CN105636264B - LED photovoltaic module and its driving chip - Google Patents
LED photovoltaic module and its driving chip Download PDFInfo
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- CN105636264B CN105636264B CN201510923728.6A CN201510923728A CN105636264B CN 105636264 B CN105636264 B CN 105636264B CN 201510923728 A CN201510923728 A CN 201510923728A CN 105636264 B CN105636264 B CN 105636264B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/40—Details of LED load circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/50—Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDs; responsive to LED life; Protective circuits
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
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Abstract
The present invention discloses a kind of LED photovoltaic module and its driving chip.The LED drive chip, for driving LED light source, including:Supply unit; overheat protector point adjustment unit and over-temperature protection unit and negative-feedback amplifier unit; the supply unit provides the power supply of stabilization for the LED drive chip; the overheat protector point adjustment unit is used for the overheat protector point for adjusting the LED drive chip; the over-temperature protection unit is used for according to the overheat protector point; overheat protector is carried out to the LED drive chip, the negative-feedback amplifier unit is used for the LED drive chip and exports the constant electric current driving LED light source.The LED photovoltaic module and its driving chip of the present invention, which has, prevents LED drive chip from being burnt caused by temperature is excessive, effectively extends the service life of LED light source device, and beneficial effect of low cost.
Description
Technical field
The present invention relates to the actuation techniques field of LED light source, is driven more particularly to a kind of LED photovoltaic module and its LED
Chip.
Background technology
LED light source because with it is environmentally protective, service life is long, energy saving, performance is stable, light efficiency is high and small etc. excellent
Point, has been widely used to various lighting areas, such as room lighting, automobile, consumption electronic products at present.
At present, developing rapidly with LED technology, LED light source have been widely applied in high-power illumination equipment.And mesh
Need LED numbers more on preceding high-power illumination, some up to up to a hundred.A kind of recent LED photovoltaic module is widely used,
The LED photovoltaic module includes substrate and the LED drive circuit and LED light that set on the substrate, which includes
LED drive chip and necessary other circuit elements.The LED photovoltaic module can both be independently used for illuminating, and also may be mounted to LED
On the base of lighting apparatus, assembled with lampshade etc., it is convenient without excessive circuit design of consideration LED etc., production and assembly.
Larger proportion is accounted for yet with heat in LED light source, when the LED drive chip working time is long, overheat or temperature can be in
High state is spent, severe patient burns out LED drive chip, substantially reduces the service life of LED illumination device.
Therefore, it is necessary to propose a kind of new scheme, solve the above problems.
The content of the invention
The present invention is based on above one or more problem, there is provided a kind of LED photovoltaic module and its driving chip, to
Solve that LED drive chip temperature is excessive in the prior art causes LED drive chip to be burnt, influence asking for LED light source service life
Topic.
The present invention provides a kind of LED drive chip, for driving LED light source, including:Supply unit, overheat protector point tune
Section unit and over-temperature protection unit and negative-feedback amplifier unit, the supply unit provide stabilization for the LED drive chip
Power supply, the overheat protector point adjustment unit is used to adjust the overheat protector point of the LED drive chip, the overheat protector
Unit is used for according to the overheat protector point, and overheat protector is carried out to the LED drive chip, and the negative-feedback amplifier unit is used
Constant electric current, which is exported, in the LED drive chip drives the LED light source, wherein, the over-temperature protection unit, including：Base
Quasi- electric current input unit, resistance adjustment unit, comparing unit, negative temperature coefficient voltage generating unit and linear current output are adjusted
Unit is saved, the reference current input unit produces an adjustable reference voltage of size with the resistance adjustment unit；Institute
State the negative temperature system that negative temperature coefficient voltage generating unit produces a size reduction with the temperature rise of the LED drive chip
Number voltage；It is described negative to control with the size of the reference voltage that the comparing unit is used for the negative temperature coefficient voltage
The output of temperaturecoefficient voltage；Electricity of the linear current output adjustment unit according to the negative temperature coefficient voltage generating unit
Buckling, adjusts exported linear current size to control the operating current of the LED drive chip；The overheat protector list
Member further includes：Switch control unit, buffering capacitor cell, bias current generation unit, the switch control unit are used for foundation
The comparing unit negative temperature coefficient voltage and the comparison signal after the reference voltage, are turned on and off described
LED drive chip；The buffering capacitor cell, described buffering capacitor cell one end are connected to the input terminal of the comparing unit,
The other end is connected to the output terminal of the comparing unit；The bias current generation unit, for for the over-temperature protection unit
Bias current is provided；The buffering capacitor cell includes：Delay cell and capacitor cell, the delay cell are used to drive in LED
When dynamic chip temperature raises suddenly, the time that the switch control unit performs shutoff operation is postponed；The capacitor cell is used for
Filtering clutter, stablizes the electric current of the over-temperature protection unit.
It is preferred that the LED drive chip further includes：Invariable power unit, for ensureing the LED drive chip constant
Work under power.
It is preferred that the supply unit includes：Power supply unit, bias voltage units and band-gap reference power supply unit, it is described
Power supply unit is powered for the bias voltage units and the band-gap reference power supply unit；The bias voltage units are the mistake
Temperature protection point adjustment unit and over-temperature protection unit and negative-feedback amplifier unit provide the bias voltage needed for work；The band
Gap reference power supply unit is used to carry to the overheat protector point adjustment unit and over-temperature protection unit and negative-feedback amplifier unit
For benchmark job voltage.
It is preferred that the negative-feedback amplifier unit includes：Negative-feedback amplifier module and anti-die block excessively, the negative-feedback fortune
Amplification module ensures the voltage stabilization of LED drive chip output, it is described it is anti-cross die block be used to preventing instantaneous voltage excessive and
Burn the LED drive chip.
It is preferred that the circuit of the negative-feedback amplifier module is specially：From power supply inflow current to the 70th field-effect tube
With the 71st field-effect tube, the source electrode of the 70th field-effect tube and the source electrode of the 71st field-effect tube are connected, and one
One bias voltage is connected to the grid of the 70th field-effect tube and the grid of the 71st field-effect tube, the 70th field-effect tube
Drain electrode is connected to the source electrode of the 73rd field-effect tube and the source electrode of the 72nd field-effect tube；One reference voltage end connection the 7th
The grid of the grid of 12 field-effect tube and the 74th field-effect tube, after the source electrode of the 74th field-effect tube is connected with drain electrode
Ground connection；The grid of drain electrode the 75th field-effect tube of connection of 73rd field-effect tube and drain electrode and the 76th field-effect
The grid of pipe, the source electrode of the 75th field-effect tube and the source electrode of the 76th field-effect tube are grounded after being connected；72nd
The drain electrode of effect pipe is connected to source electrode and the drain electrode of the 77th field-effect tube, and the source electrode of the 77th field-effect tube and drain electrode
It is connected, the grid of the 77th field-effect tube is connected to the drain electrode and of the 71st field-effect tube after the 35th resistance
The drain electrode of 78 field-effect tube；The source electrode ground connection of 78th field-effect tube, and grid connects the 77th field-effect tube
Drain electrode；The drain electrode of 71st field-effect tube and drain electrode and the output terminal phase of negative-feedback amplifier unit of the 79th field-effect tube
Connection.
It is preferred that the overheat protector point adjustment unit includes：Amplifier module, current mirror module, Current amplifier module, can
Become resistance unit, the amplifier module, which is used to providing band, carries voltage, ensures to provide stabilization in multiple loads or while loading larger
Voltage, electric current that the current mirror module exports the amplifier module provides an image current, the Current amplifier mould
Block is used to the image current being amplified by preset multiple, and the variable resistance unit is used to set overheat protector point big
It is small.
It is preferred that the current mirror module includes：30th field-effect tube and the 31st field-effect tube, wherein, it is described
The source electrode of 30th field-effect tube and the source electrode of the 31st field-effect tube are connected with power supply, the grid of the 30th field-effect tube
The grid of pole, drain electrode and the 31st field-effect tube is connected with the Current amplifier module, the 31st field-effect tube
Drain electrode output overheat protector electric current.
The present invention also provides a kind of LED photovoltaic module, the LED photovoltaic module includes substrate, on the substrate
LED light source and LED drive circuit, the LED drive circuit include LED drive chip, wherein, the LED drive chip is such as
Preceding any one of them LED drive chip.
The LED photovoltaic module and its driving chip of the present invention, which has, prevents LED drive chip from being burnt caused by temperature is excessive
Ruin, effectively extend the service life of LED light source device, and beneficial effect of low cost.
Brief description of the drawings
Fig. 1 is the structure diagram of the LED drive chip of the LED photovoltaic module of present pre-ferred embodiments.
Fig. 2 is the structure diagram of the supply unit shown in Fig. 1.
Fig. 3 is the electrical block diagram of the power supply unit in Fig. 2.
Fig. 4 is the structure diagram of the overheat protector point adjustment unit shown in Fig. 1.
Fig. 5 is the electrical block diagram of the overheat protector point adjustment unit shown in Fig. 4.
Fig. 6 is the structure diagram of the over-temperature protection unit shown in Fig. 1.
Fig. 7 is the electrical block diagram of the over-temperature protection unit shown in Fig. 6.
Fig. 8 is the structure diagram of the negative-feedback amplifier unit shown in Fig. 1.
Fig. 9 is the electrical block diagram of the unit of negative-feedback amplifier shown in Fig. 8.
Embodiment
The present invention is described in detail with reference to the accompanying drawings and examples.If it should be noted that do not conflicted, this hair
Each feature in bright embodiment and embodiment can be combined with each other, within protection scope of the present invention.
Embodiment 1
Fig. 1 is referred to, Fig. 1 is the structural representation of the LED drive chip of the LED photovoltaic module of present pre-ferred embodiments
Figure.As shown in Figure 1, the LED photovoltaic module of the present invention belongs to an important component of LED light source device, LED light source device
Base and lampshade etc. are further included on the basis of the LED light source module.The LED light source module includes LED drive chip, it is used for
LED light source is driven, is mainly included：Supply unit 21, overheat protector point adjustment unit 24 and over-temperature protection unit 23 and negative anti-
Amplifier unit 25 is presented, the supply unit 21 provides the power supply of stabilization for the LED drive chip, and the overheat protector point is adjusted
Unit 24 is used for the overheat protector point for adjusting the LED drive chip, and the over-temperature protection unit 23 is used for according to the excess temperature
Point is protected, overheat protector is carried out to the LED drive chip, the negative-feedback amplifier unit 25 is used for the LED drive chip
Export constant electric current and drive the LED light source.
The present invention is by setting overheat protector point adjustment unit 24 and over-temperature protection unit 23 and negative-feedback amplifier unit
25 so that LED drive chip will not cause LED drive chip to be burnt because temperature is excessive, effectively extend making for LED light source device
With the service life, and it is simple in structure, it is of low cost.
Further, the LED drive chip further includes：Invariable power unit 22, for ensureing that the LED drive chip exists
Operated at constant power.By setting invariable power unit 22, the present invention can ensure that LED drive chip is in constant work(well
Work under rate, reduce circuit because voltage or electric current change dramatically power increase suddenly or reduction caused by, influence LED light source
The problem of service life.
Fig. 2 is referred to, Fig. 2 is the structure diagram of the supply unit shown in Fig. 1.It is as shown in Fig. 2, specific real at one
Apply in example, the supply unit 21 includes：Power supply unit 212, bias voltage units 211 and band-gap reference power supply unit 213, institute
Power supply unit 212 is stated to power for the bias voltage units 211 and the band-gap reference power supply unit 213；The bias voltage
Unit 211 provides work for the overheat protector point adjustment unit 24 and over-temperature protection unit 23 and negative-feedback amplifier unit 25
Required bias voltage；The band-gap reference power supply unit 213 is used to protect to the overheat protector point adjustment unit 24 and excess temperature
Protect unit 23 and negative-feedback amplifier unit 25 provides benchmark job voltage.
Fig. 3 is referred to, Fig. 3 is the electrical block diagram of the power supply unit in Fig. 2.As shown in figure 3, the electricity of power supply unit
Road is as follows：Supply voltage D1 flows into the drain electrode of high voltage bearing J-type-field-effect tube M44, the source electrode difference of J-type-field-effect tube M44
It is connected to drain electrode, the collector and source resistance R5 of the first power transistor Q3 of the field-effect tube M45 as electrostatic protection
One end.The grid of J-type-field-effect tube M44 is connected respectively to the collector and base stage, the first power supply of second source transistor Q2
The base stage of transistor Q3 and the other end of source resistance R5.The emitter connection Zener diode D1 of second source transistor Q2
Ground terminal GND is connected afterwards.The emitter output supply voltage VCC of first power transistor Q3.Field-effect as electrostatic protection
The source electrode of pipe M45 is grounded after being connected with grid.
Fig. 4 and Fig. 5 are referred to, Fig. 4 is the structure diagram of the overheat protector point adjustment unit shown in Fig. 1, and Fig. 5 is Fig. 4
The electrical block diagram of shown overheat protector point adjustment unit.As shown in Figure 4 and Figure 5, overheat protector point adjustment unit 24
Including amplifier module 241, current mirror module 242, Current amplifier module 243, variable resistance unit 245, amplifier module 241 provides
Band carries voltage, ensures in multiple loads or stable voltage is provided when loading larger, current mirror module 242 is to amplifier module
The electric currents of 241 outputs provide an image currents, this image current can be according to being necessarily drawn to set.Current amplifier module
243 are amplified image current by preset multiple, and variable resistance unit 245 is used to set overheat protector point, as resistance becomes larger,
Overheat protector point is higher, also just says that LED drive chip is operated within the temperature range of higher., can by setting overheat protector point
With the actual conditions according to LED light source, control over-temperature protection unit opens overheat protector in due course.
Further, overheat protector point adjustment unit 24 further includes zero compensation capacitance module 246, the zero compensation capacitance
Module 246 is used in backfeed loop, when phase field degree is inadequate, prevents circuit self-excitation.
Further, overheat protector point adjustment unit 24 further includes anti-static module 244, for preventing circuit from producing electrostatic
Infringement.
Fig. 5 is referred to, the circuit structure of the overheat protector point adjustment unit 24 is specific as follows：
Amplifier module 241 includes amplifier input submodule, amplifier output sub-module, amplifier regulation resistance.Specifically, transporting
Put in input submodule, the first bias voltage of bias voltage units 211 provides end VPB1's and the 26th field-effect tube M26
The grid connection of grid, the 27th field-effect tube M27, the source electrode of the 26th field-effect tube M26 are connected with power supply VCC, the
The drain electrode of 26 field-effect tube M26 is connected with the drain electrode of the 39th field-effect tube M39, the 39th field-effect tube M39's
Second bias voltage of grid and bias voltage units 211 provides end VPB2 and be connected, the source electrode of the 39th field-effect tube M39 and
The drain electrode connection of 43rd field-effect tube M43, the grid of the 43rd field-effect tube M43 connect the 39th field-effect tube
The drain electrode of M39, source electrode, the 42nd field-effect of the source electrode and the 41st field-effect tube M41 of the 43rd field-effect tube M43
The source electrode connection of pipe M42.The source electrode connection power supply VCC of 27th field-effect tube M27, the leakage of the 27th field-effect tube M27
Pole connects the source electrode of the 34th field-effect tube M34 and the source electrode of the 35th field-effect tube M35.34th field-effect tube
The grid of M34 is connected with the output terminal Vbg of band-gap reference power supply unit 213, the drain electrode of the 34th field-effect tube M34 connection the
The drain electrode of 41 field-effect tube M41 and the source electrode of the 36th field-effect tube M36, the grid of the 36th field-effect tube M36
End VPB2 is provided with the second bias voltage to be connected, the grid of the 41st field-effect tube M41 is connected to the 39th field-effect tube
The drain electrode of M39.35th field-effect tube M35 drain electrode connection the 37th field-effect tube M37 source electrode and the 42nd
The drain electrode of effect pipe.In amplifier output sub-module, power supply VCC inputs the source electrode and the 20th of the 28th field-effect tube M28
The source electrode of nine field-effect tube M29, and the grid of the grid of the 28th field-effect tube M28 and the 29th field-effect tube M29 connect
It is connected to the drain electrode of the 36th field-effect tube M36 of amplifier input submodule, the drain electrode and the 3rd of the 28th field-effect tube M28
The source electrode of 12 field-effect tube M32 is connected, and the drain electrode of the 29th field-effect tube M29 is with the 33rd field-effect tube M33's
Source electrode is connected.The drain electrode of 32nd field-effect tube M32 is connected to the 36th field-effect tube M36 of amplifier input submodule
Drain electrode, the drain electrode of the 33rd field-effect tube M33 is connected to the leakage of the 37th field-effect tube M37 of amplifier input submodule
Pole.The source electrode of 37th field-effect tube M37 is connected with the drain electrode of the 42nd field-effect tube M42.
The grid that minimum capacity compensating module 246 includes the 40th field-effect tube M40 is connected to the 3rd of amplifier module 241
The drain electrode of 17 field-effect tube M37 and the grid of the 38th field-effect tube M38, the source electrode of the 40th field-effect tube M40 and leakage
It is grounded after being extremely connected.
Current mirror module 242 includes：30th field-effect tube M30 and the 31st field-effect tube M31.Wherein, the 30th
The source electrode of the source electrode of field-effect tube M30 and the 31st field-effect tube M31 are connected with power supply VCC, the 30th field-effect tube M30's
The grid of grid, drain electrode and the 31st field-effect tube M31 is with the 38th field-effect tube M38's of Current amplifier module 243
Drain electrode is connected, the drain electrode output overheat protector electric current IOUT-RTH of the 31st field-effect tube M31.
Current amplifier module 243 includes：The drain electrode connection of 38th field-effect tube M38, the 38th field-effect tube M38
The output terminal of current mirror module 242, the drain electrode of the 37th field-effect tube M37 of grid connection amplifier module 241, source electrode connection
Variable resistance unit 245.
Variable resistance unit 245 includes：At least one variable resistor RTH, by varying the resistance value of variable resistor RTH, is adjusted
Overheat protector point is saved, so as to protect LED drive chip to be operated within the scope of appropriate temperature.Further, series electrical is further included
Hinder R8 and resistance R9.
Anti-static module 244 includes resistance R7.
The regulation resistance R6 to connect with resistance R7 is used for the voltage and power supply unit 212 for making band-gap reference power supply unit 213
Voltage it is equal, i.e. Vbg=VCC.
Fig. 6 and Fig. 7 are referred to, Fig. 6 is the structure diagram of the over-temperature protection unit shown in Fig. 1；Fig. 7 is shown in Fig. 6
The electrical block diagram of over-temperature protection unit.As shown in Figure 6 and Figure 7, the LED drive chip of presently preferred embodiments of the present invention
Over-temperature protection unit (or excess temperature adjusting circuit), for adjusting temperature during LED drive chip work.The over-temperature protection unit
Including：Reference current input unit 11, resistance adjustment unit 12, comparing unit 18, negative temperature coefficient voltage generating unit 17 with
And linear current output adjustment unit 16, the reference current input unit 11 produce one big with the resistance adjustment unit 12
Small adjustable reference voltage, wherein, resistance adjustment unit 12 is according to temperature change, adjusting resistance value size, or according to reality
Border needs that resistance is adjusted, and can so change the size of reference voltage.The negative temperature coefficient voltage generating unit 17 with
The temperature rise of the LED drive chip produces the negative temperature coefficient voltage that a size reduces.Wherein, negative temperature coefficient voltage
Refer to that the change of voltage and LED drive chip temperature change are negatively correlated, with the rise of temperature, the production of negative temperature coefficient voltage
The magnitude of voltage that raw unit 17 produces reduces.The comparing unit 18 is used for the negative temperature coefficient voltage and benchmark electricity
The size of pressure is to control the output of the negative temperature coefficient voltage.The linear current exports adjustment unit 16 according to the subzero temperature
The voltage change of coefficient voltages generation unit 17 is spent, adjusts exported linear current size to control the LED drive chip
Operating current.
The present invention can not only adjust reference voltage size flexibly to change overheat protector by above-mentioned structure design
Point, realizes voltage output control using simple comparing unit, both simplifies circuit structure, reduce cost, and prevent LED
Driving chip causes LED drive chip to be burnt because temperature is excessive, so as to extend the service life of LED light source device.
Further, the over-temperature protection unit further includes：Switch control unit 15, the switch control unit 15 are used for
According to the comparison signal after the comparing unit 18 negative temperature coefficient voltage and the reference voltage, it is turned on and off
The LED drive chip.Specifically, comparing unit 18 is used for the negative temperature coefficient voltage and the reference voltage
Size, when compare the negative temperature coefficient voltage it is bigger than the reference voltage when, then negative temperature coefficient voltage generating unit 17
Continue to output voltage to the linear current and export adjustment unit 16, then linear electric current output adjustment unit 16 is driven for LED
Dynamic chip provides operating current, and switch control unit 15 is in opening at this time；When comparing the negative temperature coefficient voltage
During equal to or less than the reference voltage, illustrate that the temperature of LED drive chip is excessive, have been over default temperature, switch
Control unit 16 closes LED drive chip.
In the embodiment of a deformation, after using for a longer period, light efficiency is deteriorated LED light source device, to ensure luminance
Degree, it will usually improve brightness by increasing electric current, so at this time, the heat rise that LED drive chip produces can be very fast, this is just needed
Reference voltage is suitably adjusted by resistance adjustment unit, reference voltage is improved, so that switch control unit 16 shifts to an earlier date one
A time closes LED drive chip, prevents LED drive chip to be burned, extends the service life of LED light source device.
Further, the over-temperature protection unit further includes：Buffer capacitor cell 14,14 one end of the buffering capacitor cell
The input terminal of the comparing unit 18 is connected to, the other end of the buffering capacitor cell 14 is connected to the comparing unit 18
Output terminal.The electric current that the buffering capacitor cell 18 is used to make to be output to linear current output adjustment unit 16 is stablized, and filters out miscellaneous
Ripple, slows down the closing of LED drive chip, avoids impacting LED light source device.
Further, the over-temperature protection unit includes：Bias current generation unit 13, for for the overheat protector list
Member provides bias current, and working power is provided for whole over-temperature protection unit.
Fig. 7 is referred to, the concrete structure of the over-temperature protection unit of present pre-ferred embodiments is as follows：
Since IOTP2 ends (over-temperature protection unit input terminal), a constant bias current is provided to string from IOTP2 ends
One end ground connection of resistance R1, R2, R3, R4 of connection, resistance R1, wherein resistance R1 is in parallel with temperature spot regulation resistance IOUT RTH,
By varying the resistance value of temperature spot regulation resistance IOUT RTH, to change the voltage exported between IOTP2 ends and resistance R4, this
Reference voltage of a voltage as over-temperature protection unit.Wherein, resistance R1, R2, R3 and R4 and the temperature spot regulation resistance
IOUT RTH form the resistance adjustment unit 12 of the present invention.Reference voltage is output to a delay cell all the way, and the delay is single
Member includes the field-effect tube of several series connection, specifically, in the preferred embodiment, for the first field-effect tube of series connection
M1, the second field-effect tube M2, the 3rd field-effect tube M3, the 4th field-effect tube M4, in practice, can set field to imitate according to needing
Should pipe quantity.The delay cell be used for when temperature raises suddenly, postpone switch control unit 15 perform shutoff operation when
Between.The delay cell is connected to capacitor cell, which includes several field-effect tube in parallel, specifically, in this hair
In bright preferred embodiment, for the 5th field-effect tube M5 in parallel, the 6th field-effect tube M6, the 7th field-effect tube M7, the 8th
Effect pipe M8 and the 9th field-effect tube M9, is grounded after the 9th field-effect tube M9.The capacitor cell can filtering clutter, make the mistake
The electric current of warm protection location is stablized.In present pre-ferred embodiments, buffering capacitor cell 14 includes delay cell and capacitance list
Member.
The another way of reference voltage is output to an input terminal of comparing unit 18, and the other end of comparing unit 8 connects
Negative temperature coefficient voltage generating unit 17, comparing unit 18 mainly includes the 14th field-effect tube M14 here and the 15th imitates
Should pipe M15, reference voltage flowed into after the 14th field-effect tube M14 source electrodes the 17th field-effect tube M17 drain and gate and
The grid of 18th field-effect tube M18, and the source electrode of the 17th field-effect tube M17 is grounded, and negative temperature coefficient voltage produces
The voltage signal of unit 17 is connected to the grid of the 15th field-effect tube M15.And the source electrode of the 15th field-effect tube M15 is connected to
The drain electrode of 11st field-effect tube M11, drain electrode are connected with the drain electrode of the 18th field-effect tube M18.17th field-effect tube M17's
The source electrode of source electrode and the 18th field-effect tube M18 are grounded.The drain electrode of 15th field-effect tube M15 and the 18th field-effect tube M18
Drain electrode between separate a branch be connected respectively to the grid of the 19th field-effect tube M19 and the grid of the 9th field-effect tube M9 with
And the 20th field-effect tube M20 grid.The drain electrode connection OTR ends of 20th field-effect tube M20, source electrode ground connection, OTR here
End is used as output linear current, with the size of current of LED drive circuit for adjusting.The drain electrode of 19th field-effect tube M19 is connected to
The drain electrode of 12nd field-effect tube M12, source electrode ground connection.The grid of 12nd field-effect tube M12 is connected to bias voltage VPB1, source
Pole connects drain electrode and source electrode and the power supply VCC of the tenth field-effect tube M10 respectively, and the grid of the tenth field-effect tube M10 is connected to
Bias voltage VPB1.The source electrode connection power supply VCC of 13rd field-effect tube M13, grid connection bias voltage VPB1, drain electrode connection
The drain electrode of 16th field-effect tube M16.The grid of 16th field-effect tube M16 connects the drain electrode of the 12nd field-effect tube M12, leakage
Pole is connected to the 21st field-effect tube M21 source electrodes.The grid of 21st field-effect tube M21 is connected to the 13rd field-effect tube
The drain electrode of M13, drain electrode are connected to the source electrode of the 23rd field-effect tube M23.The grid of 23rd field-effect tube M23 is connected to
The drain electrode of 13rd field-effect tube M13, drain electrode are connected to the grid and the 25th field-effect tube of the 24th field-effect tube M24
The grid of M25.The source electrode of 22nd field-effect tube M22 is connected to power supply VCC, and grid is connected to the 13rd field-effect tube M13
Drain electrode, drain electrode be connected to the 24th field-effect tube M24 grid and the 25th field-effect tube M25 grid.20th
The source electrode of four field-effect tube M24 is connected to power supply VCC, drains and is connected to the drain electrode of the 25th field-effect tube M25, and the 25th
The source electrode of field-effect tube M25 is connected to the leakage of the 21st field-effect tube M21 together with the source electrode of the 23rd field-effect tube M23
Pole.The drain electrode of 24th field-effect tube M24 and the drain electrode of the 25th field-effect tube M25 are connected to OTP-H ends, and (i.e. excess temperature is protected
Protect the high level output end of unit).When OTP-H ends export high level, then LED drive circuit is closed, to prevent LED from driving core
Piece is burnt because working on overheat.
In above-mentioned over-temperature protection unit, the comparing unit includes：14th field-effect tube M14, the 15th field-effect tube
M15 and the 17th field-effect tube M17 and the 18th field-effect tube M18, wherein, the grid of the 14th field-effect tube M14
The reference voltage is inputted, the source electrode of the 14th field-effect tube M14 is connected to power supply, the 14th field-effect tube M14
Drain electrode be connected to grid and the drain electrode of the 17th field-effect tube M17, and the grid of the 18th field-effect tube M18
Pole, the grid of the 15th field-effect tube M15 input the negative temperature coefficient voltage, and source electrode is connected to the power supply, drains
It is connected to the drain electrode of the 18th field-effect tube M18.The source electrode of the 17th field-effect tube M17 and described 18th effect
Should pipe M18 source electrode ground connection.
The switch control unit includes：16th field-effect tube M16, the 21st field-effect tube M21, the 22nd
Effect pipe M22, the 23rd field-effect tube M23, the 24th field-effect tube M24 and the 25th field-effect tube M25, wherein,
The grid of the 16th field-effect tube M16 is subject to the output signal of the comparing unit to control, the 16th field-effect tube
The source electrode of M16 is connected with the source electrode of the 21st field-effect tube M21 and drain electrode, the leakage of the 16th field-effect tube M16
Pole connects the grid of the 21st field-effect tube M21, the grid of the 22nd field-effect tube M22 and described respectively
The grid of 23rd field-effect tube M23；The source electrode connection power supply of the 22nd field-effect tube M22, described second
The drain electrode of 12 field-effect tube M22 connects the draining of the grid of the 23rd field-effect tube M23, the described 24th respectively
The grid of the grid of field-effect tube M24 and the 25th field-effect tube M25；The source of the 23rd field-effect tube M23
Pole connects the drain electrode of the source electrode and the 21st field-effect tube M21 of the 25th field-effect tube M25 respectively；Described
The drain electrode of 24 field-effect tube M24 is connected with the drain electrode of the 25th field-effect tube M25, and exports switch control letter
Number.
The buffering capacitor cell includes：Delay cell and capacitor cell, the delay cell are used in LED drive chip
When temperature raises suddenly, the time that the switch control unit performs shutoff operation is postponed；The capacitor cell is used to filter out miscellaneous
Ripple, stablizes the electric current of the over-temperature protection unit.
The linear current output adjustment unit includes the 20th field-effect tube M20, the 20th field-effect tube M20's
Source electrode is grounded, and grid is connected to the output terminal of the comparing unit, drain electrode output linear current.
The excess temperature that LED drive chip can be achieved by the connection between simple multiple field-effect tube by the present invention is adjusted,
It is simple in structure, it is of low cost.
Fig. 8 and Fig. 9 are referred to, Fig. 8 is the structure diagram of the negative-feedback amplifier unit shown in Fig. 1；Fig. 9 is shown in Fig. 8
The electrical block diagram of negative-feedback amplifier unit.As shown in Figure 8 and Figure 9, which includes：Reference voltage end
VREF1 and chip selection signal end CS_R and output terminal GATE, meanwhile, which also has power supply VCC, ground connection
GND, anti-overshoot signal end ST1, overheat protector end OTP_H (high level is effective) and the first bias voltage VPB1.Output terminal
GATE is connected to the 91st field-effect tube M91 grids, the electric current of output after the 91st field-effect tube M91 is amplified extremely
Drain D 1 exports, and the source electrode CS of the 91st field-effect tube M91 is connected to chip selection signal end CS_R by resistance.
Further, in the physical circuit embodiment shown in Fig. 9, which mainly includes：Negative-feedback
Amplifier module and anti-die block excessively, the negative-feedback amplifier module ensures the voltage stabilization of the LED drive chip output, described
Anti- die block of crossing is used to prevent that instantaneous voltage is excessive and burns the LED drive chip.The specific electricity of the negative-feedback amplifier module
Lu Wei:From power supply VCC inflow currents to the 70th field-effect tube M70 and the 71st field-effect tube M71, the 70th field-effect tube
The source electrode of the source electrode of M70 and the 71st field-effect tube M71 are connected, and the first bias voltage VPB1 is connected to the 70th field-effect tube
The grid of the grid of M70 and the 71st field-effect tube M71, the drain electrode of the 70th field-effect tube M70 are connected to the 73rd
The source electrode of effect pipe M73 and the source electrode of the 72nd field-effect tube M72.The 72nd field-effect tube of reference voltage end VREF connections
The grid of the grid of M72 and the 74th field-effect tube M74, the source electrode of the 74th field-effect tube M74 is connected with drain electrode to be followed by
Ground.The grid of the 75th field-effect tube M75 of drain electrode connection of 73rd field-effect tube M73 and drain electrode and the 76th
The grid of effect pipe M76, the source electrode of the 75th field-effect tube M75 and the source electrode of the 76th field-effect tube M76, which are connected, to be followed by
Ground.The drain electrode of 72nd field-effect tube M72 is connected to source electrode and the drain electrode of the 77th field-effect tube M77, and the 77th
The source electrode of field-effect tube M77 is connected with drain electrode, and the grid of the 77th field-effect tube M77 connects after the 35th resistance R35
It is connected to the drain electrode of the 71st field-effect tube M71 and the drain electrode of the 78th field-effect tube M78.78th field-effect tube M78
Source electrode ground connection, grid connect the 77th field-effect tube M77 drain electrode.The drain electrode of 71st field-effect tube M71 is also with bearing
The output terminal GATE of feedback amplifier unit is connected, and the output terminal GATE of negative-feedback amplifier unit is also respectively connected with the 79th
The drain electrode of effect pipe M79 and the drain electrode of the 81st field-effect tube M81.The grid of 79th field-effect tube M79 was connected to
Temperature protection circuit, source electrode ground connection.The source electrode connection power supply VCC of 81st field-effect tube M81, grid connect anti-overshoot signal end
ST1, the drain electrode of the grid and the 83rd field-effect tube M83 of the 82nd field-effect tube M82 of drain electrode connection, the 82nd effect
Should pipe M82 source electrode and drain electrode connection after be grounded through resistance R36, and the grid and the 82nd of the 83rd field-effect tube M83
The source electrode of field-effect tube M82 is connected, the source electrode ground connection of the 83rd field-effect tube M83.Wherein, the 81st field-effect tube M81,
82nd field-effect tube M82, the 83rd field-effect tube M83 and resistance R36 form the anti-of the present invention and cross die block.
The negative-feedback amplifier unit of the present invention has beneficial effect simple in structure, of low cost.
The foregoing is merely embodiments of the present invention, are not intended to limit the scope of the invention, every to utilize this
The equivalent structure or equivalent flow shift that description of the invention and accompanying drawing content are made, it is relevant to be directly or indirectly used in other
Technical field, is included within the scope of the present invention.
Claims (8)
- A kind of 1. LED drive chip, for driving LED light source, it is characterised in that including:Supply unit, overheat protector point are adjusted Unit and over-temperature protection unit and negative-feedback amplifier unit, the supply unit provide stabilization for the LED drive chip Power supply, the overheat protector point adjustment unit are used for the overheat protector point for adjusting the LED drive chip, the overheat protector list Member is used for according to the overheat protector point, carries out overheat protector to the LED drive chip, the negative-feedback amplifier unit is used for The LED drive chip exports constant electric current and drives the LED light source, wherein, the over-temperature protection unit, including：Benchmark Electric current input unit, resistance adjustment unit, comparing unit, negative temperature coefficient voltage generating unit and linear current output are adjusted Unit, the reference current input unit produce an adjustable reference voltage of size with the resistance adjustment unit；It is described Negative temperature coefficient voltage generating unit produces the negative temperature coefficient of a size reduction with the temperature rise of the LED drive chip Voltage；The comparing unit is used for the size of the negative temperature coefficient voltage and the reference voltage to control the subzero temperature Spend the output of coefficient voltages；Voltage of the linear current output adjustment unit according to the negative temperature coefficient voltage generating unit Change, adjusts exported linear current size to control the operating current of the LED drive chip；The over-temperature protection unit Further include：Switch control unit, buffering capacitor cell, bias current generation unit, the switch control unit are used for according to institute The comparing unit negative temperature coefficient voltage and the comparison signal after the reference voltage are stated, is turned on and off the LED Driving chip；The buffering capacitor cell, described buffering capacitor cell one end is connected to the input terminal of the comparing unit, another End is connected to the output terminal of the comparing unit；The bias current generation unit, for being provided for the over-temperature protection unit Bias current；The buffering capacitor cell includes：Delay cell and capacitor cell, the delay cell are used to drive core in LED When piece temperature raises suddenly, the time that the switch control unit performs shutoff operation is postponed；The capacitor cell is used to filter out Clutter, stablizes the electric current of the over-temperature protection unit.
- 2. LED drive chip as claimed in claim 1, it is characterised in that the LED drive chip further includes：Invariable power list Member, for ensureing the LED drive chip in operated at constant power.
- 3. LED drive chip as claimed in claim 1, it is characterised in that the supply unit includes：Power supply unit, biasing Voltage cell and band-gap reference power supply unit, the power supply unit are the bias voltage units and the band-gap reference power supply list Member power supply；The bias voltage units are the overheat protector point adjustment unit and over-temperature protection unit and negative-feedback amplifier list Member provides the bias voltage needed for work；The band-gap reference power supply unit is used for the overheat protector point adjustment unit and mistake Warm protection location and negative-feedback amplifier unit provide benchmark job voltage.
- 4. LED drive chip as claimed in claim 1, it is characterised in that the negative-feedback amplifier unit includes：Negative-feedback is transported Amplification module and anti-die block excessively, the negative-feedback amplifier module ensures the voltage stabilization of the LED drive chip output, described anti- Die block is crossed to be used to prevent that instantaneous voltage is excessive and burns the LED drive chip.
- 5. LED drive chip as claimed in claim 4, it is characterised in that the circuit of the negative-feedback amplifier module is specially： From power supply inflow current to the 70th field-effect tube and the 71st field-effect tube, the source electrode of the 70th field-effect tube and The source electrode of 71 field-effect tube is connected, one first bias voltage be connected to the 70th field-effect tube grid and the 71st The grid of effect pipe, the drain electrode of the 70th field-effect tube are connected to source electrode and the 72nd field-effect of the 73rd field-effect tube The source electrode of pipe；The grid of one reference voltage end the 72nd field-effect tube of connection and the grid of the 74th field-effect tube, the 7th The source electrode of 14 field-effect tube is grounded after being connected with drain electrode；The drain electrode of 73rd field-effect tube connects the 75th field-effect tube Grid and the grid of drain electrode and the 76th field-effect tube, the source electrode of the 75th field-effect tube and the 76th field-effect The source electrode of pipe is grounded after being connected；The drain electrode of 72nd field-effect tube is connected to source electrode and the drain electrode of the 77th field-effect tube, And the 77th the source electrode of field-effect tube be connected with drain electrode, the grid of the 77th field-effect tube connects after the 35th resistance It is connected to the drain electrode of the 71st field-effect tube and the drain electrode of the 78th field-effect tube；The source electrode of 78th field-effect tube connects Ground, and grid connects the drain electrode of the 77th field-effect tube；The drain electrode of 71st field-effect tube and the 79th field-effect tube Drain electrode be connected with the output terminal of negative-feedback amplifier unit.
- 6. LED drive chip as claimed in claim 1, it is characterised in that the overheat protector point adjustment unit includes：Amplifier Module, current mirror module, Current amplifier module, variable resistance unit, the amplifier module are used to provide band load voltage, ensure Multiple loads provide stable voltage when loading larger, and the electric current that the current mirror module exports the amplifier module carries For an image current, the Current amplifier module is used to the image current being amplified by preset multiple, described variable Resistance unit is used to set overheat protector point size.
- 7. LED drive chip as claimed in claim 6, it is characterised in that the current mirror module includes：30th field-effect Pipe and the 31st field-effect tube, wherein, the source electrode of the 30th field-effect tube and the source electrode of the 31st field-effect tube with Power supply is connected, the grid of the 30th field-effect tube, the grid of drain electrode and the 31st field-effect tube and the Current amplifier Module is connected, the drain electrode output overheat protector electric current of the 31st field-effect tube.
- 8. a kind of LED photovoltaic module, the LED photovoltaic module includes substrate, and the LED light source and LED on the substrate drive Dynamic circuit, the LED drive circuit include LED drive chip, it is characterised in that the LED drive chip is such as claim 1 To 7 any one of them LED drive chips.
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|---|---|---|---|---|
| CN204377193U (en) * | 2014-12-31 | 2015-06-03 | 深圳市明微电子股份有限公司 | Constant current driver circuit for LED and Switching Power Supply driving chip thereof |
| CN205430665U (en) * | 2015-12-11 | 2016-08-03 | 古道雄 | LED photovoltaic module and driver chip thereof |
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| CN204377193U (en) * | 2014-12-31 | 2015-06-03 | 深圳市明微电子股份有限公司 | Constant current driver circuit for LED and Switching Power Supply driving chip thereof |
| CN205430665U (en) * | 2015-12-11 | 2016-08-03 | 古道雄 | LED photovoltaic module and driver chip thereof |
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| 一种带过温保护和折返电流限的LDO 设计;刘明亮等;《微电子学》;20110630;第41卷(第3期);第411-415页 * |
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