CN105764253B - 具有高频和低频基板的电路板组件 - Google Patents

具有高频和低频基板的电路板组件 Download PDF

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CN105764253B
CN105764253B CN201511028370.7A CN201511028370A CN105764253B CN 105764253 B CN105764253 B CN 105764253B CN 201511028370 A CN201511028370 A CN 201511028370A CN 105764253 B CN105764253 B CN 105764253B
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D·W·齐默尔曼
J·F·瑟西
C·I·德尔黑莫
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Aptiv Technologies Ltd
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Abstract

公开了一种具有高频和低频基板的电路板组件。电路板组件(10)，包括低频(LF)基板、单片微波集成电路(MMIC(22))、电部件(26)、高频(HF)基板和天线(46)。该LF基板(12)由FR‑4型材料形成。该LF基板(12)限定了穿过所述LF基板(12)的波导(18)。该MMIC(22)附连到该LF基板(12)的顶侧(14)并且输出射频信号(20)。该电部件(26)电附连到该LF基板(12)。该HF基板30被焊接至该LF基板(12)的顶侧。穿过该HF基板(30)的开口(38)围绕该MMIC(22)。垂直转换(44)将由该MMIC(22)输出的射频信号(20)引导至该波导(18)。多个引线接合(40)将该MMIC(22)电连接至该HF基板(30)并且将该射频信号(20)从该MMIC(22)耦合到该垂直转换(44)。该天线(46)附连到该LF基板(12)并且被配置为辐射来自波导(18)的射频信号(20)。

Description

具有高频和低频基板的电路板组件
技术领域
本公开一般地涉及电路板组件，并且更具体地涉及用于发射和/或接收射频信号的基板、电设备和天线的成本效率相互关系。
背景技术
已知在诸如汽车雷达***之类的成本敏感的毫米波长产品的电路板组件中包括单片微波集成电路(MMIC)。诸如四方扁平无引线(QFN)封装之类的标准封装对于毫米波设备来说不是优选的，因为这种封装不向RF接口提供合适的性能。高频基板通常比低频(例如FR-4)基板更加昂贵，因此仅使用高频基板构建整个电路板组件不期望地增加成本。然而，针对MMIC的封装解决方案需要射频(RF)信号经由合适的基板接口的高效传输；以及必要的低频信号以用于供电、控制信号和基带接口。
发明内容
根据一个实施例，提供了一种电路板组件。该电路板组件包括低频(LF)基板、单片微波集成电路(MMIC)、多个电部件、高频(HF)基板、多个引线接合和天线。LF基板由FR-4型材料形成。LF基板限定了顶侧、底侧和穿过LF基板的波导，该波导被配置为将射频信号从顶侧引导到底侧。MMIC被附连到顶侧且被配置为输出射频信号。多个电部件电附连到LF基板且被配置为处理低频信号。HF基板附连到顶侧。HF基板被配置为限定焊垫(solder pad)，该焊垫被配置为将低频信号从LF基板耦合到HF基板。HF基板还被配置有贯穿HF基板的开口，该开口被配置为围绕MMIC。HF基板还被配置有垂直转换，该垂直转换被配置为将MMIC所输出的射频信号引导至波导。多个引线接合将MMIC电连接至HF基板并将射频信号从MMIC耦合至垂直转换。天线附连到LF基板且被配置为辐射来自波导的射频信号。
在阅读优选实施例的下列详细描述后，进一步的特征和优势将更清楚地呈现出，这些优选实施例仅作为非限定性的示例且结合附图而给出。
附图说明
现在将参考附图借助示例来描述本发明，其中：
图1是根据一个实施例的电路板组件的等距视图；以及
图2A，2B和2C是根据一个实施例的图1的组件从不同透视视角的分解视图。
具体实施方式
本文描述了一种电路板组件，该电路板组件提供了经济的组件以用于具有或处理频谱小于100MHz的相对低频信号(包括DC电力)和频谱大于1GHz的相对高频信号(即射频信号)两者的电***。作为示例而非限制，本文描述的电路板组件良好地适用于以76.5GHz的雷达信号频率运行的汽车雷达***。尽管文本中呈现的描述总地针对射频信号的传送，但要认识到，本教导可应用于仅接收射频信号的电路板组件以及同时发送和接收射频信号的电路板组件，如将用于雷达***的情况。
图1、2A、2B和2C合作地示出了电路板组件(下文称为组件10)的非限制性示例。组件10通常被构建在低频基板(下文中的LF基板12)上或周围。LF基板12由FR-4型材料有利地制成，因为它在成本上较低且容易获得。LF基板限定了顶侧14，底侧16和穿过LF基板12的波导18，该波导18被配置为将射频信号20(图2A)从顶侧14引导到底侧16。波导18可以以类似于电镀通孔的方式来电镀以使射频信号20更好地传导或传播穿过LF基板。
组件10包括单片微波集成电路，下文中的MMIC 22，其附连到顶侧14并且被配置为输出射频信号20。下文描述的附加特征使射频信号20从MMIC 22传导或传播到波导18。如果MMIC产生过多的热量，那么LF基板12可被配置为包括靠近(例如，在下面)MMIC 22的热沉24以更好地消散由MMIC 22发出的热。在LF基板12中，热沉24可包括一个或者多个通道或电镀通孔和/或一层或多层导体(诸如铜箔)，它们合作以远离MMIC 22传播和/或传导热量。可通过焊接或粘合剂32将MMIC 22附连到LF基板12。如果需要热沉24，则粘合剂32可以是例如导热环氧树脂。
组件10包括电附连到LF基板12的多个电部件26。通常，电部件26被配置为路由(route)、传导和/或处理低频信号28。电部件可包括电容器、电阻器或者诸如微处理器之类的处理器。如上所提出的，低频信号28通常低于100MHz，因为用于形成LF基板12的FR-4材料无法良好地适用于诸如射频信号20之类的较高频信号。
为了将射频信号20从MMIC 22路由到波导18，组件10包括高频基板，下文中的HF基板30，该HF基板30附连到LF基板12的顶侧14。用于HF基板30的适当材料是由Rogers公司制造的0.5mm厚RO5880。HF基板30被配置为限定焊垫34(图2B)，该焊垫34用来将低频信号28从LF基板12上的相应焊垫36(图2A)耦合到HF基板30。以这种方式，可从较低成本的FR-4基板(即LF基板12)为MMIC 22提供DC电力和控制信号，。
HF基板30可包括或限定穿过HF基板30的开口38，该开口38围绕MMIC 22。多个引线接合40随后可被用于将MMIC 22电连接至HF基板30并且因此将射频信号20从MMIC 22耦合到HF基板30上的微波传输带42。通过将MMIC 22放置在开口38内，引线接合40的长度可被最小化，这对于诸如射频信号20之类的高频信号是有益的。优选地，构成组件10的各种零件的厚度使得MMIC22上的引线接合垫与HF基板30上的引线接合垫共面或尽可能地接近共面，如此引线接合40的长度被最小化。
HF基板30可包括或者限定垂直转换44，其被配置为将由MMIC 22输出的射频信号20引导至波导18。如将被本领域技术人员认识到，垂直转换44对在HF基板30的表面上水平传播的射频信号20重新定向以穿过波导18在垂直方向上传播并且传播至附连到LF基板12的底侧16的天线46。通常，天线46被配置为辐射来自波导18的射频信号20。尽管至此的解释已针对由MMIC 22输出的且由天线46辐射的射频信号20，但预期信号可由天线46接收并由MMIC检测，如将是用于使用本文描述的组件10的雷达***的情况。
HF基板30的焊垫34、LF基板12的焊垫36和焊接材料48合作以形成焊接点50以将HF基板30与LF基板12附连并且由此提供了在HF基板30与LF基板12之间耦合低频信号28的方式。优选地，焊接点50具有一厚度，该厚度被选择成优化射频信号30在垂直转换44与波导18之间的耦合，但仍然提供适当的强度。通常，焊接点50越薄，射频信号20的耦合越好。然而，如果焊接点50过薄，焊接点可能具有差的可靠性。借助示例而非限制，回流(reflow)之后的焊接材料48的适当厚度是五十微米(50μm)。
天线46可包括通过粘合剂54附连到底侧16的支撑基板52。如果天线46的工作频率是76.5GHz，那么支撑基板52可以是0.38毫米(mm)厚的PTFE基板。天线46的元件56可具有1.07mm2的贴片尺寸和2.98mm的贴片间距。粘合剂54的适当材料是具有五十微米(50μm)的适当厚度的硅基粘合剂。
因此，提供了一种适用于诸如汽车雷达***之类的应用的电路板组件(组件10)。组件10使用适于表面安装附连到LF基板12的小RF基板(HF基板30)。低频信号28通过焊接点50经由基板的附连而互连。通过小外形焊接连接提供了从HF基板30至LF基板的转换的增强性能，当与典型BGA封装技术相比，该小外形焊接连接相对较小。组件10实现了利用低频和高频互连将MMIC封装到普通的FR4基板，FR4基板一般不适用于有效的高频微波传输带/带状线发送。随着商业产品日益增长地使用单片微波集成电路(MMIC)，本文描述的组件10特别有用以支持同时需要低频和高频RF接口的毫米波产品。对于毫米波设备，标准封装(例如，QFN)通常不是高效的，因为其不向质量RF接口提供合适的性能。用于MMIC的封装解决方案需要经由合适的基板接口有效地传递RF信号的能力；以及用于电力、控制和基带接口的必要的低频信号。然而，合适的高频基板材料通常显著地比标准的(即，低频)基板材料更加昂贵，导致了最小化使用面积的强烈商业激励。
尽管已针对其优选实施例对本发明进行了描述，然而本发明不旨在如此限制，而是仅受所附权利要求书中给出的范围限制。

Claims (6)

1.一种电路板组件(10)，包含：
低频(LF)基板，由FR-4型材料形成，其中所述LF基板(12)限定了顶侧(14)、底侧(16)和穿过所述LF基板(12)的波导(18)，所述波导(18)被配置为将射频信号(20)从所述顶侧(14)引导至所述底侧(16)；
单片微波集成电路(MMIC(22))，附连到所述顶侧(14)且配置为输出所述射频信号(20)；
多个电部件(26)，电附连到所述LF基板(12)且配置为处理低频信号(28)；
高频(HF)基板，附连到所述顶侧(14)，其中所述HF基板(30)被配置为限定焊垫(34)，所述焊垫(34)被配置为将所述低频信号(28)从所述LF基板(12)耦合到所述HF基板(30)；穿过所述HF基板(30)的开口(38)被配置成围绕所述MMIC(22)；以及垂直转换(44)被配置为将由所述MMIC(22)输出的所述射频信号(20)引导至所述波导(18)；
多个引线接合(40)，将所述MMIC(22)电连接至所述HF基板(30)且将所述射频信号(20)从所述MMIC(22)耦合到所述垂直转换(44)；以及
天线(46)，附连到所述LF基板(12)且配置为辐射来自波导(18)的射频信号(20)。
2.如权利要求1所述的组件(10)，其特征在于，所述MMIC(22)上的引线接合垫与所述HF基板(30)上的引线接合垫共面。
3.如权利要求1所述的组件(10)，其特征在于，所述HF基板(30)的焊垫(34)是焊接点(50)的一部分，所述焊接点(50)将所述HF基板(30)与所述LF基板(12)附连且在其间耦合所述低频信号(28)。
4.如权利要求3所述的组件(10)，其特征在于，所述焊接点(50)具有一厚度，所述厚度被选择成优化所述射频信号在所述垂直转换(44)与所述波导(18)之间的耦合。
5.如权利要求1所述的组件(10)，其特征在于，所述LF基板(12)包括靠近所述MMIC(22)的热沉(24)，所述热沉(24)被配置为消散由所述MMIC(22)发出的热量。
6.如权利要求1所述的组件(10)，其特征在于，所述天线(46)包括支撑基板(52)，所述支撑基板(52)通过粘合剂(32)附连到所述底侧(16)。
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