CN105801877B - A kind of high poly chain base semiconductor material of cuprous iodine anion of organic inorganic hybridization - Google Patents
A kind of high poly chain base semiconductor material of cuprous iodine anion of organic inorganic hybridization Download PDFInfo
- Publication number
- CN105801877B CN105801877B CN201610307195.3A CN201610307195A CN105801877B CN 105801877 B CN105801877 B CN 105801877B CN 201610307195 A CN201610307195 A CN 201610307195A CN 105801877 B CN105801877 B CN 105801877B
- Authority
- CN
- China
- Prior art keywords
- semiconductor material
- cuprous
- inorganic hybridization
- iodide
- organic inorganic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G83/00—Macromolecular compounds not provided for in groups C08G2/00 - C08G81/00
- C08G83/008—Supramolecular polymers
Abstract
The invention discloses high poly chain base semiconductor materials of cuprous iodine anion of a kind of organic inorganic hybridization and preparation method thereof.The organic inorganic hybridization semiconductor material with wide forbidden band, molecular structural formula are (MV)n(Cu2I4)n, MV is the organic cation methyl viologen of two unit positive charges of band in formula, and n is the number of repeat unit of Polymer Structure, (the Cu in the material2I4)nHigh polyanion is of a straight line type chain structure.Coordination poly-merization occurs with the solution of methyl viologen iodide by cuprous iodide to react, semiconducting behavior and the good organic inorganic hybridization semiconductor material of thermal stability are prepared conveniently and inexpensively, its forbidden bandwidth is moderate, thermal stability is good, can be applied to photoelectron material technical field.
Description
Technical field
The present invention relates to technical field of semiconductor, are related to inorganic polymer material and organic-inorganic hybrid material neck
Domain, more particularly to iodide base semiconductor material field.
Background technique
Electronic technology is a notable feature of one of basis of the modernization of science technology and modern science and technology.When
Before, electronic technology has penetrated into the every field of national economy, and the rise of electronics industry also brings the wide of national economy
General and deep technological innovation.What is played a major role in electronic technology is the heart of electronic equipment --- it is made with semiconductor material
At element.From this, semiconductor material is just the basis of electronics industry, it is also the most important raw material of electronics industry.
Review history, since last century mid-term, the discovery of silicon materials and the integrated circuit based on silicon at the fifties initial stage
Development, result in electronics industry revolutionary character tide.Now, computer, internet, Internet of Things, robotics development day are new
The moon is different, and these technologies are also inseparable with the development of modern microelectronic technology, and with the hair of semiconductor material technology
Based on exhibition.
The Semiconductor Materials Industry in China develops by the effort of nearly half a century, has had been provided with certain basis, special
It is not after reform and opening-up, China's semiconductor material obtains apparent development, in addition to the demand for substantially meeting domestic market,
Even having had begun some materials steps into international market.But carefully it can be found that China's semiconductor product after investigation
The case where industry chain is that the technical application and market development ability of downstream are stronger, and are in the innovative design and processing of upstream end
Manufacture level is still weaker；The critical issue especially highlighted in industrial chain is then that the level of material development still needs to be mentioned
Height, this is also to need in the development of China's semiconductor industry where " seven cun " be held in the hand.Therefore, semiconductor material is researched and developed energetically
Material pushes the progress of semiconductor industry and electronic technology to be of great immediate significance.
The invention of 20 middle of century, monocrystalline silicon and semiconductor transistor and its succeeding in developing for silicon integrated circuit, result in
Electronics industry revolution；The invention of the beginning of the seventies in last century silicon fiber material and GaAs laser, promotes fiber optic communication
Technology rapidly develops and has gradually formed new high-tech industry, and the mankind is made to enter the information age.The it is proposed of superlattices concept and
Its semiconductor superlattice, quantum-well materials are succeeded in developing, and are revolutionized the design philosophy of photoelectric device, are made semiconductor devices
Design and manufacture from " impurity engineering " develop to " energy band engineering ".The development and application of nanoscale science and technology, will enable the mankind
Powerful new device and circuit are controlled, manipulate and manufactured from atom, molecule or nanoscale levels, will thoroughly be changed
Become people's lives mode.In terms of the semiconductor material that component and performance are innovated, countries in the world have also all put into and have largely ground
The amount of having an effect also obtains considerable progress.Early in 1999, China just succeeded in developing the InGaAs interband quantum stage of 980nm
Join laser；At the beginning of 2000, the quasi-continuous output power of the single semiconductor laser of France Thomson Corporation report is more than 10
Watt；It adulterating and breaks through with the p-type of GaN material in 1993, GaN base material becomes the research hotspot of blue green light luminescent material, thus
It brings using LED as what the solid-state semiconductor of representative illuminated and flourishes；And it is nearest, researcher is by utilizing perovskite structure
Lead halide base semiconductor constantly makes a breakthrough in terms of novel solar battery research and development, and current energy conversion efficiency has been equal to
U.S. silicon-based semiconductor presents huge potentiality to be exploited.
In recent years, in order to solve increasingly serious energy and environmental problem, people have invested sight the exploitation of new energy
It is upper with utilizing.In various new energy technologies, photovoltaic power generation is undoubtedly one of most promising direction.Traditional silicon substrate sun
Although energy battery realizes industrialization, have more mature market, but its cost performance can not also mutually be competed with traditional energy, and
And pollution in manufacturing process and energy consumption problem affect its extensive use.Therefore, research and development high efficiency, low cost it is new
Type solar battery is very necessary.In numerous novel solar batteries, perovskite thin film solar battery nearly 2 years de- grain husks
And go out, attract the concern of numerous researchers, one of ten big sciences breakthrough in 2013 (Wei is also chosen as by " Science "
Quiet, Zhao Qing, Li Heng apply Cheng Long, and field is for army building, Cao Guozhong, Yu great Peng, perovskite solar battery: the new hope of photovoltaic art, in
State's science: technological sciences, 2014,44 (8), 801-821.).The incident photon-to-electron conversion efficiency of perovskite thin film solar battery is 5
From 3.8% rapid 16.2% (by the end of the end of the year 2013) being increased to by certification in the time in year, dye sensitization of solar
The novel thin films solar cell such as battery, organic solar batteries is got rid of behind, this also has benefited from the high suction of such new material
Backscatter extinction logarithmic ratio.It can be seen that novel semiconductor material emerges in large numbers, the innovation of photoelectron technology is often brought simultaneously.But for existing
Modern technical application demand, existing alternative semiconductor material is still inadequate, still has very big innovation research and development space and needs
It wants.Therefore, the compound semiconductor materials for developing novel cheap novel component has great national strategic significance and important
Practical application value.
Summary of the invention
The object of the present invention is to provide a kind of high poly chain base semiconductor material of cuprous iodine anion of organic inorganic hybridization and
Preparation method.Coordination poly-merization occurs by the solution of cuprous iodide and methyl viologen iodide, makes conveniently and inexpensively
Standby to obtain semiconducting behavior and the good organic inorganic hybridization semiconductor material of thermal stability, forbidden bandwidth is moderate, hot
Stability is good, can be applied to photoelectron material technical field.
One of technical solution of the present invention is to provide a kind of new organic inorganic hybridization semiconductor material, by cuprous iodide
Coordination poly-merization occurs with the solution of methyl viologen iodide to obtain, molecular structural formula is (MV)n(Cu2I4)n, MV in formula
For the organic cation methyl viologen of two unit positive charges of band, n is the number of repeat unit of Polymer Structure, the similar degree of polymerization.
The organic cation methyl viologen is that two N in 4,4 '-second bipyridines methylate the cation to be formed, often
A cation two unit positive charges of band, molecular structure such as formula (I):
The semiconductor material is tetragonal crystal system, P42/ mnm space group, cell parameter are α=90.00 °, β=90.00 °, γ=90.00 °,Z=
2, DC=2.787g/cm3, the crystal color of material is black；The semiconductor material structures show as ionic organic inorganic hybridization
Structure, wherein cation is the isolated purpurine cation of two unit positive charges of band, and anion is then cuprous ion and iodine
(the Cu for the straight line chain structure that ionic polymerization is constituted2I4)nCuprous iodine anion, two unit negative charges of each polymerized unit band,
Total reaches neutral charge；Cuprous ion uses CuI in the polymer anion of the material4Tetrahedral coordination mode,
And each iodide ion uses μ2Abutment coordination mode is coupled two adjacent cuprous ions, and distance is between Cu-CuIn terms of the c-axis direction of its structure cell, the linear structure feature of the high poly chain of the anion；Point of the semiconductor material
Minor structure such as formula (II):
The semiconductor material is applied to medium bandgap semiconductor material, which is 1.79eV, can be strong
Visible light and ultraviolet light that photon energy is greater than the threshold value are absorbed, maximum absorption peak is located at 530nm wavelength.
The two of technical solution of the present invention, the high poly chain base of cuprous iodine anion for being to provide a kind of organic inorganic hybridization are partly led
Body material (MV)n(Cu2I4)nPreparation method.The preparation method is occurred by the solution of cuprous iodide and methyl viologen iodide
Complexation reaction obtains, and finally obtains the product of crystal powder with precipitation and realizes.Its specific embodiment is divided into three steps:
(1) cuprous iodide solid powder is dissolved in acetonitrile at room temperature, obtains clear solution A；
(2) solid of methyl viologen iodide is dissolved in water at room temperature, obtains clear solution B；
(3) solution B is added in solution A, forms muddiness at once, continues to be stirred to react half an hour after the completion of charging,
A large amount of crystalline products are formed, filtering precipitates crystal, then is washed twice respectively with water and ethyl alcohol, vacuum drying, finally obtains a large amount of
Black color crystal is the hybrid material target product.
In preparation method of the present invention, described two reactant cuprous iodides: the molar ratio of methyl viologen iodide is 2: 1.
Beneficial effects of the present invention are that the high poly chain base of cuprous iodine anion of provided organic inorganic hybridization is partly led first
Body material (MV)n(Cu2I4)n, wherein the organic cation introduced is methyl viologen MV, and purpurine cation has typical electricity
Lotus transfer characteristic forms the jumping type transmission that organic-inorganic hybrid structure is conducive to carrier with cuprous iodine anion；It is another
Aspect, the inorganic anion in the material are the cuprous iodine anion (Cu of high poly chain structure2I4)n, wherein cuprous ion uses
CuI4Tetrahedral coordination mode, and each iodide ion uses μ2Abutment coordination mode is coupled two adjacent cuprous ions, because
And the cuprous and iodide ion alternately connection that electronegativity is weaker, it is formed with conducive to the conductive inorganic high poly chain structure of linear；It is practical
Measurement shows that the material has 1.79 electron-volts of forbidden bandwidth, thus the material is preferable medium bandgap semiconductor material
Material.The organic inorganic hybridization semiconductor material had both had cheap and had been easy to the advantages of purifying, and had good thermal stability,
Technical support is provided for the further application of Hybrid semiconductor material.
Beneficial effects of the present invention followed by prepare the high poly chain base semiconductor material of cuprous iodine anion of organic inorganic hybridization
Expect (MV)n(Cu2I4)nMethod, have simple process, device therefor is simple, and production cost is low, can be in a short period of time
Obtain the product with very high yield.
Detailed description of the invention
The high poly chain base semiconductor material (MV) of the cuprous iodine anion of Fig. 1 organic inorganic hybridizationn(Cu2I4)nThe knot of molecule
Crystalline substance learns separate unit mono-crystalline structures figure.
The high poly chain base semiconductor material (MV) of the cuprous iodine anion of Fig. 2 organic inorganic hybridizationn(Cu2I4)nThe molecule Central Asia
The structure chart of the high poly- coiled strand of copper iodine anion.
The high poly chain base semiconductor material (MV) of the cuprous iodine anion of Fig. 3 organic inorganic hybridizationn(Cu2I4)nMolecule is in list
Intracellular and its peripheral space accumulation graph.
The high poly chain base semiconductor material (MV) of the cuprous iodine anion of Fig. 4 organic inorganic hybridizationn(Cu2I4)nIt is ultraviolet-can
See absorption (UV-Vis) spectrogram.
The high poly chain base semiconductor material (MV) of the cuprous iodine anion of Fig. 5 organic inorganic hybridizationn(Cu2I4)nThermogravimetric-it is poor
Hot (TG-DSC) analyzes curve, and abscissa indicates temperature, and left side ordinate indicates weight percent, and right side ordinate indicates heat
Amount.
Specific embodiment
The performance of realization process and material of the invention is illustrated by embodiment:
Embodiment 1
The high poly chain base semiconductor material (MV) of cuprous iodine anion of a large amount of organic inorganic hybridizationn(Cu2I4)nCrystalloids
The preparation of product: the cuprous iodide for weighing 0.191g (1mmol), which is dissolved in 30 milliliters of acetonitriles, obtains clear solution A, weighs 0.222g
The methyl viologen iodide of (0.5mmol), which are dissolved in 5 milliliters of water, obtains clear solution B；Then, solution A is added in above-mentioned solution B
In, muddiness is formed at once, is continued to be stirred to react half an hour after the completion of charging, is formed a large amount of crystalline products, filtering precipitates crystal, then
It is washed twice, is dried in vacuo respectively with water and ethyl alcohol, finally obtaining a large amount of black crystals is the hybrid material target product,
Yield is more than 80%.
Embodiment 2
Synthesize the high poly chain base semiconductor material (MV) of cuprous iodine anion of organic inorganic hybridizationn(Cu2I4)nMonocrystalline: claim
The cuprous iodide of amount 19mg (0.1mmol), which is dissolved in 5 milliliters of acetonitriles, obtains clear solution A, weighs the first of 22mg (0.05mmol)
Benzyl viologen iodide, which are dissolved in 5 milliliters of water, obtains clear solution B；Then, first solution B is placed in test tube, then slowly by solution A
It is added in test tube and is at the upper layer of solution B, stood after test tube sealing, there are a large amount of black bulk crystals to be precipitated after a few days.It chooses
The black bulk crystals of a 0.18mm*0.12mm*0.10mm size are selected to test for x-ray crystal structure.The compound
The structure chart of crystallography separate unit is shown graphically in the attached figures 1, the cuprous high poly chain of iodine anion and corresponding counter cation crystal violet
The structure chart of essence is shown graphically in the attached figures 2, and structure cell packed structures are illustrated in attached drawing 3.
To the high poly chain base semiconductor material (MV) of the cuprous iodine anion of organic inorganic hybridizationn(Cu2I4)nPure phase crystal
Sample has carried out some column performance tests.Ultraviolet-visible diffuse reflectance spectrum test is carried out to material crystals of the present invention, as a result table
The forbidden bandwidth of the bright material is 1.79eV, can absorb visible light and ultraviolet light that photon energy is greater than the threshold value strongly, maximum
Absorption peak is located at 530nm wavelength, and specific ultraviolet-visible spectrum is as shown in Fig. 4.Heat point has been carried out to the invention material
Analysis, thermogravimetric-differential scanning calorimetry (TG-DSC) test show that the material has preferable stability, as shown in Figure 5.As it can be seen that should
Organic-inorganic hybrid material is preferable medium bandgap semiconductor material, and the material had both had cheap and had been easy to purify excellent
Point, while also there is good thermal stability.The invention provides technical support for the further application of Hybrid semiconductor material.
Claims (4)
1. a kind of high poly chain base semiconductor material of cuprous iodine anion of organic inorganic hybridization, it is characterised in that: semiconductor material
Structural formula be (MV)n(Cu2I4)n, MV is the organic cation methyl viologen of two unit positive charges of band in formula, and n is high polymer
The number of repeat unit of structure；The organic cation methyl viologen is that two N in 4,4 '-second bipyridines methylate to be formed
Cation, each cation two unit positive charges of band, structure such as formula (I):
The semiconductor material is tetragonal crystal system, P42/ mnm space group, cell parameter are α=90.00 °, β=90.00 °, γ=90.00 °,Z=2, DC=2.787g/cm3, material
Crystal color be black；The semiconductor material structures show as ionic organic-inorganic hybrid structure, wherein cation is band
The isolated purpurine cation of two unit positive charges, and anion is then cuprous ion and the straight line chain that iodide ion polymerization is constituted
(the Cu of shape structure2I4)nCuprous iodine anion, two unit negative charges of each polymerized unit band, total reach in charge
Property；Cuprous ion uses CuI in the polymer anion of the material4Tetrahedral coordination mode, and each iodide ion uses μ2
Abutment coordination mode is coupled two adjacent cuprous ions, and distance is between Cu-CuIn terms of the c-axis direction of its structure cell,
The linear structure feature of the high poly chain of the anion；The molecular structure of the semiconductor material such as formula (II):
2. the preparation side of the high poly chain base semiconductor material of cuprous iodine anion of organic inorganic hybridization according to claim 1
Method, method the following steps are included:
(1) cuprous iodide solid powder is dissolved in acetonitrile at room temperature, obtains clear solution A；
(2) solid of methyl viologen iodide is dissolved in water at room temperature, obtains clear solution B；
(3) above-mentioned solution B is added in solution A, forms muddiness at once, continue to be stirred to react half an hour after the completion of charging, is formed
A large amount of crystalline products, filtering precipitate crystal, then are washed twice respectively with water and ethyl alcohol, and vacuum drying finally obtains a large amount of black
Crystal is the high poly chain base semiconductor material of cuprous iodine anion of the organic inorganic hybridization.
3. the preparation side of the high poly chain base semiconductor material of cuprous iodine anion of organic inorganic hybridization according to claim 2
Method, it is characterised in that: cuprous iodide: the molar ratio of methyl viologen iodide is 2: 1.
4. the application of the high poly chain base semiconductor material of cuprous iodine anion of organic inorganic hybridization according to claim 1,
It is characterized in that the semiconductor material forbidden bandwidth is 1.79eV, photon energy can be absorbed greater than the visible light of the threshold value and ultraviolet
Light, maximum absorption peak are located at 530nm wavelength, the semiconductor material application suitable for medium forbidden bandwidth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610307195.3A CN105801877B (en) | 2016-05-05 | 2016-05-05 | A kind of high poly chain base semiconductor material of cuprous iodine anion of organic inorganic hybridization |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610307195.3A CN105801877B (en) | 2016-05-05 | 2016-05-05 | A kind of high poly chain base semiconductor material of cuprous iodine anion of organic inorganic hybridization |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105801877A CN105801877A (en) | 2016-07-27 |
| CN105801877B true CN105801877B (en) | 2018-12-11 |
Family
ID=56456795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610307195.3A Expired - Fee Related CN105801877B (en) | 2016-05-05 | 2016-05-05 | A kind of high poly chain base semiconductor material of cuprous iodine anion of organic inorganic hybridization |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105801877B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110552065B (en) * | 2019-09-19 | 2020-11-24 | 华中科技大学 | Chain-like iodide material and preparation and application thereof |
| CN115074834B (en) * | 2022-05-13 | 2023-08-18 | 陕西师范大学 | Monovalent copper-based perovskite material and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1876620A (en) * | 2006-07-06 | 2006-12-13 | 上虞市金腾医药化工有限公司 | N,N'-bi(3-methylphenyl)-N,N'-diphenylbenzidine preparation method |
| CN104148112A (en) * | 2013-05-15 | 2014-11-19 | 中国科学院理化技术研究所 | Catalytic oxygen production system containing duplex pyridine ruthenium (II) complex, preparation method of duplex pyridine ruthenium (II) complex and oxygen production method |
| CN104861961A (en) * | 2015-05-21 | 2015-08-26 | 中国计量学院 | CuIN2P tetrahedral coordination cuprous complex luminous material |
| CN104910897A (en) * | 2015-06-17 | 2015-09-16 | 中国计量学院 | Cu3I2 cationic cuprous cluster compound green phosphor material |
| CN104927842A (en) * | 2015-06-17 | 2015-09-23 | 中国计量学院 | CuIN2P-type red light emitting material with cuprous complexes |
-
2016
- 2016-05-05 CN CN201610307195.3A patent/CN105801877B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1876620A (en) * | 2006-07-06 | 2006-12-13 | 上虞市金腾医药化工有限公司 | N,N'-bi(3-methylphenyl)-N,N'-diphenylbenzidine preparation method |
| CN104148112A (en) * | 2013-05-15 | 2014-11-19 | 中国科学院理化技术研究所 | Catalytic oxygen production system containing duplex pyridine ruthenium (II) complex, preparation method of duplex pyridine ruthenium (II) complex and oxygen production method |
| CN104861961A (en) * | 2015-05-21 | 2015-08-26 | 中国计量学院 | CuIN2P tetrahedral coordination cuprous complex luminous material |
| CN104910897A (en) * | 2015-06-17 | 2015-09-16 | 中国计量学院 | Cu3I2 cationic cuprous cluster compound green phosphor material |
| CN104927842A (en) * | 2015-06-17 | 2015-09-23 | 中国计量学院 | CuIN2P-type red light emitting material with cuprous complexes |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105801877A (en) | 2016-07-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106008327B (en) | A kind of organic inorganic hybridization bismuth iodine anion cluster base semiconductor material | |
| Khan et al. | Performance improvement of modified dye-sensitized solar cells | |
| CN105593206B (en) | Hole mobile material | |
| Muhammad et al. | Halide perovskite-based indoor photovoltaics: recent development and challenges | |
| CN105837834B (en) | A kind of high poly- coiled strand base organic inorganic hybridization semiconductor material of silver iodine anion | |
| Li et al. | Novel TPD-based organic D–π–A dyes for dye-sensitized solar cells | |
| CN110054638B (en) | Copper-iodine hybrid semiconductor material and photoelectric application thereof | |
| CN102712659A (en) | Electrolyte formulations | |
| Bahramian et al. | In-situ fabricated transparent conducting nanofiber-shape polyaniline/coral-like TiO2 thin film: Application in bifacial dye-sensitized solar cells | |
| CN106783184B (en) | A kind of preparation method of quantum dot sensitized nano-ZnO thin film solar cell | |
| CN103296211B (en) | Heterojunction solar battery device of organic-two dimensional crystal-inorganic hybridization and preparation method thereof | |
| CN106206951A (en) | The new application of polyvinylamine, perovskite thin film, perovskite solaode and preparation method thereof | |
| Yan et al. | CsPbBr 3 quantum dots photodetectors boosting carrier transport via molecular engineering strategy | |
| CN105801877B (en) | A kind of high poly chain base semiconductor material of cuprous iodine anion of organic inorganic hybridization | |
| Kartikay et al. | Recent advances and challenges in solar photovoltaic and energy storage materials: future directions in Indian perspective | |
| CN110054628B (en) | Water-stable hybrid lead-iodine-perovskite material and application thereof | |
| CN104810159B (en) | Preparation method for tin-doped indium phosphide quantum dot sensitized solar cell | |
| CN104310794A (en) | Porous TiO2 nanocrystalline thin film having three-dimensional nanorod floral structure as well as preparation method and application of porous TiO2 nanocrystalline thin film | |
| CN109705137B (en) | Doping-free hole transport material based on dithieno [3,2-b:2',3' -d ] pyrrole and synthetic method | |
| Yang et al. | Exploiting two-dimensional hybrid perovskites incorporating secondary amines for high-performance array photodetection | |
| CN110156616A (en) | The synthetic method for exempting to adulterate hole mobile material based on fluorene ethylene bridging aromatic rings core and its application in perovskite battery | |
| CN116854876B (en) | Covalent organic framework material for perovskite solar cell and preparation method thereof | |
| CN103227285A (en) | Bridged triphenylamine-based polymer solar battery | |
| CN107059131A (en) | A kind of semiconductor nano and preparation method and application | |
| CN113501780B (en) | Bismuth-iodine hybridized semiconductor perovskite-like material based on butylpyridinium cations |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20181211 Termination date: 20190505 |