CN105609043B - A kind of display device and its driving circuit and its driving method - Google Patents
A kind of display device and its driving circuit and its driving method Download PDFInfo
- Publication number
- CN105609043B CN105609043B CN201410686226.1A CN201410686226A CN105609043B CN 105609043 B CN105609043 B CN 105609043B CN 201410686226 A CN201410686226 A CN 201410686226A CN 105609043 B CN105609043 B CN 105609043B
- Authority
- CN
- China
- Prior art keywords
- transistor
- driving
- emitting diode
- grid
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a kind of display device and its driving circuit and its driving method, which includes：Scan transistor, driving transistor, storage capacitance and photocurrent detection device；The grid of scan transistor connects scanning signal, and source electrode connects data-signal；The grid of driving transistor connects the drain electrode of the scan transistor, drain electrode connection voltage source, and source electrode is grounded by light emitting diode, wherein the anode of the light emitting diode is connect with the source electrode of the driving transistor, the minus earth of light emitting diode；One pole plate of the storage capacitance connects the voltage source, another pole plate connects the grid of the driving transistor；Photocurrent detection device is connect with the grid of the scan transistor, and the photocurrent detection device is used to after scan transistor disconnection obtain the photoelectric current that the scan transistor generates due to sensing the light emitting diode and emitting light.The test to lumination of light emitting diode intensity may be implemented in the driving circuit.
Description
Technical field
The present invention relates to display technology field, more specifically to a kind of display device and its driving circuit and its driving
Method.
Background technology
Light emitting diode is divided into Organic Light Emitting Diode (OLED) and inorganic light-emitting diode according to chemical property
(LED).The display device prepared using light emitting diode is had since it is high with brightness, service life is long and angle of visibility is big etc.
Point becomes one of current mainstream display device type.
Display device prepared by existing light emitting diode in the performance test, can only test whole all pixels list
The luminous intensity of light emitting diode in member cannot carry out the luminous intensity test of the light emitting diode of single pixel.
Invention content
To solve the above problems, technical solution of the present invention provides a kind of display device and its driving circuit and its driving side
Method, the technical solution can test the luminous intensity of single pixel light emitting diode.
To achieve the above object, the present invention provides a kind of driving circuit of display device, the driving circuit includes：
A kind of driving circuit of display device, the driving circuit include：Scan transistor, driving transistor, storage capacitance
And photocurrent detection device；
The grid of the scan transistor connects scanning signal, and source electrode connects data-signal；
The grid of the driving transistor connects the drain electrode of the scan transistor, drain electrode connection voltage source, source electrode
It is grounded by light emitting diode, wherein the anode of the light emitting diode is connect with the source electrode of the driving transistor, the hair
The minus earth of optical diode；
One pole plate of the storage capacitance connects the voltage source, another pole plate connects the grid of the driving transistor
Pole；
The photocurrent detection device is connect with the grid of the scan transistor, and the photocurrent detection device is used for
The scan transistor obtains the photoelectricity that the scan transistor generates due to sensing the light emitting diode and emitting light after disconnecting
Stream.
Preferably, in above-mentioned driving circuit, the scan transistor is bottom gate type TFT；
Wherein, the source electrode of the bottom gate type TFT and drain electrode are transparent electrode；The bottom gate type TFT's
Drain electrode and source electrode are arranged towards the light emitting diode, the transmitting light for obtaining the light emitting diode, the bottom gate type
The grid of TFT is arranged away from the light emitting diode.
Preferably, in above-mentioned driving circuit, the transparent electrode is ITO electrode or nano silver electrode or graphene electricity
Pole or metal grid electrode or carbon nanotube electrode.
Preferably, in above-mentioned driving circuit, the scan transistor is top gate type TFT；
Wherein, the source electrode of the top gate type TFT and drain electrode are arranged towards the light emitting diode, for obtaining the hair
The grid of the transmitting light of optical diode, the top gate type TFT is arranged away from the light emitting diode.
Preferably, in above-mentioned driving circuit, the grid of the scan transistor and source electrode using amorphous silicon material or
Low temperature polycrystalline silicon material preparation.
Preferably, in above-mentioned driving circuit, the light emitting diode is Organic Light Emitting Diode or inorganic light-emitting two
Pole pipe.
Preferably, in above-mentioned driving circuit, the scan transistor and the driving transistor are PMOS tube.
Preferably, in above-mentioned driving circuit, the scan transistor and the driving transistor are NMOS tube.
The present invention also provides a kind of driving methods, are used for driving circuit described in any one of the above embodiments, the driving method packet
It includes：
The scanning signal that the first level is provided for the grid of the scan transistor controls the scan transistor and institute
Driving transistor conducting is stated, so that storage capacitance charging and the lumination of light emitting diode；
The scanning signal that second electrical level is provided for the grid of the scan transistor controls the scan transistor and disconnects,
The driving transistor conducting is kept by storage capacitance electric discharge, so that the light emitting diode continuous illumination；
After scan transistor disconnection, the scan transistor is obtained because of sensing by the photocurrent detection device
The light emitting diode emits light and the photoelectric current that generates.
Preferably, in above-mentioned driving method, the scan transistor and the driving transistor are NMOS tube, described
The scanning signal of the first level is provided it is for the grid of the scan transistor：It provides and is more than for the grid of the scan transistor
The scanning signal of the NMOS transistor gate turn-on threshold voltage.
Preferably, in above-mentioned driving method, the scan transistor and the driving transistor are PMOS tube, described
The scanning signal of the first level is provided it is for the grid of the scan transistor：It provides and is less than for the grid of the scan transistor
The scanning signal of the PMOS transistor gate turn-on threshold voltage.
The present invention also provides a kind of display device, which includes：
Multiple pixel units and driving circuit for driving the pixel unit；
Wherein, the driving circuit is driving circuit described in any one of the above embodiments.
By foregoing description it is found that the technical solution of the present invention offer driving circuit includes：Scan transistor, driving are brilliant
Body pipe, storage capacitance and photocurrent detection device；The grid of the scan transistor connects scanning signal, and source electrode connects number
It is believed that number；The grid of the driving transistor connects the drain electrode of the scan transistor, drain electrode connection voltage source, and source electrode leads to
Cross light emitting diode ground connection, wherein the anode of the light emitting diode is connect with the source electrode of the driving transistor, described to shine
The minus earth of diode；One pole plate of the storage capacitance connects the voltage source, another pole plate connects the driving
The grid of transistor；The photocurrent detection device is connect with the grid of the scan transistor, the photocurrent detection device
It is generated due to sensing the light emitting diode and emitting light for obtaining the scan transistor after scan transistor disconnection
Photoelectric current.
The driving circuit is by being arranged the photocurrent detection device being connect with the scan transistor, in scanning crystalline substance
Body pipe obtains the photoelectric current that the scan transistor generates due to sensing the light emitting diode and emitting light after disconnecting, with realization pair
The test of the lumination of light emitting diode intensity of single pixel, convenient for display device performance test and the maintenance platoon of bad point pixel
It looks into.
The present invention also provides a kind of driving methods for driving above-mentioned driving circuit, can be in the light emitting diode
Carry out test of the realization to its luminous intensity while luminescence display.
The present invention also provides a kind of display device, each pixel of the display device be all made of above-mentioned driving circuit into
Row driving display, test of the realization to its luminous intensity while the light emitting diode carries out luminescence display.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of structural schematic diagram of driving circuit provided by the embodiments of the present application；
Fig. 2 is scan transistor, storage capacitance and driving transistor when driving circuit shown in Fig. 1 is scanned driving
Oscillogram；
Fig. 3 is a kind of light sensitivity principles schematic diagram of scan transistor provided by the embodiments of the present application；
Fig. 4 is the light sensitivity principles schematic diagram of another scan transistor provided by the embodiments of the present application；
Fig. 5 is a kind of flow diagram of driving method provided by the embodiments of the present application.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
When carrying out luminous intensity test to the display device that Light-Emitting Diode is constituted in the prior art, whole institute can only be tested
There is the luminous intensity of light emitting diode in pixel unit, the luminous intensity test of the light emitting diode of single pixel cannot be carried out.
Therefore, when being safeguarded to display device, it is not easy to which the position for determining bad point pixel is not easy to overhaul of the equipments.
With reference to figure 1, Fig. 1 is a kind of structural schematic diagram of the driving circuit 10 of display device provided by the embodiments of the present application,
The driving circuit 10 includes：Scan transistor T1, driving transistor T2, storage capacitance C1 and photocurrent detection device 11.
The test of the luminous intensity of the light emitting diode of single pixel may be implemented in driving circuit 10 shown in Fig. 1.
The grid of the scan transistor T1 connects scanning signal G, and source electrode connects data-signal Date.
The grid of the driving transistor T2 connects the drain electrode of the scan transistor T1, and drain electrode connects voltage source VDD,
Its source electrode is grounded by light emitting diode D1, wherein the source of the anode of the light emitting diode D1 and the driving transistor T2
Pole connects, the minus earth of the light emitting diode D1.
A pole plate of the storage capacitance C1 connects the voltage source VDD, another pole plate connects the driving crystal
The grid T2 of pipe.
The photocurrent detection device 11 is connect with the grid of the scan transistor T1, the photocurrent detection device 11
Emit light because sensing the light emitting diode D1 for obtaining the scan transistor T1 when the scan transistor T1 is disconnected
And the photoelectric current generated.
The driving circuit 10 shown in Fig. 1 is by being arranged the photocurrent detection device being connect with the scan transistor T1
11, the scan transistor T1 is obtained when the scan transistor T1 is disconnected due to sensing the light emitting diode D1 and emitting light
The photoelectric current of generation, so as to realize the test to the lumination of light emitting diode intensity of single pixel.
With reference to figure 2, Fig. 2 be driving circuit shown in Fig. 1 when being scanned driving scan transistor T1, storage capacitance C1 and
The oscillogram of driving transistor T2.Wherein, the longitudinal axis of Fig. 2 (a) indicates the grid voltage of scan transistor T1, the longitudinal axis of Fig. 2 (b)
Indicate that the electricity of storage capacitance C1, the longitudinal axis of Fig. 2 (c) indicate the grid voltage of driving transistor T2, the cross of Fig. 2 (a)-Fig. 2 (c)
Axis indicates the time.
In a scan period T, within [0, the t] moment, the grid G ate of the scan transistor T1 applies scanning letter
When number G, drain D rain is connected with source S ource, and the driving transistor is driven to pass through the data-signal Date
T2 is connected, and drives the light emitting diode D1 to shine by the voltage source VDD, while charging for the storage capacitance C1.
At [t, T] in the moment, scan transistor T1 scanning signals G is zero, scan transistor T1 shutdowns, at this time storage capacitance
C1 discharges, and maintains driving transistor T2 conductings, so that voltage source VDD can continue driving diode D1 continuous illuminations.
When the scan transistor T1 is turned off, the scan transistor T1 can be used as light sensitive diode element, leakage
Pole Drain and grid G ate and source S ource and grid G ate can be considered as light sensitive diode, therefore, in its grid
Gate can generate photoelectric current due to the light intensity of perception light emitting diode D1, be obtained by the photocurrent detection device 11 described
Photoelectric current is that can determine the luminous intensity of the light emitting diode D1 according to the size of the photoelectric current, that is, obtains this and shine
The brightness of pixel where diode D1.
It should be noted that the scan transistor T1 and driving transistor T2 is crystal switch in this application
Pipe, when they are connected, source-drain voltage is identical, therefore, both the two source electrode describes to distinguish with drain electrode two ports, source electrode
It is two equivalent ports with drain electrode, in the same transistor, source electrode can be interchanged with drain locations.
In the driving circuit 10, the scan transistor T1 and driving transistor T2 is TFT.
The scan transistor T1 can be bottom gate type TFT30 as shown in Figure 3.As shown in figure 3, working as scan transistor T1
When shutdown, drain D rain and source S ource can constitute light sensitive diode element with its grid G ate, in grid G ate shapes
At photoelectric current (in Fig. 3 shown in solid arrow), by testing the size of the photoelectric current, so as to realize to described luminous two
Pole pipe D1 luminous intensities sense, and photocurrent detection device 11 is according to the size of the scan transistor T1 grid Gs ate photoelectric currents
The light emitting diode D1 luminous intensities can be measured.
The source electrode 32 and drain electrode 31 of the bottom gate type TFT30 is transparent electrode, in order to its drain D rain
With source S ource senses light intensities；The drain D rain and source S ource of the bottom gate type TFT30 is towards the light-emitting diodes
Pipe D1 settings, the transmitting light (in Fig. 3 shown in dotted arrow) for obtaining the light emitting diode D1, the bottom gate type TFT30
Grid G ate away from the light emitting diode D1 be arranged.Wherein, the transparent electrode be ITO electrode or nano silver electrode or
Graphene electrodes or metal grid electrode or carbon nanotube electrode；Substrate 33 can be transparent substrate or nontransparent substrate.
The scan transistor T1 can also be top gate type TFT40 as shown in Figure 4.At this point, the top gate type TFT40
Source S ource and drain D rain is arranged towards the light emitting diode D1, the transmitting for obtaining the light emitting diode
The grid G ate of light (in Fig. 4 shown in dotted arrow), the top gate type TFT40 is arranged away from the light emitting diode D1.At this point,
The source electrode 42 and drain electrode 41 of the top gate type TFT40 can be non-transparent electrode, as aluminium electrode, silver electrode or
Silver-colored aluminium electrode etc..When top gate type TFT40 is disconnected, illumination can be sensed and generate photoelectric current, solid arrow indicates photoelectricity in Fig. 4
Stream.At this point, in order to enable the source S ource and drain D rain can be with senses light intensity, substrate 43 is transparent substrate, such as may be used
Think glass substrate.In Fig. 3 and Fig. 4, p indicates that type semiconductor layer, n indicate n-type semiconductor layer.
In the embodiment of the present application, the grid G ate and source S ource of the scan transistor T1 uses amorphous silicon material
Or low temperature polycrystalline silicon material preparation.The light emitting diode D1 is Organic Light Emitting Diode or inorganic light-emitting diode.
The scan transistor is PMOS tube or the scan transistor and the driving with the driving transistor
Transistor is NMOS tube, it is not limited to type shown in the embodiment of the present application attached drawing.
By foregoing description it is found that driving circuit described in the embodiment of the present application can using the photobehavior of scan transistor
To realize the test to lumination of light emitting diode intensity during being scanned, and it is aobvious not influence shining for driving circuit
Show, realization method is simple, is investigated convenient for display device performance test and the repair of bad point pixel.
The embodiment of the present application also provides a kind of driving methods, for the driving electricity described in any of the above-described kind of embodiment
Road, the driving method include：
Step S11：The scanning signal that the first level is provided for the grid of the scan transistor controls the scanning crystal
Pipe and driving transistor conducting, so that storage capacitance charging and the lumination of light emitting diode.
Step S12：The scanning signal that second electrical level is provided for the grid of the scan transistor controls the scanning crystal
Pipe disconnects, and keeps the driving transistor to be connected by storage capacitance electric discharge, so that the light emitting diode continues
It shines.
Step S13：After scan transistor disconnection, the scanning crystal is obtained by the photocurrent detection device
The photoelectric current that pipe generates due to sensing the light emitting diode and emitting light.
The luminous intensity of the light emitting diode can be measured according to the size of the photoelectric current, you can to obtain corresponding picture
The brightness of element.
When the scan transistor and the driving transistor are NMOS tube, the grid for the scan transistor
Pole provide the first level scanning signal be：It provides and is led more than the NMOS transistor grid for the grid of the scan transistor
The scanning signal of logical threshold voltage, so that the NMOS is connected.It is corresponding, at this point, the grid for the scan transistor
Pole provide second electrical level scanning signal be：It provides and is led less than the NMOS transistor grid for the grid of the scan transistor
The scanning signal of logical threshold voltage, so that the NMOS is disconnected.
When the scan transistor and the driving transistor are PMOS tube, the grid for the scan transistor
Pole provide the first level scanning signal be：It provides and is led less than the PMOS transistor grid for the grid of the scan transistor
The scanning signal of logical threshold voltage, so that the PMOS is connected.It is corresponding, at this point, the grid for the scan transistor
Pole provide second electrical level scanning signal be：It provides and is led more than the PMOS transistor grid for the grid of the scan transistor
The scanning signal of logical threshold voltage, so that the PMOS is disconnected.
Driving method described in the present embodiment is based on driving circuit described in the above embodiment, and identical similarity can be mutual
With reference to supplementary explanation, here, repeating no more.
By foregoing description it is found that driving method described in the embodiment of the present application, can again drive the driving circuit
It is realized to the test of the luminous intensity of light emitting diode while the process of dynamic display, that is, realizes the survey of the brightness to respective pixel
Examination, realization method is simple, and does not influence the luminescence display of driving circuit, convenient for display device performance test and bad point pixel
Repair investigation.
The embodiment of the present application also provides a kind of display device, which includes：It multiple pixel units and is used for
Drive the driving circuit of the pixel unit.Wherein, the driving circuit is the driving circuit described in any of the above-described embodiment.
The display device is using driving circuit described in the above embodiment, while realizing display driving, Ke Yishi
Now to the test of pixel intensity, realization method is simple, and does not influence to show, is convenient for display device performance test and bad point pixel
Repair investigation.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest range caused.
Claims (12)
1. a kind of driving circuit of display device, which is characterized in that including：Scan transistor, driving transistor, storage capacitance with
And photocurrent detection device；
The grid of the scan transistor connects scanning signal, and source electrode connects data-signal；
The grid of the driving transistor connects the drain electrode of the scan transistor, drain electrode connection voltage source, and source electrode passes through
Light emitting diode is grounded, wherein and the anode of the light emitting diode is connect with the source electrode of the driving transistor, and described luminous two
The minus earth of pole pipe；
One pole plate of the storage capacitance connects the voltage source, another pole plate connects the grid of the driving transistor；
The photocurrent detection device is connect with the grid of the scan transistor, and the photocurrent detection device is used for described
Scan transistor obtains the photoelectric current that the scan transistor generates due to sensing the light emitting diode and emitting light after disconnecting.
2. driving circuit according to claim 1, which is characterized in that the scan transistor is bottom gate type TFT；
Wherein, the source electrode of the bottom gate type TFT and drain electrode are transparent electrode；The drain electrode of the bottom gate type TFT
And source electrode is arranged towards the light emitting diode, the transmitting light for obtaining the light emitting diode, the bottom gate type TFT's
Grid is arranged away from the light emitting diode.
3. driving circuit according to claim 2, which is characterized in that the transparent electrode is ITO electrode or nano silver electricity
Pole or Graphene electrodes or metal grid electrode or carbon nanotube electrode.
4. driving circuit according to claim 1, which is characterized in that the scan transistor is top gate type TFT；
Wherein, the source electrode of the top gate type TFT and drain electrode are arranged towards the light emitting diode, for obtaining described luminous two
The grid of the transmitting light of pole pipe, the top gate type TFT is arranged away from the light emitting diode.
5. driving circuit according to claim 1, which is characterized in that the grid of the scan transistor is with source electrode using non-
Crystal silicon material or low temperature polycrystalline silicon material preparation.
6. driving circuit according to claim 1, which is characterized in that the light emitting diode be Organic Light Emitting Diode or
It is inorganic light-emitting diode.
7. according to claim 1-6 any one of them driving circuits, which is characterized in that the scan transistor and the driving
Transistor is PMOS tube.
8. according to claim 1-6 any one of them driving circuits, which is characterized in that the scan transistor and the driving
Transistor is NMOS tube.
9. a kind of driving method, for such as claim 1-8 any one of them driving circuits, which is characterized in that including：
The scanning signal that the first level is provided for the grid of the scan transistor controls the scan transistor and the drive
Dynamic transistor turns, so that storage capacitance charging and the lumination of light emitting diode；
The scanning signal that second electrical level is provided for the grid of the scan transistor controls the scan transistor and disconnects, passes through
The storage capacitance electric discharge keeps the driving transistor conducting, so that the light emitting diode continuous illumination；
After scan transistor disconnection, the scan transistor is obtained because described in sensing by the photocurrent detection device
Light emitting diode emits light and the photoelectric current that generates.
10. driving method according to claim 9, which is characterized in that the scan transistor and the driving transistor
It is NMOS tube, the scanning signal that the grid for the scan transistor provides the first level is：For the scanning crystal
The grid of pipe provides the scanning signal more than the NMOS transistor gate turn-on threshold voltage.
11. driving method according to claim 9, which is characterized in that the scan transistor and the driving transistor
It is PMOS tube, the scanning signal that the grid for the scan transistor provides the first level is：For the scanning crystal
The grid of pipe provides the scanning signal less than the PMOS transistor gate turn-on threshold voltage.
12. a kind of display device, which is characterized in that including：
Multiple pixel units and driving circuit for driving the pixel unit；
Wherein, the driving circuit is such as claim 1-8 any one of them driving circuits.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410686226.1A CN105609043B (en) | 2014-11-25 | 2014-11-25 | A kind of display device and its driving circuit and its driving method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410686226.1A CN105609043B (en) | 2014-11-25 | 2014-11-25 | A kind of display device and its driving circuit and its driving method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105609043A CN105609043A (en) | 2016-05-25 |
| CN105609043B true CN105609043B (en) | 2018-08-10 |
Family
ID=55988935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410686226.1A Active CN105609043B (en) | 2014-11-25 | 2014-11-25 | A kind of display device and its driving circuit and its driving method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105609043B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI778810B (en) * | 2021-09-24 | 2022-09-21 | 友達光電股份有限公司 | Light emitting diode driving circuit |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101047200A (en) * | 2006-03-28 | 2007-10-03 | 统宝光电股份有限公司 | Organic electroluminescent display device and fabrication methods thereof |
| CN101047199A (en) * | 2006-03-28 | 2007-10-03 | 统宝光电股份有限公司 | Organic electroluminescent display device and fabrication methods thereof |
| CN101197107A (en) * | 2001-10-31 | 2008-06-11 | 剑桥显示技术公司 | Method for controlling brightness of electro-optic display element in active matrix display |
| KR20080059800A (en) * | 2006-12-26 | 2008-07-01 | 엘지디스플레이 주식회사 | Device of driving organic electro-luminescence display device and method thereof |
| CN100539179C (en) * | 2006-05-02 | 2009-09-09 | 统宝光电股份有限公司 | Organic electro-luminescent display unit and manufacture method thereof |
| CN101887687A (en) * | 2009-05-12 | 2010-11-17 | 索尼公司 | Image element circuit, display device and be used for the driving method of image element circuit |
| CN102564581A (en) * | 2010-12-14 | 2012-07-11 | 元太科技工业股份有限公司 | Photosensing circuit unit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7442950B2 (en) * | 2004-12-06 | 2008-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
-
2014
- 2014-11-25 CN CN201410686226.1A patent/CN105609043B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101197107A (en) * | 2001-10-31 | 2008-06-11 | 剑桥显示技术公司 | Method for controlling brightness of electro-optic display element in active matrix display |
| CN101047200A (en) * | 2006-03-28 | 2007-10-03 | 统宝光电股份有限公司 | Organic electroluminescent display device and fabrication methods thereof |
| CN101047199A (en) * | 2006-03-28 | 2007-10-03 | 统宝光电股份有限公司 | Organic electroluminescent display device and fabrication methods thereof |
| CN100539179C (en) * | 2006-05-02 | 2009-09-09 | 统宝光电股份有限公司 | Organic electro-luminescent display unit and manufacture method thereof |
| KR20080059800A (en) * | 2006-12-26 | 2008-07-01 | 엘지디스플레이 주식회사 | Device of driving organic electro-luminescence display device and method thereof |
| CN101887687A (en) * | 2009-05-12 | 2010-11-17 | 索尼公司 | Image element circuit, display device and be used for the driving method of image element circuit |
| CN102564581A (en) * | 2010-12-14 | 2012-07-11 | 元太科技工业股份有限公司 | Photosensing circuit unit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105609043A (en) | 2016-05-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104393024B (en) | OLED pixel structure as well as preparation method, ultraviolet light detection method and ultraviolet light detection device thereof | |
| CN106486526B (en) | Organic light emitting diode display | |
| US20140159733A1 (en) | Detection apparatus for light-emitting diode chip | |
| CN105913801B (en) | A kind of organic light emitting display panel and its driving method | |
| CN106683605A (en) | Failure pixel detection circuit and method and display device | |
| JP5380286B2 (en) | Thin film transistor array having inspection circuit | |
| CN106598327A (en) | Touch display driving unit circuit, driving method, circuit and display device | |
| CN104751798B (en) | Pixel-driving circuit, display device and image element driving method | |
| CN103236238B (en) | Pixel unit control circuit and display device | |
| CN107749279B (en) | OLED drive and AMOLED display panel | |
| EP3564935B1 (en) | K value sensing method for oled driving thin film transistor | |
| CN104143562B (en) | Organic light emitting diode display | |
| CN106097943A (en) | OLED drives the threshold voltage method for detecting of thin film transistor (TFT) | |
| CN106782319A (en) | A kind of image element circuit, image element driving method, display device | |
| CN104112426A (en) | OLED pixel drive circuit, electrostatic discharge protection circuit and detection method | |
| CN107274836A (en) | AMOLED display panels and display device with temperature compensation function | |
| CN106157895A (en) | A kind of organic electroluminescence display panel and driving method thereof | |
| CN109119356A (en) | The detection device and detection method of array substrate | |
| CN105609043B (en) | A kind of display device and its driving circuit and its driving method | |
| CN102542977B (en) | Organic light emitting diode pixel structure, display panel and electronic display device | |
| CN105792430A (en) | Method for prolonging service life of OLED light-emitting device through AC driving | |
| CN104501068A (en) | Intelligent advertising street lamp and method for controlling same | |
| CN204313190U (en) | A kind of intelligent advertisement street lamp | |
| CN106373512B (en) | A kind of sensing circuit and method for sensing based on OLED | |
| CN108335658A (en) | Display panel and display test device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |