CN105810803A - Method for preparing vertical structure LED chips - Google Patents
Method for preparing vertical structure LED chips Download PDFInfo
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- CN105810803A CN105810803A CN201410835247.5A CN201410835247A CN105810803A CN 105810803 A CN105810803 A CN 105810803A CN 201410835247 A CN201410835247 A CN 201410835247A CN 105810803 A CN105810803 A CN 105810803A
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- chip
- vertical structure
- led
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- emitting diode
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Abstract
The present invention provides a method for preparing vertical structure LED chips. The method comprises the steps of arranging vertical structure LED chips on a blue film, covering the front sides of the vertical structure LED chips with layers of protection films, coating the whole chips with high reflection glue and carrying out high temperature curing, removing the high reflection glue and protection films at the front sides of the chips, and cutting to obtain independent vertical chips with light emitting at single sides. According to the LED chips prepared by the method, the absorption of side face light by a material which supports a film chip is avoided, thus the side face light becomes effective light, and the light out efficiency of the LED chips is improved.
Description
Technical field
The present invention relates to semiconductor light-emitting-diode field, particularly to the preparation method of a kind of light emitting diode (LED) chip with vertical structure.
Background technology
LED (LightEmittingDiode, light emitting diode) it is the semiconductor device of a kind of solid-state that can convert electrical energy into visible ray, its principle of luminosity is electroluminescence, namely after adding forward current on PN junction, free electron and hole-recombination and luminous, thus directly electric energy being converted into luminous energy.LED is widely used as a kind of new lighting source material, the advantages such as response speed is fast, shock resistance good, life-span length, energy-conserving and environment-protective that it has and fast-developing, be widely used in the field such as beautification of landscape and indoor and outdoor lighting at present.
What the making of vertical structure LED adopted is the pattern of vertical stratification growth, namely it is that required material is in layer grown on substrate, light emitting diode (LED) chip with vertical structure prepared by this method is that five faces go out light, although lateral emitting face is very thin, but support material such as Si, WCu, MoCu etc. of chip, the LED light sent can be absorbed, cause that ambient light loss is more.It addition, require that LED product has the application of the features such as miniaturization, integrated, lighting angle is less at some, LED chip prepared by traditional method is the requirement not reaching these fields.Therefore, it is necessary to provide a kind of new LED chip preparation method to solve the problems referred to above.
Summary of the invention
Problem to be solved by this invention is: the preparation method providing a kind of light emitting diode (LED) chip with vertical structure, LED chip obtained by this method, and side is with high reflection white glue, solves the loss of LED chip ambient light, improves light efficiency.
For reaching above-mentioned purpose, the preparation method that the present invention provides a kind of light emitting diode (LED) chip with vertical structure, including following making step: be arranged in by light emitting diode (LED) chip with vertical structure on blue film；Lid layer protective film is covered in light emitting diode (LED) chip with vertical structure front；High anti-glue is coated with whole chip hot setting；Remove the high anti-glue of chip front side and protecting film；Obtain single one side after cutting and go out the light emitting diode (LED) chip with vertical structure of light.
Preferably, described protective film material includes: photoresist, UV film.
Preferably, the mode of the high anti-glue of described removal chip front side and protecting film: be first ground to after exposing capped thin film, spends glue or ultraviolet lighting is removed.
Preferably, must there be protecting film at described light emitting diode (LED) chip with vertical structure electrode place.
Beneficial effects of the present invention:
LED chip side prepared by the present invention is used to be with high reflection white glue, the light that chip sides sends is reflected by high reflection white glue screen frame inwall, form one side and go out the LED chip of light, avoid ambient light and supported the absorbed of thin film chip, make ambient light become effective light, improve the light extraction efficiency of LED chip.
Accompanying drawing explanation
Fig. 1 ~ Fig. 3 is the side schematic view of the manufacturing process of the embodiment of the present invention one.
Identifier declaration in figure:
1 is blue film, and 2 is LED chip, and 3 is photoresist, and 4 is high reflection white glue.
Detailed description of the invention
Embodiment one
The present embodiment adopts following steps:
Vertical stratification blue-light LED chip 2 separator or arrangement machine are arranged on blue film 1；A layer photoetching glue thin film 3 is covered in blue-light LED chip front；As in figure 2 it is shown, spin coating height reflects white glue 4 on ready Fig. 1 material, and put into hot setting height reflection white glue in baking box；By the LED chip after solidifying by the thinning high reflection white adhesive layer of grinder, when be ground to expose capped photoresist film 3 after stop；Spend glue and remove the photoresist in LED chip front, obtain LED chip as shown in Figure 3；Side must be arrived after cutting and enclose the one side light extracting LED chip of white glue.
Embodiment two
The present embodiment adopts following steps:
The difference of the present embodiment and embodiment one is in that to cover UV film in LED chip front, is removed by irradiation under ultraviolet ray when removing UV film.
The above; it is only the detailed description of the invention in the present invention; but protection scope of the present invention is not limited thereto, any people being familiar with this technology is in the technical scope that disclosed herein, the conversion that can readily occur in or replace all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claims.
Claims (4)
1. a preparation method for light emitting diode (LED) chip with vertical structure, including following making step:
(1) light emitting diode (LED) chip with vertical structure is arranged on blue film；
(2) lid layer protective film is covered in light emitting diode (LED) chip with vertical structure front；
(3) high anti-glue is coated with whole chip hot setting；
(4) the high anti-glue of chip front side and protecting film are removed；
(5) obtain single one side after cutting and go out the light emitting diode (LED) chip with vertical structure of light.
2. the preparation method of a kind of light emitting diode (LED) chip with vertical structure according to claim 1, it is characterised in that described protective film material includes: photoresist, UV film.
3. the preparation method of a kind of light emitting diode (LED) chip with vertical structure according to claim 1, it is characterised in that the mode of the high anti-glue of described removal chip front side and protecting film: be first ground to after exposing capped thin film, spends glue or ultraviolet lighting is removed.
4. the preparation method of a kind of light emitting diode (LED) chip with vertical structure according to claim 1, it is characterised in that must there be protecting film at described light emitting diode (LED) chip with vertical structure electrode place.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410835247.5A CN105810803A (en) | 2014-12-30 | 2014-12-30 | Method for preparing vertical structure LED chips |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410835247.5A CN105810803A (en) | 2014-12-30 | 2014-12-30 | Method for preparing vertical structure LED chips |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105810803A true CN105810803A (en) | 2016-07-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410835247.5A Pending CN105810803A (en) | 2014-12-30 | 2014-12-30 | Method for preparing vertical structure LED chips |
Country Status (1)
| Country | Link |
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| CN (1) | CN105810803A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108447967A (en) * | 2018-05-28 | 2018-08-24 | 易美芯光（北京）科技有限公司 | A kind of encapsulating structure of high power LED device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100780182B1 (en) * | 2006-11-16 | 2007-11-27 | 삼성전기주식회사 | Chip coating type light emitting diode package and fabrication method thereof |
| CN102376848A (en) * | 2010-08-27 | 2012-03-14 | 璨圆光电股份有限公司 | Manufacturing method of light-emitting device |
| CN102738323A (en) * | 2011-04-14 | 2012-10-17 | 日东电工株式会社 | Light emitting element sheet, and light emitting device and correspoding fabrication methods |
-
2014
- 2014-12-30 CN CN201410835247.5A patent/CN105810803A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100780182B1 (en) * | 2006-11-16 | 2007-11-27 | 삼성전기주식회사 | Chip coating type light emitting diode package and fabrication method thereof |
| CN102376848A (en) * | 2010-08-27 | 2012-03-14 | 璨圆光电股份有限公司 | Manufacturing method of light-emitting device |
| CN102738323A (en) * | 2011-04-14 | 2012-10-17 | 日东电工株式会社 | Light emitting element sheet, and light emitting device and correspoding fabrication methods |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108447967A (en) * | 2018-05-28 | 2018-08-24 | 易美芯光（北京）科技有限公司 | A kind of encapsulating structure of high power LED device |
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Application publication date: 20160727 |