CN105609028B - 假压测试方法与装置 - Google Patents

假压测试方法与装置 Download PDF

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CN105609028B
CN105609028B CN201610168070.7A CN201610168070A CN105609028B CN 105609028 B CN105609028 B CN 105609028B CN 201610168070 A CN201610168070 A CN 201610168070A CN 105609028 B CN105609028 B CN 105609028B
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CN105609028A (zh
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熊彬
王英琪
黄俊宏
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to PCT/CN2016/089627 priority patent/WO2017161781A1/zh
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Abstract

本发明揭露一种假压测试(Cell Test)方法，用于液晶或OLED显示面板台阶处的扇出区，所述方法包括以下步骤：当半成品接合玻璃软性电路板(FOG)端长度大于一临界值时，在所述半成品板端额外加入进行假压测试所需的一假压测试板；在所述假压测试板处放置对位标记；以及使用一电荷耦合装置(charge coupled device)来进行一假压对位程序。当半成品FOG端长度小于一临界值时，所述假压测试是通过软性电路板(FPC)的部分接脚来传输信号，并通过金属氧化半导体(MOS)来管控制信号的导通。

Description

假压测试方法与装置
技术领域
本发明提出一假压测试方法与装置，特别是用于液晶或OLED显示面板的假压测试方法与装置。
背景技术
在液晶显示器制造过程中，需要不断地监测产品的质量问题，从监测的过程中，及时的筛选出不合格的产品，以保证精确地生产。从监测的结果中，能了解生产过程中出现问题或存在风险的环节。目前在绑定显示驱动集成电路(Display Driver IC)和触控控制器集成电路(Touch Controller IC)之前，需要对面板进行假压测试(即Cell Test)，只有画面显示效果正常的面板才会流到下一阶段进行显示驱动IC(Display Driver IntegratedCircuit,DDIC)键接动作，完成数字诊断集成电路键接之后，还需要进行模块整体显示效果和其他性能测试，直到完全符合质量规范和客户要求。
目前液晶显示面板台阶处的切割都是直角切割，那么在薄膜晶体管台阶区域不仅可以放置扇出区(Fanout)的走线，还可以放置用来做假压测试的面板，如图1所示，其中包括测试板10与驱动集成电路11。配合治具输送相应的信号，这样就可以在没有显示驱动IC的情况下，使得面板能够显示部分图案(Pattern)，从而阻止不良产品流到下一个阶段。随着技术和工艺不断地提高，消费者对终端产品的外形尺寸，尤其是轻薄方面特别关注。这样就使得面板大厂不断地提高研磨工艺，从而尽可能的减薄玻璃厚度，这样就会造成玻璃的强度下降；另外，现在的背光基本都是塑料件，而且周围基本和面板边缘平齐，这样就使得玻璃没有任何缓冲保护。更为重要的是由于绑定集成(Bonding)IC和软性电路板(FPC)工艺需求，偏光片也无法贴覆整个薄膜晶体管面板，这样薄膜晶体管面板和覆晶薄膜(Chip onFilm,CF)面板贴合的台阶处，即绑定集成IC和软性电路板(FPC)，线路阵列(wire onarray,WOA) 走线，以及扇出(Fanout)区域就非常薄弱。随着触控技术的发展，越来越多的面板厂商不断开发新技术，争取把触控集成在自家生产的模组里。一方面可以提高产品的集成度，提高客户体验，另一方面可以节约成本，包括生产制造成本，包装运输成本。上述客观事实的存在，使得现在部分面板厂商在薄膜晶体管台阶处使用斜切割处理；另外，随着面板集成触控功能，那我们也需要测试其品质。为此，本发明我们旨在改善薄膜晶体管台阶处扇出区域走线密集而导致假压测试板(Cell Test Pad)无法摆放造成的影响。
发明内容
为了解决上述假压测试板无法摆放的问题，本发明一实施例提出了一种假压测试(Cell Test)方法，所述方法包括以下步骤：当半成品接合玻璃软性电路板(FOG)端长度大于一临界值时，在所述半成品板FOG端额外加入进行假压测试所需的一假压测试板；在所述假压测试板处放置对位标记；以及使用一电荷耦合装置(charge coupled device)来进行一假压对位程序。当半成品 FOG端长度小于一临界值时，所述假压测试是通过软性电路板(FPC)的部分接脚的复用处理来传输信号，并通过金属氧化半导体(MOS)来管控制信号的导通。
较佳地，所述复用处理包括以下步骤：在所述电路板(FPC)的部分接脚多拉出一条走线；以及在所述走线 放置一由所述金属氧化半导体(MOS)所制成的薄膜晶体管并利用所述薄膜晶体管来管控制信号的导通。
较佳地，所述薄膜晶体管的一栅极接至一薄膜晶体管导通电压(VGH)与一薄膜晶体管关断电压(VGL)的其中一个，所述薄膜晶体管的一源极与一漏极分别连接测试半成品所需的假压测试号和所述软性电路板的部分引脚。
较佳地，所述薄膜晶体管的一栅极在进行假压测试时是被导通的，不进行假压测试时是被关断的。
本发明解决假压测试板摆放问题，有利于产品质量管控，还可以实现自动面板检验。
为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例并配合附图做详细说明。
附图说明
图1是现有的假压测试板放置示意图；
图2是现有薄膜晶体管斜切割的示意图；
图3是依据本发明一实施例对半成品板进行复用的示意图；
图4是图3的假压测试方法流程图；以及
图5是依据本发明所述实施例的复用方法流程图。
具体实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
请参照图2与图3，图2是现有薄膜晶体管斜切割的示意图，图3是依据本发明一实施例对半成品板进行复用的示意图。如图2所示，薄膜晶体管面板做不规则切割时，由于区域20面积受限，导致假压测试板(Cell Test Pad) 的摆放受到制约。也就是说，当对薄膜晶体管玻璃21进行斜切割处理时，原本放置假压测试板的区域20就会大幅度减小。本发明针对上述制约因素，提出利用半成品板之接合玻璃软性电路板(FOG,FPC on Glass)部分引脚共享的方式，配合软性电路板22假压测试的方法对面板(Cell)进行品质检测。
如图3所示，在半成品FOG端长度允许的情况下，可以在半成品FOG 端额外加入假压测试所需的测试板30。为了能使用电荷耦合装置进行对位，需要在新增加的假压测试板30放置对位标记32，以便能更加精准的进行假压对位处理。另外，在半成品FOG端长度不允许的情况下，可以复用软性电路板22部分的引脚32。具体的做法是在原来的对应的板多拉出一条走线 33連接软性电路板22的引脚32，然后在这条走线33上放置一个薄膜晶体管34(N型薄膜晶体管或者P型薄膜晶体管都可以)，其中所述薄膜晶体管 34的一栅极接导通电压VGH或者关断电压VGL，所述薄膜晶体管34的源极和漏极分别接测试半成品所需的假压测试号S_FOG和软性电路板22的引脚32。所述薄膜晶体管34系由金属氧化半导体(MOS)所制成。当要进行假压测试时，让所述栅极导通，而此时没有键接集成电路(IC)，所以假压测试的信号不会输入到集成电路。当测试完成后，把栅极关断，测试这条路径就不导通。键接集成电路后对应半成品板输入正常所需的信号即可。
请参照图4，图4是图3的假压测试方法流程图，所述方法包括以下步骤：
S400：判断一半成品板FOG端的长度是否小于一临界值；如果小于，则进行S404，否则进行S401；
S401：在所述半成品板FOG端额外加入进行假压测试所需的一假压测试板；
S402：在所述假压测试板处放置对位标记；
S403：使用一电荷耦合装置(charge coupled device)来进行一假压对位程序；
S404：对所述連接软性电路板上部分的引脚板实施一复用处理。
以上所述的临界值是依据受检测面板的大小而定，一般来说是与面板面积大小成正比。
请参照图5，图5是依据本发明所述实施例的复用方法流程图，所述方法包括以下步骤：
S500：在所述連接软性电路板的引脚上多拉出一条走线；
S501：在所述走线 放置一薄膜晶体管并利用所述薄膜晶体管来控制所述假压测试讯号是否传送至所述假压测试板。
本发明解决假压测试板摆放问题，有利于产品质量管控，还可以实现自动面板检验。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (8)

1.一种假压测试方法，其特征在于，包括以下步骤：
当半成品接合玻璃软性电路板端长度大于一临界值时，在所述半成品接合玻璃软性电路板端额外加入进行假压测试所需的一假压测试板；
在所述假压测试板处放置对位标记；以及
使用一电荷耦合装置来进行一假压对位程序；
当半成品接合玻璃软性电路板端长度小于一临界值时，所述假压测试是通过软性电路板的部分接脚的复用处理来传输信号，并通过金属氧化半导体来管控制信号的导通。
2.如权利要求1所述的假压测试方法，其特征在于，所述复用处理包括以下步骤：
在所述软性电路板的部分接脚多拉出一条走线；以及
在所述走线放置一由所述金属氧化半导体所制成的薄膜晶体管并利用所述薄膜晶体管来管控制信号的导通。
3.如权利要求2所述的假压测试方法，其特征在于，所述薄膜晶体管的一栅极接至一薄膜晶体管导通电压与一薄膜晶体管关断电压的其中一个，所述薄膜晶体管的一源极与一漏极分别连接测试半成品所需的假压测试号和所述软性电路板的部分引脚。
4.如权利要求2所述的假压测试方法，其特征在于，所述薄膜晶体管的一栅极在进行假压测试时是被导通的，不进行假压测试时是被关断的。
5.一种假压测试装置，其特征在于，包括：
一半成品板；一软性电路板，用于进行假压测试；
以及
一电荷耦合装置，用于进行一假压对位程序；
其中，所述假压测试是通过软性电路板的部分接脚的复用处理来传输信号，并通过金属氧化半导体来管控制信号的导通。
6.如权利要求5所述的假压测试装置，其特征在于，进行复用处理之后的假压测试装置包括：
一条走线，被拉出于所述软性电路板的部分接脚；以及
一薄膜晶体管，由所述金属氧化半导体所制成，被放置于所述走线，用于管控制信号的导通。
7.如权利要求6所述的假压测试装置，其特征在于，所述薄膜晶体管的一栅极接至一薄膜晶体管导通电压与一薄膜晶体管关断电压的其中一个，所述薄膜晶体管的一源极与一漏极分别连接测试半成品所需的假压测试号和所述软性电路板的部分引脚。
8.如权利要求6所述的假压测试装置，其特征在于，所述薄膜晶体管的一栅极在进行假压测试时是被导通的，不进行假压测试时是被关断的。
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