CN105607303B - Right-angle output magneto-optical modulator based on photonic crystal T-shaped waveguide - Google Patents
Right-angle output magneto-optical modulator based on photonic crystal T-shaped waveguide Download PDFInfo
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/09—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect
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- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
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Abstract
The invention discloses a right-angle output magneto-optical modulator based on a photonic crystal T-shaped waveguide, which comprises a photonic crystal T-shaped waveguide with a TE forbidden band; the modulator also comprises an input end (1), two output ends (2, 3), a background silicon medium column (4), an isosceles right triangle defect medium column (5) and a defect medium column (6), and also comprises an electromagnet (7) for providing a bias magnetic field, a modulation current source (9) and a modulation signal (10); the left end of the photonic crystal T-shaped waveguide is an input end (1), and output ends (2 and 3) are respectively positioned at the right end and the upper end of the photonic crystal T-shaped waveguide; the defective dielectric column (6) is positioned at the central intersection of the T-shaped waveguide; 4 isosceles right triangle defect medium columns (5) are respectively positioned at four crossed corners of the T-shaped waveguide; the photonic crystal waveguide inputs TE carrier light from a port (1) and outputs amplitude-modulated light from a port (3). The invention can efficiently realize the right-angle output magneto-optical modulator of the photonic crystal T-shaped waveguide.
Description
Technical Field
The invention relates to the field of modulators, in particular to a photonic crystal T-shaped waveguide-based right-angle output magneto-optical modulator.
Background
The conventional optical modulator generally utilizes the electro-optic effect of a crystal to modulate light, and needs a microwave modulation signal, an electro-optic crystal and an interference structure, such as a mach-zehnder interference structure. Because of the limitation of the electro-optic coefficient of the electro-optic crystal, the electro-optic crystal with longer geometric dimension needs to be adopted, so that the optical modulator has larger volume, can only be used in the traditional optical device and cannot be integrated into an optical chip. Optical modulators are key devices used to control light intensity during light emission, transmission, and reception of the overall optical communication, and are also one of the most important integrated optical devices.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a photonic crystal T-shaped waveguide right-angle output magneto-optical modulator which is efficient, short-range and convenient to integrate.
The purpose of the invention is realized by the following technical scheme.
The invention relates to a right-angle output magneto-optical modulator based on a photonic crystal T-shaped waveguide, which comprises a photonic crystal T-shaped waveguide with a TE forbidden band; the modulator also comprises an input end 1, an output end 2, an output end 3, a background silicon medium column 4, an isosceles right triangle defect medium column 5 and a defect medium column 6; the left end of the photonic crystal T-shaped waveguide is an input end 1, and the output end 2 and the output end 3 are respectively positioned at the right end and the upper end of the photonic crystal T-shaped waveguide; the defective dielectric column 6 is positioned at the central intersection of the T-shaped waveguide; the 4 isosceles right triangle defect medium columns 5 are respectively positioned at four crossed corners of the T-shaped waveguide; the photonic crystal waveguide inputs TE carrier light from a port 1 and outputs amplitude-modulated light from a port 2 and a port 3.
The modulator further comprises an electromagnet coil 7, a lead 8, a rectangular pulse power supply 9 and an electronic switch 10, wherein the lead 8 is connected with the electromagnet through the rectangular pulse power supply 9.
The modulator is an electromagnet that provides a bias magnetic field, which is loaded with a modulation signal.
The photonic crystal is a two-dimensional tetragonal lattice photonic crystal.
The photonic crystal adopts a square silicon medium column air background structure.
The T-shaped waveguide is a structure formed by removing a middle transverse row and a middle vertical row of dielectric columns from the photonic crystal.
And deleting one angle from each of the 4 background medium columns at the crossed corners of the T-shaped waveguide to form isosceles right-angle triangular defect medium columns, wherein the isosceles right-angle triangular defect medium columns 5 are triangular columns.
The background silicon dielectric column 4 is square.
The square silicon medium column rotates anticlockwise by 41 degrees along the direction of the axis z of the medium column.
The defect medium column 6 is a ferrite square column, the shape of the defect medium column is square, the magnetic conductivity of the ferrite square column is anisotropic, and the defect medium column is controlled by a bias magnetic field, and the direction of the bias magnetic field is along the axial direction of the ferrite square column.
The port 2 is arranged at right angle to the port 3, and the port 3 is a modulation output port.
Compared with the prior art, the invention has the following advantages:
(1) the structure has small volume, fast time response and high optical transmission efficiency, and is suitable for large-scale optical path integration;
(2) the invention can realize the function of the right-angle output magneto-optical modulator of the photonic crystal T-shaped waveguide through one point defect in a short distance, and is convenient for integration and high-efficiency;
(3) the principle of the invention can apply the property that the photonic crystal can be scaled in equal proportion under the condition of not considering dispersion or neglecting dispersion, and can realize the function of the right-angle output magneto-optical modulator of the photonic crystal T-shaped waveguide with different wavelengths by a method of changing the lattice constant in equal proportion.
Drawings
Fig. 1 is a schematic diagram of a structure of a photonic crystal T-waveguide based orthogonal output magneto-optical modulator of the present invention.
In the figure: input end 1, output end 2, output end 3, background silicon medium column 4, isosceles right triangle defect medium column 5, defect medium column 6
Fig. 2 is another structural schematic diagram of a photonic crystal T-waveguide based orthogonal output magneto-optical modulator of the present invention.
In the figure: electromagnet coil 7, wire 8, rectangular pulse power supply 9 and electronic switch 10
Fig. 3 is a structural parameter distribution diagram of the photonic crystal T-shaped waveguide-based orthogonal output magneto-optical modulator of the present invention.
Fig. 4 is a sine waveform diagram of the bias magnetic field of the photonic crystal T-shaped waveguide based right angle output magneto-optical modulator of the present invention.
FIG. 5 is a graph of the relationship of the values of the magnetic permeability u, k when the photonic crystal T-shaped waveguide based orthogonal output magneto-optical modulator changes with the bias magnetic field in one period.
Fig. 6 is a modulation plot of a photonic crystal T-waveguide based right angle output magneto-optical modulator of the present invention.
Fig. 7(a) is a modulation graph of the right angle output magneto-optical modulator of the photonic crystal T-type waveguide in embodiment 1.
Fig. 7(b) is a modulation sensitivity diagram of the right angle output magneto-optical modulator of the photonic crystal T-type waveguide in embodiment 1.
Fig. 8(a) is a modulation graph of the right angle output magneto-optical modulator of the photonic crystal T-type waveguide in embodiment 2.
Fig. 8(b) is a modulation sensitivity diagram of the right angle output magneto-optical modulator of the photonic crystal T-type waveguide in embodiment 2.
Fig. 9(a) is a modulation graph of the right angle output magneto-optical modulator of the photonic crystal T-type waveguide in embodiment 3.
Fig. 9(b) is a modulation sensitivity diagram of the right angle output magneto-optical modulator of the photonic crystal T-type waveguide in embodiment 3.
Fig. 10(a) and (b) are schematic diagrams of optical field distribution of the right angle output magneto-optical modulator of the photonic crystal T-type waveguide of the present invention.
Detailed Description
As shown in fig. 1, the right-angle output magneto-optical modulator of the photonic crystal T-shaped waveguide according to the present invention has a schematic structure in which a bias circuit and a bias coil are deleted, and includes a photonic crystal T-shaped waveguide having a TE bandgap, an input terminal 1, an output terminal 2, and an output terminal 3, a background silicon dielectric pillar 4, an isosceles right-angled triangular defect dielectric pillar 5, and a defect dielectric pillar 6; the initial signal light of the device is incident from a left port 1, a port 2 and a port 3 output light waves, the ports 2 and 3 are respectively positioned at the right end and the upper end of a T-shaped waveguide of the photonic crystal, the port 2 and the port 3 are in right-angle layout, and the port 3 is a modulation output port. The shape of the background silicon medium column 4 is square, the direction of the optical axis is vertical to the paper surface and faces outwards, the isosceles right triangle defect medium column 5 is, one corner of each of 4 background medium columns at the crossed corners of the T-shaped waveguide is deleted to form the isosceles right triangle defect medium column, the isosceles right triangle defect medium column 5 is in a triangular column shape, the 4 isosceles right triangle defect medium columns 5 are respectively positioned at the four crossed corners of the T-shaped waveguide, the direction of the optical axis is the same as that of the background medium column, the defect medium column 6 is square and positioned at the central crossed position of the T-shaped waveguide, and the direction of the optical axis is vertical to the paper surface and faces outwards; the ferrite square column has anisotropic magnetic permeability and is controlled by a bias magnetic field, and the direction of the bias magnetic field is along the axial direction of the ferrite square column. As shown in fig. 2, the right-angle output magneto-optical modulator of the photonic crystal T-type waveguide of the present invention has a schematic structural diagram after including a bias circuit and a bias coil, and includes an electromagnet coil 7, a wire 8, a rectangular pulse power supply 9 and an electronic switch 10, wherein the wire 8 is connected to an electromagnet through the rectangular pulse power supply 9; the modulator of the invention uses a cartesian rectangular coordinate system as shown in fig. 1 and 3: the positive direction of the x axis is horizontal to the right; the positive direction of the y axis is vertical and upward; the positive z-axis direction is out of the plane of the paper.
As shown in fig. 3, the relevant parameters of the device are:
d1either a (lattice constant)
d20.3a (square silicon column side length)
d30.2217a (Square defect medium column side length)
d40.3a (isosceles right triangle defect column waist length)
d51.2997a (distance from the hypotenuse of the defect post to the center of the defect post in square shape)
d61.577a (waveguide width and length)
The photonic crystal is a tetragonal lattice, the lattice constant is a, the side length of a dielectric column is 0.3a, when the square silicon dielectric column of the photonic crystal rotates anticlockwise by 41 degrees in the axis direction (z axis) of the reference dielectric column, a plane wave expansion method is adopted to obtain a TE forbidden band structure in the photonic crystal, the TE forbidden band of the photonic crystal is 0.3150-0.4548 (omega a/2 pi c), light waves of any frequency in the middle of the photonic crystal are limited in a waveguide, and after the square lattice dielectric column rotates anticlockwise by 41 degrees in the axis direction (z axis) of the reference dielectric column, a wider forbidden band range is obtained.
The silicon dielectric waveguide used in the present invention requires the deletion of one row and one column of dielectric pillars to form a T-shaped waveguide. The waveguide plane is perpendicular to the axis of the dielectric pillar in the photonic crystal. By introducing a ferrite square column (square defect dielectric column 6) at the intersection of the T-shaped waveguide, the side length of the ferrite square column is 0.2217a, and the distance from the hypotenuse surface of 4 isosceles right triangle defect dielectric columns 5 to the axis of the ferrite square column (square defect dielectric column 6) is 1.2997 a. The optical axis of the ferrite square column is consistent with the optical axis direction of the background medium column.
The description of the principles of the present invention is explained primarily in relation to magneto-optical media. Ferrite is a material with magnetic anisotropy, and the magnetic anisotropy of ferrite is induced by an external DC bias magnetic field. The magnetic field causes the magnetic dipoles in the ferrite to align in the same direction, thereby creating a resultant magnetic dipole moment and causing the magnetic dipoles to precess at a frequency controlled by the strength of the biasing magnetic field. The interaction with an external microwave signal can be controlled by adjusting the intensity of the bias magnetic field, so that the right-angle output magneto-optical modulator of the photonic crystal T-shaped waveguide is realized. Under the action of a bias magnetic field, the permeability tensor of the ferrite shows asymmetry, wherein the permeability [ mu ] of the ferrite tensor is as follows:
the elements of the permeability tensor are given by the following equation:
ω0＝μ0γH0 (2)
ωm＝μ0γMs (3)
ω＝2πf (4)
wherein, mu0Is magnetic permeability in vacuum, gamma is gyromagnetic ratio, H0For application of a magnetic field, MSSaturation magnetization, operating frequency, p ═ k/μ normalized magnetization frequency, also called separation factorThe parameters μ and k determine the different ferrite materials, a material with this form of permeability tensor is called gyromagnetic, and H, assuming the direction of bias is opposite0And MSThe sign will change so the direction of rotation will be opposite.
The bias magnetic field is generated by a bias electromagnet, and bias current is loaded in the bias electromagnet and is a modulation signal.
The magnitude of the bias magnetic field H is adjusted by the change of an external magnetic field according to sine wave shape, so that the magnetic conductivity is changed, the intensity of the light output by the ports 2 and 3 is changed, and the modulation of the optical signal is realized.
Setting bias magnetic field H ═ H0+H1sin (nt), t epsilon (0,2 pi/n), and the value of n can be determined according to requirements. H changes according to a sine waveform rule, the sine waveform is equally divided into 20 sections in one period (called as a modulation period), 21 points are totally arranged, the magnetic permeability value is calculated according to the magnetic field value of each point, and the optical wave electric field amplitude of the channels of the ports 2 and 3 is calculated.
Let parameter d3＝0.2217a，d5＝1.2997a，Ms＝2.39×105[A/m]. When the normalized optical wave frequency ω a/2 pi c is 0.4121, referring to fig. 6, a modulation curve, i.e., a modulation curve graph, in which the electric field amplitude of the optical wave of the port 2 and the port 3 changes with the modulation magnetic field in one period is obtained through simulation calculation.
When the defects are introduced into the silicon dielectric column array waveguide, H is the magnetic field H0+H1At the time, the incident signal port is located at the position of the left port 1 shown in fig. 1, and the TE carrier optical signal is located at the port 1. The carrier optical signals are propagated in the waveguide formed by the dielectric column array of the silicon dielectric column 4, after the TE carrier optical signals reach the defect position of the defect dielectric column 6, all the TE carrier optical signals pass through, finally, the TE carrier optical signals are output at the position of the output port 3, and almost no TE carrier optical signals are output at the output position of the port 2. In a magnetic field H ═ H0-H1At the time, the incident signal port is located at the position of the left port 1 shown in fig. 1, and the TE carrier optical signal is located at the port 1. The carrier optical signal propagates in a waveguide formed by an array of dielectric pillars of silicon dielectric pillars 4, TAfter the E carrier optical signal reaches the defect position of the defect dielectric column 6, the TE carrier optical signal will all pass through, and finally the TE carrier optical signal will be output at the position of the output port 2, and the TE carrier optical signal will hardly be output at the position of the output port 3.
Therefore, the port 3 is used as a modulation output port, and the electric field amplitude of the optical wave of the port 3 channel at 21H values in one modulation period, i.e., the curve of the electric field amplitude of the passing optical wave changing with the modulation magnetic field, is used as a modulation curve, see fig. 8 (a). From the modulation curve, the modulation sensitivity, which is the derivative of the amplitude of the optical wave electric field in the channel to the amplitude of the modulation magnetic field, i.e. the slope of the modulation curve, can be found, see fig. 8 (b). The modulation depth can also be determined from the modulation curve, and is 2 (maximum electric field amplitude-minimum electric field amplitude)/(maximum electric field amplitude + minimum electric field amplitude).
As can be seen from fig. 8(a), the modulation depth is 0.39356. If a sinusoidal bias magnetic field is input to the modulation curve, the amplitude of the electric field at the port 3 changes approximately sinusoidally around the static operating point in the linear range, which shows that the study has a more ideal modulation effect.
As can be seen from fig. 8(b), the modulation sensitivity was 0.00181.
The choice of lattice constant and operating wavelength can be determined in the following manner. By the formula
Normalized forbidden band frequency range of tetragonal silicon structure therein and in the present invention
fnormCalculating the corresponding forbidden band wavelength range from 0.3150 to 0.4548 (8) as follows:
λ＝2.1987a～3.1746a (9)
it follows that a value of λ satisfying a wavelength range in equal proportion thereto can be obtained by changing the value of the lattice constant a without considering the dispersion or the change of the material dispersion to be small. The operating wavelength can be tuned by the dielectric column-to-column lattice constant without regard to dispersion or with negligible dispersion.
The invention can realize the TE carrier wave light wave signal modulator with short distance and high efficiency, and has great practical value. The invention has high on-off contrast ratio and wider working wavelength range, can allow the pulse with certain spectrum width, or Gaussian light, or light with different wavelengths to work, or light with a plurality of wavelengths to work simultaneously, and has practical significance.
Example 1
In the embodiment, under the condition of not considering dispersion or little change of material dispersion, the function of the right-angle output magneto-optical modulator of the photonic crystal T-shaped waveguide with different wavelengths can be realized by a method of changing the lattice constant in an equal proportion. Let parameter a be 6.1772 × 10-3[m]，d2＝0.3a，d3＝0.2217a，d5＝1.2997a，Ms＝2.39×105[A/m]，H0＝4.79925×105[A/m]，H1＝225[A/m]. The normalized optical wave frequency ω a/2 pi c is 0.4121, and other parameters are not changed, so that the normalized optical wave frequency ω a/2 pi c corresponds to the optical wave carrier of 20 GHz. Referring to fig. 7(a), a modulation curve, i.e., a modulation curve graph, in which the electric field amplitude of the optical wave of the port 3 channel changes with the modulation magnetic field in one period is obtained through simulation calculation. Referring to fig. 7(b), the slope of the modulation curve in the port 3 channel over one cycle, i.e., the modulation sensitivity map. This structure has a more ideal modulator function.
Example 2
In the embodiment, under the condition of not considering dispersion or little change of material dispersion, the function of the right-angle output magneto-optical modulator of the photonic crystal T-shaped waveguide with different wavelengths can be realized by a method of changing the lattice constant in an equal proportion. Let parameter a be 4.1181 × 10-3[m]，d2＝0.3a，d3＝0.2217a，d5＝1.2997a，Ms＝2.39×105[A/m]，H0＝7.5696×105[A/m]，H1＝135[A/m]. The normalized optical wave frequency ω a/2 pi c is 0.4121, and other parameters are not changed, so that the normalized optical wave frequency ω a/2 pi c corresponds to the optical wave carrier of 30 GHz. Referring to fig. 8(a), the modulation of the electric field amplitude of the optical wave of the port 3 channel with the modulation magnetic field variation in one period is obtained through simulation calculationAnd (5) making a curve, namely a modulation curve graph. Referring to fig. 8(b), the slope of the modulation curve in the port 3 channel over one cycle, i.e., the modulation sensitivity map. This structure has a more ideal modulator function.
Example 3
In the embodiment, under the condition of not considering dispersion or little change of material dispersion, the function of the right-angle output magneto-optical modulator of the photonic crystal T-shaped waveguide with different wavelengths can be realized by a method of changing the lattice constant in an equal proportion. Let parameter a be 3.0886 × 10-3[m]，d2＝0.3a，d3＝0.2217a，d5＝1.2997a，Ms＝2.39×105[A/m]，H0＝10.38505×105[A/m]，H1＝135[A/m]. The normalized optical wave frequency ω a/2 pi c is 0.4121, and other parameters are not changed, so that the normalized optical wave frequency ω a/2 pi c corresponds to the optical wave carrier of 40 GHz. Referring to fig. 9(a), a modulation curve, i.e., a modulation curve graph, in which the electric field amplitude of the optical wave of the port 3 channel varies with the modulation magnetic field in one period is obtained through simulation calculation. Referring to fig. 9(b), the slope of the modulation curve in the port 3 channel over one cycle, i.e., the modulation sensitivity map. This structure has a more ideal modulator function.
As can be seen from the light field simulation diagram obtained by performing calculation with finite element software COMSOL, referring to fig. 10(a) and 10(b), the TE carrier light is modulated and propagated to the port 2 and the port 3.
The invention described above is subject to modifications both in the specific embodiments and in the field of application and should not be understood as being limited thereto.
Claims (13)
1. A right-angle output magneto-optical modulator based on a photonic crystal T-shaped waveguide is characterized in that the photonic crystal T-shaped waveguide with a TE forbidden band comprises a TE carrier light input end, two signal output ends, at least one background silicon medium column, at least one first defect medium column and a second defect medium column; the modulator also comprises an electromagnet, a modulation current source and a modulation signal; the left end of the photonic crystal T-shaped waveguide is a TE carrier wave light input end, the right end of the photonic crystal T-shaped waveguide is a first signal output end, the upper end of the photonic crystal T-shaped waveguide is a second signal output end, and a second defect medium column is arranged at the central intersection; four crossed corners of the photonic crystal T-shaped waveguide are provided with first defect medium columns; the first defect medium column is an isosceles right triangle defect medium column; the electromagnet and the modulation current source generate a sinusoidal bias magnetic field, and the TE carrier light at the TE carrier light input end is modulated and transmitted to the first signal output end and the second signal output end through the change of the electric field amplitude of the light wave at the signal output end along with the modulated sinusoidal bias magnetic field in a modulation period.
2. The photonic crystal T-waveguide based right angle output magneto-optical modulator according to claim 1, wherein: the modulator further comprises a wire.
3. The photonic crystal T-waveguide based right angle output magneto-optical modulator according to claim 2, wherein: one end of the electromagnet is connected with the negative electrode of the modulation current source, and the other end of the electromagnet is connected with the positive electrode of the modulation current source through the lead.
4. The photonic crystal T-waveguide based right angle output magneto-optical modulator according to claim 1, wherein: the modulation current source is connected with the modulation signal.
5. The photonic crystal T-waveguide based right angle output magneto-optical modulator according to claim 1, wherein: the photonic crystal T-shaped waveguide is a structure in which a middle transverse row and a middle vertical row of dielectric columns are removed from the photonic crystal.
6. The photonic crystal T-waveguide based right angle output magneto-optical modulator according to claim 1, wherein: the second defect medium column is a ferrite square column, and the shape of the second defect medium column is square.
7. The photonic crystal T-waveguide based right angle output magneto-optical modulator according to claim 6, wherein: the magnetic permeability of the ferrite square column is anisotropic and is controlled by a bias magnetic field, and the direction of the bias magnetic field is along the axial direction of the ferrite square column.
8. The photonic crystal T-waveguide based right angle output magneto-optical modulator according to claim 1, wherein: and deleting one corner of the four background silicon medium columns at the crossed corners of the photonic crystal T-shaped waveguide to form isosceles right triangle defect medium columns.
9. The photonic crystal T-waveguide based right angle output magneto-optical modulator according to claim 1, wherein: the isosceles right triangle defect dielectric column is silicon.
10. The photonic crystal T-waveguide based right angle output magneto-optical modulator according to claim 1, wherein: the isosceles right triangle defect medium column is a triangular column type.
11. The photonic crystal T-waveguide based right angle output magneto-optical modulator according to claim 1, wherein: the background silicon medium column is square.
12. The photonic crystal T-waveguide based right angle output magneto-optical modulator according to claim 1, wherein: the background silicon medium column rotates anticlockwise by 41 degrees along the axis Z direction of the medium column.
13. The photonic crystal T-waveguide based right angle output magneto-optical modulator according to claim 1, wherein: the first and second signal output ends are arranged in a right angle.
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| PCT/CN2016/106653 WO2017140141A1 (en) | 2016-02-15 | 2016-11-21 | Right-angled output magneto-optical modulator for photonic crystal t-shaped waveguide |
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| CN105607303B (en) * | 2016-02-15 | 2021-02-19 | 深圳大学 | Right-angle output magneto-optical modulator based on photonic crystal T-shaped waveguide |
| CN105572921B (en) * | 2016-02-15 | 2021-02-19 | 深圳大学 | Magnetic control alternative right-angle output light path switch based on photonic crystal T-shaped waveguide |
| CN106154415B (en) * | 2016-08-31 | 2021-05-04 | 深圳大学 | Low-loss magneto-optical gap magnetic surface fast mode arbitrary direction controllable one-way turning waveguide |
| CN112113691B (en) * | 2019-06-21 | 2022-01-25 | 南京邮电大学 | Gallium arsenide photonic crystal pressure sensor considering temperature influence |
| CN113341500A (en) * | 2021-04-06 | 2021-09-03 | 江苏大学 | 3X 3 optical waveguide 8 channel splitter with adjustable output |
| CN114725640B (en) * | 2022-04-25 | 2022-10-21 | 华南理工大学 | Microwave topological non-blocking transmission line |
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