CN105428212A - Method for preparing copper-zinc-tin-selenide thin film absorber layer by single target sputtering - Google Patents
Method for preparing copper-zinc-tin-selenide thin film absorber layer by single target sputtering Download PDFInfo
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- CN105428212A CN105428212A CN201510766040.1A CN201510766040A CN105428212A CN 105428212 A CN105428212 A CN 105428212A CN 201510766040 A CN201510766040 A CN 201510766040A CN 105428212 A CN105428212 A CN 105428212A
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 22
- PCRGAMCZHDYVOL-UHFFFAOYSA-N copper selanylidenetin zinc Chemical compound [Cu].[Zn].[Sn]=[Se] PCRGAMCZHDYVOL-UHFFFAOYSA-N 0.000 title claims abstract description 7
- 239000010409 thin film Substances 0.000 title abstract description 7
- 239000006096 absorbing agent Substances 0.000 title abstract 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 20
- 150000001875 compounds Chemical class 0.000 claims abstract description 18
- 238000002360 preparation method Methods 0.000 claims abstract description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 10
- 239000008367 deionised water Substances 0.000 claims abstract description 8
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910008772 Sn—Se Inorganic materials 0.000 claims abstract description 7
- 229910052786 argon Inorganic materials 0.000 claims abstract description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 7
- 239000011733 molybdenum Substances 0.000 claims abstract description 7
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 claims abstract description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000001816 cooling Methods 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims abstract description 3
- 239000005361 soda-lime glass Substances 0.000 claims description 12
- 238000010792 warming Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 239000002893 slag Substances 0.000 claims description 8
- 239000011669 selenium Substances 0.000 claims description 6
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 229910052711 selenium Inorganic materials 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 42
- 238000004140 cleaning Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 3
- 238000005406 washing Methods 0.000 abstract 2
- 238000007664 blowing Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 238000002791 soaking Methods 0.000 abstract 1
- 239000013077 target material Substances 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 8
- 238000000137 annealing Methods 0.000 description 5
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 239000011135 tin Substances 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The present invention discloses a method for preparing a copper-zinc-tin-selenide thin film absorber layer. The method comprises a step of carrying out ultrasonic washing of a substrate by using cleaning powder, acetone, alcohol and deionized water orderly, soaking the substrate by using a bichrome; potassium bichromate solution, then washing the substrate by using deionized water again, and blowing the substrate with nitrogen to be dry for standby, a step of placing the substrate into a magnetron sputtering system to deposit a 1 micron molybdenum back electrode film, a step of carrying out RF single target sputtering with a Cu-Zn-Sn-Se quaternary compound as a target material, and depositing a 700nm to 1000nm copper-zinc-tin-selenide thin film prefabricated layer, a step of carrying out selenylation processing on the prefabricated layer prepared in the above condition under nitrogen or argon protection, and carrying out natural cooling to obtain the copper-zinc-tin-selenide thin film absorber layer. Compared with the traditional multiple-target multi-step sputtering or multiple-target co-sputtering, the method has the advantages that the method is simple and easy to operate, components are controllable, the time needed by film preparation is short, the production process is environment-friendly and has no pollution, and the method can be used in the preparation of a large scale copper-zinc-tin-selenide thin film absorber layer material.
Description
Technical field
The present invention relates to a kind of method of multi-element compounds list target Slag coating copper-zinc-tin-selefilm film absorbed layer, for the preparation of absorption layer of thin film solar cell, belong to photoelectric material technical field of new energies.
Background technology
Although Copper Indium Gallium Selenide (CIGS) and cadmium telluride (CdTe) solar cell remain the mainstay material of compound semiconductor film battery obsorbing layer, but because of its component indium in CIGS and gallium few at occurring in nature content, belong to rare element, and it is expensive, and because its Cd is heavy metal element in CdTe, serious threat can be caused to environment.Therefore, based on I
2-II-IV-VI
4quaternary compound semiconductor: Cu
2znSnS
4(CZTS), Cu
2znSnSe
4, and Cu (CZTSe)
2znSn (S
1-xse
x)
4, because its component is abundant and nontoxic at occurring in nature, TW level can be met and produce, and its price is relatively low.Moreover it belongs to direct band gap p-type semiconductor, there is high absorption coefficient (> 10
4cm
-1), band gap is by control S/(S+Se) ratio 0 ~ 1 regulate and make it between 1.0eV ~ 1.5eV.And its theoretical efficiency of its solar cell can reach 32.2%, be that one has alternative CdTe and Cu(In, Ga) Se
2(CIGS) novel thin film solar cell material.These two kinds of technology paths of selenizing after the method preparing copper-zinc-tin-selefilm film of current bibliographical information mainly comprises coevaporation and first prepares initialization layer.Wherein the film quality prepared of coevaporation is higher, but the maximum development bottleneck of this technology is that uniformity of film prepared by large area coevaporation is poor, is difficult to obtain practical application.After initialization layer, selenizing first adopts the method such as magnetron sputtering, electro-deposition to prepare copper, zinc, tin ternary alloy three-partalloy initialization layer, and then initialization layer is heat-treated (selenizing), obtain copper-zinc-tin-selefilm film, this method is easy to realize the large area preparation of film, but there is the problems such as initialization layer Composition Control difficulty, complex process, long flow path and reappearance be bad.Consider based on this, researcher in this field wishes by Simplified flowsheet difficulty, reduces preparation cost, improves the copper-zinc-tin-selefilm film that technique reappearance prepares high-quality.
Summary of the invention
Because the above-mentioned defect of prior art, a kind of method preparing copper-zinc-tin-selefilm film absorbed layer that technical problem to be solved by this invention is to provide simple process, composition is controlled, technological process is short and reproducibility is good.
The method of a kind of multi-element compounds list target Slag coating copper-zinc-tin-selefilm film absorbed layer involved in the present invention is implemented according to the following steps:
(1) substrate cleaning: by soda-lime glass successively with cleanser, acetone, alcohol, deionized water ultrasonic cleaning use deionized water ultrasonic cleaning again with after potassium bichromate solution immersion 30 ~ 60min, and dry up for subsequent use with nitrogen;
(2) cleaned soda-lime glass is put in magnetic control sputtering system and be warming up to 100 ~ 150 DEG C of baking 30 ~ 60min, on soda-lime glass, deposit the molybdenum back electrode film of 1 μm subsequently;
(3) preparation of copper-zinc-tin-selenium initialization layer film: utilize magnetic control sputtering system, adopts radiofrequency magnetron sputtering technology to carry out single target sputtering using Cu-Zn-Sn-Se quaternary compound as target, the copper-zinc-tin-selefilm film initialization layer of deposition 700 ~ 1000nm;
(4) preparation of copper-zinc-tin-selefilm film absorbed layer: the copper-zinc-tin-selefilm film initialization layer prepared by step (3) is warming up to the annealing in process that 530 ~ 570 DEG C are carried out 30 ~ 40min under nitrogen or argon, obtains copper-zinc-tin-selefilm film absorbed layer after cooling naturally.
The present invention adopts the substrate in a kind of method of multi-element compounds list target Slag coating copper-zinc-tin-selefilm film absorbed layer as described in step (1) need soak 30 ~ 90min at potassium bichromate solution;
The present invention adopt in a kind of method of multi-element compounds list target Slag coating copper-zinc-tin-selefilm film absorbed layer as described in step (2) as described in substrate put into and in magnetic control sputtering system, to be warming up to 100 ~ 150 DEG C of baking 30 ~ 60min;
The present invention adopts the atomic ratio of Cu, Zn, Sn and Se in the Cu-Zn-Sn-Se quaternary compound in a kind of method of multi-element compounds list target Slag coating copper-zinc-tin-selefilm film absorbed layer as described in step (3) to be 2.5:1.5:1:4;
The present invention adopts the copper-zinc-tin-selefilm film preformed layer thickness in a kind of method of multi-element compounds list target Slag coating copper-zinc-tin-selefilm film absorbed layer as described in step (3) to be 700 ~ 1000nm.
Accompanying drawing explanation
The XRD figure of the copper-zinc-tin-selefilm film absorbed layer of Fig. 1 prepared by embodiment 1;
The Raman figure of the copper-zinc-tin-selefilm film absorbed layer of Fig. 2 prepared by embodiment 1;
The SEM figure of the copper-zinc-tin-selefilm film absorbed layer of Fig. 3 prepared by embodiment 1;
The XRD figure of the copper-zinc-tin-selefilm film absorbed layer of Fig. 4 prepared by embodiment 2;
The Raman figure of the copper-zinc-tin-selefilm film absorbed layer of Fig. 5 prepared by embodiment 2;
The SEM figure of the copper-zinc-tin-selefilm film absorbed layer of Fig. 6 prepared by embodiment 2.
Embodiment
Embodiment 1
(1) substrate cleaning: soda-lime glass is soaked 60min with cleanser, acetone, alcohol, deionized water ultrasonic cleaning, potassium bichromate solution, and dries up with nitrogen for subsequent use successively;
(2) put into by cleaned soda-lime glass in magnetic control sputtering system and be warming up to 150 DEG C of baking 30min, carry out direct current sputtering using the molybdenum target being of a size of 76.2mm*3mm as target, base vacuum is 5.0*10
-4pa, underlayer temperature is 160 DEG C, and build-up of luminance air pressure is 1.6pa, and power is 150W, sputters 15min when argon gas is 1.6pa, regulates argon gas to be that 0.3pa sputters 105min subsequently, operates in molybdenum back electrode film soda-lime glass obtaining 1 μm by above-mentioned requirements;
(3) preparation of copper-zinc-tin-selefilm film initialization layer: carry out single target radio frequency sputtering as target using the Cu-Zn-Sn-Se target (atomic ratio of Cu, Zn, Sn and Se is for 2.5:1.5:1:4) being of a size of 76.2mm*3mm, base vacuum is 5.0*10-4pa, underlayer temperature is room temperature, build-up of luminance air pressure is 1.6pa, power is 80W, operating pressure is 0.3pa, and sedimentation time is 120min, the basis operating in step (2) obtains the copper-zinc-tin-selefilm film initialization layer of 860nm by above-mentioned requirements.
(4) preparation of copper-zinc-tin-selefilm film absorbed layer: the copper-zinc-tin-selefilm film initialization layer prepared by step (3) and 0.5 gram of selenium powder and 0.02 gram of glass putty are put into graphite boat; subsequently graphite boat is put into annealing furnace and be warming up to the annealing in process that 560 DEG C are carried out 20min under nitrogen protection, naturally cool to room temperature and sample taking-up is obtained copper-zinc-tin-selefilm film absorbed layer.
Embodiment 2
(1) substrate cleaning: soda-lime glass is soaked 60min with cleanser, acetone, alcohol, deionized water ultrasonic cleaning, potassium bichromate solution, and dries up with nitrogen for subsequent use successively;
(2) cleaned soda-lime glass is put in magnetic control sputtering system and be warming up to 150 DEG C of baking 30min, direct current sputtering is carried out as target using the molybdenum target being of a size of 76.2mm*3mm, base vacuum is 5.0*10-4pa, underlayer temperature is 160 DEG C, build-up of luminance air pressure is 1.6pa, and power is 150W, sputters 15min when argon gas is 1.6pa, regulate argon gas to be that 0.3pa sputters 105min subsequently, operate in molybdenum back electrode film soda-lime glass obtaining 1 μm by above-mentioned requirements;
(3) preparation of copper-zinc-tin-selefilm film initialization layer: carry out single target radio frequency sputtering as target using the Cu-Zn-Sn-Se target (atomic ratio of Cu, Zn, Sn and Se is for 2.5:1.5:1:4) being of a size of 76.2mm*3mm, base vacuum is 5.0*10-4pa, underlayer temperature is 400 DEG C, build-up of luminance air pressure is 1.6pa, power is 80W, operating pressure is 0.3pa, and sedimentation time is 90min, the basis operating in step (2) obtains the copper-zinc-tin-selefilm film initialization layer of 720nm by above-mentioned requirements.
(4) preparation of copper-zinc-tin-selefilm film absorbed layer: the copper-zinc-tin-selefilm film initialization layer prepared by step (3) and 0.5 gram of selenium powder and 0.02 gram of glass putty are put in graphite boat; subsequently graphite boat is put into annealing furnace and be warming up to the annealing selenization that 560 DEG C are carried out 20min under nitrogen protection, naturally cool to room temperature and sample taking-up is obtained copper-zinc-tin-selefilm film absorbed layer.
Claims (5)
1. a method for multi-element compounds list target Slag coating copper-zinc-tin-selefilm film absorbed layer, is characterized in that, comprise the following steps:
Substrate cleans: soda-lime glass is soaked 30 ~ 60min and uses deionized water ultrasonic cleaning again with cleanser, acetone, alcohol, deionized water ultrasonic cleaning, potassium bichromate solution, and dry up with nitrogen for subsequent use successively;
Cleaned soda-lime glass is put in magnetic control sputtering system and be warming up to 100 ~ 150 DEG C of baking 30 ~ 60min, on soda-lime glass, deposit the molybdenum back electrode film of 1 μm subsequently;
The preparation of copper-zinc-tin-selenium preformed layer: utilize magnetic control sputtering system, carries out the sputtering of radio frequency list target using Cu-Zn-Sn-Se quaternary compound as target, the copper-zinc-tin-selefilm film preformed layer of deposition 700 ~ 1000nm;
The preparation of copper-zinc-tin-selefilm film absorbed layer: vulcanizing treatment of being annealed under nitrogen or argon by the copper-zinc-tin-selefilm film preformed layer prepared by step 3, obtains copper-zinc-tin-selefilm film absorbed layer after cooling naturally.
2. the preparation method of a kind of multi-element compounds list target sputtering copper-zinc-tin-selefilm film absorbed layer as claimed in claim 1, is characterized in that described substrate need soak 30 ~ 90min at potassium bichromate solution.
3. the preparation method of a kind of multi-element compounds list target sputtering copper-zinc-tin-selefilm film absorbed layer as claimed in claim 1, described substrate is put in magnetic control sputtering system and is warming up to 100 ~ 150 DEG C of baking 30 ~ 60min.
4. the preparation method of a kind of multi-element compounds list target sputtering copper-zinc-tin-selefilm film absorbed layer as claimed in claim 1, is characterized in that the atomic ratio of Cu, Zn, Sn and Se in described Cu-Zn-Sn-Se compound is 2.5:1.5:1:4.
5. the preparation method of a kind of multi-element compounds list target sputtering copper-zinc-tin-selefilm film absorbed layer as claimed in claim 1, is characterized in that described copper-zinc-tin-selefilm film preformed layer thickness is 700 ~ 1000nm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109904256A (en) * | 2019-01-09 | 2019-06-18 | 云南师范大学 | A kind of copper-zinc-tin-sulfur film preparation method |
| CN114122169A (en) * | 2021-11-10 | 2022-03-01 | 云南师范大学 | Method for preparing copper-zinc-tin-selenium absorption layer film by selenide target sputtering and application |
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| CN104795455A (en) * | 2014-01-21 | 2015-07-22 | 东莞日阵薄膜光伏技术有限公司 | CZTS film solar cell with transparent graphene conductive film |
| CN104911567A (en) * | 2015-04-24 | 2015-09-16 | 中国地质大学（武汉） | Method for preparing p-type cuprous oxide thin film material through sol-gel technology |
| CN104962962A (en) * | 2015-06-16 | 2015-10-07 | 中物院成都科学技术发展中心 | Method for electrochemical codeposition of CZTS (Se) films in deep eutectic solution |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109904256A (en) * | 2019-01-09 | 2019-06-18 | 云南师范大学 | A kind of copper-zinc-tin-sulfur film preparation method |
| CN114122169A (en) * | 2021-11-10 | 2022-03-01 | 云南师范大学 | Method for preparing copper-zinc-tin-selenium absorption layer film by selenide target sputtering and application |
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