CN105755436B - Membrane deposition method - Google Patents
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- CN105755436B CN105755436B CN201410779568.8A CN201410779568A CN105755436B CN 105755436 B CN105755436 B CN 105755436B CN 201410779568 A CN201410779568 A CN 201410779568A CN 105755436 B CN105755436 B CN 105755436B
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Abstract
The present invention provides a kind of membrane deposition method depositing conductive layer in substrate surface, wherein the method includes：S1, the first conductive layer is formed in the upper surface of substrate；It is fixed on the pedestal of process cavity with S2, using pressure ring by the substrate, the pressure ring includes multiple claws, and first conductive layer is between the substrate and the claw, and deposition forms the second conductive layer on the substrate.In step s 2, there is the first conductive layer formed in step sl between the claw and substrate of pressure ring, therefore, contact between claw and the first conductive layer contacts for face, compared with line in the prior art contacts, it is clear that in method provided by the present invention, the resistance smaller between claw and the first conductive layer, so as to form better equipotential between substrate and pressure ring, spark phenomenon is avoided.
Description
Technical field
The present invention relates to field of semiconductor processing, and in particular, to a kind of film depositing conductive layer in substrate surface is heavy
Product method.
Background technology
Magnetron sputtering is deposited metal layer and the widely used method of associated materials in ic manufacturing process.Magnetic at present
Control sputtering technology is mainly supported silicon chip using electrostatic chuck, unlike integrated circuit copper interconnecting technique, silicon hole
In deposition film thickness it is larger, membrane stress cross conference cause electrostatic chuck can not to chip carry out Electrostatic Absorption；And
After silicon hole film deposition has more now in road packaging technology, chip needed after being generally thinned using glassy bond to chip into
Row support, electrostatic chuck equally can not carry out Electrostatic Absorption to substrate of glass.And cost existing for electrostatic chuck is higher, is not easy to tie up
The factors such as shield.Therefore it in the magnetron sputtering of silicon hole, needs that silicon chip is fixed using mechanical chuck.
Typical magnetron sputtering apparatus is as shown in Figure 1, the magnetron sputtering apparatus has circular ring type reaction cavity 1, for holding
The chuck 9 for carrying substrate, the target 4 being sealed in vacuum cavity, the magnetron sputtering pipe 5 that is arranged in vacuum cavity and for driving
The motor 6 of magnetron sputtering pipe 5.The side wall 2 for surrounding the vacuum cavity is made of insulating materials (such as G10), the vacuum wall
Deionized water 3 is filled in body.When carrying out sputtering technology, DC power supply, which can be biased, makes its chamber relative to ground connection to target 4
Body become negative pressure so that argon gas discharging and generate plasma, positively charged argon ion is attracted to the target 4 of back bias voltage.When
When the energy of argon ion is sufficiently high, metallic atom effusion target material surface can be made and be deposited on substrate 10.Using with certain weight
Substrate 10 is mechanically pressed in mechanical chuck 9 and carries out sputtering technology by pressure ring 8 made of the metal of amount, in reaction cavity
It is additionally provided with the technique component 7 for being used to support pressure ring 8 and protecting process cavity side wall, which passes through earth lead 11
Ground connection.
Shown in Fig. 2 is the structure of common pressure ring 8, in order to make substrate can keep for 10 times certain high pressure into
Row conducts heat, and can be distributed a certain number of claws 13 on pressure ring 8.The structure of claw as shown in figure 3, strike sparks in order to prevent, pedestal 9,
Pressure ring 8 and 10 three of substrate need equipotential, and when carrying out sputtering technology, it is inclined to apply on pedestal 9 radio frequency by radio-frequency power supply 12
Pressure, by luring electric coil to form electrical contact between pressure ring 8 and pedestal 9, therefore pressure ring 8 and pedestal 9 are equipotentials；In order to realize pressure
Equipotential between ring 8 and chip 10, claw 13 and the substrate 10 of pressure ring are in direct contact, during sputtering skill, metallic film
Deposition chip 10 and claw 13 are connected, formed chip and pressure ring equipotential, prevent from striking sparks, as shown in Figure 4.
In TSV applications, the quantity of claw is the smaller the better on pressure ring, to allow the effective area of plated film to increase, the area of loss
Domain is the smaller the better.But claw only forms conductive layer by the film that a layer line contacts, as shown in figure 4, due to contact area
It is small, cause resistance excessive, it is easy to cause substrate to overheat, easily strike sparks.
Invention content
The purpose of the present invention is to provide a kind of membrane deposition methods depositing conductive layer in substrate surface, utilize the film
Deposition method is less likely to occur to strike sparks when the substrate surface deposits conductive layer.
To achieve the goals above, the present invention provides a kind of membrane deposition method, wherein the membrane deposition method packet
It includes：
S1, the first conductive layer is formed in the upper surface of substrate；With
S2, the substrate being fixed on the pedestal of process cavity using pressure ring, the pressure ring includes multiple claws, and described
One conductive layer is between the substrate and the claw, and deposition forms the second conductive layer on the substrate.
Preferably, the step S1 includes：
S11, the substrate is fixed on the pedestal in process cavity using pressure ring, the pressure ring includes multiple claws, institute
The side edge for stating claw and the substrate is touched；
S12, depositing first conductive layer；
The step S2 includes：
S21, the substrate is rotated into predetermined angular, so that the portion that the substrate is in contact with the claw in step sl
Divide and is exposed；
S22, the substrate is fixed on the pedestal in process cavity using pressure ring, first conductive layer is located at the base
Between piece and the claw；
S23, deposit second conductive layer.
Preferably, first conductive layer is identical as the second conductive layer material.
Preferably, first conductive layer and second conductive layer are by any one in Ta, Cu, Al, NiV, TiW
It is made.
Preferably, the predetermined angular is less than the angle between the two neighboring claw.
Preferably, the predetermined angular is equal to the half of the angle between the two neighboring claw.
Preferably, the step 21 carries out outside process cavity.
Preferably, the step S21 includes：
S211, the substrate is transmitted to the wafer position calibrating installation out of described process cavity；
S212, by the substrate rotate predetermined angular so that the substrate in step S 1 with the claw joint
Part is exposed；
S213, the substrate is transmitted to from the wafer position calibrating installation in the process cavity.
Preferably, the step 21 carries out in process cavity.
Preferably, the step S21 includes：
S211, the pedestal drop to transmission location；
S212, the pedestal drive the substrate to rotate predetermined angular so that the substrate in step sl with the pressure
The part of pawl joint is exposed；
S213, the pedestal rise to process station.
Preferably, the thickness of first conductive layer is 50~100nm.
In step s 2, there is the first conductive layer formed in step sl between the claw and substrate of pressure ring, therefore, pressure
Contact between pawl and the first conductive layer contacts for face, compared with line in the prior art contacts, it is clear that provided by the present invention
In method, the resistance smaller between claw and the first conductive layer is preferably etc. electric so as to be formed between substrate and pressure ring
Position, avoids spark phenomenon.
Description of the drawings
Attached drawing is to be used to provide further understanding of the present invention, an and part for constitution instruction, with following tool
Body embodiment is used to explain the present invention together, but is not construed as limiting the invention.In the accompanying drawings：
Fig. 1 is the schematic diagram of the equipment used when magnetron sputtering；
Fig. 2 is the dimensional structure diagram of pressure ring；
Fig. 3 is that in the prior art, pressure ring is in direct contact the schematic diagram of substrate before carrying out magnetron sputtering technique；
Fig. 4 is in the prior art, to deposit the schematic diagram that pressure ring is in contact with substrate after forming conductive film；
Fig. 5 is the flow diagram of method provided by the present invention；
Fig. 6 be in method provided by the present invention, after rotary substrate, the vertical view of pressure ring and substrate
Fig. 7 is the A-A sectional views in Fig. 6；
Fig. 8 is the signal that deposition on substrate has the first conductive layer and the second conductive layer after method provided by the present invention
Figure.
Reference sign
1：Reaction cavity 2：Side wall
3：Deionized water 4：Target
5：Magnetron 6：Motor
7：Technique component 8：Pressure ring
9：Chuck 10：Substrate
11：Earth lead 12：Radio-frequency power supply
13：Claw 14：Conductive layer
14a：First conductive layer 14b：Second conductive layer
Specific implementation mode
The specific implementation mode of the present invention is described in detail below in conjunction with attached drawing.It should be understood that this place is retouched
The specific implementation mode stated is merely to illustrate and explain the present invention, and is not intended to restrict the invention.
As shown in Fig. 5 to Fig. 8, the present invention provides a kind of membrane deposition method depositing conductive layer in substrate surface,
In, the membrane deposition method includes：
S1, the first conductive layer 14a is formed in the upper surface of substrate 10；With
S2, substrate 10 being fixed on the pedestal of process cavity using pressure ring 8, wherein pressure ring 8 includes multiple claws 13, the
One conductive layer 14a is between substrate 10 and claw 13, and deposition forms the second conductive layer 14b on substrate 10.
It should be pointed out that in the present invention, step S2 is main deposition step, is mainly formed on substrate by step S2
Conductive layer with required thickness.As shown in Figures 7 and 8, due in step s 2, the claw 13 and substrate 10 of pressure ring 8 it
Between there is the first conductive layer 14a for being formed in step sl, therefore, the contact between claw 13 and the first conductive layer 14a is face
Contact, compared with line in the prior art contacts, it is clear that in method provided by the present invention, claw 13 and the first conductive layer 14a
Between resistance smaller avoid spark phenomenon so as to form better equipotential between substrate 10 and pressure ring 8.
Preferably, the first conductive layer 14a and the second conductive layer 14b is formed from the same material, therefore, the first conductive layer
14a and the second conductive layer 14b are ultimately formed and are integrated.Further, in the present invention, the first conductive layer 14a and second is conductive
Layer 14b is made of any one in Ta, Cu, Al, NiV, TiW.
In the present invention, the specific method for forming the first conductive layer 14a is not limited, as long as the first conductive layer 14a
Meet technological requirement after being formed as one with the second conductive layer 14b.It, can as a kind of preferred embodiment of the present invention
To form the first conductive layer 14a of the identical method formation of the second conductive layer 14b using with deposition.
Specifically, the step S1 may include：
S11, substrate 10 is fixed on the pedestal in process cavity using pressure ring 8, the pressure ring includes multiple claws 13, should
Multiple claws 13 and the side edge of substrate 10 are touched；
S12, depositing first conductive layer 14a.
In step s 2, forming the second conductive layer 14b using the method for sputtering therefore in the step S1, can also
It is deposited on substrate 10 using the method for sputtering and forms the first conductive layer 14a.
After step S1, the first conductive layer 14a covers its other than the part of 13 lower section of claw on substrate 10
His part.That is, after step S1, before step S2 starts, the part on substrate 10 below the claw of the pressure ring
There is no depositions conductive film, and therefore, step S2 may include：
S21, substrate 10 is rotated into predetermined angular, so that the part being in contact in step sl with claw 13 on substrate 10 is sudden and violent
Expose；
S22, substrate 10 is fixed on the pedestal in process cavity using pressure ring 8, the first conductive layer 14a is located at 10 He of substrate
Between claw 13；
S23, deposit second conductive layer 14b.
Substrate can be rotated, then substrate is fixed on chuck using pressure ring again, in this way, carrying out step
Just first conductive layer is provided with when S2, between claw and substrate.As shown in fig. 6, after being rotated, does not deposit and led
The region I of electrolemma is staggered with claw 13, to not interfere with the conductive contact between claw 13 and the first conductive layer 14a.At this
In invention, to the size of the predetermined angular there is no specifically limited, as long as the predetermined angular is less than two neighboring claw 13
Between angle, and the lower section of claw 13 is the first conductive layer 14a after enabling to rotation.
Preferably, the predetermined angular is equal to the half of the angle between the two neighboring claw.In general, two neighboring
Central angle between claw 13 is 45 °, and therefore, the predetermined angular can be 22.5 °.
When rotating and depositing has the substrate of first conductive layer, the pressure ring does not rotate with.Therefore, it is necessary to will
Pressure ring unclamps.
As a kind of specific implementation mode of the present invention, the step S21 can be carried out outside process cavity.Specifically, institute
Stating step S21 may include：
S211, the substrate is transmitted to the wafer position calibrating installation out of described process cavity；
S212, by the substrate rotate predetermined angular so that the substrate in step S 1 with the claw joint
Part is exposed；
S213, the substrate is transmitted to from the wafer position calibrating installation in the process cavity.
In step S211, manipulator can be utilized to have the substrate of the first conductive layer to be taken out from process cavity deposition, so
The substrate is rotated through by the predetermined angular by substrate position calibrating installation (aligner) afterwards.
As another preferred embodiment of the present invention, the step S21 can be carried out in process cavity.Specifically,
The step S21 may include：
S211, the pedestal drop to transmission location；
S212, the pedestal drive the substrate to rotate predetermined angular so that the substrate in step sl with the pressure
The part of pawl joint is exposed；
S213, the pedestal rise to process station.
In step sl, the first conductive layer 14a is formed by way of sputtering, similarly, in step s 2, passes through sputtering
Mode form the second conductive layer 14b.As mentioned above it is possible, the first conductive layer 14a and the second conductive layer 14b by Ta, Cu,
Any one in Al, NiV, TiW is made, therefore, carry out step S1 and step S2 target can be selected from Ta, Cu, Al,
Any one in NiV, TiW.
As mentioned above it is possible, in step sl, first conductive layer, step are formed on substrate by the method for sputtering
S1 durations should be less than step S2 durations, so as to avoid that spark phenomenon occurs in step sl.In general,
In step sl so that thickness of first conductive layer with 50~100nm can be effectively increased claw and base in step S2
Electric conductivity between piece.In step sl, step coverage is not required, as long as forming one layer of conduction on the surface of substrate
Film.Therefore, in order to it is energy saving, convenient for control, in the step S1, the bias being applied on the chuck can be
0。
As a kind of specific implementation mode of the present invention, the step S12 may include：
S121, it is passed through process gas and back of the body blowing, so that the air pressure in process cavity reaches predetermined pressure；
S122, it is continually fed into the process gas and the back of the body blowing, and build-up of luminance is carried out using dc power, so that institute
It states process gas and forms plasma；
S123, dc power is improved, and is continually fed into the process gas, to form conductive film in the substrate surface；
Dc power in S124, holding step S123, is continually fed into the process gas, and be passed through back of the body blowing；
S125, stop dc power, and be continually fed into the process gas and the back of the body blowing.
Preferably, in the step S121, the flow of the process gas is 8~12sccm, the back of the body blowing
Flow is 6~10sccm, and the duration is 8~12s；
In the step S122, the flow of the process gas is 3~7sccm, the flow of the back of the body blowing is 3~
7sccm, dc power are 800~1200W, and the duration is 3~5s；
In the step S123, dc power be 15000~20000W, duration 2s, the process gas
Flow is 3~7sccm；
In the step S124, the flow of the process gas is 15~20sccm, the back of the body blowing flow for 6~
10sccm, duration are 15~25s；
In the step S125, the process gas flow is 15~20sccm, the back of the body blowing flow for 6~
10sccm, duration are 25~35s.
Herein, process gas and back of the body blowing all can be Ar.It will be readily appreciated by those skilled in the art that process gas
Effect be to carry out physical vapour deposition (PVD) target bombard, the effect for carrying on the back blowing is cooled down to substrate.In step
It is so that scheduled air pressure is maintained in process cavity, in general, the gas in process cavity to be passed through the main function of process gas in rapid S121
Pressure can maintain between 5~10mTorr.Start to be formed to conductive film, in step S14 in deposition on substrate in step S123
In, conductive film is further deposited on substrate.The purpose of step S125 mainly cools down substrate.
After step S125, thickness described first leading between 50~100nm can be substantially formed on substrate
Electric layer.5s can take out the substrate from the process cavity after step S125.
Step S2 is also sputter deposition craft, it is preferable that the step S23 includes：
S231, the substrate is fixed on the chuck using the pressure ring, and is passed through process gas and back of the body blowing,
So that the air pressure in process cavity reaches predetermined pressure；
S232, it is continually fed into the process gas and the back of the body blowing, and build-up of luminance is carried out using dc power, so that institute
It states process gas and forms plasma；
S233, dc power is improved, and is continually fed into the process gas, to form conductive film in the substrate surface；
Dc power in S234, holding step S233, is continually fed into the process gas, and be passed through back of the body blowing；
S235, stop dc power, and be continually fed into the process gas and the back of the body blowing；
S236, step S233 to step S255 is repeated, until forming described second with predetermined thickness on the substrate
Until conductive layer.
As mentioned above it is possible, after step S123 to step S125, can be formed on substrate thickness 50nm extremely
Therefore the first conductive layer between 100nm after step S233 to step S235, can be formed on the substrate
50nm is to the conductive film between 100nm.In the present invention, the thickness of the second conductive layer is more than the thickness of the first conductive layer.Therefore,
It needs to repeat repeatedly counting for step S233 to step S235, to form the second conductive layer with predetermined thickness.It can root
The final thickness of the second conductive layer is determined according to the final application scenario of the substrate.
Preferably, in the step S231, the flow of the process gas is 8~12sccm, the back of the body blowing
Flow is 6~10sccm, and the duration is 8~12s；
In the step S232, the flow of the process gas is 3~7sccm, the flow of the back of the body blowing is 3~
7sccm, dc power are 800~1200W, and the duration is 3~5s；
In the step S233, dc power be 15000~20000W, duration 2s, the process gas
Flow is 3~7sccm；
In the step S234, the flow of the process gas is 15~20sccm, the back of the body blowing flow for 6~
10sccm, duration are 15~25s, and the rf bias being applied on the chuck is 120V；
In the step S235, the process gas flow is 15~20sccm, the back of the body blowing flow for 6~
10sccm, duration are 25~35s.
In the step S236, the rf bias of the substrate surface is 120V, so as to improve in step S2
Step coverage.
A kind of specific implementation mode of method provided by the present invention is described below.
It is the technological parameter of step S12 shown in table 1, is the technological parameter of step S23 shown in table 2, in step S1
Between step S2, substrate is turned over 22.5 °.Step S16 is indicated in table 1, by substrate from process cavity after step S15 terminates 5s
Middle taking-up.In table 2, [the S23-S25 of step S26；3] indicate that step S23 to step S25 is repeated 3 times；Step S27 is indicated, in step
Rapid S26 takes out substrate after terminating 5s from process cavity.Also, in step S1 and step S2, target is：Ti.
Table 1
| Step | S121 | S122 | S123 | S124 | S125 | S126 |
| Duration (s) | 10 | 3 | 2 | 20 | 30 | 5 |
| Dc power (W) | 0 | 1000 | 19000 | 19000 | 0 | 0 |
| Source DC Ramp | 0 | 0 | 0 | 0 | 0 | 0 |
| Rf bias | 0 | 0 | 0 | 0 | 0 | 0 |
| Bias RF Ramp | 0 | 0 | 0 | 0 | 0 | 0 |
| Bias matches | Auto | Auto | Auto | Auto | Auto | Auto |
| Process gas Ar (sccm) | 10 | 5 | 5 | 0 | 20 | 0 |
| Carry on the back blowing Ar (sccm) | 8 | 5 | 5 | 5 | 8 | 0 |
| Process station | Pos1 | Pos1 | Pos1 | Pos1 | Pos1 | Pos1 |
Table 2
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, in the essence for not departing from the present invention
In the case of refreshing and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of membrane deposition method, which is characterized in that the membrane deposition method includes：
S1, the first conductive layer is formed in the upper surface of substrate；Wherein, step S1 includes：
S11, the substrate is fixed on the pedestal in process cavity using pressure ring, the pressure ring includes multiple claws, the pressure
The side edge of pawl and the substrate is touched；
S12, depositing first conductive layer；
S2, the substrate is fixed on the pedestal of process cavity using pressure ring, the pressure ring includes multiple claws, and described first leads
Electric layer is between the substrate and the claw, and deposition forms the second conductive layer on the substrate；Wherein, step S2 packets
It includes：
S21, the substrate is rotated into predetermined angular, so that the part that the substrate is in contact with the claw in step sl is sudden and violent
Expose；
S22, the substrate is fixed on the pedestal in process cavity using pressure ring, first conductive layer be located at the substrate and
Between the claw；
S23, deposit second conductive layer.
2. membrane deposition method according to claim 1, which is characterized in that first conductive layer is conductive with described second
Layer material is identical.
3. membrane deposition method according to claim 2, which is characterized in that first conductive layer and second conduction
Layer is made of any one in Ta, Cu, Al, NiV, TiW.
4. membrane deposition method according to claim 1, which is characterized in that the predetermined angular is less than two neighboring described
Angle between claw.
5. membrane deposition method according to claim 1, which is characterized in that the predetermined angular is equal to two neighboring described
The half of angle between claw.
6. membrane deposition method according to claim 1, which is characterized in that the step S21 is carried out outside process cavity.
7. membrane deposition method according to claim 6, which is characterized in that the step S21 includes：
S211, the substrate is transmitted to wafer position calibrating installation out of described process cavity；
S212, the substrate is rotated into predetermined angular, so that the substrate part with the claw joint in step sl
It is exposed；
S213, the substrate is transmitted to from the wafer position calibrating installation in the process cavity.
8. membrane deposition method according to claim 1, which is characterized in that the step S21 is carried out in process cavity.
9. membrane deposition method according to claim 8, which is characterized in that the step S21 includes：
S211, the pedestal drop to transmission location；
S212, the pedestal drive the substrate to rotate predetermined angular so that the substrate in step sl with the claw phase
The part at the place of connecing is exposed；
S213, the pedestal rise to process station.
10. membrane deposition method according to claim 1, which is characterized in that the thickness of first conductive layer be 50~
100nm。
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| CN109695022B (en) * | 2017-10-24 | 2021-11-12 | 北京北方华创微电子装备有限公司 | Process chamber, semiconductor processing equipment and thin film deposition method |
| CN112086336A (en) * | 2019-06-12 | 2020-12-15 | 北京北方华创微电子装备有限公司 | Semiconductor process assembly and semiconductor processing equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101805884A (en) * | 2010-03-18 | 2010-08-18 | 上海小糸车灯有限公司 | Glow discharge conductive rod used for vacuum aluminizing |
| CN103261477A (en) * | 2010-12-08 | 2013-08-21 | Oc欧瑞康巴尔斯公司 | Apparatus and method for depositing a layer onto a substrate |
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| KR100378187B1 (en) * | 2000-11-09 | 2003-03-29 | 삼성전자주식회사 | A wafer stage including electro-static chuck and method for dechucking wafer using the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101805884A (en) * | 2010-03-18 | 2010-08-18 | 上海小糸车灯有限公司 | Glow discharge conductive rod used for vacuum aluminizing |
| CN103261477A (en) * | 2010-12-08 | 2013-08-21 | Oc欧瑞康巴尔斯公司 | Apparatus and method for depositing a layer onto a substrate |
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