CN105819393A - Method for improving metal loss in inertia sensor - Google Patents
Method for improving metal loss in inertia sensor Download PDFInfo
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- CN105819393A CN105819393A CN201510006098.6A CN201510006098A CN105819393A CN 105819393 A CN105819393 A CN 105819393A CN 201510006098 A CN201510006098 A CN 201510006098A CN 105819393 A CN105819393 A CN 105819393A
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Abstract
The invention provides a method for improving metal loss in an inertia sensor. Before a bonding technology of a MEMS device, a layer of organic matter film is prepared on a surface of the device and is taken as a protection layer in a subsequent silicon through-hole etching technology, over etching of a metal layer below the protection layer is prevented, after the silicon through-hole etching technology is completed, an oxygen plasma technology is used for removing the organic matter film positioned in an opening of a device sensing area, so that the integrity of the metal layer is ensured, the metal loss is reduced, and sensitivity of a finally formed sensor cannot be influenced.
Description
Technical field
The present invention relates to field of manufacturing semiconductor devices, particularly relate to a kind of improve the method for metal loss in inertial sensor.
Background technology
Microelectromechanical systems (MEMS) needs higher depth-width ratio, preferable vertical profile, preferable characteristic size to control and the uniformity of etching, thus meets the demand of device.
For these reasons, in some devices, need to cut through the silicon layer that about 100nm is thick the oxide groove to lower section, and stop on the surface that the metal level below oxide groove exposes.So, it usually needs produce the over etching of 20%, thus ensure cutting through of 100um silicon through hole, and know from experience, for forming the fine and close plasma of these over etchings, the interface being loaded onto between oxide and metal level, thus cause the loss of metal level.
For the loss of metal level, its would generally affect follow-up chemical vapor deposition method (CVD) and and the deposition of tungsten, thus affect conductivity.
In order to solve above-mentioned problem, the method that current industry typically uses is, before MEMS bonding technology, first covers one layer of thin oxide, usually SiO at device surface2So that it is as the protective layer of the metal level in follow-up silicon via etch process (TSV).But, owing to, after the follow-up through hole forming sensing unit, the oxide being covered in device sensing unit part can not be removed completely, so the sensitivity decrease of final device can be caused.
Summary of the invention
In view of the above problems, the present invention provides a kind of and improves the method for metal loss in inertial sensor.
The present invention solves the technical scheme that technical problem used:
A kind of improve the method for metal loss in inertial sensor, wherein, including:
Step S1, the semiconductor structure of offer one pending MEMS sensor bonding technology, described semiconductor structure includes oxide skin(coating) and embeds the metal level that described oxide skin(coating) is arranged, described oxide skin(coating) is provided with contact area opening and sensitive zones opening, and the part surface of the described metal level of lower section is exposed by described contact area opening and described sensitive zones opening；
Step S2, prepare one layer of organic thin film on the surface of described semiconductor structure, to cover the described oxide skin(coating) and the described metal level of exposure exposed；
Step S3, removal are covered in the organic thin film of the top surface of described oxide skin(coating)；
Step S4, it is bonded a silicon layer at the top surface of the oxide skin(coating) of organics removal thin film；
Step S5, formed in described silicon layer and the through hole of described contact area open communication by photoetching process and etching technics；
Step S6, by etching technics, in the silicon layer being positioned at described sensitive zones overthe openings, form some through holes；
Step S7, removal are positioned at sensitive zones opening and the remaining described organic thin film of contact area opening.
Described method, wherein, described step S5 specifically includes:
Prepare photoresist and cover the surface of described silicon layer；
By exposure, being developed in described photoresist formation opening, described opening is positioned at the top of described contact area opening；
For mask, described photoresist is performed etching with the photoresist being formed with opening, form described through hole.
Described method, wherein, described organic thin film is amorphous c film, bottom anti-reflective thin film or photoresist film.
Described method, wherein, the material of described oxide skin(coating) is silicon dioxide.
Described method, wherein, the thickness of described silicon layer is 25～100um.
Described method, wherein, in step S7, removes remaining described organic thin film by oxygen plasma ashing technique.
Described method, wherein, the thickness of remaining described organic thin film is less than 2um.
Described method, wherein, the material of described metal level is aluminum.
Described method, wherein, described oxide skin(coating) and described metal level are arranged at the top of a silicon substrate.
Described method, wherein, also includes:
Filler metal in step S8, through hole in step s 5.
Described method, wherein, in step S8, uses filler metal in electroplating technology through hole in step s 5.
Described method, wherein, the metal filled in through hole in step s 5 is tungsten.
Technique scheme has the advantage that or beneficial effect:
Before the inventive method is by carrying out bonding technology in MEMS; first prepare one layer of organic thin film to cover on the surface of MEMS; using as the protective layer in follow-up silicon via etch process; metal level below protection is not by over etching; and; after silicon via etch process completes; by oxygen plasma ashing technique, the remaining organic thin film being positioned in device sensing unit can be removed; thus both ensure that the integrity of metal level, the most do not affect the sensitivity of final sensor simultaneously.
Accompanying drawing explanation
With reference to appended accompanying drawing, more fully to describe embodiments of the invention.But, appended accompanying drawing is merely to illustrate and illustrates, is not intended that limitation of the scope of the invention.
Fig. 1～Fig. 9 is the device architecture schematic diagram after sequentially passing through each processing step in the inventive method.
Detailed description of the invention
The invention provides and a kind of improve the method for metal loss in inertial sensor; mainly utilize organic thin film can either serve as the protective layer in silicon via etch process; it is easy to again this characteristic removed after silicon via etch process completes; to improve the metal loss in sensor, the most do not affect the sensitivity of device simultaneously.
The invention mainly includes steps:
Step S1, the semiconductor structure of offer one pending MEMS sensor bonding technology, semiconductor structure includes oxide skin(coating) and embeds the metal level that oxide skin(coating) is arranged, oxide skin(coating) is provided with contact area opening and sensitive zones opening, and the part surface of the metal level of lower section is exposed by contact area opening and sensitive zones opening；
Step S2, prepare one layer of organic thin film on the surface of MEMS sensor, to cover the oxide skin(coating) and the metal level of exposure exposed；
Step S3, removal are covered in the organic thin film of the top surface of oxide skin(coating)；
Step S4, it is bonded a silicon layer at the top surface of the oxide skin(coating) of organics removal thin film；
Step S5, formed in a layer of silicon and the through hole of contact area open communication by photoetching process and etching technics；
Step S6, by etching technics, the silicon layer being positioned at sensitive zones overthe openings is formed some through holes；
Step S7, removal are positioned at sensitive zones opening and the remaining organic thin film of contact area opening.
Below in conjunction with specific embodiments and the drawings, the inventive method is described in detail.
First, the semiconductor structure of one pending MEMS sensor bonding technology is provided, as shown in Figure 1, this MEMS sensor comprises a silicon substrate 1, on this silicon substrate, 1 is provided with oxide skin(coating) 2 and metal level 3, metal level 3 is embedded in this oxide skin(coating) 2, and is provided with sensitive zones opening 21 and contact area opening 22 in this oxide skin(coating) 2, and is exposed the partial metal layers 3 of lower section by this sensitive zones opening 21 and contact area opening 22.In the present embodiment, the material of above-mentioned oxide skin(coating) 2 is SiO2, and the material of above-mentioned metal level 3 is aluminum, those skilled in the art is it should be appreciated that the material of above-mentioned oxide skin(coating) 2 is not limited to SiO2, the material of above-mentioned metal level 3 is not limited to aluminum.
Then, as in figure 2 it is shown, prepare one layer of organic thin film 4 at above-mentioned semicon-ductor structure surface, thus the surface of above-mentioned oxide skin(coating) 2 and the surface of the metal level 3 of exposure are covered.In this step, this organic thin film 4 can be amorphous c film (A-C), it is also possible to be bottom anti-reflection layer (BARC), it is also possible to be photoresist (PR) etc..
Then, as shown in Figure 3, part removes above-mentioned organic thin film 4, the organic thin film 4 being positioned at above-mentioned oxide skin(coating) 2 top is completely removed, being positioned at the retained certain thickness of organic thin film 4 ' of above-mentioned sensitive zones opening 21 and contact area opening 22, this thickness was difficult to thin, was advisable at least can resisting follow-up 20% over etching, it can not be blocked up simultaneously, no more than the degree of depth (generally 2um) of above-mentioned sensitive zones opening 21 and contact area opening 22.
Subsequently, as shown in Figure 4, semiconductor structure through above-mentioned steps is carried out MEMS sensor bonding technology, concrete, the top key unification silicon layer 5 of oxide skin(coating) 2 in the devices, the thickness of this silicon layer 5 is generally 25～100um (such as 25um, 30um, 40um, 100um etc.), and the thickness of this silicon layer 5 can be adjusted correspondingly according to concrete process requirements.After this silicon layer 5 is bonded, it is positioned at the contact area opening below this silicon layer 5 and sensitive zones opening coordinates with this silicon layer, form cavity structure respectively.
Then, as it is shown in figure 5, preparation one layer photoetching glue covers the upper surface of this silicon layer 5, and this photoresist is exposed, developing process, thus the part being positioned at contact area overthe openings in the photoresist forms opening, and then forms the photoresist 6 of patterning.
As shown in Figure 6; the silicon layer of lower section is performed etching with the photoresist 6 of patterning for mask; thus form through hole 51 in a layer of silicon; the through hole 51 formed and the contact area open communication of lower section; owing to being coated with organic thin film in contact area opening; this Organic substance serves the effect of protection lower metal layer in the technique of via etch; and; can by control parameter in etching technics be adjusted so that etched after be positioned at the organic thin film of contact area and partially or completely removed; after having etched, remove remaining photoresist.
Then, as it is shown in fig. 7, by etching technics, in above-mentioned silicon layer 5, form some through holes 52, the position of these some through holes 52 is positioned at the top of above-mentioned sensitive zones opening, thus is opened by the chamber portion that sensitive zones opening and silicon layer are formed.
At this moment, the organic thin film being positioned at sensitive zones opening is come out again, by oxygen plasma ashing technique (O2The organic thin film of the residual in basedprocess) can will be located in this sensitive zones opening and in contact area opening is removed, to form structure as shown in Figure 8, owing to can completely reveal the metal level of lower section at sensitive zones opening 21, it can be ensured that device has enough sensitivity.In this step, the design parameter of oxygen plasma ashing technique can be adjusted according to the thickness of organic thin film remaining in sensitive zones opening.
Finally, as it is shown in figure 9, filler metal in contact area and the through hole that connects with contact area, the mode of plating typically can be used to carry out the filling of metal 7, it is preferred that optional tungsten is as the metal filled.
In sum; after being processed by above-mentioned steps; due to before carrying out silicon via etch process; above the metal exposed, there is one layer of Organic substance to be covered such that it is able in silicon via etch process, protect the metal level of lower section so that it is not by over etching; therefore; the metal being positioned at contact area opening will not lose in silicon via etch process, thus does not interferes with the filling of follow-up tungsten metal, and then ensure that conductivity；Additionally, due to previous deposition organic thin film easily with oxygen plasma precursor reactant and remove, so after silicon via etch process, very easily the unnecessary organic thin film being positioned at induction region opening can being removed, thus ensure that device sensitivity.
For a person skilled in the art, after reading described above, various changes and modifications will be apparent to undoubtedly.Therefore, appending claims should regard whole variations and modifications of true intention and the scope containing the present invention as.In Claims scope, the scope of any and all equivalence and content, be all considered as still belonging to the intent and scope of the invention.
Claims (12)
1. one kind is improved the method for metal loss in inertial sensor, it is characterised in that including:
Step S1, the semiconductor structure of offer one pending MEMS sensor bonding technology, described semiconductor structure includes oxide skin(coating) and embeds the metal level that described oxide skin(coating) is arranged, described oxide skin(coating) is provided with contact area opening and sensitive zones opening, and the part surface of the described metal level of lower section is exposed by described contact area opening and described sensitive zones opening；
Step S2, prepare one layer of organic thin film on the surface of described semiconductor structure, to cover the described oxide skin(coating) and the described metal level of exposure exposed；
Step S3, removal are covered in the organic thin film of the top surface of described oxide skin(coating)；
Step S4, it is bonded a silicon layer at the top surface of the oxide skin(coating) of organics removal thin film；
Step S5, formed in described silicon layer and the through hole of described contact area open communication by photoetching process and etching technics；
Step S6, by etching technics, in the silicon layer being positioned at described sensitive zones overthe openings, form some through holes；
Step S7, removal are positioned at sensitive zones opening and the remaining described organic thin film of contact area opening.
2. the method for claim 1, it is characterised in that described step S5 specifically includes:
Prepare photoresist and cover the surface of described silicon layer；
By exposure, being developed in described photoresist formation opening, described opening is positioned at the top of described contact area opening；
For mask, described silicon layer is performed etching with the photoresist being formed with opening, form the through hole being connected with described contact area opening.
3. the method for claim 1, it is characterised in that described organic thin film is amorphous c film, bottom anti-reflective thin film or photoresist film.
4. the method for claim 1, it is characterised in that the material of described oxide skin(coating) is silicon dioxide.
5. the method for claim 1, it is characterised in that the thickness of described silicon layer is 25～100um.
6. the method for claim 1, it is characterised in that in step S7, removes remaining described organic thin film by oxygen plasma ashing technique.
7. the method for claim 1, it is characterised in that the thickness of remaining described organic thin film is less than 2um.
8. the method for claim 1, it is characterised in that the material of described metal level is aluminum.
9. the method for claim 1, it is characterised in that described oxide skin(coating) and described metal level are arranged at the top of a silicon substrate.
10. the method for claim 1, it is characterised in that also include:
Filler metal in step S8, through hole in step s 5.
11. methods as claimed in claim 10, it is characterised in that in step S8, use filler metal in electroplating technology through hole in step s 5.
12. methods as claimed in claim 11, it is characterised in that the metal filled in through hole in step s 5 is tungsten.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113406147A (en) * | 2021-05-08 | 2021-09-17 | 中北大学 | Hydrogen sensitive element and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6133137A (en) * | 1997-09-02 | 2000-10-17 | Nec Corporation | Semiconductor device and method of manufacturing the same |
| CN101274739A (en) * | 2007-03-28 | 2008-10-01 | 中国科学院微电子研究所 | Preparation for non-contact micro-electronic mechanical system infrared temperature alarm |
| CN101364044A (en) * | 2008-09-26 | 2009-02-11 | 北京大学 | Minuteness processing method for upper substrate of glass |
| CN102874737A (en) * | 2011-07-12 | 2013-01-16 | 法国原子能与替代能委员会 | micro system and/or nano system type of device and manufacturing method thereof |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6133137A (en) * | 1997-09-02 | 2000-10-17 | Nec Corporation | Semiconductor device and method of manufacturing the same |
| CN101274739A (en) * | 2007-03-28 | 2008-10-01 | 中国科学院微电子研究所 | Preparation for non-contact micro-electronic mechanical system infrared temperature alarm |
| CN101364044A (en) * | 2008-09-26 | 2009-02-11 | 北京大学 | Minuteness processing method for upper substrate of glass |
| CN102874737A (en) * | 2011-07-12 | 2013-01-16 | 法国原子能与替代能委员会 | micro system and/or nano system type of device and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113406147A (en) * | 2021-05-08 | 2021-09-17 | 中北大学 | Hydrogen sensitive element and preparation method thereof |
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