CN105679655A - Preparation method of III-V semiconductor nanowire - Google Patents
Preparation method of III-V semiconductor nanowire Download PDFInfo
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Abstract
The invention provides a preparation method of an III-V semiconductor nanowire. The preparation method comprises the following steps: (1) purifying a Si/SiO<2> substrate, dropping a gold particle water solution on a surface of the purified Si/SiO<2> substrate, and completely volatilizing moisture; (2) separately placing the Si/SiO<2> substrate treated in the step (1) and III-V semiconductor powder in a same hard glass tube to perform heating and exhausting, cooling the hard glass tube and sealing the cooled hard glass tube; and (3) heating the hard glass tube treated in the step (2) at a high temperature through a heating device, and performing cooling to obtain the III-V semiconductor nanowire. Through adoption of the preparation method, a preparation process of the nanowire is simplified; universality is realized; the preparation cost is lowered; the prepared nanowire can be directly stored in a vacuum environment to be prevented from being oxidized due to air contact; and the reliability of nanowire preparation is enhanced greatly.
Description
Technical field
The present invention relates to technical field of semiconductor material preparation, the preparation method being specially a kind of III-V race's semiconductor nanowires.
Background technology
1, III-V race's semiconductor nanowires
III-V race's semi-conducting material mainly includes InSb, InAs, GaSb, GaAs etc. III-V race's semi-conducting material belongs to direct band gap material, and energy gap is narrow, and when 300K, InSb is 0.17eV, InAs be 0.35eV, GaSb be 0.7eV, GaAs is 1.4eV, and the development for far infrared and near infrared detector provides possibility. III-V race's semi-conducting material has very big electronics and hole mobility and smaller effective electron mass, is the excellent material of a class manufacture high-speed semiconductor device and quantum device. Due to the character that it is special, III-V race's semiconductor nanowires has now been applied to multiple applications such as field effect transistor, photodetector, solaode, light emitting diode, gas detector, and have a very wide range of applications prospect.
2, VLS growth mechanism (Vapor-Liquid-SolidMechanism, VLS)
VLS growth mechanism is a kind of method for growth of one-dimensional nano material, is above reported at " Applied Physics bulletin " (AppliedPhysicsLetters, APL) in 1967 by Wanger the earliest. Initial VLS mechanism grows silicon nanowires on a silicon substrate for introducing. Plate nano level gold film at clean silicon face, make gold film become nano level gold grain one by one by high annealing. Predecessor Silicon chloride. is passed under the carrier gas effect of hydrogen, in the chamber, Silicon chloride. and hydrogen generation chemical reaction, generate elemental silicon and hydrogen chloride. Owing to reaction carries out in atmosphere, the silicon matter of generation will be deposited on surface of silicon. And gold and silicon can dissolve each other, form the alloying substance of gold silicon. Gold grain on substrate absorbs enough silicon, reaches capacity, it can be seen that silicon can precipitate out from parent phase under the effect of phasor, goes out silicon nanowires in surface of silicon according to its lattice structure epitaxial growth. Because transporting of material lives through gas to liquid to solid, the transition process of three-phase, so this mechanism is known as VLS growth mechanism.
In numerous nano-material preparations, major part growth pattern from bottom to top is considered as the catalytic action of VLS mechanism, uses VLS mechanism can control the synthesis of monodimension nanometer material according to phasor.In VLS growth mechanism, the size of catalysed particulate defines the radial dimension of monodimension nanometer material, and it can only be grown towards a dimension, forms nano thread structure. On the basis of VLS mechanism, there are some researches show, when catalysed particulate is solid, the preparation of nano-material can also be carried out, gas-solid-solid growth mechanism (Vapor-Solid-SolidMechanism, VSS) by Lund, Sweden university (LundUniversity) in scanning transmission electron microscope real-time monitored to, become gas-solid-liquid growth mechanism one derive.
3, nano wire primary growth device
Chemical gaseous phase depositing process (Chemicalvapordeposition, CVD) is a kind of common method for preparing thin film, nano material. Under the driving of carrier gas, bring the predecessor of gas or solid into deposition region, under the effect of surface catalyst or activating agent, form certain thin film or nanostructured, it is achieved the preparation of material.
Nowadays chemical vapour deposition (CVD) is a kind of relatively inexpensive material growth mode, on this basis, the predecessor of chemical vapour deposition (CVD) is replaced to metallorganic, and control unit and growth chamber are improved, metal organic chemical vapor deposition (MetalorganicChemicalvapordeposition, the MOCVD) method being evolved into is widely used in the preparation of III-V race's semiconductor nanowires. Lund, Sweden university uses MOCVD to prepare InAs nano wire in the single crystalline substrate of indium arsenide, and based on InAs nano wire by the method changing V race's organometallic sources, has successfully prepared the InAs/InSb heterojunction structure of high-quality.
Molecular beam epitaxy (Molecularbeamepitaxy, MBE) is also used to prepare a kind of mode of thin-film material the earliest. In high-vacuum chamber, heat required component and produce steam, inject directly on substrate after forming molecule or atomic beam, it is achieved the growth of thin film or nano material. It is characterized in that, it is possible to grown by control realization low rate; There is the vacuum environment of superelevation, avoid to greatest extent polluting; And growth substrates can in relatively low temperature environment, it is to avoid at high temperature introduce lattice mismatch.
On the basis of MBE, by the organometallic sources in MOCVD is combined with the Dominant Facies of MBE, people have invented chemical beam epitaxy (Chemicalbeamepitaxy, CBE), metal organic source is heated by heat cracker, it is ejected on substrate, it is possible to achieve halved tie flow better controls.
Above four kinds of aspects have been applied to the growth of III-V race's semiconductor nanowires at present, but due to its apparatus expensive, difficult in maintenance, single growth cost is high, is mainly used in laboratory research always.
Summary of the invention
For overcoming above-mentioned deficiency, the preparation method that the present invention provides a kind of III-V race's semiconductor nanowires, the preparation process making nano wire simplifies more, there is versatility, reduce preparation cost, can the nano wire prepared be stored directly in vacuum environment, it is prevented that aoxidize because of ingress of air, substantially increase reliability prepared by nano wire.
For solving above-mentioned technical problem, the technical solution adopted in the present invention is:
The preparation method of a kind of III-V race's semiconductor nanowires, comprises the steps:
1)Si/SiO2Substrate, after purified treatment, drips on surface and spreads gold grain aqueous solution, then make moisture volatilize completely;
2) by step 1) Si/SiO that processed2Substrate and a kind of III-V race's semiconductor powder are separately placed in heating aerofluxus in same Bohemian glass pipe, then cool down, seal;
3) by step 2) the Bohemian glass pipe that processed by heater high-temperature heating, then cooling acquisition III-V race's semiconductor nanowires.
Further, described Si/SiO2The purifying treatment method of substrate is, by this Si/SiO2Substrate immerses ultrasonic at least 5 minutes of difference in acetone, ethanol successively, then with deionized water rinsing, dries up by nitrogen or other non-reactive gas after taking-up.
Further, described gold grain be sized to 10nm, density is 1000ppm.
Further, described step 2) in, by Si/SiO2Substrate is placed in a quartz ampoule, then is placed in by quartz ampoule in described Bohemian glass pipe; III-V race's semiconductor powder is placed directly within described Bohemian glass pipe, or is first placed in a Bohemian glass tubule, then this Bohemian glass tubule is placed in described Bohemian glass pipe.
Further, described Si/SiO2The width of substrate is equal with quartz ampoule internal diameter, and length is less than quartz ampoule length.
Further, described quartz ampoule is of a size of: external diameter 8mm, internal diameter 6mm, length 2cm;
Described Bohemian glass tubule is of a size of: external diameter 8mm, internal diameter 6mm, length 2cm;
Described Bohemian glass pipe is of a size of: external diameter 12mm, internal diameter 8.5mm, length 20cm;
Described Si/SiO2Substrate is of a size of: 6mm × 6mm.
Further, described step 2) in, the outlet of described Bohemian glass pipe connects a vacuum-pumping system by the transitional glass pipe of both ends open, carries out baking also aerofluxus at least 4 hours, be then evacuated in the baking oven not higher than 300 DEG C, and vacuum is 1 × 10-4Pa, then to Bohemian glass pipe thermoplastic to seal outlet.
Further, described vacuum-pumping system includes mechanical pump and diffusion pump.
Further, described heater is tube furnace, to this tube furnace extracting vacuum under high-temperature heating state, and pass into nitrogen or other non-reactive gas 100sccm, holding furnace intracavity vacuum is 1KPa, Temperature fall again after continuing at least 5 minutes, the temperature value of described high temperature adopts different specified temps according to III-V different race's semiconductor powders.
Further, described III-V race's semiconductor powder is InAs, GaAs and GaSb powder.
A kind of novel Bohemian glass pipe, for above-mentioned preparation method, including two arms, bottom lock, top connects and exports together with one altogether; Arm one is provided with a pertusate cone-shaped glass dividing plate of band, holds III-V race's semiconductor powder bottom this arm; Arm two is provided with a quartz ampoule and a glass funnel, and described quartz ampoule holds Si/SiO2Substrate, bottom lock also passes through bottom Glass rod and this arm affixed; The big mouth of described glass funnel is connected with the inwall of arm two, and osculum gos deep into inside quartz ampoule.
The invention has the beneficial effects as follows, this preparation method adopts Si/SiO2Sheet makes substrate, it is applicable to prepare III-V different race's semiconductor nanowires, using Bohemian glass pipe as grower, it starts softening when heating, bleeding cooling after a period of time, sealing outlet of collapsing because overpressure reduces, thus obtaining managing interior vacuum environment, when nano wire being stored directly in the vacuum environment of this Bohemian glass pipe after having prepared, it is prevented that oxidation; In the preparation, can by Si/SiO2Substrate is placed in quartz ampoule, it is possible to effectively prevent substrate from contacting with tube wall, it is to avoid polluting, can ensure the integrity of substrate at 1200 DEG C of temperature, no matter whether Bohemian glass pipe softens, the nano-material grown can well be saved in quartz ampoule; This novel Bohemian glass pipe can fix quartz ampoule, the substrate preventing from rocking and cause falls out quartz ampoule, what adopt can effectively avoid powder to rock two-tube with pertusate cone-shaped glass dividing plate and glass funnel, avoid substrate contamination powder, but do not affect the diffusion of steam, it is possible to realize the growth of nano wire well; This preparation method can be used for different III-V race's semiconductor nanowires of preparation, as InAs, GaAs, GaSb and other, there is versatility.
This preparation method is compared to traditional method, have the advantage that 1. traditional methods usually react generation III-V race's semiconductor nanowires with III independent race or V clan source material, need to regulate the many kinds of parameters such as supply, source temperature, underlayer temperature, carrier gas temperature, more complicated, and Bohemian glass pipe is mainly heated to assigned temperature (InAs:800 DEG C by this preparation method in heater; GaAs:850 DEG C; GaSb:600 DEG C) more than, the growth of nano wire can be realized, simplify control process; 2. traditional method has the high requirement of comparison for growth substrates, for a kind of III-V race's semi-conducting material, it is necessary to select specific nano wire just can carry out the preparation of nano wire, and this preparation method uses unified Si/SiO2Substrate, has good versatility; 3. traditional method needs complicated equipment to carry out the preparation of nano wire, and present invention only requires heating Bohemian glass pipe, as long as Bohemian glass pipe can be heated on assigned temperature by the heater of selection; 4. traditional method needs to take out it from device after preparing nano wire, cause that nano wire exposes oxidized in an atmosphere, form the oxide layer of 3-5nm, and this preparation method, nano wire without taking out, can be saved in for a long time in the fine vacuum of Bohemian glass pipe, it is prevented that oxidized after preparation, until when using, Bohemian glass pipe being broken and takes out.
Accompanying drawing explanation
Fig. 1 is a kind of Bohemian glass pipe schematic diagram.
In figure: 1-Bohemian glass pipe; 11-quartz ampoule; 12-Bohemian glass tubule; 3-Si/SiO2Substrate; 4-III-V race's semiconductor powder; 5-transitional glass pipe; 6-vacuum-pumping system.
Fig. 2 is a kind of novel Bohemian glass pipe schematic diagram.
In figure: 2-modified model Bohemian glass pipe; 21-cone-shaped glass dividing plate; 22-glass funnel; 23-quartz ampoule; 24-Glass rod; 3 '-Si/SiO2Substrate; 4 '-III-V race's semiconductor powders; 5 '-transitional glass pipe; 6-vacuum-pumping system.
Fig. 3 is diamond heating Bohemian glass pipe schematic diagram.
In figure: 1-Bohemian glass pipe; 7-tube furnace.
Fig. 4 is InAs nanowire growth temperature curve.
Fig. 5 A is the scanning electron microscope image of the InAs nano wire of growth.
Fig. 5 B is the transmission electron microscope image of the InAs nano wire of growth.
Fig. 5 C is the full resolution pricture of the transmission electron microscope of the InAs nano wire of growth.
Fig. 5 D is Fourier's variation diagram of the InAs nano wire of growth.
Fig. 5 E is the X-ray energy spectrogram of single InAs nano wire.
Fig. 6 A is the scanning electron microscope image of the GaAs nano wire of growth.
Fig. 6 B is the transmission electron microscope image of the GaAs nano wire of growth.
Fig. 6 C is the full resolution pricture of the transmission electron microscope of the GaAs nano wire of growth.
Fig. 6 D is Fourier's variation diagram of the GaAs nano wire of growth.
Fig. 6 E is the X-ray energy spectrogram of single GaAs nano wire.
Fig. 7 A is the scanning electron microscope image of the GaSb nano wire of growth.
Fig. 7 B is the transmission electron microscope image of the GaSb nano wire of growth.
Fig. 7 C is the full resolution pricture of transmission electron microscope.
Fig. 7 D is Fourier's variation diagram of the GaSb nano wire of growth.
Fig. 7 E is the X-ray energy spectrogram of single GaSb nano wire.
Fig. 8 is the Raman shift spectrogram of InAs, GaAs, GaSb nano wire.
Fig. 9 is the scanning electron microscope image of the GaSb nano wire of growth.
Detailed description of the invention
Features described above and advantage for making the present invention can become apparent, special embodiment below, and coordinate institute's accompanying drawing to be described in detail below.
Embodiment 1
The present embodiment adopts the preparation method of III-V race's semiconductor nanowires provided by the invention to prepare InAs nano wire, specifically comprises the following steps that
1. substrate prepares: from the Si/SiO of 4 inches2Sheet cuts out the slice, thin piece of 6mm × 6mm as substrate, the Si/SiO that will cut2Substrate is sequentially placed in acetone, ethanol ultrasonic 5 minutes, after deionized water rinsing, dries up with nitrogen; Use clean syringe that 10nm gold grain aqueous solution is dropped in Si/SiO2On substrate, it is placed in baking box and heats, until liquid all volatilizees complete.
2. growth material filling: use Bohemian glass tubule (external diameter: 8mm, internal diameter: 6mm, length: 2cm, one end closure) load InAs powder, use quartz glass tubule (external diameter: 8mm, internal diameter: 6mm, length: 2cm a, end closure) Si/SiO that processed of loading2Substrate, is placed in Bohemian glass pipe (external diameter: 12mm, internal diameter: 8.5mm, length: 20cm, an end closure), as shown in Figure 1 by above-mentioned two tubule.
3. vacuum seal: transitional glass on Bohemian glass tube opening terminates, again through the vacuum-pumping system adding mechanical pump in thermally coupled, diffusion pump is constituted, is exhausted; Exhaust process is toasted by baking box, sets baking temperature as 200 DEG C. By the baking aerofluxus of 4 hours, the vacuum in Bohemian glass pipe was up to 1 × 10-4Pa, the at this moment junction of heating Bohemian glass pipe and vacuum-pumping system, due to hot mastication effect, air can compress glass tube walls so that Bohemian glass pipe realizes at the dotted line place of Fig. 1 sealing, and is cooled back to room temperature.
4. growth course: the Bohemian glass pipe after sealing is put in tube furnace, is set in 800 DEG C, keeps 5 minutes, by Temperature fall, InAs nano wire can be grown.
Fig. 4 is InAs nanowire growth typical temperature profile, this figure is drawn by observed temperature and forms, from in figure, growth temperature is set as: be heated to 100 DEG C from room temperature through 5 minutes, maintain 10 minutes at 100 DEG C, it is primarily intended to test heating system, additionally also evaporates steam, get rid of the impact that steam is likely to system is caused; 100 DEG C were heated to 750 DEG C through 10 minutes, maintained 5 minutes at 750 DEG C, were primarily intended to prevent heating system from continuing full power heating, caused that heating-up temperature exceedes default 800 DEG C; 750 DEG C were heated to 800 DEG C through 5 minutes, then maintained Temperature fall after 5 minutes at 800 DEG C.
Shown in the InAs nano wire such as Fig. 5 A～5E of preparation, Fig. 5 A shows that InAs nano wire is at Si/SiO2Substrate has bigger density; Fig. 5 B shows that InAs nano wire has more than the length of 4um, and diameter is about 20nm; Fig. 5 C is the regional enlarged drawing of dashed rectangle in Fig. 5 B, and the InAs nano wire of this high-resolution picture display growth has good crystal structure, and two crystal faces that in figure, two-wire labelling closes on mutually, its interplanar distance isArrow institute label orientation is the direction of crystal growth, is<111>direction of InAs lattice; Fig. 5 D is Fourier's variation diagram, it is shown that this InAs crystal has well single lattice, and this figure shows that the incident direction of transmission electron microscope electron beam is [1-10], and lattice point representative shown in figure is 002 and 111; In Fig. 5 E it can be seen that nano wire be mainly composed of In and As, the two ratio is 1:1, copper be carrying nano wire copper mesh contained by.
Embodiment 2
The present embodiment prepares GaAs nano wire, novel Bohemian glass pipe as shown in Figure 2 is adopted to replace the Bohemian glass pipe of embodiment 1, do not need Bohemian glass tubule, quartz ampoule, this each arm of Bohemian glass pipe size and embodiment 1 in essentially identical, preparation method and parameter and embodiment 1 are identical, except the temperature set in step 4 is as 850 DEG C.
As shown in figs 6 a-6e, Fig. 6 A shows that GaAs nano wire is at Si/SiO to the GaAs nano wire of preparation2Having bigger density on substrate, the GaAs nano wire shown in figure has more than the length of 10um, and diameter Distribution is 80nm to 200nm; GaAs nano wire shown in Fig. 6 B has more than the length of 4um, and diameter is about 80nm; Fig. 6 C is the regional enlarged drawing of dashed rectangle in Fig. 6 B, and this high-resolution picture shows, the InAs nano wire of growth has good crystal structure, and two crystal faces that in figure, two-wire labelling closes on mutually, its interplanar distance isArrow institute labelling aspect is the direction of crystal growth, is<112>direction of GaAs lattice; Fig. 6 D is Fourier's variation diagram, and display crystal has well single lattice, and this figure shows that the incident direction of transmission electron microscope electron beam is [110], and wherein representative shown in figure lattice point is 202 and 022; Fig. 6 E it can be seen that nano wire be mainly composed of Ga and As, the two ratio is 1:1, copper be carrying nano wire copper mesh contained by.
Embodiment 3
The present embodiment prepares GaSb nano wire, method and parameter and embodiment 2 is identical, except the temperature set in step 4 is as 600 DEG C.
Shown in the GaSb nano wire such as Fig. 7 A～7E of preparation, the GaSb nano wire shown in Fig. 7 A has more than the length of 30um, and diameter Distribution is 80nm to 200nm; GaSb nano wire shown in Fig. 7 B has more than the length of 5um, and diameter is about 80nm; Fig. 7 C is the regional enlarged drawing of dashed rectangle in Fig. 7 B, and this high-resolution picture shows, the GaSb nano wire of growth has good crystal structure, and two crystal faces that in figure, two-wire labelling closes on mutually, its interplanar distance isArrow institute labelling aspect is the direction of crystal growth, is<111>direction of InAs lattice; Fig. 7 D is Fourier's variation diagram, and display crystal has well single lattice, and this figure shows that the incident direction of transmission electron microscope electron beam is [1-10], and wherein representative shown in figure lattice point is 111 and 111; In Fig. 7 E it can be seen that nano wire be mainly composed of Ga and Sb, the two ratio is 1:1, copper be carrying nano wire copper mesh contained by.
Fig. 8 is the Raman shift spectrogram of InAs, GaAs, GaSb nano wire, and wherein the main peak of InAs nano wire is positioned at 216cm-1And 233cm-1, the main peak of GaAs nano wire is positioned at 265cm-1And 287cm-1, the main peak of GaSb nano wire is positioned at 224cm-1And 233cm-1. Learnt by this figure, III-V race's semiconductor nanowires and III-V race's quasiconductor bulk material of all generations have comparatively close Raman peak values, and also secondary evidence uses III-V race's semiconductor nanowires that this preparation method is produced to have good purity.
Embodiment 4
The present embodiment is made comparisons with embodiment 3, and same preparation GaSb nano wire, preparation method, parameter, equipment are all identical, but the temperature in step 4 is set as 850 DEG C, have exceeded the growing threshold 600 DEG C of InAs nano wire. It is known that GaSb nano wire also has significantly high yield from Fig. 9. Thus it is found that after reaching enough temperature, nano wire just can obtain enough source material vapors and realize growth, can realize the growth of nano wire, have bigger growth temperature range more than growing threshold temperature.
Why embodiment 2～4 adopts novel Bohemian glass pipe; it is in that the Bohemian glass pipe implemented in 1 is single tube structure; once single tube is inverted; powder may be diffused on substrate; pollute substrate surface, it addition, substrate likely departs from from quartz ampoule; it is scattered in Bohemian glass pipe, loses the protection to substrate.
Novel Bohemian glass pipe adopts two-tube, and it is provided with special construction in inside, have an advantage in that, powder is limited in an arm, cone-shaped glass dividing plate only leaves aperture, steam can be allowed after the heating to be full of chamber, realize growth, have aperture between powder and substrate, have bending, can effectively prevent powder because of the vibrations of Bohemian glass pipe, inversion, and pollute substrate; Steam can be delivered to substrate surface by glass funnel, and is possible to prevent Si/SiO2Substrate is left out from quartz ampoule; Glass funnel and Glass rod with the use of, it is possible to fixing to greatest extent load Si/SiO2The quartz ampoule of substrate.
Two-tube relative to single tube, its function is the same, such as through heating evaporation, is evaporated in atmosphere by III-V race's semiconductor powder, by lowering the temperature, it is possible to by steam condensation to substrate, it is achieved nanowire growth. Different is in that, single tube structure is the most simple mechanism realizing growth in laboratory, but in use should be noted that and can not be inverted, and can not have strenuous vibration, and two-tube structure relative complex, it is possible to well prevent powder and substrate mixing so that the preparation of nano wire is insured more.
Comparative example
This comparative example and embodiment 1 compare, adopting traditional chemical gaseous phase depositing process to prepare InAs nano wire, use InAs powder as solid material, downstream use InAs single crystalline substrate sprinkles gold grain and grows, heating-up temperature is 800 DEG C, and carrier gas flux is 100sccm.
Embodiment form is as follows:
Being learnt by this embodiment form, preparation method provided by the invention is compared with traditional method, and advantage is in that:
This preparation method uses cheap Si/SiO2Sheet just can realize the growth of multiple nano wire, and the epitaxial growth of traditional method needs suitable substrate; Carrier gas need not grow, it is not necessary to regulation and control III-V ratio, simplify growth technique; Temperature-fall period is mainly utilized to grow, it is possible to reach the productivity close to 100%, and traditional method mainly grows at constant temperature zone, if there being a condition improper, just cannot grow nano wire; The nano wire prepared is stored directly in the Bohemian glass pipe of fine vacuum, Bohemian glass pipe is broken during use, the long-time preservation of nano wire fine vacuum can be realized, and the nano wire that traditional method grows out, extraction device is needed after growth, necessarily make nano wire be exposed in air, cause that nano wire aoxidizes.
Claims (10)
1. a preparation method for III-V race's semiconductor nanowires, comprises the steps:
1)Si/SiO2Substrate, after purified treatment, drips on surface and spreads gold grain aqueous solution, then make moisture volatilize completely;
2) by step 1) Si/SiO that processed2Substrate and a kind of III-V race's semiconductor powder are separately placed in heating aerofluxus in same Bohemian glass pipe, then cool down, seal;
3) by step 2) the Bohemian glass pipe that processed by heater high-temperature heating, then cooling acquisition III-V race's semiconductor nanowires.
2. preparation method according to claim 1, it is characterised in that described Si/SiO2The purifying treatment method of substrate is, by this Si/SiO2Substrate immerses ultrasonic at least 5 minutes of difference in acetone, ethanol successively, then with deionized water rinsing, dries up with nitrogen after taking-up.
3. preparation method according to claim 1, it is characterised in that described gold grain be sized to 10nm, density is 1000ppm.
4. preparation method according to claim 1, it is characterised in that described step 2) in, by Si/SiO2Substrate is placed in a quartz ampoule, then is placed in by quartz ampoule in described Bohemian glass pipe;III-V race's semiconductor powder is placed directly within described Bohemian glass pipe, or is first placed in a Bohemian glass tubule, then this Bohemian glass tubule is placed in described Bohemian glass pipe.
5. preparation method according to claim 4, it is characterised in that described Si/SiO2The width of substrate is equal with quartz ampoule internal diameter, and length is less than quartz ampoule length.
6. preparation method according to claim 1, it is characterized in that, described step 2) in, the outlet of described Bohemian glass pipe connects a vacuum-pumping system by the transitional glass pipe of both ends open, baking also aerofluxus at least 4 hours are carried out in the baking oven not higher than 300 DEG C, then being evacuated, vacuum is 1 × 10-4Pa, then to Bohemian glass pipe thermoplastic to seal outlet.
7. preparation method according to claim 6, it is characterised in that described vacuum-pumping system includes mechanical pump and diffusion pump.
8. preparation method according to claim 1, it is characterised in that described heater is tube furnace, to this tube furnace extracting vacuum under high-temperature heating state, and passes into nitrogen, and holding furnace intracavity vacuum is 1KPa, Temperature fall again after continuing at least 5 minutes.
9. preparation method according to claim 1, it is characterised in that described III-V race's semiconductor powder is InAs, GaAs and GaSb powder.
10. a novel Bohemian glass pipe, for the preparation method described in claim 1 to 9 any claim, including two arms, bottom lock, top connects and exports together with one altogether; Arm one is provided with a pertusate cone-shaped glass dividing plate of band; Arm two is provided with a quartz ampoule and a glass funnel, and described quartz ampoule bottom lock also passes through bottom Glass rod and this arm affixed; The big mouth of described glass funnel is connected with the inwall of arm two, and osculum gos deep into inside quartz ampoule.
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| CN111554567A (en) * | 2020-05-18 | 2020-08-18 | 中国科学院半导体研究所 | Nano linear dirac semimetal cadmium arsenide and preparation method thereof |
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| CN104313548A (en) * | 2014-10-08 | 2015-01-28 | 上海理工大学 | Preparation method of gallium nitride nanowires |
| CN104695020A (en) * | 2015-03-05 | 2015-06-10 | 湖南大学 | Strip InAs nanobelt, and preparation and application thereof |
| CN105019028A (en) * | 2015-07-13 | 2015-11-04 | 北京大学 | Method for preparing InAs nanowires with specific morphology and crystal structure |
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| CN104313548A (en) * | 2014-10-08 | 2015-01-28 | 上海理工大学 | Preparation method of gallium nitride nanowires |
| CN104695020A (en) * | 2015-03-05 | 2015-06-10 | 湖南大学 | Strip InAs nanobelt, and preparation and application thereof |
| CN105019028A (en) * | 2015-07-13 | 2015-11-04 | 北京大学 | Method for preparing InAs nanowires with specific morphology and crystal structure |
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