CN105786047A - Semiconductor laser temperature control system based on TEC - Google Patents
Semiconductor laser temperature control system based on TEC Download PDFInfo
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- CN105786047A CN105786047A CN201610329519.3A CN201610329519A CN105786047A CN 105786047 A CN105786047 A CN 105786047A CN 201610329519 A CN201610329519 A CN 201610329519A CN 105786047 A CN105786047 A CN 105786047A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
- G05D23/2033—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature details of the sensing element
- G05D23/2034—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature details of the sensing element the sensing element being a semiconductor
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Abstract
The invention relates to a semiconductor laser temperature control system based on TEC. It is characterized in that the temperature control system comprises a temperature sensor, a one-chip microcomputer, a TEC digital PWM power drive circuit and a TEC heat dissipation module. The TEC heat dissipation module comprises a TEC, a refrigeration block, a heat dissipation aluminum plate and an exhaust fan. The cold surface and the hot surface of the TEC are both coated with heat conducting silicone grease. The cold surface of the TEC is clung to the refrigeration block and the hot surface of the TEC is clung to the heat dissipation aluminum plate. The exhaust fan is arranged under the heat dissipation aluminum plate; one end of the temperature sensor is connected with the semiconductor laser, and the other end is connected with an input-output pin of the one-chip microcomputer; the PID algorithm is stored inside the one-chip microcomputer; the output end of the one-chip microcomputer is connected with one end of the TEC digital PWM power drive circuit; the other end of the TEC digital PWM power drive circuit is connected with a TEC wiring terminal of the TEC heat dissipation module; the circuit structure of the TEC digital PWM power drive circuit is that a base of a triode Q1 is connected with the output end of the one-chip microcomputer; the output end of the one-chip microcomputer is connected with a power supply terminal VCC through a resistor R2.
Description
Technical field
The present invention relates to temperature controlled technical field, be specifically related to a kind of temperature control system of semiconductor laser based on TEC.
Background technology
Up to now, semiconductor laser has developed more than 50 year, and these short decades, the performance of semiconductor laser various aspects all obtains significant raising.Semiconductor laser, as a kind of novel light source, because it has the series of advantages such as volume is little, lightweight, high efficiency, low-power drive, direct modulation, has been applied to fields such as communicating, military, medical more and more widely.But semiconductor laser is all influenced by temperature due to its output wavelength, threshold current, service life, output etc., limits the use of laser instrument, therefore semiconductor laser temperature controls the application of laser instrument is served critically important effect.
At present, temperature control system on the market mainly has two big forms: on-off control and large-scale industrial temperature control module.Utilize that on-off control temperature is simple and convenient, easily operate, but the temperature fluctuation controlled is big, unstable；And large-scale industrial temperature control accuracy is high, good stability, but expensive and that it is huge volume is not suitable for being applied on the miniature devices such as semiconductor laser.Although the temperature control system of semiconductor laser of finished product is on sale, but price is all somewhat expensive, based on such situation, a kind of low price, high stability the development of temperature control system of semiconductor laser there is certain economic worth and realistic meaning.
CN104331102A discloses one " the laser temperature control circuit based on TEC ", this control circuit employs NTC thermistor as temperature sensor to measure temperature signal, use the special temperature control chip of MAX1978 of MAXIM company, but this chip price is expensive, and the design circuit of NTC is complicated, measurement result temperature error is relatively big, in addition, do not dispelled the heat in the hot junction of TEC by this patent in time so that temperature control effect is poor.
Summary of the invention
For the deficiencies in the prior art, the technical problem that the present invention intends to solve is to provide a kind of temperature control system of semiconductor laser based on TEC.This temperature control system adopts pwm power drive circuit to drive TEC, utilizes the switching characteristic of field effect transistor, by adjusting the dutycycle of PWM pulse width signal, it is possible to adjusts TEC and exports the size of electric current.Can being shed by the heat in hot junction in time, the temperature to reach noise spectra of semiconductor lasers controls, and this temperature control system circuit structure is simple simultaneously, and at a low price and stablize, control accuracy is higher, is particularly suited in the temperature control of the miniature devices such as semiconductor laser.
This invention address that described technical problem the technical scheme is that a kind of temperature control system of semiconductor laser based on TEC of offer, it is characterized in that this temperature control system includes temperature sensor, single-chip microcomputer, TEC digital PWM power driving circuit and TEC radiating subassembly, described TEC radiating subassembly includes TEC, cold-making block, heat-dissipating aluminium plate and exhaust fan, the huyashi-chuuka (cold chinese-style noodles) of TEC and hot side are all evenly coated with heat-conducting silicone grease, cold-making block is close to by the huyashi-chuuka (cold chinese-style noodles) of TEC, the hot side of TEC is close to heat-dissipating aluminium plate, and heat-dissipating aluminium plate is arranged right below being exhaust fan；
Described temperature sensor one end contacts with semiconductor laser, the other end is connected with the input and output pin of single-chip microcomputer, pid algorithm is had in described single-chip microcomputer, the outfan of single-chip microcomputer is connected with one end of TEC digital PWM power driving circuit, and the other end of TEC digital PWM power driving circuit is connected with the TEC binding post of TEC radiating subassembly；
The circuit of described TEC digital PWM power driving circuit is constituted: the base stage of audion Q1 is connected with the outfan of single-chip microcomputer, this outfan of single-chip microcomputer is connected with power supply terminal VCC by resistance R2 simultaneously, the colelctor electrode of audion Q1 is connected with one end of one end of resistance R3, resistance R4 respectively, the other end of resistance R3 connects power supply terminal VCC, and the emitter stage of audion Q1 receives digitally GND；The other end of resistance R4 is connected with the base stage of audion Q2 and audion Q3 simultaneously, and the colelctor electrode of audion Q2 receives power supply terminal VCC by resistance R5, and the emitter stage of audion Q2 is connected with the emitter stage of audion Q3, and digitally GND received by the colelctor electrode of audion Q3；The emitter stage of audion Q2 and audion Q3 links the source electrode of metal-oxide-semiconductor Q4 jointly, and the grid of metal-oxide-semiconductor Q4 connects the negative pole of polar capacitor C4 and the negative pole of TEC binding post, and the positive pole of polar capacitor C4 is connected with the positive pole of power supply terminal VCC and TEC binding post respectively；Digitally GND is received in the drain electrode of metal-oxide-semiconductor Q4.
Compared with prior art, the invention has the beneficial effects as follows:
1) conventional laser adopts the TEC controller of linear model mostly, but power efficiency is low, control accuracy is not high, and circuit level is relatively low, and there is temperature controlled " dead band " problem.The present invention adopts TEC digital PWM power driving circuit to drive TEC, provides size accurate adjustable driving electric current for temperature control performer TEC, and relative to linear drive mode, power consumption is little, dispel the heat less, substantially increase power-efficient.And relative to adopting integrated temperature control chip MAX1978 to compare, greatly reduce cost.
2) present invention adopts the single wire digital formula temperature sensor chip DS18B20 of dallas, u.s.a (Dallas) company as temperature sensor, DS18B20 has the advantages such as microminiaturization, low-power consumption, high-performance, capacity of resisting disturbance be strong, directly dut temperature can be converted to serial digital signal, process for single-chip microcomputer；Eliminate process analogue signal corresponding for temperature being converted to the readable digital signal of microcontroller through A/D converter compared with critesistor, be so conducive to saving hardware costs, make system structure simpler.
3) in the present invention, single-chip microcomputer adopts the single-chip microcomputer STC12C5410AD of the single clock/machine cycle of macrocrystalline science and technology production, it it is high speed/low-power consumption/anti-interference strong a new generation 8051 single-chip microcomputer, instruction code completely compatible traditional 8051, but fast 8-12 times of speed, additionally contain 4 road PWM, for the invention provides the adjustable PWM output of dutycycle, eliminating loaded down with trivial details PWM and producing circuit.
4) owing to temperature control system has hysteresis quality, time variation and nonlinear feature, according to conventional linear control theory, satisfied control effect to be reached abnormal difficult.The present invention adopts pid algorithm to control the temperature of semiconductor laser, obtain controlling increment by increment type PID algorithm, control the dutycycle of PWM pulse width signal, and then control the break-make of field effect transistor, thus the electric current controlled on TEC, finally realize effective control of noise spectra of semiconductor lasers temperature.
Accompanying drawing explanation
Fig. 1 is the present invention overall structure block diagram based on a kind of embodiment of temperature control system of semiconductor laser of TEC；
Fig. 2 is the present invention peripheral circuit connection diagram based on the single-chip microcomputer 2 of a kind of embodiment of temperature control system of semiconductor laser of TEC；
Fig. 3 is the present invention circuit connection diagram based on a kind of embodiment temperature sensor 1 of temperature control system of semiconductor laser of TEC；
Fig. 4 is the present invention circuit connection diagram based on the TEC digital PWM power driving circuit 3 of a kind of embodiment of temperature control system of semiconductor laser of TEC；
Fig. 5 is the present invention structural representation based on the TEC radiating subassembly 4 of a kind of embodiment of temperature control system of semiconductor laser of TEC；
Fig. 6 is that the present invention is based on the flow chart of pid algorithm in the single-chip microcomputer of a kind of embodiment of temperature control system of semiconductor laser of TEC.
In figure, 1-temperature sensor, 2-single-chip microcomputer, 3-TEC digital PWM power driving circuit, 4-TEC radiating subassembly, 5-semiconductor laser, 44-TEC, 41-cold-making block, 42-heat-dissipating aluminium plate, 43-exhaust fan.
Detailed description of the invention
It is further described the present invention below in conjunction with embodiment and accompanying drawing, but not in this, as the restriction to the application claims.
The present invention (is called for short temperature control system based on the temperature control system of semiconductor laser of TEC, referring to Fig. 1-6) include temperature sensor 1, single-chip microcomputer 2, TEC digital PWM power driving circuit 3 and TEC radiating subassembly 4, described TEC radiating subassembly 4 (referring to Fig. 5) includes TEC44, cold-making block 41, heat-dissipating aluminium plate 42 and exhaust fan 43, the huyashi-chuuka (cold chinese-style noodles) of TEC44 and hot side are all evenly coated with heat-conducting silicone grease, cold-making block 41 is close to by the huyashi-chuuka (cold chinese-style noodles) of TEC44, the hot side of TEC44 is close to heat-dissipating aluminium plate 42, heat-dissipating aluminium plate 42 is arranged right below being exhaust fan 43, the heat that TEC produces will be disseminated by heat-dissipating aluminium plate and exhaust fan, refrigeration can be dramatically increased；
Described temperature sensor 1 one end contacts with semiconductor laser 5, the other end is connected with the input and output pin of single-chip microcomputer 2, the model of described single-chip microcomputer 2 is STC12C5410AD, pid algorithm is had in single-chip microcomputer, the outfan of single-chip microcomputer 2 is connected with one end of TEC digital PWM power driving circuit 3, and the other end of TEC digital PWM power driving circuit 3 is connected with the binding post of the TEC44 of TEC radiating subassembly 4；
The circuit of described TEC digital PWM power driving circuit 3 (referring to Fig. 4) is constituted: the base stage of audion Q1 is connected with the outfan P3.5 mouth of single-chip microcomputer 2, the P3.5 mouth of single-chip microcomputer produces PWM output, this outfan of single-chip microcomputer 2 is connected with power supply terminal VCC by resistance R2 simultaneously, P3.5 mouth is adopted weak pull-up, it is pulled upward to VCC, for the On current that the base stage offer of audion Q1 is bigger with the resistance R2 of 5.1K Ω；The colelctor electrode of audion Q1 is connected with one end of one end of resistance R3, resistance R4 respectively, and the other end of resistance R3 connects power supply terminal VCC, and the emitter stage of audion Q1 receives digitally GND；The other end of resistance R4 is connected with the base stage of audion Q2 and audion Q3 simultaneously, and the colelctor electrode of audion Q2 receives power supply terminal VCC by resistance R5, and the emitter stage of audion Q2 is connected with the emitter stage of audion Q3, and digitally GND received by the colelctor electrode of audion Q3；The emitter stage of audion Q2 and audion Q3 links the source electrode of metal-oxide-semiconductor (metal-oxide semiconductor fieldeffect transistor) Q4 jointly, the grid of metal-oxide-semiconductor Q4 connects the negative pole of polar capacitor C4 and the negative pole of TEC binding post, the positive pole of polar capacitor C4 is connected with the positive pole of power supply terminal VCC and TEC binding post respectively, TEC receives the two ends of polar capacitor C4, by controlling the break-make of metal-oxide-semiconductor Q4, thus controlling the refrigeration size of current of TEC；Digitally GND is received in the drain electrode of metal-oxide-semiconductor Q4.
Specifically, in the present invention, the model of audion Q1, audion Q2 and audion Q3 is 2N3904, the model of metal-oxide-semiconductor Q4 is 50N06, the resistance of resistance R2 is 5.1K Ω, the resistance of resistance R3 is 240 Ω, the resistance of resistance R4 is 1K Ω, and the resistance of resistance R5 is 240 Ω, and the specification of polar capacitor C4 is 4700uF/35V.
In temperature control system of the present invention, peripheral circuit composition (referring to Fig. 2) of single-chip microcomputer 2 is: single-chip microcomputer adopts the single-chip microcomputer STC12C5410AD of the single clock/machine cycle of macrocrystalline science and technology production, represent with U1, the reset RST pin of single-chip microcomputer connects the negative pole of polar capacitor C3, the positive pole of polar capacitor C3 meets power supply terminal VCC, the negative pole of electric capacity C3 receives digitally GND by resistance R1, so that single-chip microcomputer can produce to reset；The XTAL2 foot of single-chip microcomputer, XTAL1 foot are coupled with the two ends of crystal oscillator X1, and receive digitally respectively through electric capacity C1, electric capacity C2, are constituted crystal oscillating circuit with this, provide clock source for single-chip microcomputer；The GND foot of single-chip microcomputer is received digitally；The VDD foot of single-chip microcomputer receives power supply terminal VCC, powers for single-chip microcomputer；The PWM1/T1/P3.5 foot of single-chip microcomputer produces PWM output, connects TEC digital PWM power driving circuit 3；The holding wire of the input and output pin P2.6 mouth jointing temp sensor 1 of single-chip microcomputer.Wherein, the capacitance of electric capacity C1 and electric capacity C2 is 30pF, and the resistance of resistance R1 is 10K Ω, and crystal oscillator X1 is sized to 11.0592MHz, and the capacitance of polar capacitor C3 is 10uF/35V.
In temperature control system of the present invention, temperature sensor 1 adopts the single wire digital formula temperature sensor chip DS18B20 of dallas, u.s.a (Dallas) company, its circuit constitutes (referring to Fig. 3): temperature sensor 1 represents with U2, the GND foot of temperature sensor meets digitally GND, signal end DQ foot connects the input and output pin P2.6 mouth of single-chip microcomputer, the signal end DQ foot of DS18B20 receives power supply terminal VCC by resistance R6 simultaneously, and the VCC foot of temperature sensor receives power supply terminal VCC.Wherein, the resistance of resistance R6 is 4.7K Ω, by the programming of the input and output pin P2.6 mouth of single-chip microcomputer can be realized the data acquisition to temperature sensor.
The present invention based on the pid algorithm flow process (referring to Fig. 6) in single-chip microcomputer in the temperature control system of semiconductor laser of TEC is: first initialize the coefficient of PID: proportionality coefficient Pset, integral coefficient Iset, differential coefficient Dset, PID coefficient is preset；Then temperature sensor gathers the temperature of controlled device (semiconductor laser), and Extracting temperature gathers data Temptest from single-chip microcomputer, and by poor for temperature acquisition data Temptest and preset temperature Tset, obtain deviation Et, Et=Temptest-Tset, controlling increment Outvalue is calculated by increment type PID algorithm, controlling increment (output) is exported to PWM pulse width signal, control the dutycycle of PWM pulse width signal, and then control the temperature of controlled device by controlling TEC digital PWM power driving circuit；Additionally, output is exported to PWM pulse width signal, also to update deviation Et, prepare for subsequent time, and judge whether the sampling time reaches, if reaching, return step " Extracting temperature gathers data Temptest ", continuing cycling through；If not up to, wait the sampling time, continue to judge whether the sampling time reaches.
Wherein the formula of increment type PID algorithm is: Outvalue=Pset*Et+Iset* (Et-Et1)+Dset* (Et-2*Et1+Et2).Outvalue is the controlling increment calculated by increment type PID algorithm, Pset, Iset, Dset respectively proportionality coefficient, integral coefficient, differential coefficient, and Et is the deviation of this sampling, and Et1 is the deviation of last sampling, and Et2 is the sampling deviation of upper twice.
In the present invention, temperature sensor 1 gathers the temperature of semiconductor laser 5, and semiconductor laser 5 is controlled device, and the temperature signal gathered is sent into single-chip microcomputer 2 by temperature sensor；Single-chip microcomputer adopts pid algorithm to produce corresponding controlled quentity controlled variable, the adjustable PWM pulse width signal output of dutycycle is produced for TEC digital PWM power driving circuit 3, the heat that TEC digital PWM power driving circuit 3 produces is got rid of in time via TEC radiating subassembly 4, to reach better refrigeration.
The temperature control process of temperature control system of the present invention is: adopt TEC noise spectra of semiconductor lasers (LD) 5 to carry out freezing or heating, temperature sensor 1 gathers the temperature of semiconductor laser (LD), single-chip microcomputer 2 using sample temperature and the difference that arranges between temperature as input variable, adopt pid algorithm that it is calculated, produce corresponding controlling increment, controlling increment produces corresponding electric current via TEC digital PWM power driving circuit 3, drive TEC, noise spectra of semiconductor lasers (LD) 5 is heated or freezes, the temperature of semiconductor laser (LD) is again by temperature sensor feedback to single-chip microcomputer 2 simultaneously, thus adjusting the size of the output electric current of TEC digital PWM power driving circuit 3, until the temperature stabilization of semiconductor laser (LD) is at the temperature spot arranged.
Components and parts used in the present invention are all commercially available, do not address part and are applicable to prior art.
Claims (4)
1. the temperature control system of semiconductor laser based on TEC, it is characterized in that this temperature control system includes temperature sensor, single-chip microcomputer, TEC digital PWM power driving circuit and TEC radiating subassembly, described TEC radiating subassembly includes TEC, cold-making block, heat-dissipating aluminium plate and exhaust fan, the huyashi-chuuka (cold chinese-style noodles) of TEC and hot side are all evenly coated with heat-conducting silicone grease, cold-making block is close to by the huyashi-chuuka (cold chinese-style noodles) of TEC, the hot side of TEC is close to heat-dissipating aluminium plate, and heat-dissipating aluminium plate is arranged right below being exhaust fan；
Described temperature sensor one end contacts with semiconductor laser, the other end is connected with the input and output pin of single-chip microcomputer, pid algorithm is had in described single-chip microcomputer, the outfan of single-chip microcomputer is connected with one end of TEC digital PWM power driving circuit, and the other end of TEC digital PWM power driving circuit is connected with the TEC binding post of TEC radiating subassembly；
The circuit of described TEC digital PWM power driving circuit is constituted: the base stage of audion Q1 is connected with the outfan of single-chip microcomputer, this outfan of single-chip microcomputer is connected with power supply terminal VCC by resistance R2 simultaneously, the colelctor electrode of audion Q1 is connected with one end of one end of resistance R3, resistance R4 respectively, the other end of resistance R3 connects power supply terminal VCC, and the emitter stage of audion Q1 receives digitally GND；The other end of resistance R4 is connected with the base stage of audion Q2 and audion Q3 simultaneously, and the colelctor electrode of audion Q2 receives power supply terminal VCC by resistance R5, and the emitter stage of audion Q2 is connected with the emitter stage of audion Q3, and digitally GND received by the colelctor electrode of audion Q3；The emitter stage of audion Q2 and audion Q3 links the source electrode of metal-oxide-semiconductor Q4 jointly, and the grid of metal-oxide-semiconductor Q4 connects the negative pole of polar capacitor C4 and the negative pole of TEC binding post, and the positive pole of polar capacitor C4 is connected with the positive pole of power supply terminal VCC and TEC binding post respectively；Digitally GND is received in the drain electrode of metal-oxide-semiconductor Q4.
2. the temperature control system of semiconductor laser based on TEC according to claim 1, it is characterized in that the model of described audion Q1, audion Q2 and audion Q3 is 2N3904, the model of metal-oxide-semiconductor Q4 is 50N06, the resistance of resistance R2 is 5.1K Ω, the resistance of resistance R3 is 240 Ω, the resistance of resistance R4 is 1K Ω, and the resistance of resistance R5 is 240 Ω, and the specification of polar capacitor C4 is 4700uF/35V.
3. the temperature control system of semiconductor laser based on TEC according to claim 1, it is characterized in that described temperature sensor adopts the single wire digital formula temperature sensor chip DS18B20 of dallas, u.s.a company, the model of described single-chip microcomputer is STC12C5410AD.
4. according to claim 1 in the temperature control system of semiconductor laser of TEC, it is characterized in that the flow process of the pid algorithm in described single-chip microcomputer is: first initialize the coefficient of PID: proportionality coefficient Pset, integral coefficient Iset, differential coefficient Dset, PID coefficient is preset；Then temperature sensor gathers the temperature of controlled device, and Extracting temperature gathers data Temptest from single-chip microcomputer, and by poor for temperature acquisition data Temptest and preset temperature Tset, obtain deviation Et, controlling increment Outvalue is calculated by increment type PID algorithm, controlling increment is exported to PWM pulse width signal, control the dutycycle of PWM pulse width signal, and then control the temperature of controlled device by controlling TEC digital PWM power driving circuit；Additionally, output is exported to PWM pulse width signal, also to update deviation Et, prepare for subsequent time, and judge whether the sampling time reaches, if reaching, return step " Extracting temperature gathers data Temptest ", continuing cycling through；If not up to, wait the sampling time, continue to judge whether the sampling time reaches.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106539621A (en) * | 2016-10-30 | 2017-03-29 | 苏州市克拉思科文化传播有限公司 | A kind of intelligent operation laser scalpel |
| CN106619102A (en) * | 2017-01-24 | 2017-05-10 | 河北亿方医疗器械有限公司 | Intelligent moxibustion apparatus with Bluetooth control and control method thereof |
| CN106873663A (en) * | 2017-01-22 | 2017-06-20 | 中国电子科技集团公司第十研究所 | A kind of temprature control method and system |
| CN110442164A (en) * | 2019-08-19 | 2019-11-12 | 深圳市思榕科技有限公司 | A kind of stationary temperature heating chill surface control method |
| CN111474967A (en) * | 2020-04-29 | 2020-07-31 | 苏州东方克洛托光电技术有限公司 | Dynamic temperature control device for improving environmental adaptability of digital micromirror |
| CN114265448A (en) * | 2022-01-13 | 2022-04-01 | 广东亿嘉和科技有限公司 | Electronic component with constant surface temperature |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106539621A (en) * | 2016-10-30 | 2017-03-29 | 苏州市克拉思科文化传播有限公司 | A kind of intelligent operation laser scalpel |
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| CN106873663A (en) * | 2017-01-22 | 2017-06-20 | 中国电子科技集团公司第十研究所 | A kind of temprature control method and system |
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| CN106619102A (en) * | 2017-01-24 | 2017-05-10 | 河北亿方医疗器械有限公司 | Intelligent moxibustion apparatus with Bluetooth control and control method thereof |
| CN110442164A (en) * | 2019-08-19 | 2019-11-12 | 深圳市思榕科技有限公司 | A kind of stationary temperature heating chill surface control method |
| CN111474967A (en) * | 2020-04-29 | 2020-07-31 | 苏州东方克洛托光电技术有限公司 | Dynamic temperature control device for improving environmental adaptability of digital micromirror |
| CN114265448A (en) * | 2022-01-13 | 2022-04-01 | 广东亿嘉和科技有限公司 | Electronic component with constant surface temperature |
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Application publication date: 20160720 |
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