CN105568228A - Preparation method of radial metal nanowire-ceramic composite film - Google Patents

Preparation method of radial metal nanowire-ceramic composite film Download PDF

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CN105568228A
CN105568228A CN201610112856.7A CN201610112856A CN105568228A CN 105568228 A CN105568228 A CN 105568228A CN 201610112856 A CN201610112856 A CN 201610112856A CN 105568228 A CN105568228 A CN 105568228A
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composite film
ceramic composite
target
preparation
radial
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邹友生
惠帅
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Nanjing University of Science and Technology
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Nanjing University of Science and Technology
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0688—Cermets, e.g. mixtures of metal and one or more of carbides, nitrides, oxides or borides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment

Abstract

The invention discloses a preparation method of a radial metal nanowire-ceramic composite film. Firstly, a metal layer with a thickness of lower than 8 nm is deposited by using electron beam evaporation; then, the metal layer is quickly annealed to obtain a metal particle seed crystal layer; the seed crystal layer serves as a substrate; the magnetron sputtering is adopted to perform co-sputtering for a metal target and a compound ceramic target; and the pulsed bias etching is supplemented to prepare radial metal nanowires and the radial metal nanowire-ceramic composite film. The method has such advantages as large-area preparation and no pollution; and the diameters of the prepared radial metal nanowires are several nanometers, and are lower than the diameters of nanowires prepared by a traditional template method.

Description

A kind of preparation method of radial metal nanometer line-ceramic composite film
Technical field
The invention belongs to field of nanometer material technology, be specifically related to a kind of preparation method of radial metal nanometer line-ceramic composite film.
Background technology
The structural periodicity of metal nanometer line array and anisotropy make it have special surface plasma body resonant vibration character, unique performance is shown in the field such as optical, electrical, the Disciplinary Frontiers such as negative refraction, sub-wavelength imaging can be applied to, have broad application prospects.And radial metal nanometer line-ceramic composite, negative effective dielectric constant can not only be obtained, the dielectric constant gradient of material more can be made to change, change light propagation trajectories in the material, be conducive to realizing stealth material and Superlens.
Current, prepare radial metal nanometer line-ceramic composite and usually use template to be prepared.Publication number is that the Chinese patent literature of CN104099567A discloses a kind of method utilizing template galvanic deposit to prepare radial silver nanometer column cluster array, and the method utilizes nanohole alumine template, depositing nano post in silver electrolyte.But the radial metal nanometer line of template synthesis exists many restrictions, the array diameter such as prepared is comparatively large, and galvanic deposit needs base conductive, should not big area prepare, and these deficiencies constrain the further application of radial metal nanometer line.
Summary of the invention
The invention provides a kind of radial metal nanometer line-ceramic composite film and preparation method thereof.
The technical solution realizing the object of the invention is: a kind of preparation method of radial metal nanometer line-ceramic composite film, comprises the following steps:
Step 1, utilize electron beam evaporation method at deposited on substrates layer of metal layer; The material of described metal level is copper or aluminium, and metal layer thickness is 1-8nm; Substrate is silicon chip or quartz.
Step 2, in quick anneal oven, vacuum annealing process is carried out to metal level prepared by step 1, obtain metallic particles inculating crystal layer; The annealing temperature of vacuum annealing process is 300-500 DEG C, and described soaking time is 20-40min.
Step 3, employing magnetically controlled sputter method carry out cosputtering on the substrate depositing metallic particles inculating crystal layer, obtain described radial metal nanometer line-ceramic composite film.
Carrying out cosputtering target used is metallic target and ceramic target, and the material of described metallic target is identical with inculating crystal layer material, and the material of described ceramic target is aluminum oxide or aluminium nitride;
During cosputtering, described metallic target and ceramic target adopt radio-frequency power supply to drive, and metallic target sputtering power is 1-2W/cm 2, ceramic target sputtering power is 10-15W/cm 2.
Described sputtering atmosphere is argon gas, and described sputtering pressure scope is 0.1-0.5Pa.
Apply pulsed bias in sputter procedure to etch, described pulsed bias frequency is 200-350kHz, dutycycle 30% to 50%, and power density is 0.1-1W/cm 2, bias voltage magnitude range is-40V to-80V.
Described cosputtering depositing time is 20-60min.
Compared with prior art, its remarkable advantage is in the present invention: 1) the present invention adopts magnetron sputtering to replace the radial metal nanometer line-ceramic composite film of traditional template synthesis, avoids the restriction of template, is conducive to big area preparation; 2) the radial metal nano linear diameter in the radial metal nanometer line-ceramic composite film utilizing the inventive method to prepare is less, and does not do requirement in the electroconductibility of preparation process to substrate material, preparation method's environmental protection.
Accompanying drawing explanation
Fig. 1 is surface A FM pattern and the particle size statistical Butut of copper nano particles inculating crystal layer in the embodiment of the present invention 1, wherein (a) surface A FM shape appearance figure that is copper nano particles inculating crystal layer, (b) is copper nano particles size statistic distribution plan.
Fig. 2 is the cross section TEM pattern of radial copper nano-wire-alumina composite film in the embodiment of the present invention 1.
Fig. 3 is the cross section TEM pattern of radial aluminium nano wire-aluminium nitride laminated film in the embodiment of the present invention 2.
Fig. 4 is the cross section TEM pattern of radial aluminium nano wire-alumina composite film in the embodiment of the present invention 3.
Fig. 5 is the cross section TEM pattern of radial copper nano-wire-aluminium nitride laminated film in the embodiment of the present invention 4.
Embodiment
A preparation method for radial metal nanometer line-ceramic composite film, comprises the following steps:
Step 1, utilize electron beam evaporation method at deposited on substrates layer of metal layer; The material of described metal level is copper or aluminium, and metal layer thickness is 1-8nm; Substrate is silicon chip or quartz.
Step 2, in quick anneal oven, vacuum annealing process is carried out to metal level prepared by step 1, obtain metallic particles inculating crystal layer; The annealing temperature of described vacuum annealing process is 300-500 DEG C, and described soaking time is 20-40min.
Step 3, employing magnetically controlled sputter method carry out cosputtering on the substrate depositing metallic particles inculating crystal layer, obtain described radial metal nanometer line-ceramic composite film.
Carrying out cosputtering target used is metallic target and ceramic target, and the material of described metallic target is identical with inculating crystal layer material, and the material of described ceramic target is aluminum oxide or aluminium nitride;
During cosputtering, described metallic target and ceramic target adopt radio-frequency power supply to drive, and metallic target sputtering power is 1-2W/cm 2, ceramic target sputtering power is 10-15W/cm 2.
Described sputtering atmosphere is argon gas, and described sputtering pressure scope is 0.1-0.5Pa.
Apply pulsed bias in described sputter procedure to etch, described pulsed bias frequency is 200-350kHz, dutycycle 30% to 50%, and power density is 0.1-1W/cm 2, bias voltage magnitude range is-40V to-80V.
Described cosputtering depositing time is 20-60min.
Below in conjunction with embodiment, further detailed description is done to the present invention.
Embodiment 1
Utilize electron beam evaporation in silicon chip substrate, deposit the thick metallic copper of one deck 4nm; The silicon chip of deposited copper film is put into vacuum quick anneal oven anneal, annealing temperature is 500 DEG C, soaking time 40min, obtains copper nano particles inculating crystal layer after cooling.Inculating crystal layer substrate is loaded in magnetron sputtering equipment sediment chamber, vacuum tightness is evacuated to 10 -4below Pa; Pass into argon gas, sputtering pressure is 0.4Pa, and utilize radio-frequency sputtering to implement cosputtering, wherein the Sputtering power density of copper target and aluminum oxide target is respectively 2W/cm 2and 15W/cm 2; Unbalanced pulse bias voltage etches simultaneously, and frequency is 350kHz, and dutycycle is 50%, and substrate bias power density is 1W/cm 2, bias voltage size is-80V.After deposition 60min, close target driving power and pulsed bias power supply, obtain radial copper nano-wire-alumina composite film.
Respectively observation and analysis is carried out to above-mentioned seed crystal surface and film sample Cross Section Morphology by atomic force microscope (AFM) and transmission electron microscope (TEM).Fig. 1 gives surface A FM pattern and the particle size statistical distribution of copper nano particles inculating crystal layer in embodiment 1.Fig. 2 is the cross section TEM pattern of radial copper nano-wire-alumina composite film in embodiment 1.As can be seen from the figure, copper nano-wire is the radial growth to both sides centered by copper seed crystal particle, and its nanowire diameter is 3 ~ 4nm, is less than the nano wire that conventional template method prepares.
Embodiment 2
Utilize electron beam evaporation in silicon chip substrate, deposit the thick metallic aluminium of one deck 8nm; The silicon chip of deposition of aluminum film is put into vacuum quick anneal oven anneal, annealing temperature is 400 DEG C, soaking time 30min, obtains aluminum nanoparticles inculating crystal layer after cooling.Inculating crystal layer substrate is loaded in magnetron sputtering equipment sediment chamber, vacuum tightness is evacuated to 10 -4below Pa; Pass into argon gas, sputtering pressure is 0.3Pa, and utilize radio-frequency sputtering to implement cosputtering, wherein the Sputtering power density of aluminium target and aluminium nitride target is respectively 1.5W/cm 2and 12W/cm 2; Unbalanced pulse bias voltage etches simultaneously, and frequency is 300kHz, and dutycycle is 40%, and substrate bias power density is 0.5W/cm 2, bias voltage size is-60V.After deposition 40min, close target driving power and pulsed bias power supply, obtain radial aluminium nano wire-aluminium nitride laminated film.Fig. 3 is the cross section TEM pattern of radial aluminium nano wire-aluminium nitride laminated film in embodiment 2.As seen from the figure, aluminium nanowire diameter is 3 ~ 4nm, is less than the nano wire that conventional template method prepares.
Embodiment 3
Utilize electron beam evaporation at the thick metallic aluminium of quartz plate deposited on substrates one deck 1nm; The quartz plate of deposition of aluminum film is put into vacuum quick anneal oven anneal, annealing temperature is 300 DEG C, soaking time 20min, obtains aluminum nanoparticles inculating crystal layer after cooling.Inculating crystal layer substrate is loaded in magnetron sputtering equipment sediment chamber, vacuum tightness is evacuated to 10 -4below Pa; Pass into argon gas, sputtering pressure is 0.1Pa, and utilize radio-frequency sputtering to implement cosputtering, wherein the Sputtering power density of aluminium target and aluminum oxide target is respectively 1W/cm 2and 10W/cm 2; Unbalanced pulse bias voltage etches simultaneously, and frequency is 200kHz, and dutycycle is 30%, and substrate bias power density is 0.1W/cm 2, bias voltage size is-40V.After deposition 20min, close target driving power and pulsed bias power supply, obtain radial aluminium nano wire-alumina composite film.Fig. 4 is the cross section TEM pattern of radial aluminium nano wire-alumina composite film in embodiment 3.As seen from the figure, aluminium nanowire diameter is 2 ~ 3nm, is less than the nano wire that conventional template method prepares.
Embodiment 4
Utilize electron beam evaporation at the thick metallic copper of quartz plate deposited on substrates one deck 7nm; The quartz plate of deposited copper film is put into vacuum quick anneal oven anneal, annealing temperature is 400 DEG C, soaking time 40min, obtains copper nano particles inculating crystal layer after cooling.Inculating crystal layer substrate is loaded in magnetron sputtering equipment sediment chamber, vacuum tightness is evacuated to 10 -4below Pa; Pass into argon gas, sputtering pressure is 0.5Pa, and utilize radio-frequency sputtering to implement cosputtering, wherein the Sputtering power density of copper target and aluminium nitride target is respectively 1.5W/cm 2and 13W/cm 2; Unbalanced pulse bias voltage etches simultaneously, and frequency is 250kHz, and dutycycle is 40%, and substrate bias power density is 0.3W/cm 2, bias voltage size is-50V.After deposition 50min, close target driving power and pulsed bias power supply, obtain radial copper nano-wire-aluminium nitride laminated film.Fig. 5 is the cross section TEM pattern of radial copper nano-wire-aluminium nitride laminated film in embodiment 4.As seen from the figure, copper nano-wire diameter is 4 ~ 5nm, is less than the nano wire that conventional template method prepares.

Claims (8)

1. a preparation method for radial metal nanometer line-ceramic composite film, is characterized in that, comprise the following steps:
Step 1, utilize electron beam evaporation method at deposited on substrates layer of metal layer;
Step 2, in quick anneal oven, vacuum annealing process is carried out to metal level prepared by step 1, obtain metallic particles inculating crystal layer;
Step 3, employing magnetically controlled sputter method carry out cosputtering on the substrate depositing metallic particles inculating crystal layer, obtain described radial metal nanometer line-ceramic composite film.
2. the preparation method of radial metal nanometer line-ceramic composite film according to claim 1, is characterized in that, the material of metal level described in step 1 is copper or aluminium, and metal layer thickness is 1-8nm; Substrate is silicon chip or quartz.
3. the preparation method of radial metal nanometer line-ceramic composite film according to claim 1, is characterized in that, the annealing temperature of vacuum annealing process in step 2 is 300-500 DEG C, and described soaking time is 20-40min.
4. the preparation method of radial metal nanometer line-ceramic composite film according to claim 1, it is characterized in that, carrying out cosputtering target used in step 3 is metallic target and ceramic target, the material of described metallic target is identical with inculating crystal layer material, and the material of described ceramic target is aluminum oxide or aluminium nitride;
During cosputtering, described metallic target and ceramic target adopt radio-frequency power supply to drive, and metallic target sputtering power is 1-2W/cm 2, ceramic target sputtering power is 10-15W/cm 2.
5. the preparation method of radial metal nanometer line-ceramic composite film according to claim 4, is characterized in that, described sputtering atmosphere is argon gas, and described sputtering pressure scope is 0.1-0.5Pa.
6. the preparation method of radial metal nanometer line-ceramic composite film according to claim 4, it is characterized in that, apply pulsed bias and etch in sputter procedure, described pulsed bias frequency is 200-350kHz, dutycycle 30% to 50%, power density is 0.1-1W/cm 2, bias voltage magnitude range is-40V to-80V.
7. the preparation method of radial metal nanometer line-ceramic composite film according to claim 4, is characterized in that, cosputtering depositing time is 20-60min.
8. radial metal nanometer line-ceramic composite film, is characterized in that, it adopts method according to claim 1 to prepare.
CN201610112856.7A 2016-02-29 2016-02-29 Preparation method of radial metal nanowire-ceramic composite film Pending CN105568228A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109581564A (en) * 2018-11-14 2019-04-05 中国科学院宁波材料技术与工程研究所 A kind of multi-layer cermet film and preparation method thereof with structure color
CN112063980A (en) * 2020-07-23 2020-12-11 四川大学 Preparation method and application of room-temperature ferromagnetic silicon-germanium-manganese semiconductor film
CN113684457A (en) * 2021-07-06 2021-11-23 华南理工大学 Gold-based mosaic structure alpha-alumina film and preparation method and application thereof
CN116352233A (en) * 2023-05-30 2023-06-30 中镱新材料智能制造研究院(山西)有限公司 Manufacturing method for fused accumulation additive of ejection type ceramic particle reinforced composite material

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CN101172573A (en) * 2006-11-01 2008-05-07 国家纳米技术与工程研究院 Silver nano-grain array mould plate and preparation method thereof
US20090045720A1 (en) * 2005-11-10 2009-02-19 Eun Kyung Lee Method for producing nanowires using porous glass template, and multi-probe, field emission tip and devices employing the nanowires
CN105002469A (en) * 2015-07-10 2015-10-28 中国科学院宁波材料技术与工程研究所 Ceramic-metal nanowire composite film and preparation method thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090045720A1 (en) * 2005-11-10 2009-02-19 Eun Kyung Lee Method for producing nanowires using porous glass template, and multi-probe, field emission tip and devices employing the nanowires
CN101172573A (en) * 2006-11-01 2008-05-07 国家纳米技术与工程研究院 Silver nano-grain array mould plate and preparation method thereof
CN105002469A (en) * 2015-07-10 2015-10-28 中国科学院宁波材料技术与工程研究所 Ceramic-metal nanowire composite film and preparation method thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109581564A (en) * 2018-11-14 2019-04-05 中国科学院宁波材料技术与工程研究所 A kind of multi-layer cermet film and preparation method thereof with structure color
CN109581564B (en) * 2018-11-14 2021-04-06 中国科学院宁波材料技术与工程研究所 Multilayer metal ceramic film with structural color and preparation method thereof
CN112063980A (en) * 2020-07-23 2020-12-11 四川大学 Preparation method and application of room-temperature ferromagnetic silicon-germanium-manganese semiconductor film
CN113684457A (en) * 2021-07-06 2021-11-23 华南理工大学 Gold-based mosaic structure alpha-alumina film and preparation method and application thereof
CN116352233A (en) * 2023-05-30 2023-06-30 中镱新材料智能制造研究院(山西)有限公司 Manufacturing method for fused accumulation additive of ejection type ceramic particle reinforced composite material
CN116352233B (en) * 2023-05-30 2023-08-22 中镱新材料智能制造研究院(山西)有限公司 Manufacturing method for fused accumulation additive of ejection type ceramic particle reinforced composite material

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