CN105870288B - 发光二极管及其制作方法 - Google Patents

发光二极管及其制作方法 Download PDF

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CN105870288B
CN105870288B CN201610267719.0A CN201610267719A CN105870288B CN 105870288 B CN105870288 B CN 105870288B CN 201610267719 A CN201610267719 A CN 201610267719A CN 105870288 B CN105870288 B CN 105870288B
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layer
conductive
physical coating
extension lamination
luminous extension
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CN105870288A (zh
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金超
谢创宇
谢振刚
王笃祥
吴超瑜
马志邦
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Tianjin Sanan Optoelectronics Co Ltd
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Priority to PCT/CN2016/111670 priority patent/WO2017185775A1/zh
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Abstract

本发明提供了一种发光二极管及其制作方法，其结构包括：发光外延叠层，包括第一类型半导体层、有源层和第二类型半导体层，具有相对的第一表面和第二表面，其中第一表面为出光面；导电层，形成于所述发光外延叠层的第二表面，包括物理镀膜层和化学镀膜层，其中所述物理镀膜层邻近所述发光外延叠层，具有裂缝，所述化学镀膜层填充所述物理镀膜层中的裂缝；基板，通过所述导电层与所述发光外延叠层连接。本发明利用真空蒸镀与化学镀膜结合的方法形成导电层，从而在真空蒸镀过程产生的缝隙中填充金属，增加电流导通面积，降低电压，改善ESD性能。

Description

发光二极管及其制作方法
技术领域
本发明涉及半导体光电器件领域，具体为一种发光二极管及其制作方法。
背景技术
导体发光二极管因其具有体积小、耗电低、寿命长和节能环保等优点得到了广泛应用。随着金属有机物物化学气相沉积（MOCVD）外延生长技术的成熟，以（AlxGa1-x）0.5In0.5P材料作为有源区的LED具有较高的内量子效率，对于LED来说研究的重点在通过器件结构设计来提高器件光提取效率。
请参看图1，一种采用转移基板的发光二极管100，从下至上依次包括：导电基板110、导电层120、由p型半导体层131和n型半导体层132构成的发光外延叠层130、欧姆接触层140及电极141、142。其中导电层120可包括金属反射层、键合合金等材料层，内部还可进一步设有孔洞结构121。
目前，LED蒸镀金属及合金主要使用真空蒸镀法，在高真空状况下将所要蒸镀的材料利用电阻或电子束加热达到熔化温度使原子蒸发附着在基板表面。但真空蒸镀为非等向性，仅能垂直向上进行沉积，因此在真空蒸镀导电层120时会在蒸镀材料边缘出现缝隙122，如图2所示，导致电流扩展面积变小，影响VF及ESD状况。
发明内容
本发明针对上述问题，本发明提供了一种发光二极管及其制作方法，其利用真空蒸镀与化学镀膜结合的方法形成导电层，从而在真空蒸镀过程产生的缝隙中填充金属，增加电流导通面积，降低电压，改善ESD性能。
本发明的技术方案为：一种发光二极管，包括：发光外延叠层，包括第一类型半导体层、有源层和第二类型半导体层，具有相对的第一表面和第二表面，其中第一表面为出光面；导电层，形成于所述发光外延叠层的第二表面，包括物理镀膜层和化学镀膜层，其中所述物理镀膜层邻近所述发光外延叠层，具有裂缝，所述化学镀膜层填充所述物理镀膜层中的裂缝；基板，通过所述导电层与所述发光外延叠层连接。
本发明还提供了一种发光二极管的制作方法，包括步骤：1）提供一发光外延叠层，包括第一类型半导体层、有源层和第二类型半导体层，具有相对的第一表面和第二表面，其中第一表面为出光面；2）在所述发光外延叠层的第二表面上形成导电层；3）提供一基板，将所述基板通过所述导电层与电发光外延叠层连接；其中，所述步骤2）中，所述导电层通过下面方法形成：先采用物理镀膜的方式，在所述发光外延叠层的第二表面蒸镀金属材料形成物理镀膜层，所述物理镀膜层中具有裂缝；再采用化学镀膜的方式，在所述物理镀膜层上化镀金属材料形成化学镀膜层，其填充所述物理镀膜层中的裂缝。
优选的，在所述导电层与所述发光外延叠层之间设有一透明绝缘层，其具有一系列导电通孔，所述物理镀膜层填充所述导电通孔。
优选的，所述物理镀膜层远离所述发光外延叠层的一侧表面具有高度差，从而在与所述基板连接后在导电孔通对应的位置形成一系列孔洞，作为电流阻挡层。
优选的，所述裂缝形成于所述物理镀膜层靠近所述导电通孔的边缘位置。
优选的，所述化学镀膜层的厚度0.3~5um。
优选的，在所述步骤2）前，在所述发光外延叠层的第二表面上先形成一透明绝缘层，其具有一系列导电通孔，所述物理镀膜层填充所述导电通孔。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
附图用来提供对本发明的进一步理解，并且构成说明书的一部分，与本发明的实施例一起用于解释本发明，并不构成对本发明的限制。此外，附图数据是描述概要，不是按比例绘制。
图1 是现在技术中的一种发光二极管的结构剖视图。
图2是图1所示发光二极管的局面SEM照片。
图3和4是根据本发明实施的一种发光二极管制作方法的流程图。
图5~9是根据本发明实施的发光二极管制作过程的结构剖视图。
图10为根据本发明实施的一种发光二极管的结构剖视图。
图11是图10所示发光二极管的局面SEM照片。
具体实施方式
下面结合附图和优选的具体实施例对本发明做进一步说明。
下面实施例公开了一种发光二极管芯片的制作方法，其采用物理镀膜与化学镀膜相结合的方法在发光外延叠层的下表面形成导电层，解决物理镀膜材料边缘裂缝问题，增加电流导通面积，降低工作电压，改善ESD状况。以下参考图3和4，说明本发明采用物理镀膜与化学镀膜相结合形成导电层的流程。
首先，在步骤S100中，提供一发光外延叠层结构，此发光二极管外延结构至少包含衬底210、第一类型半导体层221、第二类型半导体层222以及位于两者之间的有源层，如图5所示。衬底210的选取包括但不限于蓝宝石、氮化铝、氮化镓、硅、碳化硅、砷化镓等，其表面结构可为平面结构或图案化图结构。当第一类型半导体层221为p型半导体，第二类型半导体层222可为相异电性的n型半导体，反之，当第一类型半导体层221为n 型半导体，第二类型半导体层222可为相异电性的p型半导体。有源层可为中性、p型或n型电性的半导体。施以电流通过半导体发光叠层时，激发有源层122发光出光线。当有源层122以氮化物为基础的材料时，会发出蓝或绿光；当以磷化铝铟镓为基础的材料时，会发出红、橙、黄光的琥珀色系的光。在本实施例中，第一类型半导体层221为n型半导体、第二类型半导体层222为p型半导体，有源层采用磷化铝铟镓系多量子阱结构。进一步地，在第一类型半导体层221与有源层之间设置第一半导体缓冲层，在有源层和第二类型半导体层222之间设置第二半导体缓冲层。具体的，第一类型半导体层221为Si掺杂的AlGaInP材料层，Si浓度为7×1017~1×1018，第二类型半导体层222为掺Mg的GaP材料层，掺杂浓度为1.5×1018以上，第一和第二半导体缓冲层均为(Al0.7Ga0.3)InP材料层。在其他实施例中，有源层采用氮化物材料，可在第一类型半导体层221与有源层之间设置超晶格应力缓冲层，在有源层与第二类型半导体层222之间设置电子阻挡层等。
接着，在步骤S200中，在第二类型半导体层222的表面上制作图形化的透明介电层230，如图6所示。在该透明介电层230露出部分第二类型半导体层222的表面，作为导电通孔231。该透明介电层可选用SiO2或SiNx等材料。
接着，在步骤S300中，在透明介电层230上形成导电层240。请参看图4，该步骤具体分为两步：首先在步骤S310中，先采用物理镀膜的方式，在介电层230上蒸镀金属材料形成物理镀膜层241。由于物理镀膜为非等向性，仅能在垂直方面上进行沉积，因此在靠近介电层230的边缘区域会产生裂缝242，如图7所示；在步骤S320中，采用化学镀膜的方式，在物理镀膜层241上化镀金属材料形成化学镀膜层243，由于化学镀膜的角度为等向性，金属在各个方向沉积，因此可以有效地对裂缝242进行填充，如图8所示。在本实施例中，物理镀膜与化学镀膜相结合可以将物理镀膜产生的裂缝用化学镀膜方法填补，裂缝被金属填充后导电通孔的横截面积会增加，进而增大电流扩展面积，使电流较均匀分布在导电通孔上方，防止由于个别导电通孔出现裂缝导致电流扩展不均。在本实施例中，导电层一般可包括金属反射层、金属粘接层等。化学镀膜层243可以填充物理镀膜层241中的缝隙242，还可以同时覆盖物理镀膜层241的上表面，其厚度为0.3~5um。导电层240由于填充介电层230中的导电通孔231，因此其最终形成的上表面呈高低差结构，其中240a为高表面，240b为低表面。
接着，在步骤S400中，先提供一导电基板260，并在其上形成一金属粘接层250，接着将其与发光外延叠层结构上的导电层进行粘接，如图9所示。由于导电层240远离发光外延叠层的一侧表面具有高度差，从而在与导电基板260连接后在导电孔通对应的位置形成一系列孔洞290，其直接作为电流阻挡层之用。
最后，去除衬底210，并制作电极同，如图10所示。在本实施例中，电极包括主电极281和扩展电极282，其中扩展电极282的下方一般还可设有欧姆接触层270。
请参看图11，显示了采用上述方法制作而成的一种发光二极管的SEM照片，从图中可看出，导电层240在孔洞对应的边缘区域已看不到裂缝，这是因为物理镀膜与化学镀膜相结合可以将物理镀膜产生的裂缝用化学镀膜方法填补，从而避免物理镀膜在蒸镀材料边缘出现缝隙。
尽管已经描述本发明的示例性实施例，但是理解的是，本发明不应限于这些示例性实施例而是本领域的技术人员能够在如下文的权利要求所要求的本发明的精神和范围内进行各种变化和修改。

Claims (6)

1.发光二极管，包括：
发光外延叠层，包括第一类型半导体层、有源层和第二类型半导体层，具有相对的第一表面和第二表面，其中第一表面为出光面；
导电层，形成于所述发光外延叠层的第二表面，包括物理镀膜层和化学镀膜层，其中所述物理镀膜层邻近所述发光外延叠层，具有裂缝，所述化学镀膜层填充所述物理镀膜层中的裂缝；
基板，通过所述导电层与所述发光外延叠层连接；
其特征在于：在所述导电层与所述发光外延叠层之间设有一透明绝缘层，其具有一系列导电通孔，所述物理镀膜层填充所述导电通孔，且其远离所述发光外延叠层的一侧表面具有高度差，从而在与所述基板连接后在所述导电通孔对应的位置形成一系列孔洞，作为电流阻挡层。
2.发光二极管，包括：
发光外延叠层，包括第一类型半导体层、有源层和第二类型半导体层，具有相对的第一表面和第二表面，其中第一表面为出光面；
导电层，形成于所述发光外延叠层的第二表面，包括物理镀膜层和化学镀膜层，其中所述物理镀膜层邻近所述发光外延叠层，具有裂缝，所述化学镀膜层填充所述物理镀膜层中的裂缝；
基板，通过所述导电层与所述发光外延叠层连接；
其特征在于：在所述导电层与所述发光外延叠层之间设有一透明绝缘层，其具有一系列导电通孔，所述物理镀膜层填充所述导电通孔，所述裂缝形成于所述物理镀膜层靠近所述导电通孔的边缘位置。
3.根据权利要求1或2所述的发光二极管，其特征在于：所述化学镀膜层的厚度0.3~5um。
4.发光二极管的制作方法，包括步骤：
1）提供一发光外延叠层，包括第一类型半导体层、有源层和第二类型半导体层，具有相对的第一表面和第二表面，其中第一表面为出光面，在所述发光外延叠层的第二表面上先形成一透明绝缘层，其具有一系列导电通孔；
2）在所述发光外延叠层的第二表面上形成导电层；
3）提供一基板，将所述基板通过所述导电层与电发光外延叠层连接；
其中，所述步骤2）中，所述导电层通过下面方法形成：
先采用物理镀膜的方式，在所述发光外延叠层的第二表面蒸镀金属材料形成物理镀膜层，所述物理镀膜层中具有裂缝；
再采用化学镀膜的方式，在所述物理镀膜层上化镀金属材料形成化学镀膜层，其填充所述物理镀膜层中的裂缝；
其特征在于：
所述物理镀膜层填充所述导电通孔，其远离所述发光外延叠层的一侧表面具有高度差，从而在与所述基板连接后在所述导电通孔对应的位置形成一系列孔洞，作为电流阻挡层。
5.发光二极管的制作方法，包括步骤：
1）提供一发光外延叠层，包括第一类型半导体层、有源层和第二类型半导体层，具有相对的第一表面和第二表面，其中第一表面为出光面，在所述发光外延叠层的第二表面上先形成一透明绝缘层，其具有一系列导电通孔；
2）在所述发光外延叠层的第二表面上形成导电层；
3）提供一基板，将所述基板通过所述导电层与电发光外延叠层连接；
其中，所述步骤2）中，所述导电层通过下面方法形成：
先采用物理镀膜的方式，在所述发光外延叠层的第二表面蒸镀金属材料形成物理镀膜层，所述物理镀膜层中具有裂缝，所述裂缝形成于所述物理镀膜层靠近所述导电通孔的边缘位置；
再采用化学镀膜的方式，在所述物理镀膜层上化镀金属材料形成化学镀膜层，其填充所述物理镀膜层中的裂缝。
6.根据权利要求4或5所述的发光二极管的制作方法，其特征在于：所述化学镀膜层的厚度为0.3~5um。
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