CN105830221A - 反向传导半导体装置 - Google Patents
反向传导半导体装置 Download PDFInfo
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- CN105830221A CN105830221A CN201480070644.6A CN201480070644A CN105830221A CN 105830221 A CN105830221 A CN 105830221A CN 201480070644 A CN201480070644 A CN 201480070644A CN 105830221 A CN105830221 A CN 105830221A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 230000004888 barrier function Effects 0.000 claims description 15
- 238000009413 insulation Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000000694 effects Effects 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
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- H—ELECTRICITY
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- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
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- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
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- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- H—ELECTRICITY
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- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP13199429.5 | 2013-12-23 | ||
EP13199429 | 2013-12-23 | ||
EP14163376.8 | 2014-04-03 | ||
EP14163376 | 2014-04-03 | ||
PCT/EP2014/079007 WO2015097157A1 (en) | 2013-12-23 | 2014-12-22 | Reverse-conducting semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105830221A true CN105830221A (zh) | 2016-08-03 |
CN105830221B CN105830221B (zh) | 2017-11-03 |
Family
ID=53477604
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480070644.6A Active CN105830221B (zh) | 2013-12-23 | 2014-12-22 | 反向传导半导体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9553086B2 (zh) |
EP (1) | EP3087607B1 (zh) |
JP (1) | JP6118471B2 (zh) |
CN (1) | CN105830221B (zh) |
WO (1) | WO2015097157A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6351863B2 (ja) * | 2015-09-25 | 2018-07-04 | 三菱電機株式会社 | 半導体装置 |
CN111816708B (zh) * | 2020-09-01 | 2020-11-27 | 晟芯世科电力电子(南京)有限公司 | 一种抗浪涌SiC MOSFET器件及其制造方法 |
DE102021002618A1 (de) | 2021-05-19 | 2022-11-24 | Infineon Technologies Ag | Leistungshalbleitervorrichtung |
EP4199100A1 (en) | 2021-12-20 | 2023-06-21 | Hitachi Energy Switzerland AG | Reverse-conducting insulated gate bipolar transistor |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009099690A (ja) * | 2007-10-15 | 2009-05-07 | Denso Corp | 半導体装置 |
US8212283B2 (en) * | 2009-04-29 | 2012-07-03 | Abb Technology Ag | Reverse-conducting semiconductor device |
CN202977426U (zh) * | 2012-12-13 | 2013-06-05 | 中国科学院微电子研究所 | 一种逆导型igbt的背面版图布局 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005019178A1 (de) * | 2005-04-25 | 2006-11-02 | Infineon Technologies Ag | Halbleiterbauelement, insbesondere rückwärts leitender IGBT |
EP2184781A1 (en) * | 2008-11-05 | 2010-05-12 | ABB Technology AG | Reverse-conducting semiconductor device |
JP5045733B2 (ja) * | 2008-12-24 | 2012-10-10 | 株式会社デンソー | 半導体装置 |
JP5742711B2 (ja) * | 2011-12-28 | 2015-07-01 | 株式会社デンソー | 半導体装置 |
-
2014
- 2014-12-22 WO PCT/EP2014/079007 patent/WO2015097157A1/en active Application Filing
- 2014-12-22 EP EP14825149.9A patent/EP3087607B1/en active Active
- 2014-12-22 CN CN201480070644.6A patent/CN105830221B/zh active Active
- 2014-12-22 JP JP2016542160A patent/JP6118471B2/ja active Active
-
2016
- 2016-06-23 US US15/191,295 patent/US9553086B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009099690A (ja) * | 2007-10-15 | 2009-05-07 | Denso Corp | 半導体装置 |
US8212283B2 (en) * | 2009-04-29 | 2012-07-03 | Abb Technology Ag | Reverse-conducting semiconductor device |
CN202977426U (zh) * | 2012-12-13 | 2013-06-05 | 中国科学院微电子研究所 | 一种逆导型igbt的背面版图布局 |
Also Published As
Publication number | Publication date |
---|---|
JP6118471B2 (ja) | 2017-04-19 |
WO2015097157A1 (en) | 2015-07-02 |
EP3087607A1 (en) | 2016-11-02 |
US9553086B2 (en) | 2017-01-24 |
CN105830221B (zh) | 2017-11-03 |
EP3087607B1 (en) | 2017-12-13 |
US20160307888A1 (en) | 2016-10-20 |
JP2017500749A (ja) | 2017-01-05 |
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Effective date of registration: 20240116 Address after: Zurich, SUI Patentee after: Hitachi Energy Co.,Ltd. Address before: Swiss Baden Patentee before: Hitachi energy Switzerland AG |