CN103579435A - GaN-based power-type light-emitting diode and manufacturing method thereof - Google Patents
GaN-based power-type light-emitting diode and manufacturing method thereof Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title abstract description 12
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 25
- 238000002161 passivation Methods 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 45
- 238000002360 preparation method Methods 0.000 claims description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims description 20
- 238000001312 dry etching Methods 0.000 claims description 19
- 238000005516 engineering process Methods 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- 238000001039 wet etching Methods 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 230000001788 irregular Effects 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
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- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
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- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- DKAGJZJALZXOOV-UHFFFAOYSA-N hydrate;hydrochloride Chemical compound O.Cl DKAGJZJALZXOOV-UHFFFAOYSA-N 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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Abstract
The invention provides a GaN-based power-type light-emitting diode which comprises a substrate, a buffering layer, an n-type gallium nitride layer, a quantum well layer, a p-type gallium nitride layer and a transparent current expanding layer. The buffering layer, the n-type gallium nitride layer, the quantum well layer, the p-type gallium nitride layer and the transparent current expanding layer are sequentially prepared on the substrate. The n-type gallum nitride layer is connected with an n-type metal electrode, the transparent current expanding layer is connected with a p-type metal electrode, a passivation protecting layer is also arranged on the uppermost layer of a light-emitting diode, and the surface of the transparent current expanding layer is provided with a micro-structure enabling the surface of the transparent current expanding layer to be roughened. The invention further provides a corresponding manufacturing method of the GaN-based power-type light-emitting diode. The GaN-based power-type light-emitting diode and the manufacturing method thereof can improve the current injection efficiency and the chip light-output efficiency of the GaN-based power-type light-emitting diode, simplify the technological conditions required by manufacturing of the GaN-based power-type light-emitting diode, enable the manufacturing process to be easily controlled, and reduce the manufacturing cost at the same time.
Description
Technical field
The present invention relates to light-emitting diode, particularly, relate to a kind of GaN based power type light-emitting diode (LED) and preparation method thereof, especially a kind of surface has light-emitting diode and the manufacture method thereof of alligatoring micro-structural.
Background technology
Light-emitting diode (LED) has the advantages such as electro-optical efficiency is high, energy-saving and environmental protection, the life-span is long, volume is little, and LED-based semiconductor lighting is considered to 21st century and most possibly enters one of a kind of novel solid cold light source in general lighting field and high-technology field most with prospects.
The key of semiconductor lighting extensive use is to improve internal quantum efficiency and the light extraction efficiency of nitride LED chip.The internal quantum efficiency of LED chip depends primarily on quality and the epitaxial structure of epitaxial material, and light extraction efficiency is main relevant with chip structure.Therefore, need to remove to improve from aspects such as material, epitaxial structure, chip surface, side and the back side forms internal quantum efficiency and the light extraction efficiency of LED chip.Surface coarsening is one of effective ways that improve light-emitting diode light extraction efficiency.At present, be generally when growing p-type gallium nitride semiconductor layers, change growth temperature, in epi-layer surface, form a series of pits centered by dislocation line, thereby reach the effect of surface coarsening.Take by the graph substrate of industry-wide adoption (Patterned Sapphire Substrate, PSS) is example, adopts the epitaxial wafer of PSS substrate growth, and its chip light-emitting efficiency exceeds 20-40% than planar substrate sheet chip.Yet, for the epitaxial layer of gallium nitride of growing on graphical sapphire substrate, because crystal mass is better, epitaxy defect is less, therefore be difficult to make the epi-layer surface coarse injustice that becomes by changing growth temperature, this causes the complicated process of preparation of the epitaxial wafer of current PSS substrate growth, controls difficulty large, and cost is high.
Summary of the invention
For overcoming existing defect, the present invention proposes the preparation method that a kind of process conditions are simple, cost of manufacture is low, processing procedure holds manageable GaN based power type light-emitting diode (LED) chip.
According to an aspect of the present invention; a kind of GaN based power type light-emitting diode has been proposed; comprise substrate, prepare resilient coating, N-shaped gallium nitride, quantum well, p-type gallium nitride and the transparent current extending on described substrate successively; described N-shaped gallium nitride connects N-shaped metal electrode; described transparent current extending connects p-type metal electrode; the superiors of described light-emitting diode also have passivation protection layer, and the surface of described transparent current extending has the micro-structural that makes surface coarsening.
Wherein, described transparent current extending is the oxidizability transparent conductive film of tin-doped indium oxide film or the doping of other the 3rd major element.
Wherein, surperficial micro-structural rule or random the arranging of described transparent current extending.
Wherein, the surperficial micro-structural of described transparent current extending is the lens pillar raised, semi-spherical micro-structural that adopts photoresist mask dry etching technology formation rule or irregular alignment.
Wherein, the surperficial micro-structural of described transparent current extending is the hemispherical depression micro-structural that adopts photoresist mask dry etching technology formation rule or irregular alignment.
Wherein, the surperficial micro-structural of described transparent current extending is to adopt to form unsetting micro-structural without single-layer dielectric film mask corrosion under etching condition.
According to a further aspect in the invention, also provide a kind of preparation method of GaN based power type light-emitting diode, comprised the following steps:
1) on substrate, prepare successively resilient coating, N-shaped gallium nitride, quantum well, p-type gallium nitride and transparent current extending;
2) at transparent current extending, prepare the micro-structural of the surface coarsening of sening as an envoy to;
3) preparation connects the N-shaped metal electrode of described N-shaped gallium nitride, connects the p-type metal electrode of described transparent current extending, and the passivation protection layer that is positioned at the superiors of described light-emitting diode.
Wherein, described step 2) in, the lens pillar raised, semi-spherical micro-structural of employing photoresist mask dry etching technology formation rule or irregular alignment.
Wherein, described step 2) in, the hemispherical depression micro-structural of employing photoresist mask dry etching technology formation rule or irregular alignment.
Wherein, described step 2) in, adopt and form unsetting micro-structural without single-layer dielectric film mask corrosion under etching condition.
Wherein, described step 2) in, described single-layer dielectric film mask is SiO
2film or SiN
xmask.
Wherein, described step 2), in, the method by chemical vapour deposition (CVD) (PECVD) deposits described SiO
2film or SiN
xmask.
Wherein, described step 2) in, adopt FeCl
3: the mixed liquor of HCl, the mixed solution of nitric acid, hydrochloric acid and water, or dilute hydrochloric acid solution is as wet etching liquid.
Compared with prior art, the present invention has following technique effect: the present invention is when improving the electric current injection efficiency and chip light-emitting efficiency of GaN based power type light-emitting diode, can simplify GaN based power type light-emitting diode and prepare required process conditions, processing procedure is easily controlled, reduced cost of manufacture simultaneously.
Accompanying drawing explanation
Fig. 1 a is that the present invention adopts layer at transparent layer that dry etching technology is made to have the lenticular raised microstructure LED chip schematic diagram that makes progress;
Fig. 1 b is that the layer at transparent layer that the present invention adopts dry etching technology to make has hemispherical to lower recess micro-structural LED chip schematic diagram;
Fig. 1 c is the main processing procedure schematic diagram that the present invention adopts the layer at transparent layer micro-structural of dry etching technology making;
To be the present invention have unsetting micro-structural LED chip schematic diagram without the layer at transparent layer of mask wet etching fabrication techniques to Fig. 2 a;
Fig. 2 b is that the present invention adopts the main processing procedure schematic diagram without the unsetting micro-structural of mask wet etching fabrication techniques layer at transparent layer;
Fig. 3 is the embodiment chip schematic diagram of the present invention's integrality of protecting metal electrode region transparency electrode when preparing surface micro-structure.
Fig. 4 shows LED luminance raising effect before and after alligatoring and voltage with the changing trend diagram of alligatoring etching time.
Description of reference numerals: 100: epitaxial loayer substrate; 101: gallium nitride low temperature buffer layer; 102:n type gallium nitride semiconductor layers;
103: Multiple Quantum Well active layer; 104:p type gallium nitride semiconductor layers; 105: transparent current extending;
106:p type metal electrode weld pad; 107:n type metal electrode weld pad; 108: chip passivation protective layer;
200: epitaxial substrate; 201: transparent conductive film; 202: dry etching or wet etching mask layer.
Embodiment
Below in conjunction with the drawings and specific embodiments, the preparation method of a kind of GaN based power type light-emitting diode provided by the invention (LED) chip is described in detail.
Embodiment mono-
According to following processing procedure, prepare the layer at transparent layer shown in Fig. 1 a and there is the lenticular raised microstructure LED chip that makes progress:
1, provide a growth substrate, as Sapphire Substrate;
2, grown buffer layer, the first semiconductor layer (N-shaped), quantum well active layer electronic barrier layer, the second semiconductor layer (p-type) successively in Sapphire Substrate, its growth pattern is metallochemistry vapour deposition process;
3, utilize acidity or alkali electroless medicine, epitaxial substrate is carried out to chemical cleaning;
4, by techniques such as photoresist mask, plasma (ICP) dry etchings, on epitaxial substrate, etch the MESA step of exposed the first semiconductor layer;
5, adopt electron beam evaporation equipment evaporation one deck ITO transparent conductive film on LED epitaxial wafer, ITO full name is Indium tin oxide, Chinese translation tin-doped indium oxide, the thickness of ITO transparent conductive film changes according to lambda1-wavelength and ITO refractive index, can determine by following formula:
In above formula, λ is lambda1-wavelength, and n is the refractive index of ito thin film, and m is integer, and t is the thickness of ito thin film.
6, according to MESA etching figure, inwardly dwindle 3-7um and prepare ITO expansion figure, on ito thin film, prepare and there is lenticular to the micro-structural of upper process;
Wherein, the preparation of ITO micro-structural, step is as follows:
(a) the eurymeric photoresist that spin coating a layer thickness is 1-3um on the LED epitaxial wafer of deposition ITO transparent conductive film, then forms the circular pattern of periodic nanoscale level by electron beam lithography;
(b) figure photoetching being formed is placed on hot plate and toasts, and the 5min that refluxes at 140 ℃ of-150 ℃ of temperature, makes the height at circular pattern center on photoresist be greater than the height on both sides;
(c) adopt ICP lithographic technique to carry out etching to ITO transparent conductive film, by adjusting ICP etching technics parameter (as mixing gas component, reaction cavity pressure, ICP power/RF power), control ITO etch rate, on ITO transparency conducting layer, form protruding hemisphere figure;
(d) remove mask lithography glue;
7, at 500 ℃ of high temperature and N
2under atmosphere, ITO is annealed, annealing time is 30 minutes;
8, prepare metal electrode and weld pad;
9, metal electrode alloying;
10, preparation passivation protection layer.
For ease of understanding, Fig. 1 c shows the main processing procedure of the layer at transparent layer micro-structural that adopts dry etching technology making, first prepare the chip semi-finished product that epitaxial substrate 200, transparent conductive film 201, dry etching mask layer 202 form, by techniques such as exposure, backflow, figure transfers, can obtain the finished chip of transparent conductive film surface coarsening.
In the present embodiment, adopt photoresist mask, method formation rule or irregular columnar microstructure of arranging in photoresist rete with photoetching, and by methods such as high-temperature heating backflows, column structure is become be beneficial to the lens shape of bright dipping, then adopt dry etching technology that the figure on photoresist is transferred on transparent conductive film, thereby make transparent conductive film surface coarse language, and then improve chip light-emitting efficiency.
With reference to figure 1a, the GaN based power type light-emitting diode that said method is prepared, comprise epitaxial loayer substrate 100, prepare successively the gallium nitride low temperature buffer layer 101 on described substrate, N-shaped gallium nitride semiconductor layers 102, Multiple Quantum Well active layer 103, p-type gallium nitride semiconductor layers 104 and transparent current extending 105, on described N-shaped gallium nitride semiconductor layers 102, be prepared with N-shaped metal electrode weld pad 107(and can connect N-shaped metal electrode), on described transparent current extending 105, be prepared with p-type metal electrode weld pad 106(and can connect p-type metal electrode), the superiors of light-emitting diode also have chip passivation protective layer 108.The surface of described transparent current extending 105 has the micro-structural that makes surface coarsening.
Embodiment bis-
In the present embodiment, its operational method and embodiment mono-are identical, and when key is prepared by ITO micro-structural, the mask of employing is contrary with embodiment mono-reticle with reticle figure, for example, can adopt the reticle as shown in Fig. 1 c; Or use identical reticle, use the photoresist with embodiment mono-type opposite simultaneously, for example, embodiment mono-adopts eurymeric photoresist mask, and embodiment bis-adopts negative photoresist masks.Thus, obtain graphical effect completely contrary with embodiment mono-, thereby obtain layer at transparent layer, there is the hemispherical LED chip to lower recess micro-structural, as shown in Figure 1 b.
Embodiment tri-
It is a kind of based on without mask wet etching technology that the present embodiment provides, and the layer at transparent layer shown in construction drawing 2a has the method for unsetting micro-structural LED chip.2a by reference to the accompanying drawings, its implementation method is specific as follows:
1, provide a growth substrate, as Sapphire Substrate;
2, grown buffer layer, the first semiconductor layer (N-shaped), quantum well active layer electronic barrier layer, the second semiconductor layer (p-type) successively in Sapphire Substrate, its growth pattern is metallochemistry vapour deposition process;
3, with acidity or alkali electroless medicine, epitaxial substrate is carried out to chemical cleaning;
4, by techniques such as photoresist mask, plasma (ICP) dry etchings, on epitaxial substrate, etch the MESA step of exposed the first semiconductor layer;
5, adopt electron beam evaporation equipment evaporation one deck ITO transparent conductive film on LED epitaxial wafer, its thickness changes according to lambda1-wavelength and ITO refractive index, can determine by following formula:
In above formula, λ is lambda1-wavelength, and n is the refractive index of ito thin film, and m is integer, and t is the thickness of ito thin film.
6, according to MESA etching figure, inwardly dwindle 3-7um and prepare ITO expansion figure, form unsetting micro-structural;
Wherein, the preparation process of the unsetting micro-structural of ITO is as follows:
(a) adopt chemical plasma deposition (PECVD) method for manufacturing thin film thering is the loose SiO of epitaxial wafer surface deposition of ITO
2film; Its density can be adjusted by technological parameters such as depositing temperature, pressure, gas ratios;
(b) will be coated with SiO
2the epitaxial wafer of mask layer is soaked in the ITO etching solution of 40 ℃ and corrodes 2min;
(c) wafer after ITO corrosion is soaked to BOE etching solution, remove SiO
2mask layer;
At 500 ℃ of high temperature and N
2under atmosphere, ITO is annealed, annealing time is 30 minutes;
7, prepare metal electrode and weld pad;
8, metal electrode alloying;
9, preparation passivation protection layer.
Fig. 2 b has used the main processing procedure of the layer at transparent layer micro-structural that adopts dry etching technology making, first prepare the chip semi-finished product that epitaxial substrate 200, transparent conductive film 201, wet etching mask layer 202 form, carry out again wet etching, remove remaining mask layer, can obtain the finished chip of transparent conductive film surface coarsening.
The present embodiment is abandoned conventional photoresist mask processing procedure, only adopts the method for single-layer dielectric film mask wet etching, utilizes the wet etching feature different to different crystal orientations corrosion rate, in transparent conductive film surface corrosion, goes out the coarse structure without given shape.Adopt SiO
2mask method is prepared ITO surface coarsening structure, simple to operation, does not increase photoetching process, does not increase equipment and supplies consumption.
In the present embodiment, SiO
2mask also can be used SiN
xother mask such as mask replaces.SiN
xmask can adopt method (for example PECVD) deposition of chemical vapour deposition (CVD).Can adopt FeCl
3: the mixed liquor of HCl, the mixed solution of nitric acid, hydrochloric acid and water, or dilute hydrochloric acid solution is as wet etching liquid.
Embodiment tetra-
In embodiment mono-, two and three, ITO alligatoring micro-structural is all carried out on whole ITO surface, although this scheme can increase the contact area of metal electrode and ito thin film, and then the adhesiveness of increase electrode.But, so also easily cause chip voltage microlitre.Therefore, in order to promote under the prerequisite of chip light-emitting efficiency, reduce or eliminate the damage of preparation micro-structural process to the ITO of electrode zone, the integrality of the ITO in guard electrode region and propose the present embodiment four.3 its implementation methods are specific as follows by reference to the accompanying drawings:
According to the method for the present embodiment, can obtain the light-emitting diode of the micro-structural of amorphous surfaces shown in Fig. 2.Its implementation method is specific as follows by reference to the accompanying drawings:
1, provide a growth substrate, as Sapphire Substrate;
2, grown buffer layer, the first semiconductor layer (N-shaped), quantum well active layer electronic barrier layer, the second semiconductor layer (p-type) successively in Sapphire Substrate, its growth pattern is metallochemistry vapour deposition process;
3, utilize acidity or alkali electroless medicine to carry out chemical cleaning to epitaxial substrate;
4, by techniques such as photoresist mask, plasma (ICP) dry etchings, on epitaxial substrate, etch the MESA step of exposed the first semiconductor layer;
5, adopt electron beam evaporation equipment evaporation one deck ITO transparent conductive film on LED epitaxial wafer, its thickness changes according to lambda1-wavelength and ITO refractive index, can determine by following formula:
In above formula, λ is lambda1-wavelength, and n is the refractive index of ito thin film, and m is integer, and t is the thickness of ito thin film.
6,, according to MESA etching figure, inwardly dwindle 3-7um and prepare ITO expansion figure;
Wherein, on ito thin film surface, adopt the method for photoetching that metal electrode locality protection is got up, but the area of 0.5-1.5 times of metal pad of its protected area; In the situation for protection metal electrode region ITO described in shown in Fig. 3 being, schematic diagram prepared by surface micro-structure;
After metal electrode locality protection is got up, then carry out the preparation of ITO micro-structural, can adopt any method of embodiment mono-, two and three;
7, at 500 ℃ of high temperature and N
2under atmosphere, ITO is annealed, annealing time is 30 minutes;
8, prepare metal electrode and weld pad;
9, metal electrode alloying;
10, preparation passivation protection layer.
The influence curve of the technical scheme that Fig. 4 shows the present embodiment four to light-emitting diode luminance and voltage.Abscissa represents the time of alligatoring corrosion, and left side ordinate represents brightness percentage change, and right side ordinate represents the size that chip voltage changes.This curve shows, when coarsening time is increased to by 0.5min in the process of 2min, chip brightness increases with the increase of alligatoring etching time; And in this process, the voltage rising amplitude under chip 20mA drive current is less than 0.03V.That is,, when alligatoring promotes brightness, ito thin film alligatoring is less to the voltage influence of chip, thereby can obtain the raising of light extraction efficiency (lm/W).LOP is the abbreviation of English light output power, represents optical output power; VF is the abbreviation of forward volatage, represents the voltage under chip 20mA drive current.
Finally it should be noted that, above embodiment is only in order to describe technical scheme of the present invention rather than present technique method is limited, the present invention can extend to other modification, variation, application and embodiment in application, and therefore thinks that all such modifications, variation, application, embodiment are in spirit of the present invention and teachings.
Claims (14)
1. a GaN based power type light-emitting diode; comprise: substrate, prepare resilient coating, N-shaped gallium nitride, quantum well, p-type gallium nitride and the transparent current extending on described substrate successively; described N-shaped gallium nitride connects N-shaped metal electrode; described transparent current extending connects p-type metal electrode; the superiors of described light-emitting diode also have passivation protection layer, and the surface of described transparent current extending has the micro-structural that makes surface coarsening.
2. GaN based power type light-emitting diode according to claim 1, is characterized in that, described transparent current extending is the oxidizability transparent conductive film of tin-doped indium oxide film or the doping of other the 3rd major element.
3. GaN based power type light-emitting diode according to claim 1, is characterized in that, surperficial micro-structural rule or random the arranging of described transparent current extending.
4. GaN based power type light-emitting diode according to claim 1, it is characterized in that, the surperficial micro-structural of described transparent current extending is the lens pillar raised, semi-spherical micro-structural that adopts photoresist mask dry etching technology formation rule or irregular alignment.
5. GaN based power type light-emitting diode according to claim 1, is characterized in that, the surperficial micro-structural of described transparent current extending is the hemispherical depression micro-structural that adopts photoresist mask dry etching technology formation rule or irregular alignment.
6. GaN based power type light-emitting diode according to claim 1, is characterized in that, the surperficial micro-structural of described transparent current extending is to adopt to form unsetting micro-structural without single-layer dielectric film mask corrosion under etching condition.
7. a preparation method for GaN based power type light-emitting diode claimed in claim 1, is characterized in that, comprises the following steps:
1) on substrate, prepare successively resilient coating, N-shaped gallium nitride, quantum well, p-type gallium nitride and transparent current extending;
2) at transparent current extending, prepare the micro-structural of the surface coarsening of sening as an envoy to;
3) preparation connects the N-shaped metal electrode of described N-shaped gallium nitride, connects the p-type metal electrode of described transparent current extending, and the passivation protection layer that is positioned at the superiors of described light-emitting diode.
8. the preparation method of GaN based power type light-emitting diode according to claim 7, is characterized in that, described step 2) in, the lens pillar raised, semi-spherical micro-structural of employing photoresist mask dry etching technology formation rule or irregular alignment.
9. the preparation method of GaN based power type light-emitting diode according to claim 7, is characterized in that, described step 2) in, the hemispherical depression micro-structural of employing photoresist mask dry etching technology formation rule or irregular alignment.
10. the preparation method of GaN based power type light-emitting diode according to claim 7, is characterized in that, described step 2) in, adopt and form unsetting micro-structural without single-layer dielectric film mask corrosion under etching condition.
The preparation method of 11. GaN based power type light-emitting diodes according to claim 10, is characterized in that, described step 2) in, described single-layer dielectric film mask is SiO
2film or SiN
xmask.
The preparation method of 12. GaN based power type light-emitting diodes according to claim 11, is characterized in that, described step 2) in, the method by chemical vapour deposition (CVD) deposits described SiO
2film or SiN
xmask.
The preparation method of 13. GaN based power type light-emitting diodes according to claim 10, is characterized in that, described step 2) in, FeCl adopted
3: the mixed liquor of HCl, the mixed solution of nitric acid, hydrochloric acid and water, or dilute hydrochloric acid solution is as wet etching liquid.
14. according to the preparation method of the GaN based power type light-emitting diode described in any one in claim 7 ~ 13; it is characterized in that; step 2) before, adopt the method for photoetching that metal electrode locality protection is got up, its protected area is the area of 0.5-1.5 times of metal pad.
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