CN105821391A - Controllable and rapid preparation method of selenized tungsten nanosheet thin-film material growing perpendicular to substrate - Google Patents
Controllable and rapid preparation method of selenized tungsten nanosheet thin-film material growing perpendicular to substrate Download PDFInfo
- Publication number
- CN105821391A CN105821391A CN201610407882.2A CN201610407882A CN105821391A CN 105821391 A CN105821391 A CN 105821391A CN 201610407882 A CN201610407882 A CN 201610407882A CN 105821391 A CN105821391 A CN 105821391A
- Authority
- CN
- China
- Prior art keywords
- substrate
- sputtering
- tungsten
- nano sheet
- film materials
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5866—Treatment with sulfur, selenium or tellurium
Abstract
The invention discloses a controllable and rapid preparation method of a selenized tungsten nanosheet thin-film material growing perpendicular to a substrate. The method comprises the steps that a tungsten thin film is generated on a quartz substrate through direct-current magnetron sputtering, and then a WSe2 nanosheet thin film growing perpendicular to the substrate is prepared through a rapid tungsten thin film selenizing method. The method is simple, rapid and low in cost, a large area of WSe2 nanosheet thin film materials growing perpendicular to the substrate can be rapidly prepared, and the requirements of electrolytic hydrogen production and catalytic application can be met.
Description
Technical field
The present invention relates to the preparation method of a kind of tungsten selenide thin film, particularly to the controlled fast preparation method of a kind of vertical substrate grown tungsten selenide nano sheet film materials, belong to technical field of semiconductor.
Background technology
Tungsten selenide (WSe2) it is the semi-conducting material of a kind graphite laminate structure, with the WSe that Se-W-Se close-packed hexagonal is tightly packed2Crystal relies on Van der Waals force to be combined into WSe2Material.WSe2The energy gap of thin-film material is 1-2eV, and (＞ 10 the highest to visible absorption efficiency5cm-1), can be as the absorbed layer of solaode and photoelectric chemical electrode material.General WSe2Polycrystal film material exists two kinds of texture: C axle ⊥ substrate grown texture (Van der Waals plane is parallel to substrate) and C axle ∥ substrate grown texture (Van der Waals plane is perpendicular to substrate), as shown in Figure 1.Texture (the vertical substrate grown WSe of C axle ∥ substrate2Nanometer sheet) film surface is made up of a lot of dangling bonds, the serious compound of photo-generate electron-hole can be caused in dangling bonds surface, affects photoelectric properties, but in electrolytic hydrogen production and electro-catalysis are applied, dangling bonds surface is avtive spot, and the texture degree increasing C axle ∥ substrate can promote catalysis activity.
-WaldauA etc. use " soft selenizing method " to prepare two kinds of different texture WSe at first2Thin film, it prepares the WSe of C axle ∥ substrate by controlling the thickness of selenylation reaction temperature and radio-frequency sputtering W film2Thin film, but this technique needs the longer selenizing time of 18-24 hour, inefficiency (ThinSolidFilms, 1991,200 (1): 157-164.)；VelazquezJM etc. utilize physical vapor transport to prepare the thin film of C axle ∥ substrate of applicable electrolytic hydrogen production on tungsten paper tinsel, but reaction uses WSe2Powder and WO2Cl2Etc. expensive raw materials, and two day response time is needed to have a strong impact on its popularization and application (JournalofElectroanalyticalChemistry, 2014,716 (3): 45-48).
Thus, develop a kind of method simple, quick, eco-friendly to prepare the WSe of C axle ∥ substrate2Thin film is extremely urgent.
Summary of the invention
The defect existed for the existing method preparing vertical substrate grown tungsten selenide nano sheet film materials, it is an object of the invention to be to provide a kind of simple, quickly, the low cost method of preparing vertical substrate grown tungsten selenide nanometer sheet thin film, the method can prepare large area vertical substrate grown tungsten selenide nano sheet film materials, can meet electrolytic hydrogen production and the demand of electro-catalysis application.
In order to realize above-mentioned technical purpose, technical scheme provides the controlled fast preparation method of a kind of vertical substrate grown tungsten selenide nano sheet film materials, and the method comprises the following steps:
1), after substrate is placed in magnetron sputtering indoor, described magnetron sputtering chamber is evacuated to 1.0 × 10-3Below Pa, with argon as working gas, with tungsten target material as sputtering source, the pressure of control working gas, in the range of 0.9Pa～10.0Pa, carries out magnetically controlled DC sputtering, generates W film at substrate surface；
2) adding selenium powder in open-top receptacle, by Surface Creation, the substrate cap of W film is on described open-top receptacle, and the selenium powder that the W film of substrate surface is in described open-top receptacle is placed；Being placed in hermetic container by described open-top receptacle, described hermetic container is placed in vacuum and is less than 10Pa, under conditions of temperature is 550 DEG C～1000 DEG C, carries out heat treatment again, and cooling to obtain final product.
Technical scheme mainly regulates and controls the microstructure of presoma W film by the process conditions controlling magnetically controlled DC sputtering W film, recycles quick selenizing technique to high-efficiency and prepares the vertical substrate grown tungsten selenide nanometer sheet thin film (WSe of C axle ∥ substrate2Thin film), to meet the application requirement of electrolytic hydrogen production and electro-catalysis.Inventor is found by numerous studies: the directivity of Van der Waals plane decides WSe2The growth texture of thin film, when Van der Waals plane parallel substrate, for the WSe of C axle ⊥ substrate2Thin film, when the vertical substrate of Van der Waals plane, for the WSe of C axle ∥ substrate2Thin film.WSe is prepared by W film selenizing method2Can cause the obvious volumetric expansion of W film in thin-film process, main expansion reason is Van der Waals plane and the insertion with parallel selenium atom layer, and expansion direction is mainly along C direction of principal axis.Numerous studies show: control the pressure of working gas in the range of 0.9Pa～10.0Pa, when carrying out magnetically controlled DC sputtering, under relatively hyperbar, the W film microstructure of preparation is more loose, Van der Waals plane and selenium atom layer in parallel is conducive to insert in W film along vertical substrate direction, thus, the Van der Waals plane of W film prepared by hyperbar beneficially vertical direction is the WSe of C axle ∥ substrate2Thin film.
Preferably scheme, the distance between described tungsten target material and described substrate is 3～20cm.
Preferably scheme, the power of described magnetically controlled DC sputtering is 40W～150W, biases as-200V～0V.
More preferably scheme, the described magnetically controlled DC sputtering time is 2～60min.
Preferably scheme, during magnetically controlled DC sputtering, underlayer temperature is room temperature～500 DEG C.
Preferably scheme, heat treatment time is 5～60 minutes.
Preferably scheme, the purity of described argon is not less than 99.9%.
Preferably scheme, the purity of described tungsten target material is not less than 99.99%.
Preferably scheme, the quartz substrate of the present invention typically need to use acetone and dehydrated alcohol etc. to carry out ultrasonic cleaning pretreatment.
The open-top receptacle that the present invention uses typically uses corundum material open-top receptacle, typically uses corundum crucible.
The present invention uses hermetic container to be typically also adopted by corundum material hermetic container, two corundum boats can be used to tip upside down on and constitute simple hermetic container together.
The heat treatment process of the present invention typically realizes in tube furnace, and tube furnace includes the quartz ampoule of vacuum-pumping.
Hinge structure, the beneficial effect that technical scheme is brought:
Technical scheme can obtain the WSe of pattern C regular, large-area axle ∥ substrate2Thin film.
Technical scheme is during magnetically controlled DC sputtering prepares presoma W film, it is easy to by controlling air pressure in the range of 0.9Pa～10.0Pa, it is achieved WSe2The regulation and control of film surface vertical lamellar amount of crystals, it is possible to obtain the WSe of the C axle ∥ substrate that different application requires2Thin film.
The WSe of the C axle ∥ substrate of the present invention2Thin film preparation process has the features such as simple, quick, low cost, it is easy to accomplish large area produces, and meets industrialization production requirements.
Accompanying drawing explanation
[Fig. 1] WSe2Film texture figure；
[Fig. 2] rapid selenium gasifying device figure and selenidation process；
The WSe of [Fig. 3] embodiment 1～3 gained2The surface SEM figure of thin film；
The WSe of [Fig. 4] embodiment 1～3 gained2Thin film X ray diffracting spectrum.
Detailed description of the invention
Following example are intended to further illustrate present invention rather than limit the scope of the invention.Embodiment 1
The present embodiment comprises the following steps:
(1) substrate processing
With 25mm × 25mm × 1mm quartz glass as substrate, it is sequentially placed into supersound process 15min in acetone and dehydrated alcohol, is then immersed in dehydrated alcohol, dry up stand-by with high pure nitrogen (99.999%) when being directly placed into sputtering chamber；
(2) magnetically controlled DC sputtering bilayer W film
Use the high purity tungsten target (99.995%) of a diameter of 60mm, utilize magnetically controlled DC sputtering to prepare W film.The vacuum of magnetron sputtering chamber is evacuated to less than or equal to 4.1 × 10-4Pa, target and substrate distance are set to 15.3cm, base reservoir temperature room temperature, and without sputtering bias-voltage, sputtering power is 120W, with high-purity argon gas (99.999%) as working gas, operating pressure is adjusted to 0.9Pa and sputters 10min, prepare W film.
(3) quickly selenizing
Weigh the high-purity selenium powder of 0.7g, put in 3mm corundum crucible, sputtering has lurching of W film be buckled on crucible, puts it into two and tip upside down on together, play in the corundum boat of certain airtight effect, then boat is put in tube furnace.Mechanical pump is utilized to be evacuated to quartz ampoule vacuum less than or equal to 1.0Pa.Not having sample area to be heated to 600 DEG C in slide rail stove, its body of heater is then being pushed into sample area and quickly heats sample, be incubated 30 minutes, heating terminates, and closes power supply, and sample naturally cools to room temperature.
Embodiment 2
In the present embodiment, the operating air pressure of the deposition of step (2) second layer W film is 2.0Pa, and other implementation conditions are identical with embodiment 1.
Embodiment 3
The present embodiment comprises the following steps:
(1) substrate processing
With 25mm × 25mm × 1mm quartz glass as substrate, it is sequentially placed into supersound process 15min in acetone and dehydrated alcohol, is then immersed in dehydrated alcohol, dry up stand-by with high pure nitrogen (99.999%) when being directly placed into sputtering chamber；
(2) magnetically controlled DC sputtering bilayer W film
Use the high purity tungsten target (99.995%) of a diameter of 60mm, utilize magnetically controlled DC sputtering to prepare W film.The vacuum of magnetron sputtering chamber is evacuated to less than or equal to 8.0 × 10-4Pa, target and substrate distance are set to 20cm, base reservoir temperature 300 DEG C, and sputtering bias-voltage is-100V, and sputtering power is 80W, with high-purity argon gas (99.999%) as working gas, operating pressure is adjusted to 5Pa and sputters 40min, prepare W film.
(3) quickly selenizing
Weigh the high-purity selenium powder of 0.7g, put in 3mm corundum crucible, sputtering has lurching of W film be buckled on crucible, puts it into two and tip upside down on together, play in the corundum boat of certain airtight effect, then boat is put in tube furnace.Mechanical pump is utilized to be evacuated to quartz ampoule vacuum less than or equal to 1.0Pa.Not having sample area to be heated to 820 DEG C in slide rail stove, its body of heater is then being pushed into sample area and quickly heats sample, be incubated 15 minutes, heating terminates, and closes power supply, and sample naturally cools to room temperature.Preparation
As it is shown on figure 3, the WSe to embodiment 1～3 preparation2Film surface has carried out SEM detection.Wherein, from the WSe of embodiment 12Fig. 3 .a and the WSe of embodiment 22Fig. 3 .b it will be seen that when other conditions are identical, low pressure W film the WSe prepared2The vertical flat crystal of film surface less (embodiment 1: Fig. 3 a).And along with the rising of air pressure, film surface flake crystalline density dramatically increases, the WSe of C axle ∥ base plane texture can be obtained2Thin film (embodiment 2: Fig. 3 b).
As shown in Figure 4, the WSe to embodiment 1～3 preparation2Film surface has carried out XRD detection.WSe by embodiment 12Fig. 4 .a and the WSe of embodiment 22In Fig. 4 .b, result is visible, when other conditions are identical, along with the rising of air pressure, the WSe prepared2Thin film (002) crystal orientation characteristic peak gradually weakens (embodiment 1 and 2).When air pressure reaches 5.0Pa, WSe2Thin film (002) crystal orientation characteristic peak is close to and disappears, only WSe2Thin film (100) (110) characteristic peak (embodiment 3), according to Fig. 1, it is thus achieved that the WSe of C axle ∥ base plane texture2Thin film.XRD result fits like a glove consistent with SEM result.
Claims (7)
1. the controlled fast preparation method of a vertical substrate grown tungsten selenide nano sheet film materials, it is characterised in that: comprise the following steps:
1), after substrate is placed in magnetron sputtering indoor, described magnetron sputtering chamber is evacuated to 1.0 × 10-3Below Pa, with argon as working gas, with tungsten target material as sputtering source, the pressure of control working gas, in the range of 0.9Pa～10.0Pa, carries out magnetically controlled DC sputtering, generates W film at substrate surface；
2) adding selenium powder in open-top receptacle, by Surface Creation, the substrate cap of W film is on described open-top receptacle, and the selenium powder that the W film of substrate surface is in described open-top receptacle is placed；Being placed in hermetic container by described open-top receptacle, described hermetic container is placed in vacuum and is less than 10Pa, under conditions of temperature is 550 DEG C～1000 DEG C, carries out heat treatment again, and cooling to obtain final product.
The controlled fast preparation method of vertical substrate grown tungsten selenide nano sheet film materials the most according to claim 1, it is characterised in that: the distance between described tungsten target material and described substrate is 3～20cm.
The controlled fast preparation method of vertical substrate grown tungsten selenide nano sheet film materials the most according to claim 1, it is characterised in that: the power of described magnetically controlled DC sputtering is 40W～150W, biases as-200V～0V.
4. according to the controlled fast preparation method of the vertical substrate grown tungsten selenide nano sheet film materials described in claim 1 or 3, it is characterised in that: the described magnetically controlled DC sputtering time is 2～60min.
The controlled fast preparation method of vertical substrate grown tungsten selenide nano sheet film materials the most according to claim 1, it is characterised in that: during magnetically controlled DC sputtering, underlayer temperature is room temperature～500 DEG C.
The controlled fast preparation method of vertical substrate grown tungsten selenide nano sheet film materials the most according to claim 1, it is characterised in that: heat treatment time is 5～60 minutes.
7. according to the controlled fast preparation method of the vertical substrate grown tungsten selenide nano sheet film materials described in any one of claim 1,2,3,5 or 6, it is characterised in that: the purity of described argon is not less than 99.9%；The purity of described tungsten target material is not less than 99.99%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610407882.2A CN105821391B (en) | 2016-06-12 | 2016-06-12 | A kind of controllable fast preparation method of vertical substrate grown tungsten selenide nano sheet film materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610407882.2A CN105821391B (en) | 2016-06-12 | 2016-06-12 | A kind of controllable fast preparation method of vertical substrate grown tungsten selenide nano sheet film materials |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105821391A true CN105821391A (en) | 2016-08-03 |
| CN105821391B CN105821391B (en) | 2018-06-29 |
Family
ID=56532059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610407882.2A Active CN105821391B (en) | 2016-06-12 | 2016-06-12 | A kind of controllable fast preparation method of vertical substrate grown tungsten selenide nano sheet film materials |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105821391B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106835062A (en) * | 2017-01-22 | 2017-06-13 | 福州大学 | A kind of method that utilization laser quickly prepares Transition-metal dichalcogenide |
| CN107475694A (en) * | 2017-06-20 | 2017-12-15 | 广东工业大学 | A kind of method and its application that two tungsten selenide semiconductive thin films are prepared on FTO substrates |
| CN108546924A (en) * | 2018-05-14 | 2018-09-18 | 中南大学 | Two selenizing molybdenums/graphite composite material and its preparation method and application |
| CN110195214A (en) * | 2019-07-15 | 2019-09-03 | 中南大学 | A kind of MSe2Thin-film material and its preparation method and application |
| CN111690897A (en) * | 2020-06-23 | 2020-09-22 | 南京大学 | Tungsten diselenide thin film of single primitive cell layer and growth method thereof |
| CN114645247A (en) * | 2022-03-23 | 2022-06-21 | 中南大学 | Iron diselenide nano film with controllable shape as nano rod and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103757602A (en) * | 2014-01-13 | 2014-04-30 | 清华大学 | Method for preparing single-layer molybdenum disulfide film |
| CN103924213A (en) * | 2014-04-29 | 2014-07-16 | 清华大学 | Method for preparing molybdenum disulfide film for field emission device |
| CN104058458A (en) * | 2014-07-07 | 2014-09-24 | 中国科学技术大学 | Method for preparing high-quality single/double-layer controllable molybdenum disulfide |
| CN104846434A (en) * | 2015-04-10 | 2015-08-19 | 武汉大学 | Two-dimensional transition metal disulfides monocrystalline, and preparation method and applications thereof |
| US20160093491A1 (en) * | 2014-09-29 | 2016-03-31 | University Of North Texas | LARGE SCALE AND THICKNESS-MODULATED MoS2 NANOSHEETS |
-
2016
- 2016-06-12 CN CN201610407882.2A patent/CN105821391B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103757602A (en) * | 2014-01-13 | 2014-04-30 | 清华大学 | Method for preparing single-layer molybdenum disulfide film |
| CN103924213A (en) * | 2014-04-29 | 2014-07-16 | 清华大学 | Method for preparing molybdenum disulfide film for field emission device |
| CN104058458A (en) * | 2014-07-07 | 2014-09-24 | 中国科学技术大学 | Method for preparing high-quality single/double-layer controllable molybdenum disulfide |
| US20160093491A1 (en) * | 2014-09-29 | 2016-03-31 | University Of North Texas | LARGE SCALE AND THICKNESS-MODULATED MoS2 NANOSHEETS |
| CN104846434A (en) * | 2015-04-10 | 2015-08-19 | 武汉大学 | Two-dimensional transition metal disulfides monocrystalline, and preparation method and applications thereof |
Non-Patent Citations (1)
| Title |
|---|
| J.POUZET ET AL.: "Preparation and characterization of tungsten diselenide thin films", 《THIN SOLID FILMS》 * |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106835062A (en) * | 2017-01-22 | 2017-06-13 | 福州大学 | A kind of method that utilization laser quickly prepares Transition-metal dichalcogenide |
| CN107475694A (en) * | 2017-06-20 | 2017-12-15 | 广东工业大学 | A kind of method and its application that two tungsten selenide semiconductive thin films are prepared on FTO substrates |
| CN107475694B (en) * | 2017-06-20 | 2019-10-18 | 广东工业大学 | A kind of method and its application preparing two tungsten selenide semiconductive thin films on FTO substrate |
| CN108546924A (en) * | 2018-05-14 | 2018-09-18 | 中南大学 | Two selenizing molybdenums/graphite composite material and its preparation method and application |
| CN110195214A (en) * | 2019-07-15 | 2019-09-03 | 中南大学 | A kind of MSe2Thin-film material and its preparation method and application |
| CN111690897A (en) * | 2020-06-23 | 2020-09-22 | 南京大学 | Tungsten diselenide thin film of single primitive cell layer and growth method thereof |
| CN111690897B (en) * | 2020-06-23 | 2021-06-08 | 南京大学 | Tungsten diselenide thin film of single primitive cell layer and growth method thereof |
| CN114645247A (en) * | 2022-03-23 | 2022-06-21 | 中南大学 | Iron diselenide nano film with controllable shape as nano rod and preparation method thereof |
| CN114645247B (en) * | 2022-03-23 | 2022-11-04 | 中南大学 | Iron diselenide nano film with controllable shape as nano rod and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105821391B (en) | 2018-06-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105821391A (en) | Controllable and rapid preparation method of selenized tungsten nanosheet thin-film material growing perpendicular to substrate | |
| CN105826362B (en) | A kind of gallium oxide nano-wire array and preparation method thereof | |
| Shi et al. | Room temperature preparation of high performance AZO films by MF sputtering | |
| CN108203090B (en) | Preparation method of graphene | |
| CN103165748B (en) | A kind of method preparing copper-zinc-tin-sulfur solar battery obsorbing layer thin film | |
| CN106868469B (en) | A method of non-metal catalyst prepares graphene in silicon substrate | |
| CN106148911A (en) | A kind of controlled method preparing the fractal molybdenum bisuphide of monolayer | |
| CN104746137B (en) | A kind of preparation method of the molybdenum disulfide film of stratiform | |
| CN109161844B (en) | Boron-carbon-nitrogen film enveloping high-orientation boron nitride nanocrystalline and preparation method thereof | |
| JP6190562B2 (en) | Graphene growth method | |
| Li et al. | Texture control and growth mechanism of WSe2 film prepared by rapid selenization of W film | |
| Hammoodi et al. | Structural and optical properties of CuO thin films prepared via RF magnetron sputtering | |
| CN102330055B (en) | Method for preparing titanium nitride epitaxial film serving as electrode material | |
| CN109095461B (en) | Preparation method of single-layer graphene | |
| CN113564699B (en) | Method for growing single-layer single crystal graphene based on Cu2O dielectric layer | |
| CN102226294B (en) | Modulation method for silicon-based GaN crystal structure with optimal field emission performance | |
| Xingwen et al. | Study on ZnO thin films deposited on sol–gel grown ZnO buffer by RF magnetron sputtering | |
| CN104058446A (en) | Low-dimensional zinc oxide nano material and low-temperature plasma preparation method thereof | |
| CN102828152A (en) | Preparation method of Mo film with low resistance rate | |
| CN101660132B (en) | Method for preparing silicon-carbon hydride film by magnetron sputtering | |
| CN105132875B (en) | A kind of method that diffusion method prepares high concentration gradient AZO monocrystalline conductive films | |
| CN113969393A (en) | Amorphous carbon film with adjustable band gap and preparation method thereof | |
| CN111826610B (en) | Method for preparing graphene at low temperature by using amorphous carbon | |
| He et al. | Enhanced high reflectance SiO2-Ag-SiO2 thin film adhesion for concentrating solar power reflector | |
| CN107747130A (en) | A kind of method that phthalocyanine monocrystal thin films are prepared in the grapheme modified substrate of copper film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20180326 Address after: 341000 Jiangxi city of Ganzhou province Chongyi County tower Applicant after: Chongyi Zhangyuan Tungsten Co.,Ltd. Address before: 341000 Jiangxi city of Ganzhou province Chongyi County tower Applicant before: Chongyi Zhangyuan Tungsten Co.,Ltd. Applicant before: Central South University |
|
| TA01 | Transfer of patent application right | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |