CN105742195A - Manufacturing method for etching buried hole-type surface sound filter chip packaging structure - Google Patents
Manufacturing method for etching buried hole-type surface sound filter chip packaging structure Download PDFInfo
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- CN105742195A CN105742195A CN201610202597.7A CN201610202597A CN105742195A CN 105742195 A CN105742195 A CN 105742195A CN 201610202597 A CN201610202597 A CN 201610202597A CN 105742195 A CN105742195 A CN 105742195A
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- Prior art keywords
- wafer
- surface sound
- filtering chip
- sound filtering
- laminating
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- 238000005530 etching Methods 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000004806 packaging method and process Methods 0.000 title abstract 3
- 239000002184 metal Substances 0.000 claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 44
- 239000000853 adhesive Substances 0.000 claims abstract description 13
- 230000001070 adhesive effect Effects 0.000 claims abstract description 13
- 238000005520 cutting process Methods 0.000 claims abstract description 13
- 238000001914 filtration Methods 0.000 claims description 57
- 238000010030 laminating Methods 0.000 claims description 42
- 230000006698 induction Effects 0.000 claims description 17
- 239000003292 glue Substances 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 12
- 239000004568 cement Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000011161 development Methods 0.000 claims description 10
- 238000001259 photo etching Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 238000003475 lamination Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000004677 Nylon Substances 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention relates to a manufacturing method for etching a buried hole-type surface sound filter chip packaging structure. The method comprises the following steps: (1) taking a surface sound filter chip wafer; (2) preparing a first metal layer in an electrode region of the surface sound filter chip wafer; (3) preparing an insulating layer; (4) forming an opening in a lamination wafer and carrying out lamination; (5) burying a conductive adhesive or plated metal for hole burying into the opening; (6) preparing a second metal layer, namely preparing the second metal layer on the surface of the conductive adhesive or the plated metal buried into the opening in the step (5); (7) carrying out ball placement on the surface of the second metal layer; and (8) cutting and dividing to obtain single products. By the manufacturing method for etching the buried hole-type surface sound filter chip packaging structure, a surface sound filter device with relatively small area and volume can be provided; and the surface sound filter device has relatively low manufacturing cost.
Description
Technical field
The present invention relates to a kind of manufacture method etching buried via hole type surface sound filtering chip encapsulating structure, belong to technical field of semiconductor encapsulation.
Background technology
Surface sound filter apparatus is widely used in RF and IF application, including pocket telephone, radiophone and various radio device.By using surface sound filtering, these electronic equipments are carried out the filtering of the signal of telecommunication, time delay etc. and processes.Because of surface acoustical filter properties of product and design function demand, it is necessary to ensure that filtering chip functional area can not contact any material, i.e. cavity structure design.
Existing surface acoustic filter part encapsulating structure is filtering chip to be passed through conductive projection flip chip bonding be connected with ceramic substrate and be embedded in substrate cavity body completely, and substrate surface adds crown cap protection.But this kind of structural metal lid is relatively costly, and ceramic substrate compares high with the flatness requirement of crown cap, it is easy to have the situation of close bad.Additionally the manufacture method of other surface acoustic filter parts is to use top sealing or coating process that module is sealed, and forms cavity structure.
The method for packing of existing surface acoustic filter part, flow process is longer, relatively costly, and physical dimension or relatively larger, under the trend trend that current electronic equipment does less and less, it is necessary to constantly reduce electronic installation and the weight of surface acoustic filter part wherein used and size.
Summary of the invention
The technical problem to be solved is to provide a kind of manufacture method etching buried via hole type surface sound filtering chip encapsulating structure for above-mentioned prior art, and it is provided that the surface acoustic filter part of a kind of less area and volume, and has less manufacturing cost.
This invention address that the technical scheme that the problems referred to above adopt is: a kind of manufacture method etching buried via hole type surface sound filtering chip encapsulating structure, described method comprises the following steps that:
Step one, take a piece of surface sound filtering chip wafer；
Step 2, prepare the first metal layer at the electrode zone of surface sound filtering chip wafer；
Step 3, prepare insulating barrier
Being coated with one layer of certain thickness insulating cement on the sound filtering chip wafer of surface with coating technique, with photoetching, the insulating cement of electrode zone and chip induction region position is removed by the method for development；
Step 4, laminating wafer perforate are also fitted
Take a piece of laminating wafer, first the position that laminating wafer corresponds to above the electrode of surface sound filtering chip wafer is carried out perforate, then the laminating wafer being complete perforate is fit together by adhesive glue and surface sound filtering chip wafer, thus being formed over cavity at chip induction region；
Step 5, buried via hole
Imbed in perforate with conducting resinl or plated metal；
Step 6, prepares the second metal level
In step 5 perforate, the second metal level is prepared on the conducting resinl of embedment or the surface of plated metal；
Step 7, cutting
Cutting is divided into single product.
A kind of manufacture method etching buried via hole type surface sound filtering chip encapsulating structure, described method comprises the following steps that:
Step one, take a piece of surface sound filtering chip wafer；
Step 2, prepare the first metal layer at the electrode zone of surface sound filtering chip wafer；
Step 3, prepare insulating barrier
Being coated with one layer of certain thickness insulating cement on the sound filtering chip wafer of surface with coating technique, with photoetching, the insulating cement of electrode zone and chip induction region position is removed by the method for development；
Step 4, half-etching laminating wafer are also fitted
Take a piece of laminating wafer, first the position that laminating wafer corresponds to above the electrode of surface sound filtering chip wafer is carried out half-etching perforate, then the laminating wafer being complete half-etching is fit together by adhesive glue and surface sound filtering chip wafer, thus being formed over cavity at chip induction region；
Step 5, thinning
Laminating wafer is ground, is thinned to the position of laminating wafer half-etching, to expose perforate；
Step 6, buried via hole
Imbed in perforate with conducting resinl or plated metal；
Step 7, prepares the second metal level
In step 6 perforate, the second metal level is prepared on the conducting resinl of embedment or the surface of plated metal；
Step 8, cutting
Cutting is divided into single product.
Between described step 7 and step 8, the second layer on surface of metal is planted ball.
Described insulating barrier adopts B-stage glue, it may be unnecessary to is coated with adhesive glue on laminating wafer, is made directly laminating.
Described laminating wafer adopts glass material, insulant.
Compared with prior art, it is an advantage of the current invention that:
1, compared with traditional technique, integral production flow process is wafer scale, can form undersized encapsulating structure, and technique is simple, can guarantee that the cavity structure of chip induction zone, can form the etching buried via hole type surface sound filtering chip encapsulating structure that reliability is higher；
2, the etching buried via hole type surface sound filtering chip encapsulating structure of the present invention can directly use, it is also possible to total and other encapsulating structures are formed secondary encapsulation on substrate, forms system in package.
Accompanying drawing explanation
Fig. 1 is a kind of schematic diagram etching buried via hole type surface sound filtering chip encapsulating structure of the present invention.
Fig. 2 ~ Fig. 9 is the process chart of a kind of manufacture method embodiment one etching buried via hole type surface sound filtering chip encapsulating structure of the present invention.
Figure 10 ~ Figure 18 is the process chart of a kind of manufacture method embodiment two etching buried via hole type surface sound filtering chip encapsulating structure of the present invention.
Wherein:
Surface sound filtering chip wafer 1
Electrode zone 1.1
Induction region 1.2
The first metal layer 2
Insulating barrier 3
Laminating wafer 4
Adhesive glue 5
Metal ball 6
Cavity 7
Perforate 8
Conducting resinl or plated metal 9
Second metal level 10.
Detailed description of the invention
Below in conjunction with accompanying drawing embodiment, the present invention is described in further detail.
As shown in Figure 1, one etching buried via hole type surface sound filtering chip encapsulating structure in the present embodiment, it includes surface sound filtering chip wafer 1, sound filtering chip wafer 1 surface, described surface includes electrode zone 1.1 and induction region 1.2, described electrode zone 1.1 surface configuration has the first metal layer 2, the sound filtering chip wafer 1 region except electrode zone 1.1 and induction region 1.2 in described surface is provided with insulating barrier 3, described insulating barrier 3 is provided with laminating wafer 4 above through adhesive glue 5, cavity 7 is formed between described laminating wafer 4 and induction region 1.2, described laminating wafer 4 is provided with perforate 8 in electrode zone 1.1 position, conducting resinl or plated metal 9 it is filled with in described perforate 8, the surface configuration of described conducting resinl or plated metal 9 has the second metal level 10.
Described second metal level 10 is provided with metal ball 6.
Embodiment one:
A kind of manufacture method etching buried via hole type surface sound filtering chip encapsulating structure, it comprises the following steps that:
Step one, referring to Fig. 2, take a piece of surface sound filtering chip wafer；
Step 2, referring to Fig. 3, the electrode zone at surface sound filtering chip wafer prepares the first metal layer；
Surface sound filtering chip wafer is by cleaning, and baking, sputtering, resist coating, photoetching, development, copper electroplating layer, photoresist of delustering, the method for etching prepares the first metal layer at electrode zone；
Step 3, prepare insulating barrier
Referring to Fig. 4, on the sound filtering chip wafer of surface, be coated with one layer of certain thickness insulating cement with coating technique, such as PI(polyimides), PA (nylon, polyamide), with photoetching, the insulating cement of electrode zone and chip induction region position is removed by the method for development；
Step 4, laminating wafer perforate are also fitted
Referring to Fig. 5, take a piece of laminating wafer, first the position that laminating wafer corresponds to above the electrode of surface sound filtering chip wafer is carried out perforate, then the laminating wafer being complete perforate is fit together by adhesive glue and surface sound filtering chip wafer, thus being formed over cavity at chip induction region；
Step 5, buried via hole
Referring to Fig. 6, imbed in perforate with conducting resinl or plated metal；
Step 6, prepares the second metal level
Referring to Fig. 7, by cleaning, baking, sputtering, resist coating, photoetching, development, copper electroplating layer, photoresist of delustering, the method for etching prepares the second metal level on the surface of conducting resinl or plated metal；
Step 7, plant ball
Referring to Fig. 8, carry out planting ball at the second layer on surface of metal；
Step 8, cutting
Referring to Fig. 9, cutting is divided into single product.
In above-mentioned steps, step 7 can be omitted；
In above-mentioned steps, described insulating barrier can be B-stage glue, melted after colloid heating, now can be coated with adhesive glue on laminating wafer, be made directly laminating；
Described laminating wafer adopts glass material or other insulant；
Embodiment two:
A kind of manufacture method etching buried via hole type surface sound filtering chip encapsulating structure, it comprises the following steps that:
Step one, referring to Figure 10, take a piece of surface sound filtering chip wafer；
Step 2, referring to Figure 11, the electrode zone at surface sound filtering chip wafer prepares the first metal layer；
Surface sound filtering chip wafer is by cleaning, and baking, sputtering, resist coating, photoetching, development, copper electroplating layer, photoresist of delustering, the method for etching prepares the first metal layer at electrode zone；
Step 3, prepare insulating barrier
Referring to Figure 12, on the sound filtering chip wafer of surface, be coated with one layer of certain thickness insulating cement with coating technique, such as PI(polyimides), PA (nylon, polyamide), with photoetching, the insulating cement of electrode zone and chip induction region position is removed by the method for development；
Step 4, half-etching laminating wafer are also fitted
Referring to Figure 13, take a piece of laminating wafer, first the position that laminating wafer corresponds to above the electrode of surface sound filtering chip wafer is carried out half-etching perforate, then the laminating wafer being complete half-etching is fit together by adhesive glue and surface sound filtering chip wafer, thus being formed over cavity at chip induction region；
Step 5, thinning
Referring to Figure 14, laminating wafer is ground, is thinned to the position of laminating wafer half-etching, to expose perforate；
Step 6, buried via hole
Referring to Figure 15, imbed in perforate with conducting resinl or plated metal；
Step 7, prepares the second metal level
Referring to Figure 16, by cleaning, baking, sputtering, resist coating, photoetching, development, copper electroplating layer, photoresist of delustering, the method for etching prepares the second metal level on the surface of conducting resinl or plated metal；
Step 8, plant ball
Referring to Figure 17, carry out planting ball at the second layer on surface of metal；
Step 9, cutting
Referring to Figure 18, cutting is divided into single product.
In above-mentioned steps, step 8 can be omitted.
In addition to the implementation, present invention additionally comprises the technical scheme that other embodiments, all employing equivalents or equivalence substitute mode are formed, all should fall within the protection domain of the claims in the present invention.
Claims (5)
1. the manufacture method etching buried via hole type surface sound filtering chip encapsulating structure, it is characterised in that described method comprises the following steps that:
Step one, take a piece of surface sound filtering chip wafer；
Step 2, prepare the first metal layer at the electrode zone of surface sound filtering chip wafer；
Step 3, prepare insulating barrier
Being coated with one layer of certain thickness insulating cement on the sound filtering chip wafer of surface with coating technique, with photoetching, the insulating cement of electrode zone and chip induction region position is removed by the method for development；
Step 4, laminating wafer perforate are also fitted
Take a piece of laminating wafer, first the position that laminating wafer corresponds to above the electrode of surface sound filtering chip wafer is carried out perforate, then the laminating wafer being complete perforate is fit together by adhesive glue and surface sound filtering chip wafer, thus being formed over cavity at chip induction region；
Step 5, buried via hole
Imbed in perforate with conducting resinl or plated metal；
Step 6, prepares the second metal level
In step 5 perforate, the second metal level is prepared on the conducting resinl of embedment or the surface of plated metal；
Step 7, cutting
Cutting is divided into single product.
2. the manufacture method etching buried via hole type surface sound filtering chip encapsulating structure, it is characterised in that described method comprises the following steps that:
Step one, take a piece of surface sound filtering chip wafer；
Step 2, prepare the first metal layer at the electrode zone of surface sound filtering chip wafer；
Step 3, prepare insulating barrier
Being coated with one layer of certain thickness insulating cement on the sound filtering chip wafer of surface with coating technique, with photoetching, the insulating cement of electrode zone and chip induction region position is removed by the method for development；
Step 4, half-etching laminating wafer are also fitted
Take a piece of laminating wafer, first the position planting ball is needed to carry out half-etching perforate by follow-up for wafer of fitting, then the laminating wafer being complete half-etching is fit together by adhesive glue and surface sound filtering chip wafer, thus being formed over cavity at chip induction region；
Step 5, thinning
Laminating wafer is ground, is thinned to the position of laminating wafer half-etching, to expose perforate；
Step 6, buried via hole
Imbed in perforate with conducting resinl or plated metal；
Step 7, prepares the second metal level
In step 6 perforate, the second metal level is prepared on the conducting resinl of embedment or the surface of plated metal；
Step 8, cutting
Cutting is divided into single product.
3. a kind of manufacture method etching buried via hole type surface sound filtering chip encapsulating structure according to claim 1 and 2, it is characterised in that: between step 7 and step 8, it is possible to carry out planting ball at the second layer on surface of metal.
4. a kind of manufacture method etching buried via hole type surface sound filtering chip encapsulating structure according to claim 1 and 2, it is characterised in that: described insulating barrier adopts B-stage glue, it may be unnecessary to is coated with adhesive glue on laminating wafer, is made directly laminating.
5. a kind of manufacture method etching buried via hole type surface sound filtering chip encapsulating structure according to claim 1 and 2, it is characterised in that: described laminating wafer adopts glass material, insulant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610202597.7A CN105742195A (en) | 2016-04-01 | 2016-04-01 | Manufacturing method for etching buried hole-type surface sound filter chip packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610202597.7A CN105742195A (en) | 2016-04-01 | 2016-04-01 | Manufacturing method for etching buried hole-type surface sound filter chip packaging structure |
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| CN105742195A true CN105742195A (en) | 2016-07-06 |
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| CN201610202597.7A Pending CN105742195A (en) | 2016-04-01 | 2016-04-01 | Manufacturing method for etching buried hole-type surface sound filter chip packaging structure |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106301283A (en) * | 2016-11-07 | 2017-01-04 | 无锡吉迈微电子有限公司 | The encapsulating structure of SAW filter and manufacture method |
| CN109461661A (en) * | 2018-09-21 | 2019-03-12 | 中国科学院上海微***与信息技术研究所 | Filter package structure and its packaging method |
| CN113691233A (en) * | 2021-08-27 | 2021-11-23 | 中国电子科技集团公司第二十六研究所 | High-reliability wafer-level packaged acoustic surface filter structure and preparation method thereof |
| CN114696776A (en) * | 2022-03-25 | 2022-07-01 | 象朵创芯微电子(苏州)有限公司 | Wafer-level packaging method of surface acoustic wave filter and surface acoustic wave filter |
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| US20080299706A1 (en) * | 2007-06-01 | 2008-12-04 | Samsung Electro-Mechanics Co., Ltd. | Wafer level package fabrication method |
| CN101496162A (en) * | 2005-04-01 | 2009-07-29 | 斯盖沃克斯瑟路申斯公司 | Wafer level package including a device wafer integrated with a passive component |
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2016
- 2016-04-01 CN CN201610202597.7A patent/CN105742195A/en active Pending
Patent Citations (4)
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| CN1565078A (en) * | 2002-07-31 | 2005-01-12 | 株式会社村田制作所 | Piezoelectric component and production method therefor |
| US6777263B1 (en) * | 2003-08-21 | 2004-08-17 | Agilent Technologies, Inc. | Film deposition to enhance sealing yield of microcap wafer-level package with vias |
| CN101496162A (en) * | 2005-04-01 | 2009-07-29 | 斯盖沃克斯瑟路申斯公司 | Wafer level package including a device wafer integrated with a passive component |
| US20080299706A1 (en) * | 2007-06-01 | 2008-12-04 | Samsung Electro-Mechanics Co., Ltd. | Wafer level package fabrication method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106301283A (en) * | 2016-11-07 | 2017-01-04 | 无锡吉迈微电子有限公司 | The encapsulating structure of SAW filter and manufacture method |
| CN109461661A (en) * | 2018-09-21 | 2019-03-12 | 中国科学院上海微***与信息技术研究所 | Filter package structure and its packaging method |
| CN113691233A (en) * | 2021-08-27 | 2021-11-23 | 中国电子科技集团公司第二十六研究所 | High-reliability wafer-level packaged acoustic surface filter structure and preparation method thereof |
| CN114696776A (en) * | 2022-03-25 | 2022-07-01 | 象朵创芯微电子(苏州)有限公司 | Wafer-level packaging method of surface acoustic wave filter and surface acoustic wave filter |
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Application publication date: 20160706 |
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