CN105821384B - The method that polynary target double target co-sputtering prepares copper-zinc-tin-sulfur film - Google Patents
The method that polynary target double target co-sputtering prepares copper-zinc-tin-sulfur film Download PDFInfo
- Publication number
- CN105821384B CN105821384B CN201510612081.5A CN201510612081A CN105821384B CN 105821384 B CN105821384 B CN 105821384B CN 201510612081 A CN201510612081 A CN 201510612081A CN 105821384 B CN105821384 B CN 105821384B
- Authority
- CN
- China
- Prior art keywords
- target
- tin
- sputtering
- zinc
- czts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Laminated Bodies (AREA)
Abstract
The invention discloses a kind of methods that polynary target double target co-sputtering prepares copper-zinc-tin-sulfur (CZTS) film, include the following steps：1）The cleaning of soda-lime glass (SLG)；2）The molybdenum electrode of 1 μ m-thick is plated on the clean surfaces SLG；3）It sputters to obtain copper-zinc-tin-sulfur film preformed layer with copper and tin sulphur (CTS) target and zinc sulphide (ZnS) target；4）The preformed layer prepared under above-mentioned condition is subjected to alloy treatment；5）Preformed layer vulcanization annealing (570 ~ 590 DEG C, 25 35min) Jing Guo alloy treatment in step 4 is obtained into CZTS films；It is compared to traditional more targets (simple substance target or binary target) substep sputtering or more targets (simple substance target or binary target) cosputtering advantage：Formation mechenism (CTS+ZnS=CZTS) of this method based on CZTS, it only needs a Cu Sn S target and a ZnS target co-sputterings preformed layer and CZTS films can be obtained by subsequent annealing, this method technical process is simple, film forming efficiency is high, can effectively inhibit copper sulphur phase (Cu2‑x) and sulphur tin phase (Sn S2‑xS the uniformity and single phase property of CZTS films greatly improved in generation).
Description
Technical field
The method that polynary target double target co-sputtering prepares copper-zinc-tin-sulfur film.
Background technology
Novel quaternary compound semiconductor copper-zinc-tin-sulfur (Cu2ZnSnS4, abridge CZTS) with the list that is most widely used at present
Tie absorbed layer material copper indium gallium selenide (Cu (In, Ga) Se of hull cell2, abridge CIGS) and yellow copper structure is belonged to, difference exists
Gallium (Ga) and indium (In) in CIGS are substituted with tin (Sn) and zinc (Zn) in CZTS, with sulphur (S) substitutes selenium (Se) and is constituted, and again
Without containing your dilute element and toxic element.Compared with CIGS, the band gap (1.5eV) of CZTS has with solar spectrum more preferably
Match, and CZTS has the outstanding absorption coefficient of light same as CIGS（More than 104cm-1）, theoretical efficiency up to 32.2%, due to
Containing a large amount of dilute your element (Ga, In) and toxic element (Se) in CIGS, so CZTS, which is generally considered, substitutes CIGS's
One of optimal material.The efficiency of solar cell based on CZTS films has reached 8.4% within the short time less than 10 years, has
Prestige breaks through 10% in the near future.The vacuum method for preparing copper-zinc-tin-sulfur film of document report includes mainly sulphur after vacuum evaporation at present
Change and both technology paths of vacuum sputtering after cure.The film quality that wherein prepared by vacuum evaporation is higher, but the technology is most
Big problem is that the utilization rate of evaporation source material is extremely low, is evaporated seriously polluted between each evaporation source in chamber.And prepared by vacuum sputtering
The easily controllable film thickness of CZTS preformed layers, and there is no the mutual pollutions of various targets in chamber, but there are preset layer component and targets
It cannot be replicated completely between component, the problems such as reproducibility is poor.Based on this consideration, researcher in this field wishes to pass through simplification
Technology difficulty reduces manufacturing cost, improves technique reproducibility to prepare good CZTS films.According to the formation machine of CZTS
System, i.e. Cu2SnS3+ZnS=Cu2ZnSnS4, so CZTS preformed layers are prepared using CTS targets and ZnS target co-sputterings, as long as subsequently
Vulcanization annealing temperature do not exceed 600 DEG C, can effectively reduce and prevent Cu in vulcanizing annealing process2-xS、Sn2-xThe production of S
It is raw, because there's almost no the simple substance and Cu of Cu and Sn in preformed layer2-xS、Sn2-xSecondly S binary sulfides are sent out according to experiment
Existing, the content of Cu is relatively on the low side in the film obtained when sputtering CTS targets, so by the component that CTS targets are copper-rich, secondly requires
Finally obtained CZTS films are poor copper zinc-rich (Cu/ (Zn+Sn)=0.85 ~ 0.95, Zn/Sn=1.05 ~ 1.15) phase, so ZnS
Zn contents in target are higher, and the high temperature in sputtering process is primarily used to diffusion sodium ion with hyperbar and eliminates stress.It is more
The Mo back electrodes of layer structure allow substrate primarily to meet the requirement of high conductivity and stress release after having plated Mo back electrodes
It is toasted 30 minutes at 220 DEG C, main purpose, which is the sodium ion in allowing SLG, can fully diffuse into Mo electrode layers, make sodium ion
CZTS films can be fully diffused into subsequent heat treatment process, and sodium ion effect is maximized.Sulphur is carried out to preformed layer
Alloy heat treatment before annealing helps to strengthen the counterdiffusion of CTS and ZnS in preformed layer, makes finally to vulcanize obtained CZTS thin
The elemental constituent of film is evenly distributed along longitudinal direction.
Invention content
In view of the drawbacks described above of the prior art, technical problem to be solved by the invention is to provide a kind of simple processs can
It leans on, the copper-zinc-tin-sulfur film preparation method that component is controllable and reproducibility is good.
The method that a kind of polynary target double target co-sputtering according to the present invention prepares copper-zinc-tin-sulfur film is real according to the following steps
It applies：
（1）Substrate cleans：By soda-lime glass successively use cleanser, acetone, alcohol, deionized water be cleaned by ultrasonic then
30min is impregnated in potassium bichromate solution, after be cleaned by ultrasonic again with deionized water, be used in combination nitrogen to dry up.
（2）Sputtering prepares the Mo back electrodes of multilayered structure；
（3）The SLG substrates for having plated Mo electrodes are subjected to baking (220 DEG C, 30min) in situ；
（4）By radio-frequency sputtering, with two kinds of multi-element compounds of copper and tin sulphur (CTS) target and zinc sulphide (ZnS) target, deposition obtains
The CZTS preformed layers of 750nm or so；
（5）The alloy of preformed layer：The copper-zinc-tin-sulfur preformed layer prepared under above-mentioned condition is carried out under nitrogen protection under normal pressure
Alloy (soft annealing) processing；
（6）By the preformed layer Jing Guo alloy treatment in step 4 be put into vulcanizing oven carried out under nitrogen protection under normal pressure vulcanization move back
CZTS films are obtained after fiery (570 ~ 590 DEG C, 25 ~ 35 minutes) and natural cooling；
The present invention is prepared in the method for copper-zinc-tin-sulfur film using a kind of polynary target double target co-sputtering such as step（1）Described
The supersaturated potassium bichromate solution that potassium bichromate solution is 80 ~ 90 DEG C.
The present invention is prepared in the method for copper-zinc-tin-sulfur film using a kind of polynary target double target co-sputtering such as step（2）Described
The Mo back electrodes of multilayered structure are successively in 1.5Pa (10min), 1.0Pa (15min), 0.5Pa (25min), 0.3Pa
The operating air pressure of (45min), d.c. sputtering obtains under conditions of 160 DEG C of underlayer temperature.
The present invention is prepared in the method for copper-zinc-tin-sulfur film using a kind of polynary target double target co-sputtering such as step（3）It is described
The SLG for having plated Mo electrodes is toasted 30 minutes at 220 DEG C, the sodium ion in SLG is made fully to diffuse into Mo back electrodes.
The present invention is prepared in the method for copper-zinc-tin-sulfur film using a kind of polynary target double target co-sputtering such as step（4）Described
Cu in the more first targets of Cu-Sn-S:Sn:The atomic ratio of S is 2.3:1:4.
The present invention is prepared in the method for copper-zinc-tin-sulfur film using a kind of polynary target double target co-sputtering such as step（4）Described
Zn in ZnS binary targets:The atomic ratio of S is 1.25:1.
The present invention is prepared in the method for copper-zinc-tin-sulfur film using a kind of polynary target double target co-sputtering such as step（5）Described
CZTS preformed layers need to pass through 20 ~ 30min, 200 ~ 250 DEG C of temperature, the alloy treatment under nitrogen protection under normal pressure.
The present invention is prepared in the method for copper-zinc-tin-sulfur film using a kind of polynary target double target co-sputtering such as step（6）Described
When preformed layer vulcanized alloy temperature in 25 ~ 35 minutes from 570 DEG C of linear changes to 590 DEG C.
Description of the drawings
Curve a, b and c, d in Fig. 1 are respectively the SEM figures of the copper-zinc-tin-sulfur film absorbed layer prepared by embodiment 1,2.
Sample 1,2 in table 1 is respectively the EDS component analysis knots for applying the copper-zinc-tin-sulfur film absorbed layer prepared by example 1,2
Fruit.
Curve 1,2 in Fig. 2 is respectively the XRD of the copper-zinc-tin-sulfur film absorbed layer prepared by embodiment 1,2.
Curve 1,2 in Fig. 3 is respectively the Raman of the copper-zinc-tin-sulfur film absorbed layer prepared by embodiment 1,2.
| Embodiment | Cu(at%) | Zn(at%) | Sn(at%) | S(at%) | Cu/(Zn+Sn) | Zn/Sn |
| 1 | 22.92 | 13.13 | 12.36 | 51.59 | 0.90 | 1.06 |
| 2 | 22.83 | 13.49 | 12.08 | 51.60 | 0.89 | 1.12 |
Specific implementation mode
Embodiment 1
（1）Substrate cleans：Soda-lime glass is used successively detergent, acetone, alcohol, deionized water are cleaned by ultrasonic, dichromic acid
Potassium solution impregnates 30min, is used in combination nitrogen drying spare；
（2）Cleaned soda-lime glass is put into sputtering chamber, base vacuum is evacuated to 5.0*10-4Pa, power 150W,
The Mo back electrodes of d.c. sputtering multilayered structure, sputtering pressure are respectively 1.5Pa (10min), 1.0Pa (15min), 0.5Pa
(25min), 0.3Pa (45min) is obtained 1 μm of molybdenum back electrode film by above-mentioned requirements on soda-lime glass.Mo back of the body electricity is plated
Temperature is extremely risen into 220 DEG C of baking 30min afterwards.
（3）The preparation of copper-zinc-tin-sulfur film initialization layer：Using Cu:Sn:S=2.3:1:4 CTS targets and Cu:Zn=1.25:1
ZnS targets carry out double-target radio frequency cosputtering, base vacuum is same as above, in sputtering power 70W, 150 DEG C of underlayer temperature, operating air pressure
100min is sputtered under conditions of 0.8Pa, sample stage rotating speed 7rpm, obtains the CZTS initialization layers of about 750nm.
（4）The preparation of copper-zinc-tin-sulfur film absorbed layer：By step（3）Prepared CZTS is put into annealing furnace at 220 DEG C, often
It presses, alloy 30min under nitrogen protection takes out after cooling.
（5）CZTS preformed layers Jing Guo alloy treatment are put into semi-enclosed graphite boat together with the sublimed sulfur of 50mg, then
Graphite boat is pushed into the quartz ampoule of high temperature vulcanized stove at 570 ~ 590 DEG C, normal pressure, vulcanization annealing 30min under nitrogen protection.It is natural
It is cooled to room temperature to obtain CZTS films.
Embodiment 2
（1）Substrate cleans：Soda-lime glass is used successively detergent, acetone, alcohol, deionized water are cleaned by ultrasonic, dichromic acid
Potassium solution impregnates 30min, is used in combination nitrogen drying spare；
（2）Cleaned soda-lime glass is put into sputtering chamber, base vacuum is evacuated to 5.0*10-4Pa, power 150W,
The Mo back electrodes of d.c. sputtering multilayered structure, sputtering pressure are respectively 1.5Pa (10min), 1.0Pa (15min), 0.5Pa
(25min), 0.3Pa (45min) is obtained 1 μm of molybdenum back electrode film by above-mentioned requirements on soda-lime glass.Mo back of the body electricity is plated
Temperature is extremely risen into 220 DEG C of baking 30min afterwards.
（3）The preparation of copper-zinc-tin-sulfur film initialization layer：Using Cu:Sn:S=2.3:1:4 CTS targets and Cu:Zn=1.25:1
ZnS targets carry out double-target radio frequency cosputtering, base vacuum is same as above, in sputtering power 70W, 150 DEG C of underlayer temperature, operating air pressure
100min is sputtered under conditions of 1.0Pa, sample stage rotating speed 7rpm, obtains the CZTS initialization layers of about 750nm.
（4）The preparation of copper-zinc-tin-sulfur film absorbed layer：By step（3）Prepared CZTS is put into annealing furnace at 250 DEG C, often
It presses, alloy 30min under nitrogen protection takes out after cooling.
（5）CZTS preformed layers Jing Guo alloy treatment are put into semi-enclosed graphite boat together with the sublimed sulfur of 50mg, then
Graphite boat is pushed into the quartz ampoule of high temperature vulcanized stove at 570 ~ 590 DEG C, normal pressure, vulcanization annealing 25min under nitrogen protection.It is natural
It is cooled to room temperature to obtain CZTS films.
Claims (3)
1. a kind of method that polynary target double target co-sputtering prepares copper-zinc-tin-sulfur film, which is characterized in that include the following steps：
(1) substrate cleans：Soda-lime glass is used successively cleanser, acetone, alcohol, deionized water are cleaned by ultrasonic and then in weight chromium
Impregnate 30min in sour potassium solution, after be cleaned by ultrasonic again with deionized water, be used in combination nitrogen to dry up；
(2) sputtering prepares the Mo back electrodes of multilayered structure；
(3) the SLG substrates for having plated Mo electrodes are subjected to baking in situ；
(4) by radio-frequency sputtering, with two kinds of multi-element compounds of copper and tin sulphur target and zinc sulphide target, the CZTS that deposition obtains 750nm is pre-
Preparative layer；
(5) preformed layer Jing Guo alloy treatment in step 4 is put into vulcanizing oven and carries out vulcanization annealing under nitrogen protection under normal pressure, and
CZTS films are obtained after natural cooling；
The supersaturated potassium bichromate solution that potassium bichromate solution described in step (1) is 80~90 DEG C；
The Mo back electrodes of multilayered structure described in step (2) are successively in the operating air pressure of 1.5Pa, 1.0Pa, 0.5Pa, 0.3Pa, lining
D.c. sputtering obtains under conditions of 160 DEG C of bottom temperature, and wherein operating air pressure 1.5Pa sputtering times are 10min, operating air pressure
1.0Pa sputtering times are 15min, and operating air pressure 0.5Pa sputtering times are 25min, and operating air pressure 0.3Pa sputtering times are
45min；
Step (3) toasts the SLG for having plated Mo electrodes 30 minutes at 220 DEG C, and the sodium ion in SLG is made fully to diffuse into Mo
Back electrode；
CZTS preformed layers described in step (5) need to pass through 20~30min, and 200~250 DEG C of temperature is closed under nitrogen protection under normal pressure
Gold processing；When the described preformed layer vulcanized alloy temperature in 25~35 minutes from 570 DEG C of linear changes to 590 DEG C.
2. the method that a kind of polynary target double target co-sputtering according to claim 1 prepares copper-zinc-tin-sulfur film, feature exist
The Cu in the copper and tin sulphur target:Sn:The atomic ratio of S is 2.3:1:4.
3. the method that a kind of polynary target double target co-sputtering according to claim 1 prepares copper-zinc-tin-sulfur film, feature exist
The Zn in the zinc sulphide target:The atomic ratio of S is 1.25:1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510612081.5A CN105821384B (en) | 2015-09-24 | 2015-09-24 | The method that polynary target double target co-sputtering prepares copper-zinc-tin-sulfur film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510612081.5A CN105821384B (en) | 2015-09-24 | 2015-09-24 | The method that polynary target double target co-sputtering prepares copper-zinc-tin-sulfur film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105821384A CN105821384A (en) | 2016-08-03 |
| CN105821384B true CN105821384B (en) | 2018-08-28 |
Family
ID=56514441
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510612081.5A Expired - Fee Related CN105821384B (en) | 2015-09-24 | 2015-09-24 | The method that polynary target double target co-sputtering prepares copper-zinc-tin-sulfur film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105821384B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109560159A (en) * | 2018-11-02 | 2019-04-02 | 云南师范大学 | A kind of copper-zinc-tin-sulfur film solar cell |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102251235A (en) * | 2011-07-07 | 2011-11-23 | 中南大学 | Preparation method of Cu-Zn-Sn-S thin film |
| CN103343318A (en) * | 2013-07-03 | 2013-10-09 | 深圳先进技术研究院 | Preparation method of light absorption layer of solar battery |
| CN103746034A (en) * | 2013-12-30 | 2014-04-23 | 电子科技大学 | Method for preparing copper-zinc-tin-sulfur thin-film solar cell through interfacial modification |
| CN104404456A (en) * | 2014-11-19 | 2015-03-11 | 北京四方继保自动化股份有限公司 | Preparation method of CZTS (copper-zinc-tin-sulfur) quaternary target |
-
2015
- 2015-09-24 CN CN201510612081.5A patent/CN105821384B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102251235A (en) * | 2011-07-07 | 2011-11-23 | 中南大学 | Preparation method of Cu-Zn-Sn-S thin film |
| CN103343318A (en) * | 2013-07-03 | 2013-10-09 | 深圳先进技术研究院 | Preparation method of light absorption layer of solar battery |
| CN103746034A (en) * | 2013-12-30 | 2014-04-23 | 电子科技大学 | Method for preparing copper-zinc-tin-sulfur thin-film solar cell through interfacial modification |
| CN104404456A (en) * | 2014-11-19 | 2015-03-11 | 北京四方继保自动化股份有限公司 | Preparation method of CZTS (copper-zinc-tin-sulfur) quaternary target |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105821384A (en) | 2016-08-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7018858B2 (en) | Light absorbing layer producing method | |
| JP4384237B2 (en) | CIS type thin film solar cell manufacturing method | |
| US20050006221A1 (en) | Method for forming light-absorbing layer | |
| CN106549082B (en) | The method that alloys target and sulfide target cosputtering prepare copper-zinc-tin-sulfur film absorbed layer | |
| CN105336800A (en) | Preparation method of light absorption layer of CIGS-base thin film solar cell | |
| CN101752451A (en) | Method for preparing absorption layer of thin film solar cell | |
| CN109728111B (en) | Method for preparing high-performance all-inorganic perovskite solar cell based on copper bromide | |
| CN105821384B (en) | The method that polynary target double target co-sputtering prepares copper-zinc-tin-sulfur film | |
| WO2014013042A1 (en) | Avoidance of glass bending in thermal processes | |
| JP6316877B2 (en) | Method for forming ACIGS thin film at low temperature and method for manufacturing solar cell using the same | |
| US9284639B2 (en) | Method for alkali doping of thin film photovoltaic materials | |
| CN105826424B (en) | A kind of preparation method of copper-zinc-tin-sulfur film | |
| CN106449812B (en) | Method for preparing copper-tin-sulfur thin film battery by sputtering tin target and copper sulfide target | |
| KR102042656B1 (en) | A solar cell comprising czts thin film with uniform composition and a method of manufacturing the same | |
| WO2023109712A1 (en) | Wide bandgap copper-gallium-selenium light absorption layer and preparation method therefor, and solar cell | |
| US8785235B2 (en) | Apparatus and method for producing solar cells | |
| CN110571155B (en) | Preparation method of light absorption layer of thin-film solar cell | |
| TW201421725A (en) | Indium sputtering method and materials for chalcopyrite-based material usable as solar cell absorber layers | |
| US20170062634A1 (en) | Method to Condition an Annealing Tool for High Quality CuZnSnS(Se) Films to Achieve High Performance Solar Cells Reliably | |
| CN109904256A (en) | A kind of copper-zinc-tin-sulfur film preparation method | |
| CN108172660B (en) | CZTS method for manufacturing solar battery | |
| CN110957393B (en) | Preparation method of light absorption layer of thin-film solar cell | |
| CN110565060A (en) | Preparation method of light absorption layer of thin-film solar cell | |
| CN105428212A (en) | Method for preparing copper-zinc-tin-selenide thin film absorber layer by single target sputtering | |
| TWI634669B (en) | Method for making a large area of thin film solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180828 Termination date: 20210924 |