45 degrees, an amplitude component Ex and an amplitude component Ey are equal. With the adoption of an optimal design, the functions of the quarter wave plate are achieved in the position of 1.55 mu m of wave length, and changes of the phase difference of two orthogonal components are lower than 2% of II/2 within a range of 130 nm of ultra wide wavelength, and the reflectivity of the whole waveband range reaches 90%.
Description
Technical field
The present invention relates to the optical element technology field, particularly relate to a kind of broadband reflection type sub-wavelength straight-flanked ring array quarter-wave plate and preparation method thereof.
Background technology
In research and the application of light, it is vital controlling the polarisation of light state.At present, widely used control polarisation of light state device is all to utilize the birefringece crystal material to realize mostly, when light incides birefringece crystal, because the optical axis of two orthogonal directionss has different refractive indexes, therefore transmitted light can produce phase differential on these two orthogonal directionss, thereby controls arbitrarily the polarisation of light state.Control the interaction of light and material due to surface plasma resonance can be produced on the surface of metal and medium, current second wavelength metallic structure more and more causes people's extensive concern, this surface plasma resonance can be divided into two kinds, and wherein a kind of surface plasmons (SPP) resonance is only relevant with the periodicity of metal construction; Another kind is that local surface plasma (LSP) resonance is only relevant with the aperture parameters of metal sub-wavelength structure and with the variation in cycle, do not change, and this local surface plasma resonance proof can cause the sudden change of the phase place of light field.The SPA sudden phase anomalies effect of the light field that causes based on this local surface plasma resonance, can realize by the metal sub-wavelength microstructure film function of wave plate.
The plasma wave plate of transmission-type is realized by different metal micro structures.The people such as Khoo and Zhao has proposed a kind of method, namely the metal film that contains a pair of mutual vertical slits is placed on substrate of glass, then change respectively length and the width of two slits, finally in the certain wave strong point, realize the phase differential of transmitted field pi/2 on the pairwise orthogonal durection component, and then realized the function of quarter wave plate.The people such as Roberts have proposed a kind of similar structure, by utilizing sub-wavelength cruciform aperture to produce the local surface plasma resonance, realize quarter wave plate, namely by the slit length of regulating two vertical direction, realize the tunable of phase differential.The people such as Baid have proposed a kind of super super material metal film of anisotropy that sees through phenomenon that has, the perfect conductor metal film that namely contains the mutually orthogonal rectangular slot pair array of sub-wavelength, in order to form and utilize Fabry-Perot (F-P) resonance, the thickness of metallic film must be the integral multiple of designed target half-wavelength, and this will increase difficulty to the manufacture craft of device; The people such as Li have realized plasma half-wave plate function by three layers of L shaped microstructure by experiment, phase differential on two vertical direction can utilize the coupling effect of plasma resonance and F-P resonance to regulate, but due to the absorption of metal, the energy conversion efficiency of device is lower.
Except above transmission mode, the people such as Hao utilize the anisotropy metal material that is embedded with periodic H shape structure composition to realize electromagnetic polarization converted, in microwave region, by the adjustment structure parameter, various polarization state (the circular polarization of electromagnetic field, elliptic polarization, linear polarization) can realize.The people such as Pors propose to utilize the mutually orthogonal nano-antenna array with identical cross-section, by controlling the length variations of golden antenna, electric field component produces the phase differential of pi/2 on 1520nm wavelength place pairwise orthogonal direction, in designed structure, for the amplitude of realizing two durection components equates, the linearly polarized light of incident should be set as 56 ° with respect to the polarization azimuth of x axle, rather than needed 45 ° of traditional wave plate; 2012, the people such as Wang have proved that the oval pie array of metal nano can realize by reflection the conversion of polarization state, by breaking azimuthal symmetry, the polarization direction of incident ray polarized light is during respectively along oval major axis and short-axis direction, oval plasma arrays can be supported different parity modes resonant cavities, produce phase differential on two directions, thereby by rational design, can convert linearly polarized light to circularly polarized light.
Also disclose a kind of transmission-type plasma quarter wave plate in prior art, by be embedded with periodically straight-flanked ring array of apertures on the single silver metallic film, realize, transmissivity 46%, but conversion efficiency is still very low, greater than 50% homenergic, has all lost.
Therefore,, for above-mentioned technical matters, be necessary to provide a kind of broadband reflection type sub-wavelength straight-flanked ring array quarter-wave plate and preparation method thereof.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of broadband reflection type sub-wavelength straight-flanked ring array quarter-wave plate and preparation method thereof.
To achieve these goals, the technical scheme that provides of the embodiment of the present invention is as follows:
A kind of broadband reflection type sub-wavelength straight-flanked ring array quarter-wave plate, described wave plate comprises glass substrate, the first metal layer, glassy layer and the second metal level that sets gradually from the bottom to top, described the second metal level consists of some periodic two-dimensional annular array of apertures, adjacent two aperture length L in the two-dimensional annular aperture
1, L
2Equal, width W
1, W
2Not etc., with polarization azimuth θ during from the second metal level top incident, the mirror field on the second metal level is along the position phase Ф of pairwise orthogonal durection component when the linearly polarized light of incident
x, Ф
yMeeting phase differential is pi/2, π or 3 pi/2s; And when θ=45 °, amplitude component E
x, E
yEquate.
As a further improvement on the present invention, described the first metal layer and the second metal level are the gold layer.
As a further improvement on the present invention, the wavelength band of the linearly polarized light of described incident is 1.50 μ m～1.63 μ m.
As a further improvement on the present invention, the thickness of described glassy layer is 200nm.
As a further improvement on the present invention, the thickness of described the first metal layer is more than or equal to 100nm.
Correspondingly, a kind of method for making of broadband reflection type sub-wavelength straight-flanked ring array quarter-wave plate, described method comprises:
S1, optimal design two-dimensional annular aperture, make two adjacent aperture length L
1, L
2Equate width W
1, W
2Not etc., simultaneously when the linearly polarized light of incident with polarization azimuth θ during from the second metal level top incident, the mirror field on the second metal level is along the position phase Ф of pairwise orthogonal durection component
x, Ф
yMeeting phase differential is pi/2, π or 3 pi/2s; And when θ=45 °, amplitude component E
x, E
yEquate;
S2, provide glass substrate;
S3, the first metal layer of growing on described glass substrate;
S4, on described the first metal layer, glassy layer is set;
S5, second metal level of growing on described glassy layer;
S6, form some periodic two-dimensional annular array of apertures on described the second metal level.
As a further improvement on the present invention, in described method, " optimal design two-dimensional annular aperture " specifically comprises:
Determine two aperture length L adjacent in the two-dimensional annular aperture
1, L
2, L wherein
1=L
2
Determine an aperture width W
1Or W
2, optimize another aperture width W
2Or W
1, making when the linearly polarized light of incident with polarization azimuth θ during from the second metal level top incident, the mirror field on the second metal level is along the position phase Ф of pairwise orthogonal durection component
x, Ф
yMeeting phase differential is pi/2, π or 3 pi/2s; And when θ=45 °, amplitude component E
x, E
yEquate.
As a further improvement on the present invention, described Optimization Design adopts the Finite Difference-Time Domain separating method to carry out numerical simulation mirror field amplitude component and position phase component.
As a further improvement on the present invention, in described step S6, the two-dimensional annular array of apertures forms by beamwriter lithography or focused-ion-beam lithography method.
The present invention has the annulus on two orthogonal directionss of asymmetrical width by control, amplitude and the phase component of mirror field on these two orthogonal directionss can obtain fine control, and can utilize middle layer glassy layer dielectric thickness further to control.By optimal design, realized the function of quarter wave plate at 1.55um wavelength place, and in the super wide wavelength coverage of 130nm, the phase differential of pairwise orthogonal component changes lower than 2% of pi/2, whole wavestrip scope internal reflection rate all reaches 90%.
Description of drawings
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, below will the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described, apparently, the accompanying drawing that the following describes is only some embodiment that put down in writing in the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 a-1c is perspective view, plan structure schematic diagram and the local enlarged diagram of broadband reflection type sub-wavelength straight-flanked ring array quarter-wave plate of the present invention;
Fig. 2 is P=500nm in an embodiment of the present invention, 550nm, the normalization reflectance curve figure during 600nm;
Fig. 3 a, 3b are reflectivity and the phase curve when in an embodiment of the present invention, polarization angle is 0 °; Fig. 3 c, 3d are reflectivity and the phase curve when in an embodiment of the present invention, polarization angle is 90 °;
Fig. 4 a, 4b be in an embodiment of the present invention the reflectivity during incident polarization azimuth angle theta=45 ° and phase differential with the change curve of wavelength;
Fig. 5 is the long H of an embodiment of the present invention lumen
2Corresponding phase differential curve while being respectively 20,40,60nm;
Fig. 6 a, 6c, 6e are H in an embodiment of the present invention
2Be respectively 20nm, 40nm, mirror field reflectivity and along x during 60nm, y two direction amplitude components are with the curve of wavelength variations; Fig. 6 b, 6d, 6f are H in an embodiment of the present invention
2Be respectively 20nm, 40nm, during 60nm, along x, y two direction phase differential are with the curve of wavelength variations;
Fig. 7 a is mirror field reflectivity and along x in an embodiment of the present invention, and y two direction amplitude components are with the curve of wavelength variations, Fig. 7 b be in an embodiment of the present invention amplitude ratio and phase differential with the curve of wavelength variations.
Embodiment
In order to make those skilled in the art person understand better technical scheme in the present invention, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Based on the embodiment in the present invention, those of ordinary skills, not making under the creative work prerequisite the every other embodiment that obtains, should belong to the scope of protection of the invention.
Shown in ginseng Fig. 1 a, 1b, a kind of broadband reflection type sub-wavelength straight-flanked ring array quarter-wave plate of the present invention comprises that the glass substrate 10, the first metal layer 20, glassy layer 30 and the second metal level 40, the second metal levels that set gradually from the bottom to top consist of some periodic two-dimensional annular array of apertures.In present embodiment, the first metal layer 20 and the second metal level 40 are the gold layer.
The gold that will contain periodic two-dimensional annular array of apertures is placed on glassy layer, places overleaf the continuous gold layer of one deck again, is positioned in the substrate of the thick glass of semiinfinite.Shown in Fig. 1 c, the cycle of structure represents with P, and the thickness of the second metal level 40, glassy layer 30, the first metal layer 20 is used respectively H
1, H
2, H
3Represent, be respectively L with slit length and the width of x direction in the y-direction
1, W
1, L
2, W
2, H is set
3More than or equal to 100nm, like this from directly over the light of vertical incidence can not see through, therefore only pay close attention to the reflectivity properties of structure.Aperture length L
1, L
2Equal, width W
1, W
2Not etc., with polarization azimuth θ during from the second metal level top incident, the mirror field on the second metal level is along the position phase Ф of pairwise orthogonal durection component when the linearly polarized light of incident
x, Ф
yMeeting phase differential is pi/2, π or 3 pi/2s; And when θ=45 °, amplitude component E
x, E
yEquate.
The method of employing Fdtd Method (FDTD) is carried out the character of numerical simulation mirror field.On x, y border, utilize periodic boundary to carry out the simulation cycle structure, be set to the perfect matching border at the z interface, with polarization azimuth during from top incident, by calculating, can obtain the structure mirror field with respect to the normalization reflectivity of incident light source energy and along the phase place of x, y two components when the linearly polarized light of incident.
In the present invention, the method for making of broadband reflection type sub-wavelength straight-flanked ring array quarter-wave plate comprises the following steps:
S1, optimal design two-dimensional annular aperture, make two adjacent aperture length L
1, L
2Equate width W
1, W
2Not etc., simultaneously when the linearly polarized light of incident with polarization azimuth θ during from the second metal level top incident, the mirror field on the second metal level is along the position phase Ф of pairwise orthogonal durection component
x, Ф
yMeeting phase differential is pi/2, π or 3 pi/2s; And when θ=45 °, amplitude component E
x, E
yEquate;
S2, provide glass substrate;
S3, the first metal layer of growing on described glass substrate;
S4, on described the first metal layer, glassy layer is set;
S5, second metal level of growing on described glassy layer;
S6, form some periodic two-dimensional annular array of apertures on described the second metal level.
Wherein, step S6 forms by beamwriter lithography or focused-ion-beam lithography method, specifically comprises:
Beamwriter lithography, electron beam lithography are to utilize electron beam scanning photoresist to be processed into the technology of fine mask figure.Because the photoresist that is positioned on metallic film is more responsive to electron beam, after being subjected to electron beam irradiation, physics and chemistry character can change, show good molten or non-molten characteristic in developer, thereby form needed pattern, and then utilize the reactive ion beam etching (RIBE) system with the design transfer on photoresist to the Au film, form periodic annular array.The minimum resolution of beamwriter lithography reaches 5nm-10nm, for needed W in the present invention
1, W
2(generally at 30-160nm) all can realize by this kind method;
Focused-ion-beam lithography, focused-ion-beam lithography reaches the technology of etching purpose take ion beam as the etching means, the ion beam minimum diameter is 10nm approximately, minimum resolution can reach 12nm, can realize injecting without mask under computer control, even the Nonvisualization etching, can directly make various nanostructureds, for needed W in patent on silverskin
1, W
2(30-160nm) can realize with this kind method fully.
Further, the optimal design in two-dimensional annular aperture specifically comprises:
Determine two aperture length L adjacent in the two-dimensional annular aperture
1, L
2, L wherein
1=L
2
Determine an aperture width W
1Or W
2, optimize another aperture width W
2Or W
1, making when the linearly polarized light of incident with polarization azimuth θ during from the second metal level top incident, the mirror field on the second metal level is along the position phase Ф of pairwise orthogonal durection component
x, Ф
yMeeting phase differential is pi/2, π or 3 pi/2s; And when θ=45 °, amplitude component E
x, E
yEquate.
Below in conjunction with theoretical foundation, broadband reflection type sub-wavelength straight-flanked ring array quarter-wave plate of the present invention and making thereof are further described.
Fig. 2 can find out, mirror field under Different structural parameters (reflectivity and phase place) is with the change curve of incident wavelength, and at first exploratory reflex rate character, work as P=500nm, 550nm, 600nm, H
1=50nm, H
2=40nm, H
3=100nm.In order to probe into the character that obtains mirror field, annular aperture is set to equate (L along the parameter of x, y direction
1=L
2=450nm, W
1=W
2=80nm).The incident wave band is 0.5-2.2 μ m, θ=45 °.Fig. 2 has provided under the different cycles reflectivity with the change curve of wavelength, can find out that each reflectance curve has a series of trough along with the increase in cycle is drifted about to the larger direction of wavelength on scheming, they are owing to exciting SPP resonance to cause, yet last trough wavelength location remains unchanged, this is the representative property of LSP just, in order further to confirm the character of this trough to have provided when P is fixed on 550nm W
1=W
2Reflectance curve while from 40nm, changing to 100nm.
Corresponding to last trough in Fig. 2, increase along with aperture width, resonant wavelength is moved to the left, and this character is the LSP resonance that causes due to non-propagation (cut-off) pattern that aperture is supported, and LSP is only relevant with the size shape in aperture and with the cycle size variation, have nothing to do., because LSP resonance is only more responsive to the narrow annular channel structure, therefore can utilize this phenomenon to control relatively easily the mirror field characteristic.Work as W
1=W
2While by 40nm, changing to 100nm, θ=45 °, L
1=L
2=450nm, H
1=50nm, H
2=40nm, H
3=100nm, change by π to-π in the near-resonance phase place, thereby therefore can resonate the variation of control phase well by changing annular aperture control LSP.
From this aspect of physics function, the annular aperture on the second metal level plays vital effect in the LSP resonance effects, probes into the impact of the size effect of golden the second metal level annular aperture on the mirror field phase place of LSP resonance and correspondence.
Fig. 3 has provided the impact of annular aperture effect on mirror field under different polarization azimuths, for simplicity, and annular aperture width W in the y-direction
1Be fixed on 80nm constant, only change width W in the x-direction
1Be respectively 40nm, 60nm, 80nm, 100nm, establish L
1=L
2=450nm, cycle P=550nm, silver film thickness (H
1, H
2, H
3) be respectively 50nm, 40nm and100nm.When polarization angle θ was 0 °, the normalization reflectivity of mirror field and phase place remained unchanged substantially with the curve of wavelength variations, as Fig. 3 a, 3b.When polarization angle θ was 90 °, the normalization reflectivity of mirror field and phase place change curve were along with W
2Variation and change, as shown in Fig. 3 c, 3d, and along with W
2The LSP resonance peak that reduces move right, in same Fig. 3 d, the variation of phase place is along with W
2Variation also very sensitive, especially in resonance, there will be a SPA sudden phase anomalies near trough.This is explanation just, if the polarization angle of incident is 45 °, it will excite two independently resonance, corresponds respectively to along two electric field components of mutually orthogonal x and y direction.Fig. 3 has disclosed by fixing slit width W along a direction
1, only change the width W along another direction
2Thereby, be easy to control reflectivity and mirror field along the phase place of pairwise orthogonal durection component, avoided so the complicated effect that intercouples.
The rule that changes for different polarization direction in Fig. 3 and different pore size parameter can be further from light the Electric Field Distribution during by structure understand.W is set
1=80nm, W
2=100nm, P=550nm, L
1=L
2=450nm, H
1=50nm, H
2=40nm, H
3=100nm.When polarization azimuth while being 0 ° and 90 ° corresponding to the x-y plane in the Electric Field Distribution (cross section is corresponding to the centre of upper strata gold) of resonant wavelength 1.46 μ m and 1.31 μ m.When θ=0 °, there will be very strong resonance in aperture in the y-direction, show as electric field intensity and strengthen with respect to other positions, be almost 0 on slit in the x-direction, this can key drawing 3a, 3b in mirror field not with W
2The phenomenon that changes.Find out when θ=90 °, there will be very strong resonance in aperture in the x-direction, show as electric field intensity and strengthen with respect to other positions, be almost 0 on slit in the y-direction, this can key drawing 3c, 3d in mirror field with W
2The phenomenon that changes and change.When resonant wavelength 1.46 μ m and 1.31 μ m, after light enters structure, have very major part will be gathered in middle layer, then be converted into heat, this with regard to well explain the appearance reason of when resonance reflectivity spectral line trough.
, with respect to different incident polarization directions, can find out if incident light polarization azimuth angle theta=45 ° will excite along x the independently resonance separately of y two directions about the character of the mirror field of top discussion.Fig. 4 provided mirror field after synthetic the reflectivity spectral line and along x, the phase differential curve of y two vertical direction, P=550nm, H
1=50nm, H
2=40nm, H
3=100nm, L
1=L
2=450nm, W
1Be fixed as 80nm, W
2Be changed to respectively 40,60,80,100nm, can find out in Fig. 4 a and two LSP resonance troughs occur, correspond respectively to x, y two components excite, and one of them stuck-at-１ .46 μ m is corresponding to W
1=80nm, the another one trough is along with W
2Increase and blue shift.If the definition reflected field is along x(0 °), y(90 °) amplitude and the phase place of pairwise orthogonal durection component be respectively E
x, E
yAnd Ф
x, Ф
y, the phase differential between two components is defined as Ф=Ф
y-Ф
x,, phase differential Ф will determine catoptrical polarization state.Fig. 4 b has provided and has worked as W
2The change curve of phase differential Ф during variation, can find out and work as W
1=W
2=80nm, namely annular aperture is along x, when y direction width is identical, phase differential is 0; After breaking this symmetry, it will be appreciated that the significant change of phase differential with wavelength, namely at W
2For 40nm, 60nm, in the situation of 100nm, as shown in Figure 4 b.Can find out equally annular aperture stand out Δ W=W
1-W
2Larger, maximal phase potential difference Ф will be larger, so just formed near the physical basis that the random wave strong point realizes the plasma wave plate LSP resonance peak, namely utilizes the figuratum ultra-thin golden film of upper strata embedding, electrolyte and metal level, fixedly W
1Constant while and optimize W
2, the phase differential that makes the pairwise orthogonal component of mirror field is pi/2, π or 3 pi/2s.
For control on reflection electromagnetic wave two ll vertical electric field component amplitude and phase place aspect, the dielectric thickness (H in metal-dielectric-metal structure
2) also play most important.Fig. 5 has provided the phase differential spectral line when middle layer thickness is respectively 20,40,60nm, and other parameters are set to P=550nm, H
1=50nm, H
2=40nm, H
3=100nm, L
1=L
2=450nm, W
1=100nm, W
2=70nm.As the long H in chamber
2During for 20nm, the maximal phase potential difference is 5 radians, corresponding to wavelength 1.6 μ m.When change of cavity length was 40,60nm, the maximal phase potential difference diminished, and the maximal phase potential difference is moved to the left corresponding to the position of wavelength.
By in conjunction with above-mentioned stand out (Δ W) and intermediate layer thickness (H
2), the target phase difference of designed wave plate can obtain by optimizing.Such as, can compensate the maximal phase potential difference of bringing due to change of cavity length and change by changing stand out (Δ W), if change the width in straight-flanked ring aperture, wavelength location corresponding to maximal phase potential difference is also through regulating.
Fig. 6 has provided when the polarization azimuth of incident light is 45 °, and corresponding different cavity length (20,40, the quarter wave plate of optimizing at wavelength 1.55 μ m places in the time of 60nm).P=550nm, H
1=50nm, H
3=100nm, L
1=L
2=450nm, find during less than 100nm,, because resonance effects descends more by force the phase jump rate of change very fast, to cause the maximal phase potential difference usually greater than pi/2 when chamber length in numerical simulation.Can find out from Fig. 6 a, 6b when chamber is long and be 20nm, W
1=100nm and W
2During=79nm, the quarter wave plate of optimization 1.55 mum wavelength place mirror fields along x, y two vertical direction amplitude components equate and the maximal phase potential difference is 3 pi/2s, reflectivity is 65%.Change and be no more than 2% of pi/2 to phase differential in the 1575nm wavelength band at 1535nm.Be 40nm, W when chamber is long
1=93nm, W
2During=46nm, the quarter wave plate of optimization is increased to 80% at the reflectivity at 1.55 μ m places, corresponding to the fluctuation wavelength coverage of phase differential 2%, is increased to 70nm, when chamber is long while further being increased to 60nm, and W
1=98nm, W
2=39nm, be increased to 85% corresponding to the reflectivity at 1.55 μ m places, and the fluctuation wavelength coverage of phase differential 2% is increased to 90nm.Can clearly find out from Fig. 6, Δ W changes from 21nm, and 47nm is respectively 20,40,60nm to 59nm corresponding cavity length, namely indicates and can come the long elongated maximal phase potential difference of bringing of compensated cavity to reduce by changing stand out Δ W.
As shown in Figure 6, reflectivity and 2% operating wavelength range can be optimized by the adjustment structure parameter.Set P=550nm, H
1=50nm, H
2=40nm, H
3=100nm, L
1=L
2=450nm, W
1=W
2=30nm, 80nm, 100nm and 160nm, when chamber length during less than 80nm, LSP resonance trough is moved to the left and the strength of resonance weakens (reflectivity of resonant wavelength increases) with long increase the in chamber, and this is because chamber is long when very little, plasma on two interfaces of metal and glass produces coupling, along with H
2The increase coupling effect weaken.Work as H
2Further increase (〉 80nm) time, LSP will be coupled with the F-P chamber, causes resonant wavelength to increase and move right along with chamber is long.The total effect of change of cavity length article on plasma quarter wave plate is: when chamber length is 200nm, resonance effects is the most weak, and the variation with upper strata straight-flanked ring pore size does not change, resonate when the most weak, can make the operation wavelength reflectivity maximum, and phasic difference changes the slowest, and this is the needed good performance of wave plate just.
Fig. 7 has provided the performance parameter H of the plasma quarter wave plate of optimizing when 1.55 mum wavelengths are sentenced 45 ° of polarization angle incident
2=200nm, P=550nm, L
1=L
2=450nm, H
1=50nm, H
3=100nm, W
1=160nm, W
2=35nm.Fig. 7 a has provided reflectivity and along x, the amplitude component of y two directions is with the curve of wavelength variations, and the intersection point of two amplitude components represents at 1.55 E of mum wavelength place
x=E
y, Fig. 7 b has provided the amplitude ratio E of two directions
x/ E
yAnd phase differential, be 3 pi/2s at 1.55 mum wavelength places, when polarized light was with 45 ° of polarization angle incident in the ban, designed plasma quarter wave plate can make reflected light be converted to circularly polarized light at 1.55 mum wavelength places.Change less than 2% of pi/2 to 1.63 mu m waveband phase differential at 1.5 μ m, amplitude ratio changes to 1.015 from 0.985, and at 1.5 μ m to 1.63 μ m wavestrip reflectivity greater than 90%.
If the ellipticity of the elliptically polarized light of reflection represents with η, η is relevant with major axis b with oval minor axis a, be η=tan (ξ)=a/b, certainly η also can represent by the amplitude ratio in Fig. 7 and phase differential, be sin (2 ξ)=sin (2 χ) sin (Φ), wherein χ is by tan (χ)=E
y/ E
xDraw, corresponding to amplitude ratio and phase data on the pairwise orthogonal direction, ellipticity is greater than 96% in phase differential changes lower than 2% scope (1.5 μ m are to 1.63 μ m) of pi/2.Service band has covered the major part of optical communicating waveband.It should be noted, equally also can pass through W
1And W
2The method that numerical value exchanges, realize that phase differential is-3 pi/2s, and the sense of rotation of the circularly polarized light that obtains in the sense of rotation of the reflection circle polarized light that obtains and the present invention is opposite.
Long during for 200nm when chamber, resonance effects is the most weak, and the SPA sudden phase anomalies of corresponding LSP resonance changes slower, so phase differential is the quarter wave plate of pi/2, and 1/2 wave plate of π also can obtain.Work as P=550nm, θ=45 °, L
1=L
2=450nm, H
1=50nm, H
2=200nm, H
3=100nm, W
1=120nm, W
2During=64nm, during linearly polarized light normal incidence, the mirror field correspondence is along x, the phase differential of y two electric field components is π at 1.55 μ m places, and amplitude is equal, so reflected light is linearly polarized light, but polarization direction is vertical with the incident ray polarized light polarization direction, at 1.55 μ m place reflectivity, is 82%.Work as P=550nm, θ=45 °, L
1=L
2=450nm, H
1=50nm, H
2=200nm, H
3=100nmW
1=100nm, W
2During=78nm, during linearly polarized light incident, the mirror field correspondence is along x, the phase differential of y two electric field components is pi/2 at 1.55 μ m places, and amplitude is equal, so reflected light is circularly polarized light, but the opposite direction of structure in sense of rotation and Fig. 7 is 74% at 1.55 μ m place reflectivity; With respect to the service band scope of 130nm in Fig. 7, this quarter wave plate operating wavelength range is 45nm only.
In a word,, by the numerical simulation of Finite Difference-Time Domain separating method, utilize metal-dielectric-metal three-decker, the golden film that is embedded with sub-wavelength rectangular loop array of apertures on the superiors' metal is realized a kind of method of quarter wave plate.Result shows, has the annulus on two orthogonal directionss of asymmetrical width by control, and amplitude and the phase component of mirror field on these two orthogonal directionss can obtain fine control, and can utilize interlayer dielectric thickness further to control.By optimal design, realized the function of quarter wave plate at 1.55um wavelength place, and at 130nm(1.5 μ m to 1.63 μ m) super wide wavelength coverage in, the phase differential of pairwise orthogonal component changes lower than 2% of pi/2.In advanced person's nano-photon device and integrated photon system, has huge using value.
As can be seen from the above technical solutions, the present invention has the annulus on two orthogonal directionss of asymmetrical width by control, amplitude and the phase component of mirror field on these two orthogonal directionss can obtain fine control, and can utilize middle layer glassy layer dielectric thickness further to control.By optimal design, realized the function of quarter wave plate at 1.55um wavelength place, and in the super wide wavelength coverage of 130nm, the phase differential of pairwise orthogonal component changes lower than 2% of pi/2, whole wavestrip scope internal reflection rate all reaches 90%.In advanced person's nano-photon device and integrated photon system, has huge using value.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned one exemplary embodiment, and in the situation that do not deviate from spirit of the present invention or essential characteristic, can realize the present invention with other concrete form.Therefore, no matter from which point, all should regard embodiment as exemplary, and be nonrestrictive, scope of the present invention is limited by claims rather than above-mentioned explanation, therefore is intended to include in the present invention dropping on the implication that is equal to important document of claim and all changes in scope.Any Reference numeral in claim should be considered as limit related claim.
In addition, be to be understood that, although this instructions is described according to embodiment, but not each embodiment only comprises an independently technical scheme, this narrating mode of instructions is only for clarity sake, those skilled in the art should make instructions as a whole, and the technical scheme in each embodiment also can, through appropriate combination, form other embodiments that it will be appreciated by those skilled in the art that.
Claims (9)
1. broadband reflection type sub-wavelength straight-flanked ring array quarter-wave plate, it is characterized in that, described wave plate comprises glass substrate, the first metal layer, glassy layer and the second metal level that sets gradually from the bottom to top, described the second metal level consists of some periodic two-dimensional annular array of apertures, adjacent two aperture length L in the two-dimensional annular aperture
1, L
2Equal, width W
1, W
2Not etc., with polarization azimuth θ during from the second metal level top incident, the mirror field on the second metal level is along the position phase Ф of pairwise orthogonal durection component when the linearly polarized light of incident
x, Ф
yMeeting phase differential is pi/2, π or 3 pi/2s; And when θ=45 °, amplitude component E
x, E
yEquate.
2. broadband reflection type sub-wavelength straight-flanked ring array quarter-wave plate according to claim 1, is characterized in that, described the first metal layer and the second metal level are the gold layer.
3. broadband reflection type sub-wavelength straight-flanked ring array quarter-wave plate according to claim 2, is characterized in that, the wavelength band of the linearly polarized light of described incident is 1.50 μ m～1.63 μ m.
4. broadband reflection type sub-wavelength straight-flanked ring array quarter-wave plate according to claim 1, is characterized in that, the thickness of described glassy layer is 200nm.
5. broadband reflection type sub-wavelength straight-flanked ring array quarter-wave plate according to claim 1, is characterized in that, the thickness of described the first metal layer is more than or equal to 100nm.
6. the method for making of a broadband reflection type sub-wavelength straight-flanked ring array quarter-wave plate as claimed in claim 1, is characterized in that, described method comprises:
S1, optimal design two-dimensional annular aperture, make two adjacent aperture length L
1, L
2Equate width W
1, W
2Not etc., simultaneously when the linearly polarized light of incident with polarization azimuth θ during from the second metal level top incident, the mirror field on the second metal level is along the position phase Ф of pairwise orthogonal durection component
x, Ф
yMeeting phase differential is pi/2, π or 3 pi/2s; And when θ=45 °, amplitude component E
x, E
yEquate;
S2, provide glass substrate;
S3, the first metal layer of growing on described glass substrate;
S4, on described the first metal layer, glassy layer is set;
S5, second metal level of growing on described glassy layer;
S6, form some periodic two-dimensional annular array of apertures on described the second metal level.
7. the method for making of broadband reflection type sub-wavelength straight-flanked ring array quarter-wave plate according to claim 6, is characterized in that, in described method, " optimal design two-dimensional annular aperture " specifically comprises:
Determine two aperture length L adjacent in the two-dimensional annular aperture
1, L
2, L wherein
1=L
2
Determine an aperture width W
1Or W
2, optimize another aperture width W
2Or W
1, making when the linearly polarized light of incident with polarization azimuth θ during from the second metal level top incident, the mirror field on the second metal level is along the position phase Ф of pairwise orthogonal durection component
x, Ф
yMeeting phase differential is pi/2, π or 3 pi/2s; And when θ=45 °, amplitude component E
x, E
yEquate.
8. the method for making of broadband reflection type sub-wavelength straight-flanked ring array quarter-wave plate according to claim 7, is characterized in that, described Optimization Design adopts the Finite Difference-Time Domain separating method to carry out numerical simulation mirror field amplitude component and position phase component.
9. the method for making of broadband reflection type sub-wavelength straight-flanked ring array quarter-wave plate according to claim 6, is characterized in that, in described step S6, the two-dimensional annular array of apertures forms by beamwriter lithography or focused-ion-beam lithography method.
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| CN108761617A (en) * | 2018-03-23 | 2018-11-06 | 中国科学院上海光学精密机械研究所 | Cavity-enhanced high reflection wave plate of medium and preparation method thereof |
| CN109901258A (en) * | 2019-04-04 | 2019-06-18 | 湖南大学 | A kind of micro-nano integrated device of Color Full holography and preparation method thereof |
| CN109921194A (en) * | 2019-01-22 | 2019-06-21 | 重庆邮电大学 | A kind of broadband Terahertz quarter-wave plate based on asymmetric crack |
| CN110221365A (en) * | 2019-05-13 | 2019-09-10 | 浙江大学 | A kind of reflection type polarization switching device of Terahertz frequency range |
| CN110456426A (en) * | 2019-07-31 | 2019-11-15 | 天津大学 | The difunctional Terahertz wave plate of the Meta Materials of sub-wavelength medium pillar array structure |
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