CN105688966A - Bismuth vanadate modified boron nitride nanosheet composite material and preparation method thereof - Google Patents
Bismuth vanadate modified boron nitride nanosheet composite material and preparation method thereof Download PDFInfo
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- CN105688966A CN105688966A CN201610037427.8A CN201610037427A CN105688966A CN 105688966 A CN105688966 A CN 105688966A CN 201610037427 A CN201610037427 A CN 201610037427A CN 105688966 A CN105688966 A CN 105688966A
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- 239000002135 nanosheet Substances 0.000 title claims abstract description 77
- 239000002131 composite material Substances 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 229910052797 bismuth Inorganic materials 0.000 title abstract 8
- -1 Bismuth vanadate modified boron nitride Chemical class 0.000 title abstract 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 88
- 229910052582 BN Inorganic materials 0.000 claims abstract description 74
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 38
- CMZUMMUJMWNLFH-UHFFFAOYSA-N sodium metavanadate Chemical compound [Na+].[O-][V](=O)=O CMZUMMUJMWNLFH-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000003054 catalyst Substances 0.000 claims abstract description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000001035 drying Methods 0.000 claims abstract description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 4
- 239000000725 suspension Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 29
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 24
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 22
- 238000006243 chemical reaction Methods 0.000 claims description 21
- RXPAJWPEYBDXOG-UHFFFAOYSA-N hydron;methyl 4-methoxypyridine-2-carboxylate;chloride Chemical compound Cl.COC(=O)C1=CC(OC)=CC=N1 RXPAJWPEYBDXOG-UHFFFAOYSA-N 0.000 claims description 18
- 239000011259 mixed solution Substances 0.000 claims description 18
- 238000002156 mixing Methods 0.000 claims description 18
- 239000012286 potassium permanganate Substances 0.000 claims description 15
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 11
- 235000010344 sodium nitrate Nutrition 0.000 claims description 11
- 239000004317 sodium nitrate Substances 0.000 claims description 11
- 235000011149 sulphuric acid Nutrition 0.000 claims description 11
- 239000001117 sulphuric acid Substances 0.000 claims description 11
- 239000000243 solution Substances 0.000 claims description 10
- 238000013019 agitation Methods 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 9
- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- 238000001914 filtration Methods 0.000 claims description 9
- 239000005457 ice water Substances 0.000 claims description 9
- 230000007935 neutral effect Effects 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 5
- 230000001699 photocatalysis Effects 0.000 abstract description 4
- 238000005286 illumination Methods 0.000 abstract description 3
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 3
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 abstract 3
- 239000000203 mixture Substances 0.000 abstract 2
- FBXVOTBTGXARNA-UHFFFAOYSA-N bismuth;trinitrate;pentahydrate Chemical compound O.O.O.O.O.[Bi+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O FBXVOTBTGXARNA-UHFFFAOYSA-N 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 238000004821 distillation Methods 0.000 abstract 1
- 230000005284 excitation Effects 0.000 abstract 1
- 238000001179 sorption measurement Methods 0.000 abstract 1
- 238000003756 stirring Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 8
- 230000005012 migration Effects 0.000 description 7
- 238000013508 migration Methods 0.000 description 7
- 238000000926 separation method Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000007146 photocatalysis Methods 0.000 description 3
- 239000011941 photocatalyst Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N iridium(IV) oxide Inorganic materials O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000006053 organic reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000013033 photocatalytic degradation reaction Methods 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/24—Nitrogen compounds
-
- B01J35/39—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
Abstract
The invention discloses a bismuth vanadate modified boron nitride nanosheet composite material. According to the bismuth vanadate modified boron nitride nanosheet composite material, bismuth vanadate is loaded onto boron nitride nanosheets which serve as a catalyst carrier, wherein the mole ratio of the boron nitride nanosheets to the bismuth vanadate is 1: (0.01 to 0.6). The invention also discloses a preparation method of the bismuth vanadate modified boron nitride nanosheet composite material. The preparation method comprises the steps of dissolving bismuth nitrate pentahydrate into a 10% nitric acid solution, then, adding the boron nitride nanosheets and sodium metavanadate into the solution so as to obtain a mixture solution, carrying out ultrasonic uniform stirring on the mixture solution, and then, carrying out drying by distillation in water bath; then, carrying out treatment in a muffle furnace, thereby obtaining the bismuth vanadate modified boron nitride nanosheet composite material. According to the composite material disclosed by the invention, by using that the boron nitride nanosheets have certain electronegativity due to nitrogen vacancies of the surfaces of the boron nitride nanosheets, photon-generated holes entrained by bismuth vanadate after illumination excitation are attracted so as to promote hole transporting, and then, the transport efficiency of photon-generated carriers is increased; in addition, the large specific surface area of the boron nitride nanosheets is beneficial to the improvement on the adsorption performance of a composite system, and then, the increase of photocatalytic efficiency is facilitated.
Description
Technical field
The invention belongs to inorganic environment-friendly catalysis material technical field, be specifically related to a kind of pucherite and modify boron nitride nanosheet composite, the preparation method that the invention still further relates to this composite。
Background technology
Photocatalitic Technique of Semiconductor is increasingly subject to the attention of people with its efficient feature, is used for solving problem of environmental pollution and solar energy conversion。Selection for high efficiency photocatalyst is the most important aspect of Photocatalitic Technique of Semiconductor, at present, nearly more than 200 kinds of quasiconductors can be used for light-catalyzed reaction, but, the application of most of photocatalysts of relatively low quantum efficiency and serious photoetch phenomena impair。Therefore, the separation efficiency how improving semiconductor light-catalyst photo-generate electron-hole is photocatalysis technology problem encountered to suppress its quick compound。Normal conditions, the crystal structure of catalyst, particle size, pattern, particular exposed crystal face and finishing (as, precious metal surface deposition, carbon nano tube modified, graphene modified and semiconductors coupling etc.) it is the important channel improving photo-generate electron-hole separation efficiency, but, these methods are all based on the transfer rate to improve light induced electron, but, the migration rate by improving photohole is out in the cold with the separation efficiency improving photo-generated carrier。At present, the migration rate changing photohole has two kinds of methods, first, design has band structure than the semiconductors coupling system joined, after system absorption photon energy is excited, hole can be realized and migrate to the valence band of another kind of quasiconductor from the valence band of a kind of quasiconductor, but the migration of this form can weaken the oxidability in hole。Another kind of method is (such as RuO in semiconductor light-catalyst finishing hole trapping agents2、NiO、IrO2Deng), whether this method is effective in the reaction of photolysis water hydrogen, but effectively have not been reported in the organic reaction of photocatalytic degradation, and therefore, the application of this kind of method has certain limitation。Developing a kind of novel method that effectively can promote photohole migration rate is improve another important channel of semiconductor light-catalyst photo-generated carrier separation efficiency。
Summary of the invention
It is an object of the invention to provide a kind of pucherite and modify boron nitride nanosheet composite, solving existing is all based on transfer rate to improve light induced electron, but by improving the migration rate of photohole to improve the separation efficiency unheeded problem of photo-generated carrier。
It is a further object to provide the preparation method that a kind of pucherite modifies boron nitride nanosheet composite。
The technical solution adopted in the present invention is, a kind of pucherite modifies boron nitride nanosheet composite, with boron nitride nanosheet for catalyst carrier, being carried on boron nitride nanosheet by pucherite, wherein the mol ratio of boron nitride nanosheet and pucherite is 1:0.01～0.6。
Another technical scheme of the present invention is, the preparation method that a kind of pucherite modifies boron nitride nanosheet composite, five water bismuth nitrate are dissolved in the salpeter solution that concentration is 10%, it is subsequently adding boron nitride nanosheet and sodium metavanadate obtains mixed solution, by mixed solution ultrasonic agitation uniformly in 80～100 DEG C of water bath methods；Be subsequently placed in Muffle furnace 300～600 DEG C process 0.5～5h, obtain pucherite modify boron nitride nanosheet composite。
The feature of the present invention also resides in,
The mass ratio of five water bismuth nitrate and nitric acid is 1:40～100。
Boron nitride nanosheet, five water bismuth nitrate mol ratio be 1:0.01～0.6。
The mol ratio of five water bismuth nitrate and sodium metavanadate is 1:1。
Boron nitride nanosheet obtains by the following method: the mixing of hexagonal boron nitride powder, sodium nitrate and concentrated sulphuric acid is placed in ice-water bath and is uniformly mixing to obtain suspension, potassium permanganate is slowly added in suspension, the continuously stirred reaction 0.5～1h of hydrogen peroxide is added after continuously stirred reaction 8～24h, question response terminate after by suspension centrifugal 10min when 3000rpm, by upper strata suspension micropore sucking filtration, deionized water wash, to neutral, obtains boron nitride nanosheet after drying。
Hexagonal boron nitride powder, sodium nitrate and concentrated sulphuric acid mass ratio are 1:0.5～1:30～60。
The mass ratio of hexagonal boron nitride powder and potassium permanganate is 1:0.5～1。
The mass ratio of potassium permanganate and hydrogen peroxide is 1:8～16。
The invention has the beneficial effects as follows, pucherite of the present invention modifies boron nitride nanosheet composite, the nitrogen room that boron nitride nanosheet surface exists is utilized to cause that it has certain electronegativity, the photohole that illumination excites rear pucherite valence band attracts the migration to promote hole, and then improves the transport efficiency of photo-generated carrier；Additionally, the big specific surface area of boron nitride nanosheet is conducive to increasing the absorption property of compound system, these are all advantageous for for the raising of photocatalysis efficiency。
The preparation method that pucherite of the present invention modifies boron nitride nanosheet composite, process is simple, and reaction condition is gentle, and combined coefficient is high, and cost is low。
Detailed description of the invention
Below in conjunction with detailed description of the invention, the present invention is described in detail。
One pucherite of the present invention modifies boron nitride nanosheet composite, with boron nitride nanosheet for catalyst carrier, is carried on boron nitride nanosheet by pucherite, and wherein the mol ratio of boron nitride nanosheet and pucherite is 1:0.01～0.6。
Boron nitride have with graphite-phase like structure, but with graphite-phase ratio, boron nitride also has a lot of excellent physicochemical characteristicss, such as heat conduction high temperature resistant, high, excellent electric property, good high-temperature stability and chemical stability etc.。Owing to there is nitrogen room, layered nitride boron nanometer sheet surface can cause that it has certain electronegativity, if using boron nitride nanosheet as carrier of photocatalyst, semiconductor light-catalyst is carried on boron nitride nanosheet, after system is excited by illumination, the electronegativity on boron nitride nanosheet surface can attract the photohole of quasiconductor valence band to promote the migration in hole, and then improves the transport efficiency of photo-generated carrier。Additionally, the big specific surface of boron nitride nanosheet is conducive to increasing the absorption property of compound system, these are all advantageous for for photocatalysis efficiency。
The preparation method that above-mentioned pucherite modifies boron nitride nanosheet composite, specifically implements according to following steps:
Step 1, by hexagonal boron nitride powder, sodium nitrate and concentrated sulphuric acid are placed in ice-water bath are uniformly mixing to obtain suspension for 1:0.5～1:30～60 mixing in mass ratio, potassium permanganate is slowly added in suspension, wherein the mass ratio of hexagonal boron nitride powder and potassium permanganate is 1:0.5～1, the continuously stirred reaction 0.5～1h of hydrogen peroxide is added after continuously stirred reaction 8～24h, wherein the mass ratio of potassium permanganate and hydrogen peroxide is 1:8～16, question response terminate after by suspension centrifugal 10min when 3000rpm, by upper strata suspension micropore sucking filtration, deionized water wash is to neutral, obtain boron nitride nanosheet after drying；
Step 2, five water bismuth nitrate are dissolved in the salpeter solution that concentration is 10%, the mass ratio of five water bismuth nitrate and nitric acid is 1:40～100, it is subsequently adding boron nitride nanosheet and sodium metavanadate obtains mixed solution, boron nitride nanosheet, five water bismuth nitrate mol ratio be 1:0.01～0.6, the mol ratio of five water bismuth nitrate and sodium metavanadate is 1:1, by mixed solution ultrasonic agitation uniformly in 80～100 DEG C of water bath methods；Be subsequently placed in Muffle furnace 300～600 DEG C process 0.5～5h, obtain pucherite modify boron nitride nanosheet composite。
Embodiment 1
Step 1, the mixing of 1g hexagonal boron nitride powder, 0.5g sodium nitrate and 30g concentrated sulphuric acid is placed in ice-water bath and is uniformly mixing to obtain suspension, 0.5g potassium permanganate is slowly added in suspension, 4g hydrogen peroxide continuously stirred reaction 0.5h is added after continuously stirred reaction 8h, question response terminate after by suspension centrifugal 10min when 3000rpm, by upper strata suspension micropore sucking filtration, deionized water wash, to neutral, obtains boron nitride nanosheet after 60 DEG C of dry 12h；
Step 2, is dissolved in, by 0.49g five water bismuth nitrate, the salpeter solution that 19.6g concentration is 10%, is subsequently adding 2.48g boron nitride nanosheet and 0.12g sodium metavanadate obtains mixed solution, by mixed solution ultrasonic agitation uniformly in 80 DEG C of water bath methods；Be subsequently placed in Muffle furnace 300 DEG C process 0.5h, obtain pucherite modify boron nitride nanosheet composite。
Embodiment 2
Step 1, the mixing of 1g hexagonal boron nitride powder, 1g sodium nitrate and 60g concentrated sulphuric acid is placed in ice-water bath and is uniformly mixing to obtain suspension, 1g potassium permanganate is slowly added in suspension, 16g hydrogen peroxide continuously stirred reaction 1h is added after continuously stirred reaction 24h, question response terminate after by suspension centrifugal 10min when 3000rpm, by upper strata suspension micropore sucking filtration, deionized water wash, to neutral, obtains boron nitride nanosheet after 60 DEG C of dry 12h；
Step 2, is dissolved in, by 29.1g five water bismuth nitrate, the salpeter solution that 2910g concentration is 10%, is subsequently adding 2.48g boron nitride nanosheet and 7.32g sodium metavanadate obtains mixed solution, by mixed solution ultrasonic agitation uniformly in 100 DEG C of water bath methods；Be subsequently placed in Muffle furnace 600 DEG C process 5h, obtain pucherite modify boron nitride nanosheet composite。
Embodiment 3
Step 1, the mixing of 1g hexagonal boron nitride powder, 0.5g sodium nitrate and 30g concentrated sulphuric acid is placed in ice-water bath and is uniformly mixing to obtain suspension, 0.5g potassium permanganate is slowly added in suspension, 4g hydrogen peroxide continuously stirred reaction 0.5h is added after continuously stirred reaction 8h, question response terminate after by suspension centrifugal 10min when 3000rpm, by upper strata suspension micropore sucking filtration, deionized water wash, to neutral, obtains boron nitride nanosheet after 60 DEG C of dry 12h；
Step 2, is dissolved in, by 29.1g five water bismuth nitrate, the salpeter solution that 2910g concentration is 10%, is subsequently adding 2.48g boron nitride nanosheet and 7.32g sodium metavanadate obtains mixed solution, by mixed solution ultrasonic agitation uniformly in 100 DEG C of water bath methods；Be subsequently placed in Muffle furnace 600 DEG C process 5h, obtain pucherite modify boron nitride nanosheet composite。
Embodiment 4
Step 1, the mixing of 1g hexagonal boron nitride powder, 1g sodium nitrate and 60g concentrated sulphuric acid is placed in ice-water bath and is uniformly mixing to obtain suspension, 1g potassium permanganate is slowly added in suspension, 16g hydrogen peroxide continuously stirred reaction 1h is added after continuously stirred reaction 24h, question response terminate after by suspension centrifugal 10min when 3000rpm, by upper strata suspension micropore sucking filtration, deionized water wash, to neutral, obtains boron nitride nanosheet after 60 DEG C of dry 12h；
Step 2, is dissolved in, by 0.49g five water bismuth nitrate, the salpeter solution that 19.6g concentration is 10%, is subsequently adding 2.48g boron nitride nanosheet and 0.12g sodium metavanadate obtains mixed solution, by mixed solution ultrasonic agitation uniformly in 80 DEG C of water bath methods；Be subsequently placed in Muffle furnace 300 DEG C process 0.5h, obtain pucherite modify boron nitride nanosheet composite。
Embodiment 5
Step 1, the mixing of 1g hexagonal boron nitride powder, 0.8g sodium nitrate and 40g concentrated sulphuric acid is placed in ice-water bath and is uniformly mixing to obtain suspension, 0.8g potassium permanganate is slowly added in suspension, 8g hydrogen peroxide continuously stirred reaction 0.8h is added after continuously stirred reaction 12h, question response terminate after by suspension centrifugal 10min when 3000rpm, by upper strata suspension micropore sucking filtration, deionized water wash, to neutral, obtains boron nitride nanosheet after 60 DEG C of dry 12h；
Step 2, is dissolved in, by 0.49g five water bismuth nitrate, the salpeter solution that 29.4g concentration is 10%, is subsequently adding 0.062g boron nitride nanosheet and 0.12g sodium metavanadate obtains mixed solution, by mixed solution ultrasonic agitation uniformly in 90 DEG C of water bath methods；Be subsequently placed in Muffle furnace 400 DEG C process 2h, obtain pucherite modify boron nitride nanosheet composite。
Embodiment 6
Step 1, the mixing of 1g hexagonal boron nitride powder, 0.6g sodium nitrate and 50g concentrated sulphuric acid is placed in ice-water bath and is uniformly mixing to obtain suspension, 0.9g potassium permanganate is slowly added in suspension, 10.8g hydrogen peroxide continuously stirred reaction 0.6h is added after continuously stirred reaction 20h, question response terminate after by suspension centrifugal 10min when 3000rpm, by upper strata suspension micropore sucking filtration, deionized water wash, to neutral, obtains boron nitride nanosheet after 60 DEG C of dry 12h；
Step 2, is dissolved in, by 29.1g five water bismuth nitrate, the salpeter solution that 2328g concentration is 10%, is subsequently adding 14.89g boron nitride nanosheet and 0.12g sodium metavanadate obtains mixed solution, by mixed solution ultrasonic agitation uniformly in 90 DEG C of water bath methods；Be subsequently placed in Muffle furnace 500 DEG C process 4h, obtain pucherite modify boron nitride nanosheet composite。
Claims (9)
1. a pucherite modifies boron nitride nanosheet composite, it is characterised in that with boron nitride nanosheet for catalyst carrier, being carried on boron nitride nanosheet by pucherite, wherein the mol ratio of boron nitride nanosheet and pucherite is 1:0.01～0.6。
2. the preparation method that a pucherite modifies boron nitride nanosheet composite, it is characterized in that, five water bismuth nitrate are dissolved in the salpeter solution that concentration is 10%, it is subsequently adding boron nitride nanosheet and sodium metavanadate obtains mixed solution, by mixed solution ultrasonic agitation uniformly in 80～100 DEG C of water bath methods；Be subsequently placed in Muffle furnace 300～600 DEG C process 0.5～5h, obtain pucherite modify boron nitride nanosheet composite。
3. the preparation method that pucherite according to claim 2 modifies boron nitride nanosheet composite, it is characterised in that the mass ratio of five water bismuth nitrate and nitric acid is 1:40～100。
4. pucherite according to claim 2 modify boron nitride nanosheet composite preparation method, it is characterised in that boron nitride nanosheet, five water bismuth nitrate mol ratio be 1:0.01～0.6。
5. the preparation method that pucherite according to claim 2 modifies boron nitride nanosheet composite, it is characterised in that the mol ratio of five water bismuth nitrate and sodium metavanadate is 1:1。
6. the preparation method that the pucherite according to claim 2 or 4 modifies boron nitride nanosheet composite, it is characterized in that, boron nitride nanosheet obtains by the following method: by hexagonal boron nitride powder, sodium nitrate and concentrated sulphuric acid mixing are placed in ice-water bath and are uniformly mixing to obtain suspension, potassium permanganate is slowly added in suspension, the continuously stirred reaction 0.5～1h of hydrogen peroxide is added after continuously stirred reaction 8～24h, question response terminate after by suspension centrifugal 10min when 3000rpm, by upper strata suspension micropore sucking filtration, deionized water wash is to neutral, obtain boron nitride nanosheet after drying。
7. the preparation method that pucherite according to claim 6 modifies boron nitride nanosheet composite, it is characterised in that hexagonal boron nitride powder, sodium nitrate and concentrated sulphuric acid mass ratio are 1:0.5～1:30～60。
8. the preparation method that pucherite according to claim 6 modifies boron nitride nanosheet composite, it is characterised in that the mass ratio of hexagonal boron nitride powder and potassium permanganate is 1:0.5～1。
9. the preparation method that pucherite according to claim 6 modifies boron nitride nanosheet composite, it is characterised in that the mass ratio of potassium permanganate and hydrogen peroxide is 1:8～16。
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| CN109865528A (en) * | 2019-03-13 | 2019-06-11 | 高苑 | A kind of semiconductor light-catalyst material and its processing technology |
| CN115041149A (en) * | 2022-06-20 | 2022-09-13 | 扬州工业职业技术学院 | Composite material for efficiently adsorbing ammonia |
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| CN106268905A (en) * | 2016-08-11 | 2017-01-04 | 广西南宁胜祺安科技开发有限公司 | A kind of novel high-activity bismuth vanadate photocatalyst |
| CN109174082A (en) * | 2018-11-06 | 2019-01-11 | 重庆大学 | It is a kind of to prepare BiVO4/MnO2The method of composite photocatalyst oxidant |
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