CN105679886A - 一种发光二极管的制造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 50
- 238000005520 cutting process Methods 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 239000010931 gold Substances 0.000 claims abstract description 17
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052737 gold Inorganic materials 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 15
- 229910052594 sapphire Inorganic materials 0.000 claims description 15
- 239000010980 sapphire Substances 0.000 claims description 15
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 11
- 239000010408 film Substances 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- 238000001465 metallisation Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 5
- 229910004205 SiNX Inorganic materials 0.000 claims description 4
- 229910020286 SiOxNy Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 4
- 238000003698 laser cutting Methods 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000002002 slurry Substances 0.000 claims description 4
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical group [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000007738 vacuum evaporation Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 229910000906 Bronze Inorganic materials 0.000 abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 abstract description 11
- 239000010974 bronze Substances 0.000 abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 10
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 abstract description 10
- 238000003466 welding Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052709 silver Inorganic materials 0.000 abstract description 3
- 239000004332 silver Substances 0.000 abstract description 3
- 238000001579 optical reflectometry Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 8
- 241000218202 Coptis Species 0.000 description 7
- 235000002991 Coptis groenlandica Nutrition 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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Abstract
本发明公开的一种发光二极管的制造方法,采用金属化连线的方法制造发光二极管,本发明的优点在于,本发明是先在晶圆上定义出模块的尺寸,模块内的LED芯片己先用半导体制程的金属化连接技术连接,同时也定义出焊垫开口位置,故在切割晶圆时是依模块与模块线开之间的切割道进行切割,所以切割的次数较少,可以降低生产成本;另外,采用金属层包覆住LED芯片的部份侧壁,由于这些金属薄膜(铝铜薄膜,金薄膜,或银薄膜)都具有极佳的光反射性,故可将LED照射到芯片侧壁的光子反射到LED的表面而增加发光效率。
Description
技术领域
本发明属于照明设备的技术领域,具体的是一种发光二极管的制造方法。
背景技术
发光二极管,简称LED,是一种能将电能转化为光能的半导体电子元件,通常以蓝宝石衬底制造发光二极管(LED),传统的LED芯片结构如图1所示,1-8依次是金属底座、黏着材料、n型GaN、GaN量子阱、n型电极、p型GaN、透明电极层TCL、p型电极;以MOCVD外延成长的细部结构以蓝宝石基板为蓝光LED的衬底片,先长一层适当厚度的GaN缓冲层,再长一层3um厚度掺离Si的n型GaN接触层,生长InGaN/GaN多重量子井结构(至少5-7层),生长一层很薄的掺杂Mg的p型AlGaN障壁层(50nm),生长一层很薄的掺杂Mg的p型GaN接触层(50nm),如图2所示。
对于上述LED芯片传统制造的前段流程方法为:
(1)以ICP干式刻蚀法或激光切割法在晶圆上制作切割道,在蓝宝石晶园基板上隔离各个LED芯片,如图3所示;
(2)在表面用PECVD法生长300nm厚的SiO2薄膜作为刻蚀GaN的屏蔽层,如图4所示;
(3)以ICP高密度电浆刻蚀机刻蚀GaN而得到图5的Mesa结构;
(4)在p型GaN上成长透明电极Ni/Au,如图6所示;
(5)以lift-off工艺同时在Ni/Au透明电极和n型GaN上形成奥姆接触以及焊垫,如图7和图8所示,13为焊垫,也可作为奥姆接触位置,14为p区焊垫,15为n区焊垫;
(6)接着以PECVD方式在LED芯片表面生长一层的200-300nm厚的SiOx,或SiNx,或SiOxNy钝化层来隔绝金属电极与外界氧气和水气的接触.(如图9,标示9所指);
(7)接着用微影及刻蚀技术在焊垫区域开启接触窗口(contactwindow),如图10所示,16为开启的接触窗口;
后段流程方法为:
(1)将蓝宝石基板研磨减薄至80-100um以利切割崩裂成单颗结构的LED芯片;
(2)用激光将LED晶园切割分离而得到多个单颗结构的LED芯片。(如图11所示);
在将上述得到的单颗LED芯片连接起来时,传统的焊线步骤如下:
(1)以金线(或铝铜线)分别焊接在芯片的p端焊垫及n端焊垫.再连接适当电源即可点亮各个LED器件,由于LED器件只能透过极细的金属焊线以及蓝宝石基板散热,故散热效果十分有限;
(2)如图12所示的为多颗LED芯片串联的示意图,10表示为基板、11为金属连线,通常用焊线键合(wirebonding)方式以细金线(或细铝铜线)将第一个LED的N型电极连接到相邻第二个LED芯片的P型电极上,接着再用细金线(或细铝铜线)将第二个LED芯片的N型电极连接到相邻第三个LED芯片的P型电极上,依次再用同法连接第四个LED芯片,第五个LED芯片等等以形成LED的串联数组.在一定的额定电流驱动下,串联数组的LED数目由串联数组两瑞的额定电压来决定;
在并联数组中,通常用焊线键合(Wirebonding)方式以细金线或细铝铜线将第一个LED的P型电极连接到相邻第二个LED芯片的P型电极上,再以焊线键合(wirebonding)方式用细金线或细铝铜线将第一个LED的N型电极连接到相邻第二个LED芯片的N型电极上即可形成最简单的并联数组.同法用细金线或细铝铜线连接复数个同列LED的P型电极,再用细金线或细铝铜线连接该复数个同列LED的N型电极即可形成复数个LED的并联数组.在一定的额定电压驱动下,并联数组的LED数目由并联数组两瑞的额定电流来决定。
上述传统方法,由于耐高电压高功率发光二极管(LED)模块内的发光二极管芯片仅能透过极细的金属焊线以及蓝宝石基座散热,故散热效果较差,热积存产生的热应力极易使金属焊线断开而导致耐高电压高功率发光二极管(LED)模块丧失可靠度,并降低LED模块生命期;传统制造LED模块的方法是将分离式的LED芯片依设计规格用细金属线焊接连成模块.前述的研磨减薄成本,激光分离LED芯片的切割成本,以及封装后的不良散热能力,热应力引起的断线,冗长过多的打线焊接成本,以及LED模块的可靠性都是LED产业的重大瓶颈。
发明内容
有鉴于此,本发明逐提出一种新的制作发光二极管的方法,取代现有的板上芯片直装技术(COB)来制作耐高电压高功率发光二极管(LED)模块,本发明无需使用焊线键合(Wirebonding)方式连接模块内各个单一发光二极管(LED)芯片,同时依照所设计的额定功率及额定电压,在晶园上预先制定出相对的模块面积则可减少切割的次数,进而可依照模块的面积来制定蓝宝石晶园研磨减薄的厚度,这种与传统制作单一发光二极管(LED)芯片兼容的半导体制程技术可以降低生产成本,无需使用焊线键合(Wirebonding)方式连接各个单一发光二极管(LED)芯片则可改善前述的各种缺失,有效提升耐高电压高功率发光二极管(LED)模块的良品率。
为实现上述目的,本发明采用的技术方案为,(1)以ICP干式刻蚀法或激光切割法在晶圆上制作切割道,在蓝宝石晶园基板上隔离各个LED芯片;
(2)在表面用PECVD法生长300nm厚的SiO2薄膜作为刻蚀GaN的屏蔽层;
(3)以ICP高密度电浆刻蚀机刻蚀GaN而得到Mesa结构;
(4)在p型GaN上成长透明电极Ni/Au;
(5)以lift-off工艺同时在Ni/Au透明电极和n型GaN上形成奥姆接触以及焊垫;
(6)接着以PECVD方式在LED芯片表面生长一层的200-300nm厚的SiOx,或SiNx,或SiOxNy钝化层来隔绝金属电极与外界氧气和水气的接触;
(7)接着用微影及刻蚀技术在焊垫区域开启接触窗口(contactwindow);
(8)在晶圆上以电子束枪(E-Gun)或真空蒸镀机(VacEvaporator)在晶园表面沉积一定厚度的铝铜金属薄膜层,或金(Au)薄膜层,或银(Ag)薄膜层;
(9)以微影及刻蚀工艺进行金属层图案化(patterning);
(10)在晶圆表面再以PECVD方式沉积一定厚度的钝化层,来保护LED模块表面,以避免表面刮伤以及水气和杂质侵入;
(11)依LED模块的规格来制定模块内的面积尺寸,模块内的LED芯片数量,以及模块内的LED芯片串联,并联,或串并联的方式;
(12)以微影及刻蚀工艺在LED模块两端点开启接触窗口,LED模块两端位置打开正电极焊垫区和负电极焊垫区来连接电源导线,即可点亮LED模块。
本发明的LED芯片结构的后段流程说明:
(1)将蓝宝石基板研磨减薄至约150um以承载模块的LED芯片(绝对比传统的80-100um要厚,故可节省研磨时间及耗材成本),以利进行下一阶段的切割崩裂成单片的LED芯片模块结构;
(2)用激光将减薄的LED晶园切割崩裂成单片的LED芯片模块结构,模块尺寸决定激光切割的次数,故可以有效控制切割的成本并提升LED芯片模块的良品率。
综上,本发明的有益效果是,在传统的LED芯片制程中,在切割晶圆时是依LED芯片与LED芯片之间的切割道进行切割,切割的次数与LED芯片面积成反比关系,LED芯片面积越小则需更多的切割次数,切割成本也更高,本发明是先在晶圆上定义出模块的尺寸,模块内的LED芯片己先用半导体制程的金属化连线技术连接,同时也定义出焊垫开口位置,故在切割晶圆时是依模块与模块开之间的切割道进行切割,所以切割的次数较少,可以降低生产成本;另外,金属化连线技术的导线宽度比一般金属焊线的直径(1mil左右,约为25um)要大数倍,导线宽度一般可调整在5mils以上,甚至可以依LED芯片的功率而调整为更宽些.较宽的金属化连线可以降低整个导线的电阻值及导线功耗,较大的导线宽度也可增加LED模块的散热能力,这些金属层同时包覆住LED芯片的部份侧壁,由于这些金属薄膜(铝铜薄膜,金薄膜,或银薄膜)都具有极佳的光反射性,故可将LED照射到芯片侧壁的光子反射到LED的表面而增加发光效率。
附图说明
图1为背景技术中传统LED芯片结构示意图;
图2为背景技术中制作LED芯片顺序结构示意图;
图3为传统方法前段制程步骤(1)得到的结构示意图;
图4为传统方法前段制程步骤(2)得到的结构示意图;
图5为传统方法前段制程步骤(3)得到的结构示意图;
图6为传统方法前段制程步骤(4)得到的结构示意图;
图7为传统方法前段制程步骤(5)的结构示意图;
图8为传统方法前端制程步骤(5)焊垫的结构示意图;
图9为钝化层结构示意图;
图10为开启接触窗口的结构示意图;
图11为传统方法得到的单颗LED结构示意图;
图12为传统LED芯片串联结构示意图;
图13为沉积有金属层的结构示意图;
图14为本发明步骤(9)中微影或刻蚀工艺后得到的结构示意图;
图15为本发明步骤(9)中对应的主视图;
图16为本发明步骤(10)得到的结构示意图;
图17为本发明步骤(12)得到的结构示意图;
图18为本发明切割道的结构示意图;
图19为本发明切割晶元的示意图。
图中,1、金属底座;2、黏着材料;3、n型GaN;4、GaN量子阱;5、n型电极;6、p型GaN;7、透明电极层TCL;8、p型电极;9、SiO2钝化层;10、基板;11、金属连线;12、正电极焊垫区;13、焊垫;14、p区焊垫;15、n区焊垫;16、接触窗口;17、负极焊垫区;18、蓝宝石基板。
具体实施方式
下面结合具体实施例对本发明做出进一步的描述。
实施例:本发明公开的一种制作发光二极管的方法,包括如下步骤,步骤(1)-(7)与现有技术相同,(1)以ICP干式刻蚀法或激光切割法在晶圆上制作切割道,在蓝宝石晶园基板上隔离各个LED芯片,如图3所示;
(2)在表面用PECVD法生长300nm厚的SiO2薄膜作为刻蚀GaN的屏蔽层,如图4所示;
(3)以ICP高密度电浆刻蚀机刻蚀GaN而得到图5所示的Mesa结构;
(4)在p型GaN上成长透明电极Ni/Au(如图6所示);
(5)以lift-off工艺同时在Ni/Au透明电极和n型GaN上形成奥姆接触以及焊垫,欧姆接触及焊垫侧面结构参照图7所示,焊垫区正视图如图8所示,13表示焊垫位置,也可作为欧姆接触位置,14表示p区焊垫,15表示n区焊垫;
(6)接着以PECVD方式在LED芯片表面生长一层的200-300nm厚的SiOx,或SiNx,或SiOxNy钝化层来隔绝金属电极与外界氧气和水气的接触;(如图9所示,(标示9))
(7)接着用微影及刻蚀技术在焊垫区域开启接触窗口(contactwindow),如图10所示,16为开启的接触窗口;
(8)在图10所示的晶圆上以电子束枪(E-Gun)或真空蒸镀机(VacEvaporator)在晶园表面沉积一定厚度的铝铜金属薄膜层,或金(Au)薄膜层,或银(Ag)薄膜层,其剖面图如图13所示,11为金属连线(金属薄膜层);
(9)以微影及刻蚀工艺进行金属层图案化(patterning),如图14标示的为已图案化的金属连线11,此金属连线即连接相邻的LED芯片(本图为串联方或)构成不同形状的LED模块;本侧视图相对应的平面图如图15所示,金属连线的宽度视p区焊垫和n区焊垫的尺寸来决定,故在降低电阻及散热及散热能力上答道优于传统的金焊线或铝铜焊线。
(10)在晶圆表面再以PECVD方式沉积一定厚度的钝化层,来保护LED模块表面,以避免表面刮伤以及水气和杂质侵入,如图16所示,9所示的二氧化硅层;
(11)依LED模块的规格来制定模块内的面积尺寸,模块内的LED芯片数量,以及模块内的LED芯片串联,并联,或串并联的方式;
(12)以微影及刻蚀工艺在LED模块两端点开启接触窗口,如图17所示19表示为蓝宝石基板,在LED模块两端位置打开正电极焊垫区12和负电极焊垫区17来连接电源导线,即可点亮模块。
本发明方法后制程包括的如下步骤:
(1)将蓝宝石基板研磨减薄至适当厚度以承载模块的LED芯片(绝对比传统的80-100um要厚,故可节省研磨时间及耗材成本),以利进行下一阶段的切割崩裂成单片的LED芯片模块结构;
(2)用激光将减薄的LED晶园模块尺寸切割并崩裂成单片的LED模块结构,模块尺寸决定激光切割的次数,故可以用效控制切割的成本并提升LED芯片模块的良品率。
采用本发明方法的有益效果,以图18所示为例:在传统的LED芯片制程中,在切割晶圆元是依LED芯片与LED芯片之间的切割道进行切割,切割的次数与LED芯片面积成反比关系,LED芯片面积越小则需更多的切割次数,切割成本也更高。
另外,本发明是先在晶圆上依功率、电压、电流的规格先定义出LED模块的尺寸,如图19所示;模块内的LED芯片己先用半导体制程的金属化连线技术连接,同时也定义出焊垫开口位置,故在切割晶圆时是依模块与模块之间的切割道进行切割,所以切割的次数较少,可以降低生产成本并提升LED模块的良品率。
以图14-图17所示的结构说明;金属化连线技术的导线宽度比一般金属焊线的直径(1mil左右,约为25um)要大数倍,金属化连线导线宽度一般可调整在5mils以上,甚至可以依LED芯片的功率而调整为更宽些。较宽的金属化连线可以降低整个导线的电阻值及导线功耗,较大的导线宽度也可增加LED模块的散热能力,图14-17可知,这些金属层也同时包覆住LED芯片的部份侧壁,由于这些金属薄膜(铝铜薄膜,金薄膜,或银薄膜)都具有极佳的光反射性,故可将LED照射到芯片侧壁的光子反射到LED的表面而增加发光效率。
图17所示,该耐高电压高功率发光二极管(LED)模块上有两个可对外接电线的电极,将电线焊接在发光二极管(LED)模块的电极上,再用电线连接至一个直流电源或交流电源上,即可达到使耐高压高功率发光二极管(LED)模块发光的目的。
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明实质内容上所作的任何修改、等同替换和简单改进等,均应包含在本发明的保护范围之内。
Claims (3)
1.一种发光二极管的制造方法,其特征在于,采用金属化连线的方法制造发光二极管。
2.根据权利要求1所述的发光二极管的制造方法,其特征在于,该方法的前段制程包括如下步骤:a、以ICP干式刻蚀法或激光切割法在晶圆上制作切割道,在蓝宝石晶园基板上隔离各个LED芯片;
b、在表面用PECVD法生长300nm厚的SiO2薄膜作为刻蚀GaN的屏蔽层;
c、以ICP高密度电浆刻蚀机刻蚀GaN而得到Mesa结构;
d、在p型GaN上覆着透明电极Ni/Au;
e、以lift-off工艺同时在Ni/Au透明电极和n型GaN上形成奥姆接触以及焊垫;
f、以PECVD方式在LED芯片表面生长一层的200-300nm厚的SiOx,或SiNx,或SiOxNy钝化层来隔绝金属电极与外界氧气和水气的接触;
g、采用微影及刻蚀技术在焊垫区域开启接触窗口;
h、在晶圆上以电子束枪或真空蒸镀机在晶园表面沉积铝铜金属薄膜层,或金薄膜层,或银薄膜层;
i、以微影及刻蚀工艺进行金属层图案化;
j、在晶圆表面再以PECVD方式沉积钝化层;
k、依LED模块的规格来制定模块内的面积尺寸、模块内的LED芯片数量、以及模块内的LED芯片串联,并联,或串并联的方式;
l、以微影及刻蚀工艺在LED模块两端点开启接触窗口,在LED模块两端位置打开正电极焊垫区和负电极焊垫区来连接电源导线,即可点亮LED模块。
3.根据权利要求2所述的发光二极管的制造方法,其特征在于,该方法的后段制程包括如下步骤:(1)将蓝宝石基板研磨减薄至适当厚度以承载模块的LED芯片;(2)用激光将减薄的LED晶园依模块尺寸切割并崩裂成单片的LED芯片模块结构。
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