CN105789010B - Plasma processing apparatus and the adjusting method of plasma distribution - Google Patents
Plasma processing apparatus and the adjusting method of plasma distribution Download PDFInfo
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- CN105789010B CN105789010B CN201410836727.3A CN201410836727A CN105789010B CN 105789010 B CN105789010 B CN 105789010B CN 201410836727 A CN201410836727 A CN 201410836727A CN 105789010 B CN105789010 B CN 105789010B
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Abstract
The invention discloses a kind of plasma processing apparatus, and it includes reaction chamber and driver element.Reaction chamber includes being used for the pedestal for loading pending substrate；The combined type shield ring set around substrate peripheral, it includes inner ring and outer rings；And multiple forked connecting rods, its upper end are divided into inside and outside two poles, wherein outside pole corresponds to outer shroud, inner side pole corresponds to inner ring.Each pole top has supporting part, and the height of the supporting part of outside pole is more than the height of the supporting part of inner side pole.Driver element drives forked connecting rod to vertically move between the first position and the second position, and when forked connecting rod is located at first position, the supporting part of two poles does not contact with combined type shield ring；When forked connecting rod rises to the second place, outer shroud supports the supporting part of patch outside pole, inner ring supports the supporting part for pasting inner side pole.The present invention can improve the uniformity of substrate surface plasma distribution.
Description
Technical field
The present invention relates to semiconductor processing equipment and method, more particularly to a kind of plasma processing apparatus and application this at
The method for managing the regulation plasma distribution of device.
Background technology
Plasma processing apparatus is widely used in various semiconductor fabrication process, such as depositing operation (such as chemical gas
Mutually deposit), etching technics (such as dry etching).By taking plasma etch process as an example, Fig. 1 shows one kind electricity of prior art
Feel the structural representation of coupled plasma etch device.The top of reaction chamber 10 has insulation cover plate 11, the bottom of reaction chamber 10
Portion is provided with the electrostatic chuck 14 for clamping pending substrate W, and air admission unit 12 is arranged at the lateral wall insulation of reaction chamber 10
The lower section of cover plate 11.Inductance-coupled coil 13 is set on insulation cover plate 11, and coil passes through adaptation (not shown) and radio frequency source (figure
In do not show) connection, the magnetic field of alternation is produced by being passed through radio-frequency current in coil 13, and then is generated in reaction chamber 10
Electric field, the reacting gas ionization generation plasma of reaction chamber 10 will be entered by air admission unit 11 with to pending substrate W
Surface carries out corona treatment.
However, in actual applications, use the uniformity of the plasma density caused by above-mentioned plasma device
Unsatisfactory, the density of caused plasma has the feature distribution that fringe region is higher than intermediate region.And due to base
The speed that piece carries out corona treatment is related to plasma density distribution or atomic group distribution, will ultimately result in plasma
The uneven situation of body handling process：For example, substrate edge etching or processing speed are fast, intermediate region etching or processing speed
Slowly.This is easy for causing inconsistent, the technology controlling and process manufactured to semiconductor devices of device feature size in the range of whole substrate
And yield rate all has a significant impact.Therefore, how to improve the uniformity of plasma processing apparatus plasma density is this
Art personnel are badly in need of the technical problem solved at present.
Accordingly, it is desirable to provide a kind of improved plasma processing apparatus, can improve the uniformity that plasma is distributed.
The content of the invention
The defects of it is a primary object of the present invention to overcome prior art, there is provided it is more uniform that one kind can obtain distribution
The plasma processing apparatus of plasma density and atomic group Density Distribution.
To reach above-mentioned purpose, the present invention provides a kind of plasma processing apparatus, and it includes reaction chamber and driving is single
Member.Wherein, reaction chamber includes：Pedestal in the reaction chamber, for loading pending substrate；Around the substrate
The moveable combined type shield ring that sets of outer circumferential side, it includes inner ring and outer rings, and the internal diameter of the outer shroud is more than described interior
The internal diameter of ring；And multiple forked connecting rods, its upper end are divided into inside and outside two poles, wherein the position correspondence of outside pole is in described
Outer shroud, the position correspondence of inner side pole is in the inner ring；Wherein, the top of each pole has a supporting part, described outer
The height of the supporting part of side pole is more than the height of the supporting part of the inner side pole.The driver element and the forked connecting rod
Lower end connection, for driving the forked connecting rod to vertically move between the first position and the second position；Wherein when the fork
When shape connecting rod is located at the first position, the supporting part of described two poles does not contact with the combined type shield ring；Work as institute
When stating forked connecting rod and rising to the second place, the outer shroud supports the supporting part for pasting the outside pole, the inner ring supports patch
The supporting part of the inner side pole.
Preferably, the reaction chamber also includes a positioning component, and the positioning component includes being located at the outer shroud respectively
With the depressed part inserted in inner ring, for the supporting part of the outside pole and inner side pole.
Preferably, the reaction chamber also includes a positioning component, and the positioning component is included respectively from the lateral branch
The contact pin that bar and the supporting part of inner side pole upwardly extend, and be located at respectively in the outer shroud and inner ring, accordingly for described outer
The slot of the contact pin of side pole and inner side pole insertion；The supporting part not can be inserted into its corresponding slot.
Preferably, the slot is through slot or blind slot, when the slot is blind slot, can be inserted into the described of the blind slot and inserts
The length of pin is less than or equal to the groove depth of the blind slot.
Preferably, when the forked connecting rod is located at the first position, the outer shroud and inner ring are bonded to each other and make institute
Combined type shield ring is stated to be integrally formed.
Preferably, when the forked connecting rod is located at the first position, the combined type shield ring by the pedestal or
Cover the non-conductive ring support of the pedestal.
Preferably, the height of the supporting part of the outside pole is more than 3~200mm of the supporting part of the inner side pole.
Preferably, when the forked connecting rod is located at the second place, the lower surface of the inner ring is located at the substrate
Upper surface above -5~20mm.
Preferably, the combined type shield ring and the forked connecting rod are that plasma-resistant material is made or surface is with anti-
Plasma coating.
According to another aspect of the present invention, a kind of plasma applied to above-mentioned plasma processing apparatus is additionally provided
The adjusting method of distribution, including：
The forked connecting rod is risen into the second place by the first position, by the outer shroud and the height of inner ring
Degree difference is adjusted to the difference in height of the outside pole and inner side pole；
By the process gas in the outer shroud regulation reaction chamber and its cross direction profiles of plasma and lead to
Cross the plasma reaction speed that the inner ring adjusts the substrate edge.
Compared to prior art, the beneficial effects of the present invention are the lift adjustment combined type shield ring by forked connecting rod
The difference in height of middle inner ring and outer shroud, inner ring is utilized to adjust to be utilized respectively the distribution of outer shroud adjusting process gas and its plasma
The plasma reaction speed of whole substrate edge, finally cause substrate surface corona treatment rate uniform.
Brief description of the drawings
Fig. 1 is the structural representation of the plasma processing apparatus of prior art；
Fig. 2 a are the structure of plasma processing apparatus when forked connecting rod is located at first position of one embodiment of the invention
Schematic diagram；
Fig. 2 b are the structure of plasma processing apparatus when forked connecting rod is located at the second place of one embodiment of the invention
Schematic diagram；
Fig. 3 shows for the connection of forked connecting rod and combined type shield ring in the plasma processing apparatus of one embodiment of the invention
It is intended to.
Embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Walk explanation.Certainly the invention is not limited in the specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.
Fig. 2 a and Fig. 2 b are the structural representations of plasma processing apparatus according to an embodiment of the invention.It should manage
Solve, the plasma processing apparatus in the present invention can be plasma etching, plasma physical vapor deposition, plasma
The devices such as chemical vapor deposition, plasma surface cleaning, what plasma processing apparatus was merely exemplary, it can include
Less or more element, or the arrangement of the element may be to that indicated in the drawings identical or different.
As illustrated, the top of reaction chamber 20 has insulation cover plate 21, insulation cover plate 21 is usually ceramic dielectric material.Instead
The side wall of chamber 20 is answered to be provided with the air admission unit 22 for being used for the inside of reaction chamber 20 inputting process gas at top.Reaction chamber
The bottom of room 20 is provided with the pedestal 24 for loading pending substrate W.Inductive is configured above the outside of insulation cover plate 21
Coil 23, provide radio-frequency current to coil 23 by radio frequency source (not shown) and generate electric field in reaction chamber 20, it is right with this
The process gas being incorporated into by air admission unit 22 in chamber is ionized and produces plasma.In addition, in the present embodiment, air inlet
Unit 22 is formed in the side wall of reaction chamber 20 at insulation cover plate, but it can also be formed in other embodiments
In insulation cover plate.Moveable combined type shield ring 25 and multiple forked connecting rods 26 are additionally provided with reaction chamber 20.Combined type
Shield ring 25 is set around substrate W outer circumferential side, including inner ring 251 and outer shroud 252, the internal diameter of outer shroud 252 are greater than inner ring 251
Internal diameter.Outer shroud 252 and the internal diameter of inner ring 251 can need to be designed as being all higher than substrate diameter according to technique, be respectively less than substrate
Diameter or the internal diameter of outer shroud 252 are more than substrate diameter and the internal diameter of inner ring 251 is less than substrate diameter.Because combined type shield ring 25 is waiting
Preferably it is made of plasma-resistant material in processing environment all the time during ion processing or there is plasma resistant
Coating, and being preferred with being not easy to produce pollution in the chamber, plasma-resistant material can be conductive material such as aluminium, or dielectric material
Such as ceramics or quartz.Heretofore described forked connecting rod 26 refers to that upper end is divided into two poles, a branch is merged into lower end
The connecting rod of the shape and structure of bar.In the present embodiment, the upper end of forked connecting rod 26 is inside and outside two poles 261,262, wherein outside
The position correspondence of pole 262 is in outer shroud 252, and the position correspondence of inner side pole 261 is in inner ring 251.The top of each pole
Corresponding outer shroud or the supporting part of inner ring can be supported with one, in the present embodiment, pole is cylindricality, and supporting part is post
The top levels of shape pole, in other embodiments, the cross sectional shape of pole can be T-shaped, then have larger top
Portion's horizontal plane is as supporting part.It should be noted that the height of the supporting part of outside pole is greater than the supporting part of inner side pole
Height, in general, both differences in height are 3~200mm.Driver element 30 is connected with the lower end of forked connecting rod 26, is used for
Forked connecting rod is driven to vertically move between the first position and the second position.
Fig. 2 a show schematic diagram when forked connecting rod is positioned at first position, now the support of two poles 261,262
Portion is not in contact with combined type shield ring 25, and combined type shield ring is preferably by pedestal or covered the non-conductive ring support of pedestal
And adjacent substrate W, " dead ring " herein can be cover ring (cover ring), shield ring (shadow ring), focusing ring
(focus ring), edge ring (edge ring) etc., are not any limitation as to it.As it was previously stated, when forked connecting rod 26 positions
When first position, outer shroud 252 and the adjacent substrate of inner ring 251, now, outer shroud 252 and inner ring 251 can both be bonded to each other and make
Combined type shield ring 25 is integrally formed, and the internal diameter of outer shroud 252 can also be set to be more than the external diameter of inner ring 251, one is set between inner and outer ring
Set a distance.The accumulation for avoiding polymer between inner and outer ring gap is should be noted during design.As illustrated, inner ring in the present embodiment
251 external diameter is equal with the internal diameter of outer shroud 252, therefore the inner peripheral surface of outer shroud 252 is bonded each other with the outer peripheral face of inner ring 521, this
When combined type shield ring only play a part of adjust substrate edge corona treatment speed or do not work.In addition, figure
Forked connecting rod 26 is movably located in pedestal 24 in 2a, but corresponding to the different structure of pedestal 24, forked connecting rod 26
Can movably be arranged in the dead ring being circumferentially positioned at around pedestal, or in chamber 20.
Fig. 2 b show schematic diagram when forked connecting rod rises to the second place, and now outer shroud 252 supports patch outside pole 262
Supporting part, inner ring 251 then support patch inner side pole 261 supporting part, thus by the difference in height between outer shroud 252 and inner ring 251
Expand as the difference in height between outside pole 262 and inner side pole 261.Now, the upper surface of inner ring 251 is located at the upper of substrate W
Surface -5~20mm, stop portions plasma is played, so as to play plasma density near regulation substrate, reduce
The effect of substrate edge reaction rate.And because outer shroud 252 is under the support of lateral branch bar 262, height is significantly larger than inner ring 251
Height, now outer shroud 252 be used to carry out transverse barriers to the process gas in injection reaction chamber, by process gas to reaction
Chamber central area guides, while the distribution that the plasma of generation is dissociated to process gas is subject to lateral confinement, avoids technique
Gas not will be completely dissociated into the problem of plasma is i.e. by outside pump drainage to reaction chamber in reaction chamber, while reduce anti-
The process gas and plasma distribution density in cavity margin region are answered, improves the plasma distribution density of central area,
Improve the distribution consistency degree of substrate W surface plasma.Further, process gas and its plasma pass through outer shroud 252
Backward lower diffusion, is constrained by inner ring 251, so as to adjust the process gas of substrate edge and its plasma again near substrate W
Body distribution density, it is final so that the reaction rate of substrate W whole surfaces is uniform.Further, since forked connecting rod 26 is positioned at second
Largely it is exposed to during position in plasma, therefore preferable forked connecting rod is also made of plasma-resistant material or surface
Coating with plasma-resistant material, and be preferred with being not easy to produce pollution in the chamber, plasma-resistant material can be led
Electric material such as aluminium, or dielectric material such as ceramics or quartz.
In the embodiment shown in Fig. 2 a and 2b, the supporting part of inner side pole 261 and outside pole 262 is its top water
Plane, to keep the stable position of outer shroud 252 and inner ring 251 during vertically moving forked connecting rod 26, prevent from sliding or tremble
It is dynamic, a positioning component is preferably also set up in reaction chamber, in the forked uphill process of connecting rod 26, strengthening outside/interior
Stability of the supporting part of side pole to outer shroud/inner ring support.Please continue to refer to Fig. 3, positioning component is included respectively from lateral branch
The contact pin 272,271 that bar 262 and the supporting part of inner side pole 261 upwardly extend, and it is located at outer shroud 252 and inner ring 251 respectively
In, the corresponding slot 282,281 for supplying the contact pin 272,271 of outside pole and inner side pole to insert.The size of slot is corresponding
The size of contact pin matches.It should be noted that supporting part is in its not pluggable corresponding slot, as size is more than slot
Size, so as to inner and outer ring is passed through corresponding contact pin and on supporting part corresponding to being fastened on.In the present embodiment, slot 282,
281 be through slot, and the height of the contact pin 271 of insertion inner ring slot 281 should be less than the supporting part of outside pole and inner side pole
Difference in height, to avoid the contact pin 271 when forked connecting rod rises to the second place from interfering or be inserted into shadow in outer shroud with outer shroud
Ring the effect of contraction of outer shroud.Certain slot 282,282 can also be blind slot (i.e. not through slot), if the length of contact pin less than etc.
In the depth of corresponding blind slot, equally can by slot and contact pin cooperation by inner and outer ring stable position corresponding pole branch
On support part.In addition, in other embodiments, positioning component may also be to be located in outer shroud 252 and inner ring 251, for lateral branch respectively
Bar 262 and the depressed part of the supporting part of inner side pole 261 insertion, the size phase of the size of depressed part and corresponding supporting part
Match somebody with somebody.By the way that when forked connecting rod rises to the second place, supporting part is embedded into corresponding depressed part to realize the firm of inner and outer ring
Positioning.
By above-mentioned plasma processing apparatus, can be needed according to technique to the plasma in reaction chamber point
Cloth is adjusted, and is comprised the following steps that：
First, forked connecting rod will be risen to the second place by first position, the difference in height of outer shroud and inner ring will be adjusted to
The difference in height of outside pole and inner side pole.Then the process gas and its plasma in reaction chamber are adjusted by outer shroud
Cross direction profiles, pass through inner ring adjust substrate edge plasma reaction speed.
In summary, plasma processing apparatus of the invention, can using the cooperation of combined type shield ring and forked connecting rod
The inner ring and outer rings of combined type shield ring are positioned at different height, it is thus anti-with outer shroud adjustment in plasma-treating technology
Answer the distribution of process gas and its plasma in chamber and utilize the masking of inner ring further to adjust the plasma of substrate edge
Precursor reactant speed, the plasma density of corresponding substrate center region and fringe region is uniformly distributed, and then makes plasma
Processing of the body to substrate is evenly.
Although the present invention is disclosed as above with preferred embodiment, right many embodiments are illustrated only for the purposes of explanation
, the present invention is not limited to, those skilled in the art can make without departing from the spirit and scope of the present invention
Some changes and retouching, the protection domain that the present invention is advocated should be to be defined described in claims.
Claims (10)
1. a kind of plasma processing apparatus, comprising：
Reaction chamber, it includes：
For loading the pedestal of pending substrate, in the reaction chamber；
Moveable combined type shield ring, the outer circumferential side around the substrate are set, and it includes inner ring and outer rings, the outer shroud
Internal diameter is more than the internal diameter of the inner ring；And
Multiple forked connecting rods, its upper end are divided into inside and outside two poles, wherein the position correspondence of outside pole is in the outer shroud, inner side
The position correspondence of pole is in the inner ring；Wherein, the top of each pole has a supporting part, the branch of the outside pole
The height of support part is more than the height of the supporting part of the inner side pole；
Driver element, it is connected with the lower end of the forked connecting rod, for driving the forked connecting rod in first position and second
Vertically moved between putting；Wherein when the forked connecting rod is located at the first position, the supporting part of described two poles is not
Contacted with the combined type shield ring；When the forked connecting rod rises to the second place, the outer shroud, which supports, to be pasted outside described
The supporting part of side pole, the inner ring support the supporting part for pasting the inner side pole, by between the outer shroud and the inner ring
Difference in height of the larger height difference between the outside pole and the supporting part of the inner side pole.
2. plasma processing apparatus according to claim 1, it is characterised in that the reaction chamber also includes a positioning
Component, the positioning component are included respectively in the outer shroud and inner ring, for the support of the outside pole and inner side pole
The depressed part of portion's insertion.
3. plasma processing apparatus according to claim 1, it is characterised in that the reaction chamber also includes a positioning
Component, the positioning component include the contact pin upwardly extended respectively from the supporting part of the outside pole and inner side pole, and
It is located at respectively in the outer shroud and inner ring, accordingly for the slot of the contact pin of the outside pole and inner side pole insertion；The branch
Support part not can be inserted into its corresponding slot.
4. plasma processing apparatus according to claim 3, it is characterised in that the slot is through slot or blind slot,
When the slot is blind slot, the length that can be inserted into the contact pin of the blind slot is less than or equal to the groove depth of the blind slot.
5. plasma processing apparatus according to claim 1, it is characterised in that when the forked connecting rod is positioned at described the
During one position, the outer shroud and inner ring are bonded to each other and are integrally formed the combined type shield ring.
6. plasma processing apparatus according to claim 3, it is characterised in that when the forked connecting rod is positioned at described the
During one position, the combined type shield ring is by the pedestal or the non-conductive ring support of the covering pedestal.
7. plasma processing apparatus according to claim 1, it is characterised in that the height of the supporting part of the outside pole
Height 3~200mm of the degree more than the supporting part of the inner side pole.
8. plasma processing apparatus according to claim 1, it is characterised in that when the forked connecting rod is positioned at described the
During two positions, the upper surface of the inner ring is located at -5~20mm above the upper surface of the substrate.
9. plasma processing apparatus according to claim 1, it is characterised in that the combined type shield ring and the fork
Shape connecting rod is that plasma-resistant material is made or surface has plasma resistant coating.
A kind of 10. adjusting method of plasma distribution, at the plasma as described in any one of claim 1~9
Manage device, it is characterised in that including：
The forked connecting rod is risen into the second place by the first position, by the outer shroud and the difference in height of inner ring
It is adjusted to the difference in height of the outside pole and inner side pole；
By the process gas in the outer shroud regulation reaction chamber and its cross direction profiles of plasma and pass through institute
State inner ring and block the plasmas of crystal round fringes to adjust the plasma reaction speed of the substrate edge.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410836727.3A CN105789010B (en) | 2014-12-24 | 2014-12-24 | Plasma processing apparatus and the adjusting method of plasma distribution |
| TW104128008A TWI578369B (en) | 2014-12-24 | 2015-08-26 | Plasma processing device and regulating method of plasma distribution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410836727.3A CN105789010B (en) | 2014-12-24 | 2014-12-24 | Plasma processing apparatus and the adjusting method of plasma distribution |
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| Publication Number | Publication Date |
|---|---|
| CN105789010A CN105789010A (en) | 2016-07-20 |
| CN105789010B true CN105789010B (en) | 2017-11-10 |
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| CN201410836727.3A Active CN105789010B (en) | 2014-12-24 | 2014-12-24 | Plasma processing apparatus and the adjusting method of plasma distribution |
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| TW (1) | TWI578369B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108369922B (en) | 2016-01-26 | 2023-03-21 | 应用材料公司 | Wafer edge ring lifting solution |
| US9947517B1 (en) | 2016-12-16 | 2018-04-17 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| US10553404B2 (en) | 2017-02-01 | 2020-02-04 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| TWI704252B (en) * | 2017-09-04 | 2020-09-11 | 台灣積體電路製造股份有限公司 | Lift device, chemical vapor deposition apparatus and method |
| US11075105B2 (en) | 2017-09-21 | 2021-07-27 | Applied Materials, Inc. | In-situ apparatus for semiconductor process module |
| US11043400B2 (en) | 2017-12-21 | 2021-06-22 | Applied Materials, Inc. | Movable and removable process kit |
| US11201037B2 (en) | 2018-05-28 | 2021-12-14 | Applied Materials, Inc. | Process kit with adjustable tuning ring for edge uniformity control |
| US11935773B2 (en) | 2018-06-14 | 2024-03-19 | Applied Materials, Inc. | Calibration jig and calibration method |
| CN109473333B (en) * | 2018-10-08 | 2021-03-16 | 深圳市华星光电半导体显示技术有限公司 | Etching machine |
| US11289310B2 (en) | 2018-11-21 | 2022-03-29 | Applied Materials, Inc. | Circuits for edge ring control in shaped DC pulsed plasma process device |
| US11101115B2 (en) | 2019-04-19 | 2021-08-24 | Applied Materials, Inc. | Ring removal from processing chamber |
| CN111508803B (en) * | 2020-04-23 | 2023-01-17 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber, wafer edge protection method and semiconductor equipment |
| CN115881506B (en) * | 2023-03-02 | 2023-06-27 | 深圳市新凯来技术有限公司 | Plasma adjusting device and semiconductor etching equipment |
| CN117116816B (en) * | 2023-10-24 | 2024-01-23 | 上海谙邦半导体设备有限公司 | Air inlet device and air inlet method |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201624525A (en) | 2016-07-01 |
| TWI578369B (en) | 2017-04-11 |
| CN105789010A (en) | 2016-07-20 |
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