CN105636264A - LED photoelectric module and driving chip therefor - Google Patents
LED photoelectric module and driving chip therefor Download PDFInfo
- Publication number
- CN105636264A CN105636264A CN201510923728.6A CN201510923728A CN105636264A CN 105636264 A CN105636264 A CN 105636264A CN 201510923728 A CN201510923728 A CN 201510923728A CN 105636264 A CN105636264 A CN 105636264A
- Authority
- CN
- China
- Prior art keywords
- field effect
- effect transistor
- unit
- led drive
- drive chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000001105 regulatory effect Effects 0.000 claims abstract description 9
- 230000005669 field effect Effects 0.000 claims description 267
- 230000001012 protector Effects 0.000 claims description 44
- 239000003990 capacitor Substances 0.000 claims description 16
- 230000003139 buffering effect Effects 0.000 claims description 10
- 230000006641 stabilisation Effects 0.000 claims description 6
- 238000011105 stabilization Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 8
- 238000005286 illumination Methods 0.000 description 5
- 238000010276 construction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/40—Details of LED load circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/50—Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDs; responsive to LED life; Protective circuits
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
Landscapes
- Led Devices (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses an LED photoelectric module and a driving chip therefor. The LED driving chip is used for driving an LED light source; the LED driving chip comprises a power supply apparatus, an over-temperature protection point regulation unit, an over-temperature protection unit and a negative feedback operational amplifier unit, wherein the power supply apparatus provides stable power supply to the LED driving chip; the over-temperature protection point regulation unit is used for regulating the over-temperature protection point of the LED driving chip; the over-temperature protection unit is used for performing over-temperature protection on the LED driving chip according to the over-temperature protection point; and the negative feedback operational amplifier unit is used for enabling the LED driving chip to output constant current to drive the LED light source. The LED photoelectric module and the driving chip therefor provided by the invention have the beneficial effects of capabilities of preventing the LED driving chip from being burnt down due to an over-high temperature and prolonging the service life of the LED light source apparatus effectively, and low cost.
Description
Technical field
The present invention relates to the actuation techniques field of LED light source, particularly relate to a kind of LED photovoltaic module and LED drive chip thereof.
Background technology
LED light source, because of the advantage such as have that environmental protection, long service life, energy-conservation, stable performance, light efficiency be high and volume is little, has been widely used to various lighting fields, at present such as room lighting, automobile, consumption electronic products.
At present, along with developing rapidly of LED technology, LED light source has been widely applied on high-power illumination equipment. And current high-power illumination needs LED number more, have up to up to a hundred. Recently a kind of LED photovoltaic module is widely used, and this LED photovoltaic module includes substrate and the LED drive circuit arranged on the substrate and LED, and this LED drive circuit includes LED drive chip and other necessary component. This LED photovoltaic module both can be independently used for illumination, it is possible to is installed on the base of LED illumination device, assembles with lampshade etc., it is not necessary to the too much circuit design etc. considering LED, production and assembly are convenient. Accounting for larger proportion yet with heat in LED light source, when the LED drive chip working time is long, can be in overheated or that temperature is too high state, severe patient burns out LED drive chip, substantially reduces the service life of LED illumination device.
Therefore, it is necessary to propose a kind of new scheme, solve the problems referred to above.
Summary of the invention
The present invention is based on above one or more problem, it is provided that a kind of LED drive chip and excess temperature thereof regulate circuit, and in order to solve, LED drive chip temperature in prior art is too high causes that LED drive chip is burnt, the problem affecting LED light source service life.
The present invention provides a kind of LED drive chip, for driving LED light source, including: supply unit, overheat protector point regulon and over-temperature protection unit and negative feedback amplifier unit, described supply unit provides stable power supply for described LED drive chip, described overheat protector point regulon is for regulating the overheat protector point of described LED drive chip, described over-temperature protection unit is for according to described overheat protector point, described LED drive chip is carried out overheat protector, described negative feedback amplifier unit drives described LED light source for the electric current that the output of described LED drive chip is constant.
It is preferred that described LED drive chip also includes: invariable power unit, it is used for ensureing that described LED drive chip is at operated at constant power.
It is preferred that described supply unit includes: power subsystem, bias voltage units and band-gap reference power subsystem, described power subsystem is described bias voltage units and described band-gap reference power subsystem is powered; Described bias voltage units is the bias voltage needed for described overheat protector point regulon and over-temperature protection unit and negative feedback amplifier unit offer work; Described bandgap voltage reference unit is for providing benchmark job voltage to described overheat protector point regulon and over-temperature protection unit and negative feedback amplifier unit.
Preferably, described over-temperature protection unit, including: reference current input block, resistance adjustment unit, comparing unit, negative temperature coefficient voltage generating unit and linear current output regulon, described reference current input block produces an adjustable reference voltage of size with described resistance adjustment unit; Described negative temperature coefficient voltage generating unit raises with the temperature of described LED drive chip and produces the negative temperature coefficient voltage that a size reduces; Described comparing unit is for comparing the described negative temperature coefficient voltage size with described reference voltage to control the output of described negative temperature coefficient voltage; Described linear current output regulon, according to the change in voltage of described negative temperature coefficient voltage generating unit, regulates the linear current size exported to control the operating current of described LED drive chip.
It is preferred that described over-temperature protection unit also includes: switch control unit, described switch control unit is for according to the comparison signal after described comparing unit more described negative temperature coefficient voltage and described reference voltage, being turned on and off described LED drive chip; Buffering capacitor cell, described buffering capacitor cell one end is connected to the input of described comparing unit, and the other end is connected to the outfan of described comparing unit; Bias current generation unit, provides bias current for regulating circuit for described excess temperature.
Preferably, described negative feedback amplifier unit includes: negative feedback amplifier module and anti-die block excessively, described negative feedback amplifier module ensures the voltage stabilization of described LED drive chip output, and described anti-die block of crossing is used for preventing instantaneous voltage excessive and burning described LED drive chip.
Preferably, the circuit of described negative feedback amplifier module is particularly as follows: from power supply inflow current to the 70th field effect transistor and the 71st field effect transistor, the source electrode of described 70th field effect transistor and the source electrode of the 71st field effect transistor are connected, one first bias voltage is connected to the grid of the 70th field effect transistor and the grid of the 71st field effect transistor, and the drain electrode of the 70th field effect transistor is connected to the source electrode of the 73rd field effect transistor and the source electrode of the 72nd field effect transistor; One reference voltage end connects the grid of the 72nd field effect transistor and the grid of the 74th field effect transistor, the source electrode of the 74th field effect transistor and the rear ground connection that is connected that drains; The drain electrode of the 73rd field effect transistor connects the grid of the 75th field effect transistor and the connected rear ground connection of the grid of drain electrode and the 76th field effect transistor, the source electrode of the 75th field effect transistor and the source electrode of the 76th field effect transistor; The drain electrode of the 72nd field effect transistor is connected to source electrode and the drain electrode of the 77th field effect transistor, and the 77th the source electrode of field effect transistor be connected with drain electrode, the grid of the 77th field effect transistor is connected to the drain electrode of the 71st field effect transistor and the drain electrode of the 78th field effect transistor after the 35th resistance; The source ground of the 78th field effect transistor, and the drain electrode of grid connection the 77th field effect transistor; The drain electrode of the 71st field effect transistor is connected with the outfan of negative feedback amplifier unit with the drain electrode of the 79th field effect transistor.
Preferably; described overheat protector point regulon includes: amplifier module, current mirror module, Current amplifier module, variable resistance unit; described amplifier module is used for providing band load voltage; ensure to provide stable voltage when multiple loads or load are bigger; the electric current that described amplifier module is exported by described current mirror module provides an image current; described Current amplifier module is for being amplified described image current by preset multiple, and described variable resistance unit is used for arranging overheat protector point size.
Preferably; described current mirror module includes: the 30th field effect transistor and the 31st field effect transistor; wherein; the described source electrode of the 30th field effect transistor and the source electrode of the 31st field effect transistor are connected with power supply; the grid of described 30th field effect transistor, drain electrode are connected with described Current amplifier module with the grid of the 31st field effect transistor, the drain electrode output overheat protector electric current of described 31st field effect transistor.
The present invention also provides for a kind of LED photovoltaic module, described LED photovoltaic module includes substrate, is located at the LED light source on described substrate and LED drive circuit, and described LED drive circuit includes LED drive chip, wherein, described LED drive chip is the LED drive chip as described in front any one.
The LED photovoltaic module of the present invention and driving chip thereof have and prevent what LED drive chip from causing because temperature is too high to burn, and effectively extend the service life of LED light source device and beneficial effect with low cost.
Accompanying drawing explanation
Fig. 1 is the structural representation of the LED drive chip of the LED photovoltaic module of present pre-ferred embodiments.
Fig. 2 is the structural representation of the supply unit shown in Fig. 1.
Fig. 3 is the electrical block diagram of the power subsystem in Fig. 2.
Fig. 4 is the structural representation of the overheat protector point regulon shown in Fig. 1.
Fig. 5 is the electrical block diagram of the overheat protector point regulon shown in Fig. 4.
Fig. 6 is the structural representation of the over-temperature protection unit shown in Fig. 1.
Fig. 7 is the electrical block diagram of the over-temperature protection unit shown in Fig. 6.
Fig. 8 is the structural representation of the negative feedback amplifier unit shown in Fig. 1.
Fig. 9 is the electrical block diagram of the unit of negative feedback amplifier shown in Fig. 8.
Detailed description of the invention
Below in conjunction with drawings and Examples, the present invention is described in detail. If it should be noted that do not conflict, the embodiment of the present invention and each feature in embodiment can be combined with each other, all within protection scope of the present invention.
Embodiment 1
Refer to the structural representation of LED drive chip that Fig. 1, Fig. 1 are the LED photovoltaic modules of present pre-ferred embodiments. as it is shown in figure 1, the LED photovoltaic module of the present invention belongs to an important component part of LED light source device, LED light source device also includes base and lampshade etc. on the basis of this LED light source module. this LED light source module includes LED drive chip, it is used for driving LED light source, specifically include that supply unit 21, overheat protector point regulon 24 and over-temperature protection unit 23 and negative feedback amplifier unit 25, described supply unit 21 provides stable power supply for described LED drive chip, described overheat protector point regulon 24 is for regulating the overheat protector point of described LED drive chip, described over-temperature protection unit 23 is for according to described overheat protector point, described LED drive chip is carried out overheat protector, described negative feedback amplifier unit 25 drives described LED light source for the electric current that the output of described LED drive chip is constant.
The present invention is by arranging overheat protector point regulon 24 and over-temperature protection unit 23 and negative feedback amplifier unit 25; make LED drive chip will not cause that LED drive chip is burnt because temperature is too high; effectively extend the service life of LED light source device and simple in construction, with low cost.
Further, described LED drive chip also includes: invariable power unit 22, is used for ensureing that described LED drive chip is at operated at constant power. By arranging invariable power unit 22, the present invention can ensure that LED drive chip is in operated at constant power well, reduces circuit because voltage or electric current sharply changes thus the power caused increases suddenly or reduces, the problem affecting LED light source service life.
Refer to the structural representation that Fig. 2, Fig. 2 are the supply units shown in Fig. 1. As shown in Figure 2, in a specific embodiment, described supply unit 21 includes: power subsystem 212, bias voltage units 211 and band-gap reference power subsystem 213, and described power subsystem 212 is powered for described bias voltage units 211 and described band-gap reference power subsystem 213; Described bias voltage units 211 provides the bias voltage needed for work for described overheat protector point regulon 24 and over-temperature protection unit 23 and negative feedback amplifier unit 25; Described bandgap voltage reference unit 213 is for providing benchmark job voltage to described overheat protector point regulon 24 and over-temperature protection unit 23 and negative feedback amplifier unit 25.
Refer to the electrical block diagram that Fig. 3, Fig. 3 are the power subsystems in Fig. 2. As shown in Figure 3; the circuit of power subsystem is as follows: supply voltage D1 flows into the drain electrode of high voltage bearing J type-field effect transistor M44, and the source electrode of J type-field effect transistor M44 is connected respectively to one end of the drain electrode of the field effect transistor M45 as electrostatic protection, the colelctor electrode of the first power transistor Q3 and source resistance R5. The grid of J type-field effect transistor M44 is connected respectively to the other end of the colelctor electrode of second source transistor Q2 and base stage, the base stage of the first power transistor Q3 and source resistance R5. The emitter stage of second source transistor Q2 connects earth terminal GND after connecting Zener diode D1. The emitter stage output supply voltage VCC of the first power transistor Q3. Ground connection after being connected with grid as the source electrode of field effect transistor M45 of electrostatic protection.
Referring to the structural representation that Fig. 4 and Fig. 5, Fig. 4 are the overheat protector point regulons shown in Fig. 1, Fig. 5 is the electrical block diagram of the overheat protector point regulon shown in Fig. 4. As shown in Figure 4 and Figure 5; overheat protector point regulon 24 includes amplifier module 241, current mirror module 242, Current amplifier module 243, variable resistance unit 245; amplifier module 241 provides band load voltage; ensure to provide stable voltage when multiple loads or load are bigger; the electric current that amplifier module 241 is exported by current mirror module 242 provides an image current, and this image current can according to being necessarily drawn to setting. Image current is amplified by Current amplifier module 243 by preset multiple, and variable resistance unit 245 is used for arranging overheat protector point, and as resistance becomes big, overheat protector point is more high, also just says that LED drive chip is operated in higher temperature range. By arranging overheat protector point, it is possible to according to the practical situation of LED light source, control over-temperature protection unit and open overheat protector in good time.
Further, overheat protector point regulon 24 also includes zero compensation capacitance module 246, and this zero compensation capacitance module 246 is used in feedback circuit, when phase field degree is inadequate, it is prevented that circuit self-excitation.
Further, overheat protector point regulon 24 also includes anti-static module 244, is used for preventing circuit from producing static damage.
Referring to Fig. 5, the circuit structure of this overheat protector point regulon 24 is specific as follows:
Amplifier module 241 includes amplifier input submodule, amplifier output sub-module, amplifier adjustment resistance. specifically, input in submodule in amplifier, first bias voltage of bias voltage units 211 provides the grid of end VPB1 and the 26 field effect transistor M26, the grid of the 27th field effect transistor M27 connects, the source electrode of the 26th field effect transistor M26 is connected with power supply VCC, the drain electrode of the 26th field effect transistor M26 is connected with the drain electrode of the 39th field effect transistor M39, the grid of the 39th field effect transistor M39 provides end VPB2 to be connected with the second bias voltage of bias voltage units 211, the source electrode of the 39th field effect transistor M39 and the drain electrode of the 43rd field effect transistor M43 connect, the grid of the 43rd field effect transistor M43 connects the drain electrode of the 39th field effect transistor M39, the source electrode of the 43rd field effect transistor M43 and the source electrode of the 41st field effect transistor M41, the source electrode of the 42nd field effect transistor M42 connects. the source electrode of the 27th field effect transistor M27 connects the drain electrode of power supply VCC, the 27th field effect transistor M27 and connects the source electrode of the 34th field effect transistor M34 and the source electrode of the 35th field effect transistor M35. the grid of the 34th field effect transistor M34 is connected with the outfan Vbg of band-gap reference power subsystem 213, the drain electrode of the 34th field effect transistor M34 connects the drain electrode of the 41st field effect transistor M41 and the source electrode of the 36th field effect transistor M36, the grid of the 36th field effect transistor M36 and the second bias voltage provide end VPB2 to be connected, and the grid of the 41st field effect transistor M41 is connected to the drain electrode of the 39th field effect transistor M39. the drain electrode of the 35th field effect transistor M35 connects the source electrode of the 37th field effect transistor M37 and the drain electrode of the 42nd field effect transistor. in amplifier output sub-module, power supply VCC inputs the source electrode of the 28th field effect transistor M28 and the source electrode of the 29th field effect transistor M29, and the grid of the grid of the 28th field effect transistor M28 and the 29th field effect transistor M29 is connected to the drain electrode that amplifier inputs the 36th field effect transistor M36 of submodule, the drain electrode of the 28th field effect transistor M28 is connected with the source electrode of the 32nd field effect transistor M32, and the drain electrode of the 29th field effect transistor M29 is connected with the source electrode of the 33rd field effect transistor M33. the drain electrode of the 32nd field effect transistor M32 is connected to the drain electrode of the 36th field effect transistor M36 of amplifier input submodule, and the drain electrode of the 33rd field effect transistor M33 is connected to the drain electrode of the 37th field effect transistor M37 of amplifier input submodule. the source electrode of the 37th field effect transistor M37 and the drain electrode of the 42nd field effect transistor M42 are connected.
Minimum capacity compensating module 246 includes the grid of the 40th field effect transistor M40 and is connected to the drain electrode of the 37th field effect transistor M37 of amplifier module 241 and the grid of the 38th field effect transistor M38, and the source electrode of the 40th field effect transistor M40 and drain electrode are connected ground connection afterwards.
Current mirror module 242 includes: the 30th field effect transistor M30 and the 31 field effect transistor M31. Wherein, the source electrode of the 30th field effect transistor M30 and the source electrode of the 31st field effect transistor M31 are connected with power supply VCC; the grid of the grid of the 30th field effect transistor M30, drain electrode and the 31st field effect transistor M31 is connected with the drain electrode of the 38th field effect transistor M38 of Current amplifier module 243, the drain electrode output overheat protector electric current IOUT-RTH of the 31st field effect transistor M31.
Current amplifier module 243 includes: the 38th field effect transistor M38, the drain electrode of the 38th field effect transistor M38 connects the outfan of current mirror module 242, grid connects the drain electrode of the 37th field effect transistor M37 of amplifier module 241, and source electrode connects variable resistance unit 245.
Variable resistance unit 245 includes: at least one variable resistance RTH, by changing the resistance of variable resistance RTH, regulates overheat protector point, thus protecting LED drive chip to be operated in suitable temperature range. Further, series resistance R8 and resistance R9 is also included.
Anti-static module 244 includes resistance R7.
Equal with the voltage of power subsystem 212 for the voltage making band-gap reference power subsystem 213 with the adjustment resistance R6 of resistance R7 series connection, i.e. Vbg=VCC.
Refer to the structural representation that Fig. 6 and Fig. 7, Fig. 6 are the over-temperature protection unit shown in Fig. 1; Fig. 7 is the electrical block diagram of the over-temperature protection unit shown in Fig. 6. As shown in Figure 6 and Figure 7, the over-temperature protection unit (or excess temperature adjustment circuit) of the LED drive chip of presently preferred embodiments of the present invention, for regulating temperature during LED drive chip work. This over-temperature protection unit includes: reference current input block 11, resistance adjustment unit 12, comparing unit 18, negative temperature coefficient voltage generating unit 17 and linear current output regulon 16; described reference current input block 11 produces an adjustable reference voltage of size with described resistance adjustment unit 12; wherein; resistance adjustment unit 12 is according to variations in temperature; adjusting resistance value size; or according to being actually needed, resistance is adjusted, so can change the size of reference voltage. Described negative temperature coefficient voltage generating unit 17 raises with the temperature of described LED drive chip and produces the negative temperature coefficient voltage that a size reduces. Wherein, negative temperature coefficient voltage refers to that the change of voltage and LED drive chip variations in temperature are negative correlation, and along with the rising of temperature, the magnitude of voltage that negative temperature coefficient voltage generating unit 17 produces reduces. Described comparing unit 18 is for comparing the described negative temperature coefficient voltage size with described reference voltage to control the output of described negative temperature coefficient voltage. Described linear current output regulon 16, according to the change in voltage of described negative temperature coefficient voltage generating unit 17, regulates the linear current size exported to control the operating current of described LED drive chip.
The present invention is by above-mentioned structural design; it is possible not only to regulate reference voltage size and changes overheat protector point flexibly; simple comparing unit is utilized to control to realize voltage output; both circuit structure had been simplified; reduce cost; prevent again LED drive chip from causing that LED drive chip is burnt because temperature is too high, thus extending the service life of LED light source device.
Further; described over-temperature protection unit also includes: switch control unit 15; described switch control unit 15 is for according to the comparison signal after described comparing unit 18 relatively described negative temperature coefficient voltage and described reference voltage, being turned on and off described LED drive chip. Specifically, comparing unit 18 is for the size of relatively described negative temperature coefficient voltage with described reference voltage, when comparing reference voltage described in described negative temperature coefficient voltage ratio and being big, then negative temperature coefficient voltage generating unit 17 continues to put out voltage and exports regulon 16 to described linear current, then linear electric current output regulon 16 provides operating current for LED drive chip, and now switch control unit 15 is in opening; When comparing described negative temperature coefficient voltage equal to or less than described reference voltage, illustrating that the temperature of LED drive chip is too high, have been over the temperature preset, switch control unit 16 closes LED drive chip.
In the embodiment of a deformation; after LED light source device uses the long period, light efficiency is deteriorated, for ensureing luminosity; brightness would generally be improved by increase electric current; so now, the heat that LED drive chip produces raises can be very fast, and this is accomplished by suitably regulating reference voltage by resistance adjustment unit; reference voltage is improved; so that switch control unit 16 carries the previous time and closes LED drive chip, it is prevented that LED drive chip is burned, extend the service life of LED light source device.
Further, described over-temperature protection unit also includes: buffering capacitor cell 14, described buffering capacitor cell 14 one end is connected to the input of described comparing unit 18, and the other end of described buffering capacitor cell 14 is connected to the outfan of described comparing unit 18. This buffering capacitor cell 18, for making output arrive the current stabilization of linear current output regulon 16, filters out clutter, slows down the closedown of LED drive chip, it is to avoid LED light source device is impacted.
Further, described over-temperature protection unit includes: bias current generation unit 13, for providing bias current for described over-temperature protection unit, provides working power for whole over-temperature protection unit.
Referring to Fig. 7, the concrete structure of the over-temperature protection unit of present pre-ferred embodiments is as follows:
From IOTP2 end (over-temperature protection unit input); there is provided a constant bias current to resistance R1, R2, R3, R4 of series connection from IOTP2 end; one end ground connection of resistance R1; wherein resistance R1 is in parallel with temperature spot adjustment resistance IOUTRTH; the resistance of resistance IOUTRTH is regulated by changing this temperature spot; changing the voltage of output between IOTP2 end and resistance R4, this voltage is as the reference voltage of over-temperature protection unit. Wherein, resistance R1, R2, R3 and R4 and this temperature spot regulate the resistance adjustment unit 12 of the resistance IOUTRTH composition present invention. One tunnel of reference voltage exports a delay cell, described delay cell includes the field effect transistor of several series connection, specifically, in the preferred embodiment, for the first field effect transistor M1 of series connection, the second field effect transistor M2, the 3rd field effect transistor M3, the 4th field effect transistor M4, in reality, it is possible to according to needing to arrange the quantity of field effect transistor. This delay cell is for when temperature raises suddenly, postponing switch control unit 15 and perform the time of shutoff operation. This delay cell is connected to capacitor cell, this capacitor cell includes several field effect transistor of parallel connection, specifically, in the preferred embodiment, for the 5th field effect transistor M5 in parallel, the 6th field effect transistor M6, the 7th field effect transistor M7, the 8th field effect transistor M8 and the nine field effect transistor M9, ground connection after the 9th field effect transistor M9. This capacitor cell can filtering clutter, make the current stabilization of described over-temperature protection unit. In present pre-ferred embodiments, buffering capacitor cell 14 includes delay cell and capacitor cell.
Another road of reference voltage exports an input of comparing unit 18, and the other end of comparing unit 8 connects negative temperature coefficient voltage generating unit 17, here comparing unit 18 mainly includes the 14th field effect transistor M14 and the 15 field effect transistor M15, reference voltage flows into the drain and gate of the 17th field effect transistor M17 and the grid of the 18th field effect transistor M18 after the 14th field effect transistor M14 source electrode, and the source ground of the 17th field effect transistor M17, and the voltage signal of negative temperature coefficient voltage generating unit 17 is connected to the grid of the 15th field effect transistor M15. And the source electrode of the 15th field effect transistor M15 is connected to the drain electrode of the 11st field effect transistor M11, drain electrode is connected with the drain electrode of the 18th field effect transistor M18. The source electrode of the 17th field effect transistor M17 and the source ground of the 18th field effect transistor M18. Separate a branch road between drain electrode and the drain electrode of the 18th field effect transistor M18 of the 15th field effect transistor M15 and be connected respectively to the grid of the 19th field effect transistor M19 and the grid of the grid of the 9th field effect transistor M9 and the 20th field effect transistor M20. The drain electrode of the 20th field effect transistor M20 connects OTR end, source ground, and OTR end here is used as output linearity electric current, with the size of current of LED drive circuit for adjusting. The drain electrode of the 19th field effect transistor M19 is connected to the drain electrode of the 12nd field effect transistor M12, source ground. The grid of the 12nd field effect transistor M12 is connected to bias voltage VPB1, and source electrode connects the drain electrode of the tenth field effect transistor M10 and source electrode and power supply VCC respectively, and the grid of the tenth field effect transistor M10 is connected to bias voltage VPB1. The source electrode of the 13rd field effect transistor M13 connects power supply VCC, and grid connects bias voltage VPB1, and drain electrode connects the drain electrode of the 16th field effect transistor M16. The grid of the 16th field effect transistor M16 connects the drain electrode of the 12nd field effect transistor M12, and drain electrode is connected to the 21st field effect transistor M21 source electrode. The grid of the 21st field effect transistor M21 is connected to the drain electrode of the 13rd field effect transistor M13, and drain electrode is connected to the source electrode of the 23rd field effect transistor M23. The grid of the 23rd field effect transistor M23 is connected to the drain electrode of the 13rd field effect transistor M13, and drain electrode is connected to the grid of the 24th field effect transistor M24 and the grid of the 25th field effect transistor M25. The source electrode of the 22nd field effect transistor M22 is connected to power supply VCC, and grid is connected to the drain electrode of the 13rd field effect transistor M13, and drain electrode is connected to the grid of the 24th field effect transistor M24 and the grid of the 25th field effect transistor M25. The source electrode of the 24th field effect transistor M24 is connected to power supply VCC, drain electrode is connected to the drain electrode of the 25th field effect transistor M25, and the source electrode of the 25th field effect transistor M25 and the source electrode of the 23rd field effect transistor M23 are connected to the drain electrode of the 21st field effect transistor M21 together. The drain electrode of the 24th field effect transistor M24 is connected to OTP-H end (i.e. the high level output end of over-temperature protection unit) with the drain electrode of the 25th field effect transistor M25. When OTP-H end exports high level, then close LED drive circuit, to prevent LED drive chip from burning because working on overheated.
In above-mentioned over-temperature protection unit, described comparing unit includes: the 14th field effect transistor M14, 15th field effect transistor M15 and the 17 field effect transistor M17 and the 18th field effect transistor M18, wherein, the grid of described 14th field effect transistor M14 inputs described reference voltage, the source electrode of described 14th field effect transistor M14 is connected to power supply, the drain electrode of described 14th field effect transistor M14 is connected to grid and the drain electrode of described 17th field effect transistor M17, and the grid of described 18th field effect transistor M18, the grid of described 15th field effect transistor M15 inputs described negative temperature coefficient voltage, source electrode is connected to described power supply, drain electrode is connected to the drain electrode of described 18th field effect transistor M18. the source electrode of described 17th field effect transistor M17 and the source ground of described 18th field effect transistor M18.
Described switch control unit includes: the 16th field effect transistor M16, 21st field effect transistor M21, 22nd field effect transistor M22, 23rd field effect transistor M23, 24th field effect transistor M24 and the 25 field effect transistor M25, wherein, the grid of described 16th field effect transistor M16 is subject to the output signal of described comparing unit and controls, the source electrode of described 16th field effect transistor M16 is connected with the source electrode of described 21st field effect transistor M21 and drain electrode, the drain electrode of described 16th field effect transistor M16 connects the grid of described 21st field effect transistor M21 respectively, the grid of described 22nd field effect transistor M22 and the grid of described 23rd field effect transistor M23, the source electrode of described 22nd field effect transistor M22 connects described power supply, and the drain electrode of described 22nd field effect transistor M22 connects the grid of the drain electrode of grid of described 23rd field effect transistor M23, the grid of described 24th field effect transistor M24 and described 25th field effect transistor M25 respectively, the source electrode of described 23rd field effect transistor M23 connects the source electrode of described 25th field effect transistor M25 and the drain electrode of described 21st field effect transistor M21 respectively, the drain electrode of described 24th field effect transistor M24 connects with the drain electrode of described 25th field effect transistor M25, and output switch control signal.
Described buffering capacitor cell includes: delay cell and capacitor cell, and described delay cell is for when LED drive chip temperature raises suddenly, postponing described switch control unit and perform the time of shutoff operation; Described capacitor cell is used for filtering clutter, makes the current stabilization of described over-temperature protection unit.
Described linear current output regulon includes the 20th field effect transistor M20, the source ground of described 20th field effect transistor M20, and grid is connected to the outfan of described comparing unit, and drain output linearity electric current.
The excess temperature that the present invention can realize LED drive chip by the connection between simple multiple field effect transistor regulates, and simple in construction is with low cost.
Refer to the structural representation that Fig. 8 and Fig. 9, Fig. 8 are the negative feedback amplifier unit shown in Fig. 1; Fig. 9 is the electrical block diagram of the unit of negative feedback amplifier shown in Fig. 8. As shown in Figure 8 and Figure 9; this negative feedback amplifier unit includes: reference voltage end VREF1 and chip selection signal end CS_R and outfan GATE; simultaneously; this negative feedback amplifier unit also has power supply VCC; ground connection GND, anti-overshoot signal end ST1, overheat protector end OTP_H (high level is effective) and the first bias voltage VPB1. Outfan GATE is connected to the 91st field effect transistor M91 grid, and the electric current of output exports to drain D 1 after the 91st field effect transistor M91 is amplified, and the source electrode CS of the 91st field effect transistor M91 is connected to chip selection signal end CS_R by resistance.
Further, in the physical circuit embodiment shown in Fig. 9, this negative feedback amplifier unit specifically includes that negative feedback amplifier module and anti-die block excessively, described negative feedback amplifier module ensures the voltage stabilization of described LED drive chip output, and described anti-die block of crossing is used for preventing instantaneous voltage excessive and burning described LED drive chip. The physical circuit of this negative feedback amplifier module is: from power supply VCC inflow current to the 70th field effect transistor M70 and the 71 field effect transistor M71, the source electrode of the 70th field effect transistor M70 and the source electrode of the 71st field effect transistor M71 are connected, first bias voltage VPB1 is connected to the grid of the 70th field effect transistor M70 and the grid of the 71st field effect transistor M71, and the drain electrode of the 70th field effect transistor M70 is connected to the source electrode of the 73rd field effect transistor M73 and the source electrode of the 72nd field effect transistor M72. Reference voltage end VREF connects the grid of the 72nd field effect transistor M72 and the grid of the 74th field effect transistor M74, the source electrode of the 74th field effect transistor M74 and the rear ground connection that is connected that drains. The drain electrode of the 73rd field effect transistor M73 connects the grid of the 75th field effect transistor M75 and the connected rear ground connection of the grid of drain electrode and the 76th field effect transistor M76, the source electrode of the 75th field effect transistor M75 and the source electrode of the 76th field effect transistor M76. The drain electrode of the 72nd field effect transistor M72 is connected to source electrode and the drain electrode of the 77th field effect transistor M77, and the 77th the source electrode of field effect transistor M77 be connected with drain electrode, the grid of the 77th field effect transistor M77 is connected to the drain electrode of the 71st field effect transistor M71 and the drain electrode of the 78th field effect transistor M78 after the 35th resistance R35. The source ground of the 78th field effect transistor M78, grid connects the drain electrode of the 77th field effect transistor M77. The drain electrode of the 71st field effect transistor M71 is also connected with the outfan GATE of negative feedback amplifier unit, and the outfan GATE of negative feedback amplifier unit is also respectively connected with the drain electrode of the 79th field effect transistor M79 and the drain electrode of the 81st field effect transistor M81. The grid of the 79th field effect transistor M79 is connected to thermal-shutdown circuit, source ground. The source electrode of the 81st field effect transistor M81 connects power supply VCC, grid connects anti-overshoot signal end ST1, drain electrode connects the grid of the 82nd field effect transistor M82 and the drain electrode of the 83rd field effect transistor M83, through resistance R36 ground connection after the source electrode of the 82nd field effect transistor M82 and drain electrode connection, and the source electrode of the grid of the 83rd field effect transistor M83 and the 82nd field effect transistor M82 is connected, the source ground of the 83rd field effect transistor M83. Wherein, the 81st field effect transistor M81, the 82nd field effect transistor M82, the 83rd field effect transistor M83 and the anti-of the resistance R36 composition present invention cross die block.
The negative feedback amplifier unit of the present invention has simple in construction, beneficial effect with low cost.
The foregoing is only embodiments of the present invention; not thereby the scope of the claims of the present invention is limited; every equivalent structure utilizing description of the present invention and accompanying drawing content to make or equivalence flow process conversion; or directly or indirectly it is used in other relevant technical fields, all in like manner include in the scope of patent protection of the present invention.
Claims (10)
1. a LED drive chip, for driving LED light source, it is characterized in that, including: supply unit, overheat protector point regulon and over-temperature protection unit and negative feedback amplifier unit, described supply unit provides stable power supply for described LED drive chip, described overheat protector point regulon is for regulating the overheat protector point of described LED drive chip, described over-temperature protection unit is for according to described overheat protector point, described LED drive chip is carried out overheat protector, described negative feedback amplifier unit drives described LED light source for the electric current that the output of described LED drive chip is constant.
2. LED drive chip as claimed in claim 1, it is characterised in that described LED drive chip also includes: invariable power unit, is used for ensureing that described LED drive chip is at operated at constant power.
3. LED drive chip as claimed in claim 1, it is characterised in that described supply unit includes: power subsystem, bias voltage units and band-gap reference power subsystem, described power subsystem is described bias voltage units and described band-gap reference power subsystem is powered; Described bias voltage units is the bias voltage needed for described overheat protector point regulon and over-temperature protection unit and negative feedback amplifier unit offer work; Described bandgap voltage reference unit is for providing benchmark job voltage to described overheat protector point regulon and over-temperature protection unit and negative feedback amplifier unit.
4. LED drive chip as claimed in claim 1, it is characterized in that, described over-temperature protection unit, including: reference current input block, resistance adjustment unit, comparing unit, negative temperature coefficient voltage generating unit and linear current output regulon, described reference current input block produces an adjustable reference voltage of size with described resistance adjustment unit; Described negative temperature coefficient voltage generating unit raises with the temperature of described LED drive chip and produces the negative temperature coefficient voltage that a size reduces; Described comparing unit is for comparing the described negative temperature coefficient voltage size with described reference voltage to control the output of described negative temperature coefficient voltage; Described linear current output regulon, according to the change in voltage of described negative temperature coefficient voltage generating unit, regulates the linear current size exported to control the operating current of described LED drive chip.
5. LED drive chip as claimed in claim 4, it is characterized in that, described over-temperature protection unit also includes: switch control unit, described switch control unit is for according to the comparison signal after described comparing unit more described negative temperature coefficient voltage and described reference voltage, being turned on and off described LED drive chip; Buffering capacitor cell, described buffering capacitor cell one end is connected to the input of described comparing unit, and the other end is connected to the outfan of described comparing unit; Bias current generation unit, provides bias current for regulating circuit for described excess temperature.
6. LED drive chip as claimed in claim 1, it is characterized in that, described negative feedback amplifier unit includes: negative feedback amplifier module and anti-die block excessively, described negative feedback amplifier module ensures the voltage stabilization of described LED drive chip output, and described anti-die block of crossing is used for preventing instantaneous voltage excessive and burning described LED drive chip.
7. LED drive chip as claimed in claim 6, it is characterized in that, the circuit of described negative feedback amplifier module is particularly as follows: from power supply inflow current to the 70th field effect transistor and the 71st field effect transistor, the source electrode of described 70th field effect transistor and the source electrode of the 71st field effect transistor are connected, one first bias voltage is connected to the grid of the 70th field effect transistor and the grid of the 71st field effect transistor, and the drain electrode of the 70th field effect transistor is connected to the source electrode of the 73rd field effect transistor and the source electrode of the 72nd field effect transistor; One reference voltage end connects the grid of the 72nd field effect transistor and the grid of the 74th field effect transistor, the source electrode of the 74th field effect transistor and the rear ground connection that is connected that drains; The drain electrode of the 73rd field effect transistor connects the grid of the 75th field effect transistor and the connected rear ground connection of the grid of drain electrode and the 76th field effect transistor, the source electrode of the 75th field effect transistor and the source electrode of the 76th field effect transistor; The drain electrode of the 72nd field effect transistor is connected to source electrode and the drain electrode of the 77th field effect transistor, and the 77th the source electrode of field effect transistor be connected with drain electrode, the grid of the 77th field effect transistor is connected to the drain electrode of the 71st field effect transistor and the drain electrode of the 78th field effect transistor after the 35th resistance; The source ground of the 78th field effect transistor, and the drain electrode of grid connection the 77th field effect transistor; The drain electrode of the 71st field effect transistor is connected with the outfan of negative feedback amplifier unit with the drain electrode of the 79th field effect transistor.
8. LED drive chip as claimed in claim 1; it is characterized in that; described overheat protector point regulon includes: amplifier module, current mirror module, Current amplifier module, variable resistance unit; described amplifier module is used for providing band load voltage; ensure to provide stable voltage when multiple loads or load are bigger; the electric current that described amplifier module is exported by described current mirror module provides an image current; described Current amplifier module is for being amplified described image current by preset multiple, and described variable resistance unit is used for arranging overheat protector point size.
9. LED drive chip as claimed in claim 8; it is characterized in that; described current mirror module includes: the 30th field effect transistor and the 31st field effect transistor; wherein; the described source electrode of the 30th field effect transistor and the source electrode of the 31st field effect transistor are connected with power supply; the grid of described 30th field effect transistor, drain electrode are connected with described Current amplifier module with the grid of the 31st field effect transistor, the drain electrode output overheat protector electric current of described 31st field effect transistor.
10. a LED photovoltaic module, described LED photovoltaic module includes substrate, is located at the LED light source on described substrate and LED drive circuit, and described LED drive circuit includes LED drive chip, it is characterized in that, described LED drive chip is the LED drive chip as described in any one of claim 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510923728.6A CN105636264B (en) | 2015-12-11 | 2015-12-11 | LED photovoltaic module and its driving chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510923728.6A CN105636264B (en) | 2015-12-11 | 2015-12-11 | LED photovoltaic module and its driving chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105636264A true CN105636264A (en) | 2016-06-01 |
| CN105636264B CN105636264B (en) | 2018-05-04 |
Family
ID=56050595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510923728.6A Active CN105636264B (en) | 2015-12-11 | 2015-12-11 | LED photovoltaic module and its driving chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105636264B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113421529A (en) * | 2021-05-25 | 2021-09-21 | 东风电驱动***有限公司 | Automobile instrument liquid crystal backlight protection circuit and method, automobile instrument and storage medium |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011186178A (en) * | 2010-03-09 | 2011-09-22 | Hitachi Displays Ltd | Liquid crystal display device |
| CN204377193U (en) * | 2014-12-31 | 2015-06-03 | 深圳市明微电子股份有限公司 | Constant current driver circuit for LED and Switching Power Supply driving chip thereof |
| CN205430665U (en) * | 2015-12-11 | 2016-08-03 | 古道雄 | LED photovoltaic module and driver chip thereof |
-
2015
- 2015-12-11 CN CN201510923728.6A patent/CN105636264B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011186178A (en) * | 2010-03-09 | 2011-09-22 | Hitachi Displays Ltd | Liquid crystal display device |
| CN204377193U (en) * | 2014-12-31 | 2015-06-03 | 深圳市明微电子股份有限公司 | Constant current driver circuit for LED and Switching Power Supply driving chip thereof |
| CN205430665U (en) * | 2015-12-11 | 2016-08-03 | 古道雄 | LED photovoltaic module and driver chip thereof |
Non-Patent Citations (2)
| Title |
|---|
| 刘明亮等: "一种带过温保护和折返电流限的LDO 设计", 《微电子学》 * |
| 石合地等: "电流自适应高寿命低功耗LED驱动器", 《固体电子学研究与进展》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113421529A (en) * | 2021-05-25 | 2021-09-21 | 东风电驱动***有限公司 | Automobile instrument liquid crystal backlight protection circuit and method, automobile instrument and storage medium |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105636264B (en) | 2018-05-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105636263A (en) | LED photoelectric module and driving chip therefor | |
| CN103917012B (en) | A kind of white LED driver system with under-voltage locking and overheat protector module | |
| CN103383585B (en) | Wide input range and ultra low temperature drift band gap reference voltage source | |
| CN107272818B (en) | A kind of high voltage band-gap reference circuit structure | |
| CN105630060A (en) | LED driving chip and over-temperature protection point adjusting unit thereof | |
| CN205430665U (en) | LED photovoltaic module and driver chip thereof | |
| CN105636264A (en) | LED photoelectric module and driving chip therefor | |
| CN105722266A (en) | LED driving chip and over-temperature adjusting circuit thereof | |
| CN205430666U (en) | LED photovoltaic module and driver chip thereof | |
| CN203608412U (en) | An LED lamp driving power supply employing optical coupler feedback control | |
| CN117311457A (en) | Display card over-frequency circuit | |
| CN105934021A (en) | Overvoltage adjusting circuit for linear constant-current driving LED | |
| CN203691700U (en) | LED constant current driver | |
| CN205283873U (en) | LED driver chip and excess temperature protection point regulating unit thereof | |
| CN106211426A (en) | A kind of voltage amplification scale-up version cold light LED energy-saving electric power circuit | |
| CN211509348U (en) | LED lamp constant current output circuit with self-protection function | |
| CN205961501U (en) | Electric current self -adaptation low -power consumption LED drive circuit | |
| CN211509372U (en) | LED lamp constant current output circuit with over-temperature detection function | |
| CN205283872U (en) | LED driver chip and excess temperature regulating circuit thereof | |
| CN110944432A (en) | LED lamp constant current output circuit with over-temperature detection function and over-temperature detection method | |
| CN202615259U (en) | Current expansion device for three-end adjustable voltage stabilization block | |
| CN106604463B (en) | LED simulator | |
| CN205124034U (en) | A LED constant current supply circuit for car auxiliary illumination | |
| CN212231778U (en) | LED control chip and photoelectric module | |
| CN201860282U (en) | Starting-voltage-adjustable starting circuit of radiator fan |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20170122 Address after: 518000 Guangdong City, Nanshan District province high tech in the middle of the two road, No. 2 Shenzhen International Software Park, room 201-205, room, 4 (only office) (222-226) Applicant after: Shenzhen CYT Optoelectronic Technology Co.,Ltd. Address before: 518000 Shenzhen, Guangdong, Nanshan District, Shenzhen science and technology in the road, Shenzhen, the 4 floor of the software park, building 2, building two Applicant before: Gu Daoxiong |
|
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 518000 Guangdong City, Nanshan District province high tech in the middle of the two road, No. 2 Shenzhen International Software Park, room 201-205, room, 4 (only office) (222-226) Applicant after: Shenzhen mayor express Semiconductor Technology Co., Ltd. Address before: 518000 Guangdong City, Nanshan District province high tech in the middle of the two road, No. 2 Shenzhen International Software Park, room 201-205, room, 4 (only office) (222-226) Applicant before: Shenzhen CYT Optoelectronic Technology Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |