CN105819393B - The method for improving metal loss in inertial sensor - Google Patents
The method for improving metal loss in inertial sensor Download PDFInfo
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- CN105819393B CN105819393B CN201510006098.6A CN201510006098A CN105819393B CN 105819393 B CN105819393 B CN 105819393B CN 201510006098 A CN201510006098 A CN 201510006098A CN 105819393 B CN105819393 B CN 105819393B
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Abstract
The present invention provides a kind of method for improving metal loss in inertial sensor, by before the bonding technology of MEMS, first one layer of organic thin film is prepared in device surface, using as the protective layer in follow-up silicon hole etching technics, protection metal level below is not by over etching, and, after silicon hole etching technics is completed, oxygen plasma body technology can be passed through to remove the organic thin film in the remaining sensitive zones opening positioned at device, so as to ensure that the integrity of metal level, reduce metal loss, the sensitivity of sensor being ultimately formed is not affected simultaneously again.
Description
Technical field
The present invention relates to field of manufacturing semiconductor devices, more particularly to a kind of side for improving metal loss in inertial sensor
Method.
Background technology
Microelectromechanical systems (MEMS) needs higher depth-width ratio, preferable vertical profile, preferable characteristic size control
System and the uniformity for etching, so as to meet the demand of device.
For these reasons, in some devices, the thick silicon layers of about 100nm are cut through recessed to the oxide of lower section by needs
Groove, and stop on the exposed surface of metal level below oxide groove.So, it usually needs crossing for generation 20% is carved
Erosion, so as to ensure cutting through for 100um silicon holes, and the plasma of the densification for being used to form these over etchings can be loaded onto oxidation
On interface between thing and metal level, so as to cause the loss of metal level.
For the loss of metal level, its would generally affect follow-up chemical vapor deposition method (CVD) and and tungsten deposition,
So as to affect conductivity.
Above-mentioned in order to solve the problems, such as, the method that current industry is typically adopted is, before MEMS bonding technologies, first in device
Surface covers one layer of thin oxide, usually SiO2So as to as the metal level in follow-up silicon hole etching technics (TSV)
Protective layer.But, as, after the through hole of follow-up formation sensing unit, the oxide for being covered in device sensing unit part can not
It is removed completely, so the sensitivity decrease of final device can be caused.
The content of the invention
In view of the above problems, the present invention provides a kind of method for improving metal loss in inertial sensor.
The technical proposal for solving the technical problem of the invention is：
A kind of method for improving metal loss in inertial sensor, wherein, including：
Step S1, the semiconductor structure for providing a pending MEMS sensor bonding technology, the semiconductor structure include
The metal level that oxide skin(coating) and the embedded oxide skin(coating) are arranged, is provided with contact area opening and sensing in the oxide skin(coating)
Region openings, and the contact area opening and the sensitive zones opening will be the part surface of the metal level of lower section sudden and violent
Dew；
Step S2, the semiconductor structure surface prepare one layer of organic thin film, to cover the exposed oxidation
Nitride layer and the exposed metal level；
Step S3, removal are covered in the organic thin film of the top surface of the oxide skin(coating)；
Step S4, organics removal thin film oxide skin(coating) top surface be bonded a silicon layer；
Step S5, formed in the silicon layer and the contact area open communication by photoetching process and etching technics
Through hole；
Step S6, by etching technics, form some through holes in positioned at the silicon layer of the sensitive zones overthe openings；
Step S7, removal are positioned at the remaining organic thin film in sensitive zones opening and contact area opening.
Described method, wherein, step S5 is specifically included：
Prepare the surface that photoresist covers the silicon layer；
Formed in the photoresist opening by exposing, being developed in, the opening is positioned at the upper of the contact area opening
Side；
The photoresist is performed etching as mask with the photoresist for being formed with opening, form the through hole.
Described method, wherein, the organic thin film is that amorphous c film, bottom anti-reflective thin film or photoresist are thin
Film.
Described method, wherein, the material of the oxide skin(coating) is silicon dioxide.
Described method, wherein, the thickness of the silicon layer is 25～100um.
Described method, wherein, in step S7, the remaining Organic substance is removed by oxygen plasma ashing technique
Thin film.
Described method, wherein, the thickness of the remaining organic thin film is less than 2um.
Described method, wherein, the material of the metal level is aluminum.
Described method, wherein, the oxide skin(coating) and the metal level are arranged at the top of a silicon substrate.
Described method, wherein, also include：
Filler metal in step S8, through hole in step s 5.
Described method, wherein, in step S8, using filler metal in electroplating technology through hole in step s 5.
Described method, wherein, in through hole in step s 5, the metal of filling is tungsten.
Above-mentioned technical proposal has the advantage that or beneficial effect：
The inventive method is covered in by before MEMS carries out bonding technology, first preparing one layer of organic thin film
The surface of MEMS, as the protective layer in follow-up silicon hole etching technics, to protect the metal level of lower section not by over etching,
Also, after silicon hole etching technics is completed, can be passed remaining positioned at device by oxygen plasma ashing technique
Organic thin film in sensillary area is removed, so as to both ensure that the integrity of metal level, while and not affecting the spirit of final sensor
Sensitivity.
Description of the drawings
With reference to appended accompanying drawing, more fully to describe embodiments of the invention.However, appended accompanying drawing be merely to illustrate and
Illustrate, and be not meant to limit the scope of the invention.
Fig. 1～Fig. 9 is the device architecture schematic diagram after each processing step is sequentially passed through in the inventive method.
Specific embodiment
The invention provides a kind of method for improving metal loss in inertial sensor, mainly can using organic thin film
Enough serve as the protective layer in silicon hole etching technics, be easy to this characteristic removed after the completion of silicon hole etching technics again, with
Improve the metal loss in sensor, while and not affecting the sensitivity of device.
The invention mainly includes steps：
Step S1, the semiconductor structure for providing a pending MEMS sensor bonding technology, semiconductor structure include oxidation
The metal level that nitride layer and embedded oxide skin(coating) are arranged, is provided with contact area opening and sensitive zones opening in oxide skin(coating), and
The part surface of the metal level of lower section is exposed by contact area opening and sensitive zones opening；
Step S2, one layer of organic thin film is prepared on the surface of MEMS sensor, to cover exposed oxide skin(coating) and sudden and violent
The metal level of dew；
Step S3, removal are covered in the organic thin film of the top surface of oxide skin(coating)；
Step S4, organics removal thin film oxide skin(coating) top surface be bonded a silicon layer；
Step S5, form through hole with contact area open communication by photoetching process and etching technics in a layer of silicon；
Step S6, by etching technics, form some through holes in positioned at the silicon layer of sensitive zones overthe openings；
Step S7, removal are positioned at remaining organic thin film in sensitive zones opening and contact area opening.
The inventive method is described in detail with reference to specific embodiments and the drawings.
First, there is provided the semiconductor structure of a pending MEMS sensor bonding technology, as shown in figure 1, the MEMS is sensed
A silicon substrate 1 is included in device, 1 is provided with oxide skin(coating) 2 and metal level 3 on the silicon substrate, and metal level 3 is embedded in the oxide
In layer 2, and sensitive zones opening 21 and contact area opening 22 are provided with the oxide skin(coating) 2, and pass through the sensitive zones
Opening 21 and contact area opening 22 expose the partial metal layers 3 of lower section.In the present embodiment, above-mentioned oxide skin(coating) 2
Material is SiO2, and the material of above-mentioned metal level 3 is aluminum, and those skilled in the art is it should be appreciated that above-mentioned oxide skin(coating) 2
Material is not limited to SiO2, the material of above-mentioned metal level 3 is not limited to aluminum.
Then, it is as shown in Fig. 2 preparing one layer of organic thin film 4 in above-mentioned semicon-ductor structure surface, above-mentioned so as to cover
The surface of oxide skin(coating) 2 and the surface of exposed metal level 3.In this step, the organic thin film 4 can be that amorphous carbon is thin
Film (A-C), or bottom anti-reflection layer (BARC), or photoresist (PR) etc..
Then, as shown in figure 3, part removes above-mentioned organic thin film 4 so that at the top of above-mentioned oxide skin(coating) 2
Organic thin film 4 is completely removed, the organic thin film 4 ' in above-mentioned sensitive zones opening 21 and contact area opening 22
It is retained certain thickness, the thickness was difficult thin, was advisable can at least resist follow-up 20% over etching, while which can not
Blocked up, no more than above-mentioned sensitive zones opening 21 and contact area opening 22 depth (generally 2um).
Subsequently, as shown in figure 4, carrying out MEMS sensor bonding technology to the semiconductor structure through above-mentioned steps, specifically
, the top key of oxide skin(coating) 2 in the devices unification silicon layer 5, the thickness of the silicon layer 5 be generally 25～100um (as 25um,
30um, 40um, 100um etc.), the thickness of the silicon layer 5 can be adjusted correspondingly according to specific process requirements.In the silicon layer
After 5 bondings, the contact area opening and sensitive zones opening below the silicon layer 5 is coordinated with the silicon layer, forms empty respectively
Cavity configuration.
Then, as shown in figure 5, preparing the upper surface that one layer of photoresist covers the silicon layer 5, and the photoresist is exposed
Light, developing process, so as to form opening positioned at the part of contact area overthe openings in the photoresist, and then form patterning
Photoresist 6.
As shown in fig. 6, the silicon layer of lower section is performed etching with the photoresist 6 for patterning as mask, so as to shape in a layer of silicon
Into through hole 51, the through hole 51 for being formed and the contact area open communication of lower section, due to being coated with contact area opening
Machine thing thin film, the Organic substance serve the effect of protection lower metal layer in the technique of via etch, and it is possible to pass through control
Parameter in etching technics processed be adjusted so that it is etched after be located at contact area in organic thin film by partially or completely
Remove, after the completion of etching, remove remaining photoresist.
Then, as shown in fig. 7, by etching technics, in above-mentioned silicon layer 5, forming some through holes 52, some through holes
52 position is located at the top of above-mentioned sensitive zones opening, so as to the chamber portion for forming sensitive zones opening and silicon layer
Open.
At this moment, the organic thin film in sensitive zones opening is come out again, by oxygen gas plasma ash
Chemical industry skill (O2Based process) can having the residual in the sensitive zones opening and in contact area opening
Machine thing thin film is removed, to form structure as shown in Figure 8, due to completely revealing lower section in sensitive zones opening 21
Metal level, it can be ensured that device has enough sensitivity.In this step, the tool of oxygen plasma ashing technique
Body parameter can be adjusted according to the thickness of remaining organic thin film in sensitive zones opening.
Finally, as shown in figure 9, filler metal in the through hole connected in contact area and with contact area, can typically adopt
The mode of plating enters the filling of row metal 7, it is preferred that tungsten may be selected as the metal of filling.
In sum, after above-mentioned steps processing, due to before silicon hole etching technics is carried out, above exposed metal
Covered with one layer of Organic substance such that it is able to the metal level in silicon hole etching technics below protection so as to not by mistake
Etching, therefore, the metal in contact area opening will not be lost in silicon hole etching technics, after not interfering with
The filling of continuous tungsten metal, and then ensure that conductivity；Further, since previously the organic thin film of deposition easily with oxygen etc. from
Daughter is reacted and is removed, so after silicon hole etching technics, very easily can open unnecessary positioned at induction region
Organic thin film in mouthful is removed, so as to ensure that device sensitivity.
For a person skilled in the art, after reading described above, various changes and modifications undoubtedly will be evident that.
Therefore, appending claims should regard whole variations and modifications of the true intention and scope that cover the present invention as.In power
In the range of sharp claim, any and all scope of equal value and content, are all considered as still belonging to the intent and scope of the invention.
Claims (12)
1. a kind of method for improving metal loss in inertial sensor, it is characterised in that include：
Step S1, the semiconductor structure for providing a pending MEMS sensor bonding technology, the semiconductor structure include oxidation
The metal level that nitride layer and the embedded oxide skin(coating) are arranged, is provided with contact area opening and sensitive zones in the oxide skin(coating)
It is open, and the part surface of the metal level of lower section is exposed by the contact area opening and the sensitive zones opening；
Step S2, the semiconductor structure surface prepare one layer of organic thin film, to cover the exposed oxide skin(coating)
With the exposed metal level；
Step S3, removal are covered in the organic thin film of the top surface of the oxide skin(coating)；
Step S4, organics removal thin film oxide skin(coating) top surface be bonded a silicon layer；
Step S5, form logical with the contact area open communication in the silicon layer by photoetching process and etching technics
Hole；
Step S6, by etching technics, form some through holes in positioned at the silicon layer of the sensitive zones overthe openings；
Step S7, removal are positioned at the remaining organic thin film in sensitive zones opening and contact area opening.
2. the method for claim 1, it is characterised in that step S5 is specifically included：
Prepare the surface that photoresist covers the silicon layer；
Formed in the photoresist opening by exposing, being developed in, the opening is positioned at the top of the contact area opening；
The silicon layer is performed etching with the photoresist for being formed with opening as mask, what formation was connected with the contact area opening
Through hole.
3. the method for claim 1, it is characterised in that the organic thin film is amorphous c film, bottom anti-reflective
Penetrate thin film or photoresist film.
4. the method for claim 1, it is characterised in that the material of the oxide skin(coating) is silicon dioxide.
5. the method for claim 1, it is characterised in that the thickness of the silicon layer is 25～100um.
6. the method for claim 1, it is characterised in that in step S7, removed by oxygen plasma ashing technique
The remaining organic thin film.
7. the method for claim 1, it is characterised in that the thickness of the remaining organic thin film is less than 2um.
8. the method for claim 1, it is characterised in that the material of the metal level is aluminum.
9. the method for claim 1, it is characterised in that the oxide skin(coating) and the metal level are arranged at a silicon substrate
Top.
10. the method for claim 1, it is characterised in that also include：
Filler metal in step S8, through hole in step s 5.
11. methods as claimed in claim 10, it is characterised in that in step S8, using electroplating technology leading in step s 5
Filler metal in hole.
12. methods as claimed in claim 11, it is characterised in that the metal of filling is tungsten in through hole in step s 5.
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| CN201510006098.6A CN105819393B (en) | 2015-01-06 | 2015-01-06 | The method for improving metal loss in inertial sensor |
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| CN201510006098.6A CN105819393B (en) | 2015-01-06 | 2015-01-06 | The method for improving metal loss in inertial sensor |
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| CN105819393B true CN105819393B (en) | 2017-04-05 |
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Citations (4)
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|---|---|---|---|---|
| US6133137A (en) * | 1997-09-02 | 2000-10-17 | Nec Corporation | Semiconductor device and method of manufacturing the same |
| CN101274739A (en) * | 2007-03-28 | 2008-10-01 | 中国科学院微电子研究所 | Preparation for non-contact micro-electronic mechanical system infrared temperature alarm |
| CN101364044A (en) * | 2008-09-26 | 2009-02-11 | 北京大学 | Minuteness processing method for upper substrate of glass |
| CN102874737A (en) * | 2011-07-12 | 2013-01-16 | 法国原子能与替代能委员会 | micro system and/or nano system type of device and manufacturing method thereof |
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2015
- 2015-01-06 CN CN201510006098.6A patent/CN105819393B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6133137A (en) * | 1997-09-02 | 2000-10-17 | Nec Corporation | Semiconductor device and method of manufacturing the same |
| CN101274739A (en) * | 2007-03-28 | 2008-10-01 | 中国科学院微电子研究所 | Preparation for non-contact micro-electronic mechanical system infrared temperature alarm |
| CN101364044A (en) * | 2008-09-26 | 2009-02-11 | 北京大学 | Minuteness processing method for upper substrate of glass |
| CN102874737A (en) * | 2011-07-12 | 2013-01-16 | 法国原子能与替代能委员会 | micro system and/or nano system type of device and manufacturing method thereof |
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