CN105734501A - Method for multi-level magnetic field arc ion plating and twin-target medium-frequency magnetron sputtering composite deposition - Google Patents
Method for multi-level magnetic field arc ion plating and twin-target medium-frequency magnetron sputtering composite deposition Download PDFInfo
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- CN105734501A CN105734501A CN201610300074.6A CN201610300074A CN105734501A CN 105734501 A CN105734501 A CN 105734501A CN 201610300074 A CN201610300074 A CN 201610300074A CN 105734501 A CN105734501 A CN 105734501A
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- magnetron sputtering
- ion plating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
Abstract
The invention discloses a method for multi-level magnetic field arc ion plating and twin-target medium-frequency magnetron sputtering composite deposition, and belongs to the technical field of surface treatment of materials. The invention aims to solve the problems of large-particle defect, low conventional magnetron sputtering ionization rate and deposition efficiency, and use limitation of a high-melting-point and difficult ionization target use of a low-melting-point pure metal (such as aluminum) or a multi-component alloy material (such as an aluminum-silicon alloy) and a non-metal material (such as graphite and semiconductor silicon and the like) in a conventional arc ion plating method. The method disclosed by the invention comprises: 1, putting a workpiece to be subjected to film plating on a sample stage in a vacuum chamber, and switching on a related power supply; and 2, performing film deposition: when the vacuum degree in the vacuum chamber is less than 10<-4>Pa, introducing a working gas, adjusting the gas pressure, switching on a film plating power supply, adjusting the energy of composite plasmas through a grid bias power supply at the same time, eliminating the large-particle defect and ensuring the transmission efficiency of arc plasmas through a multi-level magnetic field straight tube magnetic filtration device, and generating multi-component composite plasmas through a twin target so as to perform film deposition.
Description
Technical field
The present invention relates to multi-stage magnetic field arc ion plating and twin target medium frequency magnetron sputtering composite deposition method, belong to material
Technical field of surface.
Background technology
Arc ion plating (aip) can obtain the nearly all metal ion including carbon ion, simultaneously with high ionization
Rate, diffractive good, the advantage such as film-substrate cohesion is good, coating quality is good, deposition efficiency is high and equipment is easy and simple to handle and come into one's own,
It it is one of current physical vapour deposition (PVD) technology of preparing being used widely in the industry.It can be not only used for preparing metal and prevents
Protect coating, it is also possible to by the regulation of process, it is achieved the preparation of the high-temperature ceramic coating such as nitride, carbide, exist simultaneously
Also there is application in function film field.Even for the parts that shape is irregular, arc ion plating can also realize the fast of thin film
Speed deposition, even also serves as nanometer multilayer and superlattice film preparation method (Tay B K, Zhao Z W, Chua D H C.
Review of metal oxide films deposited by filtered cathodic vacuum arc
Technique [J]. Mater Sci Eng R, 2006,52 (1-3): 1-48.).But prepare thin at arc ion plating
During film, owing to arc speckle electric current density is up to 2.5 ~ 5 × 1010A/m2, cause the arc speckle position of target material surface to occur molten
The liquid metal melted, under the effect of local plasma pressure in droplets splash out, be attached to film surface or
Inlay in the film formed " bulky grain " (Macroparticles) defect (Wei Yongqiang, literary composition Zhenhua, Jiang Zhiqiang, Tian Xiubo.
The distribution research [J] in thin film prepared by arc ion plating of the bulky grain defect. vacuum, 2013,50 (6): 7-
10.).Just as the PM2.5 pollution to air quality, relative to the thin film that thickness rank is micron or submicron, size exists
The bulky grain defect of 0.1-10 micron has serious harm to quality and the performance of thin film.Along with thin-film material and thin film technique
That applies is increasingly extensive, and whether the solution of bulky grain defect problem becomes the bottleneck that arc ions electroplating method develops further, sternly
Heavily constrain its application in a new generation's thin-film material preparation.The way of Magnetic filter is the most generally used to filter out bulky grain,
If Chinese patent is for plasma immersion and ion implantation device (publication number: CN1150180, the publication date of material surface modifying
Phase: on May 21st, 1997) in use 90 ° of magnetic filters the bulky grain of pulsed cathode arc is filtered, American scholar
Anders et al. (Anders S, Anders A, Dickinson M R, MacGill R A, Brown I G. S-
shaped magnetic macroparticle filter for cathodic arc deposition [J]. IEEE
Trans Plasma Sci, 1997,25 (4): 670-674.) in article, make " S " magnetic filter to cathode arc
Bulky grain filters, although these methods have certain effect in terms of bulky grain filtering and eliminate, but the biography of plasma
Defeated loss in efficiency is serious, makes ion current density be substantially reduced.Based on filtering on the basis of bulky grain can guarantee that efficiency again, in
State's patent vacuum cathode arc straight tube filter (publication number: CN1632905, publication date: on June 29th, 2005) proposes straight tube
The method filtered, but which in turn reduces filter effect, and research worker relevant afterwards also proposed multi-stage magnetic field straight tube magnetic mistake
Filter method (Wei Yongqiang, Zong Xiaoya, Jiang Zhiqiang, literary composition Zhenhua, Chen Liangji. multi-stage magnetic field straight tube Magnetic filter and pulsed bias
Compound arc ions electroplating method, Zl 2013102267544.) find that arc ion plating plasma passes through magnetic filter
After can keep high efficiency of transmission and eliminate bulky grain.
Originally magnetron sputtering technique uses direct current supply pattern, compared to arc ions electroplating method, does not has bulky grain defect,
Can realize the low-temperature sputter deposition of various material, but the ionization level of its sputter material is the lowest, the power density of sputtering target exists
50W/cm2, can not get enough ion populations during thin film deposition, cause deposition efficiency the lowest, be easily generated the phenomenon of " target poison ing ",
The energy that ion is carried simultaneously is relatively low, make Thin Film Tissue fine and close not (Chang Tianhai. the delayed effect in reaction magnetocontrol sputtering technique
[J] should be studied. vacuum and low temperature, 2003,9 (4): 7-10.).1999, the V. of Linkoping,Sweden university
Kouznetsov et al. (Kouznetsov V, Mac á k K, Schneider J M, Helmersson U, Petrov I.
A novel pulsed magnetron sputter technique utilizing very high target power
Densities [J]. Surf Coat Tech, 1999,122 (2-3): 290-293.) propose high power pulse magnetic control spatter
Penetrating technology (HPPMS), it utilizes higher pulse peak power and relatively low pulse width to improve the ionization level of sputter material,
Target cathode will not increase the requirement of target cooling because of overheated simultaneously.Its peak power improves compared to conventional DC magnetron sputtering
100 times, about 1000 ~ 3000W/cm2, the density of plasma reaches 1018m-3The order of magnitude, its central region ion concentration
Up to 1019m-3The order of magnitude, the ionization level of sputter material reaches as high as more than 90% simultaneously, and without the electricity the highest present off rate
Bulky grain defect in arc ion electroplating method.After 2008, each colleges and universities also begin to launch for high power pulse at home
The research of magnetron sputtering technique (Li Xiping. prepared by high power combined pulsed magnetron sputtering plasma characteristics and TiAlN thin film
[D];Harbin Institute of Technology, 2008. Wuzhongs shake, Zhu Zongtao, Gong Chunzhi, Tian Xiubo, Yang Shiqin, Li Xiping. and high
The development of Power Impulse Magnetron sputtering technology and research [J]. vacuum, 2009,46 (3): 18-22. and Mu Zongxin, Mu Xiao
East, Wang Chun, Jia Li, Dong Chuan. DC source coupling high power pulse non-balance magnetically controlled sputter ionization property [J]. physics
Journal, 2011,60 (1): 422-428.), but owing to the pulsed discharge of high-power impulse magnetron sputtering technology is unstable,
And target current potential is relatively low, target metal substantial amounts of metal ion after ionization is sucked back into target surface, fails to arrive matrix surface
Realize the deposition of thin film, cause the efficiency of thin film deposition to be substantially reduced, affect it and be further substituted with common magnetron sputtering and electric arc
The paces of ion plating, receive a definite limitation in terms of follow-up popularization and application.Although also having scholar to high power pulse magnetic control
The application of sputtering is improved, and such as Chinese patent high power combined pulsed magnetron sputtering ion implantation and deposition method is (public
The number of opening: CN101838795A, publication date: on JIUYUE 22nd, 2010) utilize high pressure and the impulsive synchronization coalignment that are proposed fill
Divide the advantage utilizing high-power impulse magnetron sputtering, it is achieved high-power impulse magnetron sputtering technology dashing forward at field ion implantation
Broken, but due to the restriction of high voltage power supply, the density arriving matrix surface depositing ions can not be the highest, otherwise can cause high-tension electricity
The damage in source.And twin target medium frequency magnetron sputtering technology obtains the alternating current of opposite in phase by alternating current power supply on double targets respectively
Pressure, replaces into anode and negative electrode, and stability that magnetron sputtering electric discharge run can be substantially improved, can avoid simultaneously target surface because of
The charge accumulated that " target poison ing " produces, causes the problem that the sparking of target surface or anode disappear, and target as sputter rate is high, is current chemical combination
One of first-selected deposition process prepared by thing thin film magnetron sputtering (Li Fen, Zhu Ying, Li Liuhe, Lu Qiuyuan, Zhu Jianhao. magnetic control
Sputtering technology and development [J] thereof. vacuum electronics technology, 2011, (3): 49-54.).
At present, the simple metal of low melting point or multicomponent alloy material is being used to be easily generated greatly in order to solve arc ions electroplating method
There is the problem being difficult to ionization in grain defect and magnetron sputtering technique in terms of using high-melting-point target, extends existing arc ions
Plating and two kinds of methods of magnetron sputtering, in the respective limitation of target use, make full use of twin target medium frequency magnetron sputtering permissible
Low melting point metal material (such as aluminum) that sputtering sedimentation arc ions electroplating method should not use, multicomponent alloy material (such as aluminum silicon
Alloy), nonmetallic materials (such as graphite) and semi-conducting material (such as silicon) (Kelly, P. J., J. Hisek, Y.
Zhou, R. D. Pilkington, R. D. Arnell. Advanced Coatings Through Pulsed
Magnetron Sputtering. Surface Engineering, 2004,20 (3): 157-162. and Heister U,
Krempel-Hesse J, Szczyrbowski J, Teschner G, Bruch J, Bräuer G. TwinMag II:
Improving an advanced sputtering tool [J]. Vacuum, 2000,59 (2 3): 424-430.),
Utilize arc ions to be plated in high-melting-point and the advantage of difficult ionization target aspect use simultaneously, fill in conjunction with multi-stage magnetic field straight tube Magnetic filter
Put and bulky grain is eliminated and the guarantee of Plasma Transport efficiency, realize preparing the thin film of various material, component ratio and structure.
Summary of the invention
The invention aims to for solve conventional arc ion electroplating method is easily generated bulky grain defect, Magnetic filter technology is drawn
Play arc-plasma efficiency of transmission low and use the simple metal (such as aluminum) of low melting point or multicomponent alloy material (such as aluminum silicon closes
Gold), nonmetallic materials (such as graphite) and semi-conducting material (such as silicon) deposit in conventional arc ion electroplating method as target
Bulky grain, conventional magnetron sputtering technology ionization level and thin film deposition efficiency is low, high-melting-point target use limitation, with eutectic
The simple metal (such as aluminum) of point or multicomponent alloy material (such as alusil alloy) and nonmetallic materials (such as graphite and quasiconductor material
Material silicon etc.) as the target of twin target medium frequency magnetron sputtering, recycling arc ions electroplating method can produce continual and steady, high from
The plasma of rate, is eliminated the bulky grain contained in arc-plasma simultaneously and lacks by multi-stage magnetic field straight tube Magnetic filter method
Fall into, ensure that arc-plasma passes through defecator with higher efficiency of transmission simultaneously, make surface of the work apply back bias voltage
Situation can be continuous, fine and close prepare high-quality thin-film, realize simultaneously in thin film constituent content add control, reduce use alloy
The production cost of target, the deposition efficiency of raising thin film, minimizing discharge instability and bulky grain defect are to thin film growth and performance
Adverse effect, it is proposed that multi-stage magnetic field arc ion plating and twin target medium frequency magnetron sputtering composite deposition method.
The used device of the inventive method includes grid bias power supply 1, arc power 2, arc ion plating target source 3, multi-stage magnetic field dress
Put 4, twin target medium frequency magnetron sputtering power supply 5, twin target medium frequency magnetron sputtering target source 6, vacuum chamber 7, sample stage 8 and grid bias power supply
Kymographion 9；
The method comprises the following steps:
Step one, being placed on the sample stage 8 in vacuum chamber 7 by pending workpiece, workpiece connects the pulse output end of grid bias power supply 1,
Arc power 2 is connected in the arc ion plating target source 3 being arranged on vacuum chamber 7, and twin target medium frequency magnetron sputtering target source 6 connects in twin target
Frequently the high power pulse outfan of magnetron sputtering power supply 5；
Step 2, thin film deposition: by vacuum chamber 7 evacuation, treat that the vacuum in vacuum chamber 7 is less than 10-4During Pa, it is passed through work
Gas, to 0.01Pa～10Pa, opens grid bias power supply kymographion 9, carries out the waveform parameter of grid bias power supply 1 output in time
Adjust；
Open grid bias power supply 1, and regulate grid bias power supply 1 to export the magnitude of voltage of pulse be 0～1.2kV, pulse frequency be 0Hz～
80kHz, pulse width 1 ~ 90%；
Open arc power 2 and multi-stage magnetic field defecator 4, by the spots moving of the electric arc surface to arc ion plating target source 3
After being carried out, the technological parameter that regulation needs, the current value of arc power 2 output is 10 ~ 300A, by multi-stage magnetic field device 4
Keep arc-plasma in the stable generation in arc ion plating target source 3 and to carry out bulky grain defect filtering elimination, make electric arc etc.
Gas ions arrives matrix surface with higher efficiency of transmission by multi-stage magnetic field device 4, carries out the fast deposition of thin film；
Open twin target medium frequency magnetron sputtering power supply 5, adjust suitable output services power, after running voltage and operating current,
Make twin target medium frequency magnetron sputtering target source 6 build-up of luminance, surface, twin target medium frequency magnetron sputtering target source 6 is carried out, in twin target
Frequently the frequency 10 ~ 100kHz of magnetron sputtering power supply 5, operating power 0.1 ~ 150kW, operating current 15 ~ 240A, running voltage 20 ~
1000V, generally uses 40kHz, dutycycle 80%, then selects twin target intermediate frequency magnetic control according to target kind, size and depositing operation
The operating power of shielding power supply 5 output, running voltage and operating current, produce stable multiple elements design plasma.
According to the needs of film preparation, adjust relevant technological parameter and carry out simple metal thin film, the change of different element ratio
Compound ceramic membrane, function film and there is the high-quality thin-film of nanometer multilayer or gradient-structure prepare.
Advantages of the present invention: a. uses twin target medium frequency magnetron sputtering technology for the simple metal of low melting point or polynary conjunction
Gold copper-base alloy does not produce bulky grain defect, therefore need not defecator, it is possible to achieve the high efficiency of transmission of ionization ion；B. utilize
Twin target medium frequency magnetron sputtering technology, can use two kinds of different unit targets or unit and polynary and two kinds polynary
Targets etc. combine, it is achieved the plasma of multiple elements design produces, so can deposit various unit, polynary and type of compounds and
The thin film of different element ratios；C. arc ion plating target source can make up twin target medium frequency magnetron sputtering to high-melting-point target difficulty
Restriction in ionization, it is ensured that the high density of depositing ions persistently produces；D. multi-stage magnetic field magnetic filter can eliminate bulky grain
Defect also ensures the high efficiency of transmission of arc-plasma；E. owing to have employed pulsed bias Waveform output device, matrix can be made
Multiple elements design ion produced by effective attraction twin target medium frequency magnetron sputtering target source, it is ensured that film deposition rate, makes to sink
The energy of long-pending ion is greatly improved；F. by regulating the technological parameter in twin target medium frequency magnetron sputtering target source, in conjunction with arc ions
The technological parameter in plating target source, it is possible to achieve the ion ratio of various elements in compound plasma, it is achieved different element ratios
Thin film deposition；The microstructure and properties of the most prepared thin film can be adjusted by pulsed bias parameter, utilizes pulse inclined
Amplitude, pulse width and the frequency of pressure realize the pinning effect that thin film is grown by energetic ion, improve the crystal group of thin film growth
Knit and stress state, improve bond strength；H. the simple metal of low melting point is eliminated (such as due to twin target medium frequency magnetron sputtering
Aluminum) or multicomponent alloy material (such as alusil alloy) and nonmetallic materials (such as graphite and Semiconducting Silicon Materials etc.) electric arc from
Application in son plating limits, it is possible to achieve the originally interpolation of these elements and ratio adjustment thin in multi-element film preparation process
Film；I. prepared thin film avoids the bulky grain defect of low melting point element, and texture is finer and close, can carry further
The mechanical property of high thin film.
Step 3, can individually use Traditional DC magnetron sputtering, pulsed magnetron sputtering, twin target medium frequency magnetron sputtering,
Conventional arc ion plating, pulsed cathode arc or multi-stage magnetic field arc ion plating combine Dc bias, pulsed bias or DC pulse
Compound bias is compound carries out thin film deposition, prepares simple metal thin film, the different compound ceramic thin film of element ratio, function thin
Film and there is the high-quality thin-film of nanometer multilayer or gradient-structure.
Accompanying drawing explanation
Fig. 1 is multi-stage magnetic field arc ion plating of the present invention and twin target medium frequency magnetron sputtering composite deposition method sketch, Fig. 2
Timing chart for grid bias power supply.
Detailed description of the invention
Detailed description of the invention one: present embodiment, present embodiment multi-stage magnetic field electric arc are described below in conjunction with Fig. 1 and Fig. 2
Ion plating and twin target medium frequency magnetron sputtering the used device of composite deposition method include grid bias power supply 1, arc power 2, electric arc from
Son plating target source 3, multi-stage magnetic field device 4, twin target medium frequency magnetron sputtering power supply 5, twin target medium frequency magnetron sputtering target source 6, vacuum
Room 7, sample stage 8 and grid bias power supply kymographion 9；
The method comprises the following steps:
Step one, being placed on the sample stage 7 in vacuum chamber 7 by pending workpiece, workpiece connects the pulse output end of grid bias power supply 1,
The arc ion plating target source 3 being arranged on vacuum chamber 7 connects the outfan of arc power 2；Twin target medium frequency magnetron sputtering target source 6 connects twin
The outfan of raw target medium frequency magnetron sputtering power supply 5；
Step 2, thin film deposition: by vacuum chamber 7 evacuation, treat that the vacuum in vacuum chamber 7 is less than 10-4During Pa, it is passed through work
Gas is to 0.01Pa～10Pa；
Opening grid bias power supply 1, and regulate grid bias power supply 1 to export the peak voltage of pulse be 0～1.2kV, pulse frequency is 0Hz
～80kHz, pulse width 5 ~ 90%；
Open arc power 2 and multi-stage magnetic field defecator 4, by the spots moving of the electric arc surface to arc ion plating target source 3
After being carried out, the technological parameter that regulation needs, the current value of arc power 2 output is 10 ~ 300A, by multi-stage magnetic field device 4
Keep arc-plasma in the stable generation in arc ion plating target source 3 and to carry out bulky grain defect filtering elimination, make electric arc etc.
Gas ions arrives matrix surface with higher efficiency of transmission by multi-stage magnetic field device 4, carries out the fast deposition of thin film；
Open twin target medium frequency magnetron sputtering power supply 5, adjust suitable output services power, after running voltage and operating current,
Make twin target medium frequency magnetron sputtering target source 6 build-up of luminance, surface, twin target medium frequency magnetron sputtering target source 6 is carried out, in twin target
Frequently the frequency 10 ~ 100kHz of magnetron sputtering power supply 5, operating power 0.1 ~ 150kW, operating current 15 ~ 240A, running voltage 20 ~
1000V, generally uses 40kHz, dutycycle 80%, then selects twin target intermediate frequency magnetic control according to target kind, size and depositing operation
The operating power of shielding power supply 5 output, running voltage and operating current, produce stable multiple elements design plasma.
Grid bias power supply 1 output waveform is direct current, pulse, DC pulse is compound or multiple-pulse is combined.
Arc power 2 exports direct current, pulse, DC pulse is compound or multiple-pulse is combined.
Arc ion plating target source 3 uses high-melting-point or the simple metal of low melting point or multicomponent alloy material, twin target intermediate frequency magnetic
Control sputtering target source 6 uses the simple metal (such as aluminum) of low melting point or multicomponent alloy material (such as alusil alloy) and nonmetallic materials
(such as graphite and Semiconducting Silicon Materials etc.), it is possible to use single target, multiple target or composition target, carries out simple metal thin film, difference
The compound ceramic thin film of element ratio, function film, multi-component multi-layer, superlattices, there is the excellent of nanometer multilayer or gradient-structure
Matter thin film.
Working gas selects argon, or working gas selects one or more in nitrogen, acetylene, methane, silane or oxygen
Mixed gas, prepare simple metal thin film, the different compound ceramic thin film of element ratio, function film, multi-component multi-layer, super
Lattice, there is the thin film of nanometer multilayer or gradient-structure.
Multi-stage magnetic field arc ion plating and the proposition of twin target medium frequency magnetron sputtering composite deposition method, make full use of twin
Target medium frequency magnetron sputtering achieves the simple metal (such as aluminum) of low melting point or multicomponent alloy material (such as alusil alloy) and non-gold
Belong to the material (such as graphite and Semiconducting Silicon Materials etc.) application in arc ion plating, be prevented effectively from arc ion plating target and adopt
By bulky grain problem produced during low melting material, breach again nonmetallic materials (such as graphite and Semiconducting Silicon Materials etc.)
Application in arc ion plating limits, twin target can use two kinds of different unit targets or unit and polynary and
Two kinds of multicomponent target materials etc. combine, it is achieved the plasma of multiple elements design produces, deposition all kinds and the thin film of element ratio；With
Shi Liyong Waveform output device adjusts applied back bias voltage parameter on workpiece in time, is conducive to improving plasma between target base
Interval Potential Distributing, fully attracts compound plasma to workpiece motion s, it is achieved the fast deposition of thin film；The most also utilize electric arc
The metallic plasma lasting, ionization level is high is stablized in producing of ion plating technique, decreases high-melting-point, the metal material of difficult ionization
In twin target medium frequency magnetron sputtering use restriction, the highest ionization level ion at the chemosynthesis reaction of surface of the work,
Prepare the different compound ceramic thin film of element ratio, function film, multi-component multi-layer, superlattices and there is the thin film of gradient-structure
Or simple metal thin film.
Detailed description of the invention two: present embodiment is with the difference of embodiment one, and the method also includes:
Step 3, can individually use Traditional DC magnetron sputtering, pulsed magnetron sputtering, twin target medium frequency magnetron sputtering, tradition
It is compound that arc ion plating, pulsed cathode arc or multi-stage magnetic field arc ion plating combine Dc bias, pulsed bias or DC pulse
Bias carries out thin film deposition, prepares simple metal thin film, compound ceramic thin film, the function film of different element ratio and has
Nanometer multilayer or the high-quality thin-film of gradient-structure；
Step 2 can first use twin target medium frequency magnetron sputtering power supply 5 carry out magnetron sputtering and combine high-tension pulsed bias
Power supply carries out the pinning effect that thin film is grown by energetic ion, improves the adhesion of thin film and matrix, then carries out step 3, obtain
Obtain certain thickness thin film.
Detailed description of the invention three: present embodiment is with the difference of embodiment two, repeatedly perform step one to
Step 3, preparation has the multilayer films of different stress, microstructure and element ratio, other and embodiment two
Identical；
Step 2 can first use twin target medium frequency magnetron sputtering power supply 5 carry out magnetron sputtering combine high voltage carry out high energy from
The son pinning effect to thin film growth, improves the adhesion of thin film and matrix, then carries out step 3, the most repeatedly perform step
Two and step 3, the most repeatedly, preparation has the multilayer films of different stress, microstructure and element ratio.
Detailed description of the invention four: present embodiment is with the difference of embodiment one, repeatedly perform step one to
Step 3, preparation has the multilayer films of different stress, microstructure and element ratio, other and embodiment two
Identical.
Step 2 can use 2 sets or the 2 above arc ion plating target sources 3 of set and multi-stage magnetic field device 4 coordinate
Arc ion plating apparatus carries out the thin film deposition as target with various simple metal elements and multicomponent alloy material, then carries out step
Three, the most repeatedly perform step 2 and step 3, the most repeatedly, preparation has different stress, microstructure and element ratio
The multilayer films of example.
Claims (7)
1. multi-stage magnetic field arc ion plating and twin target medium frequency magnetron sputtering composite deposition method, it is characterised in that the method institute
Device is used to include that grid bias power supply 1, arc power 2, arc ion plating target source 3, multi-stage magnetic field device 4, twin target intermediate frequency magnetic control spatter
Radio source 5, twin target medium frequency magnetron sputtering target source 6, vacuum chamber 7, sample stage 8 and grid bias power supply kymographion 9；
The method comprises the following steps:
Step one, being placed on the sample stage 8 in vacuum chamber 7 by pending substrate work-piece, workpiece connects the outfan of grid bias power supply 1,
The arc ion plating target source 3 being arranged on vacuum chamber 7 connects the outfan of arc power 2, twin target medium frequency magnetron sputtering target source 6 connects twin
The high power pulse outfan of raw target medium frequency magnetron sputtering power supply 5；
Step 2, thin film deposition: by vacuum chamber 7 evacuation, treat that the vacuum in vacuum chamber 7 is less than 10-4During Pa, it is passed through work gas
Body, to 0.01Pa～10Pa, is opened grid bias power supply 1 and grid bias power supply kymographion 9, and is regulated the bias of grid bias power supply 1 output
Amplitude, pulse frequency and pulse width, it is 0～1.2kV that grid bias power supply 1 exports the peak voltage of pulse, and pulse frequency is 0Hz
～80kHz, pulse width 1 ~ 90%；
Open arc power 2 and multi-stage magnetic field defecator 4, by the spots moving of the electric arc surface to arc ion plating target source 3
After being carried out, the technological parameter that regulation needs, the current value of arc power 2 output is 10 ~ 300A, by multi-stage magnetic field device 4
Keep arc-plasma in the stable generation in arc ion plating target source 3 and to carry out bulky grain defect filtering elimination, make electric arc etc.
Gas ions arrives matrix surface with higher efficiency of transmission by multi-stage magnetic field device 4, carries out the fast deposition of thin film；
Open twin target medium frequency magnetron sputtering power supply 5, adjust suitable output services power, after running voltage and operating current,
Make twin target medium frequency magnetron sputtering target source 6 build-up of luminance, surface, twin target medium frequency magnetron sputtering target source 6 is carried out, in twin target
Frequently the frequency 10 ~ 100kHz of magnetron sputtering power supply 5, operating power 0.1 ~ 150kW, operating current 15 ~ 240A, running voltage 20 ~
1000V, generally uses 40kHz, dutycycle 80%, then selects twin target intermediate frequency magnetic control according to target kind, size and depositing operation
The operating power of shielding power supply 5 output, running voltage and operating current, produce stable multiple elements design plasma.
Multi-stage magnetic field arc ion plating the most according to claim 1 and twin target medium frequency magnetron sputtering composite deposition method,
It is characterized in that, the used device of the method also includes that grid bias power supply kymographion 9 is for showing the arteries and veins that grid bias power supply 1 sends
Rush voltage and current waveform, by adjusting the output waveform of grid bias power supply 1, plated film ion is effectively attracted, carries out thin
The deposition of film and control low melting point simple metal (such as aluminum) or multicomponent alloy material (such as alusil alloy) and nonmetallic materials (ratio
Such as Semiconducting Silicon Materials and nonmetallic materials graphite etc.) ratio in the film, it is achieved the regulation of plasma energy.
Multi-stage magnetic field arc ion plating the most according to claim 1 and twin target medium frequency magnetron sputtering composite deposition method,
It is characterized in that, grid bias power supply 1 export pulse be pulse, DC pulse is compound or multiple-pulse is combined.
Multi-stage magnetic field arc ion plating the most according to claim 1 and twin target medium frequency magnetron sputtering composite deposition method,
It is characterized in that, the method also includes:
Step 3, can individually use Traditional DC magnetron sputtering, pulsed magnetron sputtering, twin target medium frequency magnetron sputtering, tradition
It is compound that arc ion plating, pulsed cathode arc or multi-stage magnetic field arc ion plating combine Dc bias, pulsed bias or DC pulse
Bias carries out thin film deposition, prepares simple metal thin film, compound ceramic thin film, the function film of different element ratio and has
Nanometer multilayer or the high-quality thin-film of gradient-structure.
Multi-stage magnetic field arc ion plating the most according to claim 1 and twin target medium frequency magnetron sputtering composite deposition method,
It is characterized in that, repeatedly perform step one to step 2, prepare simple metal thin film, different element ratio compound ceramic thin
Film, function film and there is the high-quality thin-film of nanometer multilayer or gradient-structure.
Multi-stage magnetic field arc ion plating the most according to claim 1 and twin target medium frequency magnetron sputtering composite deposition method,
It is characterized in that, the target body material that twin target medium frequency magnetron sputtering target source 6 uses can be the simple metal (such as aluminum) of low melting point
Or multicomponent alloy target (such as alusil alloy), and arc ion plating target source 3 should not use nonmetal (such as graphite) and
Semi-conducting material (such as silicon), and arc ion plating target source 3 can be that to use magnetron sputtering technique to be difficult to the high-melting-point of ionization pure
Metal or multicomponent alloy material, it is also possible to effectively utilize multi-stage magnetic field device 4 to use conventional arc ion plating technique to be avoided
The simple metal of the low melting point used or multicomponent alloy target.
Multi-stage magnetic field arc ion plating the most according to claim 1 and twin target medium frequency magnetron sputtering composite deposition method,
It is characterized in that, working gas selects argon, or working gas is selected in nitrogen, acetylene, methane, silane or oxygen a kind of or many
The mixed gas planted, prepares simple metal thin film, compound ceramic thin film, the function film of different element ratio and has nanometer
Multilamellar or the high-quality thin-film of gradient-structure.
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