CN105742189B - 一种氧化物半导体薄膜晶体管的制备方法 - Google Patents
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Abstract
一种氧化物半导体薄膜晶体管的制备方法,所述氧化物半导体薄膜晶体管包括基板、栅介质层、沟道层、源电极和漏电极,其制备方法包括以下步骤:⑴基板清洗;⑵栅介质层制备;⑶沟道层的制备;⑷源电极和漏电极的制备。本发明工艺合理,简单合理,同时制备的氧化物半导体薄膜晶体管对载流子具有良好抑制能力,提高器件和电路的可靠性,并简化了阈值电压补偿电路设计的复杂性,而且,有利于在低温下形成非晶态的薄膜,有利于保证器件制备的一致性、改善通过低温工艺制造的器件的稳定性。
Description
技术领域
本发明涉及晶体管的技术领域,具体涉及一种氧化物半导体薄膜晶体管的制备方法。
背景技术
随着信息时代的到来,显示器件正加速向平板化、节能化的方向发展,其中以薄膜晶体管为开关元件的有源阵列驱动显示器件成为众多平板显示技术中的佼佼者。而在过去很长的时间里,一直采用的都是和 CMOS工艺兼容的硅系材料。
在近十几年时间,以硅材料(非晶硅和多晶硅)TFT为驱动单元的液晶显示器件以其体积小、重量轻、品质高等优点获得了迅速发展,并成为主流的信息显示终端。然而,非晶硅存在场效应迁移率低、光敏性强以及材料不透明等缺点,而多晶硅TFT大面积制作工艺复杂、低温工艺难以实现。而且多晶硅由于不能低温制备而不适用于不耐高温的衬底。因此以金属氧化物半导体作为薄膜晶体管的有源层材料,由于其高迁移率,低沉积温度以及透明的光学特性被视为下一代的显示背板技术。
发明内容
本发明的目的是提供一种制备工艺简单、高迁移率、透明性好的氧化物半导体薄膜晶体管的制备方法。本发明是通过以下技术方案来实现的:
一种氧化物半导体薄膜晶体管的制备方法,所述氧化物半导体薄膜晶体管包括基板、栅介质层、沟道层、源电极和漏电极,其制备方法包括以下步骤:
⑴基板清洗:将基板用18~25%的氟化氢水溶液浸泡1~2min,然后用去离子水冲洗,冲洗完后加入水、过氧化氢和氨水的混合溶液中,蒸煮10~15min,温度控制在75℃~85℃,用去离子水冲洗后加入到水、过氧化氢和盐酸的混合溶液中,蒸煮10~15min,温度控制在75℃~85℃,用去离水冲洗后再用氮气吹干;
⑵栅介质层制备:将氮化炉温度上升至1300℃~1400℃,然后通氮气排杂,排杂的时间为15~20min,再通入纯氮气,然后将步骤⑴所得基板推入氮化炉中,氮化3~4h,冷却后将氮化后的所得物取出,用20~25%的氟化氢溶液清洗,再用去离子水冲洗后烘干,备用;
⑶沟道层的制备:利用射频磁控溅射法在栅介质层上制备氧化锌薄膜;
⑷源电极和漏电极的制备:通过真空镀膜的方法在步骤⑶制备的沟道层两侧形成源电极和漏电极,所述真空镀膜过程中真空度小于5×10-3Pa。
进一步地,所述基板为硅基板。
进一步地,所述栅介质层为氮化硅。
进一步地,所述源电极和漏电极为金属铝薄膜。
进一步地,所述步骤⑴和⑵中,去离子水冲洗过程为若干次,直至冲洗后的去离子水PH值为7~8,结束冲洗过程。
进一步地,所述沟道层中还掺杂有镓、硅、铝、镁、钽、铪、镍、锆、锡、磷、钒、砷、钛、铅、钾或镧系稀土元素中的任意一种或两种以上的任意组合。
本发明的有益效果是:本发明工艺合理,简单合理,同时制备的氧化物半导体薄膜晶体管对载流子具有良好抑制能力,提高器件和电路的可靠性,并简化了阈值电压补偿电路设计的复杂性,而且,有利于在低温下形成非晶态的薄膜,有利于保证器件制备的一致性、改善通过低温工艺制造的器件的稳定性。
具体实施方式
下面结合实施例对本发明做进一步地说明。
实施例1
一种氧化物半导体薄膜晶体管的制备方法,所述氧化物半导体薄膜晶体管包括基板、栅介质层、沟道层、源电极和漏电极,其制备方法包括以下步骤:
⑴基板清洗:将硅基板用18%的氟化氢水溶液浸泡1min,然后用去离子水冲洗,冲洗完后加入水、过氧化氢和氨水的混合溶液中,蒸煮10min,温度控制在75℃,用去离子水冲洗后加入到水、过氧化氢和盐酸的混合溶液中,蒸煮10min,温度控制在75℃,用去离水冲洗后再用氮气吹干;
⑵栅介质层制备:将氮化炉温度上升至1300℃,然后通氮气排杂,排杂的时间为15min,再通入纯氮气,然后将步骤⑴所得基板推入氮化炉中,氮化3h,冷却后将氮化后的所得物取出,用20%的氟化氢溶液清洗,再用去离子水冲洗后烘干,备用;
⑶沟道层的制备:利用射频磁控溅射法在栅介质层上制备氧化锌薄膜;
⑷源电极和漏电极的制备:通过真空镀膜的方法在步骤⑶制备的沟道层两侧形成源电极和漏电极,所述真空镀膜过程中真空度为5×10-3Pa。
实施例2
一种氧化物半导体薄膜晶体管的制备方法,所述氧化物半导体薄膜晶体管包括基板、栅介质层、沟道层、源电极和漏电极,其制备方法包括以下步骤:
⑴基板清洗:将硅基板用20%的氟化氢水溶液浸泡1.5min,然后用去离子水冲洗,冲洗完后加入水、过氧化氢和氨水的混合溶液中,蒸煮12min,温度控制在80℃,用去离子水冲洗后加入到水、过氧化氢和盐酸的混合溶液中,蒸煮12min,温度控制在80℃,用去离水冲洗后再用氮气吹干;
⑵栅介质层制备:将氮化炉温度上升至1350℃,然后通氮气排杂,排杂的时间为18min,再通入纯氮气,然后将步骤⑴所得基板推入氮化炉中,氮化3.5h,冷却后将氮化后的所得物取出,用22%的氟化氢溶液清洗,再用去离子水冲洗后烘干,备用;
⑶沟道层的制备:利用射频磁控溅射法在栅介质层上制备氧化锌薄膜;
⑷源电极和漏电极的制备:通过真空镀膜的方法在步骤⑶制备的沟道层两侧形成源电极和漏电极,所述真空镀膜过程中真空度为5×10-3Pa。
实施例3
一种氧化物半导体薄膜晶体管的制备方法,所述氧化物半导体薄膜晶体管包括基板、栅介质层、沟道层、源电极和漏电极,其制备方法包括以下步骤:
⑴基板清洗:将硅基板用25%的氟化氢水溶液浸泡2min,然后用去离子水冲洗,冲洗完后加入水、过氧化氢和氨水的混合溶液中,蒸煮15min,温度控制在85℃,用去离子水冲洗后加入到水、过氧化氢和盐酸的混合溶液中,蒸煮15min,温度控制在85℃,用去离水冲洗后再用氮气吹干;
⑵栅介质层制备:将氮化炉温度上升至1400℃,然后通氮气排杂,排杂的时间为20min,再通入纯氮气,然后将步骤⑴所得基板推入氮化炉中,氮化4h,冷却后将氮化后的所得物取出,用25%的氟化氢溶液清洗,再用去离子水冲洗后烘干,备用;
⑶沟道层的制备:利用射频磁控溅射法在栅介质层上制备氧化锌薄膜;
⑷源电极和漏电极的制备:通过真空镀膜的方法在步骤⑶制备的沟道层两侧形成源电极和漏电极,所述真空镀膜过程中真空度为5×10-3Pa。
本发明工艺合理,简单合理,同时制备的氧化物半导体薄膜晶体管对载流子具有良好抑制能力,提高器件和电路的可靠性,并简化了阈值电压补偿电路设计的复杂性,而且,有利于在低温下形成非晶态的薄膜,有利于保证器件制备的一致性、改善通过低温工艺制造的器件的稳定性。
Claims (6)
1.一种氧化物半导体薄膜晶体管的制备方法,其特征在于:所述氧化物半导体薄膜晶体管包括基板、栅介质层、沟道层、源电极和漏电极,其制备方法包括以下步骤:
⑴基板清洗:将基板用18~25%的氟化氢水溶液浸泡1~2min,然后用去离子水冲洗,冲洗完后加入水、过氧化氢和氨水的混合溶液中,蒸煮10~15min,温度控制在75℃~85℃,用去离子水冲洗后加入到水、过氧化氢和盐酸的混合溶液中,蒸煮10~15min,温度控制在75℃~85℃,用去离水冲洗后再用氮气吹干;
⑵栅介质层制备:将氮化炉温度上升至1300℃~1400℃,然后通氮气排杂,排杂的时间为15~20min,再通入纯氮气,然后将步骤⑴所得基板推入氮化炉中,氮化3~4h,冷却后将氮化后的所得物取出,用20~25%的氟化氢溶液清洗,再用去离子水冲洗后烘干,备用;
⑶沟道层的制备:利用射频磁控溅射法在栅介质层上制备氧化锌薄膜;
⑷源电极和漏电极的制备:通过真空镀膜的方法在步骤⑶制备的沟道层两侧形成源电极和漏电极,所述真空镀膜过程中真空度小于5×10-3Pa。
2.根据权利要求1所述一种氧化物半导体薄膜晶体管的制备方法,其特征在于:所述基板为硅基板。
3.根据权利要求1所述一种氧化物半导体薄膜晶体管的制备方法,其特征在于:所述栅介质层为氮化硅。
4.根据权利要求1所述一种氧化物半导体薄膜晶体管的制备方法,其特征在于:所述源电极和漏电极为金属铝薄膜。
5.根据权利要求1所述一种氧化物半导体薄膜晶体管的制备方法,其特征在于:所述步骤⑴和⑵中,去离子水冲洗过程为若干次,直至冲洗后的去离子水PH值为7~8,结束冲洗过程。
6.根据权利要求1所述一种氧化物半导体薄膜晶体管的制备方法,其特征在于:所述沟道层中还掺杂有镓、硅、铝、镁、钽、铪、镍、锆、锡、磷、钒、砷、钛、铅、钾或镧系稀土元素中的任意一种或两种以上的任意组合。
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