CN105819490B - Method for preparing different-morphology and self-assembly Cu2S nanometer materials - Google Patents

Method for preparing different-morphology and self-assembly Cu2S nanometer materials Download PDF

Info

Publication number
CN105819490B
CN105819490B CN201610163670.4A CN201610163670A CN105819490B CN 105819490 B CN105819490 B CN 105819490B CN 201610163670 A CN201610163670 A CN 201610163670A CN 105819490 B CN105819490 B CN 105819490B
Authority
CN
China
Prior art keywords
different
self assembly
cu2s
nano materials
preparation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201610163670.4A
Other languages
Chinese (zh)
Other versions
CN105819490A (en
Inventor
段军飞
陈召勇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changsha University of Science and Technology
Original Assignee
Changsha University of Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Changsha University of Science and Technology filed Critical Changsha University of Science and Technology
Priority to CN201610163670.4A priority Critical patent/CN105819490B/en
Publication of CN105819490A publication Critical patent/CN105819490A/en
Application granted granted Critical
Publication of CN105819490B publication Critical patent/CN105819490B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G3/00Compounds of copper
    • C01G3/12Sulfides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/70Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/01Particle morphology depicted by an image
    • C01P2004/04Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/10Particle morphology extending in one dimension, e.g. needle-like
    • C01P2004/16Nanowires or nanorods, i.e. solid nanofibres with two nearly equal dimensions between 1-100 nanometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/20Particle morphology extending in two dimensions, e.g. plate-like
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/64Nanometer sized, i.e. from 1-100 nanometer

Abstract

The invention discloses a method for preparing different-morphology and self-assembly Cu2S nanometer materials, and belongs to the field of semiconductor nanometer material preparing.The method includes the following steps that 1, biphenyl mercaptan, an acid-binding agent and an organic solvent are mixed to be even, cuprous chloride is added under the protection of nitrogen, and the mixture is reacted for 2 h to 6 h at the temperature of 10 DEG C to 30 DEG C; 2, a Cu2S precursor is prepared; 3, the different-morphology and self-assembly Cu2S nanometer materials are prepared.According to the preparing method, the synthesis technology is controlled, the Cu2S precursor which is of a highly-ordered layered structure is synthesized, then the difference of the dissociation degree of the layered structure of the precursor under different conditions is adopted, and therefore the different-morphology and self-assembly Cu2S nanometer materials are prepared.Compared with an existing preparing technology of Cu2S nanometer materials, by means of the preparing method, the morphology of the product can be better controlled, and the obtained product is good in dispersibility, and has the good application prospects in the solar energy field, the lithium ion battery field, the photocatalysis field and the like.

Description

A kind of different-shape self assembly Cu2The preparation method of S nano materials
Technical field
The invention belongs to the preparation field of sulfide compound semiconductor nano material, and in particular to a kind of different-shape is from group Dress Cu2The preparation method of S nano materials.
Background technology
Cuprous sulfide (Cu2S) be common indirect band gap P-type semiconductor in one kind, its energy gap be 1.2eV, Exist in a large number in the form of vitreous copper in nature.Cu2S it is nanocrystalline due to its quantum size effect show uniqueness physics and Chemical property, has a wide range of applications in fields such as energy storage, photoelectric device, plasma resonances.Development is easy, can Control, pervasive, eco-friendly Syntheses method are prepared with realizing the nano material with specific composition, size, pattern, and Further function nano crystalline substance assembly is assembled into build nano-device by controllable, it is extensive for developing nano material Using having great importance.
Investigation of materials personnel both domestic and external are in Cu2Substantial amounts of research is carried out simultaneously in S nanocrystalline controllable standby and assembling Some impressive progresses are achieved, such as Donghua University Hu Junqing seminars have synthesized list in water phase by strict control reaction condition Dispersion Cu2S is nanocrystalline, subsequently the method by removing some ligands stabilizer, successfully assembles high length-diameter ratio one-dimensional and two Dimension structure.Fujian Wu Gousuochen tinkling of pieces of jade seminar of the Chinese Academy of Sciences is prepared for Cu by thermally decomposing alkyl sulfide alkoxide2S nanometer plates and its assembling Body.However, research employing at present is mostly solution system, preparation process is cumbersome, and the response time is long, different in same system It is little that pattern is particularly the controlled standby research report of the monodimension nanometer materials such as nanometer rods, nano wire.Therefore, in order to preferably control The structure and microscopic appearance of product processed, explores a kind of universality, environmental friendliness, more controlled many pattern self assembly Cu2S nanometers Crystal preparation method becomes the problem of urgent need to resolve.
The content of the invention
It is an object of the invention to overcome Cu in the presence of prior art2On S nanomaterial assembly bodily form looks are uncontrollable State deficiency, there is provided a kind of different-shape self assembly Cu2The preparation method of S nano materials, the preparation method adopts routine techniquess handss Duan Zuhe, it is with low cost with simple to operate, it is easy to accomplish the characteristics of, promote to realize by the collaboration between processing step Different-shape self assembly Cu2S nano materials prepare purpose, prepared Cu2S Nanoscale assemblies have excellent dispersibility and can The pattern of control, has a good application prospect in fields such as solar energy, lithium ion battery and photocatalysis.
In order to realize foregoing invention purpose, the invention provides technical scheme below:
A kind of different-shape self assembly Cu2The preparation method of S nano materials, comprises the following steps:
(1) by biphenyl mercaptan, acid binding agent and organic solvent mix homogeneously, Cu-lyt. is added under nitrogen protection, in 10 ~30 DEG C of 2~6h of reaction;
(2) reacting liquid filtering for preparing step (1), gained filter cake absolute ethanol washing subsequently does filter cake vacuum It is dry to obtain Cu2S presomas;
(3) Cu for preparing step (2)2S presomas are calcined under vacuum or atmosphere of inert gases, when being in During vacuum, calcining heat is 200~240 DEG C;When in atmosphere of inert gases, calcining heat is 200~220 DEG C, is obtained To different-shape self assembly Cu2S nano materials.
Above-mentioned preparation method synthesizes first the Cu in high ordered lamellar structure by controlling synthesis technique2S presomas, Then presoma is utilized in the diversity of different experimental conditions Layered structure dissociation degree, so as to prepare different-shape from group Dress Cu2S nano materials.The Cu in above-mentioned steps (3) calcination process2The high ordered lamellar structure of S presomas slowly dissociates, and C-S keys break Schizogenesis is into Cu2S.Detailed process is:Under vacuum during 200~220 DEG C of calcinings, reaction rate is relatively slow, predecessor stratiform Structure is easily controllable, thus the Cu for being formed2S is nanocrystalline to be only capable of free diffusing growth, the nanocrystalline succession precursor of generation in layer The order of stratiform, is self-assembled into Cu2S nano wire assemblies.When being warming up to 240 DEG C, reaction rate is accelerated, presoma stratiform Mesomorphic phase structure becomes to be difficult controlled, and local layer structure may collapse, thus Cu2S is nanocrystalline raw in partial layer inner structure While long, interlayer also has slow diffusion, and the iris action due to being limited to long alkyl layer, this speed of growth compares layer It is interior more slowly, so as to result in Cu2The generation of S nanometer sheet;Under atmosphere of inert gases, Cu when 200 DEG C of calcinings2S nano wire groups The formation mechenism of dress body is identical with 200~220 DEG C of calcinings under vacuum, but in liter high-temperature, its reaction rate is compared very Empty atmosphere faster when such as rising to 220 DEG C of higher temperature, can generate Cu at the same temperature2S nanometer plate assemblies.This explanation Presoma stratiform mesomorphic phase structure compares that the lower 240 DEG C of calcinings of vacuum are more uncontrolled, and now stratiform mesomorphic phase structure is further Collapse, while the arrangement of interlayer direction alkyl chain also more " loose ", eventually forms nanometer plate assembly.
Preferably, biphenyl mercaptan is represented with formula (1) in above-mentioned steps (1):
Interval base is hexyloxy in said structure, and tail chain is butoxy, hexyloxy, octyloxy, decyloxy or dodecane oxygen Base (n=4,6,8,10,12).When reaction system uses biphenyl mercaptan as sulphur source, due to biphenyl mercaptan biphenyl structural compared with The chain hydrocarbon structure of aliphatic mercaptan has bigger stiffness, and the high ordered lamellar structure that it is generated is difficult in calcining Subside such that it is able to prepare the cuprous sulfide nano material of self assembly.
Preferably, acid binding agent is one or more in three second ammoniums, ammonium acetate and pyridine in above-mentioned steps (1), using tiing up Sour agent is conducive to the H generated during quick absorbing reaction2S gases, while environmental pollution is reduced Cu is promoted2S presomas Formed.
Preferably, the mol ratio of biphenyl mercaptan and Cu-lyt. is 1: 1~1.2: 1 in above-mentioned steps (1).Proportioning raw materials exist Can guarantee that synthetic reaction is fully carried out in the molar ratio range, while and avoiding unnecessary side reaction from occurring.
Preferably, organic solvent is one or more in toluene, tetrahydrofuran and dichloromethane in above-mentioned steps (1), Above-mentioned organic solvent can make copper ion solvation, meanwhile, also due to the organic solvent is difficult to provide proton in itself, with very strong Solvability.Most preferably, from toluene as solvent.
Preferably, use relative to 1~3 times of body of reactant liquor during absolute ethanol washing filter cake in above-mentioned steps (2) Long-pending dehydrated alcohol is washed.In Cu2In the preparation process of S presomas, easy remained unreacted is completely former in reactant liquor Material, additive and solvent, these impurity can have a negative impact to follow-up calcine technology.Using in above-mentioned volume range Dehydrated alcohol is washed to filter cake, can fully remove residual impurity, improves the Cu for preparing2The purity of S nano materials.
Preferably, the baking temperature of filter cake is 80~100 DEG C in above-mentioned steps (2), and drying time is 4~6h.
Preferably, noble gases are helium, neon or argon in above-mentioned steps (3).
Preferably, calcination time is 1~3h in above-mentioned steps (3).When calcination time is less than 1h, due to the response time too Short, reaction not enough completely, causes Cu2S nano materials are mainly in granular form, it is impossible to form self-assembled structures.Calcination time is more than During 3h, because the response time is long, the nanostructured of generation is further heated and causes recrystallization so that original structure quilt Destruction.
Compared with prior art, beneficial effects of the present invention:
1. the present invention is from simple, easily controlled synthesis Cu2S is nanocrystalline to set out, with the Cu in high ordered lamellar structure for preparing2S Presoma is raw material, by simple solvent-free method for pyrolysis, using dissociation degree of the presoma under different pyrolytical conditions, and can Different-shape self assembly Cu is prepared in control2S nano materials.
2. the Cu that the present invention is prepared2S nano materials, product dispersibility is very good, morphology controllable.By simple Solwution method obtains Cu2S presomas, subsequently just can prepare different-shape self assembly Cu by the regulation and control of pyrolytical condition2S nanometer materials Material, cycle is short, it is easy to amplificationization is suitable to industrialization.
3. the different-shape self assembly Cu that prepared by the present invention2S nano materials, in solar energy, lithium ion battery and photocatalysis Have a good application prospect Deng field.
Description of the drawings
Fig. 1 is different-shape self assembly Cu of the present invention2S nano materials prepare schematic diagram.
Fig. 2 is Cu prepared by the embodiment of the present invention 12The SAXS figures of S presomas.
Fig. 3 is self assembly Cu prepared by the embodiment of the present invention 12The XRD figure of S nano wires.
Fig. 4 is self assembly Cu prepared by the embodiment of the present invention 12The TEM figures of S nano wires.
Fig. 5 is self assembly Cu prepared by the embodiment of the present invention 22The TEM figures of S nanometer sheet.
Fig. 6 is self assembly Cu prepared by the embodiment of the present invention 32The TEM figures of S nanometer plates.
Fig. 7 is Cu prepared by comparative example of the present invention 12The TEM figures of S nanometer plates.
Fig. 8 is Cu prepared by comparative example of the present invention 22The TEM figures of S nanometer plates
Specific embodiment
With reference to test example and specific embodiment, the present invention is described in further detail.But this should not be understood Scope for above-mentioned theme of the invention is only limitted to below example, and all technologies realized based on present invention belong to this The scope of invention.
Embodiment 1
As shown in Figure 1 technique prepares self assembly Cu2S nano wires, by 20mmol 4- hexyloxy -4 '-(10- sulfydryl last of the ten Heavenly stems oxygen Base) biphenyl and the second ammoniums of 20mmol tri- added in 60ml toluene, stirs 20min, and being allowed to be uniformly dispersed add after nitrogen protection is lower 20mmolCuCl, at 20 DEG C 6h is reacted.Room temperature is cooled to after the completion of reaction, crude product is filtered to obtain, crude product is clear with dehydrated alcohol Wash, the sample for obtaining is vacuum dried into 6h at 80 DEG C, obtain yellow Cu2S presomas.The aforementioned Cu of precise 0.5g2S presomas, so Afterwards 1h is calcined under 200 DEG C of vacuums, finally give black self assembly Cu2S nano wires.
The Cu that will be prepared2S presomas and self assembly Cu2S nano wires carry out X-ray small angle and Wide angle X-ray diffraction analytical table Levy, as a result distinguish as shown in Figure 2,3.Self assembly Cu2S nano wires carry out transmission electron microscope (TEM) sign, as a result such as Fig. 4 It is shown.
Embodiment 2
As shown in Figure 1 technique prepares self assembly Cu2S nanometer sheet, by 20mmol 4- hexyloxy -4 '-(10- sulfydryl last of the ten Heavenly stems oxygen Base) biphenyl and the second ammoniums of 20mmol tri- added in 60ml toluene, stirs 20min, and being allowed to be uniformly dispersed add after nitrogen protection is lower 20mmolCuCl, at 20 DEG C 6h is reacted.Room temperature is cooled to after the completion of reaction, crude product is filtered to obtain, crude product is clear with dehydrated alcohol Wash, the sample for obtaining is vacuum dried into 6h at 80 DEG C, obtain yellow Cu2S presomas.The aforementioned Cu of precise 0.5g2S presomas, so Afterwards 1h is calcined under 240 DEG C of vacuums, finally give black self assembly Cu2S nanometer sheet.
The Cu that will be prepared2S nanometer sheet carries out transmission electron microscope (TEM) sign, as a result as shown in Figure 5.
Embodiment 3
As shown in Figure 1 technique prepares self assembly Cu2S nanometer plates, by 20mmol 4- hexyloxy -4 '-(10- sulfydryl last of the ten Heavenly stems oxygen Base) biphenyl and the second ammoniums of 20mmol tri- added in 60ml toluene, stirs 20min, and being allowed to be uniformly dispersed add after nitrogen protection is lower 20mmolCuCl, at 20 DEG C 6h is reacted.Room temperature is cooled to after the completion of reaction, crude product is filtered to obtain, crude product ethanol purge will The sample for obtaining is vacuum dried 6h at 80 DEG C, obtains yellow Cu2S presomas.The aforementioned Cu of precise 0.5g2S presomas, Ran Hou 1h is calcined under 220 DEG C of argon atmospheres, black self assembly Cu is finally given2S nanometer plates.
The Cu that will be prepared2S nanometer plates carry out transmission electron microscope (TEM) sign, as a result as shown in Figure 6.
Embodiment 4
As shown in Figure 1 technique prepares self assembly Cu2S nano wires, by 20mmol 4- hexyloxy -4 '-(10- sulfydryl fourth oxygen Base) biphenyl and the second ammoniums of 20mmol tri- added in 60ml toluene, stirs 20min, and being allowed to be uniformly dispersed add after nitrogen protection is lower 20mmolCuCl, at 20 DEG C 6h is reacted.Room temperature is cooled to after the completion of reaction, crude product is filtered to obtain, crude product is clear with dehydrated alcohol Wash, the sample for obtaining is vacuum dried into 6h at 80 DEG C, obtain yellow Cu2S presoma.The aforementioned Cu2S presomas of precise 0.5g, Then 1h is calcined under 200 DEG C of vacuums, finally gives black self assembly Cu2S nano wires.
Embodiment 5
As shown in Figure 1 technique prepares self assembly Cu2S nanometer sheet, by 20mmol 4- hexyloxy -4 '-(10- sulfydryl dodecanes Base) biphenyl and the second ammoniums of 20mmol tri- added in 60ml toluene, stirs 20min, and being allowed to be uniformly dispersed add after nitrogen protection is lower 20mmolCuCl, at 20 DEG C 6h is reacted.Room temperature is cooled to after the completion of reaction, crude product is filtered to obtain, crude product is clear with dehydrated alcohol Wash, the sample for obtaining is vacuum dried into 6h at 80 DEG C, obtain yellow Cu2S presomas.The aforementioned Cu of precise 0.5g2S presomas, so Afterwards 1h is calcined under 240 DEG C of vacuums, finally give black self assembly Cu2S nanometer sheet.
Comparative example 1
20mmol 4- hexyloxy -4 '-(10- sulfydryl decyloxies) biphenyl and the second ammoniums of 20mmol tri- are added in 60ml toluene, Stirring 20min, is allowed to be uniformly dispersed after the lower addition 20mmolCuCl of nitrogen protection, and at 20 DEG C 6h is reacted.It is cold after the completion of reaction But to room temperature, crude product is filtered to obtain, the sample for obtaining is vacuum dried 6h, obtains yellow by crude product ethanol purge at 80 DEG C Cu2S presomas.The aforementioned Cu of precise 0.5g2S presomas, then calcine 1h under 240 DEG C of argon atmospheres, obtain size point The uneven Cu of cloth2S nanometer plates.
The Cu that will be prepared2S nanometer plates carry out transmission electron microscope (TEM) sign, as a result as shown in Figure 7.
Comparative example 2
20mmol lauryl mercaptans and the second ammoniums of 22mmol tri- are added in 60ml toluene, 20min is stirred, dispersion is allowed to equal It is even to add 20mmolCuCl under nitrogen protection, react 6h at 20 DEG C.Room temperature is cooled to after the completion of reaction, filters slightly to produce The sample for obtaining is vacuum dried 6h by thing, crude product ethanol purge at 100 DEG C, obtains white Cu2S presomas.Precise The 0.5g Cu2S presomas, under 200 DEG C of vacuums 1h is calcined, and obtains the uneven Cu of distribution of sizes2S nano-particle.
The Cu that will be prepared2S nano-particle carries out transmission electron microscope (TEM) sign, as a result as shown in Figure 8.

Claims (7)

1. a kind of different-shape self assembly Cu2The preparation method of S nano materials, it is characterised in that comprise the following steps:
(1) by biphenyl mercaptan, acid binding agent and toluene mix homogeneously, Cu-lyt., the biphenyl mercaptan are added under nitrogen protection It is 1 with the mol ratio of Cu-lyt.:1~1.2:1, react 2~6h in 10~30 DEG C;
(2) reacting liquid filtering for preparing step (1), gained filter cake absolute ethanol washing is subsequently vacuum dried filter cake To Cu2S presomas;
(3) Cu for preparing step (2)2S presomas are calcined under vacuum or atmosphere of inert gases, when in vacuum During atmosphere, calcining heat is 200~240 DEG C;When in atmosphere of inert gases, calcining heat is 200~220 DEG C, is obtained not With pattern self assembly Cu2S nano materials.
2. a kind of different-shape self assembly Cu according to claim 12The preparation method of S nano materials, it is characterised in that Biphenyl mercaptan described in the step (1) is represented with formula (1):
3. a kind of different-shape self assembly Cu according to claim 12The preparation method of S nano materials, it is characterised in that Acid binding agent described in the step (1) is one or more in triethylamine, ammonium acetate and pyridine.
4. a kind of different-shape self assembly Cu according to claim 12The preparation method of S nano materials, it is characterised in that Using the dehydrated alcohol relative to 1~3 times of volume of reactant liquor during absolute ethanol washing filter cake described in the step (2) Washed.
5. a kind of different-shape self assembly Cu according to claim 12The preparation method of S nano materials, it is characterised in that The baking temperature of filter cake described in the step (2) is 80~100 DEG C, and drying time is 4~6h.
6. a kind of different-shape self assembly Cu according to claim 12The preparation method of S nano materials, it is characterised in that Noble gases described in the step (3) are helium, neon or argon.
7. a kind of different-shape self assembly Cu according to claim 12The preparation method of S nano materials, it is characterised in that Calcination time is 1~3h in the step (3).
CN201610163670.4A 2016-03-22 2016-03-22 Method for preparing different-morphology and self-assembly Cu2S nanometer materials Expired - Fee Related CN105819490B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610163670.4A CN105819490B (en) 2016-03-22 2016-03-22 Method for preparing different-morphology and self-assembly Cu2S nanometer materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610163670.4A CN105819490B (en) 2016-03-22 2016-03-22 Method for preparing different-morphology and self-assembly Cu2S nanometer materials

Publications (2)

Publication Number Publication Date
CN105819490A CN105819490A (en) 2016-08-03
CN105819490B true CN105819490B (en) 2017-04-26

Family

ID=56523908

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610163670.4A Expired - Fee Related CN105819490B (en) 2016-03-22 2016-03-22 Method for preparing different-morphology and self-assembly Cu2S nanometer materials

Country Status (1)

Country Link
CN (1) CN105819490B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108383149B (en) * 2018-05-10 2019-10-29 南京晓庄学院 Cu2The nanocrystalline controllable synthesis method of S
CN108950585B (en) * 2018-08-03 2020-04-17 武汉工程大学 MoS2@ Cu2S @ foam copper composite nano material and preparation method and application thereof
CN114437708B (en) * 2020-11-05 2023-10-24 中国科学院化学研究所 Temperature-sensitive quasi-cuprous sulfide light-emitting two-dimensional semiconductor and preparation method and application thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101544395A (en) * 2009-04-30 2009-09-30 天津科技大学 Method for thermally synthesizing cuprous sulfide nanometer flower-like alcohol
CN101780973A (en) * 2010-03-10 2010-07-21 中国科学院半导体研究所 Method for preparing monodispersed cuprous sulfide semiconductor nanocrystalline
CN102126743B (en) * 2011-04-12 2012-07-04 东华大学 Method for carrying out liquid-phase synthesis on Cu2S octahedral nanocrystal under high temperature

Also Published As

Publication number Publication date
CN105819490A (en) 2016-08-03

Similar Documents

Publication Publication Date Title
CN101774570B (en) Method for preparing graphite alkyne film and application
CN109956463A (en) A kind of carbon nanotube and preparation method thereof
CN105819490B (en) Method for preparing different-morphology and self-assembly Cu2S nanometer materials
CN103332726B (en) The hydrothermal synthesis method of tin dioxide nanometer material
AU2020101474A4 (en) A Method for Preparing Nano α-Fe2O3 from Solid Waste Containing Iron under Solvent-free
CN102580716A (en) Method for synthesizing zinc oxide/graphene composite by solvothermal method
CN109264787B (en) ZnFe2O4Preparation method of cubic block structure and obtained product
CN108483502A (en) A kind of preparation method and application of rhenium disulfide nanometer sheet
CN106601492A (en) Ultra-thin Zn-Ni-Co ternary metal oxide nanosheet with wrinkles and preparation method of ultra-thin Zn-Ni-Co ternary metal oxide nanosheet
CN104043471A (en) Preparation method of graphene/Ta3N5 composite photo-catalyst
Dou et al. F127-assisted hydrothermal preparation of BiOI with enhanced sunlight-driven photocatalytic activity originated from the effective separation of photo-induced carriers
CN104477857A (en) Two-dimensional ultrathin ferric diselenide nano material as well as preparation method and application thereof
CN105126803A (en) Preparation method of strontium titanate/graphene composite nanometer catalyst
CN107670676A (en) The preparation method and applications of the cadmium sulfide molybdenum sulfide tungsten sulfide heterojunction photocatalysis composite of one species sea urchin shape structure
CN113562775A (en) Preparation method of zinc oxide/cobaltosic oxide hollow cubic nano material
CN102557107A (en) Method for preparing flower-shaped copper sulfide (CuS) nanocrystal
CN103482689A (en) Method for preparing nano lead stannate powder by microwave hydrothermal/solvothermal process
CN113755878B (en) Preparation method and application of bismuth-based catalyst
CN109133158B (en) Locally oxidized SnS2Method for preparing thin slice and its product and use
CN112266485B (en) Universal two-dimensional rare earth MOFs material, solvent-free chemical stripping method and application thereof
Deng et al. Fabrication of In-rich AgInS2 nanoplates and nanotubes by a facile low-temperature co-precipitation strategy and their excellent visible-light photocatalytic mineralization performance
Vattikuti et al. Fabrication of CdS quantum dot/Bi 2 S 3 nanocomposite photocatalysts for enhanced H 2 production under simulated solar light
CN109622057B (en) Method for preparing carbon-doped molybdenum sulfide/graphene oxide composite material
CN104399452A (en) Method for one-step microwave synthesis of La-Cr co-doped strontium titanate
CN116651489A (en) Magnetic modified three-dimensional flower-shaped N-Bi 2 O 2 CO 3 / g-C 3 N 4 Preparation method and application of photocatalytic material

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20170426

Termination date: 20190322

CF01 Termination of patent right due to non-payment of annual fee