CN105779956A - 一种两步法制备有机钙钛矿甲基胺基碘化铅薄膜的方法 - Google Patents

一种两步法制备有机钙钛矿甲基胺基碘化铅薄膜的方法 Download PDF

Info

Publication number
CN105779956A
CN105779956A CN201610160754.2A CN201610160754A CN105779956A CN 105779956 A CN105779956 A CN 105779956A CN 201610160754 A CN201610160754 A CN 201610160754A CN 105779956 A CN105779956 A CN 105779956A
Authority
CN
China
Prior art keywords
lead iodide
film
titanium ore
calcium titanium
organic calcium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201610160754.2A
Other languages
English (en)
Other versions
CN105779956B (zh
Inventor
徐庆宇
朱凯
张昊
范奇
董帅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Southeast University
Original Assignee
Southeast University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Southeast University filed Critical Southeast University
Priority to CN201610160754.2A priority Critical patent/CN105779956B/zh
Publication of CN105779956A publication Critical patent/CN105779956A/zh
Application granted granted Critical
Publication of CN105779956B publication Critical patent/CN105779956B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0694Halides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/28Vacuum evaporation by wave energy or particle radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明阐述了一种两步法制备有机钙钛矿甲基胺基碘化铅薄膜的方法。具体步骤为:利用薄膜制备技术(脉冲激光沉积、磁控溅射等),以碘化铅为靶材,在基底上沉积制备碘化铅薄膜,通过激光脉冲数或者溅射功率和时间控制薄膜厚度,再将长好的碘化铅薄膜与甲基碘化胺粉末放入控温炉中,150~280摄氏度恒温加热5分钟到5小时,让甲基碘化胺气氛与衬底上的碘化铅薄膜进行反应生成甲基胺基碘化铅薄膜。本发明制备工艺简单,可以实现大面积薄膜的制备,并且利用该方法生长的薄膜晶粒基本贯穿薄膜生长方向,有利于有机钙钛矿太阳能电池效率的提高和工业化生产与应用。

Description

一种两步法制备有机钙钛矿甲基胺基碘化铅薄膜的方法
技术领域
本发明是一种有机钙钛矿甲基胺基碘化铅薄膜的方法,尤其是一种两步法制备有机钙钛矿甲基胺基碘化铅薄膜的方法,属于技术领域。
背景技术
甲基胺基碘化铅有机钙钛矿晶型(ABX3)的有机碘化物吸光材料,ABX3结构中,A为甲基胺基(CH3NH3),B为金属铅原子,X为碘。一般的制备方法有甲基胺基碘化铅一步旋涂法,气相蒸发法,两步旋涂法,两步气相蒸发法和一步PLD法等,但制备尺寸均一的大颗粒有机钙钛矿薄膜往往比较难以控制,并且大多都不适合大面积薄膜的制备以应用于工业生产和实际应用。
发明内容
技术问题:本发明的目的是提供一种简单可控的制备大晶粒有机钙钛矿甲基胺基碘化铅薄膜的方法。该方法有利于大面积有机钙钛矿甲基胺基碘化铅薄膜的制备。工艺简单,可应用于大面积有机钙钛矿太阳能电池的工业化生产和实际应用。
技术方案:本发明的一种两步法制备有机钙钛矿甲基胺基碘化铅薄膜的方法包括以下步骤:
1.)制备碘化铅靶材:通过薄膜制备工艺,在真空条件下,衬底上制备碘化铅薄膜;
2.)碘化铅薄膜与甲基碘化胺粉末放置在耐高温容器中,一起放入控温炉中加热到150摄氏度到280摄氏度,保温5分钟到5小时,碘化铅与甲基碘化胺气氛反应生成有机钙钛矿甲基胺基碘化铅薄膜样品;
3.)自然降温后将薄膜样品取出,得到有机钙钛矿甲基胺基碘化铅薄膜。
其中:
所述的步骤1.)薄膜制备工艺为脉冲激光沉积或磁控溅射。
步骤1)所述真空条件是腔体内压强<10-1帕。
步骤2)所述耐高温容器为陶瓷或玻璃。
步骤2)所述控温炉为管式炉、干燥箱或箱式炉。
有益效果:
(1)利用薄膜制备工艺生长碘化铅薄膜,有利于大面积有机钙钛矿甲基胺基碘化铅薄膜的制备。
(2)在碘化钾铵气氛下反应,可以提高制备温度,促进晶粒的长大,从而得到单个晶粒贯穿薄膜整个厚度的薄膜样品。
(3)本工艺简单,可应用于大面积有机钙钛矿太阳能电池的工业化生产和实际应用。
附图说明
图1制备的碘化铅薄膜截面的SEM照片。
图2制备的有机钙钛矿甲基胺基碘化铅薄膜的XRD图。
图3制备的有机钙钛矿甲基胺基碘化铅薄膜截面的SEM照片。
具体实施方式
实施案例一:
用脉冲激光沉积技术,腔体真空度10-3帕,激光能量400毫焦,脉冲数1000脉冲,利用碘化铅为靶材在掺氟二氧化锡薄膜上生长碘化铅薄膜,薄膜厚度约为1.6微米(图1),将长好的碘化铅与甲基碘化胺粉末放入管式炉中180摄氏度恒温加热20分钟,让甲基碘化胺气氛与衬底上的碘化铅薄膜进行反应生成甲胺基碘化铅薄膜,利用X射线衍射确定该方法生长的薄膜为纯相的有机钙钛矿甲基胺基碘化铅薄膜(图2),利用扫描电子显微镜观测截面确定薄膜厚度约为3微米,晶粒很大,基本贯穿整个薄膜的厚度(图3)。
实施案例二:
用磁控溅射技术,腔体真空度10-3帕,溅射功率150瓦,生长时间20分钟,利用碘化铅为靶材在掺氟二氧化锡薄膜上生长碘化铅薄膜,薄膜厚度500纳米,将长好的碘化铅与甲基碘化胺粉末放入管式炉中180摄氏度恒温加热15分钟,让甲基碘化胺气氛与衬底上的碘化铅薄膜进行反应生成有机钙钛矿甲基胺基碘化铅薄膜。
本发明提供了一种简单的有机钙钛矿甲基胺基碘化铅薄膜制备方法的思路及实施方法,具体应用途径很多,以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以作出若干改进,例如通过不同的薄膜制备工艺生长碘化铅薄膜,在不同的衬底上生长薄膜等,这些改进也应视为本发明的保护范围。

Claims (5)

1.一种两步法制备有机钙钛矿甲基胺基碘化铅薄膜的方法,其特征在于该方法包括以下步骤:
1.)制备碘化铅靶材:通过薄膜制备工艺,在真空条件下,衬底上制备碘化铅薄膜;
2.)碘化铅薄膜与甲基碘化胺粉末放置在耐高温容器中,一起放入控温炉中加热到150摄氏度到280摄氏度,保温5分钟到5小时,碘化铅与甲基碘化胺气氛反应生成有机钙钛矿甲基胺基碘化铅薄膜样品;
3.)自然降温后将薄膜样品取出,得到有机钙钛矿甲基胺基碘化铅薄膜。
2.据权利要求1所述的两步法制备有机钙钛矿甲基胺基碘化铅薄膜的方法,其特征在于所述的步骤1.)薄膜制备工艺为脉冲激光沉积或磁控溅射。
3.据权利要求1所述的两步法制备有机钙钛矿甲基胺基碘化铅薄膜的方法,其特征在于步骤1)所述真空条件是腔体内压强<10-1帕。
4.据权利要求1所述的两步法制备有机钙钛矿甲基胺基碘化铅薄膜的方法,其特征在于步骤2)所述耐高温容器为陶瓷或玻璃。
5.据权利要求1所述的两步法制备有机钙钛矿甲基胺基碘化铅薄膜的方法,其特征在于步骤2)所述控温炉为管式炉、干燥箱或箱式炉。
CN201610160754.2A 2016-03-21 2016-03-21 一种两步法制备有机钙钛矿甲基胺基碘化铅薄膜的方法 Active CN105779956B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610160754.2A CN105779956B (zh) 2016-03-21 2016-03-21 一种两步法制备有机钙钛矿甲基胺基碘化铅薄膜的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610160754.2A CN105779956B (zh) 2016-03-21 2016-03-21 一种两步法制备有机钙钛矿甲基胺基碘化铅薄膜的方法

Publications (2)

Publication Number Publication Date
CN105779956A true CN105779956A (zh) 2016-07-20
CN105779956B CN105779956B (zh) 2018-02-02

Family

ID=56393091

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610160754.2A Active CN105779956B (zh) 2016-03-21 2016-03-21 一种两步法制备有机钙钛矿甲基胺基碘化铅薄膜的方法

Country Status (1)

Country Link
CN (1) CN105779956B (zh)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106854749A (zh) * 2016-12-02 2017-06-16 广州光鼎科技有限公司 一种钙钛矿材料及其相关薄膜的制备方法
CN110565054A (zh) * 2019-09-12 2019-12-13 东南大学 一种激光两步溅射制备CsPbBrxI3-x荧光薄膜的方法
CN110767808A (zh) * 2018-07-27 2020-02-07 中国科学院化学研究所 钙钛矿薄膜及其制备方法和应用
WO2020214994A1 (en) 2019-04-19 2020-10-22 Hunt Perovskite Technologies, L.L.C. Method for solvent-free perovskite deposition
CN112002812A (zh) * 2020-09-15 2020-11-27 常州大学 基于分步热蒸发制备钙钛矿太阳电池吸收层的方法及钙钛矿太阳电池的制备
CN112687804A (zh) * 2020-12-25 2021-04-20 昆山协鑫光电材料有限公司 基于两步法制备大面积钙钛矿薄膜的方法及其应用
TWI836830B (zh) * 2022-12-30 2024-03-21 國立清華大學 鈣鈦礦薄膜的製作方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02173222A (ja) * 1988-12-27 1990-07-04 Toshiba Corp 高純度多元合金製造装置
US5871579A (en) * 1997-09-25 1999-02-16 International Business Machines Corporation Two-step dipping technique for the preparation of organic-inorganic perovskite thin films

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02173222A (ja) * 1988-12-27 1990-07-04 Toshiba Corp 高純度多元合金製造装置
US5871579A (en) * 1997-09-25 1999-02-16 International Business Machines Corporation Two-step dipping technique for the preparation of organic-inorganic perovskite thin films

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DONG YANG ET.AL: ""Alternating precursor layer deposition for highly stable perovskite films towards efficient solar cells using vacuum deposition"", 《JOURNAL MATERIALS CHEMISTRY A》 *

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106854749A (zh) * 2016-12-02 2017-06-16 广州光鼎科技有限公司 一种钙钛矿材料及其相关薄膜的制备方法
CN106854749B (zh) * 2016-12-02 2018-12-11 广州光鼎科技集团有限公司 一种钙钛矿材料及其相关薄膜的制备方法
CN110767808A (zh) * 2018-07-27 2020-02-07 中国科学院化学研究所 钙钛矿薄膜及其制备方法和应用
CN110767808B (zh) * 2018-07-27 2021-05-25 中国科学院化学研究所 钙钛矿薄膜及其制备方法和应用
WO2020214994A1 (en) 2019-04-19 2020-10-22 Hunt Perovskite Technologies, L.L.C. Method for solvent-free perovskite deposition
CN110565054A (zh) * 2019-09-12 2019-12-13 东南大学 一种激光两步溅射制备CsPbBrxI3-x荧光薄膜的方法
CN110565054B (zh) * 2019-09-12 2021-04-27 东南大学 一种激光两步溅射制备CsPbBrxI3-x荧光薄膜的方法
CN112002812A (zh) * 2020-09-15 2020-11-27 常州大学 基于分步热蒸发制备钙钛矿太阳电池吸收层的方法及钙钛矿太阳电池的制备
CN112002812B (zh) * 2020-09-15 2023-06-30 常州大学 基于分步热蒸发制备钙钛矿太阳电池吸收层的方法及钙钛矿太阳电池的制备
CN112687804A (zh) * 2020-12-25 2021-04-20 昆山协鑫光电材料有限公司 基于两步法制备大面积钙钛矿薄膜的方法及其应用
TWI836830B (zh) * 2022-12-30 2024-03-21 國立清華大學 鈣鈦礦薄膜的製作方法

Also Published As

Publication number Publication date
CN105779956B (zh) 2018-02-02

Similar Documents

Publication Publication Date Title
CN105779956B (zh) 一种两步法制备有机钙钛矿甲基胺基碘化铅薄膜的方法
CN105777800B (zh) 氧化铅薄膜制备有机钙钛矿甲基胺基碘化铅薄膜的方法
CN104485425B (zh) 钙钛矿型材料制备方法和设备及其光伏器件的加工方法
WO2019218567A1 (zh) 一种有机铵金属卤化物薄膜的制备装置及制备和表征方法
CN107287578B (zh) 一种大范围均匀双层二硫化钼薄膜的化学气相沉积制备方法
CN108400244A (zh) 一种基于无铅双钙钛矿薄膜的深紫外光探测器及制备方法
CN109652762B (zh) 一种锑硫硒合金薄膜的制备方法
CN114086126B (zh) 一种单晶太阳能电池薄膜材料及其制备方法
Wang et al. Control growth of catalyst-free high-quality ZnO nanowire arrays on transparent quartz glass substrate by chemical vapor deposition
CN110699745A (zh) 一种钙钛矿单晶的制备方法
CN103205706A (zh) 一种立方结构MgZnO薄膜的制备方法
CN107805779B (zh) 一种激光溅射法制备CsPbBr3薄膜的方法
CN103824902A (zh) 一种FeS2薄膜及其制备方法
CN111020487A (zh) 一种取向可控的准一维结构材料的薄膜制备方法
CN103572234A (zh) 一种(006)择优取向γ-In2Se3薄膜的制备方法
CN105671486B (zh) 一种氮掺杂二氧化钛薄膜材料的制备方法
CN105097989A (zh) 一种制备硫化锌光电薄膜的方法
CN100368601C (zh) 多元金属无机硫族化合物的高压釜合成方法
CN104505462A (zh) 一种有机金属卤化物薄膜及其制备方法与应用
CN104790032A (zh) 激光脉冲溅射沉积制备多晶硅薄膜的方法
CN108588713A (zh) 一种二维磷化钼薄膜的制备方法
JP6008282B2 (ja) Geクラスレートの製造方法
CN113279063A (zh) 一种ⅳ-ⅵ族红外半导体薄膜及其制备方法
CN103981497A (zh) 一种柔性衬底ZnS薄膜的制备方法
Jang et al. Effect of ALD surface treatment on structural and optical properties of ZnO nanorods

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant