CN105791716A - Cmostdi image sensor and control method thereof - Google Patents
Cmostdi image sensor and control method thereof Download PDFInfo
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- CN105791716A CN105791716A CN201610135831.9A CN201610135831A CN105791716A CN 105791716 A CN105791716 A CN 105791716A CN 201610135831 A CN201610135831 A CN 201610135831A CN 105791716 A CN105791716 A CN 105791716A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
- H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
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- H—ELECTRICITY
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
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- H—ELECTRICITY
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- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
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- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
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Abstract
The invention relates to a CMOSTDI image sensor being a two-stage CMOS TID image sensor. A first pixel and a second pixel at each column are provided with independent photodiodes respectively; and the two pixels share one charge transfer region and a charger amplifying region; and charges generated by exposure of the two pixels are accumulated at the charge transfer region and then the charge amplifying module outputs a corresponding voltage signal. Because charge accumulation is realized at a pixel level, no extra noise is introduced, so that the signal is doubled and the signal to noise ratio is also doubled. For an M-stage CMOSTDI image sensor, each repetition unit includes two rows of pixels; a first pixel and a second pixel at each column for each repetition unit share one charge transfer region and a charge amplifying module; and charges generated by exposure of the two pixels are accumulated at the charge transfer region and then the charge amplifying module outputs a corresponding voltage signal. The noise is only improved by the square-root-of-M/2 times and; and compared with the signal to noise ratio of the M-stage TDI sensor, the signal to noise ratio of the M-stage CMOSTDI image sensor is improved by the square-root-of-2 times.
Description
Technical field
The invention belongs to TDI image sensor technologies field, be specifically related to a kind of CMOSTDI imageing sensor and control method thereof.
Background technology
Time delays integration (TimeDelayIntegration is called for short TDI) imageing sensor is a kind of differentiation of linear imaging sensor.Imaging mechanism is that the pixel that shooting object is passed is exposed line by line, is added up by exposure results, thus solving the weak problem of imaging signal caused by high-speed moving object time of exposure deficiency.TDI imageing sensor can increase effective exposure time, improves signal noise ratio (snr) of image.
TDI imageing sensor is divided into CCD and CMOS two kinds, and owing to the imaging mechanism of TDI is consistent with ccd image sensor charge transfer mechanism, traditional TDI imageing sensor generally all adopts CCD technique to manufacture.This CCDTDI can realize the lossless transfer of electric charge and add up, and does not introduce additional noise.The M level (having the TDI imageing sensor of M row) if electric charge adds up, then signal to noise ratio promotes M times.Particularity yet with CCD technique, it is impossible to integrated other process circuit on the image sensor, and versatility and motility are poor.
Another TDI imageing sensor is CMOS type, and basic framework is as shown in Figure 1.This TDI imageing sensor is based on universal CMOS manufacturing process, and the corresponding charge transfer region of each pixel, the electric charge being transferred to this district is converted to voltage signal through an electric charge amplification module.Sensor array film speed line by line is consistent with object gait of march, each row pixel one voltage signal of output.All M line output voltage signals add up, for M level TDI imageing sensor, and signal boost M times, but voltage domain noise also promotes therewithTimes, thus signal to noise ratio only promotesTimes.In addition, add up owing to exposing the information of voltage being required for reading multirow each time, add the complexity of reading circuit design.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of CMOSTDI imageing sensor and control method thereof, and this imageing sensor is based on universal CMOS manufacturing process, it is possible to achieve the lossless transfer of electric charge, does not introduce additional noise, improves signal to noise ratio.
In order to solve above-mentioned technical problem, the CMOSTDI imageing sensor of the present invention can adopt following two kinds of technical schemes.
Technical scheme one
The CMOSTDI imageing sensor of the present invention comprises two row pixels, and wherein first, second pixel P1, the P2 of each column shares a charge transfer region and electric charge amplification module；Corresponding voltage signal is exported by electric charge amplification module after the electric charge that first, second pixel P1, P2 exposure produces is cumulative in charge transfer region.
The control method of above-mentioned CMOSTDI imageing sensor is as follows:
One, setting object by N1, N2 ..., Nn n part composition altogether, in the t1 time period, N1 moves to the imaging area of the first pixel P1, and N1 is exposed by the first pixel P1；
Two, before t1 terminates, stopping exposure, in the first pixel P1, the exposure electric charge of N1 is transferred in charge transfer region；
Three, in the t2 time period, N2 moves to the imaging area of the first pixel P1, and N2 is carried out first time exposure by the first pixel P1, and N1 moves to the imaging area of the second pixel P2 simultaneously, and N1 is carried out second time exposure by the second pixel P2；
Four, before t2 terminates, first shift the exposure electric charge of N1 in the second pixel P2 to charge transfer region, add up with the exposure electric charge of t1 time period N1, then pass through electric charge amplification module and the 2 of N1 grades of electric charge accumulation results are read；
Five, charge transfer region is resetted, then shift the exposure electric charge of N2 in the first pixel P1 to charge transfer region；
Six, in the t3 time period, N3 moves to the imaging area of the first pixel P1, and N3 is carried out first time exposure by the first pixel P1, and N2 moves to the imaging area of the second pixel P2 simultaneously, and N2 is carried out second time exposure by the second pixel P2；
Seven, before t3 terminates, first shift the exposure electric charge of N2 in the second pixel P2 to charge transfer region, add up with the exposure electric charge of t2 time period N2, then pass through electric charge amplification module and the 2 of N2 grades of electric charge accumulation results are read；
Eight, charge transfer region is resetted, then shift the exposure electric charge of N3 in the first pixel P1 to charge transfer region；
Nine, the like, 2 grades of electric charge accumulation results of Nn are finally obtained when tn+1 terminates.
Through above-mentioned steps, finally give the magnitude of voltage that 1 time 2 grades of electric charge accumulation results are corresponding of Nn, object part.
First, second pixel of 2 grades of CMOSTDI imageing sensor each column of the present invention has each independent photodiode, two pixels have a charge transfer region and electric charge amplification module, and the electric charge of two pixel exposure generations exports a corresponding voltage signal by electric charge amplification module after charge transfer region is cumulative.
For 2 grades of CMOSTDI imageing sensors of tradition, 2 grades of signals are accumulated in voltage domain and realize, and compare ordinary lines array sensor, signal boost 2 times, noise and increasingTimes, signal to noise ratio promotesTimes.Due to the fact that realizing electric charge in Pixel-level adds up, and does not introduce additional noise, signal boost 2 times, then signal to noise ratio promotes 2 times equally.
For this two-stage TDI imageing sensor, its concrete pixel structure can have multiple choices, as long as the double exposure electric charge Pixel-level that can carry out adjacent rows pixel adds up, it is achieved TDI working method, namely in the scope of protection of the invention.
Further, the CMOSTDI imageing sensor of the present invention also includes laterally overflowing grid construction of switch；Charge transfer region FD is connected with electric charge storage region by laterally overflowing grid construction of switch.
The described grid construction of switch that laterally overflows is made up of a switch transistors pipe M, and the source electrode of this switch transistors pipe M connects charge transfer region FD, drains and is connected power supply ground or arbitrary stabilized power source current potential by storage electric capacity C；Electric capacity C is as electric charge storage region in storage.
The control method of above-mentioned CMOSTDI imageing sensor is as follows:
One, first laterally overflowing grid construction of switch half conducting, if object is by N1, N2 ..., Nn n part composition altogether, in the t1 time period, N1 moves to the imaging area of the first pixel P1, and N1 is exposed by the first pixel P1；
Two, before t1 terminates, stopping exposure, in the first pixel P1, the exposure electric charge of N1 is transferred in charge transfer region, and when light exposure is less, all exposure electric charge is stored in charge transfer region, and when light exposure is bigger, unnecessary exposure electric charge spills in electric charge storage region；
Three, in the t2 time period, N2 moves to the imaging area of the first pixel P1, and N2 is carried out first time exposure by the first pixel P1, and N1 moves to the imaging area of the second pixel P2 simultaneously, and N1 is carried out second time exposure by the second pixel P2；
Four, before t2 terminates, first shifting the exposure electric charge of N1 in the second pixel P2 to charge transfer region, add up with the exposure electric charge of t1 time period N1, excess charge will be spilled in electric charge storage region by laterally spilling gate groove；By electric charge amplification module, the high gain signal of charge transfer region is read；Finally by laterally overflowing grid construction of switch Guan Bi, by electric charge amplification module, the low gain signal results after charge transfer region and electric charge storage region are redistributed is read；
Five, charge transfer region and electric charge storage region are resetted, by laterally overflowing grid construction of switch half conducting, then shift the exposure electric charge of N2 in the first pixel P1 to charge transfer region；
Six, in the t3 time period, N3 moves to the imaging area of the first pixel P1, and N3 is carried out first time exposure by the first pixel P1, and N2 moves to the imaging area of the second pixel P2 simultaneously, and N2 is carried out second time exposure by the second pixel P2；
Seven, before t3 terminates, first shifting the exposure electric charge of N2 in the second pixel P2 to charge transfer region, add up with the exposure electric charge of t2 time period N2, excess charge will be spilled in electric charge storage region by laterally spilling gate groove；By electric charge amplification module, the high gain signal of charge transfer region is read；Finally by laterally overflowing grid construction of switch Guan Bi, by electric charge amplification module, the low gain signal results after charge transfer region and electric charge storage region are redistributed is read；
Eight, charge transfer region and electric charge storage region are resetted, by laterally overflowing grid construction of switch half conducting, then shift the exposure electric charge of N3 in the first pixel P1 to charge transfer region；
Nine, the like, 2 grades of electric charge accumulation results of Nn are finally obtained when tn+1 terminates.
Through above-mentioned steps, finally give the magnitude of voltage that 1 time 2 grades of electric charge accumulation results are corresponding of Nn, object part.
By said method, two obtained height gain signal carries out synthesis process in off-chip, it is possible to increase the photosensitive dynamic range of TDI imageing sensor.
Technical scheme two
The CMOSTDI imageing sensor of the present invention comprises M/2 repetitive, and each repetitive comprises two row pixels；Each column first, second pixel of each repetitive shares a charge transfer region and an electric charge amplification module, exports corresponding voltage signal by electric charge amplification module after the electric charge that first, second pixel exposure produces is cumulative in charge transfer region；Wherein, M is the even number be more than or equal to 2.
Above-mentioned TDI imageing sensor, two row pixels constitute a repetitive, realize 2 grades of exposure electric charges and add up inside repetitive, each voltage signal repeating elementary cell output, then carry out voltage accumulation.Therefore, use the present invention, add up owing to achieving an electric charge in Pixel-level, do not introduce additional noise.Compared to the complete voltage accumulation of traditional cmos TDI imageing sensor, noise reduction of the present invention, namely for M level tradition TDI, noise and increasingTimes, but M level TDI of the present invention, noise only promotesTimes, correspondingly, the more traditional M level TDI of signal to noise ratio promotesTimes.
Charge conversion gain characterizes imageing sensor and photogenerated charge signal is converted to the ability of voltage signal.It is that adjacent rows pixel shares a charge transfer region that the present invention can promote the premise of signal to noise ratio, and charge conversion gain is constant.If the basic conception (multirow pixel shares a charge transfer region) directly utilizing the present invention realizes multistage TDI imageing sensor, then charge conversion gain reduces, charge signal after cumulative converts voltage signal values to be reduced, and corresponding noise also reduces, it is impossible to promote signal to noise ratio.
The control method of above-mentioned CMOSTDI imageing sensor is as follows:
One, setting object by N1, N2 ..., Nn n part composition altogether, in the t1 time period, N1 moves to the imaging area of first repetitive the first pixel P1, and N1 is exposed by the first pixel P1；
Two, before t1 terminates, stopping exposure, the exposure electric charge in first repetitive the first pixel P1 is transferred in the first repetitive charge transfer region；
Three, in the t2 time period, N2 moves to the imaging area of first repetitive the first pixel P1, and N2 is carried out first time exposure by the first pixel P1, and N1 moves to the imaging area of first repetitive the second pixel P2 simultaneously, and N1 is carried out second time exposure by the second pixel P2；
Four, before t2 terminates, first the exposure electric charge of N1 is shifted in first repetitive the second pixel P2 to the first repetitive charge transfer region, add up with the exposure electric charge of t1 time period N1, then pass through the first repetitive electric charge amplification module and the 2 of N1 grades of electric charge accumulation results are read；
Five, the first repetitive charge transfer region is resetted, then shift in first repetitive the first pixel P1 the exposure electric charge of N2 to the first repetitive charge transfer region；
Six, in the t3 time period, N3 moves to the imaging area of first repetitive the first pixel P1, N3 is carried out first time exposure by the first pixel P1, N2 moves to the imaging area of first repetitive the second pixel P2 simultaneously, N2 is carried out second time exposure by the second pixel P2, N1 moves to the imaging area of second repetitive the first pixel P3, and N1 is carried out third time exposure by the first pixel P3；
Seven, before t3 terminates, first the exposure electric charge of N2 is shifted in first repetitive the second pixel P2 to the first repetitive charge transfer region, add up with the exposure electric charge of t2 time period N2, then pass through the first repetitive electric charge amplification module and the 2 of N2 grades of electric charge accumulation results are read；
Eight, the first repetitive charge transfer region is resetted, then shift in first repetitive the first pixel P1 the exposure electric charge of N3 to the first repetitive charge transfer region；Shift in second repetitive the first pixel P3 the exposure electric charge of N1 to the second repetitive charge transfer region；
Nine, in the t4 time period, N4 moves to the imaging area of first repetitive the first pixel P1, N4 is carried out first time exposure by the first pixel P1, N3 moves to the imaging area of first repetitive the second pixel P2 simultaneously, N3 is carried out second time exposure by the second pixel P2, N2 moves to the imaging area of second repetitive the first pixel P3, and N2 is carried out third time exposure by second repetitive the first pixel P3；N1 moves to the imaging area of second repetitive the second pixel P4, and N1 is carried out the 4th exposure by second repetitive the second pixel P4；
Ten, before t4 terminates, first the exposure electric charge of N3 is shifted in first repetitive the second pixel P2 to the first repetitive charge transfer region, add up with the exposure electric charge of t3 time period N3, then pass through the first repetitive electric charge amplification module and the 2 of N3 grades of electric charge accumulation results are read；Shift the exposure electric charge of N1 in second repetitive the second pixel P2, to the second repetitive charge transfer region, to add up with the exposure electric charge of t3 time period N1, then pass through the second repetitive electric charge amplification module and read by the 2 of N1 grades of electric charge accumulation results simultaneously；
11, first, second repetitive charge transfer region is resetted, then shift in first repetitive the first pixel P1 the exposure electric charge of N4 to the first repetitive charge transfer region；Shift in second repetitive the first pixel P3 the exposure electric charge of N2 to the second repetitive charge transfer region；
12, the rest may be inferred, obtains the magnitude of voltage that M/2 2 grades of electric charge accumulation result of n, object part is corresponding.
Outside imageing sensor, M/2 magnitude of voltage of each part of the object obtained is carried out addition process, M level accumulation result may finally be obtained.Or it is internally integrated memory element (can be made up of) multiple capacitor arrays at imageing sensor, store M/2 voltage results, then by adder, voltage results is added up, so directly can be exported accumulation result by imageing sensor, external data addition need not process, simplify system complexity.The M level TDI imageing sensor designed by this method, signal boost M times, noise and increasingTimes.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Fig. 1 is traditional cmos TDI image sensor architecture schematic diagram.
Fig. 2 is CMOSTDI image sensor embodiment 1 configuration diagram of the present invention.
Fig. 3 is CMOSTDI imageing sensor and the imaging object corresponding relation schematic diagram in time of the embodiment of the present invention 1.
Fig. 4 a～Fig. 4 e is each row pixel operation time diagram of CMOSTDI imageing sensor of embodiment 1.
Fig. 5 is CMOSTDI image sensor embodiment 2 configuration diagram of the present invention.
Fig. 6 is CMOSTDI imageing sensor and the imaging object corresponding relation schematic diagram in time of the embodiment of the present invention 2.
Fig. 7 a～Fig. 7 k is each row pixel operation time diagram of CMOSTDI imageing sensor of embodiment 2.
Fig. 8 is the configuration diagram of the CMOSTDI image sensor embodiment 3 of the present invention.
Detailed description of the invention
Embodiment 1
As in figure 2 it is shown, CMOSTDI imageing sensor comprises two row pixels, wherein first, second pixel P1, the P2 of each column has independent photodiode PD, and two pixels share a charge transfer region FD and electric charge amplification module；Corresponding voltage signal is exported by electric charge amplification module after the electric charge that first, second pixel P1, P2 exposure produces is cumulative in the FD of charge transfer region.
Fig. 3 illustrates these 2 grades of CMOSTDI imageing sensors and imaging object corresponding relation in time.Assuming that an object is made up of tetra-parts of A, B, C, D, object relative image sensor moves.As shown in Fig. 4 a～Fig. 4 e, these 2 grades of CMOSTDI imageing sensor control method steps are as follows:
One, in the t1 time period, A moves to the imaging area of the first pixel P1, and A is exposed by the first pixel P1；
Two, before t1 terminates, stopping exposure, in the first pixel P1, the exposure electric charge of A is transferred in the FD of charge transfer region；
Three, in the t2 time period, B moves to the imaging area of the first pixel P1, and B is carried out first time exposure by the first pixel P1, and A moves to the imaging area of the second pixel P2 simultaneously, and A is carried out second time exposure by the second pixel P2；
Four, before t2 terminates, first shift the exposure electric charge of A in the second pixel P2 to charge transfer region FD, add up with the exposure electric charge of t1 time period A, then pass through electric charge amplification module and the 2 of A grades of electric charge accumulation results are read；
Five, charge transfer region FD is resetted, then shift the exposure electric charge of B in the first pixel P1 to charge transfer region FD；
Six, in the t3 time period, C moves to the imaging area of the first pixel P1, and C is carried out first time exposure by the first pixel P1, and B moves to the imaging area of the second pixel P2 simultaneously, and B is carried out second time exposure by the second pixel P2；
Seven, before t3 terminates, first shift the exposure electric charge of B in the second pixel P2 to charge transfer region FD, add up with the exposure electric charge of t2 time period B, then pass through electric charge amplification module and the 2 of B grades of electric charge accumulation results are read；
Eight, charge transfer region FD is resetted, then shift the exposure electric charge of C in the first pixel P1 to charge transfer region FD；
Nine, in the t4 time period, D moves to the imaging area of the first pixel P1, and D is carried out first time exposure by the first pixel P1, and C moves to the imaging area of the second pixel P2 simultaneously, and C is carried out second time exposure by the second pixel P2；
Ten, before t4 terminates, first shift the exposure electric charge of C in the second pixel P2 to charge transfer region FD, add up with the exposure electric charge of t3 time period C, then pass through electric charge amplification module and the 2 of C grades of electric charge accumulation results are read；
11, charge transfer region FD is resetted, then shift the exposure electric charge of D in the first pixel P1 to charge transfer region FD；
12, in the t5 time period, D moves to the imaging area of the second pixel P2, and D is carried out second time exposure by the second pixel P2；
13, before t5 terminates, first shift the exposure electric charge of D in the second pixel P2 to charge transfer region FD, add up with the exposure electric charge of t4 time period D, then pass through electric charge amplification module and the 2 of D grades of electric charge accumulation results are read；
14, charge transfer region FD is resetted, finally give 2 grades of electric charge accumulation results of tetra-parts of object A, B, C, D.
Embodiment 2
As it is shown in figure 5, CMOSTDI imageing sensor comprises M/2 repetitive, each repetitive comprises two row pixels；Each column first, second pixel of each repetitive shares a charge transfer region and an electric charge amplification module, exports corresponding voltage signal by electric charge amplification module after the electric charge that first, second pixel exposure produces is cumulative in charge transfer region；Wherein, M is the even number be more than or equal to 2.
Fig. 6 illustrates 6 grades of CMOSTDI imageing sensors and imaging object corresponding relation in time.Assuming that an object is made up of six parts of A, B, C, D, E, F, object relative image sensor moves.As shown in Fig. 7 a～Fig. 7 k, these 6 grades of CMOSTDI imageing sensor control method steps are as follows:
One, in the t1 time period, A moves to the imaging area of first repetitive the first pixel P1, and A is exposed by the first pixel P1；
Two, before t1 terminates, stopping exposure, the exposure electric charge in first repetitive the first pixel P1 is transferred in the first repetitive charge transfer region FD；
Three, in the t2 time period, B moves to the imaging area of first repetitive the first pixel P1, and B is carried out first time exposure by the first pixel P1, and A moves to the imaging area of first repetitive the second pixel P2 simultaneously, and A is carried out second time exposure by the second pixel P2；
Four, before t2 terminates, first the exposure electric charge of A is shifted in first repetitive the second pixel P2 to the first repetitive charge transfer region FD, add up with the exposure electric charge of t1 time period A, then pass through the first repetitive electric charge amplification module and the 2 of A grades of electric charge accumulation results are read；
Five, the first repetitive charge transfer region FD is resetted, then shift in first repetitive the first pixel P1 the exposure electric charge of B to the first repetitive charge transfer region FD；
Six, in the t3 time period, C moves to the imaging area of first repetitive the first pixel P1, C is carried out first time exposure by the first pixel P1, B moves to the imaging area of first repetitive the second pixel P2 simultaneously, B is carried out second time exposure by the second pixel P2, A moves to the imaging area of second repetitive the first pixel P3, and A is carried out third time exposure by the first pixel P3；
Seven, before t3 terminates, first the exposure electric charge of B is shifted in first repetitive the second pixel P2 to the first repetitive charge transfer region FD, add up with the exposure electric charge of t2 time period B, then pass through the first repetitive electric charge amplification module and the 2 of B grades of electric charge accumulation results are read；
Eight, the first repetitive charge transfer region FD is resetted, then shift in first repetitive the first pixel P1 the exposure electric charge of C to the first repetitive charge transfer region FD；Shift in second repetitive the first pixel P3 the exposure electric charge of A to the second repetitive charge transfer region FD；
Nine, in the t4 time period, D moves to the imaging area of first repetitive the first pixel P1, D is carried out first time exposure by the first pixel P1, C moves to the imaging area of first repetitive the second pixel P2 simultaneously, C is carried out second time exposure by the second pixel P2, B moves to the imaging area of second repetitive the first pixel P3, and B is carried out third time exposure by second repetitive the first pixel P3；A moves to the imaging area of second repetitive the second pixel P4, and A is carried out the 4th exposure by second repetitive the second pixel P4；
Ten, before t4 terminates, first the exposure electric charge of C is shifted in first repetitive the second pixel P2 to the first repetitive charge transfer region FD, add up with the exposure electric charge of t3 time period C, then pass through the first repetitive electric charge amplification module and the 2 of C grades of electric charge accumulation results are read；Shift the exposure electric charge of A in second repetitive the second pixel P4, to the second repetitive charge transfer region FD, to add up with the exposure electric charge of t3 time period A, then pass through the second repetitive electric charge amplification module and read by the 2 of A grades of electric charge accumulation results simultaneously；
11, first, second repetitive charge transfer region FD is resetted, then shift in first repetitive the first pixel P1 the exposure electric charge of D to the first repetitive charge transfer region FD；Shift in second repetitive the first pixel P3 the exposure electric charge of B to the second repetitive charge transfer region FD；
12, in the t5 time period, E moves to the imaging area of first repetitive the first pixel P1, E is carried out first time exposure by the first pixel P1, D moves to the imaging area of first repetitive the second pixel P2 simultaneously, D is carried out second time exposure by the second pixel P2, C moves to the imaging area of second repetitive the first pixel P3, and C is carried out third time exposure by second repetitive the first pixel P3；B moves to the imaging area of second repetitive the second pixel P4, and B is carried out the 4th exposure by second repetitive the second pixel P4；A moves to the imaging area of the third repeating unit the first pixel P5, and A is carried out five times exposure by the third repeating unit the first pixel P5；
13, before t5 terminates, first the exposure electric charge of D is shifted in first repetitive the second pixel P2 to the first repetitive charge transfer region FD, add up with the exposure electric charge of t4 time period D, then pass through the first repetitive electric charge amplification module and the 2 of D grades of electric charge accumulation results are read；Shift the exposure electric charge of B in second repetitive the second pixel P4, to the second repetitive charge transfer region FD, to add up with the exposure electric charge of t4 time period B, then pass through the second repetitive electric charge amplification module and read by the 2 of B grades of electric charge accumulation results simultaneously；
14, first, second repetitive charge transfer region FD is resetted, then shift in first repetitive the first pixel P1 the exposure electric charge of E to the first repetitive charge transfer region FD；Shift in second repetitive the first pixel P3 the exposure electric charge of C to the second repetitive charge transfer region FD；In transfer the third repeating unit the first pixel P5, the exposure electric charge of A is to the third repeating unit charge transfer region FD；
15, in the t6 time period, F moves to the imaging area of first repetitive the first pixel P1, F is carried out first time exposure by the first pixel P1, E moves to the imaging area of first repetitive the second pixel P2 simultaneously, E is carried out second time exposure by the second pixel P2, D moves to the imaging area of second repetitive the first pixel P3, and D is carried out third time exposure by second repetitive the first pixel P3；C moves to the imaging area of second repetitive the second pixel P4, and C is carried out the 4th exposure by second repetitive the second pixel P4；B moves to the imaging area of the third repeating unit the first pixel P5, and B is carried out five times exposure by the third repeating unit the first pixel P5；A moves to the imaging area of the third repeating unit the second pixel P6, and A is carried out the 6th exposure by the third repeating unit the second pixel P6；
16, before t6 terminates, first the exposure electric charge of E is shifted in first repetitive the second pixel P2 to the first repetitive charge transfer region FD, add up with the exposure electric charge of t5 time period E, then pass through the first repetitive electric charge amplification module and the 2 of E grades of electric charge accumulation results are read；Shift the exposure electric charge of C in second repetitive the second pixel P4, to the second repetitive charge transfer region FD, to add up with the exposure electric charge of t5 time period C, then pass through the second repetitive electric charge amplification module and read by the 2 of C grades of electric charge accumulation results simultaneously；In transfer the third repeating unit the second pixel P6, the exposure electric charge of A, to the third repeating unit charge transfer region FD, adds up with the exposure electric charge of t5 time period A, then passes through the second repetitive electric charge amplification module and read by the 2 of A grades of electric charge accumulation results simultaneously；
17, first, second, third repetitive charge transfer region FD is resetted, then shift in first repetitive the first pixel P1 the exposure electric charge of F to the first repetitive charge transfer region FD；Shift in second repetitive the first pixel P3 the exposure electric charge of D to the second repetitive charge transfer region FD；In transfer the third repeating unit the first pixel P5, the exposure electric charge of B is to the third repeating unit charge transfer region FD；
18, in the t7 time period, F moves to the imaging area of first repetitive the second pixel P2, F is carried out second time exposure by the second pixel P2, and E moves to the imaging area of second repetitive the first pixel P3, and E is carried out third time exposure by second repetitive the first pixel P3；D moves to the imaging area of second repetitive the second pixel P4, and D is carried out the 4th exposure by second repetitive the second pixel P4；C moves to the imaging area of the third repeating unit the first pixel P5, and C is carried out five times exposure by the third repeating unit the first pixel P5；B moves to the imaging area of the third repeating unit the second pixel P6, and B is carried out the 6th exposure by the third repeating unit the second pixel P6；
19, before t7 terminates, first the exposure electric charge of F is shifted in first repetitive the second pixel P2 to the first repetitive charge transfer region FD, add up with the exposure electric charge of t6 time period E, then pass through the first repetitive electric charge amplification module and the 2 of F grades of electric charge accumulation results are read；Shift the exposure electric charge of D in second repetitive the second pixel P4, to the second repetitive charge transfer region FD, to add up with the exposure electric charge of t6 time period D, then pass through the second repetitive electric charge amplification module and read by the 2 of D grades of electric charge accumulation results simultaneously；In transfer the third repeating unit the second pixel P6, the exposure electric charge of B, to the third repeating unit charge transfer region FD, adds up with the exposure electric charge of t6 time period B, then passes through the second repetitive electric charge amplification module and read by the 2 of B grades of electric charge accumulation results simultaneously；
20, first, second, third repetitive charge transfer region FD is resetted, then shift in second repetitive the first pixel P3 the exposure electric charge of E to the second repetitive charge transfer region FD；In transfer the third repeating unit the first pixel P5, the exposure electric charge of C is to the third repeating unit charge transfer region FD；
21, in the t8 time period, F moves to the imaging area of second repetitive the first pixel P3, and F is carried out third time exposure by second repetitive the first pixel P3；E moves to the imaging area of second repetitive the second pixel P4, and E is carried out the 4th exposure by second repetitive the second pixel P4；D moves to the imaging area of the third repeating unit the first pixel P5, and D is carried out five times exposure by the third repeating unit the first pixel P5；C moves to the imaging area of the third repeating unit the second pixel P6, and C is carried out the 6th exposure by the third repeating unit the second pixel P6；
22, before t8 terminates, shift in second repetitive the second pixel P4 the exposure electric charge of E to the second repetitive charge transfer region FD, add up with the exposure electric charge of t7 time period E, then pass through the second repetitive electric charge amplification module and the 2 of E grades of electric charge accumulation results are read；In transfer the third repeating unit the second pixel P6, the exposure electric charge of C, to the third repeating unit charge transfer region FD, adds up with the exposure electric charge of t7 time period C, then passes through the second repetitive electric charge amplification module and read by the 2 of C grades of electric charge accumulation results simultaneously；
23, second, third repetitive charge transfer region FD is resetted, then shift in second repetitive the first pixel P3 the exposure electric charge of F to the second repetitive charge transfer region FD；In transfer the third repeating unit the first pixel P5, the exposure electric charge of D is to the third repeating unit charge transfer region FD；
24, in the t9 time period, F moves to the imaging area of second repetitive the second pixel P4, and F is carried out the 4th exposure by second repetitive the second pixel P4；E moves to the imaging area of the third repeating unit the first pixel P5, and E is carried out five times exposure by the third repeating unit the first pixel P5；D moves to the imaging area of the third repeating unit the second pixel P6, and D is carried out the 6th exposure by the third repeating unit the second pixel P6；
25, before t9 terminates, shift in second repetitive the second pixel P4 the exposure electric charge of F to the second repetitive charge transfer region FD, add up with the exposure electric charge of t8 time period F, then pass through the second repetitive electric charge amplification module and the 2 of F grades of electric charge accumulation results are read；In transfer the third repeating unit the second pixel P6, the exposure electric charge of D, to the third repeating unit charge transfer region FD, adds up with the exposure electric charge of t8 time period D, then passes through the second repetitive electric charge amplification module and read by the 2 of D grades of electric charge accumulation results simultaneously；
26, second, third repetitive charge transfer region FD is resetted, then in transfer the third repeating unit the first pixel P5 the exposure electric charge of E to the third repeating unit charge transfer region FD；
27, in the t10 time period, F moves to the imaging area of the third repeating unit the first pixel P5, and F is carried out five times exposure by the third repeating unit the first pixel P5；E moves to the imaging area of the third repeating unit the second pixel P6, and E is carried out the 6th exposure by the third repeating unit the second pixel P6；
28, before t10 terminates, in transfer the third repeating unit the second pixel P6, the exposure electric charge of E is to the third repeating unit charge transfer region FD, add up with the exposure electric charge of t9 time period E, then pass through the third repeating unit electric charge amplification module and the 2 of E grades of electric charge accumulation results are read；
29, the third repeating unit charge transfer region FD is resetted, then in transfer the third repeating unit the first pixel P5 the exposure electric charge of F to the third repeating unit charge transfer region FD；
30, in the t11 time period, F moves to the imaging area of the third repeating unit the second pixel P6, and F is carried out the 6th exposure by the third repeating unit the second pixel P6；
31, before t11 terminates, in transfer the third repeating unit the second pixel P6, the exposure electric charge of F is to the third repeating unit charge transfer region FD, add up with the exposure electric charge of t10 time period F, then pass through the third repeating unit electric charge amplification module and the 2 of F grades of electric charge accumulation results are read；
32, the third repeating unit charge transfer region FD is resetted, finally give the magnitude of voltage that 3 times 2 grades of electric charge accumulation results are corresponding of six parts of object.
Outside imageing sensor, 3 magnitudes of voltage obtained are carried out addition process, 6 grades may finally be obtained and add up, signal boost 6 times, noise and increasingTimes.
Embodiment 3
As shown in Figure 8, the CMOSTDI imageing sensor of the present invention comprises laterally spilling grid construction of switch and two row pixels, laterally overflows grid construction of switch and is made up of a switch transistors pipe M；Wherein first, second pixel P1, the P2 of each column shares a charge transfer region FD and electric charge amplification module；Corresponding voltage signal is exported by electric charge amplification module after the electric charge that first, second pixel P1, P2 exposure produces is cumulative in the FD of charge transfer region；The source electrode of switch transistors pipe M connects charge transfer region FD, drains by storing electric capacity C connection power supply ground or arbitrary stabilized power source current potential；Electric capacity C is as electric charge storage region in storage.
These 2 grades of CMOSTDI imageing sensor control method steps are as follows:
One, in the t1 time period, A moves to the imaging area of the first pixel P1, and A is exposed by the first pixel P1；
Two, before t1 terminates, stop exposure, in first pixel P1, the exposure electric charge of A is transferred in the FD of charge transfer region, the horizontal grid half that overflow are made to turn on (half conducting voltage setting principle is to ensure that the electromotive force overflowed under gate groove lower than floating diffusion region FD and is higher than the electromotive force that photodiode is reset) before transfer, so when light exposure is less, all exposure electric charge is stored in charge transfer region, and when light exposure is bigger, unnecessary exposure electric charge spills in electric charge storage region；
Three, in the t2 time period, B moves to the imaging area of the first pixel P1, and B is carried out first time exposure by the first pixel P1, and A moves to the imaging area of the second pixel P2 simultaneously, and A is carried out second time exposure by the second pixel P2；
Four, before t2 terminates, first shifting the exposure electric charge of A in the second pixel P2 to charge transfer region FD, add up with the exposure electric charge of t1 time period A, excess charge will be spilled in storage electric capacity C by laterally spilling gate groove；By electric charge amplification module, the high gain signal of charge transfer region FD is read；Finally switch transistors pipe M is closed, by electric charge amplification module, the 2 of A grades of cumulative electric charges at charge transfer region FD and are stored the low gain signal results reading after electric capacity C redistributes；
Five, charge transfer region FD and storage electric capacity C is resetted, will laterally overflow grid half conducting, then shift the exposure electric charge of B in the first pixel P1 to charge transfer region FD；
Six, in the t3 time period, C moves to the imaging area of the first pixel P1, and C is carried out first time exposure by the first pixel P1, and B moves to the imaging area of the second pixel P2 simultaneously, and B is carried out second time exposure by the second pixel P2；
Seven, before t3 terminates, first shifting the exposure electric charge of B in the second pixel P2 to charge transfer region FD, add up with the exposure electric charge of t2 time period B, excess charge will be spilled in storage electric capacity C by laterally spilling gate groove；By electric charge amplification module, the high gain signal of charge transfer region FD is read；Finally switch transistors pipe M is closed, by electric charge amplification module, the 2 of B grades of cumulative electric charges at charge transfer region FD and are stored the low gain signal results reading after electric capacity C redistributes；
Eight, charge transfer region FD and storage electric capacity C is resetted, will laterally overflow grid half conducting, then shift the exposure electric charge of C in the first pixel P1 to charge transfer region FD；
Nine, in the t4 time period, D moves to the imaging area of the first pixel P1, and D is carried out first time exposure by the first pixel P1, and C moves to the imaging area of the second pixel P2 simultaneously, and C is carried out second time exposure by the second pixel P2；
Ten, before t4 terminates, first the exposure electric charge of C in the second pixel P2 is shifted to charge transfer region FD and storage electric capacity C, add up with the exposure electric charge of t3 time period C, then pass through electric charge amplification module and high-gain and the low gain signal of the 2 of C grades of electric charge accumulation results are read respectively；
11, charge transfer region FD and storage electric capacity C is resetted, then shift the exposure electric charge of D in the first pixel P1 to charge transfer region FD；
12, in the t5 time period, D moves to the imaging area of the second pixel P2, and D is carried out second time exposure by the second pixel P2；
13, before t5 terminates, first the exposure electric charge of D in the second pixel P2 is shifted to charge transfer region FD and storage electric capacity C, add up with the exposure electric charge of t4 time period D, then pass through electric charge amplification module and high-gain and the low gain signal of the 2 of D grades of electric charge accumulation results are read respectively；
14, by charge transfer region FD and storage electric capacity C reset, two yield values of 2 grades of electric charge accumulation results of tetra-parts of object A, B, C, D are finally given.Two the height gain signals obtained carry out synthesis process in off-chip, it is possible to increase the photosensitive dynamic range of TDI imageing sensor.
Laterally overflowing grid construction of switch and can also adopt the high dynamically transistor of a high dynamic transistor or multiple series connection, the raceway groove of high dynamically transistor is as electric charge storage region.
In the present invention, Fig. 2, Fig. 5 sensor architecture is a rough schematic, is not intended to concrete image element circuit structure.If the framework that various image sensor pixels are provided by this schematic diagram (two row pixels share a charge transfer region) and control method, it is possible to realize 2 grades of TDI or multistage TDI function, namely in the scope of protection of the invention.
Claims (7)
1. a CMOSTDI imageing sensor, comprises two row pixels, it is characterised in that first, second pixel (P1) of each column, (P2) share a charge transfer region and electric charge amplification module；The electric charge that first, second pixel (P1), (P2) exposure produce exports corresponding voltage signal by electric charge amplification module after adding up in charge transfer region.
2. CMOSTDI imageing sensor according to claim 1, it is characterised in that also include laterally overflowing grid construction of switch；Charge transfer region (FD) is connected with electric charge storage region by laterally overflowing grid construction of switch.
3. CMOSTDI imageing sensor according to claim 2, it is characterized in that the described grid construction of switch that laterally overflows is made up of a switch transistors pipe (M), the source electrode of this switch transistors pipe (M) connects charge transfer region (FD), drains and is connected power supply ground or arbitrary stabilized power source current potential by storage electric capacity (C)；Storage electric capacity (C) is as electric charge storage region.
4. the control method of a CMOSTDI imageing sensor as claimed in claim 1, it is characterised in that the method comprises the steps:
One, setting object by N1, N2 ..., Nn n part composition altogether, in the t1 time period, N1 moves to the imaging area of the first pixel (P1), and N1 is exposed by the first pixel (P1)；
Two, before t1 terminates, stopping exposure, in the first pixel (P1), the exposure electric charge of N1 is transferred in charge transfer region；
Three, in the t2 time period, N2 moves to the imaging area of the first pixel (P1), N2 is carried out first time exposure by the first pixel (P1), and N1 moves to the imaging area of the second pixel (P2) simultaneously, and N1 is carried out second time exposure by the second pixel (P2)；
Four, before t2 terminates, first shift the exposure electric charge of N1 in the second pixel (P2) and, to charge transfer region, add up with the exposure electric charge of t1 time period N1, then pass through electric charge amplification module and the 2 of N1 grades of electric charge accumulation results are read；
Five, charge transfer region is resetted, then shift in the first pixel (P1) the exposure electric charge of N2 to charge transfer region；
Six, in the t3 time period, N3 moves to the imaging area of the first pixel (P1), N3 is carried out first time exposure by the first pixel (P1), and N2 moves to the imaging area of the second pixel (P2) simultaneously, and N2 is carried out second time exposure by the second pixel (P2)；
Seven, before t3 terminates, first shift the exposure electric charge of N2 in the second pixel (P2) and, to charge transfer region, add up with the exposure electric charge of t2 time period N2, then pass through electric charge amplification module and the 2 of N2 grades of electric charge accumulation results are read；
Eight, charge transfer region is resetted, then shift in the first pixel (P1) the exposure electric charge of N3 to charge transfer region；
Nine, the like, 2 grades of electric charge accumulation results of Nn are finally obtained when tn+1 terminates.
5. the control method of a CMOSTDI imageing sensor as claimed in claim 3, it is characterised in that the method comprises the steps:
One, first grid construction of switch half conducting will laterally be overflowed；If object is by N1, N2 ..., Nn n part composition altogether, in the t1 time period, N1 moves to the imaging area of the first pixel (P1), and N1 is exposed by the first pixel (P1)；
Two, before t1 terminates, stopping exposure, in the first pixel (P1), the exposure electric charge of N1 is transferred in charge transfer region, when light exposure is less, all exposure electric charge is stored in charge transfer region, and when light exposure is bigger, unnecessary exposure electric charge spills in electric charge storage region；
Three, in the t2 time period, N2 moves to the imaging area of the first pixel (P1), N2 is carried out first time exposure by the first pixel (P1), and N1 moves to the imaging area of the second pixel (P2) simultaneously, and N1 is carried out second time exposure by the second pixel (P2)；
Four, before t2 terminates, first shifting the exposure electric charge of N1 in the second pixel (P2) and, to charge transfer region, add up with the exposure electric charge of t1 time period N1, excess charge will be spilled in electric charge storage region by laterally spilling gate groove；By electric charge amplification module, the high gain signal of charge transfer region is read；Finally by laterally overflowing grid construction of switch Guan Bi, by electric charge amplification module, the low gain signal results after charge transfer region and electric charge storage region are redistributed is read；
Five, charge transfer region and electric charge storage region are resetted, will laterally overflow grid construction of switch half conducting, then shift in the first pixel (P1) the exposure electric charge of N2 to charge transfer region；
Six, in the t3 time period, N3 moves to the imaging area of the first pixel (P1), N3 is carried out first time exposure by the first pixel (P1), and N2 moves to the imaging area of the second pixel (P2) simultaneously, and N2 is carried out second time exposure by the second pixel (P2)；
Seven, before t3 terminates, first shifting the exposure electric charge of N2 in the second pixel (P2) and, to charge transfer region, add up with the exposure electric charge of t2 time period N2, excess charge will be spilled in electric charge storage region by laterally spilling gate groove；By electric charge amplification module, the high gain signal of charge transfer region is read；Finally by laterally overflowing grid construction of switch Guan Bi, by electric charge amplification module, the low gain signal results after charge transfer region and electric charge storage region are redistributed is read；
Eight, charge transfer region and electric charge storage region are resetted, will laterally overflow grid construction of switch half conducting, then shift in the first pixel (P1) the exposure electric charge of N3 to charge transfer region；
Nine, the like, 2 grades of electric charge accumulation results of Nn are finally obtained when tn+1 terminates.
6. a CMOSTDI imageing sensor, it is characterised in that comprise M/2 repetitive, each repetitive comprises two row pixels；Each column first, second pixel of each repetitive shares a charge transfer region and an electric charge amplification module, exports corresponding voltage signal by electric charge amplification module after the electric charge that first, second pixel exposure produces is cumulative in charge transfer region；Wherein, M is the even number be more than or equal to 2.
7. the control method of a CMOSTDI imageing sensor as claimed in claim 6, it is characterised in that the method comprises the steps:
One, setting object by N1, N2 ..., Nn n part composition altogether, in the t1 time period, N1 moves to the imaging area of the first repetitive the first pixel (P1), and N1 is exposed by the first pixel (P1)；
Two, before t1 terminates, stopping exposure, the exposure electric charge in the first repetitive the first pixel (P1) is transferred in the first repetitive charge transfer region；
Three, in the t2 time period, N2 moves to the imaging area of the first repetitive the first pixel (P1), N2 is carried out first time exposure by the first pixel (P1), N1 moves to the imaging area of the first repetitive the second pixel (P2) simultaneously, and N1 is carried out second time exposure by the second pixel (P2)；
Four, before t2 terminates, first the exposure electric charge of N1 is shifted in the first repetitive the second pixel (P2) to the first repetitive charge transfer region, add up with the exposure electric charge of t1 time period N1, then pass through the first repetitive electric charge amplification module and the 2 of N1 grades of electric charge accumulation results are read；
Five, the first repetitive charge transfer region is resetted, then shift in the first repetitive the first pixel (P1) the exposure electric charge of N2 to the first repetitive charge transfer region；
Six, in the t3 time period, N3 moves to the imaging area of the first repetitive the first pixel (P1), N3 is carried out first time exposure by the first pixel (P1), N2 moves to the imaging area of the first repetitive the second pixel (P2) simultaneously, N2 is carried out second time exposure by the second pixel (P2), N1 moves to the imaging area of the second repetitive the first pixel (P3), and N1 is carried out third time exposure by the first pixel (P3)；
Seven, before t3 terminates, first the exposure electric charge of N2 is shifted in the first repetitive the second pixel (P2) to the first repetitive charge transfer region, add up with the exposure electric charge of t2 time period N2, then pass through the first repetitive electric charge amplification module and the 2 of N2 grades of electric charge accumulation results are read；
Eight, the first repetitive charge transfer region is resetted, then shift in the first repetitive the first pixel (P1) the exposure electric charge of N3 to the first repetitive charge transfer region；Shift in the second repetitive the first pixel (P3) the exposure electric charge of N1 to the second repetitive charge transfer region；
Nine, in the t4 time period, N4 moves to the imaging area of the first repetitive the first pixel (P1), N4 is carried out first time exposure by the first pixel (P1), N3 moves to the imaging area of the first repetitive the second pixel (P2) simultaneously, N3 is carried out second time exposure by the second pixel (P2), N2 moves to the imaging area of the second repetitive the first pixel (P3), and N2 is carried out third time exposure by the second repetitive the first pixel (P3)；N1 moves to the imaging area of the second repetitive the second pixel (P4), and N1 is carried out the 4th exposure by the second repetitive the second pixel (P4)；
Ten, before t4 terminates, first the exposure electric charge of N3 is shifted in the first repetitive the second pixel (P2) to the first repetitive charge transfer region, add up with the exposure electric charge of t3 time period N3, then pass through the first repetitive electric charge amplification module and the 2 of N3 grades of electric charge accumulation results are read；Shift in the second repetitive the second pixel (P2) the exposure electric charge of N1 to the second repetitive charge transfer region simultaneously, add up with the exposure electric charge of t3 time period N1, then pass through the second repetitive electric charge amplification module and the 2 of N1 grades of electric charge accumulation results are read；
11, first, second repetitive charge transfer region is resetted, then shift in the first repetitive the first pixel (P1) the exposure electric charge of N4 to the first repetitive charge transfer region；Shift in the second repetitive the first pixel (P3) the exposure electric charge of N2 to the second repetitive charge transfer region；
12, the rest may be inferred, obtains the magnitude of voltage that M/2 2 grades of electric charge accumulation result of n, object part is corresponding.
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