CN105688967A - Bismuth tungstate/boron nitride composite photocatalytic material and preparation method thereof - Google Patents
Bismuth tungstate/boron nitride composite photocatalytic material and preparation method thereof Download PDFInfo
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- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims abstract description 92
- 229910052582 BN Inorganic materials 0.000 title claims abstract description 81
- 229910052797 bismuth Inorganic materials 0.000 title claims abstract description 44
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 title claims abstract description 44
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 239000000463 material Substances 0.000 title claims abstract description 36
- 239000002131 composite material Substances 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 230000001699 photocatalysis Effects 0.000 title abstract description 8
- 239000002135 nanosheet Substances 0.000 claims abstract description 43
- 239000011259 mixed solution Substances 0.000 claims abstract description 21
- 238000001027 hydrothermal synthesis Methods 0.000 claims abstract description 15
- 239000000243 solution Substances 0.000 claims abstract description 11
- 238000005406 washing Methods 0.000 claims abstract description 10
- 239000003054 catalyst Substances 0.000 claims abstract description 9
- 238000001035 drying Methods 0.000 claims abstract description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 4
- 239000000725 suspension Substances 0.000 claims description 36
- 239000011941 photocatalyst Substances 0.000 claims description 33
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 28
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 24
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 22
- 238000006243 chemical reaction Methods 0.000 claims description 21
- RXPAJWPEYBDXOG-UHFFFAOYSA-N hydron;methyl 4-methoxypyridine-2-carboxylate;chloride Chemical compound Cl.COC(=O)C1=CC(OC)=CC=N1 RXPAJWPEYBDXOG-UHFFFAOYSA-N 0.000 claims description 18
- 238000002156 mixing Methods 0.000 claims description 18
- 239000012286 potassium permanganate Substances 0.000 claims description 15
- XMVONEAAOPAGAO-UHFFFAOYSA-N sodium tungstate Chemical compound [Na+].[Na+].[O-][W]([O-])(=O)=O XMVONEAAOPAGAO-UHFFFAOYSA-N 0.000 claims description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 235000010344 sodium nitrate Nutrition 0.000 claims description 11
- 239000004317 sodium nitrate Substances 0.000 claims description 11
- 235000011149 sulphuric acid Nutrition 0.000 claims description 11
- 239000001117 sulphuric acid Substances 0.000 claims description 11
- 238000013019 agitation Methods 0.000 claims description 9
- 238000005119 centrifugation Methods 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 9
- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- 238000001914 filtration Methods 0.000 claims description 9
- 239000005457 ice water Substances 0.000 claims description 9
- 230000007935 neutral effect Effects 0.000 claims description 9
- 238000013508 migration Methods 0.000 abstract description 9
- 230000005012 migration Effects 0.000 abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 5
- 238000005286 illumination Methods 0.000 abstract description 3
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 3
- FBXVOTBTGXARNA-UHFFFAOYSA-N bismuth;trinitrate;pentahydrate Chemical compound O.O.O.O.O.[Bi+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O FBXVOTBTGXARNA-UHFFFAOYSA-N 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 238000000926 separation method Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000007146 photocatalysis Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N iridium(IV) oxide Inorganic materials O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000006053 organic reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000013033 photocatalytic degradation reaction Methods 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/24—Nitrogen compounds
-
- B01J35/39—
Abstract
The invention discloses a bismuth tungstate/boron nitride composite photocatalytic material. A boron nitride nano sheet is used as a catalyst carrier; bismuth tungstate is loaded on the boron nitride nano sheet, wherein the molar ratio of the boron nitride nano sheet to the bismuth tungstate is 1: (0.01 to 0.6). The invention also discloses a preparation method of the bismuth tungstate/boron nitride composite photocatalytic material. The preparation method comprises the following steps of dissolving bismuth nitrate pentahydrate in a nitric acid solution of which the concentration is 10 percent, and then adding the boron nitride nano sheet and the bismuth tungstate into an obtained mixture to obtain a mixed solution; ultrasonically agitating the mixed solution uniformly, transferring the mixed solution into a hydrothermal reaction kettle, putting the hydrothermal reaction kettle in a drying oven to carry out a hydrothermal reaction, and then naturally cooling the hydrothermal reaction kettle to a room temperature, and centrifuging, separating, washing and drying an obtained product to obtain the bismuth tungstate/boron nitride composite photocatalytic material. The composite photocatalytic material provided by the invention is caused to have certain electronegativity by utilizing a nitrogen vacancy existing on the surface of the boron nitride nano sheet; a photogenerated hole of a valence band of the bismuth tungstate excited by illumination is attracted to promote the migration of the hole; further, the migration efficiency of a photon-generated carrier is improved.
Description
Technical field
The invention belongs to inorganic environment-friendly catalysis material technical field, be specifically related to a kind of bismuth tungstate/boron nitride composite photocatalyst material, the preparation method that the invention still further relates to this composite photocatalyst material。
Background technology
Photocatalitic Technique of Semiconductor is increasingly subject to the attention of people with its efficient feature, is used for solving problem of environmental pollution and solar energy conversion。Selection for high efficiency photocatalyst is the most important aspect of Photocatalitic Technique of Semiconductor, at present, nearly more than 200 kinds of quasiconductors can be used for light-catalyzed reaction, but, the application of most of photocatalysts of relatively low quantum efficiency and serious photoetch phenomena impair。Therefore, the separation efficiency how improving semiconductor light-catalyst photo-generate electron-hole is photocatalysis technology problem encountered to suppress its quick compound。Normal conditions, the crystal structure of catalyst, particle size, pattern, particular exposed crystal face and finishing (as, precious metal surface deposition, carbon nano tube modified, graphene modified and semiconductors coupling etc.) it is the important channel improving photo-generate electron-hole separation efficiency, but, these methods are all based on the transfer rate to improve light induced electron, but, the migration rate by improving photohole is out in the cold with the separation efficiency improving photo-generated carrier。At present, the migration rate changing photohole has two kinds of methods, first, design has band structure than the semiconductors coupling system joined, after system absorption photon energy is excited, hole can be realized and migrate to the valence band of another kind of quasiconductor from the valence band of a kind of quasiconductor, but the migration of this form can weaken the oxidability in hole。Another kind of method is (such as RuO in semiconductor light-catalyst finishing hole trapping agents2、NiO、IrO2Deng), whether this method is effective in the reaction of photolysis water hydrogen, but effectively have not been reported in the organic reaction of photocatalytic degradation, and therefore, the application of this kind of method has certain limitation。Developing a kind of novel method that effectively can promote photohole migration rate is improve another important channel of semiconductor light-catalyst photo-generated carrier separation efficiency。
Summary of the invention
It is an object of the invention to provide a kind of bismuth tungstate/boron nitride composite photocatalyst material, solving existing is all based on transfer rate to improve light induced electron, but by improving the migration rate of photohole to improve the separation efficiency unheeded problem of photo-generated carrier。
The preparation method that it is a further object to provide a kind of bismuth tungstate/boron nitride composite photocatalyst material。
The technical solution adopted in the present invention is, a kind of bismuth tungstate/boron nitride composite photocatalyst material, with boron nitride nanosheet for catalyst carrier, is carried on boron nitride nanosheet by bismuth tungstate, and wherein the mol ratio of boron nitride nanosheet and bismuth tungstate is 1:0.01～0.6。
Another technical scheme of the present invention is, five water bismuth nitrate are dissolved in the salpeter solution that concentration is 10% by the preparation method of a kind of bismuth tungstate/boron nitride composite photocatalyst material, be subsequently adding boron nitride nanosheet and sodium tungstate obtains mixed solution；Mixed solution ultrasonic agitation is uniform, it is transferred to hydrothermal reaction kettle, after being placed in baking oven carrying out hydro-thermal reaction, naturally cools to room temperature, the product centrifugation washing that will obtain, dry, obtain bismuth tungstate/boron nitride composite photocatalyst material。
The feature of the present invention also resides in,
The mass ratio of five water bismuth nitrate and nitric acid is 1:40～100。
Boron nitride nanosheet, five water bismuth nitrate mol ratio be 1:0.01～0.6。
The mol ratio of five water bismuth nitrate and sodium tungstate is 2:1。
Hydrothermal temperature is 120～220 DEG C, and the time is 5～30h。
Boron nitride nanosheet obtains by the following method: the mixing of hexagonal boron nitride powder, sodium nitrate and concentrated sulphuric acid is placed in ice-water bath and is uniformly mixing to obtain suspension, potassium permanganate is slowly added into suspension, continuously stirred reaction 8～24h, it is subsequently adding hydrogen peroxide continuously stirred reaction 0.5～1h, question response terminate after by suspension centrifugal 10min when 3000rpm, by upper strata suspension micropore sucking filtration, deionized water wash, to neutral, obtains boron nitride nanosheet after drying。
Hexagonal boron nitride powder, sodium nitrate and concentrated sulphuric acid mass ratio are 1:0.5～1:30～60。
The mass ratio of hexagonal boron nitride and potassium permanganate is 1:0.5～1。
The mass ratio of potassium permanganate and hydrogen peroxide is 1:8～16。
The invention has the beneficial effects as follows, bismuth tungstate of the present invention/boron nitride composite photocatalyst material, the nitrogen room that boron nitride nanosheet surface exists is utilized to cause that it has certain electronegativity, the photohole that illumination excites rear bismuth tungstate valence band attracts the migration to promote hole, and then improves the transport efficiency of photo-generated carrier；Additionally, the big specific surface area of boron nitride nanosheet is conducive to increasing the absorption property of compound system, these are all advantageous for for the raising of photocatalysis efficiency。
The preparation method of bismuth tungstate of the present invention/boron nitride composite photocatalyst material, process is simple, and reaction condition is gentle, and combined coefficient is high, and cost is low。
Detailed description of the invention
Below in conjunction with detailed description of the invention, the present invention is described in detail。
One bismuth tungstate/boron nitride composite photocatalyst material of the present invention, with boron nitride nanosheet for catalyst carrier, is carried on boron nitride nanosheet by bismuth tungstate, and wherein the mol ratio of boron nitride nanosheet and bismuth tungstate is 1:0.01～0.6。
Boron nitride have with graphite-phase like structure, but with graphite-phase ratio, boron nitride also has a lot of excellent physicochemical characteristicss, such as heat conduction high temperature resistant, high, excellent electric property, good high-temperature stability and chemical stability etc.。Owing to there is nitrogen room, layered nitride boron nanometer sheet surface can cause that it has certain electronegativity, if using boron nitride nanosheet as carrier of photocatalyst, semiconductor light-catalyst is carried on boron nitride nanosheet, after system is excited by illumination, the electronegativity on boron nitride nanosheet surface can attract the photohole of quasiconductor valence band to promote the migration in hole, and then improves the transport efficiency of photo-generated carrier。Additionally, the big specific surface of boron nitride nanosheet is conducive to increasing the absorption property of compound system, these are all advantageous for for photocatalysis efficiency。
The preparation method of above-mentioned bismuth tungstate/boron nitride composite photocatalyst material, specifically implements according to following steps:
Step 1, by hexagonal boron nitride powder, sodium nitrate and concentrated sulphuric acid are that 1:0.5～1:30～60 mixing is placed in ice-water bath and is uniformly mixing to obtain suspension according to mass ratio, potassium permanganate is slowly added into suspension, the mass ratio of hexagonal boron nitride and potassium permanganate is 1:0.5～1, continuously stirred reaction 8～24h, it is subsequently adding hydrogen peroxide continuously stirred reaction 0.5～1h, the mass ratio of potassium permanganate and hydrogen peroxide is 1:8～16, question response terminate after by suspension centrifugal 10min when 3000rpm, by upper strata suspension micropore sucking filtration, deionized water wash is to neutral, obtain boron nitride nanosheet after drying；
Step 2, five water bismuth nitrate are dissolved in the salpeter solution that concentration is 10%, the mass ratio of five water bismuth nitrate and nitric acid is 1:40～100, it is subsequently adding boron nitride nanosheet and sodium tungstate obtains mixed solution, boron nitride nanosheet, the mol ratio of five water bismuth nitrate is 1:0.01～0.6, the mol ratio of five water bismuth nitrate and sodium tungstate is 2:1, by uniform for mixed solution ultrasonic agitation, it is transferred to hydrothermal reaction kettle, room temperature is naturally cooled to after being placed in baking oven heating processing 5～30h to 120～220 DEG C, the product centrifugation washing that will obtain, dry, obtain bismuth tungstate/boron nitride composite photocatalyst material。
Embodiment 1
Step 1, the mixing of 1g hexagonal boron nitride powder, 0.5g sodium nitrate and 30g concentrated sulphuric acid is placed in ice-water bath and is uniformly mixing to obtain suspension, 0.5g potassium permanganate is slowly added into suspension,, continuously stirred reaction 8h, it is subsequently adding 4g hydrogen peroxide continuously stirred reaction 0.5h, question response terminate after by suspension centrifugal 10min when 3000rpm, by upper strata suspension micropore sucking filtration, deionized water wash, to neutral, obtains boron nitride nanosheet after 60 DEG C of dry 12h；
Step 2,0.49g five water bismuth nitrate is dissolved in the salpeter solution that 19.6g concentration is 10%, it is subsequently adding 2.48g boron nitride nanosheet and 0.16g sodium tungstate obtains mixed solution, by uniform for mixed solution ultrasonic agitation, it is transferred to hydrothermal reaction kettle, naturally cools to room temperature after being placed in baking oven heating processing 5h to 120 DEG C, the product centrifugation washing that will obtain, in 80 DEG C of dry 12h, obtain bismuth tungstate/boron nitride composite photocatalyst material。
Embodiment 2
Step 1, the mixing of 1g hexagonal boron nitride powder, 1g sodium nitrate and 60g concentrated sulphuric acid is placed in ice-water bath and is uniformly mixing to obtain suspension, 1g potassium permanganate is slowly added into suspension,, continuously stirred reaction 24h, it is subsequently adding 16g hydrogen peroxide continuously stirred reaction 1h, question response terminate after by suspension centrifugal 10min when 3000rpm, by upper strata suspension micropore sucking filtration, deionized water wash, to neutral, obtains boron nitride nanosheet after 60 DEG C of dry 12h；
Step 2,29.1g five water bismuth nitrate is dissolved in the salpeter solution that 2910g concentration is 10%, it is subsequently adding 2.48g boron nitride nanosheet and 9.90g sodium tungstate obtains mixed solution, by uniform for mixed solution ultrasonic agitation, it is transferred to hydrothermal reaction kettle, naturally cools to room temperature after being placed in baking oven heating processing 30h to 220 DEG C, the product centrifugation washing that will obtain, in 80 DEG C of dry 12h, obtain bismuth tungstate/boron nitride composite photocatalyst material。
Embodiment 3
Step 1, the mixing of 1g hexagonal boron nitride powder, 0.5g sodium nitrate and 30g concentrated sulphuric acid is placed in ice-water bath and is uniformly mixing to obtain suspension, 0.5g potassium permanganate is slowly added into suspension,, continuously stirred reaction 8h, it is subsequently adding 4g hydrogen peroxide continuously stirred reaction 0.5h, question response terminate after by suspension centrifugal 10min when 3000rpm, by upper strata suspension micropore sucking filtration, deionized water wash, to neutral, obtains boron nitride nanosheet after 60 DEG C of dry 12h；
Step 2,29.1g five water bismuth nitrate is dissolved in the salpeter solution that 2910g concentration is 10%, it is subsequently adding 2.48g boron nitride nanosheet and 9.90g sodium tungstate obtains mixed solution, by uniform for mixed solution ultrasonic agitation, it is transferred to hydrothermal reaction kettle, naturally cools to room temperature after being placed in baking oven heating processing 30h to 220 DEG C, the product centrifugation washing that will obtain, in 80 DEG C of dry 12h, obtain bismuth tungstate/boron nitride composite photocatalyst material。
Embodiment 4
Step 1, the mixing of 1g hexagonal boron nitride powder, 1g sodium nitrate and 60g concentrated sulphuric acid is placed in ice-water bath and is uniformly mixing to obtain suspension, 1g potassium permanganate is slowly added into suspension,, continuously stirred reaction 24h, it is subsequently adding 16g hydrogen peroxide continuously stirred reaction 1h, question response terminate after by suspension centrifugal 10min when 3000rpm, by upper strata suspension micropore sucking filtration, deionized water wash, to neutral, obtains boron nitride nanosheet after 60 DEG C of dry 12h；
Step 2,0.49g five water bismuth nitrate is dissolved in the salpeter solution that 19.6g concentration is 10%, it is subsequently adding 2.48g boron nitride nanosheet and 0.16g sodium tungstate obtains mixed solution, by uniform for mixed solution ultrasonic agitation, it is transferred to hydrothermal reaction kettle, naturally cools to room temperature after being placed in baking oven heating processing 5h to 120 DEG C, the product centrifugation washing that will obtain, in 80 DEG C of dry 12h, obtain bismuth tungstate/boron nitride composite photocatalyst material。
Embodiment 5
Step 1, the mixing of 1g hexagonal boron nitride powder, 0.8g sodium nitrate and 40g concentrated sulphuric acid is placed in ice-water bath and is uniformly mixing to obtain suspension, 0.8g potassium permanganate is slowly added into suspension, continuously stirred reaction 12h, being subsequently adding 8g hydrogen peroxide continuously stirred reaction 0.8h, suspension is centrifuged 10min after terminating by question response when 3000rpm, by upper strata suspension micropore sucking filtration, deionized water wash, to neutral, obtains boron nitride nanosheet after 60 DEG C of dry 12h；
Step 2,0.49g five water bismuth nitrate is dissolved in the salpeter solution that 29.4g concentration is 10%, it is subsequently adding 0.062g boron nitride nanosheet and 0.16g sodium tungstate obtains mixed solution, by uniform for mixed solution ultrasonic agitation, it is transferred to hydrothermal reaction kettle, naturally cools to room temperature after being placed in baking oven heating processing 10h to 180 DEG C, the product centrifugation washing that will obtain, in 80 DEG C of dry 12h, obtain bismuth tungstate/boron nitride composite photocatalyst material。
Embodiment 6
Step 1, the mixing of 1g hexagonal boron nitride powder, 0.6g sodium nitrate and 50g concentrated sulphuric acid is placed in ice-water bath and is uniformly mixing to obtain suspension, 0.9g potassium permanganate is slowly added into suspension, continuously stirred reaction 20h, being subsequently adding 10.8g hydrogen peroxide continuously stirred reaction 0.6h, suspension is centrifuged 10min after terminating by question response when 3000rpm, by upper strata suspension micropore sucking filtration, deionized water wash, to neutral, obtains boron nitride nanosheet after 60 DEG C of dry 12h；
Step 2,29.1g five water bismuth nitrate is dissolved in the salpeter solution that 2328g concentration is 10%, it is subsequently adding 14.89g boron nitride nanosheet and 9.90g sodium tungstate obtains mixed solution, by uniform for mixed solution ultrasonic agitation, it is transferred to hydrothermal reaction kettle, naturally cools to room temperature after being placed in baking oven heating processing 20h to 200 DEG C, the product centrifugation washing that will obtain, in 80 DEG C of dry 12h, obtain bismuth tungstate/boron nitride composite photocatalyst material。
Claims (10)
1. bismuth tungstate/boron nitride composite photocatalyst material, it is characterised in that with boron nitride nanosheet for catalyst carrier, be carried on boron nitride nanosheet by bismuth tungstate, wherein the mol ratio of boron nitride nanosheet and bismuth tungstate is 1:0.01～0.6。
2. the preparation method of bismuth tungstate/boron nitride composite photocatalyst material, it is characterised in that five water bismuth nitrate are dissolved in the salpeter solution that concentration is 10%, is subsequently adding boron nitride nanosheet and sodium tungstate obtains mixed solution；Mixed solution ultrasonic agitation is uniform, it is transferred to hydrothermal reaction kettle, after being placed in baking oven carrying out hydro-thermal reaction, naturally cools to room temperature, the product centrifugation washing that will obtain, dry, obtain bismuth tungstate/boron nitride composite photocatalyst material。
3. the preparation method of bismuth tungstate according to claim 2/boron nitride composite photocatalyst material, it is characterised in that the mass ratio of five water bismuth nitrate and nitric acid is 1:40～100。
4. the preparation method of bismuth tungstate according to claim 2/boron nitride composite photocatalyst material, it is characterised in that boron nitride nanosheet, five water bismuth nitrate mol ratio be 1:0.01～0.6。
5. the preparation method of bismuth tungstate according to claim 2/boron nitride composite photocatalyst material, it is characterised in that the mol ratio of five water bismuth nitrate and sodium tungstate is 2:1。
6. the preparation method of bismuth tungstate according to claim 2/boron nitride composite photocatalyst material, it is characterised in that hydrothermal temperature is 120～220 DEG C, the time is 5～30h。
7. the preparation method of the bismuth tungstate according to claim 2 or 4/boron nitride composite photocatalyst material, it is characterized in that, boron nitride nanosheet obtains by the following method: by hexagonal boron nitride powder, sodium nitrate and concentrated sulphuric acid mixing are placed in ice-water bath and are uniformly mixing to obtain suspension, potassium permanganate is slowly added into suspension, continuously stirred reaction 8～24h, it is subsequently adding hydrogen peroxide continuously stirred reaction 0.5～1h, question response terminate after by suspension centrifugal 10min when 3000rpm, by upper strata suspension micropore sucking filtration, deionized water wash is to neutral, obtain boron nitride nanosheet after drying。
8. the preparation method of bismuth tungstate according to claim 7/boron nitride composite photocatalyst material, it is characterised in that hexagonal boron nitride powder, sodium nitrate and concentrated sulphuric acid mass ratio are 1:0.5～1:30～60。
9. the preparation method of bismuth tungstate according to claim 7/boron nitride composite photocatalyst material, it is characterised in that the mass ratio of hexagonal boron nitride and potassium permanganate is 1:0.5～1。
10. the preparation method of bismuth tungstate according to claim 7/boron nitride composite photocatalyst material, it is characterised in that the mass ratio of potassium permanganate and hydrogen peroxide is 1:8～16。
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| CN107029773A (en) * | 2017-03-14 | 2017-08-11 | 沃邦环保有限公司 | Boron nitride bismuth tungstate composite photocatalyst of degradating organic dye and preparation method thereof |
| CN108399959A (en) * | 2018-03-08 | 2018-08-14 | 南通大学 | A kind of X, gamma-rays safeguard function raw powder's production technology |
| CN111644203A (en) * | 2020-06-10 | 2020-09-11 | 青岛品泰新材料技术有限责任公司 | Application of metalloporphyrin functionalized graphene quantum dot/boron nitride composite photocatalytic material in hydrogen production by photolysis of water |
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Cited By (6)
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| CN106865685A (en) * | 2017-03-14 | 2017-06-20 | 沃邦环保有限公司 | A kind of processing method of photocatalytic degradation rhdamine B waste water |
| CN107029773A (en) * | 2017-03-14 | 2017-08-11 | 沃邦环保有限公司 | Boron nitride bismuth tungstate composite photocatalyst of degradating organic dye and preparation method thereof |
| CN107029773B (en) * | 2017-03-14 | 2019-11-19 | 沃邦环保有限公司 | Boron nitride-bismuth tungstate composite photocatalyst of degradating organic dye and preparation method thereof |
| CN106865685B (en) * | 2017-03-14 | 2020-10-16 | 苏州睿澎诚科技有限公司 | Treatment method for photocatalytic degradation of rhodamine B dye wastewater |
| CN108399959A (en) * | 2018-03-08 | 2018-08-14 | 南通大学 | A kind of X, gamma-rays safeguard function raw powder's production technology |
| CN111644203A (en) * | 2020-06-10 | 2020-09-11 | 青岛品泰新材料技术有限责任公司 | Application of metalloporphyrin functionalized graphene quantum dot/boron nitride composite photocatalytic material in hydrogen production by photolysis of water |
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