CN104393024B - OLED pixel structure as well as preparation method, ultraviolet light detection method and ultraviolet light detection device thereof - Google Patents
OLED pixel structure as well as preparation method, ultraviolet light detection method and ultraviolet light detection device thereof Download PDFInfo
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- CN104393024B CN104393024B CN201410727630.9A CN201410727630A CN104393024B CN 104393024 B CN104393024 B CN 104393024B CN 201410727630 A CN201410727630 A CN 201410727630A CN 104393024 B CN104393024 B CN 104393024B
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Abstract
The invention discloses an OLED pixel structure as well as a preparation method, an ultraviolet light detection method and an ultraviolet light detection device thereof in order to solve the problems that an array substrate of an existing ultraviolet light detection device is complicated in structure and relatively high in preparation cost. The OLED pixel structure comprises a substrate, a light shielding layer, a transparent insulating layer, a light sensing TFT, a switch TFT, an anode, a pixel definition layer, an organic light emitting layer and a transparent cathode, wherein the light shielding layer and the transparent insulating layer are sequentially formed on the substrate; the light shielding layer comprises a light transmitting region; the light sensing TFT and the switch TFT are formed on the transparent insulating layer; the light sensing TFT is arranged above the light transmitting region; a channel region of the light sensing TFT directly faces to the light transmitting region; the light sensing TFT and the switch TFT comprise source and drain metal layers, active layers, grid insulating layers, grid electrodes and passivation layers formed on the transparent insulating layer in sequence; the source electrode o the light sensing TFT is electrically connected with the drain electrode of the switch TFT; the anode, the pixel definition layer, the organic light emitting layer and the transparent cathode are formed on the passivation layer; the anode is electrically connected with the source electrode of the switch TFT by passing through a through hole.
Description
Technical field
The present invention relates to ultraviolet technical field of light detection, more particularly to OLED pixel structure and preparation method thereof, ultraviolet light
Detection method and device.
Background technology
Ultraviolet light has certain injury to human body skin, and stronger ultraviolet light can make skin burn, be in for a long time
Possibly even cause dermatosiss in stronger ultraviolet light environments.For example be directly exposed under sunlight, under altitude environment, tool
Have under the medical work environment of ultraviolet light or under the production environment with ultraviolet light, there is a possibility that human body skin is damaged.In order to
To whether there is stronger ultraviolet light in environment, the intensity of ultraviolet light being judged, by Organic Light Emitting Diode in prior art
(Organic Light Emitting Diode, OLED) Display Technique is implemented in combination with showing detection environment in real time with detection technique
The function of ultraviolet, OLED display have luminosity height, low driving voltage, fast response time, it is ultra-thin frivolous the features such as, just
Ultraviolet light is detected into site environment or movement in carrying, is advantageously used for being applied to miniscope, head mounted display (Head
Mount Display, HMD), head up displays (Head UP Display, HUD) and interactive HMD or show in real time it is ultraviolet
In detection means.
Now technology is typically in the thin film transistor (TFT) (Thin Film Transistor, TFT) of display array substrate
Outside, PN junction is prepared as photoelectric conversion layer, after PN junction when outside ultraviolet light is received turns on the TFT being connected, control
Display shows, so as to realizing the detection to outside ultraviolet light and showing.But, based on prior art, need in tft array
Outside unit the optical signal change-over circuit that PN junction is constituted is set, therefore make the complex structure of array base palte；Meanwhile, in TFT processing procedures
Outside need increase PN junction processing procedure, increased preparation cost.
The content of the invention
It is an object of the invention to provide OLED pixel structure and preparation method thereof, ultraviolet light detection method and device, to solve
The array base-plate structure of certainly existing ultraviolet optical detection device is complicated, the problem that preparation cost is higher.
The purpose of the present invention is achieved through the following technical solutions：
The embodiment of the present invention provides a kind of OLED pixel structure, including：
Lining underlay substrate；
The light shield layer and transparent insulating layer being sequentially formed on the underlay substrate, the light shield layer has transparent area；
The photosensitive TFT and switch TFT, the photosensitive TFT being formed on the transparent insulating layer is arranged at the printing opacity
The top in area, the channel region of the photosensitive TFT is just to the transparent area；Wherein, the photosensitive TFT and the switch TFT bags
Source-drain electrode metal level, active layer, gate insulator, gate electrode and the passivation layer being sequentially formed on the transparent insulating layer is included,
The source-drain electrode metal level includes source electrode and drain electrode, and the source electrode of the photosensitive TFT is electric with the drain electrode of the switch TFT
Connection；
It is formed at the anode on the passivation layer, pixel and defines layer, organic luminous layer and transparent cathode, the anode leads to
Via is electrically connected with the drain electrode of the switch TFT.
In the embodiment of the present invention, the described photosensitive TFT of OLED pixel structure, its described transparent area of channel region correspondence simultaneously connects
The outside ultraviolet light that receipts are passed through by the transparent area, because the source electrode of the photosensitive TFT connects with the drain electrode of the switch TFT
Connect, therefore the photosensitive TFT can make the switch TFT control the organic of the OLED pixel structure after ultraviolet light is detected
Luminescent layer is lighted, so as to detection and display to outside ultraviolet light.
Preferably, the OLED pixel structure also includes the planarization being arranged between the passivation layer and the anode
Layer.
Preferably, the photosensitive TFT and switch TFT is N-type metal-oxide TFT.
Preferably, the underlay substrate is quartz base plate.In the embodiment of the present invention, using quartz base plate as the substrate base
Plate, can increase the transmitance of ultraviolet light, make the loss of the ultraviolet light of transmission and reduce, and make the OLED pixel structure to ultraviolet light
Detection it is more accurate.
Preferably, the material of the light shield layer is lighttight metal or Organic substance.
Preferably, the material of the transparent insulating layer is SiO2, and thickness is 1000-3000 angstrom.It is described in the present embodiment
Bright insulating barrier can provide flatter surface, be conducive to the preparation of OLED pixel unit.
Preferably, the material of the anode is metal material or composite film to ultraviolet light high reflection.
The embodiment of the present invention has the beneficial effect that：The described photosensitive TFT of OLED pixel structure, its channel region correspondence is described
The outside ultraviolet light that transparent area and reception are passed through by the transparent area, due to source electrode and the switch TFT of the photosensitive TFT
Drain electrode connection, therefore the photosensitive TFT can make the switch TFT control OLED pixel after ultraviolet light is detected
The organic luminous layer of structure is lighted, so as to detection and display to outside ultraviolet light；The photosensitive TFT and the switch
TFT is identical structure and synchronous formation, therefore does not need extra preparation technology, reduces preparation cost；The photosensitive TFT exists
The signal of telecommunication can be provided for the switch TFT after conducting, therefore PN junction and interlock circuit need not be increased, the structure of array base palte
It is relatively easy.
The embodiment of the present invention provides a kind of ultraviolet optical detection device, including at least one is performed as described above the OLED pictures that example is provided
Plain structure.
The embodiment of the present invention has the beneficial effect that：The described photosensitive TFT of OLED pixel structure, its channel region correspondence is described
The outside ultraviolet light that transparent area and reception are passed through by the transparent area, due to source electrode and the switch TFT of the photosensitive TFT
Drain electrode connection, therefore the photosensitive TFT can make the switch TFT control OLED pixel after ultraviolet light is detected
The organic luminous layer of structure is lighted, so as to detection and display to outside ultraviolet light；The photosensitive TFT and the switch
TFT is identical structure and synchronous formation, therefore does not need extra preparation technology, reduces preparation cost；The photosensitive TFT exists
The signal of telecommunication can be provided for the switch TFT after conducting, therefore PN junction and interlock circuit need not be increased, the structure of array base palte
It is relatively easy.
The embodiment of the present invention provides a kind of preparation method of OLED pixel structure, including：
One underlay substrate is provided；
Shading layer film is formed on the underlay substrate, forming shading layer film by patterning processes includes transparent area
Light shield layer；
Transparent insulating layer is formed in the light shield layer；
Source electrode and drain electrode place layer, active layer, gate insulator, grid are sequentially formed on the transparent insulating layer
Electrode place layer and passivation layer, so as to synchronous preparation completes photosensitive TFT and switch TFT；Wherein, the photosensitive TFT is arranged at institute
State the top of transparent area, the channel region of the photosensitive TFT is just to the transparent area, and source electrode and the institute of the photosensitive TFT
State the drain electrode electrical connection of switch TFT；
Successively anode, pixel define layer, organic luminous layer and transparent cathode on the passivation layer, lead to the anode
Via is electrically connected with the drain electrode of the switch TFT.
Preferably, it is additionally included between the passivation layer and the anode and forms planarization layer.
The embodiment of the present invention has the beneficial effect that：The described photosensitive TFT of OLED pixel structure, its channel region correspondence is described
The outside ultraviolet light that transparent area and reception are passed through by the transparent area, due to source electrode and the switch TFT of the photosensitive TFT
Drain electrode connection, therefore the photosensitive TFT can make the switch TFT control OLED pixel after ultraviolet light is detected
The organic luminous layer of structure is lighted, so as to detection and display to outside ultraviolet light；The photosensitive TFT and the switch
TFT is identical structure and synchronous formation, therefore does not need extra preparation technology, reduces preparation cost；The photosensitive TFT exists
The signal of telecommunication can be provided for the switch TFT after conducting, therefore PN junction and interlock circuit need not be increased, the structure of array base palte
It is relatively easy.
The embodiment of the present invention provides a kind of ultraviolet light detection method, including：
The source electrode for making photosensitive TFT connects high level signal, and the gate electrode of the photosensitive TFT connects the first control signal, switch
The gate electrode of TFT connects the second control signal；
In first time period, first control signal be high level, second control signal be low level, the sense
Light TFT is turned on, the switch TFT shut-offs；
In second time period, first control signal be low level, second control signal be high level, the sense
Light TFT is turned off, the switch TFT conductings, turns on after the incident ultraviolet light of the photosensitive TFT detections transparent area and itself leaks electricity
The anode that TFT is supplied to OLED pixel structure is switched described in the high level signal Jing that pole receives, the organic of OLED pixel structure is made
Luminescent layer lights；
3rd time period to the end of scan, first control signal repeat first time period and second time period when
Sequence, reset the photosensitive TFT, and second control signal is low level, turns off the switch TFT.
The embodiment of the present invention has the beneficial effect that：The channel region correspondence transparent area of the photosensitive TFT and reception by
The outside ultraviolet light that the transparent area is passed through, because the source electrode of the photosensitive TFT is connected with the drain electrode of the switch TFT,
Therefore the photosensitive TFT can make organic of the switch TFT controls OLED pixel structure after ultraviolet light is detected
Photosphere lights, so as to detection and display to outside ultraviolet light.
Description of the drawings
Fig. 1 is a kind of generalized section of OLED pixel structure provided in an embodiment of the present invention；
Fig. 2 is the generalized section of another kind of OLED pixel structure provided in an embodiment of the present invention；
Fig. 3 is the schematic top plan view of OLED pixel array in a kind of ultraviolet optical detection device provided in an embodiment of the present invention；
Fig. 4 is a kind of flow chart of the preparation method of OLED pixel structure provided in an embodiment of the present invention；
Fig. 5 is a kind of flow chart of ultraviolet light detection method provided in an embodiment of the present invention；
When Fig. 6 is detected for OLED pixel structure provided in an embodiment of the present invention for ultraviolet light, photosensitive TFT and switch TFT
The schematic diagram of connection；
Fig. 7 is photosensitive TFT provided in an embodiment of the present invention and the control sequential figure of switch TFT.
Reference：
Underlay substrate 1；Light shield layer 2；Transparent area 21；Transparent insulating layer 3；Photosensitive TFT 4；The drain electrode 41 of photosensitive TFT；Sense
The source electrode 42 of light TFT；The gate electrode 43 of photosensitive TFT；Switch TFT 5；The drain electrode 51 of switch TFT；The source electrode of switch TFT
52；The gate electrode 53 of switch TFT；Electrode 6；The active layer 7 of photosensitive TFT；The active layer 8 of switch TFT；Gate insulator 9；Passivation
Layer 10；Flatness layer 11；Anode 12；Pixel defines layer 13；Organic luminous layer 14；Negative electrode 15.
Specific embodiment
Process is described in detail to be realized to the embodiment of the present invention with reference to Figure of description.It should be noted that
From start to finish same or similar label represents same or similar element or the element with same or like function.Lead to below
It is exemplary to cross the embodiment being described with reference to the drawings, and is only used for explaining the present invention, and is not considered as limiting the invention.
Referring to Fig. 1, the present invention provides a kind of OLED pixel structure, including：
Underlay substrate 1；The light shield layer 2 and transparent insulating layer 3 being sequentially formed on underlay substrate 1, light shield layer 2 has one
Transparent area 21；Photosensitive TFT 4 and switch TFT 5, photosensitive TFT 4 and switch TFT 5 include being sequentially formed in transparent insulation respectively
Source-drain electrode metal level, active layer (such as the active layer 7 of photosensitive TFT4 switchs the active layer 8 of TFT 5) on layer 3, gate insulator
Layer 9, gate electrode (such as the gate electrode 43 of photosensitive TFT4 switchs the gate electrode 53 of TFT 5) and passivation layer 10, photosensitive TFT 4 sets
The top of transparent area 21 is placed in, just to transparent area 21, source-drain electrode metal level includes source electrode and leakage to the channel region of photosensitive TFT 4
Electrode (such as the drain electrode 41 and source electrode 42 of photosensitive TFT 4 switchs the drain electrode 51 and source electrode 52 of TFT 5), photosensitive TFT
4 source electrode 42 is electrically connected with the drain electrode 51 of switch TFT 5.It should be noted that in order that simplifying the OLED pixel structure
Structure, can make photosensitive TFT 4 source electrode 42 and switch TFT 5 drain electrode 51 share an electrode, it is as shown in Figure 2
Electrode 6 in OLED pixel structure, the reference in Fig. 2 has identical meanings with Fig. 1.Meanwhile, in order to not affect ultraviolet light
Pass through, gate insulator 9 can be prepared using SiO2.
It is formed at the anode 12, pixel on passivation layer 10 and defines layer 13, organic luminous layer 14 and transparent cathode 15, anode
12 are electrically connected by via with the source electrode 52 of switch TFT 5.In order to avoid the organic luminous layer 14 of OLED pixel structure is sent out
Impact of the light for going out to photosensitive TFT 4 and by the incident ultraviolet light in the direction of transparent anode 12 to photosensitive TFT 4 to photosensitive
The impact of TFT 4, anode 12 can adopt the metal material to ultraviolet light high reflection or composite film to prepare.Preferably, anode
12 material is silver or for the composite film of ITO- silver-ITO.
Photosensitive TFT 4 is turned on after the ultraviolet light by the incidence of transparent area 21 is received, and the source electrode 42 of photosensitive TFT 4 is to opening
The drain electrode 51 for closing TFT 5 provides the signal of telecommunication；Anode 12 is electrically connected by via with the source electrode 52 of switch TFT 5, photosensitive TFT
4 signal of telecommunication Jing switch TFT 5 for after switch receiving the source electrode 41 of photosensitive TFT 4 are provided to anode 12, so that organic
Luminescent layer 14 lights.
In the embodiment of the present invention, the photosensitive TFT 4 of OLED pixel structure, its channel region correspondence transparent area 21 and reception by
The outside ultraviolet light that transparent area 21 is passed through, because the source electrode 42 of photosensitive TFT 4 is connected with the drain electrode 51 of switch TFT 5, because
This photosensitive TFT 4 can make the organic luminous layer 14 of switch TFT5 control OLED pixel structures carry out sending out after ultraviolet light is detected
Light, so as to detection and display to outside ultraviolet light.
Preferably, photosensitive TFT and switch TFT 5 are N-type metal-oxide TFT.In the present embodiment, using N-type metal oxygen
Compound TFT, to realize detections of the photosensitive TFT to ultraviolet light.
Preferably, OLED pixel structure also includes the flatness layer 11 being formed between passivation layer 10 and anode 12.Flatness layer
11 can provide flatter surface, be conducive to the preparation of OLED pixel unit.
Preferably, underlay substrate 1 is quartz base plate.In the embodiment of the present invention, using quartz base plate as underlay substrate 1, can
To increase the transmitance of ultraviolet light, making the loss of the ultraviolet light of transmission reduces, make OLED pixel structure to the detection of ultraviolet light more
Accurately.
Preferably, the material of light shield layer 2 is lighttight metal or Organic substance.
Preferably, the material of transparent insulating layer 3 is SiO2, and thickness is 1000-3000 angstrom.In the present embodiment, transparent insulation
Layer 3 can provide flatter surface, be conducive to the preparation of OLED pixel unit.
The embodiment of the present invention has the beneficial effect that：The photosensitive TFT of OLED pixel structure, its channel region correspondence transparent area is simultaneously
The outside ultraviolet light passed through by transparent area is received, because the source electrode of photosensitive TFT is connected with the drain electrode of switch TFT, therefore is felt
Light TFT can make the organic luminous layer of switch TFT control OLED pixel structures be lighted after ultraviolet light is detected, so as to right
The detection and display of outside ultraviolet light；Photosensitive TFT and switch TFT is identical structure and synchronous formation, therefore need not be extra
Preparation technology, reduce preparation cost；Photosensitive TFT can provide the signal of telecommunication to switch TFT after switch, therefore need not increase
PN junction and interlock circuit, the structure of array base palte is relatively easy.
The embodiment of the present invention provides a kind of ultraviolet optical detection device, including the OLED pixel structure that example offer is performed as described above.
The schematic top plan view of OLED pixel array, is wherein provided with screening on underlay substrate 1 in the ultraviolet optical detection device shown in Figure 3
Photosphere 2, light shield layer 2 has multiple transparent areas 21, the channel region and printing opacity of the photosensitive TFT (not shown) of OLED pixel unit 20
The correspondence of area 21.
The embodiment of the present invention has the beneficial effect that：The photosensitive TFT of OLED pixel structure, its channel region correspondence transparent area is simultaneously
The outside ultraviolet light passed through by transparent area is received, because the source electrode of photosensitive TFT is connected with the drain electrode of switch TFT, therefore is felt
Light TFT can make the organic luminous layer of switch TFT control OLED pixel structures be lighted after ultraviolet light is detected, so as to right
The detection and display of outside ultraviolet light；Photosensitive TFT and switch TFT is identical structure and synchronous formation, therefore need not be extra
Preparation technology, reduce preparation cost；Photosensitive TFT can provide the signal of telecommunication to switch TFT after switch, therefore need not increase
PN junction and interlock circuit, the structure of array base palte is relatively easy.
Referring to Fig. 4, the embodiment of the present invention provides a kind of preparation method of OLED pixel structure, including：
401st, a underlay substrate is provided, shading layer film is formed on underlay substrate, make light shield layer thin by patterning processes
Film forms the light shield layer for including transparent area.It should be noted that the preparation of the transparent area, is the row according to the TFT being pre-designed
Determined by column position.
402nd, transparent insulating layer, source electrode and drain electrode place layer, active layer, grid are sequentially formed on light shield layer exhausted
Edge layer, gate electrode place layer and passivation layer, so as to synchronous preparation completes photosensitive TFT and switch TFT；Wherein, photosensitive TFT is arranged at
The top of transparent area, the channel region of photosensitive TFT is just to transparent area, and the source electrode of photosensitive TFT is electric with the drain electrode of switch TFT
Connection.
403rd, planarization layer, anode, pixel are sequentially formed on passivation layer and defines layer, organic luminous layer and transparent the moon
Pole, makes anode pass through via and electrically connects with the drain electrode of switch TFT.
The embodiment of the present invention has the beneficial effect that：The photosensitive TFT of OLED pixel structure, its channel region correspondence transparent area is simultaneously
The outside ultraviolet light passed through by transparent area is received, because the source electrode of photosensitive TFT is connected with the drain electrode of switch TFT, therefore is felt
Light TFT can make the organic luminous layer of switch TFT control OLED pixel structures be lighted after ultraviolet light is detected, so as to right
The detection and display of outside ultraviolet light；Photosensitive TFT and switch TFT is identical structure and synchronous formation, therefore need not be extra
Preparation technology, reduce preparation cost；Photosensitive TFT can provide the signal of telecommunication to switch TFT after switch, therefore need not increase
PN junction and interlock circuit, the structure of array base palte is relatively easy.
Referring to Fig. 5, the embodiment of the present invention provides a kind of method of ultraviolet light detection, including：
501st, the source electrode for making photosensitive TFT connects high level signal, and the gate electrode of photosensitive TFT connects the first control signal, switch
The gate electrode of TFT connects the second control signal.
502nd, in first time period, the first control signal is high level, and the second control signal is low level, and photosensitive TFT leads
It is logical, switch TFT shut-offs.
503rd, in second time period, the first control signal is low level, and the second control signal is high level, and photosensitive TFT is closed
It is disconnected, switch TFT conductings, the incident ultraviolet light of photosensitive TFT detections transparent area, if ultraviolet light is detected photosensitive TFT turn on and incite somebody to action
The high level signal Jing switch TFT that itself drain electrode is received are supplied to the anode of OLED pixel structure, make OLED pixel structure
Organic luminous layer lights.
504th, the 3rd time period is to the end of scan, the first control signal repeat first time period and second time period when
Sequence, reset photosensitive TFT, and the second control signal is low level, turns off switch TFT.
When Fig. 6 shows OLED pixel structure and detects for ultraviolet light, the schematic diagram of photosensitive TFT and switch TFT connections, its
In photosensitive TFT be labeled as M1, switch TFT is labeled as M2, and the source electrode of M1 meets high level signal VDD, and the drain electrode of M1 connects M2's
Source electrode, the drain electrode of M2 meets the anode of OLED, the minus earth VSS of OLED.M1 grids can be made to connect the first control signal V1,
M2 grids connect the second control signal V2.Referring to Fig. 7, the control sequential figure of photosensitive TFT and switch TFT is shown, wherein：When first
Between section, the first control signal V1 be high level, the second control signal V2 be low level, M1 is conducting state, and M2 is off state,
OLED does not light；Second time period, the first control signal V1 is low level, and the second control signal V2 is high level signal, and M1 is
Off state, M2 conductings, if being not detected by ultraviolet light, OLED does not light, if detecting ultraviolet light, M1 is switched on, by high electricity
Ordinary mail VDD provides the anode to OLED, makes OLED light；The size of M1 firing currents is related to ultraviolet ray intensity, therefore
OLED luminous intensities are related to ultraviolet ray intensity.3rd time terminated to detection, and the first control signal V1 repeats first time period
With the sequential (as shown in V11 in the first control signal V1) of second time period, M1 is set to reset, the second control signal V2 is low electricity
It is flat, turn off M2.
The embodiment of the present invention has the beneficial effect that：The channel region correspondence transparent area of photosensitive TFT is simultaneously received saturating by transparent area
The outside ultraviolet light crossed, because the source electrode of photosensitive TFT is connected with the drain electrode of switch TFT, therefore photosensitive TFT is detecting purple
The organic luminous layer that switch TFT control OLED pixel structures can be made after outer light is lighted, so as to the inspection to outside ultraviolet light
Survey and show.
Obviously, those skilled in the art can carry out the essence of various changes and modification without deviating from the present invention to the present invention
God and scope.So, if these modifications of the present invention and modification belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising these changes and modification.
Claims (11)
1. a kind of Organic Light Emitting Diode OLED pixel structure, it is characterised in that include：
Underlay substrate；
The light shield layer and transparent insulating layer being sequentially formed on the underlay substrate, the light shield layer has transparent area；
The photosensitive TFT and switch TFT, the photosensitive TFT being formed on the transparent insulating layer is arranged at the transparent area
Top, the channel region of the photosensitive TFT is just to the transparent area；Wherein, the photosensitive TFT and the switch TFT include according to
Secondary source-drain electrode metal level, active layer, gate insulator, gate electrode and the passivation layer being formed on the transparent insulating layer, it is described
Source-drain electrode metal level includes source electrode and drain electrode, and the source electrode of the photosensitive TFT is electrically connected with the drain electrode of the switch TFT
Connect；
It is formed at the anode on the passivation layer, pixel and defines layer, organic luminous layer and transparent cathode, the anode passed through
Hole electrically connects with the source electrode of the switch TFT.
2. OLED pixel structure as claimed in claim 1, it is characterised in that the OLED pixel structure also includes being arranged at institute
State the planarization layer between passivation layer and the anode.
3. OLED pixel structure as claimed in claim 1 or 2, it is characterised in that the photosensitive TFT and switch TFT is N
Type metal-oxide TFT.
4. OLED pixel structure as claimed in claim 1 or 2, it is characterised in that the underlay substrate is quartz base plate.
5. OLED pixel structure as claimed in claim 1 or 2, it is characterised in that the material of the light shield layer is lighttight
Metal or Organic substance.
6. OLED pixel structure as claimed in claim 1 or 2, it is characterised in that the material of the transparent insulating layer is SiO2,
Thickness is 1000-3000 angstrom.
7. OLED pixel structure as claimed in claim 1 or 2, it is characterised in that the material of the anode is high to ultraviolet light
The metal material or composite film of reflection.
8. a kind of ultraviolet optical detection device, it is characterised in that including at least one as described in any one of claim 1 to 7
OLED pixel structure.
9. a kind of preparation method of OLED pixel structure, it is characterised in that include：
One underlay substrate is provided, shading layer film is formed on the underlay substrate, by patterning processes shading layer film shape is made
Into the light shield layer including transparent area；
Transparent insulating layer, source-drain electrode metal level, active layer, gate insulator, gate electrode are sequentially formed on the light shield layer
And passivation layer, so as to synchronous preparation completes photosensitive TFT and switch TFT；Wherein, the photosensitive TFT is arranged at the transparent area
Top, just to the transparent area, the source-drain electrode metal level includes source electrode and drain electrode to the channel region of the photosensitive TFT,
The source electrode of the photosensitive TFT is electrically connected with the drain electrode of the switch TFT；
Anode, pixel are sequentially formed on the passivation layer and defines layer, organic luminous layer and transparent cathode, lead to the anode
Via is electrically connected with the source electrode of the switch TFT.
10. method as claimed in claim 9, it is characterised in that be additionally included between the passivation layer and the anode and formed
Planarization layer.
11. a kind of ultraviolet light detection methods of ultraviolet optical detection device as claimed in claim 8, it is characterised in that include：
The source electrode for making photosensitive TFT connects high level signal, and the gate electrode of the photosensitive TFT connects the first control signal, switchs TFT's
Gate electrode connects the second control signal；
In first time period, first control signal is high level, and second control signal is low level, described photosensitive
TFT is turned on, the switch TFT shut-offs；
In second time period, first control signal is low level, and second control signal is high level, described photosensitive
TFT is turned off, the switch TFT conductings, the incident ultraviolet light of the photosensitive TFT detections transparent area, the institute if ultraviolet light is detected
State photosensitive TFT conductings and be supplied to OLED pixel structure by TFT is switched described in the high level signal Jing of itself drain electrode reception
Anode, the organic luminous layer for making OLED pixel structure lights；
3rd time period, first control signal repeated the sequential of first time period and second time period, multiple to the end of scan
The position photosensitive TFT, second control signal is low level, turns off the switch TFT.
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