CN105870214A - CIGS thin film solar cell - Google Patents

CIGS thin film solar cell Download PDF

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Publication number
CN105870214A
CN105870214A CN201610237968.5A CN201610237968A CN105870214A CN 105870214 A CN105870214 A CN 105870214A CN 201610237968 A CN201610237968 A CN 201610237968A CN 105870214 A CN105870214 A CN 105870214A
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layer
back electrode
cigs
solar cell
thickness
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董友强
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention relates to a CIGS thin film solar cell. The CIGS thin film solar cell sequentially comprises a substrate, a back electrode, a CIGS absorption layer, a buffer layer, an i-ZnO layer, a transparent window layer, an anti-reflection layer and a grid line electrode from bottom to top, wherein the substrate is arranged on one surface of the back electrode, the two surfaces of the back electrode are the same as a rough surface of a contact surface of the CIGS absorption layer and the back electrode, the root-mean-square roughness of the other surface of the CIGS absorption layer is less than 20 nanometers, the maximum thickness of the CIGS absorption layer is less than or equal to 1 micrometers, the buffer layer comprises a first Zn(O, S) buffer layer and a second ZnO buffer layer, the transparent window layer comprises a first graphene layer, a nanometer metal layer and a second graphene layer, and the anti-reflection layer comprises a first silicon dioxide layer, a nanometer titanium dioxide layer and a second silicon dioxide layer. The CIGS thin film with the thickness less than or equal to 1 micrometers is fabricated on the rough surface of the back electrode, the root-mean-square roughness of the other surface of the CIGS thin film is less than 20 nanometers, the effective optical path of light in the absorption layer is increased, the utilization of rare metal resources is substantially reduced on the basis of no damage to the utilization ratio of sunlight, the effective utilization of the sunlight is achieved, the production cost is also substantially reduced, and the CIGS thin film solar cell has very wide application prospect.

Description

A kind of CIGS thin-film solar cell
Technical field
The invention belongs to thin film solar cell manufacture technology field, particularly relate to a kind of copper and indium gallium Selenium film solar battery.
Background technology
The maximum problem of 21 century facing mankind is not only have energy problem, also environmental problem, Solar energy is utilized increasingly to be subject to people's attention to solve the global energy and environmental problem, Various solar cells arise at the historic moment.Cause with excessively using fossil fuels at energy worsening shortages In the crisis of global warming, solar energy power generating has become various countries and has paid the utmost attention to the cleaning of development The energy.CIGS (CIGS) compound solar cell is because conversion efficiency is high, the low light level is sent out Good electrical property, good stability, the advantage such as undamped and become one of most promising photovoltaic device. But, due to continuing to increase of electronic product demand, for the demand of various rare metals Also growing with each passing day, the price of rare metal goes up day by day.Under this overall background, improve rare gold The utilization rate belonged to has huge for protection rare metal resources and reduction battery production cost Big meaning.
In CIGS (CIGS) thin film solar cell, absorbed layer is the core of whole battery Point, transporting with collection work of photo-generated carrier of major part is by absorbed layer (p-type CIGS Layer) completed.In order to ensure that light is fully absorbed by battery, mostly CIGS is absorbed The thickness of layer makes 1.5 to 2.5 μm；Owing to CIGS belongs to valuable rare metal money Source, causes the cost of manufacture of CIGS thin-film solar cell to be difficult to decline.
Summary of the invention
The present invention solves that technical problem present in known technology provides a kind of and do not losing On the basis of the utilization rate of sunlight, the use of less CIGS material, battery is greatly reduced A kind of CIGS thin-film solar cell of cost of manufacture.
The present invention includes following technical scheme:
A kind of CIGS thin-film solar cell, includes the most successively: substrate, back electrode, CuInGaSe absorbed layer, cushion, i-ZnO layer, transparent window layer, antireflection layer and grid line Electrode, is characterized in: described substrate is positioned at the r.m.s. roughness of back electrode one side and is 80-120nm, described back electrode two sides r.m.s. roughness all be positioned at substrate one side the back of the body Face that electrode r.m.s. roughness CuInGaSe absorbed layer identical, described contacts with back electrode and the back of the body The r.m.s. roughness of electrode surface is identical, CuInGaSe absorbed layer another side r.m.s. roughness is Below 20nm, the thickness of CuInGaSe absorbed layer thick is≤1 μm, and cushion includes Oneth Zn (O, S) cushion and the second ZnO buffer, transparent window layer includes the first Graphene Layer, nano metal layer and the second graphene layer, antireflection layer include the first silicon dioxide layer, Nanometer titanium dioxide layer and the second silicon dioxide layer.
The present invention can also use following technical measures:
Described back electrode is double-deck Mo structure, and the thickness of back electrode thick is 600nm.
A described Zn (O, S) cushion is N-shaped Zn (O, the S) cushion that 25nm is thick, institute Stating the second ZnO buffer is N-shaped ZnO buffer thick for 50nm；The thickness of described i-ZnO layer Degree is 50nm；Described first graphene layer, nano metal layer and the thickness of the second graphene layer Degree is respectively 150nm, 50nm and 150nm；Described first silicon dioxide layer, nanometer two The thickness of titanium oxide layer and the second silicon dioxide layer 50nm, 100nm and 50nm respectively； Described gate line electrode is the Ni-Al of 2 μ m-thick.
The present invention has the advantage that and good effect:
The 1 μ m-thick CIGS that the present invention is formed by coevaporation on matsurface back electrode is thin Film, through corrosion, forms the copper and indium of the light trapping structure that surface Root Mean Square roughness is below 20nm Gallium selenium absorbed layer, add light in absorbed layer effective light path of process, do not losing the sun On the basis of the utilization rate of light, the most less utilization of rare metal resources, it is right both to have achieved Effective utilization of sunlight, is greatly reduced again the production cost of battery, the most widely should have Use prospect.
Accompanying drawing explanation
Fig. 1 is CIGS thin-film solar cell structural representation of the present invention.
In figure, 1-substrate, 2-back electrode, 3-CuInGaSe absorbed layer, 4-cushion, 5-i-ZnO Layer, 6-transparent window layer, 7-antireflection layer, 8-gate line electrode.
Detailed description of the invention
For the summary of the invention of the present invention, feature and effect can be disclosed further, especially exemplified by following reality Example also combines accompanying drawing and is described in detail as follows:
A kind of CIGS thin-film solar cell, includes the most successively: substrate, back electrode, CuInGaSe absorbed layer, cushion, i-ZnO layer, transparent window layer, antireflection layer and grid line Electrode, is characterized in: described substrate is positioned at the r.m.s. roughness of back electrode one side and is 80-120nm, described back electrode two sides r.m.s. roughness all be positioned at substrate one side the back of the body electricity The face that r.m.s. roughness CuInGaSe absorbed layer identical, described in pole contacts with back electrode and back of the body electricity The r.m.s. roughness of pole-face is identical, CuInGaSe absorbed layer another side r.m.s. roughness is Below 20nm, the thickness of CuInGaSe absorbed layer thick is≤1 μm, and cushion includes Oneth Zn (O, S) cushion and the second ZnO buffer, transparent window layer includes the first Graphene Layer, nano metal layer and the second graphene layer, antireflection layer include the first silicon dioxide layer, Nanometer titanium dioxide layer and the second silicon dioxide layer.
Described back electrode is double-deck Mo structure, and the thickness of back electrode thick is 600nm.
A described Zn (O, S) cushion is N-shaped Zn (O, the S) cushion that 25nm is thick, institute Stating the second ZnO buffer is N-shaped ZnO buffer thick for 50nm；The thickness of described i-ZnO layer Degree is 50nm；Described first graphene layer, nano metal layer and the thickness of the second graphene layer Degree is respectively 150nm, 50nm and 150nm；Described first silicon dioxide layer, nanometer two The thickness of titanium oxide layer and the second silicon dioxide layer 50nm, 100nm and 50nm respectively； Described gate line electrode is the Ni-Al of 2 μ m-thick.
A kind of manufacturing process of the present invention:
Step 1. makes the substrate that one side is matsurface
Using plasma etching machine, arranging power is 0.5kW, and pressure is 4 × 10-2pa, By Ar2, titanium foil one side is carried out the plasma etching that r.m.s. roughness is 100nm, As the substrate 1 that one side is matsurface；
Step 2. makes back electrode on the matsurface of substrate
Deposited on matsurface substrate and substrate matsurface by Deposited By Dc Magnetron Sputtering system The double-deck Mo structure that roughness is identical, thickness is 600nm as back electrode 2；
Step 3. makes light trapping structure CuInGaSe absorbed layer on the surface of back electrode
Put into vacuum chamber after being cleaned by the titanium foil being shaped with back electrode, use traditional coevaporation three step Method makes CuInGaSe absorbed layer on back electrode；Matsurface CIGS is formed thin on back electrode Film, using concentration is the NaOH solution of 1.5mol/L, and corrosion temperature is the corrosion alkali of 85 DEG C Liquid shows that to CIGS thin-film layer carries out corrosion treatmentCorrosion Science, until CIGS thin-film surface is equal Root mean square roughness is below 20nm's, forms the light trapping structure CIGS that thickness is 1 μm Absorbed layer 3；
Step 4. makes CIGS thin-film solar cell
On light trapping structure CuInGaSe absorbed layer the most successively make cushion 4, I-ZnO layer 5, transparent window layer 6, antireflection layer 7 and gate line electrode 8, wherein cushion bag N-shaped the 2nd ZnO including N-shaped the oneth Zn (O, S) cushion thick for 25nm and 50nm thickness delays Rushing layer, the thickness of described i-ZnO layer is 50nm, and transparent window layer includes that thickness is respectively First graphene layer of 150nm, 50nm and 150nm, nano metal layer and the second stone Ink alkene layer, antireflection layer includes thickness respectively 50nm, 100nm and 50nm first dioxy SiClx layer, nanometer titanium dioxide layer and the second silicon dioxide layer, described gate line electrode is 2 μ The Ni-Al that m is thick, completes a kind of CIGS thin-film solar cell of the present invention as shown in Figure 1 Manufacturing process.
The another kind of manufacturing process of the present invention:
Step 1. makes the substrate that one side is matsurface
Using plasma etching machine, arranging power is 1kW, and pressure is 5 × 10-2pa, logical Cross Ar2 and stainless steel foil one side carried out the plasma etching that r.m.s. roughness is 100nm, As the substrate 1 that one side is matsurface；
Step 2. makes back electrode on the matsurface of substrate
Deposited on matsurface substrate and substrate matsurface by Deposited By Dc Magnetron Sputtering system The double-deck Mo structure that roughness is identical, thickness is 600nm as back electrode 2；
Step 3. makes light trapping structure CuInGaSe absorbed layer on the surface of back electrode
Put into vacuum chamber after being cleaned by the titanium foil being shaped with back electrode, use traditional coevaporation three step Method makes CuInGaSe absorbed layer on back electrode；Matsurface CIGS is formed thin on back electrode Film, using concentration is the NaOH solution of 1.5mol/L, and corrosion temperature is the corrosion alkali of 85 DEG C Liquid shows that to CIGS thin-film layer carries out corrosion treatmentCorrosion Science, until CIGS thin-film surface is equal Root mean square roughness is below 20nm's, forms the light trapping structure CIGS that thickness is 1 μm Absorbed layer 3；
Step 4. makes CIGS thin-film solar cell
Cushion is made the most successively on light trapping structure CuInGaSe absorbed layer 4, i-ZnO layer 5, transparent window layer 6, antireflection layer 7 and gate line electrode 8, wherein buffer Layer includes N-shaped the oneth Zn (O, S) cushion thick for 25nm and N-shaped the 2nd ZnO of 50nm thickness Cushion, the thickness of described i-ZnO layer is 50nm, and transparent window layer includes that thickness is respectively First graphene layer of 150nm, 50nm and 150nm, nano metal layer and the second stone Ink alkene layer, antireflection layer includes thickness respectively 50nm, 100nm and 50nm first dioxy SiClx layer, nanometer titanium dioxide layer and the second silicon dioxide layer, described gate line electrode is 2 μ The Ni-Al that m is thick, completes a kind of CIGS thin-film solar cell of the present invention as shown in Figure 1 Manufacturing process.
Although the preferred embodiments of the present invention being described above in conjunction with accompanying drawing, but this Bright being not limited to above-mentioned detailed description of the invention, above-mentioned detailed description of the invention is only signal Property, be not restrictive, those of ordinary skill in the art under the enlightenment of the present invention, In the case of without departing from present inventive concept and scope of the claimed protection, it is also possible to make very Multi-form.Within these belong to protection scope of the present invention.

Claims (3)

1. a CIGS thin-film solar cell, includes the most successively: substrate, back electrode, CuInGaSe absorbed layer, cushion, i-ZnO layer, transparent window layer, antireflection layer and grid line Electrode, it is characterised in that: described substrate is positioned at the r.m.s. roughness of back electrode one side and is 80-120nm, described back electrode two sides r.m.s. roughness all be positioned at substrate one side the back of the body electricity The face that r.m.s. roughness CuInGaSe absorbed layer identical, described in pole contacts with back electrode and back of the body electricity The r.m.s. roughness of pole-face is identical, CuInGaSe absorbed layer another side r.m.s. roughness is Below 20nm, the thickness of CuInGaSe absorbed layer thick is≤1 μm, and cushion includes Oneth Zn (O, S) cushion and the second ZnO buffer, transparent window layer includes the first Graphene Layer, nano metal layer and the second graphene layer, antireflection layer include the first silicon dioxide layer, Nanometer titanium dioxide layer and the second silicon dioxide layer.
A kind of CIGS thin-film solar cell the most according to claim 1, it is characterised in that: Described back electrode is double-deck Mo structure, and the thickness of back electrode thick is 600nm.
A kind of CIGS thin-film solar cell the most according to claim 1, it is characterised in that: A described Zn (O, S) cushion is N-shaped Zn (O, the S) cushion that 25nm is thick, described the Two ZnO buffer are the N-shaped ZnO buffer that 50nm is thick；The thickness of described i-ZnO layer is 50nm；The thickness of described first graphene layer, nano metal layer and the second graphene layer divides Wei 150nm, 50nm and 150nm；Described first silicon dioxide layer, nanometer titanium dioxide The thickness of titanium layer and the second silicon dioxide layer 50nm, 100nm and 50nm respectively；Institute State the Ni-Al that gate line electrode is 2 μ m-thick.
CN201610237968.5A 2016-04-14 2016-04-14 CIGS thin film solar cell Pending CN105870214A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110061088A (en) * 2019-04-26 2019-07-26 潮州市亿加光电科技有限公司 A kind of CIGS solar film battery of flexible substrates and preparation method thereof
WO2019205458A1 (en) * 2018-04-28 2019-10-31 北京铂阳顶荣光伏科技有限公司 Fabrication method for copper indium gallium selenium solar cell assembly and copper indium gallium selenium solar cell assembly
CN110416326A (en) * 2018-04-28 2019-11-05 北京铂阳顶荣光伏科技有限公司 A kind of production method of copper indium gallium selenium solar cell component
CN112071946A (en) * 2019-05-21 2020-12-11 北京铂阳顶荣光伏科技有限公司 Preparation method of thin-film solar cell

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CN103943691A (en) * 2014-04-15 2014-07-23 浙江冠旗纳米科技有限公司 Self-cleaning solar cell anti-reflective coating
CN103943697A (en) * 2014-03-28 2014-07-23 京东方科技集团股份有限公司 Flexible and transparent solar cell and preparation method thereof
CN104584234A (en) * 2012-08-23 2015-04-29 Lg伊诺特有限公司 Solar cell and method of fabricating the same

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1820358A (en) * 2003-05-08 2006-08-16 索里布罗股份公司 A thin-film solar cell
CN104584234A (en) * 2012-08-23 2015-04-29 Lg伊诺特有限公司 Solar cell and method of fabricating the same
CN203721739U (en) * 2013-12-31 2014-07-16 中国电子科技集团公司第十八研究所 CIGS film solar battery
CN103943697A (en) * 2014-03-28 2014-07-23 京东方科技集团股份有限公司 Flexible and transparent solar cell and preparation method thereof
CN103943691A (en) * 2014-04-15 2014-07-23 浙江冠旗纳米科技有限公司 Self-cleaning solar cell anti-reflective coating

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019205458A1 (en) * 2018-04-28 2019-10-31 北京铂阳顶荣光伏科技有限公司 Fabrication method for copper indium gallium selenium solar cell assembly and copper indium gallium selenium solar cell assembly
CN110416326A (en) * 2018-04-28 2019-11-05 北京铂阳顶荣光伏科技有限公司 A kind of production method of copper indium gallium selenium solar cell component
CN110061088A (en) * 2019-04-26 2019-07-26 潮州市亿加光电科技有限公司 A kind of CIGS solar film battery of flexible substrates and preparation method thereof
CN110061088B (en) * 2019-04-26 2021-03-23 潮州市亿加光电科技有限公司 CIGS solar thin film cell with flexible substrate and preparation method thereof
CN112071946A (en) * 2019-05-21 2020-12-11 北京铂阳顶荣光伏科技有限公司 Preparation method of thin-film solar cell

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Application publication date: 20160817

WD01 Invention patent application deemed withdrawn after publication