CN105762241A - Manufacturing method for epitaxial structure of enhanced injection type light-emitting diode - Google Patents

Manufacturing method for epitaxial structure of enhanced injection type light-emitting diode Download PDF

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Publication number
CN105762241A
CN105762241A CN201610273688.XA CN201610273688A CN105762241A CN 105762241 A CN105762241 A CN 105762241A CN 201610273688 A CN201610273688 A CN 201610273688A CN 105762241 A CN105762241 A CN 105762241A
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layer
gan
type groove
emitting diode
epitaxial structure
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CN201610273688.XA
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Inventor
汪洋
林志伟
陈凯轩
张永
姜伟
童吉楚
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Xiamen Changelight Co Ltd
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Xiamen Changelight Co Ltd
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Priority to CN201610273688.XA priority Critical patent/CN105762241A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The invention discloses a manufacturing method for an epitaxial structure of an enhanced injection type light-emitting diode. The manufacturing method comprises: step one, at least one U/N-GaN single-crystal film grows on a substrate surface and a penetrating dislocation unit grows on the U/N-GaN single-crystal film; step two, a stress releasing layer grows on the U/N-GaN single-crystal film and a V-shaped groove is formed in the stress releasing layer; step three, a multi-quantum well active layer grows on the stress releasing layer having the V-shaped groove; step four, a P-AlGaN layer grows on the active layer; step five, annealing baking and removing of the multi-quantum well active layer on the part of or the overall V-shaped groove inclined surface is carried out at a N2/H2/NH3 mixed gas atmosphere; step six, a U-GaN layer grows to cover the V-shaped groove inclined surface and extends to the P-AlGaN layer; and step seven, a P-GaN layer grows to fill the V-shaped groove and covers the U-GaN layer extending to the P-AlGaN layer surface. According to the invention, effective injection of a hole can be increased; and the light emitting efficiency of the light-emitting diode can be improved.

Description

A kind of epitaxial structure manufacture method of the light emitting diode strengthening injection type
Technical field
The present invention relates to LED technology field, refer in particular to the extension of a kind of light emitting diode strengthening injection type Construction manufacturing method.
Background technology
Compared with conventional light source, the advantages such as LED has life-span length, light efficiency is high, low in energy consumption, volume is little and the most integrated, The applications such as outdoor display, Landscape Lighting, television backlight and room lighting gradually replace conventional light source becomes main flow.
In prior art, the white light LED chip of more than 90% is all extension GaN base plural layers on a sapphire substrate Structure, its final luminous efficiency=carrier injection efficiency (IE) × internal quantum efficiency (IQE) × light extraction efficiency (EE).Due to P In type GaN, the activation efficiency of Mg doping is the lowest, and effective hole concentration only has 1-5E17/cm3, far below Si doping in N-type GaN Activation efficiency and effective electron concentration 5E18/cm3-2E19/cm3, therefore the injection efficiency in hole is a big bottle of luminous efficiency Neck.Owing to hole injection efficiency is lower than electronics, easily cause electronics to overflow (Overflow), generally show as Main luminous near 1-2 SQW (QW) contribution of p-type GaN, other SQW is the most luminous or luminescence is the most weak, such as Fig. 1 institute Showing, prior art hole and electronics flowing and compound epitaxial structure schematic diagram, wherein, " star " represents that electron-hole recombinations is sent out Light, " arrow " represents current/electric field direction, "+" it is P-GaN, "-" is N-GaN.
In view of this, in order to improve LED luminous efficiency, increase being efficiently injected into of hole, reduce the cost of manufacture of chip, this Case thus produces.
Summary of the invention
It is an object of the invention to provide the epitaxial structure manufacture method of a kind of light emitting diode strengthening injection type, to increase Add being efficiently injected into of hole, improve the luminous efficiency of light emitting diode.
For reaching above-mentioned purpose, the solution of the present invention is:
The epitaxial structure manufacture method of a kind of light emitting diode strengthening injection type, comprises the following steps:
One, grow at least one of which U/N-GaN monocrystal thin films at substrate surface, generate in U/N-GaN monocrystal thin films and longitudinally penetrate Dislocation；
Two, growth stress releasing layer on U/N-GaN monocrystal thin films, and in stress release layer, form V-type groove, V-type groove It is positioned at directly over threading dislocation, threading dislocation two-dimensional growth face enlarged openings is formed；
Three, the stress release layer with V-type groove grows multiple quantum well active layer, and on active layer, extends holding V-type Groove shapes, and the area of continuous enlargement V-type groove on horizontal growth face；
Four, active layer grows P-AlGaN layer, and on P-AlGaN layer, extends holding V-type groove；
Five, at N2/H2/NH3Annealing in mixed gas atmosphere, it is active to bake the MQW on part or all of V-type groove inclined-plane Layer；
Six, grow one layer of U-GaN cover layer and on V-type groove inclined-plane and extend to P-AlGaN layer surface；
Seven, V-type groove is filled and led up and is covered on the U-GaN extending to P-AlGaN layer surface by growth P-GaN.
Described stress release layer is monolayer, multilamellar, superlattices or the multi-quantum pit structure of AlxInyGa (1-x-y) N, wherein 0≤x, y≤1, the thickness 0-1um of each layer.
Described V-type slot opening size 0-1um, degree of depth 0-1um.
Described multiple quantum well active layer is monolayer, multilamellar, superlattices or the multi-quantum pit structure of AlxInyGa (1-x-y) N, Wherein 0≤x, y≤1, the thickness 0-1um of each layer.
The thickness of described U-GaN cover layer is 0-100nm.
Described P-GaN is monolayer, multilamellar, superlattices or the multi-quantum pit structure of p-type AlxInyGa (1-x-y) N, wherein 0 < =x, y≤1, the thickness 0-1um of each layer.
Described substrate comprises Al2O3, SiC, Si or GaN.
Described N2/H2/NH3Each weight percentages of components of mixed gas is a, b, c, wherein 0 < a, b < 100%, c < 100%, Described annealing temperature is less than 1200 DEG C higher than 700 DEG C.
The epitaxial structure of a kind of light emitting diode strengthening injection type, at Grown at least one of which U/N-GaN monocrystalline Thin film, generates longitudinal threading dislocation, growth stress releasing layer, stress on U/N-GaN monocrystal thin films in U/N-GaN monocrystal thin films Generating longitudinal V-type groove in releasing layer, V-type groove is positioned at directly over threading dislocation；Stress release layer grows MQW Active layer, and on active layer, extend holding V-type groove；Active layer grows P-AlGaN layer, and prolongs on P-AlGaN layer Stretch holding V-type groove；The inclined-plane of V-type groove covers one layer of U-GaN and extends to P-AlGaN layer surface；In V-type groove Fill up P-GaN and V-type groove is filled and led up, covering on the U-GaN extending to P-AlGaN layer surface.
Described stress release layer is monolayer, multilamellar, superlattices or the multi-quantum pit structure of AlxInyGa (1-x-y) N, wherein 0≤x, y≤1, the thickness 0-1um of each layer.
Described V-type slot opening size 0-1um, degree of depth 0-1um.
Described multiple quantum well active layer is monolayer, multilamellar, superlattices or the multi-quantum pit structure of AlxInyGa (1-x-y) N, Wherein 0≤x, y≤1, the thickness 0-1um of each layer.
The thickness of described U-GaN cover layer is 0-100nm.
Described P-GaN is monolayer, multilamellar, superlattices or the multi-quantum pit structure of p-type AlxInyGa (1-x-y) N, wherein 0 < =x, y≤1, the thickness 0-1um of each layer.
Described substrate comprises Al2O3, SiC, Si or GaN.
After using such scheme, V-type groove of the present invention effectively discharges the stress of active area, improves other position of active area Crystal mass, and V-type groove also increases the contact area in electronics and hole, strengthens hole injection efficiency, is effectively improved active area Internal quantum efficiency, improve light emitting diode luminous efficiency.
Accompanying drawing explanation
Fig. 1 is prior art hole and electronics flowing and compound epitaxial structure schematic diagram；
Fig. 2 is the structural representation of the present invention；
Fig. 3 is hole of the present invention and electronics flowing and compound epitaxial structure schematic diagram；
Fig. 4 a is the epitaxial structure schematic diagram of substrate surface of the present invention growth U/N-GaN monocrystal thin films；
Fig. 4 b is present invention growth stress releasing layer schematic diagram on U/N-GaN monocrystal thin films；
Fig. 4 c is that the present invention grows active layer schematic diagram on stress release layer；
Fig. 4 d is that the present invention grows P-AlGaN layer schematic diagram on active layer；
Fig. 4 e is the schematic diagram that the present invention bakes the multiple quantum well active layer on part V-type groove inclined-plane；
Fig. 4 f is the schematic diagram that the present invention bakes the multiple quantum well active layer on whole V-type groove inclined-plane；
Fig. 4 g is the schematic diagram that the present invention grows one layer of U-GaN in V-type groove.
Label declaration
Substrate 1 U/N-GaN monocrystal thin films 2
Threading dislocation 21 stress release layer 3
V-type groove 31 active layer 4
P-AlGaN layer 5 U-GaN6
P-GaN7。
Detailed description of the invention
Below in conjunction with drawings and the specific embodiments, the present invention is described in detail.
Refering to shown in Fig. 2 and Fig. 3, the epitaxial structure of a kind of light emitting diode strengthening injection type that the present invention discloses, Grow at least one of which U/N-GaN monocrystal thin films 2 on substrate 1, U/N-GaN monocrystal thin films 2 generates longitudinal threading dislocation 21, at U/ Growth stress releasing layer 3 on N-GaN monocrystal thin films 2, generates longitudinal V-type groove 31 in stress release layer 3, V-type groove 31 is positioned at Directly over threading dislocation 21.
Stress release layer 3 grows multiple quantum well active layer 4, and on active layer 4, extends holding V-type groove 31；? Grow P-AlGaN layer 5 on active layer 4, and on P-AlGaN layer 5, extend holding V-type groove 31；On the inclined-plane of V-type groove 31 Cover one layer of U-GaN6 and extend to P-AlGaN layer 5 surface；In V-type groove 31, fill up P-GaN7 and V-type groove 31 is filled out Flat, cover on the U-GaN6 extending to P-AlGaN layer 5 surface.
As it is shown on figure 3, " star " represents that electron-hole recombinations is luminous, " arrow " represents current/electric field direction, "+" it is P- GaN, "-" is N-GaN, and V-type groove 31 effectively discharges the stress of active area, improves the crystal mass of other position of active area, and V Type groove 31 also increases electronics and the contact area in hole, strengthens hole injection efficiency, is effectively improved the interior quantum effect of active area Rate.
Described stress release layer 3 is monolayer, multilamellar, superlattices or the multi-quantum pit structure of AlxInyGa (1-x-y) N, its In 0≤x, y≤1, the thickness 0-1um of each layer.Described V-type groove 31 openings of sizes 0-1um, degree of depth 0-1um.
Described multiple quantum well active layer 4 is the monolayer of AlxInyGa (1-x-y) N, multilamellar, superlattices or MQW knot Structure, wherein 0≤x, y≤1, the thickness 0-1um of each layer.The thickness of described U-GaN6 is 0-100nm.
Described P-GaN7 is monolayer, multilamellar, superlattices or the multi-quantum pit structure of p-type AlxInyGa (1-x-y) N, wherein 0 ≤ x, y≤1, the thickness 0-1um of each layer.Described substrate 1 comprises Al2O3, SiC, Si or GaN, or other applicable GaN growth Material.
As shown in Fig. 4 a to Fig. 4 g, the epitaxial structure of a kind of light emitting diode strengthening injection type that the present invention discloses makes Method, comprises the following steps:
One, as shown in fig. 4 a, at substrate 1 superficial growth at least one of which U/N-GaN monocrystal thin films 2, at U/N-GaN monocrystal thin films 2 The longitudinal threading dislocation 21 of middle generation.
Two, as shown in Figure 4 b, growth stress releasing layer 3 on U/N-GaN monocrystal thin films 2, and shape in stress release layer 3 Becoming V-type groove 31, V-type groove 31 is positioned at directly over threading dislocation 21, threading dislocation 21 two-dimensional growth face enlarged openings formed.
Three, as illustrated in fig. 4 c, the stress release layer 3 have V-type groove 31 grows AlInGaN/AlInGaN Multiple-quantum Trap active layer 4, and on active layer 4, extend holding V-type groove 31 shape, and continuous enlargement V-type groove on horizontal growth face The area of 31.
Four, as shown in figure 4d, active layer 4 grows P-AlGaN layer 5, and it is recessed to extend holding V-type on P-AlGaN layer 5 Groove 31.
Five, at N2/H2/NH3In mixed gas atmosphere, annealing is baked on part or all of V-type groove 31 inclined-plane AlInGaN/AlInGaN multiple quantum well active layer 4, such as Fig. 4 e and as shown in fig. 4f, wherein, Fig. 4 e bakes V-type groove for part AlInGaN/AlInGaN multiple quantum well active layer 4 on 31 inclined-planes, Fig. 4 f is all to bake on V-type groove 31 inclined-plane AlInGaN/AlInGaN multiple quantum well active layer 4.Each weight percentages of components of described N2/H2/NH3 mixed gas is a, b, C, wherein 0 < a, b < 100%, c < 100%, described annealing temperature higher than 700 DEG C less than 1200 DEG C.
Six, as shown in figure 4g, grow one layer of U-GaN6 cover layer and on V-type groove 31 inclined-plane and extend to P-AlGaN layer 5 table Face.
Seven, V-type groove 31 is filled and led up and covers on the U-GaN6 extending to P-AlGaN layer 5 surface by growth P-GaN7, shape Become epitaxial structure as shown in Figure 2.
Described stress release layer 3 is monolayer, multilamellar, superlattices or the multi-quantum pit structure of AlxInyGa (1-x-y) N, its In 0≤x, y≤1, the thickness 0-1um of each layer.Described V-type groove 31 openings of sizes 0-1um, degree of depth 0-1um.
Described multiple quantum well active layer 4 is the monolayer of AlxInyGa (1-x-y) N, multilamellar, superlattices or MQW knot Structure, wherein 0≤x, y≤1, the thickness 0-1um of each layer.The thickness of described U-GaN6 cover layer is 0-100nm.
Described P-GaN7 is monolayer, multilamellar, superlattices or the multi-quantum pit structure of p-type AlxInyGa (1-x-y) N, wherein 0 ≤ x, y≤1, the thickness 0-1um of each layer.Described substrate 1 comprises Al2O3, SiC, Si or GaN, or other applicable GaN growth Material.
The formation of V-type groove 31 is the result that threading dislocation 21 discharges stress, and such as GaN superficial growth InGaN/GaN is many SQW or superlattice structure, owing to differences between lattice constant causes stress accumulation will release at threading dislocation 21 to a certain extent Put stress and form V-type groove 31.
The foregoing is only the preferred embodiments of the present invention, not the restriction to this case design, all designs according to this case are closed The equivalent variations that key is done, each falls within the protection domain of this case.

Claims (8)

1. the epitaxial structure manufacture method of the light emitting diode strengthening injection type, it is characterised in that: comprise the following steps:
One, grow at least one of which U/N-GaN monocrystal thin films at substrate surface, generate in U/N-GaN monocrystal thin films and longitudinally penetrate Dislocation；
Two, growth stress releasing layer on U/N-GaN monocrystal thin films, and in stress release layer, form V-type groove, V-type groove It is positioned at directly over threading dislocation, threading dislocation two-dimensional growth face enlarged openings is formed；
Three, the stress release layer with V-type groove grows multiple quantum well active layer, and on active layer, extends holding V-type Groove shapes, and the area of continuous enlargement V-type groove on horizontal growth face；
Four, active layer grows P-AlGaN layer, and on P-AlGaN layer, extends holding V-type groove；
Five, at N2/H2/NH3Annealing in mixed gas atmosphere, it is active to bake the MQW on part or all of V-type groove inclined-plane Layer；
Six, grow one layer of U-GaN cover layer and on V-type groove inclined-plane and extend to P-AlGaN layer surface；
Seven, V-type groove is filled and led up and is covered on the U-GaN extending to P-AlGaN layer surface by growth P-GaN.
The epitaxial structure manufacture method of a kind of light emitting diode strengthening injection type the most as claimed in claim 1, its feature exists In: described stress release layer is monolayer, multilamellar, superlattices or the multi-quantum pit structure of AlxInyGa (1-x-y) N, wherein 0≤x, Y≤1, the thickness 0-1um of each layer.
The epitaxial structure manufacture method of a kind of light emitting diode strengthening injection type the most as claimed in claim 1, its feature exists In: described V-type slot opening size 0-1um, degree of depth 0-1um.
The epitaxial structure manufacture method of a kind of light emitting diode strengthening injection type the most as claimed in claim 1, its feature exists In: described multiple quantum well active layer is monolayer, multilamellar, superlattices or the multi-quantum pit structure of AlxInyGa (1-x-y) N, wherein 0 ≤ x, y≤1, the thickness 0-1um of each layer.
The epitaxial structure manufacture method of a kind of light emitting diode strengthening injection type the most as claimed in claim 1, its feature exists In: the thickness of described U-GaN cover layer is 0-100nm.
The epitaxial structure manufacture method of a kind of light emitting diode strengthening injection type the most as claimed in claim 1, its feature exists In: described P-GaN is monolayer, multilamellar, superlattices or the multi-quantum pit structure of p-type AlxInyGa (1-x-y) N, wherein 0≤x, y < =1, the thickness 0-1um of each layer.
The epitaxial structure manufacture method of a kind of light emitting diode strengthening injection type the most as claimed in claim 1, its feature exists In: described substrate comprises Al2O3, SiC, Si or GaN.
The epitaxial structure manufacture method of a kind of light emitting diode strengthening injection type the most as claimed in claim 1, its feature exists In: described N2/H2/NH3Each weight percentages of components of mixed gas is a, b, c, wherein 0 < a, b < 100%, c < 100%, described in move back Fire temperature is less than 1200 DEG C higher than 700 DEG C.
CN201610273688.XA 2016-04-28 2016-04-28 Manufacturing method for epitaxial structure of enhanced injection type light-emitting diode Pending CN105762241A (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106601885A (en) * 2016-12-16 2017-04-26 厦门乾照光电股份有限公司 Light emitting diode epitaxial structure and growth method thereof
CN106848011A (en) * 2017-01-24 2017-06-13 厦门三安光电有限公司 Gallium nitride based light emitting diode and preparation method thereof
CN108198920A (en) * 2017-11-15 2018-06-22 华灿光电（浙江）有限公司 A kind of LED epitaxial slice and preparation method thereof
CN110970533A (en) * 2019-12-30 2020-04-07 广东德力光电有限公司 Purple light epitaxial structure of LED flip chip and preparation method thereof
WO2021048625A1 (en) * 2019-09-11 2021-03-18 Hong Kong Beida Jade Bird Display Limited Multi-color led pixel unit and micro-led display panel
CN113228309A (en) * 2019-11-26 2021-08-06 重庆康佳光电技术研究院有限公司 Light emitting diode structure

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008232238A (en) * 2007-03-20 2008-10-02 Calsonic Compressor Inc Fastening member and gas compressor using this fastening member
CN102484179A (en) * 2009-11-25 2012-05-30 普瑞光电股份有限公司 LED with improved injection efficiency
CN103460409A (en) * 2011-09-29 2013-12-18 东芝技术中心有限公司 P-type doping layers for use with light emitting devices
CN104733579A (en) * 2015-01-20 2015-06-24 扬州德豪润达光电有限公司 Semiconductor light-emitting device and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008232238A (en) * 2007-03-20 2008-10-02 Calsonic Compressor Inc Fastening member and gas compressor using this fastening member
CN102484179A (en) * 2009-11-25 2012-05-30 普瑞光电股份有限公司 LED with improved injection efficiency
CN103460409A (en) * 2011-09-29 2013-12-18 东芝技术中心有限公司 P-type doping layers for use with light emitting devices
CN104733579A (en) * 2015-01-20 2015-06-24 扬州德豪润达光电有限公司 Semiconductor light-emitting device and manufacturing method thereof

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106601885A (en) * 2016-12-16 2017-04-26 厦门乾照光电股份有限公司 Light emitting diode epitaxial structure and growth method thereof
CN106848011A (en) * 2017-01-24 2017-06-13 厦门三安光电有限公司 Gallium nitride based light emitting diode and preparation method thereof
CN108198920A (en) * 2017-11-15 2018-06-22 华灿光电（浙江）有限公司 A kind of LED epitaxial slice and preparation method thereof
WO2021048625A1 (en) * 2019-09-11 2021-03-18 Hong Kong Beida Jade Bird Display Limited Multi-color led pixel unit and micro-led display panel
US11114419B2 (en) 2019-09-11 2021-09-07 Jade Bird Display (shanghai) Limited Multi-color LED pixel unit and micro-LED display panel
CN113228309A (en) * 2019-11-26 2021-08-06 重庆康佳光电技术研究院有限公司 Light emitting diode structure
CN113228309B (en) * 2019-11-26 2022-04-29 重庆康佳光电技术研究院有限公司 Light emitting diode structure
US11984530B2 (en) 2019-11-26 2024-05-14 Chongqing Konka Photoelectric Technology Research Institute Co., Ltd. Light emitting diode structure
CN110970533A (en) * 2019-12-30 2020-04-07 广东德力光电有限公司 Purple light epitaxial structure of LED flip chip and preparation method thereof
CN110970533B (en) * 2019-12-30 2021-10-08 广东德力光电有限公司 Purple light epitaxial structure of LED flip chip and preparation method thereof

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Application publication date: 20160713