CN104810159B - Preparation method for tin-doped indium phosphide quantum dot sensitized solar cell - Google Patents
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Abstract
The invention discloses a preparation method for a tin-doped indium phosphide quantum dot sensitized solar cell. The preparation method comprises the following steps: (1) mixing Sn<2+>, In <3+> and long-chain alkyl acid to obtain a mixture, and adding the mixture into an octadecene solvent to mix to obtain a mixed solution; (2) preparing the mixed solution into an carboxylic acid indium precursor solution containing dopant ions; (3) adding tri (trimethyl silicyl) phosphine to prepare a tin-doped indium phosphide quantum dot solution; (4) separating and purifying the indium phosphide quantum dot solution; (5) transferring the indium phosphide quantum dot solution into a water phase from an oil phase; (6) preparing a quantum dot sensitized FTO/TiO2 electrode plate; (7) assembling the quantum dot sensitized FTO/TiO2 electrode plate with a cuprous sulfide electrode plate, and injecting polysulfide electrolyte to obtain the tin-doped indium phosphide quantum dot sensitized solar cell. The preparation method is reasonable in design and convenient to operate, and the short-circuit current and the photoelectric conversion efficiency of the cell are remarkably improved, and therefore, the preparation method is suitable for being popularized and applied.
Description
Technical field
The present invention relates to a kind of quantum dot sensitized solaode, and in particular to be a kind of tin dope indium phosphide quantum dot
The preparation method of sensitization solar battery.
Background technology
With the increasingly serious and mankind of increasingly the reducing of earth fossil energy, the greenhouse effect need growing to the energy
Ask, the research of new material, new technology and method towards " green " new forms of energy is more and more important.Efficient utilization solar electrical energy generation
It is one of target of the diligent pursuit of the mankind, especially solar energy power generating.At present, the solar energy of based single crystal silicon and polysilicon
Battery be Laboratory efficiencies already close to its theoretical upper limit, it is main based on crystal silicon solar batteries on market, while various thin
The solaode of membrane material, such as CIGS, cadmium telluride thin-film battery also in promoting the use of, the experiment of these hull cells
Room peak efficiency has reached more than 20%, but cannot still replace the crystal silicon sun from from the aspect of technology stability and cost etc.
Can battery.At present, quantum dot solar cell and perovskite solaode are two focus directions of solaode research,
Wherein quantum dot cell is due to wide concerned the advantages of theoretical photoelectric efficiency height, low cost and process is simple.
Quantum dot sensitized solaode belongs to DSSC（DSSC）Category, be characterized in using narrow
The quantum dot of band gap（Inorganic semiconductor is nanocrystalline）Substitute organic dye molecule to absorb sunlight, produce light induced electron and hole
Right, Jing conductive electrodes flow into circuit to the conduction band of electronics inflow titanium dioxide again, and hole is then compensated by the electron institute in electrolyte
Form loop.Quantum dot is compared more stable for dye molecule, and can absorb a photon in theory and just produces multiple electricity
Son, so as to improve rapidly photoelectric transformation efficiency.
Although CdSe, CdS, CdTe and PbS and the quantum dot sensitized solaodes of PbSe are widely studied,
It is that the high toxicity of cadmium metal and lead can cause which be widely applied all the time as limiting CdTe film battery.Therefore, nothing
Unleaded " green " the environment-friendly type quanta point material such as indium phosphide of cadmium（InP）Etc. having obtained increasing attention.InP quantum dots are quick
Oxide/titanium dioxide forms light anode, constitutes quantum dot sensitized battery to electrode with many iodine electrolyte and platinum（Zaban, A., Micic,
O. I., etc, Langmuir 1998,14,3153）It is reported, but its efficiency is very low, is battery the reason for which is crucial
Short circuit current is too low.
In quantum dot sensitized field of batteries, to quantum dot sensitized material, to electrolyte and to the improvement of electrode continuous
Carry out, and achieve larger progress.It is also one of effectively method that the modified short circuit current that improves is doped to quantum dot,
For example number of patent application reports a kind of indium and cuprum doped with sulfureous cadmium respectively for 201210520505.1 and 201210520490.9
Quantum dot is come the method that improves cadmiumsulfide quantum dot sensitized solaode short circuit current.And the method for tin dope can equally be carried
The short circuit current of the quantum dot sensitized solaode of high InP, but there is presently no and improve InP amounts for the method using tin dope
Report in terms of son point sensitization solar battery efficiency.
The content of the invention
It is an object of the invention to provide a kind of preparation method of the quantum dot sensitized solaode of tin dope indium phosphide, main
Solve the problems, such as that the quantum dot sensitized solaodes of existing InP have short circuit current low.
To achieve these goals, the technical solution used in the present invention is as follows：
A kind of preparation method of the quantum dot sensitized solaode of tin dope indium phosphide, comprises the following steps：
（1）By Sn2+、In3+Mix according to 1: 10: 30 molar ratio with chain alkyl acid, and add to 5～10ml's
In octadecylene solvent, uniform stirring mixing, obtains mixed solution；
（2）By mixed solution in heated under vacuum to 100～120 DEG C, and 2～3h of deoxygenation, make containing dopant from
The carboxylic acid indium precursor solution of son；
（3）Carboxylic acid indium precursor solution is heated to into 250～300 DEG C in inert atmosphere, and adds three（Trimethyl silane
Base）Phosphine, obtains the indium phosphide quantum dot solution of doped tin；Described three（TMS）Phosphine and In3+Mol ratio be 1: 2；
（4）Hexane solution mixing is initially charged in the indium phosphide quantum dot solution of doped tin, then using the side of centrifugation
Formula removes by-product, obtains upper strata red, transparent solution, then adds poor solvent in the clear solution, forms suspension,
And it is settled out indium phosphide quantum dot solution after purification again by the way of centrifugation；
（5）In indium phosphide quantum dot solution, add pH value to be 10～12, and containing the water-soluble of 35%～45% mercaptopropionic acid
Liquid mixes, and 1～1.5h of high-speed stirred, then adds ionized water stirring, until indium phosphide quantum dot solution is shifted by oil phase
For water phase；
（6）By indium phosphide quantum dot solution adsorb FTO TiO2Quantum dot sensitized FTO TiO are formed on electrode2Electrode
Piece；
（7）By quantum dot sensitized FTO TiO2Electrode slice is assembled with cuprous sulfide electrode slice, and injects many sulfur electrolyte
Sandwich is formed, the quantum dot sensitized solaode of tin dope indium phosphide is obtained.
Further, the step（1）In chain alkyl acid be any one in lauric acid/dodecanoic acid to stearic acid.
Specifically, the step（3）Comprise the following steps：
（3a）Carboxylic acid indium precursor solution is heated to into 250～300 DEG C in inert atmosphere, while will be with In3+Mol ratio
For 1: 2 three（TMS）Phosphine adds into 1～3ml, 18 weak solutions mixing, before being then injected into rapidly carboxylic acid indium
Drive in liquid solution, form red solution；
（3b）Make red solution that 1～1.5h is stood in inert atmosphere, be then down to room temperature, obtain the indium phosphide of doped tin
Quantum dot solution.
Preferably, the inert atmosphere is argon or nitrogen.
Specifically, the step（4）Comprise the following steps：
（4a）The indium phosphide quantum dot solution of doped tin is mixed with 5～10ml hexane solutions, and using centrifugation
Mode removes by-product, obtains upper strata red, transparent solution；
（4b）Poor solvent is added in red, transparent solution, suspension is formed；
（4c）The quantum dot being settled out by the way of centrifugation in indium phosphide quantum dot solution again；
（4d）Circulation step（4a）~（4c）More than three times；
（4e）Indium phosphide quantum dot solution is disperseed using dichloromethane or chloroform, obtain indium phosphide quantum dot after purification
Solution.
Yet further, the step（4b）In poor solvent by mol ratio for 1: 4 methanol and acetone be mixed.
Specifically, the step（6）Comprise the following steps：
（6a）By FTO TiO2Electrode soaks 2～2.5h in indium phosphide quantum dot solution, until quantum dot fully adsorbs
In TiO2On nano-particle, quantum dot sensitized TiO is obtained2Electrode slice；
（6b）Dehydrated alcohol and ionized water are utilized respectively to quantum dot sensitized TiO2Electrode slice is rinsed, and uses nitrogen
Dry up；
（6c）By quantum dot sensitized TiO2Electrode slice respectively in the zinc acetate and sodium sulfide solution of 0.1mol/L layer by layer
Reactive deposition goes out at least four layers of ZnS layers, obtain quantum dot sensitized FTO TiO2Electrode slice；
（6d）Be utilized respectively dehydrated alcohol and ionized water to quantum dot sensitized FTO TiO2Electrode slice is rinsed, and is used in combination
Nitrogen is dried up.
Compared with prior art, the invention has the advantages that：
（1）Each step of the invention is all linked with one another, be closely connected, and which passes through the carboxylic acid indium presoma for preparing dopant ion
Solution, the indium phosphide quantum dot solution of synthesizing blender stannum, quantum dot solution isolation and purification, quantum dot phase transfer, quantum dot are inhaled
Avirulent doped tin indium phosphide quantum dot is applied to quantum dot sensitized solar battery light anode by attached mode（That is FTO
TiO2Electrode）Preparation, so as to the assembling of cuprous sulfide electrode slice, and after injecting many sulfur electrolyte, the amount of effectively enhancing
Son puts the short circuit current and overall efficiency of sensitized cells, and test shows, compares the quantum dot sensitized solar-electricity of existing indium phosphide
Pond, the present invention have been respectively increased at least 26% and 38% in the short-circuit current density and peak efficiency of battery, and the lifting of performance is very
Significantly, cadmium-free and lead-free " green ", the preparation of high-efficiency quantum dot sensitization solar battery are realized well.
（2）The present invention is preparing quantum dot sensitized FTO TiO2During electrode slice, be employed many times dehydrated alcohol and
Ionized water is rinsed, and is dried up using nitrogen, is so operated, on the one hand can clearing electrode piece surface well impurity, it is another
Aspect then can prevent which from aoxidizing while dried electrode piece, it is ensured that the preparation quality of electrode slice.
（3）Present invention process is reasonable, with low cost, simple operation, and which has filled up tin dope indium phosphide quantum dot well
Blank in terms of sensitization solar battery, the research for efficient utilization solar electrical energy generation provide strong place mat, therefore, this
Invention application prospect is quite extensive, is worth with very high practical value and large-scale promotion.
Description of the drawings
Fig. 1 is the schematic flow sheet of the present invention.
Fig. 2 is that tin dope indium phosphide quantum dot adsorbs in TiO2HRTEM figures on nano-particle.
Fig. 3 is quantum dot sensitized TiO2Section SEM schemes.
Fig. 4 is the photoelectric current conversion efficiency curve figure of the present invention-embodiment.
Fig. 5 is the electric current density-voltage curve of the present invention-embodiment.
Specific embodiment
The invention will be further described with reference to the accompanying drawings and examples, and embodiments of the present invention are included but is not limited to
The following example.
Embodiment
The invention provides a kind of preparation method of the quantum dot sensitized solaode of tin dope indium phosphide, the method be by
Stannum（Sn）Ion doping is to indium phosphide（InP）The Sn formed in quantum dot:InP quantum dots as sensitizer, the then amount of being assembled into
Son point sensitization solar battery.As shown in figure 1, the present invention mainly by the synthesizing of carboxylic acid indium precursor solution of dopant ion,
Prepared by the indium phosphide quantum dot synthesis of doped tin, quantum dot isolation and purification, quantum dot phase transfer, quantum dot sensitized light anode,
Quantum dot sensitized solaode assembles several big process compositions.
First, the synthesis of the carboxylic acid indium precursor solution of dopant ion
By Sn2+、In3+With chain alkyl acid（The present embodiment is from the one kind in lauric acid/dodecanoic acid to stearic acid）According to 1: 10: 30
Molar ratio mixing, and add into the octadecylene solvent of 5～10ml uniform stirring mix, obtain mixed solution.Then, will
In heated under vacuum to 100～120 DEG C, and 2～3h of deoxygenation makes the carboxylic acid indium forerunner containing dopant ion to mixed solution
Liquid solution.
2nd, the indium phosphide quantum dot synthesis of doped tin
After obtaining carboxylic acid indium precursor solution, by which in inert atmosphere（The present embodiment is preferably argon or nitrogen）Middle heating
To 250～300 DEG C, while will be with In3+Mol ratio is the three of 1: 2（TMS）Phosphine is added to 1～3ml, 18 weak solutions
Middle mixing, is then injected into rapidly in carboxylic acid indium precursor solution, forms red solution.
Red solution is stood in inert atmosphere 1～1.5h（Allow doped tin indium phosphide Quantum Dots Growth, synthesis）, so
After be down to room temperature, obtain the indium phosphide quantum dot solution of doped tin.In said process, solution can be prevented using inert protective atmosphere
Generation is aoxidized, so that solution can preferably grow the indium phosphide quantum dot of doped tin.
3rd, quantum dot isolation and purification
The indium phosphide quantum dot solution of doped tin is mixed with 5～10ml hexane solutions, and adopts centrifugation（Divide at a high speed
Disembark separation）Mode remove by-product, obtain upper strata red, transparent solution.Then, add in red, transparent solution by rubbing
You are formed suspension, are then settled out by the way of centrifugation again than the poor solvent of the methanol and acetone composition for 1: 4
Quantum dot in indium phosphide quantum dot solution, realizes the separation of quantum dot.
After isolating quantum dot, more than three times the step of continue cycling through above-mentioned addition hexane, mixing poor solvent, and utilize
Indium phosphide quantum dot solution is disperseed by dichloromethane or chloroform, so as to realize the purification of indium phosphide quantum dot solution.
4th, quantum dot phase transfer
Mercaptopropionic acid aqueous solution is added in indium phosphide quantum dot solution after purification（PH value：10～12, mercaptopropionic acid contains
Amount：35%～45%）Mixing, and 1～1.5h of high-speed stirred, then add ionized water stirring, until indium phosphide quantum dot solution
It is water phase by oil phase transfer.
5th, prepared by quantum dot sensitized light anode
By FTO TiO2Electrode soaks 2～2.5h in indium phosphide quantum dot solution, until quantum dot fully adsorbs in TiO2
On nano-particle（As shown in Fig. 2 bulky grain is TiO in figure2Nano-particle, indium phosphide quantum dot of the little particle for doped tin）,
Obtain quantum dot sensitized TiO2Electrode slice, as shown in Figure 3.Then dehydrated alcohol and ionized water are utilized respectively to quantum dot sensitized
TiO2Electrode slice is rinsed, and is dried up with nitrogen.
Then, by quantum dot sensitized TiO2Electrode slice respectively in the zinc acetate and sodium sulfide solution of 0.1mol/L layer by layer
Reactive deposition goes out at least four layers of ZnS layers, obtain quantum dot sensitized FTO TiO2Electrode slice（That is the light anode of battery）, finally
Be utilized respectively again dehydrated alcohol and ionized water to quantum dot sensitized FTO TiO2Electrode slice is rinsed, and is dried up with nitrogen.
6th, quantum dot sensitized solaode assembling
By quantum dot sensitized FTO TiO2Electrode slice and cuprous sulfide electrode slice are assembled, and are injected many sulfur electrolyte and formed
Sandwich, so as to complete the assembling of the quantum dot sensitized solaode of tin dope indium phosphide.
In the manner described above, the quantum dot sensitized solar-electricity of tin dope indium phosphide is prepared with a case to the present invention below
The process in pond and its illustrate with the performance comparison of the quantum dot sensitized solaode of existing indium phosphide.
116.8mg is weighed respectively（0.4mmol）Indium acetate, 14.2mg（0.04mmol）Tin acetate and 278mg
（1.2mmol）Tetradecylic acid, and add the octadecylene of 5ml, stir under vacuum condition, and deoxygenation 2h after being heated to 110 DEG C, so
270 DEG C are heated in inert atmosphere afterwards, indium precursor solution is obtained.
Weigh 50mg（0.2mmol）Three（TMS）Phosphine, and add 1ml octadecylenes to mix, it is then rapid to note
Enter in indium precursor solution, form red solution.Finally 1h is grown in inert atmosphere 260 DEG C, be then down to room temperature,
Obtain the indium phosphide quantum dot solution of doped tin.
10ml hexane solutions are added to synthesized quantum dot solution, and remove by-product using high speed centrifuge centrifugation,
Obtain upper strata red, transparent solution.Then poor solvent is added in red, transparent solution, form suspension, and use high speed centrifugation
Machine centrifugation goes out quantum dot, is then purified three times with hexane, mixing poor solvent respectively again, is finally disperseed using dichloromethane
Quantum dot solution.
The mercaptopropionic acid of 1ml is added in quantum dot solution（400uL）Aqueous solution（PH=10）, and high-speed stirred 1 hour,
Add 10ml deionized waters to stir 10 minutes, quantum dot is completed from oil phase to the transfer of water phase.
Then, by FTO TiO2Electrode soaks 2h in indium phosphide quantum dot solution, quantum dot is fully adsorbed in TiO2Receive
In rice grain, quantum dot sensitized TiO is obtained2Electrode slice, with dehydrated alcohol and ionized water to quantum dot sensitized TiO2Electrode slice
Dried up with nitrogen after flushing.After drying up, by quantum dot sensitized TiO2Electrode slice is respectively in zinc acetate and the sulfuration of 0.1mol/L
In sodium solution, reactive deposition goes out four layers of ZnS layers layer by layer, is finally utilized respectively dehydrated alcohol again and ionized water is rinsed, then
Dried up with nitrogen.
By quantum dot sensitized FTO TiO2Electrode slice is assembled with cuprous sulfide electrode slice, and injects many sulfur electrolyte（Contain
Sodium sulfide 2mol/L, sulfur 2mol/L, KCl are 0.2mol）Sandwich is formed, the assembling of battery is completed.
Fig. 4,5 are the quantum dot sensitized solaode of existing indium phosphide and tin dope indium phosphide quantum obtained in above-mentioned case
The performance comparison schematic diagram of point sensitization solar battery.Fig. 4 reflects the photoelectric current conversion efficiency of two kinds of batteries, wherein, curve A
The quantum dot sensitized solaode of existing indium phosphide is represented, curve B represents the quantum dot sensitized solar energy of indium phosphide of doped tin
Battery.Fig. 5 reflects the electric current density-voltage relationship of two kinds of batteries, wherein, it is quick that curve A represents existing indium phosphide quantum dot
Change solaode, curve B represents the quantum dot sensitized solaode of indium phosphide of doped tin.
Table 1 is performance parameter contrast of two kinds of batteries under AM1.5 standard analog illumination conditions, wherein, A represents existing
The quantum dot sensitized solaode of indium phosphide, B represent the quantum dot sensitized solaode of indium phosphide of doped tin：
Table 1
According to Fig. 4,5 and table 1 as can be seen that the present invention is by way of tin dope so that the extinction of indium phosphide quantum dot
Ability is strengthened, and reduces recombination losses rate, makes short circuit current be greatly improved.
The present invention greatly improves the performance of the quantum dot sensitized solaode of indium phosphide by rational technological design,
Which is limited, and while realize great innovation, has complied with the trend of development in science and technology well, by indium phosphide breaking through prior art
The design of quantum dot sensitized solaode is lifted to a new height.Therefore, the present invention compared to existing technology for, skill
Art progress is fairly obvious, with prominent substantive distinguishing features and significant progress.
Above-described embodiment is only the present invention preferably one of implementation, should not be used to limit the protection model of the present invention
Enclose, all change that technical solution of the present invention is made or polishings under the body design thought and spirit of the present invention, or carry out etc.
With replacing, the technical problem which solves is substantially still consistent with the present invention, should be within protection scope of the present invention.
Claims (7)
1. the preparation method of the quantum dot sensitized solaode of a kind of tin dope indium phosphide, it is characterised in that comprise the following steps：
（1）By Sn2+、In3+Mix according to 1: 10: 30 molar ratio with chain alkyl acid, and add to the octadecylene of 5～10ml
In solvent, uniform stirring mixing, obtains mixed solution；
（2）By mixed solution in heated under vacuum to 100～120 DEG C, and 2～3h of deoxygenation, make containing dopant ion
Carboxylic acid indium precursor solution；
（3）Carboxylic acid indium precursor solution is heated to into 250～300 DEG C in inert atmosphere, and adds three（TMS）
Phosphine, obtains the indium phosphide quantum dot solution of doped tin；Described three（TMS）Phosphine and In3+Mol ratio be 1: 2；
（4）Hexane solution mixing is initially charged in the indium phosphide quantum dot solution of doped tin, then is gone by the way of centrifugation
Except by-product, upper strata red, transparent solution is obtained, poor solvent is then added in the clear solution, form suspension, and again
The secondary indium phosphide quantum dot solution being settled out by the way of centrifugation after purification；
（5）In indium phosphide quantum dot solution, pH value is added to be 10～12, and the aqueous solution containing 35%～45% mercaptopropionic acid is mixed
Close, and 1～1.5h of high-speed stirred, ionized water stirring is then added, until indium phosphide quantum dot solution is water by oil phase transfer
Phase；
（6）By indium phosphide quantum dot solution adsorb FTO TiO2Quantum dot sensitized FTO TiO are formed on electrode2Electrode slice；
（7）By transom point be sensitized FTO TiO2Electrode slice is assembled with cuprous sulfide electrode slice, and injects many sulfur electrolyte formation three
Mingzhi's type structure, obtains the quantum dot sensitized solaode of tin dope indium phosphide.
2. the preparation method of the quantum dot sensitized solaode of a kind of tin dope indium phosphide according to claim 1, which is special
Levy and be, the step（1）In chain alkyl acid be any one in lauric acid/dodecanoic acid to stearic acid.
3. the preparation method of the quantum dot sensitized solaode of a kind of tin dope indium phosphide according to claim 2, which is special
Levy and be, the step（3）Comprise the following steps：
（3a）Carboxylic acid indium precursor solution is heated to into 250～300 DEG C in inert atmosphere, while will be with In3+Mol ratio is 1: 2
Three（TMS）Phosphine adds into 1～3ml, 18 weak solutions mixing, is then injected into rapidly carboxylic acid indium presoma molten
In liquid, red solution is formed；
（3b）Make red solution that 1～1.5h is stood in inert atmosphere, be then down to room temperature, obtain the indium phosphide quantum of doped tin
Point solution.
4. the preparation method of the quantum dot sensitized solaode of a kind of tin dope indium phosphide according to claim 3, which is special
Levy and be, the inert atmosphere is argon or nitrogen.
5. the preparation method of the quantum dot sensitized solaode of a kind of tin dope indium phosphide according to claim 3 or 4, its
It is characterised by, the step（4）Comprise the following steps：
（4a）The indium phosphide quantum dot solution of doped tin is mixed with 5～10ml hexane solutions, and by the way of centrifugation
By-product is removed, upper strata red, transparent solution is obtained；
（4b）Poor solvent is added in red, transparent solution, suspension is formed；
（4c）The quantum dot being settled out by the way of centrifugation in indium phosphide quantum dot solution again；
（4d）Circulation step（4a）~（4c）More than three times；
（4e）Indium phosphide quantum dot solution is disperseed using dichloromethane or chloroform, the indium phosphide quantum dot for obtaining after purification is molten
Liquid.
6. the preparation method of the quantum dot sensitized solaode of a kind of tin dope indium phosphide according to claim 5, which is special
Levy and be, the step（4b）In poor solvent by mol ratio for 1: 4 methanol and acetone be mixed.
7. the preparation method of the quantum dot sensitized solaode of a kind of tin dope indium phosphide according to claim 6, which is special
Levy and be, the step（6）Comprise the following steps：
（6a）By FTO TiO2Electrode soaks 2～2.5h in indium phosphide quantum dot solution, until quantum dot fully adsorbs in TiO2
On nano-particle, quantum dot sensitized TiO is obtained2Electrode slice；
（6b）Dehydrated alcohol and ionized water are utilized respectively to quantum dot sensitized TiO2Electrode slice is rinsed, and is dried up with nitrogen；
（6c）By quantum dot sensitized TiO2Electrode slice reacts heavy respectively in the zinc acetate and sodium sulfide solution of 0.1mol/L layer by layer
Product goes out at least four layers of ZnS layers, obtain quantum dot sensitized FTO TiO2Electrode slice；
（6d）Be utilized respectively dehydrated alcohol and ionized water to quantum dot sensitized FTO TiO2Electrode slice is rinsed, and uses nitrogen
Dry up.
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| CN106450233A (en) * | 2016-11-30 | 2017-02-22 | 陕西科技大学 | Reduced graphene oxide and indium phosphide composite nanomaterial and preparation method thereof |
| CN108893119B (en) * | 2018-07-18 | 2021-06-25 | 纳晶科技股份有限公司 | Preparation method of InP-based alloy quantum dot, device and composition |
| CN110746958A (en) | 2018-07-23 | 2020-02-04 | 三星电子株式会社 | Quantum dots, methods of making the same, and compositions, composites, and electronic devices including the same |
| CN110931259B (en) * | 2019-11-27 | 2022-02-08 | 湖北科技学院 | Preparation method of silver-gallium-indium-selenium/oxide film electrode |
| CN111117615B (en) * | 2019-12-31 | 2022-04-22 | 深圳市硅光半导体科技有限公司 | Quantum dot material, preparation method and application thereof, and light-emitting device |
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