CN105552103A - Printed light emitting display and manufacturing method thereof - Google Patents
Printed light emitting display and manufacturing method thereof Download PDFInfo
- Publication number
- CN105552103A CN105552103A CN201511003469.1A CN201511003469A CN105552103A CN 105552103 A CN105552103 A CN 105552103A CN 201511003469 A CN201511003469 A CN 201511003469A CN 105552103 A CN105552103 A CN 105552103A
- Authority
- CN
- China
- Prior art keywords
- layer
- pixel
- hole
- sub
- tft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000002161 passivation Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 23
- 238000002360 preparation method Methods 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 15
- 238000011161 development Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 5
- 238000003384 imaging method Methods 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 239000002096 quantum dot Substances 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 230000002209 hydrophobic effect Effects 0.000 abstract description 9
- 238000000151 deposition Methods 0.000 description 9
- 238000011109 contamination Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000007639 printing Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 3
- 238000010129 solution processing Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 241000209202 Bromus secalinus Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention is applicable to the technical field of display and provides a printed light emitting display and a manufacturing method thereof. The printed light emitting display comprises a TFT array substrate; the TFT array substrate comprises a substrate body, a TFT array, a passivation layer and a flat layer which are arranged in sequence from bottom to top; the TFT array comprises a plurality of TFTs, wherein each TFT comprises a source/drain electrode and a grid electrode; the flat layer is a hydrophobic flat layer which is provided with a sub-pixel pit of which the depth is less than the thickness of the hydrophobic flat layer, a through hole communicated with the source/drain electrode is formed under the area of the sub-pixel pit; a pixel electrode and a luminous layer are arranged in the sub-pixel pit in sequence, a top electrode is arranged on the luminous layer, wherein the pixel electrode is connected with the source/drain electrode through the through hole.
Description
Technical field
The invention belongs to Display Technique field, particularly relate to a kind of printed form active display and preparation method thereof.
Background technology
In the present age of information-intensive society, as the importance of the display device of visual information transmission medium in further reinforcement, in order at following dominate, display device just towards gentlier, the trend development of thinner, more low energy consumption, more low cost and better picture quality.
Due to organic electroluminescent LED (OLED) due to its there is self-luminous, reaction is fast, visual angle is wide, brightness is high, the advantage such as frivolous; And light emitting diode with quantum dots (QLED) has advantages such as photochromic purity is high, luminous quantum efficiency is high, glow color is easily adjusted, long service life, OLED and QLED becomes two Main way of current display device research.At present, the preparation technology of OLED mainly contains vacuum evaporation and solution processing, preparation technology's mainly solution processing of QLED.Wherein, the vacuum evaporation of OLED is comparatively ripe in the application aspect of small size device, be in volume production at present, but production cost still remains high.The solution processing of OLED and QLED mainly contains inkjet printing, nozzle application, spin coating, silk screen printing etc., typography wherein, especially inkjet technology is because stock utilization is high, it is in large size to realize and be easy to realize colorize, is considered to the important way that large scale OLED and QLED display device realize low cost volume production.
Drive TFT array is an important component part of OLED and QLED display.At present, the preparation process of display device is generally: after tft array completes, dig a hole by first time photoetching process in the source/drain upper end of TFT and expose source/drain, then one deck ITO is deposited, ITO patterning is formed by second time photoetching process the pixel electrode be connected with TFT source/drain subsequently, prepare luminescent device on the pixel electrode.The method manufacturing process is comparatively complicated, in addition, in order to prevent position and the size of the short circuit of ITO pixel electrode neighboring area, simultaneously convenient definition pixel, around ITO pixel electrode, often needs to prepare one deck pixel bank.When adopting typography to make this pixel bank, pixel bank forms deposit of ink region, overflows to prevent ink, cause the mutual colour contamination of neighbor, also need to carry out hydrophobic treatment to pixel bank, further complicated manufacture craft, increases cost of manufacture.The making of pixel bank simultaneously adds additional the preparation technology of device, also increases the thickness of device simultaneously, is unfavorable for the low-cost production of display and frivolous characteristic.
Summary of the invention
The object of the present invention is to provide a kind of printed form active display, be intended to solve existing active display need to set up pixel bank and cause light-emitting display device frivolous not and the problem that cost is relatively high and preparation method is complicated, and when printing makes pixel bank, easily cause the problem of the mutual colour contamination of neighbor.
Another object of the present invention is to the preparation method that kind of a kind of printed form active display is provided.
A kind of printed form active display, comprise tft array substrate, described tft array substrate comprises the substrate, tft array, passivation layer and the flatness layer that set gradually from the bottom up, described tft array comprises multiple TFT, described TFT comprises source/drain and grid, described flatness layer is hydrophobicity flatness layer, described hydrophobicity flatness layer offers sub-pixel hole, and the degree of depth in described sub-pixel hole is less than the thickness of described hydrophobicity flatness layer;
Described sub-pixel hole offers the through hole communicated with described source/drain below region;
Be disposed with pixel electrode and luminescent layer in described sub-pixel hole, described luminescent layer is provided with top electrode, and wherein, described pixel electrode is connected with described source/drain by described through hole.
And a kind of preparation method of printed form active display, comprises the following steps:
Tft array substrate is provided, described tft array substrate comprises substrate, tft array and the passivation layer be deposited on described tft array and hydrophobicity flatness layer that set gradually from the bottom up, wherein, described tft array comprises multiple TFT, and described TFT comprises source/drain and grid;
Described hydrophobicity flatness layer deposits photoresistance;
Adopt mask plate to carry out exposure-processed to described photoresistance, described exposure-processed comprises carries out half exposure to the region for making sub-pixel hole, entirely exposes for making the via regions being communicated with described source/drain and described sub-pixel hole above described source/drain;
Development treatment is carried out to the exposure area of described photoresistance, the photoresistance of described full exposure area is removed completely, described half exposure area forms residual light resistance layer;
Dry etching is carried out to the region of described development treatment, makes described hydrophobicity flatness layer form sub-pixel hole, described hydrophobicity flatness layer and described passivation layer at half exposure area opening and form through hole at full exposure area opening;
In described sub-pixel hole after pixel deposition electrode, remove the described photoresistance without exposure imaging process;
Described pixel electrode makes luminescent device.
Printed form active display provided by the invention, sub-pixel hole is offered using hydrophobicity flatness layer as pixel bank layer, on described hydrophobicity flatness layer, the active display obtained thus does not need additionally to arrange pixel bank, make described light-emitting display device more frivolous and cost reduction, there are better market prospects.Meanwhile, hydrophobic flatness layer can effectively be avoided in printing process, ink is spilled over to the color colour contamination caused in adjacent sub-pixel hole, thus effectively improves the yield of typography.
The preparation method of printed form active display provided by the invention, flatness layer is made by adopting hydrophobic material, and exposure-processed is carried out to described photoresistance, wherein, via regions above described TFT source/drain is entirely exposed, carries out half exposure to described pixel electrode area, and then by development, etching processing, on described hydrophobicity flatness layer, etching forms described sub-pixel hole and above described source/drain, etches borehole and forms through hole, obtains the active display using described hydrophobicity flatness layer as pixel bank layer.The preparation method of active display provided by the invention enormously simplify the manufacture craft of active display, and has saved cost of manufacture.Meanwhile, the setting of described hydrophobicity flatness layer, can effectively avoid in printing process, ink is spilled over to the color colour contamination caused in adjacent sub-pixel hole, thus effectively improves the yield of typography.In addition, after the present invention has deposited pixel electrode, peeled off by photoresistance and realize patterned electrodes, the manufacture craft of active display can be further simplify, enhance productivity.
Accompanying drawing explanation
Fig. 1 is the structural representation of the printed form active display that the embodiment of the present invention provides;
Fig. 2 is in the preparation method of the printed form active display that the embodiment of the present invention provides, the structural representation after hydrophobicity flatness layer deposits photoresistance;
Fig. 3 is in the preparation method of the printed form active display that the embodiment of the present invention provides, and carries out the structural representation after exposure-processed to photoresistance;
Fig. 4 is in the preparation method of the printed form active display that the embodiment of the present invention provides, and carries out the structural representation after development treatment to the exposure area of photoresistance;
Fig. 5 is in the preparation method of the printed form active display that the embodiment of the present invention provides, the structural representation in sub-pixel hole after pixel deposition electrode;
Fig. 6 is in the preparation method of the printed form active display that the embodiment of the present invention provides, and removes the structural representation after without the photoresistance of exposure imaging process.
Embodiment
In order to make the technical problem to be solved in the present invention, technical scheme and beneficial effect clearly understand, below in conjunction with embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
By reference to the accompanying drawings 1, embodiments provide a kind of printed form active display, comprise tft array substrate 1, described tft array substrate 1 comprises the substrate 11, tft array, passivation layer 13 and the flatness layer 14 that set gradually from the bottom up, described tft array comprises multiple TFT12, described TFT12 comprises source/drain 121 and grid (not marking in figure), described flatness layer 14 is hydrophobicity flatness layer 14, described hydrophobicity flatness layer 14 offers sub-pixel hole 2, and the degree of depth in described sub-pixel hole 2 is less than the thickness of described hydrophobicity flatness layer 14; Described sub-pixel cheats the through hole 3 offering below 2 regions and communicate with described source/drain 121; Be disposed with pixel electrode 41 and luminescent layer 42 in described sub-pixel hole 2, described luminescent layer 42 is provided with top electrode 43, and wherein, described pixel electrode 41 is connected with described source/drain 121 by described through hole 2.
Concrete, in the embodiment of the present invention, the structure of described tft array substrate 1 is the structure of the conventional tft array substrate in this area, both the substrate 11, tft array, passivation layer 13 and the flatness layer 14 that set gradually from the bottom up had been comprised, described tft array comprises multiple TFT12, and described TFT12 comprises source/drain 121 and grid (not marking in figure).Wherein, described substrate 11 can be hard substrate or flexible base, board, and wherein, described hard substrate can be glass.As specific embodiment, described TFT12 is the one in non-crystalline silicon tft, multi-crystal TFT or metal oxide TFT; Wherein, described multi-crystal TFT comprises low temperature polycrystalline silicon TFT and high temperature polysilicon TFT.With conventional tft array substrate unlike, described in the embodiment of the present invention, flatness layer 14 is hydrophobicity flatness layer 14.Adopt hydrophobicity flatness layer 14 prepared by hydrophobic material, in the sub-pixel hole 2 of follow-up formation during deposited ink, printing process ink inside can be avoided to be spilled over to the color colour contamination caused in adjacent sub-pixel hole, thus effectively improve the yield of typography.Owing to described hydrophobicity flatness layer 14 needing form described sub-pixel hole 2, therefore, the thickness of described hydrophobicity flatness layer 14 arranges thicker than the flatness layer thickness usually not as pixel bank layer.As preferred embodiment, the thickness of described hydrophobicity flatness layer 14 is 2-5 μm, provide enough spaces to the making in described sub-pixel hole 2.
In the embodiment of the present invention, described sub-pixel hole 2 is formed in described hydrophobicity flatness layer 14, and the degree of depth in described sub-pixel hole 2 is less than the thickness of described hydrophobicity flatness layer 14.Concrete, the degree of depth in described sub-pixel hole 2 is determined with the thickness of the luminescent layer 42 made.As preferred embodiment, the degree of depth in described sub-pixel hole 2 is 1-3 μm.
In the embodiment of the present invention, in described sub-pixel hole 2, deposit pixel electrode 41, described pixel electrode 41 is filled described through hole 3 and is communicated with described source/drain 121.Described pixel electrode 41 is transparency electrode or metal electrode, and wherein, described transparency electrode comprises conducting metal oxide.
Described luminescent layer 42 comprises organic luminous layer or quantum dot light emitting layer, and namely described luminescent layer 42 is made up of at least one in luminous organic material or phosphor, correspondingly thus obtains OLED or QLED.In order to improve charge migration efficiency, described luminescent layer 42 also comprises at least one deck in electron injecting layer, electron transfer layer, hole transmission layer and hole injection layer.As preferred embodiment, described luminescent layer 42 comprises electron injecting layer, electron transfer layer, hole transmission layer and hole injection layer.
Described luminescent layer 42 is provided with top electrode 43, and described top electrode 43 can only be arranged on described luminescent layer 42; Also in the mode of flood deposition, described luminescent layer 42 can be arranged on and not offer on the described hydrophobicity flatness layer 14 in described sub-pixel hole 2.
In the embodiment of the present invention, described pixel electrode 41, described luminescent layer 42 and described top electrode 43 form luminescence unit 4 jointly.
The printed form active display that the embodiment of the present invention provides, sub-pixel hole is offered using hydrophobicity flatness layer as pixel bank layer, on described hydrophobicity flatness layer, the active display obtained thus does not need additionally to arrange pixel bank, make described light-emitting display device more frivolous and cost reduction, there are better market prospects.Meanwhile, hydrophobic flatness layer can effectively be avoided in printing process, ink is spilled over to the color colour contamination caused in adjacent sub-pixel hole, thus effectively improves the yield of typography.
Printed form active display described in the embodiment of the present invention, can be prepared by following method, certainly, also can be prepared by additive method.
Correspondingly, composition graphs 1-6, the embodiment of the present invention additionally provides a kind of preparation method of printed form active display, comprises the following steps:
S01., tft array substrate 1 is provided, described tft array substrate 1 comprises substrate 11, tft array and the passivation layer 13 be deposited on described tft array and hydrophobicity flatness layer 14 that set gradually from the bottom up, wherein, described tft array comprises multiple TFT12, and described TFT12 comprises source/drain 121 and grid;
S02. on described hydrophobicity flatness layer 14, photoresistance 5 is deposited;
S03. adopt mask plate to carry out exposure-processed to described photoresistance 5, described exposure-processed comprises carries out half exposure to the region for making sub-pixel hole 2, entirely exposes for making through hole 3 region being communicated with described source/drain 121 and described sub-pixel hole 2 above described source/drain 121;
S04. development treatment is carried out to the exposure area of described photoresistance 5, the photoresistance of described full exposure area is removed completely, described half exposure area forms residual light resistance layer 51;
S05. dry etching is carried out to the region of described development treatment, make described hydrophobicity flatness layer 14 form sub-pixel hole 2, described hydrophobicity flatness layer 14 and described passivation layer 13 at half exposure area opening and form through hole 3 at full exposure area opening;
S06. in described sub-pixel hole 2, after pixel deposition electrode 41, the described photoresistance 5 without exposure imaging process is removed;
S07. on described pixel electrode 41, luminescent device is made.
Concrete, in above-mentioned steps S01, the TFT substrate structure that described TFT substrate 1 uses containing this area routine, concrete, comprise the substrate 11, tft array, passivation layer 13 and the flatness layer 14 that set gradually from the bottom up, described tft array comprises multiple TFT12, and described TFT12 comprises source/drain 121 and grid.With conventional TFT substrate structure unlike, described in the embodiment of the present invention, flatness layer 14 is hydrophobicity flatness layer 14.
In above-mentioned steps S02, the method that described TFT substrate 1 deposits photoresistance 5 is unrestricted, and this area conventional deposition method can be adopted to realize.
As shown in Figure 2, in above-mentioned steps S03, mask plate (not marking in figure) is adopted to carry out exposure-processed to described photoresistance 5, described mask plate comprises full exposed portion (complete openwork part) and half exposed portion, and described half exposed portion can realize by arranging tiny aperture at described mask plate respective regions.In the embodiment of the present invention, described exposure-processed comprises carries out half exposure to the region for making sub-pixel hole 2, entirely exposes for making through hole 3 region being communicated with described source/drain 121 and described sub-pixel hole 2 above described source/drain 121.
In above-mentioned steps S04, as shown in Figure 3, through described development treatment, the photoresistance 5 of described full exposure area is removed completely, and described half exposure area forms the very thin residual light resistance layer 51 of one deck, and photoresistance 5 thickness of unexposed processing region does not change.
In above-mentioned steps S05, as shown in Figure 4, in the embodiment of the present invention, dry etching is carried out to the region of described development treatment conventional dry etching technology can be adopted to realize.Through described dry etching; described residual light resistance layer 51 is removed in etching process; the described hydrophobicity flatness layer 14 in this region is partially etched formation groove because losing photoresistance 5 and protecting, and namely described hydrophobicity flatness layer 14 forms sub-pixel hole 2 at half exposure area opening.The material of cheating 2 peripheries due to described sub-pixel is hydrophobic material, therefore, in the process of the described luminescent layer 4 of printing, ink effectively can be avoided to be spilled over to the color colour contamination caused in adjacent sub-pixel hole 2, thus effectively improve the yield of typography.Meanwhile, described hydrophobicity flatness layer 14 and described passivation layer 13 be etched in full exposure area opening formed through hole 3, expose described source/drain 121.
In above-mentioned steps S06, as shown in Figure 5, in described sub-pixel hole 2, the method for pixel deposition electrode 41 is unrestricted, and the conventional method of this area can be adopted to realize.As a specific embodiment, when depositing described pixel electrode 41, adopt the mode of flood deposition, now, described sub-pixel hole 2 and described photoresistance 5 can deposit pixel electrode material simultaneously.After having deposited described pixel electrode 41, peel off the described photoresistance 5 that described flatness layer 14 retains; Meanwhile, the pixel electrode material be deposited on described photoresistance 5 is also stripped, and forms patterned pixel electrode thus, as shown in Figure 6.
In above-mentioned steps S07, as shown in Figure 1, the method described pixel electrode 41 making luminescent device is unrestricted.Concrete, described luminescent device comprises the luminescent layer 42 and top electrode 43 that set gradually, and wherein, described luminescent layer 42 comprises luminous material layer, preferably, also comprises at least one deck in electron injecting layer, electron transfer layer, hole transmission layer and hole injection layer.As preferred embodiment, described luminescent layer 42 comprises electron injecting layer, electron transfer layer, luminous material layer, hole transmission layer and hole injection layer.Described top electrode 43 can only be arranged on described luminescent layer 42; Also in the mode of flood deposition, described luminescent layer 42 can be arranged on and not offer on the described flatness layer 14 in described sub-pixel hole 2.In the embodiment of the present invention, described pixel electrode 41, described luminescent layer 42 and described top electrode 43 form luminescence unit 4 jointly.Thus, hydrophobicity flatness layer 14 described in the embodiment of the present invention is as pixel bank layer.
Further, the embodiment of the present invention also comprises carries out encapsulating process to described active display, and the method for described encapsulating process can adopt this area conventional method to realize.
The preparation method of the printed form active display that the embodiment of the present invention provides, flatness layer is made by adopting hydrophobic material, and exposure-processed is carried out to described photoresistance, wherein, via regions above described TFT source/drain is entirely exposed, carries out half exposure to described pixel electrode area, and then by development, etching processing, on described hydrophobicity flatness layer, etching forms described sub-pixel hole and above described source/drain, etches borehole and forms through hole, obtains the active display using described hydrophobicity flatness layer as pixel bank layer.The preparation method of the active display that the embodiment of the present invention provides enormously simplify the manufacture craft of active display, and has saved cost of manufacture.Meanwhile, the setting of described hydrophobicity flatness layer, can effectively avoid in printing process, ink is spilled over to the color colour contamination caused in adjacent sub-pixel hole, thus effectively improves the yield of typography.In addition, after the embodiment of the present invention has deposited pixel electrode, peeled off by photoresistance and realize patterned electrodes, the manufacture craft of active display can be further simplify, enhance productivity.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. a printed form active display, comprise tft array substrate, described tft array substrate comprises the substrate, tft array, passivation layer and the flatness layer that set gradually from the bottom up, described tft array comprises multiple TFT, described TFT comprises source/drain and grid, it is characterized in that, described flatness layer is hydrophobicity flatness layer, described hydrophobicity flatness layer offers sub-pixel hole, and the degree of depth in described sub-pixel hole is less than the thickness of described hydrophobicity flatness layer;
Described sub-pixel hole offers the through hole communicated with described source/drain below region;
Be disposed with pixel electrode and luminescent layer in described sub-pixel hole, described luminescent layer is provided with top electrode, and wherein, described pixel electrode is connected with described source/drain by described through hole.
2. printed form active display as claimed in claim 1, is characterized in that, the degree of depth in described sub-pixel hole is 1-3 μm.
3. printed form active display as claimed in claim 1, it is characterized in that, the thickness of described hydrophobicity flatness layer is 2-5 μm.
4. the printed form active display as described in as arbitrary in claim 1-3, it is characterized in that, described luminescent layer comprises organic luminous layer or quantum dot light emitting layer.
5. printed form active display as claimed in claim 4, it is characterized in that, described luminescent layer also comprises at least one deck in electron injecting layer, electron transfer layer, hole transmission layer and hole injection layer.
6. the printed form active display as described in as arbitrary in claim 1-3, it is characterized in that, described TFT is the one in non-crystalline silicon tft, multi-crystal TFT or metal oxide TFT.
7. the printed form active display as described in as arbitrary in claim 1-3, it is characterized in that, described pixel electrode is transparency electrode or metal electrode, and wherein, described transparency electrode comprises conducting metal oxide.
8. a preparation method for printed form active display, comprises the following steps:
Tft array substrate is provided, described tft array substrate comprises substrate, tft array and the passivation layer be deposited on described tft array and hydrophobicity flatness layer that set gradually from the bottom up, wherein, described tft array comprises multiple TFT, and described TFT comprises source/drain and grid;
Described hydrophobicity flatness layer deposits photoresistance;
Adopt mask plate to carry out exposure-processed to described photoresistance, described exposure-processed comprises carries out half exposure to the region for making sub-pixel hole, entirely exposes for making the via regions being communicated with described source/drain and described sub-pixel hole above described source/drain;
Development treatment is carried out to the exposure area of described photoresistance, the photoresistance of described full exposure area is removed completely, described half exposure area forms residual light resistance layer;
Dry etching is carried out to the region of described development treatment, makes described hydrophobicity flatness layer form sub-pixel hole, described hydrophobicity flatness layer and described passivation layer at half exposure area opening and form through hole at full exposure area opening;
In described sub-pixel hole after pixel deposition electrode, remove the described photoresistance without exposure imaging process;
Described pixel electrode makes luminescent device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511003469.1A CN105552103A (en) | 2015-12-25 | 2015-12-25 | Printed light emitting display and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511003469.1A CN105552103A (en) | 2015-12-25 | 2015-12-25 | Printed light emitting display and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105552103A true CN105552103A (en) | 2016-05-04 |
Family
ID=55831186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201511003469.1A Pending CN105552103A (en) | 2015-12-25 | 2015-12-25 | Printed light emitting display and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105552103A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107068717A (en) * | 2017-04-06 | 2017-08-18 | 惠科股份有限公司 | Display panel and method for manufacturing the same |
| CN108565358A (en) * | 2018-01-19 | 2018-09-21 | 昆山国显光电有限公司 | A kind of method and display screen of anode etching |
| CN110828525A (en) * | 2019-11-20 | 2020-02-21 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof, display panel and display device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1689377A (en) * | 2002-10-07 | 2005-10-26 | 皇家飞利浦电子股份有限公司 | Method for manufacturing a light emitting display |
| CN101800240A (en) * | 2009-02-06 | 2010-08-11 | 精工爱普生株式会社 | Organnic electroluminescent device, electronic equipment |
| CN103151305A (en) * | 2013-02-28 | 2013-06-12 | 京东方科技集团股份有限公司 | Thin film transistor array substrate, preparing method and display device |
| US20150028292A1 (en) * | 2013-07-25 | 2015-01-29 | Samsung Display Co., Ltd. | Organic light-emitting display device and manufacturing method thereof |
-
2015
- 2015-12-25 CN CN201511003469.1A patent/CN105552103A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1689377A (en) * | 2002-10-07 | 2005-10-26 | 皇家飞利浦电子股份有限公司 | Method for manufacturing a light emitting display |
| CN101800240A (en) * | 2009-02-06 | 2010-08-11 | 精工爱普生株式会社 | Organnic electroluminescent device, electronic equipment |
| CN103151305A (en) * | 2013-02-28 | 2013-06-12 | 京东方科技集团股份有限公司 | Thin film transistor array substrate, preparing method and display device |
| US20150028292A1 (en) * | 2013-07-25 | 2015-01-29 | Samsung Display Co., Ltd. | Organic light-emitting display device and manufacturing method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107068717A (en) * | 2017-04-06 | 2017-08-18 | 惠科股份有限公司 | Display panel and method for manufacturing the same |
| CN108565358A (en) * | 2018-01-19 | 2018-09-21 | 昆山国显光电有限公司 | A kind of method and display screen of anode etching |
| CN108565358B (en) * | 2018-01-19 | 2020-05-19 | 昆山国显光电有限公司 | Anode etching method and display screen |
| CN110828525A (en) * | 2019-11-20 | 2020-02-21 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof, display panel and display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107393939B (en) | Pixel defining layer and manufacturing method thereof, display panel and manufacturing method thereof, and display device | |
| US9373814B2 (en) | Organic light-emitting diode (OLED) display panel, pixel define layer (PDL) and preparation method thereof | |
| US9722005B2 (en) | Light-emitting device, array substrate, display device and manufacturing method of light-emitting device | |
| WO2020207124A1 (en) | Display substrate and manufacturing method therefor, and display device | |
| CN105655346B (en) | Thin-film transistor array base-plate | |
| WO2019196587A1 (en) | Organic electroluminescent display panel, manufacturing method thereof, and display device | |
| CN105118846B (en) | Printed light emitting diode display device and manufacturing method thereof | |
| CN108493228A (en) | Array substrate and its manufacturing method, display panel | |
| CN111628113B (en) | Method for producing electroluminescent device | |
| CN107579102A (en) | Display panel and display device | |
| CN105489611A (en) | Printed type light emitting display and manufacturing method therefor | |
| CN105448957A (en) | Organic electroluminescence display substrate and manufacturing method thereof and display device | |
| US20220376007A1 (en) | Display substrate, method for forming the same and display device | |
| CN108538892A (en) | The production method of OLED display device | |
| CN109860438B (en) | Display substrate, preparation method thereof and display device | |
| US9679953B2 (en) | WOLED back panel and method of manufacturing the same | |
| CN104538351A (en) | Organic light emitting diode array substrate, manufacturing method thereof and display device | |
| CN111162095B (en) | Driving backboard, manufacturing method thereof, display panel and display device | |
| US20210083219A1 (en) | Display substrate and preparation method thereof, display apparatus | |
| CN110444567A (en) | A kind of array substrate and preparation method thereof | |
| CN107919379A (en) | OLED display and preparation method thereof | |
| CN105374852B (en) | A kind of printed form active display and preparation method thereof of no pixel bank | |
| CN108962936A (en) | Pixel defines structure and preparation method thereof, display panel | |
| US20210408176A1 (en) | Organic light-emitting display panel, manufacturing method thereof, and organic light-emitting display device | |
| CN105552103A (en) | Printed light emitting display and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160504 |
|
| RJ01 | Rejection of invention patent application after publication |